KR101600783B1 - Method of fabricating light emitting diode with high efficiency - Google Patents

Abstract

A method of manufacturing a high-efficiency light emitting diode is provided. Forming a p-type gallium nitride layer having a plurality of holes on the active layer, forming a p-type gallium nitride layer on the side surface of the p-type gallium nitride layer, And forming a metal layer filling the inside of the hole in which the insulating region layer is formed, wherein the metal layer is in the form of a metal disk layer, or the metal disk layer and the magnetic layer are sequentially The light emitting diode may be formed in a stacked manner. Accordingly, the present invention provides a method of forming a p-type gallium nitride layer having a plurality of holes by forming an insulating region layer in the p-type gallium nitride layer, thereby suppressing the decrease in the thin film quality of the gallium nitride layer or the generation of leakage current . Further, by forming a metal disk layer inside the gallium nitride layer, internal quantum efficiency of the light emitting diode can be effectively increased through surface plasmon resonance. In addition, by forming a magnetic layer in the gallium nitride layer, it is possible to apply a non-uniform magnetic field in the light emitting diode, thereby increasing the light emitting recombination rate and improving the luminous efficiency.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of manufacturing a high-efficiency light-

The present invention relates to a method of manufacturing a light emitting diode, and more particularly, to a method of manufacturing a high efficiency light emitting diode using a surface plasmon and a magnetic field.

BACKGROUND ART Light emitting diodes (LEDs), which are widely used in mobile phones, LCD TV backlights, monitor LCDs, and lighting devices, are compound semiconductors having a pn junction structure. By recombination of charge carriers (electrons or holes) Emitting device that emits light. A gallium nitride-based compound semiconductor having a large energy bandgap of direct transition type is mainly used as a material of such a light emitting diode. The gallium nitride-based compound semiconductors having the above-described characteristics can obtain light of almost the propagation range according to the composition of the nitride, and thus have been attracting much attention as light emitting diode materials in the blue and ultraviolet region.

Various attempts have been made to increase the internal quantum efficiency in order to improve the efficiency of the gallium nitride-based light emitting diode. In particular, studies have been actively conducted to improve the radiative recombination rate of a light emitting diode using a surface plasmon generated by the metal nanoparticles by inserting metal nanoparticles into the light emitting diode. Surface plasmon refers to the collective charge efficiency of electrons occurring on the surface of metal particles, which refers to surface electromagnetic waves traveling along the boundary between metal and dielectric.

1 is a schematic view showing a structure of a light emitting diode in which metal nanoparticles are inserted into a conventional p-type gallium nitride layer. Referring to FIG. 1, internal quantum efficiency of a light emitting diode can be increased by using surface plasmon resonance between a surface plasmon generated by metal nanoparticles formed in the p-type gallium nitride layer and an active layer.

However, when the light emitting diode having such a structure is manufactured, the thin film quality of the gallium nitride is reduced and the light efficiency of the light emitting diode is lowered due to the process of regrowing the p-type gallium nitride layer formed with the metal nanoparticles. In addition, leakage current is generated in the light emitting diode due to the inserted metal nanoparticles, and light generated from the quantum well of the active layer is partially absorbed by the metal nanoparticles, thereby deteriorating the electrical characteristics of the light emitting diode.

On the other hand, as another method for increasing the internal quantum efficiency of the light emitting diode, research is being conducted to form a film-like magnetic layer on the semiconductor layer and apply a non-uniform magnetic field to the active layer. However, the magnetic field generated in the film form has a limitation on the intensity of the magnetic field, and improvement is required.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing a light emitting diode having a structure capable of effectively utilizing surface plasmon resonance and a magnetic field to improve internal quantum efficiency of a light emitting diode.

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming an n-type gallium nitride layer and an active layer sequentially on a substrate; forming a p-type gallium nitride layer having a plurality of holes on the active layer; forming an insulating region layer on side surfaces and bottom surfaces of a hole of a p-type gallium nitride layer; and forming a metal layer filling the inside of the hole in which the insulating region layer is formed, wherein the metal layer is in the form of a metal disk layer , A metal disk layer, and a magnetic layer are sequentially stacked on a substrate, and a manufacturing method of the high efficiency light emitting diode is provided.

In one embodiment, the step of forming a p-type gallium nitride layer having a plurality of holes on the active layer includes growing a p-type gallium nitride layer on the active layer, and growing the grown p- And forming a plurality of holes by etching.

In another embodiment, the step of forming a p-type gallium nitride layer having a plurality of holes on the active layer includes forming a p-type gallium nitride layer on the active layer, forming a plurality of holes Selectively growing a p-type gallium nitride layer on the p-type gallium nitride layer through a region where the mask layer is not formed, and removing the mask layer . ≪ / RTI >

The insulating region layer may be formed using at least one selected from the group consisting of SiO ₂ , Si ₃ N ₄ , TiO ₂ , and Al ₂ O ₃ .

