KR102613808B1 - Package module, method for manufacturing the same, and method for operating the same - Google Patents

Abstract

The present invention includes a substrate, a pixel portion formed on one side of the substrate, a light-emitting device bonded to one side of the substrate, and a cover portion surrounding the pixel portion and the light-emitting device so that the optical signal generated by the light-emitting device can be reflected to the pixel portion. As a package module and its manufacturing method and operating method, a package module with an improved structure to reduce the height and its manufacturing method and operating method are presented.

Description

Package module, its manufacturing method and its operating method {PACKAGE MODULE, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR OPERATING THE SAME}

The present invention relates to a package module, a method of manufacturing the same, and a method of operating the same, and relates to a package module whose structure has been improved to reduce its size, a method of manufacturing the same, and a method of operating the same.

A photosensor chip is a semiconductor device that has the function of taking images of an object, is manufactured in the shape of a package module, and is mounted on various mobile devices, including digital cameras and smart phones. As sensor technology has significantly improved, these photosensor chips can generate image data with little noise when read electronically. Therefore, the use of photo sensor chips is expanding to the security field.

In other words, photosensor chips are also used to generate quantum random numbers used for encryption of communication content and generation of encryption keys. In addition, photo sensor chips are used in a variety of technical fields that require receiving optical signals.

Meanwhile, the photosensor chip must receive an optical signal for quantum random number generation in order to generate quantum random numbers. Accordingly, in order for a mobile device to generate quantum random numbers, it must include not only a photosensor chip but also additional hardware such as a light source and optical devices. At this time, a lot of space is required to mount the photosensor chip, light source, and optical device on the mobile device, and complex circuitry is required.

The technology behind the present invention is published in the following patent documents.

KR 10-2014-0045235 A KR 10-2018-0034242 A

The present invention provides a package module that can be reduced in size, a manufacturing method thereof, and a method of operating the same.

A package module according to an embodiment of the present invention includes a base material; a pixel portion formed on one side of the substrate; A light emitting device bonded to one surface of the substrate; and a cover unit surrounding the pixel unit and the light-emitting device to reflect the optical signal generated by the light-emitting device to the pixel unit.

The substrate may include a wafer, and the pixel portion and the light emitting device may be disposed adjacent to the same surface of the wafer.

The cover part includes a light-transmitting member formed on one side of the substrate and accommodating the pixel part and the light-emitting element therein; and a light blocking member surrounding the light transmitting member, wherein the light signal may be reflected at a boundary between the light transmitting member and the light blocking member and be incident on the pixel portion.

The cover part may include a dam member that extends along the circumference of the light-transmitting member on one surface of the substrate and is accommodated inside the light-blocking member.

The light transmitting member may include a transparent epoxy resin having a light transmittance ranging from 90% to 100%.

The light blocking member may include an epoxy resin containing black pigment to block external visible rays and near-infrared rays.

The thickness of the light blocking member may range from 20㎛ to 100㎛.

The cover portion includes a cap member that is formed to be convex upward from one surface of the substrate and accommodates the pixel portion and the light emitting device therein; and a coating layer formed on the inner surface of the cap member to reflect optical signals, and an air layer may be formed between the pixel portion, the light emitting device, and the coating layer.

The cover part may further include a molding member surrounding the cap member.

The cap member may include a metal material, and the coating layer may include at least one of palladium and nickel.

The light emitting device includes a micro LED (Micro Light Emitting Diode) formed in a size of more than 1 μm and less than 200 μm, and may be bonded to one side of the substrate through a SMT (Surface Mounting Technology) process.

It may further include a capacitor bonded to one surface of the substrate and accommodated in the cover part.

It may include a solder ball bonded to one surface of the substrate and exposed to the outside of the cover part.

A package module manufacturing method according to an embodiment of the present invention includes: preparing a base material; Forming a pixel portion on one side of the substrate and forming a terminal portion; A process of bonding a light emitting device to the terminal portion; and forming a cover portion surrounding the pixel portion and the light emitting device on one surface of the substrate.

The process of forming the cover part includes forming a dam member surrounding the pixel part on one surface of the substrate; forming a light-transmitting member by injecting transparent epoxy resin into the dam member to a height at which the pixel portion and the light-emitting device can be immersed; A process of forming a light blocking member to surround the light transmitting member using an epoxy resin containing a black pigment may be included.

The process of forming the cover unit may include a process of covering the pixel unit and the light emitting device by bonding a cap member having a coating layer capable of reflecting an optical signal on an inner surface to one surface of the substrate.

The process of forming the cover part may include a process of laminating and molding an epoxy resin to surround the cap member.

A method of operating a package module according to an embodiment of the present invention is a method of operating a package module including a photo sensor, comprising: emitting an optical signal from a light emitting device; A process of reflecting an optical signal by a cover part; and a process of receiving an optical signal through a pixel unit, wherein the light emitting device, the cover unit, and the pixel unit are formed on the same substrate.

The process of reflecting the optical signal includes: advancing the optical signal into a light-transmitting member of the cover portion surrounding the light-emitting device and the pixel portion; A process of reflecting an optical signal at an interface between a light blocking member of the cover portion surrounding the light transmitting member and the light transmitting member may be included.

