KR102601394B1 - 니오브산 리튬 단결정 기판과 그 제조 방법 - Google Patents

니오브산 리튬 단결정 기판과 그 제조 방법 Download PDF

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Publication number
KR102601394B1
KR102601394B1 KR1020177035458A KR20177035458A KR102601394B1 KR 102601394 B1 KR102601394 B1 KR 102601394B1 KR 1020177035458 A KR1020177035458 A KR 1020177035458A KR 20177035458 A KR20177035458 A KR 20177035458A KR 102601394 B1 KR102601394 B1 KR 102601394B1
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KR
South Korea
Prior art keywords
substrate
single crystal
lithium niobate
volume resistivity
niobate single
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English (en)
Korean (ko)
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KR20180019541A (ko
Inventor
토미오 카지가야
Original Assignee
스미토모 긴조쿠 고잔 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H01L21/02598—
    • H01L21/324—
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Acoustics & Sound (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020177035458A 2015-06-18 2016-06-08 니오브산 리튬 단결정 기판과 그 제조 방법 Active KR102601394B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015123187A JP6721948B2 (ja) 2015-06-18 2015-06-18 ニオブ酸リチウム単結晶基板とその製造方法
JPJP-P-2015-123187 2015-06-18
PCT/JP2016/067067 WO2016204040A1 (ja) 2015-06-18 2016-06-08 ニオブ酸リチウム単結晶基板とその製造方法

Publications (2)

Publication Number Publication Date
KR20180019541A KR20180019541A (ko) 2018-02-26
KR102601394B1 true KR102601394B1 (ko) 2023-11-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177035458A Active KR102601394B1 (ko) 2015-06-18 2016-06-08 니오브산 리튬 단결정 기판과 그 제조 방법

Country Status (6)

Country Link
US (1) US10711371B2 (enExample)
EP (1) EP3312313A4 (enExample)
JP (1) JP6721948B2 (enExample)
KR (1) KR102601394B1 (enExample)
CN (1) CN107683353B (enExample)
WO (1) WO2016204040A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7271487B2 (ja) * 2020-09-28 2023-05-11 信越化学工業株式会社 タンタル酸リチウム単結晶基板の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005179177A (ja) * 2003-11-25 2005-07-07 Sumitomo Metal Mining Co Ltd ニオブ酸リチウム基板およびその製造方法
JP2005314137A (ja) * 2004-04-27 2005-11-10 Yamajiyu Ceramics:Kk 圧電性酸化物単結晶の帯電抑制処理方法、および帯電抑制処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69819971T2 (de) * 1997-07-25 2004-09-02 Crystal Technology, Inc., Palo Alto Vorbehandelte Kristalle aus Lithiumniobat und Lithiumtantalat und das Verfahren zu ihrer Herstellung
JP3938147B2 (ja) * 2003-04-08 2007-06-27 住友金属鉱山株式会社 タンタル酸リチウム基板およびその製造方法
TWI346719B (en) 2003-11-25 2011-08-11 Sumitomo Metal Mining Co Lithium niobate substrate and method of producing the same
JP2006203009A (ja) * 2005-01-21 2006-08-03 Yamajiyu Ceramics:Kk 焦電型赤外線検出素子および焦電型赤外線検出器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005179177A (ja) * 2003-11-25 2005-07-07 Sumitomo Metal Mining Co Ltd ニオブ酸リチウム基板およびその製造方法
JP2005314137A (ja) * 2004-04-27 2005-11-10 Yamajiyu Ceramics:Kk 圧電性酸化物単結晶の帯電抑制処理方法、および帯電抑制処理装置

Also Published As

Publication number Publication date
WO2016204040A1 (ja) 2016-12-22
CN107683353B (zh) 2020-07-17
EP3312313A4 (en) 2018-11-14
JP6721948B2 (ja) 2020-07-15
KR20180019541A (ko) 2018-02-26
US20180135204A1 (en) 2018-05-17
JP2017007882A (ja) 2017-01-12
CN107683353A (zh) 2018-02-09
US10711371B2 (en) 2020-07-14
EP3312313A1 (en) 2018-04-25

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