KR102591148B1 - Method of manufacturing a non emitting iii-nitride semiconductor stacked structure - Google Patents

Abstract

The present disclosure includes forming a non-luminescent Group III nitride stack on a non-conductive growth substrate; Attaching a temporary substrate to the side of the laminate facing the growth substrate; reducing the thickness of the growth substrate; Attaching a support substrate to the growth substrate of reduced thickness; And, it relates to a method of manufacturing a non-light-emitting group III nitride semiconductor laminate, including the step of removing the temporary substrate.

Description

Method for manufacturing a non-emitting group III nitride semiconductor laminate {METHOD OF MANUFACTURING A NON EMITTING III-NITRIDE SEMICONDUCTOR STACKED STRUCTURE}

The present disclosure generally relates to a method of manufacturing a non-light-emitting group III nitride semiconductor laminate or a group III nitride semiconductor device, and in particular, to a method of manufacturing a non-light emitting (Non-emitting) device such as a power device (e.g., diode, transistor, HEMT, JFET). emitting) relates to a method of manufacturing a group III nitride semiconductor laminate or a group III nitride semiconductor device.

Here, background information related to the present disclosure is provided, and this does not necessarily mean prior art.

1 is a diagram showing an example of a Group III nitride semiconductor device presented in U.S. Patent Publication No. 7,230,284. The Group III nitride semiconductor device (e.g., AlGaN/GaN based HEMT) is grown on a growth substrate 11; e.g., a sapphire substrate. , SiC substrate), buffer layer (12; e.g., Al _x Ga _1-x N (0≤x≤1) buffer layer), channel layer (20; e.g., GaN channel layer), 2DEG (22; two-dimensional electron gas) (22), a barrier layer (18; e.g., AlGaN barrier layer), an insulating layer (24; SiN insulating layer), a drain electrode 14, a gate electrode 16, and a source electrode 17.

From the viewpoint of material cost and crystallinity, it is desirable to use a sapphire substrate as the growth substrate 11, but it is not suitable from the viewpoint of heat dissipation. SiC substrates can be considered from the viewpoint of crystallinity and heat dissipation, but the material cost is expensive and this can become a bigger problem as the device area becomes larger. From the viewpoint of material cost, the use of a low-cost Si substrate can be considered, but a method of improving the crystallinity of the group III nitride semiconductor layer grown on it must be accompanied. Below, we will first look at methods for improving the crystallinity of the group III nitride semiconductor layer during the growth process.

Figure 2 is a diagram showing an example of a Group III nitride semiconductor laminate presented in U.S. Patent Publication No. 2005-0156175. The Group III nitride semiconductor stack includes a c-plane sapphire substrate 100 and a c-plane sapphire substrate 100. It includes a growth prevention film 150 made of SiO ₂ formed thereon, and a group III nitride semiconductor layer 310 selectively grown thereon. Through this growth method, crystal defects in the group III nitride semiconductor stack can be reduced.

Figure 3 is a diagram showing another example of a Group III nitride semiconductor laminate presented in U.S. Patent Publication No. 2005-0156175. The Group III nitride semiconductor stack includes a c-plane sapphire substrate 100 and a c-plane sapphire substrate ( 100) A group III nitride semiconductor template 210 pre-formed thereon, a growth prevention film 150 made of SiO ₂ formed on the group III nitride semiconductor template 210, and a group III nitride semiconductor layer selectively grown thereon. Includes (310). The group III nitride semiconductor template 210 is formed by a conventional method of growing a group III nitride semiconductor on a c-plane sapphire substrate 100. That is, it is formed to a thickness of 1 to 3 μm by forming a seed layer at a growth temperature of around 550°C and in a hydrogen atmosphere, and then growing GaN at a growth temperature of 1050°C. Reference numeral 180 denotes defects (Treading Dislocations), and the development of defects under the growth prevention film 150 is blocked, resulting in an overall improvement in crystallinity. In other words, the growth prevention film 150 enables ELOG (Epitaxially Lateral Overgrowth) as in the group III nitride semiconductor laminate shown in FIG. 1, and also serves to block defects 180 occurring below.

Figure 4 is a diagram showing an example of a Group III nitride semiconductor light emitting device presented in U.S. Patent Publication No. 2003-0057444. The Group III nitride semiconductor light emitting device is a sapphire substrate 100, n grown on the sapphire substrate 100. It includes a type III nitride semiconductor layer 300, an active layer 400 grown on the n-type group III nitride semiconductor layer 300, and a p-type group III nitride semiconductor layer 500 grown on the active layer 400. Protrusions 110 are formed on the sapphire substrate 100, and the protrusions 110 improve the crystal quality of the group III nitride semiconductor layers (300, 400, 500) grown on the sapphire substrate 100, and the active layer (400) ) functions as a scattering surface that improves the efficiency of emitting light generated from the light emitting device to the outside. The sapphire substrate 100 on which the protrusions 110 are formed in this way is called a patterned sapphire substrate (PSS).

Figure 5 is a diagram showing an example of a Group III nitride semiconductor light emitting device presented in U.S. Patent Publication No. 2005-082546. The Group III nitride semiconductor light emitting device includes a sapphire substrate 101 on which protrusions 111 are formed and a Group III nitride. Includes a semiconductor layer 301. Unlike the example shown in FIG. 4, a protrusion 111 with a round cross-section is presented, which means that when using the protrusion 110 as shown in FIG. 4, the bottom surface of the protrusion 110 (protrusion 110 is formed Epi-growth occurs on both the concave-convex surface (corresponding to a concave part) and the upper surface of the protrusion 110, and thus a crystal defect, a threading dislocation, occurs on both the bottom surface and the upper surface. The protrusion 111 has a round cross-section. ) has the advantage of suppressing epitaxial growth on the upper surface of the protrusion 111 and suppressing the occurrence of penetration dislocations.

Figure 6 is a diagram showing an example of a Group III nitride semiconductor light emitting device presented in U.S. Patent Publication No. 2011-0042711. The Group III nitride semiconductor light emitting device 10 is disposed on a sapphire substrate 11 and a sapphire substrate 11. An n-type group III nitride semiconductor region 12a is grown, an active region 12b is grown on the n-type group III nitride semiconductor region 12a, and a p-type group III nitride semiconductor region 12c is grown on the active region 12b. Includes. Likewise, the sapphire substrate 110 is provided with protrusions 13. However, the protrusion 13 has a pointed cross section. By providing the protrusion 13 in a sharp shape, the upper part of the protrusion 13 has a point or line shape (if the protrusion 13 has a cone shape, it becomes a point, and if the protrusion 13 has a sharp stripe shape, it becomes a line. .) to suppress the formation of penetration dislocations at the top, while suppressing epi growth on the side connecting the top and bottom surfaces of the protrusion 13, thereby suppressing the generation of penetration dislocations on the side of the protrusion 13. do.

FIG. 7 is a diagram illustrating an example of a Group III nitride semiconductor stack presented in U.S. Patent Publication No. 10,361,339. The Group III nitride semiconductor stack includes a sapphire substrate 10, a buffer region 20, and a Group III nitride semiconductor region. (35), and shows that even with the protrusion of the form shown in FIG. 6, the upper part of the protrusion still forms the through dislocation (35).

Figures 26 and 27 are diagrams showing an example of a Group III nitride semiconductor stack or device presented in U.S. Patent Publication No. 9,324,844, which is a non-luminous Group III nitride semiconductor stack or device that is a vertically structured junction field effect transistor. (1000; Vertical Juction Field Effect Transistor; JFET) is presented. The non-light-emitting group III nitride semiconductor device 1000 includes a drain region 102, a drift region 103, a gate region 104, a source region 105, a drain electrode 106, a gate electrode 107, and a source electrode ( 108). FIG. 26 shows the off state, which is the default mode, and the depletion region 109 overlaps the position 120 within the channel 121 (see FIG. 27) to prevent current from flowing. Figure 27 shows the on state, and when voltages (V _D , V _S ) are applied to the gate electrode 107 and the source electrode 108, the gate voltage (V _D ) reduces the size of the depletion region 109. A channel 108 through which current can flow is provided to turn on the vertically structured JFET 1000, and the depletion region 109 is separated so that current flows from the drain region 102 to the drift region 103 and the channel region 121. ) can flow in the vertical direction 122 to the source area 106.

Figure 41 is a diagram showing an example of a non-light-emitting Group III nitride semiconductor laminate or device presented in U.S. Patent Publication No. 7,388,236, and the Group III nitride semiconductor device (e.g., AlGaN/GaN based HEMT) is shown in Figure 1. Like the device, a growth substrate (11; e.g., sapphire substrate, SiC substrate), a buffer layer (12; e.g., Al _x Ga _1-x N (0≤x≤1) buffer layer), and a channel layer (20; e.g., GaN channel layer) ), 2DEG (22; two-dimensional electron gas) (22), barrier layer (18; e.g., AlGaN barrier layer), insulating layer (24; e.g., SiN insulating layer), drain electrode (14), gate electrode (16) ) and a source electrode 17, and a gate field plate 25 is additionally provided on the gate electrode 16. Meanwhile, by providing a group III nitride layer (26; e.g., p-type GaN) of different conductivity between the gate electrode 16 and the barrier layer 17, D-mode (depletion-mode) AlGaN/GaN HEMT (gate voltage E-mode (Enhancement-mode) HEMT (a device in a turn-off state, i.e., normally-off state, when the gate voltage is not applied) can be implemented. The gate field plate 25 is such that when high electrical energy (high voltage, high frequency) is applied (or injected) through the gate electrode 16, a large electric field is concentrated around the gate electrode 16 and is applied to a portion of the group III nitride semiconductor device. Electrical shock can have a negative impact on the lifespan and reliability of the device. To prevent this, the shape of the electrode plate extending from the gate electrode 16 is designed to disperse the concentrated electric field to protect the device.

This is described at the end of the ‘specific details for carrying out the invention’.

Here, a general summary of the disclosure is provided, and this should not be construed as limiting the scope of the disclosure (This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all of its features).