The process of reflecting the optical signal includes: propagating the optical signal in an air layer between the substrate and a cap member of the cover portion surrounding the light-emitting device and the pixel unit; It may include a process of reflecting an optical signal onto a coating layer of the cover portion coated on the inner surface of the cap member.

According to an embodiment of the present invention, the light emitting device, the pixel portion, and the substrate can be modularized at the wafer level by bonding the light emitting device to one surface of the substrate on which the pixel portion is formed and forming a cover portion to surround the pixel portion and the light emitting device. there is.

That is, the package module can be manufactured by directly bonding the light emitting module to the substrate on which the pixel portion is formed, without using a printed circuit board. Accordingly, the manufacturing process of the package module can be simplified, and the size of the package module, that is, the width and height, can be minimized.

Additionally, according to an embodiment of the present invention, by moving the optical signal within the cover portion, it is possible to prevent external light from being transmitted to the pixel portion of the photosensor.

1 is a schematic diagram of a package module according to a first embodiment of the present invention.
Figure 2 is a schematic diagram of a package module according to a modified example of the first embodiment of the present invention.
Figure 3 is a schematic diagram of a package module according to a second embodiment of the present invention.
Figure 4 is a schematic diagram of a package module according to a modified example of the second embodiment of the present invention.
5 to 12 are schematic diagrams for explaining a method of manufacturing a package module according to embodiments of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. However, the present invention is not limited to the embodiments disclosed below, and will be implemented in various different forms. Only the embodiments of the present invention are provided to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention. The drawings may be exaggerated to explain embodiments of the present invention, and like symbols in the drawings refer to like elements.

The package module according to an embodiment of the present invention may be referred to, for example, as a wafer level photosensor shrinkage package module or a wafer level QRNG photo sensor shrinkage package module. The package module according to this embodiment of the present invention can be used to generate quantum random numbers in various technical fields such as security and quantum cryptography communication.

Wafer level means that when bonding a wafer with pixel portions and a light emitting device, the light emitting device is packaged by bonding the light emitting device directly onto the wafer with the pixel portion, rather than bonding them through a printed circuit board.

Quantum random numbers (also called 'pure random numbers') are used in various fields that require randomness, such as quantum cryptography communication, numerical simulation, and statistical analysis.

A semiconductor device that generates quantum random numbers is the QRNG (Quantum Random Number Generator) photosensor chip. QRNG photosensor chip generates quantum random numbers based on quantum optics. A QRNG photosensor chip can generate high-quality quantum random numbers only when it receives a stable optical signal from a light source. Otherwise, the algorithm of the post-processing step after receiving the optical signal may become complicated, and the quality of randomness of the generated quantum random number may deteriorate. In an embodiment of the present invention, for example, a QRNG photosensor chip can be manufactured as a package module at the wafer level. Accordingly, the overall height of the package module can be reduced and the manufacturing process of the package module can be simplified. Additionally, since the light emitting device and pixel portion of the QRNG photosensor chip can exchange optical signals inside the package module, the optical signal from the light emitting device can be stably transmitted to the pixel portion.

The package module according to an embodiment of the present invention may be used as a variety of package modules capable of converting optical signals into electrical signals.

The package module according to an embodiment of the present invention presents technical features that can minimize the height, simplify the manufacturing process, and block external optical signals.

1 is a schematic diagram of a package module according to a first embodiment of the present invention. Additionally, Figure 2 is a schematic diagram of a package module according to a modified example of the first embodiment of the present invention.

Figure 3 is a schematic diagram of a wafer level photo sensor shrinkage package module according to a second embodiment of the present invention. And Figure 4 is a schematic diagram of a wafer level photo sensor shrinkage package module according to a modified example of the second embodiment of the present invention.

1 to 4, the package module according to embodiments of the present invention includes a substrate 100, a pixel portion 210 formed on one side of the substrate 100, and a light emitting device bonded to one side of the substrate 100. Cover portions 400A, 400B, and 400B' surrounding the pixel portion 210 and the light emitting device 230 so that the optical signal generated by the device 230 and the light emitting device 230 can be reflected to the pixel portion 210. Includes.

In addition, the package module according to embodiments of the present invention is formed on one side of the substrate 100, surrounds the periphery of the pixel portion 210 on one side of the substrate 100, and has a terminal portion to which the light emitting device 230 is bonded. 220), and a solder ball 300 bonded to one surface of the substrate 100 and exposed to the outside of the cover portions 400A, 400B, and 400B'.

Additionally, the package module according to embodiments of the present invention may further include a capacitor 500 that is bonded to the terminal portion 220 and accommodated inside the cover portions 400A, 400B, and 400B'.

Here, the pixel unit 210, the terminal unit 220, and the light emitting device 230 may form the photosensor 200. This photosensor 200 may also be referred to as a photosensor chip or QRNG photosensor chip.

Hereinafter, with reference to FIG. 1, a package module according to a first embodiment of the present invention will be described in detail.

The substrate 100 may include a wafer. The substrate 100 may include one side and the other side facing each other in the vertical direction, and a side surface connecting the one side and the other side. The base material 100 may extend horizontally and vertically and have a predetermined area and thickness. The substrate 100 may have a square plate shape, for example. Of course, the shape of the substrate 100 may vary.