The insulating region layer may be formed to a thickness of 10 nm to 20 nm.

The metal disk layer is formed using at least one selected from gold (Au), silver (Ag), platinum (Pt), aluminum (Al), copper (Cu), palladium .

The magnetic layer may be formed of at least one selected from the group consisting of Fe, Au, Ag, Pt, Co, Ni, Mn, Cr, And at least one magnetic material selected from the group consisting of elements.

The magnetic layer may be formed of a patterned structure, and the magnetic layer of the patterned structure may be formed using at least one magnetic material.

The present invention can suppress the formation of a metal layer in the gallium nitride layer and the formation of a thin film of the gallium nitride layer or a leakage current by forming an insulating region layer in the p-type gallium nitride layer having a plurality of holes .

Further, by forming a metal disk layer inside the gallium nitride layer, internal quantum efficiency of the light emitting diode can be effectively increased through surface plasmon resonance.

In addition, by forming the magnetic layer in the gallium nitride layer, it is possible to apply a non-uniform magnetic field in the light emitting diode, thereby increasing the light emitting recombination rate and improving the light emitting efficiency.

However, the effects of the present invention are not limited to those mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

1 is a schematic view showing a structure of a light emitting diode in which metal nanoparticles are inserted into a conventional p-type gallium nitride layer.
2A to 2E are cross-sectional views illustrating a method of manufacturing a high-efficiency light emitting diode according to an embodiment of the present invention.
FIGS. 3A to 3D are cross-sectional views illustrating a step of forming a p-type gallium nitride layer having a plurality of holes according to an embodiment of the present invention.
4A to 4C are cross-sectional views illustrating a method of manufacturing a high-efficiency light emitting diode according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. Rather, the intention is not to limit the invention to the particular forms disclosed, but rather, the invention includes all modifications, equivalents and substitutions that are consistent with the spirit of the invention as defined by the claims.

In the drawings, the thicknesses of the layers and regions may be exaggerated or reduced for clarity. Like reference numerals designate like elements throughout the specification.

A method of manufacturing a high-efficiency light emitting diode according to the present invention includes the steps of: 1) sequentially forming an n-type gallium nitride layer and an active layer on a substrate, 2) forming a p- , 3) forming an insulating region layer on side surfaces and bottom surfaces of the p-type gallium nitride layer, and 4) forming a metal layer filling the inside of the hole in which the insulating region layer is formed. Here, the metal layer may be a metal disk layer, or a metal disk layer and a magnetic layer may be sequentially stacked.

2A to 2E are cross-sectional views illustrating a method of manufacturing a high-efficiency light emitting diode according to an embodiment of the present invention.

Step 1) is a step of sequentially forming an n-type gallium nitride layer and an active layer on a substrate.

Referring to FIG. 2A, the substrate 100 may be a substrate for growing a semiconductor single crystal that can grow a gallium nitride-based semiconductor, and a known substrate may be used. The substrate 100 may be formed of a material such as, for example, sapphire, silicon, silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), gallium phosphide (GaP) ) Substrate. Preferably, the substrate 100 may use sapphire.

Before forming the n-type gallium nitride layer 210 on the substrate 100, an undoped gallium nitride layer 201, which is a non-doped gallium nitride layer, may be formed according to an embodiment. The undoped gallium nitride layer 201 relaxes defects such as dislocation or crack due to a difference in lattice constant and thermal expansion coefficient between the substrate 100 and the n-type gallium nitride layer 210 For example. The undoped gallium nitride layer 201 may be formed of a material of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) .

The n-type gallium nitride layer 210 may be formed on the undoped gallium nitride layer 201 formed on the substrate 100. The n-type gallium nitride layer 210 is a layer for providing electrons to the active layer 230, which will be described later. The n-type gallium nitride layer 210 is an n-type dopant-doped gallium nitride material (In _x Al _y Ga _1-xy N 1, 0? y? 1, 0? x + y? 1). The n-type dopant is formed by implanting, for example, Si, Ge, Se, Te, The n-type gallium nitride layer 210 may be formed to a thickness of, for example, 0.1 to 30 μm, but is not limited thereto.