According to one aspect of the present disclosure, a method of manufacturing a non-emissive Group III nitride semiconductor laminate includes preparing a growth substrate containing silicon (Si); Forming a plurality of protrusions on a growth substrate; Growing a first buffer layer to cover a plurality of protrusions on a growth substrate; forming a plurality of growth prevention films on the first buffer layer; Growing a second buffer layer from the first buffer layer exposed through the growth prevention film; And, a method of manufacturing a non-emissive Group III nitride semiconductor laminate is provided, including the step of forming a non-emissive Group III nitride semiconductor laminate on the second buffer layer.

According to another aspect of the present disclosure, there is provided a method for manufacturing a non-luminescent Group III nitride semiconductor stack, comprising: preparing a growth substrate; Forming a plurality of protrusions on a growth substrate; Growing a first buffer layer to cover a plurality of protrusions on a growth substrate; forming a plurality of growth inhibition films on the first buffer layer; growing a second buffer layer from the first buffer layer exposed from the plurality of growth inhibition films; And, a method of manufacturing a non-emissive Group III nitride semiconductor laminate is provided, including the step of forming a non-emissive Group III nitride semiconductor laminate on the second buffer layer.

According to another aspect of the present disclosure, there is provided a method for manufacturing a non-luminescent Group III nitride semiconductor stack, comprising: preparing a growth substrate; Growing a first buffer layer on a growth substrate; Forming a plurality of protrusions made of a first buffer layer on a first buffer layer; growing a second buffer layer on the first buffer layer; forming a non-emissive group III nitride semiconductor laminate on the second buffer layer; And, prior to growing the second buffer layer, forming a material layer that slows or prevents the growth of the second buffer layer on the plurality of protrusions; a method of manufacturing a non-light-emitting group III nitride semiconductor laminate comprising: provided.

According to another aspect of the present disclosure, there is provided a non-luminescent Group III nitride semiconductor stack, comprising: sequentially stacked drain regions; drift area; and gate area; a support substrate electrically connected to the drain region; A gate electrode electrically connected to the gate area; a source electrode electrically connected to a channel formed by the drift region exposed through the gate region; A passivation layer covering the entire laminate where the gate electrode and the source electrode are located and having a plurality of openings; a gate electrode for bonding electrically connected to the gate electrode through one of the plurality of openings; In addition, a non-light-emitting group III nitride semiconductor laminate is provided, including a bonding source electrode electrically connected to the source electrode through another one of the plurality of openings.

According to another aspect of the present disclosure, there is provided a method of manufacturing a non-emissive Group III nitride semiconductor stack, comprising: forming a non-emissive Group III nitride semiconductor stack on a growth substrate; Attaching a temporary substrate to the side of the laminate facing the growth substrate; removing the growth substrate; Forming a multilayer thin film including an electrically insulating ceramic layer and a metal layer in the order of the ceramic layer and the metal layer on the side of the laminate from which the growth substrate has been removed; Attaching a support substrate to the multilayer thin film; And, a method of manufacturing a non-emissive Group III nitride semiconductor laminate is provided, including the step of removing the temporary substrate.

According to another aspect of the present disclosure, there is provided a laminate for a non-emissive group III nitride semiconductor device, comprising: a sequentially stacked support substrate; A multilayer thin film composed of an electrically insulating ceramic layer and a metal layer; A non-emitting group III nitride semiconductor region consisting of a buffer layer, a channel layer, and a barrier layer; A gate electrode, a source electrode, and a drain electrode electrically connected to a non-luminescent group III nitride semiconductor region; A passivation layer covering the non-light-emitting group III nitride semiconductor region where the source electrode, drain electrode, and gate electrode are located, and opening the source electrode, drain electrode, and gate electrode to enable electrical connection to the outside; In addition, a non-light-emitting group III nitride semiconductor laminate is provided, including a field plate provided on the passivation layer to be electrically connected to one of the source electrode and the gate electrode.

According to another aspect of the present disclosure, a method of manufacturing a non-luminescent Group III nitride semiconductor stack includes forming a non-luminescent Group III nitride semiconductor stack on a non-conductive growth substrate. step; Attaching a temporary substrate to the side of the laminate facing the growth substrate; reducing the thickness of the growth substrate; Attaching a support substrate to the growth substrate of reduced thickness; And, a method of manufacturing a non-emissive Group III nitride semiconductor laminate is provided, including the step of removing the temporary substrate.

This is described at the end of the ‘specific details for carrying out the invention’.

1 is a diagram showing an example of a Group III nitride semiconductor device presented in U.S. Patent Publication No. 7,230,284;
2 is a view showing an example of a group III nitride semiconductor laminate presented in U.S. Patent Publication No. 2005-0156175;
3 is a view showing another example of a group III nitride semiconductor laminate presented in U.S. Patent Publication No. 2005-0156175;
Figure 4 is a diagram showing an example of a group III nitride semiconductor light emitting device presented in U.S. Patent Publication No. 2003-0057444;
Figure 5 is a diagram showing an example of a group III nitride semiconductor light emitting device presented in U.S. Patent Publication No. 2005-082546;
Figure 6 is a diagram showing an example of a group III nitride semiconductor light emitting device presented in U.S. Patent Publication No. 2011-0042711;
7 is a view showing an example of a Group III nitride semiconductor laminate presented in U.S. Patent Publication No. 10,361,339;
8 is a diagram showing an example of a Group III nitride semiconductor laminate or device according to the present disclosure;
9 is a diagram showing an example of the arrangement relationship between protrusions and a growth prevention film according to the present disclosure;
10 is a diagram illustrating an example of a method of forming protrusions on a growth substrate according to the present disclosure;
11 is a view showing another example of a method of forming protrusions on a growth substrate according to the present disclosure;
12 is a diagram showing another example of a method of forming protrusions on a growth substrate according to the present disclosure;
13 is a view showing another example of a method of forming protrusions on a growth substrate according to the present disclosure;
Figure 14 is a diagram showing a specific example of the method of forming the protrusion shown in Figure 12;
15 to 17 are diagrams showing another example of a method of forming a growth prevention film according to the present disclosure;
18 is a diagram showing another example of a method for forming a growth prevention film according to the present disclosure;
19 is a diagram showing another example of a method for forming a growth prevention film according to the present disclosure;
20 is a diagram showing another example of a method for forming a growth prevention film according to the present disclosure;
21 to 23 are diagrams showing another example of a method of forming a growth prevention film according to the present disclosure;
24 and 25 are diagrams showing another example of a Group III nitride semiconductor laminate or device according to the present disclosure.
26 and 27 are diagrams showing an example of a Group III nitride semiconductor laminate or device presented in U.S. Patent Publication No. 9,324,844;
28 to 37 are diagrams showing another example of a method for manufacturing a Group III nitride semiconductor laminate or device according to the present disclosure;
Figures 38 to 40 are diagrams illustrating an example of a support substrate used in the laminate shown in Figure 37;
41 is a diagram illustrating an example of a non-luminescent Group III nitride semiconductor laminate or device presented in U.S. Patent Publication No. 7,388,236;
Figures 42 to 46 are diagrams showing an example of a method for manufacturing the non-luminescent Group III nitride semiconductor laminate or device shown in Figure 41;
47 is a diagram showing another example of a method for manufacturing a non-luminescent Group III nitride semiconductor laminate or device according to the present disclosure;
48 is a diagram showing another example of a method for manufacturing a non-light-emitting group III nitride semiconductor laminate or device according to the present disclosure;
49 is a diagram showing another example of a method for manufacturing a non-luminescent Group III nitride semiconductor laminate or device according to the present disclosure;
50 is a diagram showing another example of a method for manufacturing a non-luminescent Group III nitride semiconductor laminate or device according to the present disclosure;
51 is a diagram showing another example of a method for manufacturing a non-light-emitting group III nitride semiconductor laminate or device according to the present disclosure.

Hereinafter, the present disclosure will now be described in detail with reference to the accompanying drawing(s).

Figure 8 is a diagram showing an example of a group III nitride semiconductor laminate or device according to the present disclosure, and a HEMT is shown as an example. The group III nitride semiconductor device includes a growth substrate (42; 6-inch or 8-inch Si substrate) with protrusions (41), a first buffer layer (43), and a growth prevention film (44; e.g., a dielectric material such as SiO ₂ or SiN _x ). ), second buffer layer 45, channel layer (46; e.g., 3㎛ thick GaN channel layer), 2DEG (47), interlayer (48; e.g., 10nm thick thin AlN layer, can be omitted), barrier layer (49; e.g. _, 10~50nm thick _Al It includes a cap layer, an n-layer or a p-layer (can be doped or omitted), a source electrode 51, a gate electrode 52, and a drain electrode 53.

In the case of the growth substrate 42 made of silicon (Si) (hereinafter referred to as Si growth substrate 42), since it is an opaque substrate, the protrusions used on the sapphire substrate (see FIGS. 4 to 7, these protrusions are primarily used as light emitting devices) (LED), it functions as a scatter (light scattering) to eliminate total internal reflection caused by the difference between the refractive index of the group III nitride semiconductor layer and the sapphire substrate, and secondarily, the protrusions form a growth prevention film in the ELOG (Figure 2). and (see FIG. 3), thereby improving the film quality. However, in the non-light-emitting group III nitride semiconductor device or laminate according to the present disclosure, protrusions (even on the Si growth substrate 42) are used to improve film quality. 41) is being adopted. In addition, as previously pointed out, even if the protrusion 41 is employed, the first buffer layer ( 43), crystal defects, specifically threading dislocations (54,55), occur, and it is not easy to achieve this when high quality, that is, TDD (Theading Dislocation Density) of 10 ⁷ /cm2 or less is required. In order to solve this problem, the present disclosure employs protrusions 41 on the Si growth substrate 42 and forms a growth prevention film 44 on the first buffer layer 43 to prevent the growth of the first buffer layer 43. By blocking a portion of the threading dislocations 54 and 55 and forming a group III nitride semiconductor laminate including the second buffer layer 45, the channel layer 46, and the barrier layer 48 thereon, the film quality of these It should have a TDD (Theading Dislocation Density) of 10 ⁷ /㎠ or less. In cases where high heat dissipation specifications are required for the device, the growth substrate 42 may be changed from a Si growth substrate to a SiC growth substrate, and thus a growth substrate containing Si (Si growth substrate, SiC growth substrate) may be used as the growth substrate 42. substrate) may be used. The protrusion 41 may have various shapes shown in FIGS. 4 to 7, and in order to minimize the penetration dislocation 54 on the upper or upper surface 41a of the protrusion 41, it is preferable that the longitudinal cross-section has a sharp shape. do. Depending on the structure and shape of the protrusion 41, the material constituting the protrusion 41 may be the same material as the growth substrate 42 (e.g., Si, SiC) or a material different from the growth substrate 42 (e.g., AlN, AlNO , AlGaN, or GaN).