A pixel area S1 may be formed at a predetermined location on one side of the substrate 100 with a predetermined area. Additionally, a terminal area S2 may be formed at a predetermined location on one surface of the substrate 100 with a predetermined area. The pixel area S1 may be spaced a predetermined distance from the center of one side of the substrate 100. Of course, the pixel area S1 may be formed at the center of one side of the substrate 100. The terminal area S2 may surround the pixel area S1. That is, the remaining area of one side of the substrate 100 excluding the pixel area S1 may be formed as the terminal area S2. At this time, the pixel portion 210 may be formed in the pixel area S1, and the terminal portion 220 may be formed in the terminal area S2. A light emitting device 230 may be bonded to the terminal portion 220. Accordingly, the pixel unit 210 and the light emitting device 230 may be disposed adjacent to the same surface of the substrate 100, that is, the wafer. That is, the structure of one photosensor 200 can be completed on the same side of the wafer. From this, the size of the package module, such as the height and width of the package module, can be reduced. For example, a package module manufactured to complete the structure of one photosensor 200 on the same side of the wafer can be manufactured with a height of 400㎛ to 500㎛ by reducing the height by half compared to other package modules. In addition, by completing the structure of one photosensor 200 on the same side of the wafer, the width of the package module is reduced by a predetermined amount corresponding to half the amount of reduction in the height of the package module, thereby reducing the width of the package module to 100㎛. It can be reduced to a size of 200㎛.

The pixel unit 210 is a light receiving unit of the photosensor 200 and may include a plurality of photo diodes formed on one surface of the substrate 100, a color filter provided on the photo diode, and a micro lens provided on the color filter. . The pixel unit 210 may be accommodated inside the cover unit 400A. The pixel unit 210 can receive an optical signal traveling inside the cover unit 400A.

The pixel unit 210 may receive an optical signal generated by the light emitting device 220 and generate an electrical signal for generating quantum random numbers. The pixel unit 210 may be electrically connected to the terminal unit 220 through a predetermined thin film pattern (not shown) formed on one surface of the substrate 100. The pixel unit 210 may transmit an electrical signal for generating quantum random numbers to the outside through the solder ball 300 bonded to the terminal unit 220.

The terminal unit 220 can transmit the electrical signal generated in the pixel unit 210 to the outside, transmit an external control signal to the light emitting element 220, and receive power supplied from the outside or the capacitor 500. It can be delivered to the pixel unit 210 and the light emitting device 220.

The terminal unit 220 includes a surface mounting pattern 221, an input/output pattern 222, a first passivation film 223, a first bonding pattern 224, a second bonding pattern 225, and a second passivation film 226. may include. At this time, the surface mounting pattern 221, the input/output pattern 222, the first bonding pattern 224, and the second bonding pattern 225 may include a metal material, such as copper. The first passivation film 223 and the second passivation film 226 may include a polymer material.

The surface mounting pattern 221 may be formed at a predetermined location in the terminal area S2 close to the pixel area S1. Additionally, the input/output pattern 222 may be formed at a predetermined position in the terminal area S2 close to the edge of one surface of the substrate 100. At this time, one side of the surface mounting pattern 221 and the input/output pattern 222 may be at the same height as one side of the substrate 100, and the other side may be at a lower height than one side of the substrate 100. The height may be the height from one side of the substrate 100.

Of course, the surface mounting pattern 221 and the input/output pattern 222 may be formed to be convex upward from one surface of the substrate 100, or may be formed to be concave downward.

The first passivation film 223 may be formed to cover one side of the substrate 100, the surface mounting pattern 221, and the input/output pattern 222 in the terminal area S2. At this time, the pixel area S1 on one side of the substrate 100 may be exposed above the first passivation film 223. In addition, a plurality of holes may be formed in the first passivation film 223, and one side of each of the surface mounting pattern 221 and the input/output pattern 222 is exposed above the first passivation film 223 through the holes. It can be.

The first bonding pattern 224 may be formed on an exposed portion of one surface of the surface mounting pattern 221. The lower portion of the second bonding pattern 225 may be formed on an exposed portion of one side of the input/output pattern 222, and the upper portion may extend to a predetermined area along one side of the first passivation film 223.

The second passivation film 226 may be formed to cover one surface of the first passivation film 223 and the second bonding pattern 225 in the terminal area S2. At this time, one surface of the first bonding pattern 224 and a predetermined area of the first passivation film 223 around the first bonding pattern 224 may be exposed to the top of the second passivation film 226. Additionally, a plurality of holes may be formed in the second passivation film 226. One side of the second bonding pattern 225 may be exposed above the second passivation film 226 through the hole in the second passivation film 226 .

The light emitting device 230 may include a micro LED (Micro Light Emitting Diode) formed in a size of more than 1 μm and less than or equal to 200 μm. The light emitting device 230 may receive a predetermined power and control signal for generating an optical signal through the terminal unit 220. The light emitting device 230 may be accommodated inside the cover portion 400A. The optical signal generated by the light emitting device 230 may proceed inside the cover portion 400A and enter the pixel portion 210.