The active layer 230 may be formed on the n-type gallium nitride layer 210. The active layer 230 is a layer in which electrons provided in the n-type gallium nitride layer 210 are recombined with holes provided in the p-type gallium nitride layer 250, which will be described later, and is generally represented by In _x Al _y Ga _1-xy N (0? X? 1, 0? Y? 1, 0? X + y? 1). The active layer 230 may be a multi-layered semiconductor thin film having a single quantum well structure or multiple quantum well structure (MQW) in which a well layer and a barrier layer are alternately stacked. Preferably, the active layer 230 may have a multiple quantum well structure, and the multiple quantum well structure may be a multi-quantum well structure such as InGaN / GaN, AlGaN / (In) GaN, or InAlGaN / . ≪ / RTI >

The method of forming the undoped gallium nitride layer 201, the n-type gallium nitride layer 210, and the active layer 230 on the substrate 100 can be performed by a known nitride semiconductor growth method . The nitride semiconductor growth method may be, for example, physical vapor deposition (PVD) or chemical vapor deposition (CVD). Specifically, the method may be a metal organic chemical vapor deposition Vapor Deposition (MOCVD), Dual-type Thermal Evaporator, Plasma Laser Deposition (PLD), Sputtering, or E-beam Evaporation may be used. It does not.

Step 2) is a step of forming a p-type gallium nitride layer having a plurality of holes on the active layer.

2B, the p-type gallium nitride layer 250 is a layer that provides holes to the active layer 230. The p-type gallium nitride layer 250 may include a p-type dopant-doped gallium nitride-based (generally In _x Al _y Ga _1-xy N (0? X? 1, 0? Y? 1, 0? X + y? 1). The p-type dopant can be formed by implanting, for example, Mg, Be, Sr, Zn, Ca, or Ba. The p-type gallium nitride layer 210 may be formed to a thickness of, for example, 0.1 탆 to 30 탆, but is not limited thereto.

The p-type gallium nitride layer 250 has a plurality of holes, and the holes are formed to form an insulating region layer, a metal disk layer, and a magnetic layer, which will be described later. . The method of forming a plurality of holes in the p-type gallium nitride layer 250 may be formed by another method according to the embodiment.

In one embodiment, the step of forming a p-type gallium nitride layer having a plurality of holes on the active layer includes growing a p-type gallium nitride layer on the active layer, and growing the grown p- And forming a plurality of holes by etching.

The dry etching may be performed by, for example, plasma etching, reactive ion etching (RIE), inductively coupled plasma reactive ion etching (ICP-RIE) But the present invention is not limited thereto, for example, by a magnetically enhanced reactive ion etching (MERIE) method, a reactive ion beam etching method, or a sputter etching method.

When a part of the p-type gallium nitride layer 250 is dry-etched, the positions of the metal disk layer and the magnetic layer to be described later may be changed depending on the depth of the etching. The distance between the metal disk layer and the active layer may affect surface plasmon resonance, which will be described later. Accordingly, the distance between the metal disk layer and the active layer can be easily controlled by adjusting the depth of the dry etching.

In another embodiment, the step of forming a p-type gallium nitride layer having a plurality of holes on the active layer includes forming a p-type gallium nitride layer on the active layer, forming a plurality of holes Selectively growing a p-type gallium nitride layer on the p-type gallium nitride layer through a region where the mask layer is not formed, and removing the mask layer . ≪ / RTI >

FIGS. 3A to 3D are cross-sectional views illustrating a step of forming a p-type gallium nitride layer having a plurality of holes according to an embodiment of the present invention.

3A, an undoped gallium nitride layer 201, an n-type gallium nitride layer 210, and a p-type gallium nitride layer (see FIG. 3A) 252 may be formed. The p-type gallium nitride layer 252 having a predetermined size may be formed to be thinner than the p-type gallium nitride layer having a plurality of holes to be finally formed. For example, the total thickness of the p-type gallium nitride layer having the predetermined size may be in a range of 30 nm to 100 nm, but the present invention is not limited thereto. Here, by appropriately adjusting the thickness of the p-type gallium nitride layer 252 of the predetermined size, the distance between the metal disk layer and the active layer, which will be described later, can be easily controlled.

Referring to FIG. 3B, a mask layer 260 may be formed on a predetermined region of the p-type gallium nitride layer 252 formed on the active layer 230 to a predetermined size. The region where the mask layer 260 is formed may be a position where a metal disk layer or a metal disk layer and a magnetic layer to be described later are disposed. The mask layer 260 may be a mask material used for patterning the semiconductor layer. For example, SiO ₂ may be used.

3C, except for the mask layer 260 formed in a certain region on the p-type GaN layer 252 having a predetermined size, that is, the mask layer 260 is not formed, The p-type gallium nitride layer 252 can be selectively regrown through the exposed region of the gallium nitride layer 252. This is a re-growth layer 254 of the p-type gallium nitride layer, which can be regarded as one p-type gallium nitride layer 250 since it is the same material as the p-type gallium nitride layer 252 of the same size. The thickness of the re-growth layer 254 of the p-type gallium nitride layer may be, for example, in the range of 50 nm to 200 nm, but is not limited thereto.