FIG. 9 is a diagram illustrating an example of an arrangement relationship between a protrusion and a growth prevention film according to the present disclosure, and is a view of the growth substrate 42 or the protrusion 41 provided on the bottom surface 42a of the growth substrate 42 as viewed from above. , Conical protrusions 41 with a circular cross section are arranged at regular intervals in the diagonal direction, and a growth prevention film 44 located on the protrusions 41 is indicated by 44a, and is located on the bottom surface 42a. The growth prevention film 44 is indicated by 44b. The penetration dislocation 54 is blocked by the growth prevention film 44a, and a portion of the penetration dislocation 55 is blocked by the growth prevention film 44b. The size of the growth prevention film 44a is preferably smaller than the cross-sectional size of the protrusion 41 on the bottom surface 42a, because if it is too large, the area in which the second buffer layer 45 will grow will be excessively reduced.

The protrusion 41 may have a height of 0.1 to 2 ㎛, a width of 0.2 to 3.0 ㎛, and a gap of 0.1 to 1.0 ㎛, and its longitudinal cross section may be cone, square pyramid, dome, or trun. It may have a shape such as a truncated cone/pyramid.

Before growing the first buffer layer 43, the presence or absence of protrusions 41 is determined depending on the type (Si, SiC) of the growth substrate 42 (in the example shown in FIGS. 10 and 11, the protrusions 41 are formed first, and the protrusions 41 are formed later in the examples shown in FIGS. 12 and 13). A GaN, AlN, AlNO, or AlGaN seed layer (not shown; Seed Layer) having a thickness of about 20 nm is subjected to CVD (MOCVD, ALD). , MBE) or PVD (Sputter, PLD) methods. In particular, when forming an AlN seed layer on the Si growth substrate 42 using the CVD method, TMAl gas, which is a source of aluminum (Al), is supplied alone without supplying ammonia (NH ₃ ) gas, which is a source of nitrogen (N). It is also desirable to introduce a pre-seeding process. In order to grow the first buffer layer 43 made of a group III nitride semiconductor on the Si growth substrate 42, Si atomic debonding (Atomic Debonding & Desorption), and in a high-temperature nitrogen atmosphere, fine amorphous material particles are generated on the Si surface due to Si-N bonding, making it difficult to obtain a high-quality group III nitride semiconductor thin film. In order to effectively suppress this, introducing an aluminum (Al) pre-seeding process from several seconds to tens of seconds on the surface of the Si growth substrate 42 is advantageous for growing a group III nitride semiconductor thin film. After forming a seed layer (not shown) on the Si growth substrate 42, in a subsequent process, the first buffer layer 43 is formed as a GaN single layer, AlN single layer, or multilayer thin film with TMGa, TMAl and NH ₃ as source gases, and hydrogen. Using (H ₂ ) as a carrier gas, GaN to Ga-rich AlGaN is grown at a relatively high pressure (e.g., 250 mbar) in the actual growth temperature range of 800 to 1,100°C, while GaN is grown at a relatively low pressure (e.g., 50 mbar). ) can be grown from AlN to Al-rich AlGaN. In some cases, an AlGaN layer made by alloying GaN and AlN materials may be introduced as part of the first buffer layer 43. That is, the first buffer layer 43 may be made of GaN, GaN/AlGaN, AlN, AlN/AlGaN, AlN/AlGaN/GaN, or GaN/AlGaN/AlN, etc. on the growth substrate 42.

The thickness of the first buffer layer 43 must be higher than the height of the protrusion 41, and is at least equal to the height of the protrusion 41 in order to primarily shield and reduce penetration dislocations generated from the difference in lattice constant with the growth substrate 42. Alternatively, after thick growth, it is very important to make the growth rate in the side (horizontal direction) greater than the growth rate in the vertical direction to bend the penetration dislocations moving in the vertical direction parallel to the growth. The conditions for growing to the height of the protrusion 41 are preferably such that the growth rate in the vertical direction is greater than the growth rate in the lateral direction. Bowing may occur in the wafer state in which the first buffer layer 43 is grown on the growth substrate 42, which may interfere with accurate positioning of the growth prevention film 44. In cases where such bending is taken into consideration, the thickness of the first buffer layer 43 may be limited to less than 3㎛, and thus the height of the protrusion 41 may be limited to less than or equal to the thickness of the first buffer layer 43.

The growth prevention film 44 may be formed to a thickness of 1 nm to 1 μm, and its thickness is not particularly limited as long as it can suppress the growth of the second buffer layer 45. The shape and position of the growth prevention film 44 are in the shape of a strip mask using a dielectric such as SiO ₂ or SiN _x in the conventional ELOG or similar group III nitride growth process (e.g. Pendeo Epitaxy). Their positions are an area aligned with the center of the protrusion 41 where the growth prevention film 44a is located and an area aligned with the bottom surface of the growth substrate 42 between the protrusions 41 where the growth prevention film 44b is located. For example, the protrusion 41 has an isolation or island shape of various polygonal dimensions, such as circular, triangular, quadrangular, or hexagonal. The width and width of the growth prevention film 44a aligned with the protrusion 41 are first determined according to the shape and dimension of the protrusion 41, but are ultimately determined based on the location of the penetration dislocation formed during the growth of the first buffer layer 43 and It is desirable to set it considering distribution.

Like the first buffer layer 42, the second buffer layer 45 is a GaN single layer, AlN single layer, or multilayer thin film, and is grown at an actual growth temperature of 800 by using TMGa, TMAl, and NH ₃ as source gases and hydrogen (H ₂ ) as carrier gas. In the ~1100°C range, GaN to Ga-rich AlGaN can be grown at relatively high pressure (250 mbar), while AlN to Al-rich AlGaN can be grown at relatively low pressure (50 mbar). In some cases, an AlGaN layer made by alloying GaN and AlN materials may be introduced as part of the second buffer layer 45. That is, the second buffer layer 45 is composed of GaN, GaN/AlGaN, AlN, AlN/AlGaN, AlN/AlGaN/GaN, or GaN/AlGaN/AlN, etc. on the first buffer layer 43 and the growth prevention film 44. It can be. The thickness of the second buffer layer 45 is basically thicker than the thickness of the growth prevention film 44. Generally, the second buffer layer 45 can be grown to have a thickness of 1-5㎛. The penetration dislocations generated in the growth substrate 420 by the growth prevention film 44 are secondarily shielded and eliminated, and a group III nitride semiconductor with significantly less penetration dislocations is formed in the area of the first buffer layer 43 where the growth prevention film 44 is not formed. It is re-grown to form the second buffer layer 45 through ELOG or a similar growth process. It is possible to create a foundation for manufacturing a Group III nitride semiconductor laminate or a Group III nitride semiconductor device having a threading dislocation density (TDD) of 10 ⁷ /cm 2 or less, which is the goal of the present disclosure.

FIG. 10 is a diagram illustrating an example of a method of forming protrusions on a growth substrate according to the present disclosure. First, the growth substrate 42 is prepared, then the etch mask 60 is formed, and the growth substrate 42 itself is dry-processed. The protrusions 41 are formed through etching or wet etching. As an example, an etch mask 60 is formed on the (100), (110), or (111) surface of a Si growth substrate with SiO ₂ , _SiN Protrusions 41 can be formed by dimension.

FIG. 11 is a diagram illustrating another example of a method of forming protrusions on a growth substrate according to the present disclosure. In addition to the method shown in FIG. 10, a seed is formed to cover the entire surface of the growth substrate 42 provided with protrusions 41. Form a layer or seed layer (70; Seed Layer, AlN, AlNO, Al ₂ O ₃ , or Ga ₂ O ₃ ). The seed layer 70 may be formed by a PVD method and serves to assist the growth of the first buffer layer 43 grown by a CVD method (eg, MOCVD method).

FIG. 12 is a diagram showing another example of a method of forming protrusions on a growth substrate according to the present disclosure. Unlike the method shown in FIG. 11, the growth substrate 42 is prepared and then the protrusion base layer 71 is formed. Next, after forming the etch mask 60 on it, a portion of the protrusion base layer 71 is etched through etching to form the protrusion 41. Accordingly, the protrusions 41 are not made of a material constituting the growth substrate 42 but are made of a material constituting the protrusion base layer 71 formed on the growth substrate 42 . At this time, by etching the growth substrate 42 so that it is not exposed, the first buffer layer 43 is formed entirely on the protrusion base layer 71, which has the advantage of realizing high-quality film quality. The protruding base layer 71 may be composed of a seed layer 70 (see FIG. 11) and a group III nitride semiconductor layer (e.g., AlGaN and GaN) provided thereon, and the seed layer 70, as described above, It can be made of AlN, AlNO, Al ₂ O ₃ , or Ga ₂ O ₃ with a thickness of 200 nm or less by PVD or CVD method, and the group 3 nitride semiconductor layer is AlGaN or GaN with a thickness of 3 ㎛ or less by CVD method. It can be composed of sequential, multi-layered membranes, etc., and functions as a strain control layer. Etching of the protrusion base layer 71 to form the protrusions 41 may be performed until the seed layer 70 is exposed. As an example, 150 nm thick AlN (in some cases, a pre-seeding process with TMAl gas can be introduced) is deposited as a seed layer 70 on the top of the growth substrate 42 by CVD (MOCVD), and then a group III nitride semiconductor layer is formed. The film can be formed as a multi-layer consisting of two regions (first and second). The first layer may be composed of ₅₀₀ nm thick _Al It plays a mitigating role. The second layer may be composed of GaN with a thickness of 2 μm. Next, an etch mask 60 made of a material such as SiO ₂ or SiN _x is formed, and then the protrusions 41 are formed through dry etching.

