JP6721948B2 - ニオブ酸リチウム単結晶基板とその製造方法 - Google Patents

ニオブ酸リチウム単結晶基板とその製造方法 Download PDF

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Publication number
JP6721948B2
JP6721948B2 JP2015123187A JP2015123187A JP6721948B2 JP 6721948 B2 JP6721948 B2 JP 6721948B2 JP 2015123187 A JP2015123187 A JP 2015123187A JP 2015123187 A JP2015123187 A JP 2015123187A JP 6721948 B2 JP6721948 B2 JP 6721948B2
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JP
Japan
Prior art keywords
substrate
single crystal
lithium niobate
niobate single
volume resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2015123187A
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English (en)
Japanese (ja)
Other versions
JP2017007882A5 (enExample
JP2017007882A (ja
Inventor
富男 梶ヶ谷
富男 梶ヶ谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2015123187A priority Critical patent/JP6721948B2/ja
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to PCT/JP2016/067067 priority patent/WO2016204040A1/ja
Priority to EP16811515.2A priority patent/EP3312313A4/en
Priority to KR1020177035458A priority patent/KR102601394B1/ko
Priority to CN201680033983.6A priority patent/CN107683353B/zh
Priority to US15/572,595 priority patent/US10711371B2/en
Publication of JP2017007882A publication Critical patent/JP2017007882A/ja
Publication of JP2017007882A5 publication Critical patent/JP2017007882A5/ja
Application granted granted Critical
Publication of JP6721948B2 publication Critical patent/JP6721948B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Acoustics & Sound (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2015123187A 2015-06-18 2015-06-18 ニオブ酸リチウム単結晶基板とその製造方法 Expired - Fee Related JP6721948B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2015123187A JP6721948B2 (ja) 2015-06-18 2015-06-18 ニオブ酸リチウム単結晶基板とその製造方法
EP16811515.2A EP3312313A4 (en) 2015-06-18 2016-06-08 Lithium niobate single crystal substrate and method for producing same
KR1020177035458A KR102601394B1 (ko) 2015-06-18 2016-06-08 니오브산 리튬 단결정 기판과 그 제조 방법
CN201680033983.6A CN107683353B (zh) 2015-06-18 2016-06-08 铌酸锂单晶基板及其制造方法
PCT/JP2016/067067 WO2016204040A1 (ja) 2015-06-18 2016-06-08 ニオブ酸リチウム単結晶基板とその製造方法
US15/572,595 US10711371B2 (en) 2015-06-18 2016-06-08 Lithium niobate single crystal substrate and method of producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015123187A JP6721948B2 (ja) 2015-06-18 2015-06-18 ニオブ酸リチウム単結晶基板とその製造方法

Publications (3)

Publication Number Publication Date
JP2017007882A JP2017007882A (ja) 2017-01-12
JP2017007882A5 JP2017007882A5 (enExample) 2018-02-08
JP6721948B2 true JP6721948B2 (ja) 2020-07-15

Family

ID=57545723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015123187A Expired - Fee Related JP6721948B2 (ja) 2015-06-18 2015-06-18 ニオブ酸リチウム単結晶基板とその製造方法

Country Status (6)

Country Link
US (1) US10711371B2 (enExample)
EP (1) EP3312313A4 (enExample)
JP (1) JP6721948B2 (enExample)
KR (1) KR102601394B1 (enExample)
CN (1) CN107683353B (enExample)
WO (1) WO2016204040A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7271487B2 (ja) * 2020-09-28 2023-05-11 信越化学工業株式会社 タンタル酸リチウム単結晶基板の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69819971T2 (de) * 1997-07-25 2004-09-02 Crystal Technology, Inc., Palo Alto Vorbehandelte Kristalle aus Lithiumniobat und Lithiumtantalat und das Verfahren zu ihrer Herstellung
JP3938147B2 (ja) * 2003-04-08 2007-06-27 住友金属鉱山株式会社 タンタル酸リチウム基板およびその製造方法
JP4492291B2 (ja) * 2003-11-25 2010-06-30 住友金属鉱山株式会社 ニオブ酸リチウム基板の製造方法
TWI346719B (en) 2003-11-25 2011-08-11 Sumitomo Metal Mining Co Lithium niobate substrate and method of producing the same
JP4301564B2 (ja) 2004-04-27 2009-07-22 株式会社山寿セラミックス 圧電性酸化物単結晶の帯電抑制処理方法、および帯電抑制処理装置
JP2006203009A (ja) * 2005-01-21 2006-08-03 Yamajiyu Ceramics:Kk 焦電型赤外線検出素子および焦電型赤外線検出器

Also Published As

Publication number Publication date
WO2016204040A1 (ja) 2016-12-22
KR102601394B1 (ko) 2023-11-13
CN107683353B (zh) 2020-07-17
EP3312313A4 (en) 2018-11-14
KR20180019541A (ko) 2018-02-26
US20180135204A1 (en) 2018-05-17
JP2017007882A (ja) 2017-01-12
CN107683353A (zh) 2018-02-09
US10711371B2 (en) 2020-07-14
EP3312313A1 (en) 2018-04-25

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