On the other hand, if the size of the light emitting device 230 is less than 1㎛, manufacturing may be difficult. Additionally, if the size of the light emitting device 230 exceeds 200㎛, the overall height of the package module may be higher than the desired height. Preferably, the size of the light emitting device 230 may be 100㎛. Accordingly, the overall height of the package module can be manufactured to a desired height. Meanwhile, the above-mentioned size may mean height. Meanwhile, the light emitting device 230 may be spaced apart from the pixel portion 210 by a distance of 100 μm to 150 μm.

The light emitting device 230 may be bonded to one side of the substrate 100 by, for example, a Surface Mounting Technology (SMT) process. That is, a metal pattern 231 may be provided on the lower part of the light emitting device 230. Additionally, the metal pattern 231 may be bonded to one surface of the first bonding pattern 224 through an SMT process. Accordingly, the light emitting device 230 can be bonded to the first bonding pattern 224.

Meanwhile, various types of light emitting devices 230 other than micro LEDs may be applied depending on the type of light used to generate quantum random numbers.

The solder ball 300 may be bonded to one surface of the substrate 100 and exposed to the outside of the cover portion 400A. The solder ball 300 serves to bond the package module to the mobile device. The solder ball 300 may be a spherical member formed with a predetermined diameter. The solder ball 300 may be bonded to the second bonding pattern 225 of the terminal portion 220.

The solder ball 300 may include tin-silver-copper alloy (Sn-Ag-Cu). This solder ball 300 may have a core ball structure for optimal pitch (fine pitch) and high profile. Here, the core ball refers to a structure that has a metal with a relatively high melting point as a core in the center. At this time, the core may include a metal with a higher melting point than the tin-silver-copper alloy, for example, copper.

The cover portion 400A may be formed on one side of the substrate 100 to surround the pixel portion 210 and the light emitting device 230. Accordingly, the cover unit 400A can reflect the optical signal generated by the light emitting device 230 to the pixel unit 210.

The cover portion 400A is formed on one side of the substrate 100, includes a light-transmitting member 420 in which the pixel portion 210 and the light-emitting device 230 are accommodated, and blocks light surrounding the light-transmitting member 420. It may include a member 430. In addition, the cover portion 400A may include a dam member 410 that extends along the circumference of the light transmitting member 420 on one surface of the substrate 100 and is accommodated inside the light blocking member 430. there is.

The dam member 410 is used to prevent unwanted transparent epoxy resin from being applied on the pixel portion 210 and the light emitting device 230 to form the light transmitting member 420 in the process of manufacturing a package module. It serves to prevent invasion into the area. That is, by the dam member 410, a transparent epoxy resin can be applied on one surface of the substrate 100 to a predetermined height sufficient to submerge the pixel portion 210 and the light emitting device 230.

The light transmitting member 420 may be formed at a predetermined height inside the dam member 410. Accordingly, the pixel portion 210 and the light emitting device 230 may be accommodated inside the light transmitting member 420. The light transmitting member 420 may include transparent epoxy resin having a light transmittance ranging from 90% to 100%. If the light transmittance is less than 90%, it is difficult to transmit a sufficient light signal to the pixel unit 210. As the light transmittance of the light transmitting member 420 approaches 100%, the light transmitting member 420 can transmit the light signal therein while minimizing the loss of the light signal.

Meanwhile, one side of the light transmitting member 420, for example, an upper surface, may be convex upward. For example, when applying a transparent epoxy resin, the upper surface of the light transmitting member 420 can be formed to be convex upward using the surface tension of the transparent epoxy resin.

Accordingly, the light signal may be reflected at the interface between the light transmitting member 420 and the light blocking member 430 and concentrated on the pixel portion 210.

The light blocking member 430 may be formed on one surface of the substrate 100 to cover the light transmitting member 420. At this time, the light blocking member 430 may be formed to cover the entire surface of the substrate 100. Of course, the light blocking member 430 may be formed to cover the entire light transmitting member 420 and a portion of one surface of the substrate 100. At this time, the height of one surface of the light blocking member 430, for example, the upper surface, may be higher than the height of one surface of the light transmitting member 420 and lower than the height of the solder ball 300.

The light blocking member 430 serves to block optical signals from the outside and serves to form a predetermined interface for reflecting the optical signals between the light blocking member 420 and the light transmitting member 420. The light blocking member 430 may include an epoxy resin containing a black pigment for blocking external visible light and near-infrared rays, such as an underfill epoxy resin containing a black pigment. Of course, the types of epoxy resin may vary.

At this time, the types of black pigment contained in the light blocking member 430 may vary within the range that satisfies the ability to block visible rays and near-infrared rays incident on the light blocking member 430 from the outside.

The thickness t of the light blocking member 430 in the vertical direction may be in the range of 20 μm to 100 μm. If the minimum thickness of the light blocking member 430 is less than 20㎛, an optical signal of a certain wavelength among visible light and near-infrared light may be incident into the light transmitting member 420 from the outside. When the maximum thickness of the light blocking member 430 becomes 100㎛, it is possible to block optical signals in all wavelength ranges of visible light and near-infrared light incident from the outside. Accordingly, the maximum thickness of the light blocking member 430 does not need to be greater than 100㎛.