FIG. 13 is a diagram showing another example of a method of forming protrusions on a growth substrate according to the present disclosure. Unlike the method shown in FIGS. 11 and 12, a seed layer 70 (see FIG. 11) is formed, but etching is performed. A method of forming without using a lift-off method is proposed. After preparing the growth substrate 42, a patterned photoresist film 80 (PR) is formed, and a protrusion base layer 71 (e.g., AlN layer, AlNO layer, Al ₂ having a thickness of 2㎛ or less) is formed through the PVD method. When the _photoresist film ₈₀ is removed, the protrusion base layer 71a formed on the photoresist film ₈₀ is also removed, leaving the remaining The protrusion base layer 71a is left on the growth substrate 42 in the form of protrusions 41, and here again the protrusion base layer 71 functions as a seed layer 70 (see FIG. 11) through the PVD method; e.g. An AlN layer, AlNO layer, Al ₂ O ₃ layer, or Ga ₂ O ₃ layer (represented by 71b) having a thickness of 1㎛ or less is formed so that the protrusion base layer 71b covers the entire growth substrate 42. , helps the growth of the first buffer layer 43. The thickness of the layers 71a and 71b constituting the protrusion base layer 71 is preferably set with design consideration in order to minimize wafer warpage due to stress of the growth substrate 42. For example, the thickness of the protrusion base layer 71a formed on the photoresist film 80 may be 500 nm, and the thickness of the protrusion base layer 71a may be 20 nm.

FIG. 14 is a diagram showing a specific example of the method of forming the protrusions shown in FIG. 12, in which a seed layer 70 (eg, AlN with a thickness of 200 nm or less) and a first layer 71c (eg, 500 nm thick) are placed on the growth substrate 42. _A protrusion base layer 71 made of _Al ) is presented. Here, the protrusion 41 is composed of only the second layer 71d (Case I), the first layer 71c - the second layer 71d (Case II), or the seed layer 70 - the first layer. (71c) - It may be composed of a second layer (71d) (Case III).

FIGS. 15 to 17 are diagrams illustrating another example of a method of forming a growth prevention film according to the present disclosure, and FIG. 15 shows a growth substrate 42 and a first buffer layer 43 grown thereon. . No protrusions 41 (see FIG. 8) are formed on the growth substrate 42, and the penetrating dislocation 55 penetrates the first buffer layer 43 over the entire sea surface 42a of the growth substrate 41. It is formed by FIG. 16 shows a growth substrate 42 on which protrusions 41 are formed and a first buffer layer 43 grown thereon. In the region A of the bottom surface 42a of the growth substrate 42 where the protrusions 41 are not formed, a through dislocation 55 is formed to penetrate the first buffer layer 43, as shown in FIG. 15. A threading dislocation 54 is also formed in the region B of the upper surface 41a of the protrusion 41 in a form that penetrates the first buffer layer 43. The penetration dislocation 54 occurs directly from the top or upper surface 41a or the first buffer layer 43 grown from the bottom surface 42a coalesces in the upper or upper surface 41a of the protrusion 41, that is, region B. (Coalescence) may occur, and by forming the upper or upper surface 41a of the protrusion 42 into a sharp shape, the penetration dislocation 54 occurring directly from the upper or upper surface 41a can be minimized. A curved threading dislocation 56 is formed in the region C between the regions A and B, and the threading dislocation 56 is a first buffer layer grown from the bottom surface 42a of the growth substrate 42. (43) is formed in a curved shape in the process of filling the space (concave portion) between the protrusions (42), and if the growth conditions are appropriately adjusted, most of them do not lead to the upper part of the first buffer layer (43). , it is not considered a crystal defect in the second buffer layer 45 (see FIG. 8) formed thereon. Meanwhile, a penetration dislocation may occur on the side of the protrusion 41 (i.e., the area of the protrusion 41 between the bottom surface 42a and the upper to upper surface 41a), as shown in FIGS. 5 to 7. This can be minimized by ensuring that the side surface of the protrusion 41 does not become a crystal plane (for example, in the case of the growth substrate 41 made of sapphire, the c plane is mainly used as the bottom surface 42a). That is, the side of the protrusion 41 has a circular cross-section, and the longitudinal cross-section is straight or curved upwardly convex, or roughening is applied to the side of the protrusion 41. It may hinder the growth of the first buffer layer 43. Therefore, when growing the first buffer layer 43 on the growth substrate 42 provided with the protrusions 41, the region C should be grown as a region with fewer crystal defects than the regions A and B. You can see that it is possible. Accordingly, the example shown in FIG. 17 is characterized in that the growth prevention film 44 is provided in the region A and region B, and the material constituting the growth substrate 42 is sapphire (Al) in addition to Si and SiC. ₂ O ₃ ), and can further be expanded to Sapphire, AlN, AlGaN, GaN, etc. having an HCP crystal structure, and the C-plane can be used as the growth surface, that is, the bottom surface 42a. The growth prevention film 44 located on the area (A; see Figure 16) blocks the penetration dislocation 55, and the growth prevention film 44 located on the area (B; see Figure 16) blocks the penetration dislocation 54. Since the threading dislocations 56 generated in the region (C; see FIG. 16) are bent and mostly do not penetrate the first buffer layer 43, the threading dislocations on the upper surface of the first buffer layer 43 are minimized, and thus the growth The penetration dislocations 57 and 58 in the second buffer layer 45 grown from the first buffer layer 43 exposed through the prevention film 44, that is, the corresponding first buffer layer 43 at zero C, are 10 ⁷ It can be minimized to have a TDD (Theading Dislocation Density) of /cm2 or less. The threading dislocation 57 is a threading dislocation that occurs from the exposed first buffer layer 43, and since the exposed first buffer layer 43 already has a film quality with minimized crystal defects and is grown therefrom, the number of crystal defects is greatly reduced. do. The penetration dislocation 58 is a crystal defect formed when the second buffer layer 45 grown from the exposed first buffer layer 43 coalesces on the growth prevention film 44, and is blocked by the growth prevention film 44. It has a greatly reduced number compared to the penetration dislocation (55). The protrusions 42 may have a micro scale with a width and height of 1 ㎛ or more (e.g., width - 2.5 ㎛, height - 1.6 ㎛, spacing between protrusions - 0.4 ㎛), and a nano scale with a width and height of less than 1 ㎛ (e.g. : Width-500nm, height-500nm, spacing between protrusions-50nm). The arrangement of the protrusions 42 may be in a stripe shape or a dot shape. In the case of a dot shape, six protrusions 41 may be arranged around one protrusion 41 at the vertices of a hexagon. (From the perspective of an array of dots of the protrusions 42, the protrusions 42 belonging to neighboring rows are not aligned with each other, but are arranged in a zigzag shape), and the first buffer layer 43 can be grown. It is desirable that the bottom surface 42a where growth occurs is minimized.

As described above, the growth prevention film 44 is formed of a dielectric (thickness: 1 to 1000 nm) such as SiO ₂ or SiN _x to suppress the second buffer layer 45 on the growth prevention film 44, or to suppress the second buffer layer 45 ) is made of a material capable of growing, but the second buffer layer 45 is made of a material with a slower growth rate (e.g. AlN, AlNO, AlO) than the material constituting the upper part of the first buffer layer 43 (e.g. GaN). (This is formed by depositing AlN, AlNO, or AlO to a predetermined thickness (e.g., 1 to 100 nm) with a PVD (Sputter, ALD, PLD) device and then patterning), forming a second layer on the growth prevention film 44. It can be configured to delay the growth of the buffer layer 45. When the second buffer layer 45 uses a growth prevention film 44 made of a material with a slow growth rate (e.g., AlN, AlNO, AlO), the exposed material is exposed as in the case of using the growth prevention film 44 made of a dielectric. 1 The second buffer layer 45 grown from the buffer layer 44 is developed on the growth prevention film 44, but since the second buffer layer 45 is also grown on the growth prevention film 44 (the growth prevention film 44 is the second buffer layer 45), Functions as a seed layer of the buffer layer 45), and is different from the generation mechanism of the penetration dislocation generated during the coalescence of the second buffer layer 45 on the dielectric (SiO2, SiNx) growth prevention film 44. shows different behavior.

FIG. 18 is a diagram illustrating another example of a method of forming a growth prevention film according to the present disclosure. Unlike the previous examples, the growth prevention film 44 is formed by the first buffer layer 43 itself. The growth prevention film 44 is formed in the form of a protrusion 44c in the same concept as the protrusion 41 formed on the growth substrate 42, and can be formed through a photolithography process and an etching process (plasma). The principle of reducing crystal defects in the second buffer layer 45 is the same as the previous examples. The threading dislocation 57 is a threading dislocation that exists in the second buffer layer 45 above the first buffer layer 43 where the protrusion 44c is not formed, and the threading dislocation 57 is a threading dislocation that exists in the second buffer layer 45 in this region (region C; see FIG. 16). Since the penetration dislocation 54 of 43) is bent and does not reach the upper part of the first buffer layer 43, the second buffer layer 45 in this area is grown from the first buffer layer 43 with good film quality to reduce penetration. It has a dislocation 57. The penetrating dislocation 58 is a penetrating dislocation that occurs on the upper to upper surface 44d of the protrusion 44c located at a position corresponding to the protrusion 41, and the penetrating dislocation 59 is a penetrating dislocation on the bottom surface. It is a penetration dislocation that occurs on the upper or upper surface 44d of the protrusion 44c located at a position corresponding to (42a), and the penetration dislocation 55 present in the first buffer layer 43 continues to the protrusion 44c. , the top to the upper surface 44d of the protrusion 44c is a flat surface with a narrow width or is sharp, so it is difficult for the penetration dislocation 55 to exist even in the second buffer layer 45. Some of the penetration dislocations 58 and 59 penetrate through. The second buffer layer 45, which is generated by the dislocation 54 and the through dislocation 55 and is partially grown on the first buffer layer 43 in which the protrusion 44c is not formed, is formed on the upper or upper surface of the protrusion 44c ( Coalescence occurs in 44d). Compared to the example shown in Figure 17, protrusions 44c are formed by a relatively easy process (photolithography and etching (plasma)) on a GaN or AlGaN single crystal (Epitaxy) with an HCP crystal structure. ) and growing a second buffer layer with the same material (GaN or AlGaN), so it has the advantage of minimizing threading dislocations and other crystal defects. Protrusions (44c) ) may have the same or similar dimensions as the protrusions 44a provided on the growth substrate 42, and are nanoscale (e.g., width-500nm high) with a width and height of less than 1㎛ rather than microscale with a width and height of 1㎛ or more. -500nm, spacing between protrusions -50nm) is desirable.

FIG. 19 is a diagram illustrating another example of a method of forming a growth prevention film according to the present disclosure. Unlike the example shown in FIG. 18, the protrusion 44c forming the growth prevention film 44 is located at the bottom of the growth substrate 42. It is formed in the first buffer layer 43 at a position corresponding to the surface 42a, that is, a position corresponding to the area A. The through dislocation 55 existing in the area A is connected to the protrusion 44c, but since the upper or upper surface 44d of the protrusion 44c is narrow or sharp, it disappears or only a portion of it is transferred to the second buffer layer 45. Subsequently, a through dislocation 59 is formed. Some of the threading dislocations 54 existing in the region B lead to the second buffer layer 45 to form a threading dislocation 58a, or in the process of the second buffer layer 45 filling the space between the protrusions 44c. It becomes a curved penetration dislocation 58b and disappears within the second buffer layer 45. Since there are not many threading dislocations in the region C, the occurrence of crystal defects in the second buffer layer 45 growing from the region C is minimized.

FIG. 20 is a diagram illustrating another example of a method of forming a growth prevention film according to the present disclosure. Unlike the example shown in FIG. 18, the protrusion 44c forming the growth prevention film 44 is located at the upper portion of the protrusion 41. It is formed in the first buffer layer 43 at a position corresponding to the upper surface 41a, that is, a position corresponding to area B. Some of the threading dislocations 55 existing in the area A are connected to the second buffer layer 45 and exist as threading dislocations 59b, but some of the threading dislocations 55 exist in the second buffer layer 45 in the space between the protrusions 44c. During the filling process, the through dislocation 59b becomes bent and disappears within the second buffer layer 45. The through dislocation 54 existing in the region B is connected to the protrusion 44c, but since the upper or upper surface 44d of the protrusion 44c is narrow or sharp, it disappears or only a portion of it is transferred to the second buffer layer 45. This continues to form a through dislocation 58a. Since there are not many threading dislocations in the region C, the occurrence of crystal defects in the second buffer layer 45 growing from the region C is minimized.

FIGS. 21 to 23 are diagrams showing another example of a method of forming a growth prevention film according to the present disclosure. In FIG. 21, in addition to the configuration shown in FIG. 18, AlN on the first buffer layer 43 on which the protrusions 44c are formed. , AlNO, or AlO is formed as a material layer 45a. The material layer 45a is made of the same material as the growth prevention film 44 shown in FIG. 17 and can be formed to a thickness of 1 to 100 nm using the same method (deposited using a PVD (Sputter, ALD, PLD) device). In FIG. 22, the material layer 45a is formed only in the area A, and in FIG. 23, the material layer 45a is formed to cover at least part of the protrusion 44c. The material layer 45a shown in FIGS. 21 to 23 can likewise be applied to the configuration shown in FIG. 19 and the configuration shown in FIG. 20. By introducing the material layer 45a, the penetration dislocation generated in the growth substrate 42 and exposed to the surface of the first buffer layer 43 is blocked and reduced, while the first buffer layer 43 grown in the two regions (A, B; see FIG. 16) is reduced. 2 The buffer layer 45 has a small difference in lattice constant with the material layer 45a made of AlN, AlNO, or AlO, thereby suppressing the generation of threading dislocations and minimizing the overall number of threading dislocations. Of course, a material layer 45a can be introduced in the example shown in FIG. 17. The material layer 45a may also function to repair damage that may occur in the first buffer layer 43 exposed in the process of forming the growth prevention film 44 and the protrusion 44c.

Considering all of the examples shown in FIGS. 17 to 23, the growth prevention film 44 may be referred to as a growth inhibition film 44 in that it prevents or slows the growth of the second buffer layer 45.

FIGS. 24 and 25 are diagrams showing another example of a group III nitride semiconductor laminate or device according to the present disclosure, in which the protrusion 41 of the form shown in FIG. 14 and the material layer 45a shown in FIG. 21 are combined. An example of the form is given. In terms of the example shown in FIG. 14, protrusions 41 (see FIGS. 16 to 23) made of a material (Al ₂ O ₃ ) forming the growth substrate 42 (e.g., a sapphire substrate) are formed on the growth substrate 42 (e.g., a sapphire substrate). Rather, the protruding bay layer 71 is formed through film formation, and then the protrusions 41 are formed by patterning the protrusion, and then the material layer 45a shown in FIG. 21 is formed on it, and at this time, the growth prevention film or growth prevention film is formed. The suppression layer 44 may be omitted, and in this case, the protrusion base layer 71 corresponds to the first buffer layer 43. In view of the example shown in FIG. 21, the protrusions 41 provided on the growth substrate 42 are omitted, the first buffer layer 43 is formed, and then the protrusions are formed as the growth inhibition layer 44 on the first buffer layer 43. (44c) is formed, and a material layer (45a) is formed thereon. A second buffer layer 45 and a non-light-emitting group III nitride semiconductor laminate or device (A) are stacked thereon. Of course, the material layer 45a can be partially formed in the form shown in FIGS. 22 and 23, and when the material layer 45a is formed in the form shown in FIG. 23, the material layer ( 45a) is not an Al-containing material such as AlN, AlNO, or AlO, which slows down the growth rate of the second buffer layer 45, but is SiO ₂ , SiN _x , which is a material that prevents the growth of the second buffer layer 45 on the protrusion 41 Of course, it can be composed of a dielectric material such as . By using this structure, threading dislocations can be reduced, as described in connection with FIGS. 21 to 23, while, as shown in FIG. 25, support on the non-luminescent Group III nitride semiconductor laminate side of the device (A) After providing the substrate S, when removing the growth substrate 42 through a process such as LLO (Laser Lift-Off), if the protrusions 41 are made of the same material as the growth substrate 42, Compared to this, it has the advantage of being able to easily separate the growth substrate 42 from the non-light-emitting group III nitride semiconductor stack or the device (A) side. When manufacturing a non-light emitting device with vertical current flow using a group III nitride semiconductor, optical, thermal and mechanical damage is caused by irradiating a short wavelength & higher optical flux laser beam to the sapphire growth substrate 42. It is important to improve the performance (particularly breakdown voltage) and reliability of non-light-emitting devices (e.g. transistors or diodes) with vertical current flow through a process of separation and removal without damage (LLO process) and a subsequent wafer bonding process. It is required, in the case where the sapphire growth substrate 42 has protrusions 41 made of a material (Al ₂ O ₃ ) constituting the growth substrate 42, after forming the non-luminescent group III nitride semiconductor laminate (A). In the LLO process, when a short-wavelength, high-density laser beam is irradiated and separated from the backplane of the sapphire growth substrate 42, a large amount of scattering of the laser beam occurs at the boundary where the protrusions 41 are formed, resulting in the separation of the laser beam from the sapphire growth substrate 42. At the same time, it is difficult to separate the luminescent group III nitride semiconductor stack (A) due to a lack of light energy, and at the same time, the scattered laser beam reaches the non-luminescent group 3 nitride semiconductor stack (A), causing an unexpected side effect. ) becomes crazy. Therefore, in order to separate the non-light-emitting group III nitride semiconductor laminate (A) from the sapphire growth substrate 42 and then fabricate a high-quality group III nitride semiconductor non-light-emitting device with vertical current flow, the protrusion 41 is first formed. By forming it on the upper part of the buffer layer 43, it is possible to suppress crystal defects including threading dislocations and minimize damage in the subsequent device manufacturing process. The protrusion base layer 71 to the first buffer layer 43 may be formed with the same composition and growth conditions as in the previous examples, and after forming the seed layer, suppressing crystalline defects including threading dislocations and stress strain. To control , a material layer (GaN, AlN, AlGaN, SiNx) or a multilayer structure (Superlattice) made of these may be introduced.

FIGS. 28 to 37 are diagrams showing another example of a method of manufacturing a Group III nitride semiconductor stack or device according to the present disclosure, in which the Group III nitride semiconductor stack or device is fabricated in a vertical direction as shown in FIGS. 26 and 27. A vertical junction field effect transistor structure is exemplified.

First, as shown in FIG. 28, a buffer layer 82 is formed on the growth substrate 81. Of course, the method described in FIGS. 8 to 25 can be applied to the formation of the buffer layer 82. Compared to the devices shown in Figures 26 and 27, there is a difference in that a heterogeneous substrate (eg, Si substrate, Al ₂ O ₃ substrate) is used, rather than a GaN growth substrate. The buffer layer 82 is preferably made of undoped GaN (uGaN) with a TDD of low 10 ⁷ /cm2 or less. Since the thickness of the buffer layer 82 is aimed at minimizing crystal defects (penetration dislocations, vacancy, interstitial, substitutional), there is no limit as long as it is the thickness necessary to achieve this. The method and thickness described in FIGS. 8 to 25 are preferentially applied.

Next, as shown in FIG. 29, a drain region 83 and a drift region 84 are formed. The drain region 83 is a region in contact with the drain electrode, and may be made of, for example, n ⁺ GaN with N _D (effective electron carrier density) of low 10 ¹⁸ /cm3 or more, n ⁺ (Al)GaN, n ^{+ + It can also be made of (} Al)GaN, Superlattice (AlGaN/GaN, AlInN/GaN, GaInN/GaN), etc. The thickness of the drain region 83 is important in terms of the thickness and doping concentration required to form the ohmic contact electrode, and for example, a thickness of 1 nm to 100 nm may be applied.