Meanwhile, the portion where the light blocking member 430 has the minimum thickness may be a predetermined portion located above the center of the convex surface of the light transmitting member 420.

According to the first embodiment of the present invention, the optical signal generated by the light-emitting device 230 travels inside the light-transmitting member 420 and is reflected at the boundary between the light-transmitting member 420 and the light blocking member 430. may be incident on the pixel unit 210.

Referring to FIG. 2, a package module according to a modified example of the first embodiment of the present invention will be described.

According to a modified example of the first embodiment of the present invention, the package module may further include a capacitor 500. The capacitor 500 may be bonded to the terminal portion 220 formed on one surface of the substrate 100 and may be accommodated in the light transmitting member 420 of the cover portion 400A.

At this time, the terminal portion 220 may further include first and second metal films 227 and 228 for bonding the capacitor 500, and a third metal film 510 is provided on the lower part of the capacitor 500. It can be. A first metal film 227 may be formed in the terminal area S2 on one side of the substrate 100, and a second metal film 228 may be formed on one side of the first metal film 227. At this time, a hole may be formed in the first passivation film 223 to expose the second metal film 228 upward. The third metal film 510 may be bonded to the second metal film 228 . The capacitor 500 can supply power to the light emitting device 230.

Referring to FIG. 3, a package module according to a second embodiment of the present invention will be described.

The configuration of the cover portion 400B of the package module according to the second embodiment of the present invention may be different from the cover portion 400A of the package module according to the first embodiment of the present invention.

The cover portion 400B of the package module according to the second embodiment of the present invention is formed to be convex upward from one side of the substrate 100 and includes a cap member inside which the pixel portion 210 and the light emitting device 230 are accommodated. (440), the bonding member 450 for bonding the cap member 440 to the substrate 100 may include a coating layer (not shown) formed on the inner surface of the cap member 440 to reflect the optical signal. .

The cap member 440 is formed to be convex upward from one surface of the substrate 100, and its interior may be open downward. The cap member 440 may have a rectangular cylinder shape with the interior open downward. Of course, the shape of the cap member 440 may vary. Meanwhile, the cap member 440 may include a metal material. The cap member 440 may protect the pixel unit 210 and the light emitting device 230. Additionally, the cap member 440 may block optical signals from the outside.

The cap member 440 may have a bonding member 450, such as a bonding epoxy resin, attached to its edge, and can be bonded to the second passivation film 226 on one side of the substrate 100 through the bonding member 450. That is, the edge of the cap member 440 may be bonded to one surface of the substrate 100.

At this time, a coating layer (not shown) that can reflect the optical signal may be formed on the inner surface of the cap member 440. The coating layer may include at least one material selected from palladium and nickel. Accordingly, the coating layer can reflect the optical signal generated by the light emitting device 230 to the pixel unit 210. The coating layer may be formed, for example, by plating.

An air layer may be formed between the pixel unit 210 and the light emitting device 230 and the coating layer. Accordingly, the optical signal travels through the air layer inside the cap member 440, is reflected from the coating layer, and may be incident on the pixel portion 210.

Referring to FIG. 4, in a modified example of the second embodiment of the present invention, the cover portion 400B' may further include a molding member 460.

The molding member 460 may be formed on one side of the substrate 100 to surround the cap member 440. At this time, the molding member 460 may be formed to surround only the cap member 440 or both the terminal portion 220 and the solder ball 300 formed on one surface of the substrate 100, including the cap member 440. there is. Here, one surface of the solder ball 300, for example, the upper surface, may protrude upward from the molding member 460. This molding member 460 may include an epoxy resin, such as an underfill epoxy resin. Of course, the material of the molding member 460 may vary.

5 to 12 are schematic diagrams for explaining a method of manufacturing a package module according to embodiments of the present invention.

Hereinafter, with reference to FIGS. 5 to 12, a method of manufacturing a package module according to embodiments of the present invention will be described in detail.

The package module manufacturing method according to embodiments of the present invention includes a process of preparing a substrate 100, forming a pixel portion 210 on one side of the substrate 100, forming a terminal portion 220, and forming a terminal portion 220. ) and forming cover parts 400A, 400B, and 400B' surrounding the pixel part 210 and the light emitting element 230 on one side of the substrate 100. .

First, a process of preparing the substrate 100 is performed. Here, the substrate 100 may include a wafer. That is, the process of preparing the substrate 100 may include preparing a wafer with a predetermined area and a predetermined thickness.

Afterwards, a process of forming the pixel portion 210 on one side of the substrate 100 is performed. For example, a plurality of photo diode layers are formed with a predetermined area at a predetermined position on one surface of the substrate 100, and a color filter layer is formed on the photo diode layer. Then, a plurality of microlens layers are formed on the color filter layer. At this time, a predetermined area on one side of the substrate 100 where the pixel portion 210 is formed may be referred to as a pixel area S1.

Afterwards, a terminal portion 220 is formed on one side of the substrate 100. At this time, the terminal portion 220 may be formed on the remaining surface of the substrate 100 excluding the pixel area S1. A predetermined area on one surface of the substrate 100 where the terminal portion 200 is formed is referred to as a terminal region S2.