The drift region 84 generally has a lower effective electron carrier density than the N _D of the drain region 83, and can increase as its thickness increases, for example, N _D of low 10 ¹⁶ /cm3 or less, Preferably, it may be made of n ^- GaN having N _D in the range of 2x10 ¹⁴ /cm3 to 2x0 ¹⁶ /cm3. The thickness can range from 3㎛ to 20㎛, and the thicker it is, the lower the crystal defects, and the critical voltage at which the device is destroyed by improving crystallinity and distributing and relieving externally applied electrical stress, that is, breakdown voltage. It is known to be able to dramatically improve (Breakdown/Blocking Voltage).

Next, as shown in FIG. 30, an etch mask 91 (e.g., PR, metal, and/or oxide (e.g., SiO ₂ , etc.)) is formed over the drift region 84, and etched (e.g., dry etching and / or wet etching) to remove a portion of the drift area 84 to form a channel 85. The remaining etch mask 91 is removed. The height of the channel 85, which is a passage for the movement of electron carriers with charge (electrical mass), ranges from 100 nm to 1000 nm, preferably around 500 nm, and the cross-sectional width is usually 10 nm or less. The preferred shape is rectangular, but square and circular shapes are also possible.

Next, as shown in FIG. 31, the gate region 86 is formed through regrowth. In order to form the source electrode, the gate area 86 on the upper side of the channel 85 is removed to expose the drift area 84 forming the channel 85. For example, the gate region 86 may be made of p GaN, p ⁺ (Al, In) GaN, p ⁺⁺ (Al, In) GaN, etc. The conductivity of the gate region 86 and the drift region 84 may change, but this is not common when using heterogeneous substrates. Here, n ^- is N _D ≤ 2x0 ¹⁶ /cm, n,p is 2x0 ¹⁶ /cm ≤ N _D ,N _A ≤ 2x0 ¹⁸ /cm, n ⁺ ,p ⁺ is 2x0 ¹⁸ /cm ≤ N _D ,N _A ≤ 2x0 ¹⁹ /㎤, n ⁺⁺ ,p ⁺⁺ is defined as 2x0 ¹⁹ /㎤ ≤ N _D ,N _A. Typically, the planarization process to alleviate thin film steps involves coating and curing a liquid photoresist (PR) material and then using a dry etch process to form a protruding gate area (86) along with the coated PR material. ) portions are sequentially etched until the drift area 84 of the channel 85 is exposed.

Next, as shown in FIG. 32, the source electrode 87 and the gate electrode 88 are formed. The source electrode 87 is formed to make ohmic contact with the drain region 84, and the gate electrode 88 is formed to make ohmic or Schottky contact with the gate region 86. The source electrode 87 may be formed of at least two layers of Cr, Ti, Al, V, W, Re, TiN, CrN, Ni, Pt, and Au materials, for example, Cr/W/Pt/Au or It may consist of 4 or 5 layers, such as Ti/Cr/W/Pt/Au. The gate electrode 88 may be formed of at least two layers of Pd, Ni, Pt, Ru, Rh, Cr, Ti, TiN, NiO, RuO ₂ , and Au materials, for example, Pd/Ni/Pt/ It consists of 4 or 5 layers, such as Au or Cr/Ni/Pt/W/Au.

Next, as shown in FIG. 33, a passivation layer 89 serving as a protective film is formed to cover the entire upper surface of the device where the source electrode 87 and the gate electrode 88 are located, and then the temporary substrate 92 ) is attached using the bonding layer (93). Preferably, a sacrificial layer 94 is provided between the temporary substrate 92 and the bonding layer 93 to later separate the temporary substrate 92. The bonding layer 93 may be provided on both sides or one side. The temporary substrate 92 is preferably made of the same material as the growth substrate 81. For example, when the growth substrate 81 is a sapphire substrate, the temporary substrate 92 may also be made of sapphire. Details of this technology are presented in International Patent Publication Nos. WO2020/175971 and WO2021/112648.

Next, as shown in FIG. 34, the growth substrate 81 is removed (e.g., after the LLO process, the buffer layer 82 is removed along with the residue generated during the removal process of the growth substrate 81 (e.g. : dry etching and/or wet etching) to expose the drain region 83.

Next, as shown in FIG. 35, the growth substrate 81 and the buffer layer 82 are removed to form a drain electrode 95 to make ohmic contact with the exposed drain region 83. In the exposed drain area 83, a surface texture can be formed in the process of removing the buffer layer 82 to expand the bonding area with the drain electrode 95, and active gas plasma treatment can be performed. It is also possible to do so. Drain electrode 95 is formed over the entire exposed drain region 83. The drain electrode 95 may be formed of the same or similar material as the source electrode 87, and may be made of at least two layers of Cr, Ti, Al, V, W, Re, TiN, CrN, Ni, Pt, and Au materials. It can be formed and composed of four or five layers, for example, Cr/W/Pt/Au or Ti/Cr/W/Pt/Au.

Next, as shown in FIG. 36, the support substrate 97 is attached to the drain electrode 95 through the bonding layer 96. The bonding layer 96 may be provided on both sides or one side. The support substrate 97 may be made of composite such as ceramic materials (e.g. Sapphire, AlN, Si), MC (Cu/Mo/Cu, u/MoCu/Cu), and CIC (Cu/Invar/Cu). A material having a difference in coefficient of thermal expansion between the temporary substrate 92 and that of the temporary substrate 92 of less than ±5ppm is preferred. For example, if the temporary substrate 92 is a sapphire substrate, it may be made of sapphire. However, when the support substrate 97 is an insulating material, a vertical JFET cannot be implemented, so it is necessary to provide thermal and electrical paths in the support substrate 97, which will be described later. In addition to forming the support substrate 97 using a wafer bonding method, it is possible to form a thick film of a highly heat-dissipating electrically conductive metallic material (eg, Cu, MoCu) using a high-speed PVD deposition machine, or to use plating. Next, a laser is irradiated to the sacrificial layer 94 to separate the temporary substrate 92, and the bonding layer 93 is removed to expose the passivation layer 89.

Next, as shown in FIG. 37, an opening 98 is formed in the passivation layer 89, and a source electrode 99S for bonding and a gate electrode 99G for bonding are formed through deposition. If necessary, a drain electrode 99D for bonding is formed on the support substrate 97 through vapor deposition. Prior to the process of forming the bonding electrode 99D on the support substrate 97, a process of reducing the thickness of the support substrate 97 through a method such as polishing may be added, and through these processes, according to the present disclosure. As an example of a non-luminescent group III nitride stack or device, a vertically structured JFET can be completed.

FIGS. 38 to 40 are diagrams illustrating an example of a support substrate used in the laminate shown in FIG. 37. As shown in FIG. 38, the support substrate 97 (e.g., sapphire, AlN, Si substrate) is A plurality of trenches or vias 97T are provided on the upper surface, and the trenches or vias 97T are filled with a conductive material 97C. The conductive material 97C serves as a thermal and electrical path when the support substrate 97 is made of an insulating material, and can serve as an improved thermal and/or electrical path even when the support substrate 97 is made of a conductive material. The bonding layer or upper support substrate layer 96 may be formed separately or as part of the process of forming the conductive material 97C. Various methods (plating, wire bonding, press fitting, insert, etc.) of forming a trench or via (97T) and filling it with a conductive material (97C) are presented in International Patent Publication Nos. WO2020/262957 and WO2018/106070. FIG. 39 shows a state in which the support substrate 97 is polished and the conductive material 97C is exposed through the rear surface, as shown in FIG. 37 . Through this, the conductive material 97C can serve as a thermal and electrical path in the support substrate 97. FIG. 40 shows a state in which a drain electrode 99D for bonding is formed on the exposed conductive material 97C as shown in FIG. 37.

FIGS. 42 to 46 are diagrams showing an example of a method of manufacturing the non-light-emitting group III nitride semiconductor laminate or device shown in FIG. 41. First, as shown in FIG. 42, a growth substrate 42 (e.g., sapphire) is formed. substrate, Si substrate), a seed layer (423; e.g., AlN), a buffer layer 435, a channel layer (46; e.g., GaN with a thickness of 2 μm), and a barrier layer (49; e.g., AlGaN within 20 nm) in order. It is formed by As shown in FIG. 8, of course, the interlayer 48 and the cap layer 50 may be provided, and as shown in FIG. 41, the group III nitride layer 26 (e.g., p-type GaN within 20 nm) ) can of course be provided. Here, HEMT is exemplified, but of course it can be extended to non-luminescent group III nitride devices. Preferably, the buffer layer 435 can be formed by applying the method described in FIGS. 8 to 25. Next, the barrier layer 49 and the channel layer 46 are mesa-etched to expose the buffer layer 435, and then the source electrode 51 and the drain electrode 53 are formed on the upper surface of the barrier layer 49. form Here, the source electrode 51 and the drain electrode 53 can also be formed directly on the upper surface of the buffer layer 435 or the channel layer 46 exposed to air (not shown).

Next, as shown in FIG. 43, a gate electrode 52 is formed, and an insulating layer or passivation layer 61 that functions as a protective film is formed to cover the entire upper surface of the device. If necessary, steps such as forming necessary openings in the passivation layer 61 to form the field plate 51F are performed. In FIG. 42, a field plate 51F is formed on the source electrode 51, but as shown in FIG. 41, the gate electrode 52 may also be provided with a field plate 26, and the drain electrode 53 Of course, it can also be provided. Of course, the order of forming the electrodes 51, 52, and 53 can be changed.

Next, as shown in FIG. 44, the temporary substrate 92 with the sacrificial layer 94 is attached to the group III nitride semiconductor laminate through the adhesive layer 93, similar to that described in FIG. 33. At this time, the passivation layer 61 functions the same as the passivation layer 89 in FIG. 33. Organic adhesives such as SOG, BCB, and _FO In this case, a material containing metal (Sn, In, Zn, Au, Ag, Cu, Pd, Ni) is preferred as the adhesive layer 93. In this case, the gate electrode 52 and/or the field plate 51F The forming process is performed after bonding the support substrates 97 and 97a.

Next, as shown in FIG. 45, the growth substrate 42 is removed (e.g., LLO process for a sapphire substrate, CLO process for a Si substrate), similar to that shown in FIG. 34, and the growth substrate ( A portion of the buffer layer 435 is removed (e.g., dry etching and/or wet etching) along with residues generated during the removal process of 42) to expose the buffer layer 435 (e.g., undoped GaN (unGaN)). Preferably, dry etching is performed until a portion of the N-polar uGaN surface is exposed, and a rough surface or surface texture 435a is formed through surface texturing to strengthen adhesion. It is also possible to perform active gas plasma treatment. Next, in order to prevent insulation breakdown and enhance heat dissipation, a multilayer thin film 62 composed of an electrically insulating ceramic layer and a metal layer is formed. The multilayer thin film 62 consists of at least one (ceramic/metal) pair in the buffer layer 435, and can function to buffer stress by repeatedly forming n pairs. The electrically insulating ceramic layer may be made of, for example, AlN _, BN, Diamond, _SiN , CuW, etc. Specifically, it may be made of N-polar GaN (buffer layer)/AlN/Pt, N-polar GaN (buffer layer)/AlN/TiW, N-polar GaN (buffer layer)/SiNx/Pt, etc. Next, the support substrates 97 and 97a are attached to the multilayer thin film 62 through the bonding layer 96, as in FIG. 36. The bonding layer 96 may be provided on both sides or one side. The support substrates 97,97a may be made of ceramic materials (e.g. Sapphire, AlN, Si), MC (Cu/Mo/Cu, Cu/MoCu/Cu), Cu/MoCu/Cu, CIC (Cu/Invar/Cu), etc. It may be made of a composite, etc., and a material having a difference in thermal expansion coefficient of less than ±5 ppm with the temporary substrate 92 is preferable. For example, if the temporary substrate 92 is a sapphire substrate, it may be made of sapphire. In addition to forming the support substrate 97 using a wafer bonding method, forming a thick film of a highly heat-dissipating electrically conductive metallic material (e.g., Cu, MoCu) using a high-speed PVD deposition machine, or forming the support substrate 97a using plating. It is also possible to form

Next, as shown in FIG. 46, the temporary substrate 92 is removed (e.g., LLO process in the case of a sapphire substrate, CLO process in the case of a Si substrate), similar to that shown in FIG. 36. Next, the adhesive layer 93 is removed to complete the device. When the support substrate 97 is made of an insulating substrate (e.g., sapphire substrate, AlN substrate, Si substrate), a support substrate 97 with a thermal passage is used, as shown in FIGS. 37 to 40, and the thickness is reduced through polishing, and then a bonding pad 63 is formed thereto to complete the device.

FIG. 47 is a diagram showing another example of a method of manufacturing a non-light-emitting group III nitride semiconductor stack or device according to the present disclosure. Unlike the stack or device shown in FIG. 46, the growth substrate 42 is not completely removed. The difference is that it has a form in which some parts are left behind. After going through the process shown in Figure 43, the temporary substrate 92 is attached using the bonding layer 93, and then the growth substrate 42 is not completely removed, but is removed using an appropriate method (e.g., mechanical polishing, ultra-precision CMP). ) to reduce the thickness of the growth substrate 42. Since the heat dissipation characteristics of sapphire or Si, which are the materials that make up the growth substrate 42, are not good, the thickness of the growth substrate 42 is reduced to the minimum thickness (e.g., around 10 μm) required for the subsequent process. Next, as shown in FIG. 45, the support substrate 97 is attached to the growth substrate 42 of reduced thickness using the bonding layer 96. Preferably, the support substrate 97 can be made by the method shown in FIGS. 38 to 40. Next, as shown in FIG. 46, the thickness of the support substrate 97 is reduced through polishing to expose the conductive material 97C (see FIG. 38) to the lower surface of the support substrate 97 to effectively function as a thermal passage. . Next, the temporary substrate 92 is removed. Of course, if necessary, a sacrificial layer 94 can be provided as in Figure 46. Depending on the process, it is also possible to first remove the temporary substrate 92 as shown in FIG. 46.

FIG. 48 is a diagram showing another example of a method of manufacturing a non-light-emitting group III nitride semiconductor laminate or device according to the present disclosure. Unlike the laminate or device shown in FIG. 47, the support substrate 97 is made of a ceramic material ( Example: Wafer bonding is made of laminated composites such as Sapphire, AlN, Si, Diamond), MC (Cu/Mo/Cu, Cu/MoCu/Cu), Cu/MoCu/Cu, and CIC (Cu/Invar/Cu). There is a difference in that point. Preferably, a material having a difference in thermal expansion coefficient from the temporary substrate 92 of less than ±5 ppm is used.

FIG. 49 is a diagram showing another example of a method of manufacturing a non-light-emitting group III nitride semiconductor laminate or device according to the present disclosure. Unlike the laminate or device shown in FIGS. 47 and 48, the support substrate 97a is The difference is that it is formed as a thick film using a high-heat dissipation electrically conductive metallic material (e.g. Cu, MoCu) using a high-speed PVD deposition machine, or it is formed as a thick film using plating (e.g. Cu).

FIG. 50 is a diagram illustrating another example of a method for manufacturing a non-light-emitting Group III nitride semiconductor laminate or device according to the present disclosure. Unlike the laminate or device shown in FIGS. 47 to 49, a growth substrate of reduced thickness is used. The difference is that a trench or via 42T is formed at 42 (e.g., laser drilling), and a support substrate 97b is formed thereon. The trench or via (42T) is filled with a conductive material (97C). As described above, the process of filling the trench or via (42T) with the conductive material (97C) involves methods such as plating, wire bonding, press fitting, and insert (e.g., copper plating, copper deposition, wire bonding & stitching, Au stud bonding & Corning), and is presented in detail in International Patent Publication Nos. WO2020/262957 and WO2018/106070. In the example shown in Figure 50, the support substrate 72b can be formed continuously or discontinuously, and in the case of discontinuous formation (e.g., in the case of wire bonding & stitching, Au stud bonding & coining), additional plating or deposition is required. It is possible to form a continuous support substrate 72b.

Figure 51 is a diagram showing another example of a method of manufacturing a non-light-emitting group III nitride semiconductor stack or device according to the present disclosure. Unlike the stack or device shown in Figure 50, the trench or via (42T) is a nitride layer. The difference is that it extends to the phosphor buffer layer 423. These trenches or vias 42T can be formed by reducing the thickness of the growth substrate 42 to about 20-30㎛ and then dry etching. Of course, the buffer layer 423 can be formed so that it is not exposed. The conductive material 97C, that is, the thermal path continues through the growth substrate 42 to the buffer layer 423, which is a nitride layer, has the advantage of improving thermal characteristics. However, when the trench or via (42T) is formed deeply, it is not easy to form the conductive material (97C) through plating or deposition, and wire bonding & stitching and Au stud bonding & coining are useful to solve this problem. can be used Of course, one of the methods shown in FIGS. 47 to 49 can be added to the configuration shown in FIGS. 50 and 51. As shown in FIG. 46, there is an advantage of improving heat dissipation performance when the growth substrate 42 is completely removed, but during the process of removing the growth substrate 42 and forming a high heat dissipation support substrate, heat dissipation may occur due to thermo-mechanical shock or material diffusion. As this may have a negative impact on the long-term reliability of the device, by using a growth substrate 42 whose thickness is reduced to around 10㎛, the long-term reliability of the device can be guaranteed without significantly damaging radiation heat. Meanwhile, the long-term reliability of the device is further ensured by using a growth substrate 42 whose thickness is reduced to around 20 to 30㎛, and a thermal passage is formed through the conductive material 97C by forming a trench or via 42T. It is also possible to improve heat dissipation performance.

Hereinafter, various embodiments of the present disclosure will be described.

(1) A method of manufacturing a non-luminescent Group III nitride semiconductor laminate, comprising: preparing a growth substrate containing silicon (Si); Forming a plurality of protrusions on a growth substrate; Growing a first buffer layer to cover a plurality of protrusions on a growth substrate; forming a plurality of growth prevention films on the first buffer layer; Growing a second buffer layer from the first buffer layer exposed through the growth prevention film; And, forming a non-light-emitting Group III nitride semiconductor stack on the second buffer layer.

(2) A method of manufacturing a non-luminescent group III nitride semiconductor laminate in which, in the step of forming a growth prevention film, a plurality of growth prevention films are formed so as to be located on top of each protrusion and between protrusions.

(3) A method of manufacturing a non-luminescent Group III nitride semiconductor laminate in which the plurality of protrusions and the growth substrate are made of the same material.

(4) A method of manufacturing a non-luminescent group III nitride semiconductor laminate, wherein the growth substrate containing silicon (Si) is one of a Si growth substrate and a SiC growth substrate.

(5) A method of manufacturing a non-luminescent Group III nitride semiconductor laminate in which the plurality of protrusions and the growth substrate are different materials.

(6) prior to forming a plurality of protrusions, forming a protrusion base layer; manufacturing a non-light-emitting group III nitride semiconductor laminate, wherein the plurality of protrusions are formed by etching the protrusion base layer. method.

(7) A method of manufacturing a non-luminescent group III nitride semiconductor laminate, wherein the protrusion base layer is composed of a seed layer formed on a growth substrate and a group III nitride semiconductor layer formed on the seed layer.

(8) A method of manufacturing a non-luminescent group III nitride semiconductor laminate in which the group III nitride semiconductor layer of the protrusion base layer is exposed through etching.

(9) A method of manufacturing a non-luminescent group III nitride semiconductor laminate in which the seed layer of the protrusion base layer is exposed through etching.

(10) prior to forming the plurality of protrusions, forming a protrusion base layer; further comprising: a non-emissive group III nitride semiconductor laminate, wherein the plurality of protrusions are formed by lifting off the protrusion base layer. How to manufacture.