For example, referring to FIGS. 5 and 6, a surface mounting pattern 221 is formed at a predetermined position in the terminal area S2 on one surface of the substrate 100. At this time, the surface mounting pattern 221 may be formed at a predetermined location close to the pixel portion 210. Additionally, an input/output pattern 222 is formed at a predetermined position in the terminal area S2 on one side of the substrate 100 spaced from the surface mounting pattern 221. Here, the input/output pattern 222 may be formed at a predetermined location that is far away from the pixel portion 210 and close to the edge of the substrate 100. At this time, the first metal film 227 may be further formed at a predetermined position in the terminal area S2 on one surface of the substrate 100.

In addition, referring to FIG. 7, in the terminal area S2 on one side of the substrate 100, a first passivation film 223 is formed to cover one side of the substrate 100, the surface mounting pattern 221, and the input/output pattern 222. ) is formed, and a plurality of holes are formed in the first passivation film 223 to expose one surface of each of the surface mounting pattern 221 and the input/output pattern 222 upward.

Thereafter, referring to FIG. 8, a first bonding pattern 224 is formed on an exposed portion of one side of the surface mounting pattern 221, and a second bonding pattern 225 is formed on an exposed portion of one side of the input/output pattern 222. ) is formed. At this time, a portion of the second bonding pattern 225 may be extended to a predetermined area along one side of the first passivation film 223.

Thereafter, as shown in FIG. 9, in the terminal area S2 on one side of the substrate 100, the first passivation film 223, the first bonding pattern 224, and the second bonding pattern 225 are covered. A second passivation film 226 is formed, and a plurality of holes are formed in the second passivation film 226 to expose one side of the first bonding pattern 224 and one side of the second bonding pattern 225 upward.

At this time, when forming the surface mounting pattern 221 and the input/output pattern 222 on one side of the substrate 100 and forming the first metal film 227 together, the terminal area S2 on one side of the substrate 100 In, a first passivation film 223 is formed to cover one side of the substrate 100, the surface mounting pattern 221, the input/output pattern 222, and the first metal film 227. Afterwards, a plurality of holes are formed in the first passivation film 223 to expose the surface mounting pattern 221, the input/output pattern 222, and the first metal film 227 above the first passivation film 223. . Thereafter, a first bonding pattern 224 is formed on the surface mounting pattern 221, a second bonding pattern 225 is formed on the input/output pattern 222, and a second bonding pattern 225 is formed on the first metal film 227. A metal film 228 is formed. Thereafter, in the terminal area S2 on one side of the substrate 100, the first passivation film 223, the first bonding pattern 224, the second bonding pattern 225, and the second metal film 228 are covered. A second passivation film 226 is formed, and a plurality of holes are formed in the second passivation film 226 to form a first bonding pattern 224, a second bonding pattern 225, and a second metal film 228. It can be exposed upward (see Figure 2).

Through this process, the terminal portion 220 can be formed on one side of the substrate 100.

Next, referring to FIG. 10 , a process of bonding the light emitting device 230 to the terminal portion 220 is performed. First, a micro LED of a predetermined size is prepared as the light emitting device 230, and a metal pattern 231 is formed on the lower part of the light emitting device 230. Additionally, the light emitting device 230 can be bonded to the terminal portion 220 by bonding the metal pattern 231 to the first bonding pattern 224 using a flip chip bonding method.

Next, referring to FIG. 11 , a process of joining the solder ball 300 to the terminal portion 220 can be performed. That is, the spherical solder ball 300 can be bonded to the second bonding pattern 225 of the terminal portion 220 using a flip chip bonding method.

Meanwhile, when the second metal film 228 is formed on the terminal portion 220 on one side of the substrate 100, after the process of joining the solder ball 300, the capacitor 500 is formed on the second metal film 228. A further joining process may be performed.

Thereafter, a process of forming cover parts 400A, 400B, and 400B' surrounding the pixel part 210 and the light emitting device 230 is performed on one side of the substrate 100.

First, referring to FIGS. 12 and 13, the process of forming the cover portion 400A according to the first embodiment involves forming a pixel portion 210 and a light emitting surface on one side of the substrate 100 using an epoxy resin. A ring-shaped dam member 410 surrounding the element 230 is formed. Thereafter, a transparent epoxy resin is injected into the dam member 410 to a predetermined height at which the pixel portion 210 and the light emitting device 230 can be immersed to form the light transmitting member 420. Thereafter, the light blocking member 430 may be formed to surround the light transmitting member 420 with an underfill epoxy resin containing a black pigment for blocking external visible rays and near-infrared rays. At this time, each epoxy resin may be formed on one side of the substrate 100 by vacuum lamination. Additionally, a baking process for curing the epoxy resin may be performed between each process.

Through this process, a cover portion 400A surrounding the pixel portion 210 and the light emitting device 230 can be formed, and a light transmitting member 420 and a light transmitting member 420 are formed on the upper side of the pixel portion 210 and the light emitting device 230. The interface of the blocking member 430 can be positioned.