(11) forming a seed layer covering the lifted-off protrusion base layer and the lifted-off exposed growth substrate; a method of manufacturing a non-light-emitting group III nitride semiconductor laminate, further comprising:

(12) A method of manufacturing a non-luminescent Group III nitride semiconductor laminate, comprising: preparing a growth substrate; Forming a plurality of protrusions on a growth substrate; Growing a first buffer layer to cover a plurality of protrusions on a growth substrate; forming a plurality of growth inhibition films on the first buffer layer; growing a second buffer layer from the first buffer layer exposed from the plurality of growth inhibition films; And, forming a non-light-emitting Group III nitride semiconductor stack on the second buffer layer.

(13) A method of manufacturing a non-luminescent group III nitride semiconductor laminate, wherein in the step of forming a plurality of growth inhibition films, a plurality of growth inhibition films are formed so as to be located on top of each protrusion and between the protrusions.

(14) A method for manufacturing a non-luminescent Group III nitride semiconductor laminate wherein the plurality of protrusions and the growth substrate are made of the same material.

(15) A method for manufacturing a non-luminescent Group III nitride semiconductor laminate, wherein the plurality of growth inhibition films include a dielectric material.

(16) A method for manufacturing a non-luminescent group III nitride semiconductor laminate, wherein the plurality of growth inhibition films include a material from which a second buffer layer can be grown, but whose growth rate is slower than the growth rate of the first buffer layer from the first buffer layer. method.

(17) A method for manufacturing a non-luminescent Group III nitride semiconductor laminate, wherein the plurality of growth inhibition films include one of AlN, AlNO, and AlO.

(18) A method for manufacturing a non-luminescent Group III nitride semiconductor laminate, wherein the plurality of growth inhibition films are made of a material constituting the first buffer layer.

(19) Prior to growing the second buffer layer, forming a material layer that slows down the growth rate of the second buffer layer from the first buffer layer compared to the growth rate of the second buffer layer from the first buffer layer. Method for manufacturing a nitride semiconductor laminate.

(20) Prior to growing the second buffer layer, forming a material layer that slows down the growth rate of the second buffer layer from the first buffer layer than the growth rate of the second buffer layer from the first buffer layer; Method for manufacturing a nitride semiconductor laminate.

(21) A method for manufacturing a non-luminescent Group III nitride semiconductor laminate, wherein the plurality of growth inhibition films include one of AlN, AlNO, and AlO.

(22) A method of manufacturing a non-luminescent Group III nitride semiconductor laminate, comprising: preparing a growth substrate; Growing a first buffer layer on a growth substrate; Forming a plurality of protrusions made of a first buffer layer on a first buffer layer; growing a second buffer layer on the first buffer layer; Forming a non-emissive Group III nitride semiconductor laminate on the second buffer layer; And, prior to growing the second buffer layer, forming a material layer to slow or prevent the growth of the second buffer layer on the plurality of protrusions. A method of manufacturing a non-light-emitting group III nitride semiconductor laminate including.

(23) A method of manufacturing a non-luminescent group III nitride semiconductor laminate, wherein the material layer is made of a material that slows the growth of the second buffer layer, and is formed over the entire first buffer layer on which a plurality of protrusions are formed.

(24) A method for manufacturing a non-luminescent Group III nitride semiconductor laminate, wherein the first buffer layer consists of a seed layer formed on a growth substrate and a Group III nitride semiconductor layer formed on the seed layer.

(25) Separating the growth substrate from the non-luminescent Group III nitride semiconductor laminate side.

(26) A non-luminescent Group III nitride semiconductor stack, comprising: sequentially stacked drain regions; drift area; and gate area; a support substrate electrically connected to the drain region; A gate electrode electrically connected to the gate area; a source electrode electrically connected to a channel formed by the drift region exposed through the gate region; A passivation layer covering the entire laminate where the gate electrode and the source electrode are located and having a plurality of openings; a gate electrode for bonding electrically connected to the gate electrode through one of the plurality of openings; And, a source electrode for bonding electrically connected to the source electrode through another one of the plurality of openings; a non-light-emitting group III nitride semiconductor laminate including a.

(27) The support substrate is made of the same material as the growth substrate and has a plurality of thermal and electrical passages, and the laminate further includes a drain electrode for bonding provided below the support substrate. A non-light-emitting group III nitride semiconductor. Laminate.

(28) A non-luminescent group III nitride semiconductor laminate in which the support substrate is made of sapphire.

(29) A non-luminescent group III nitride semiconductor laminate in which the support substrate is made of AlN.

(30) A non-luminescent group III nitride semiconductor laminate wherein the support substrate is made of Si.

(31) A method of manufacturing a non-luminescent Group III nitride semiconductor stack, comprising: forming a non-luminescent Group III nitride semiconductor stack on a growth substrate; Attaching a temporary substrate to the side of the laminate facing the growth substrate; removing the growth substrate; Forming a multilayer thin film including an electrically insulating ceramic layer and a metal layer in the order of the ceramic layer and the metal layer on the side of the laminate from which the growth substrate has been removed; Attaching a support substrate to the multilayer thin film; And, removing the temporary substrate; A method of manufacturing a non-light-emitting group III nitride semiconductor laminate including.

(32) the support substrate has a thermal passage, reducing the thickness of the support substrate; and forming a bonding pad on the support substrate of reduced thickness.

(33) Forming at least one electrode in the laminate from which the temporary substrate is removed. A method of manufacturing a light-emitting group III nitride semiconductor laminate, further comprising:

(34) A laminate for a non-luminescent group III nitride semiconductor device, comprising: sequentially laminated support substrates; A multilayer thin film composed of an electrically insulating ceramic layer and a metal layer; A non-emitting group III nitride semiconductor region consisting of a buffer layer, a channel layer, and a barrier layer; A gate electrode, a source electrode, and a drain electrode electrically connected to a non-luminescent group III nitride semiconductor region; A passivation layer covering the non-light-emitting group III nitride semiconductor region where the source electrode, drain electrode, and gate electrode are located, and opening the source electrode, drain electrode, and gate electrode to enable electrical connection to the outside; And, a field plate provided on the passivation layer to be electrically connected to one of the source electrode and the gate electrode. A non-light-emitting group III nitride semiconductor laminate including a.

(35) A method of manufacturing a non-luminescent Group III nitride semiconductor laminate, comprising: forming a non-luminescent Group III nitride semiconductor laminate on a non-conductive growth substrate; Attaching a temporary substrate to the side of the laminate facing the growth substrate; reducing the thickness of the growth substrate; Attaching a support substrate to the growth substrate of reduced thickness; And, removing the temporary substrate; A method of manufacturing a non-light-emitting group III nitride semiconductor laminate including.

(36) the support substrate has a thermal passage, and prior to removing the temporary substrate, reducing the thickness of the support substrate to expose the thermal passage; manufacturing a non-luminescent group III nitride semiconductor laminate, further comprising: How to.

(37) A method of manufacturing a non-luminescent group III nitride semiconductor laminate, wherein the support substrate is attached to a growth substrate of reduced thickness through a bonding layer.

(38) A method of manufacturing a non-luminescent Group III nitride semiconductor laminate, further comprising forming a thermal passage in a growth substrate of reduced thickness.

(39) A method of manufacturing a non-luminescent Group III nitride semiconductor laminate, wherein the thermal passage is connected to the non-luminescent Group III nitride stack.

(40) A method for manufacturing a non-luminescent group III nitride semiconductor laminate, wherein the growth substrate is a sapphire substrate or a Si substrate.

According to a non-light-emitting group III nitride semiconductor stack or device according to the present disclosure, a stack or device having a TDD (Threading Dislocation Density) of 10 ⁷ /cm 2 or less can be implemented.

According to another non-light-emitting group III nitride semiconductor stack or device according to the present disclosure, a JFET with a new type of vertical structure can be implemented.

According to another non-light-emitting group III nitride semiconductor laminate or device according to the present disclosure, a vertically structured JFET having a TDD (Threading Dislocation Density) of 10 ⁷ /cm 2 or less can be implemented.

Protrusions 41, growth substrate 42, first buffer layer 43, growth prevention film 44, second buffer layer 45, channel layer 46, 2DEG 47, interlayer 48, barrier layer (49), cap layer 50, source electrode 51, gate electrode 52, drain electrode 53

Claims (6)

In a method of manufacturing a non-luminescent Group III nitride semiconductor laminate,
Forming a non-conductive, non-luminescent Group III nitride stack on a growth substrate;
Attaching a temporary substrate to the side of the laminate facing the growth substrate;
In order to improve the heat dissipation characteristics of the growth substrate, etching the growth substrate to reduce the thickness of the growth substrate;
Attaching a support substrate to the growth substrate of reduced thickness; and,
Removing the temporary substrate; comprising:
The growth substrate before and after the thickness is reduced is a single layer formed of one material,
The step of reducing the thickness of the growth substrate by etching the growth substrate involves manufacturing a non-emissive group III nitride semiconductor laminate that reduces the thickness of the growth substrate using a mechanical polishing (MP) or chemical-mechanical polishing (CMP) method. How to. In claim 1,
The support substrate has a thermal passage,
Prior to removing the temporary substrate, the method of manufacturing a non-emissive group III nitride semiconductor laminate further comprising: reducing the thickness of the support substrate to expose the thermal passage. In claim 1,
A method of manufacturing a non-luminescent group III nitride semiconductor laminate, wherein the support substrate is attached to a growth substrate of reduced thickness through a bonding layer. In claim 1,
A method of manufacturing a non-emissive Group III nitride semiconductor laminate, further comprising forming a thermal passage inside the growth substrate of reduced thickness. In claim 4,
A method of manufacturing a non-luminescent Group III nitride semiconductor laminate, wherein the thermal passage is connected to the non-luminescent Group III nitride stack. The method according to any one of claims 1 to 5,
A method of manufacturing a non-luminescent group III nitride semiconductor laminate, wherein the growth substrate is a sapphire substrate or a Si substrate.