At this time, due to the difference in light transmittance between the light transmitting member 420 and the light blocking member 430, the light signal may be reflected at their interface. Accordingly, these interfaces can be used to reflect optical signals during operation of the package module.

Meanwhile, according to the second embodiment of the present invention, the process of forming the cover part 400B includes a cap member ( A process of covering the pixel unit 210 and the light emitting device 230 by bonding 440 may be included (see FIG. 3). For example, a bonding epoxy resin may be attached to the edge of the cap member 440, and the cap member 440 may be bonded to one surface of the substrate 100 through the bonding epoxy resin.

Meanwhile, in the process of forming the cover portion 400B' according to a modified example of the second embodiment of the present invention, after the process of bonding the cap member 440 to one surface of the substrate 100, the cap member 440 is It may further include a process of laminating and molding the underfill epoxy resin using a vacuum lamination method to surround it. Through this process, the molding member 460 can be formed on the cap member 440.

Meanwhile, the package module manufacturing method according to embodiments of the present invention may further include a process of adjusting the thickness of the substrate by grinding the other side of the substrate 100 after forming the cover portion. Accordingly, the overall height of the package module can be adjusted to a desired height. At this time, the manufacturing processes of the above-described package module may be performed at the wafer level.

Hereinafter, a method of operating a package module including a photo sensor according to embodiments of the present invention will be described.

A method of operating a package module according to embodiments of the present invention includes a process of emitting an optical signal from the light-emitting device 230, a process of reflecting the optical signal by the cover parts 400A, 400B, and 400B', and a pixel part. It includes a process of receiving an optical signal at (210).

Here, the light emitting device 230, the cover portions 400A, 400B, and 400B', and the pixel portion 210 are formed on the same substrate 100.

First, an optical signal is emitted from the light emitting element. That is, a control signal is generated from the outside, and the control signal is input to the light emitting device 230 through the solder ball 300 and the terminal portion 220. Accordingly, the light emitting device 230 is operated to generate an optical signal. At this time, the power required to generate the optical signal can be supplied from the outside or the capacitor 500.

Accordingly, an optical signal is generated in the light emitting device 230, and the generated optical signal 230 may proceed radially within the cover portions 400A, 400B, and 400B'.

Afterwards, the optical signal is reflected by the cover parts 400A, 400B, and 400B'.

That is, according to the first embodiment of the present invention, an optical signal progresses into the light-transmitting member 420 of the cover portion 400A surrounding the light-emitting device 230 and the pixel portion 210, and the light-transmitting member 420 An optical signal is reflected at the interface between the light blocking member 430 and the light transmitting member 420 provided to surround the .

In addition, according to the first embodiment of the present invention, light is transmitted within the air layer between the cap member 440 of the cover portions 400B and 400B' surrounding the light emitting device 230 and the pixel portion 210 and the substrate 100. The signal is advanced, and the optical signal is reflected on the coating layer coated on the inner surface of the cap member 440.

Afterwards, the optical signal is received by the pixel unit 210. That is, the pixel unit 210 may receive an optical signal reflected from the interface between the light blocking member 430 and the light transmitting member 420 or from the coating layer on the inner surface of the cap member 440. The pixel unit 210 may receive an optical signal, generate an electrical signal, and transmit the generated electrical signal to the outside through the terminal unit 200 and the solder ball 300. Electrical signals transmitted externally can be used to generate quantum random numbers.

As described above, the package module according to an embodiment of the present invention can be manufactured without using a printed circuit board by manufacturing the package module at the wafer level, and thus the overall structure and size of the package module can be changed. It can be reduced to a compact size.

Additionally, the package module can prevent the pixel part of the photosensor from being polluted by external light signals by transmitting an optical signal from inside the cover part. Accordingly, high-quality quantum random numbers can be generated in a mobile device equipped with a package module.

The above embodiments of the present invention are for illustrative purposes only and are not intended to limit the present invention. It should be noted that the configurations and methods disclosed in the above embodiments of the present invention may be combined or modified into various forms by combining or crossing each other, and the resulting modifications may also be considered within the scope of the present invention. In other words, the present invention will be implemented in a variety of different forms within the scope of the claims and equivalent technical ideas, and various embodiments are possible within the scope of the technical idea of the present invention by those skilled in the art to which the present invention pertains. You will be able to understand.

100: base material 200: photo sensor
210: pixel portion 220: terminal portion
230: light emitting device 231: metal pattern
300: Solder ball 400A, 400B, 400B': Cover part
410: dam member 420: light transmission member
430: light blocking member 440: cap member
450: joining member 460: molding member
500: capacitor

Claims (20)

write;
a pixel portion formed on one side of the substrate;
A light emitting device bonded to one surface of the substrate; and
A cover unit surrounding the pixel unit and the light-emitting device to reflect the optical signal generated by the light-emitting device to the pixel unit,
The cover part,
a light-transmitting member formed on one side of the substrate and accommodating the pixel portion and the light-emitting device therein; and
It includes a light blocking member surrounding the light transmitting member,
The optical signal is reflected at the boundary of the light transmitting member and the light blocking member and is incident on the pixel portion,
The light blocking member includes an epoxy resin containing black pigment to block external visible rays and near-infrared rays,
A package module wherein the thickness of the light blocking member ranges from 20㎛ to 100㎛. In claim 1,
The substrate includes a wafer,
A package module in which the pixel portion and the light emitting device are disposed adjacent to each other on the same surface of the wafer. In claim 1,
The cover part,
A package module comprising: a dam member extending along the circumference of the light-transmitting member on one surface of the substrate and accommodated inside the light-blocking member. In claim 1,
The light transmitting member is a package module comprising a transparent epoxy resin having a light transmittance in the range of 90% to 100%. write;
a pixel portion formed on one side of the substrate;
A light emitting device bonded to one surface of the substrate; and
A cover unit surrounding the pixel unit and the light-emitting device to reflect the optical signal generated by the light-emitting device to the pixel unit,
The cover part,
a cap member that is formed to be convex upward from one side of the substrate and accommodates the pixel portion and the light emitting device therein; and
A coating layer formed on the inner surface of the cap member to reflect optical signals,
A package module in which an air layer is formed between the pixel portion, the light emitting device, and the coating layer. In claim 5,
The cover part,
A package module further comprising a molding member surrounding the cap member. In claim 5,
The cap member includes a metal material,
A package module wherein the coating layer includes at least one material selected from palladium and nickel. The method of any one of claims 1 to 7,
A package module in which the light emitting device includes a micro LED (Micro Light Emitting Diode) formed in a size of more than 1 μm and less than 200 μm, and is bonded to one side of the substrate by a SMT (Surface Mounting Technology) process. The method of any one of claims 1 to 7,
A package module further comprising a capacitor bonded to one surface of the substrate and accommodated in the cover portion. The method of any one of claims 1 to 7,
A package module including a solder ball bonded to one surface of the substrate and exposed to the outside of the cover part. write;
a pixel portion formed on one side of the substrate;
A light emitting device bonded to one surface of the substrate; and
A cover unit surrounding the pixel unit and the light-emitting device to reflect the optical signal generated by the light-emitting device to the pixel unit,
A package module in which the light emitting device includes a micro LED (Micro Light Emitting Diode) formed in a size of more than 1 μm and less than 200 μm, and is bonded to one side of the substrate by a SMT (Surface Mounting Technology) process. write;
a pixel portion formed on one side of the substrate;
A light emitting device bonded to one surface of the substrate;
a cover unit surrounding the pixel unit and the light-emitting device to reflect the optical signal generated by the light-emitting device to the pixel unit; and
A package module including a solder ball bonded to one surface of the substrate and exposed to the outside of the cover part. In claim 11 or claim 12,
A package module further comprising a capacitor bonded to one surface of the substrate and accommodated in the cover portion. delete The process of preparing materials;
Forming a pixel portion on one side of the substrate and forming a terminal portion;
A process of bonding a light emitting device to the terminal portion; and
A process of forming a cover portion surrounding the pixel portion and the light emitting device on one surface of the substrate so that the optical signal generated by the light emitting device can be reflected to the pixel portion,
The process of forming the cover part is,
forming a dam member surrounding the pixel portion on one surface of the substrate;
forming a light-transmitting member by injecting transparent epoxy resin into the dam member to a height at which the pixel portion and the light-emitting device can be immersed;
A process of forming a light blocking member with a thickness in the range of 20㎛ to 100㎛ to surround the light transmitting member with an epoxy resin containing a black pigment for blocking external visible rays and near-infrared rays,
The optical signal is reflected at a boundary between the light transmitting member and the light blocking member and is incident on the pixel portion. The process of preparing materials;
Forming a pixel portion on one side of the substrate and forming a terminal portion;
A process of bonding a light emitting device to the terminal portion;
A process of forming a cover portion surrounding the pixel portion and the light emitting device on one surface of the substrate,
The process of forming the cover part is,
A process of covering the pixel portion and the light emitting device by bonding a cap member formed on an inner surface of a coating layer capable of reflecting an optical signal to one surface of the substrate; and
A package module manufacturing method comprising: laminating and molding an epoxy resin to surround the cap member. delete delete A method of operating a package module including a photo sensor, comprising:
A process of emitting an optical signal from a light emitting device;
A process of reflecting an optical signal by a cover part;
Including a process of receiving an optical signal into the pixel unit,
The light emitting element, the cover part, and the pixel part are formed on the same substrate,
The process of reflecting the optical signal is,
A process of advancing an optical signal into a light-transmitting member of the cover portion surrounding the light-emitting device and the pixel portion;
A method of operating a package module comprising: reflecting an optical signal at an interface between a light-blocking member of the cover portion surrounding the light-transmitting member and the light-transmitting member. A method of operating a package module including a photo sensor, comprising:
A process of emitting an optical signal from a light emitting device;
A process of reflecting an optical signal by a cover part;
Including a process of receiving an optical signal into the pixel unit,
The light emitting element, the cover part, and the pixel part are formed on the same substrate,
The process of reflecting the optical signal is,
A process of propagating an optical signal in an air layer between the substrate and a cap member of the cover portion surrounding the light emitting device and the pixel portion;
A method of operating a package module comprising: reflecting an optical signal to a coating layer of the cover portion coated on an inner surface of the cap member.