Referring to FIG. 3D, the mask layer 260 formed between the re-growth layers 254 of the p-type gallium nitride layer can be removed. Thus, the p-type gallium nitride layer 250 having a plurality of holes can be formed.

As described above, the p-type gallium nitride layer having a plurality of holes can be formed by various methods according to the embodiments. Thus, an insulating region layer, a metal disk layer, and a magnetic layer, which will be described later, can be formed in the region where the plurality of holes are arranged. This is to solve the problem that the thin film quality of the gallium nitride layer is lowered by re-growing the gallium nitride layer formed together with the conventional metal nanoparticles, and it is possible to suppress the decrease in the gallium nitride thin film quality and to maintain the efficiency of the light emitting diode have.

The method for growing the p-type gallium nitride layer on the active layer in the step 2) may be performed by a known nitride semiconductor growth method as described in the above step 1).

Step 3) is a step of forming an insulating region layer on side surfaces and bottom surfaces of the p-type gallium nitride layer.

Referring to FIG. 2C, on the side surface and the bottom surface of each hole 255 surrounding the inside of the plurality of holes 255 of the p-type gallium nitride layer 250 having a plurality of holes formed through the step 2) The insulating region layer 300 can be formed. The insulating region layer 300 may be formed in each hole. The insulating region layer 300 is formed to surround the inside of holes such as a lower surface and a side surface of the hole of the p-type gallium nitride layer 250, so that a metal disk layer or a metal disk layer and a magnetic layer, It is possible to protect the p-type gallium nitride layer 250 from being affected by the metal deposition process when formed inside the layer 300. Specifically, the insulating region layer 300 can prevent the leakage current from being formed by interrupting the contact between the p-type GaN layer 250 and the metal disk layer and the magnetic layer. When a high current is applied, So that the current can be uniformly diffused.

The insulating region layer 300 may be formed using at least one selected from the group consisting of SiO ₂ , Si ₃ N ₄ , TiO ₂ , and Al ₂ O ₃ . The insulating region layer 300 may be formed by a known method of depositing an insulating material, and may be performed by, for example, atomic layer deposition (ALD), chemical vapor deposition (CVD), or sputtering A sputtering method can be used.

The insulating region layer 300 may be formed to a thickness of 10 nm to 20 nm. When the thickness of the insulating region layer 300 is less than 10 nm, it may be difficult to effectively block the contact between the p-type gallium nitride layer 250 and a metal disk layer or a metal layer comprising a metal disk layer and a magnetic layer described later. If the thickness of the insulating region layer 300 is 20 nm or more, the internal area of the hole of the p-type gallium nitride layer 250 becomes narrow, and the space for forming the metal disk layer may be insufficient.

Step 4) is a step of forming a metal layer filling the inside of the hole in which the insulating region layer is formed.

The metal layer may be a metal disk layer, or a metal disk layer and a magnetic layer may be sequentially stacked.

Referring to FIG. 2D, a metal layer in the form of a metal disk layer 420 may be formed in the insulating region layer 300, according to an embodiment. That is, each of the metal disk layers 420 may be formed in the insulating region layer 300 formed in a plurality of holes of the p-type gallium nitride layer 250. Filling the hole surrounded by the insulating region layer 300 formed in the hole of the p-type gallium nitride layer 250 when the metal disk layer 420 is formed in the insulating region layer 300, the upper surface of the p-type gallium nitride layer 250 may have the same height as the uppermost surface of the p-type gallium nitride layer 250.

The metal disk layer 420 may be formed to generate surface plasmon. Surface plasmon resonance can be formed by the interaction between the surface plasmon generated by the metal disk layer 420 and the active layer 230. Specifically, light emitted from the active layer 230 may act on the metal particles of the metal disk layer 420 to excite the surface plasmon on the metal disk layer 420 and the gallium nitride interface. The exciton dipole energy of the active layer 230 is transferred to the surface plasmon of the metal disk layer 420 and the surface plasmon can be generated by recombination of electrons and holes in the active layer 230. Accordingly, the surface plasmon can improve spontaneous recombination while bonding with the light emitting. The internal quantum efficiency of the light emitting diode can be improved by increasing the spontaneous recombination rate.

When the metal disk layer 420 is disposed at a sufficiently close distance from the active layer 230, energy coupling may occur. To this end, the conventional technique has a problem that a p-type gallium nitride layer is formed with a limited thickness (~ 50 nm), and electrical characteristics are deteriorated. Accordingly, the present invention is characterized in that a plurality of holes of the p-type gallium nitride layer 250 are formed while maintaining the electrical characteristics of the p-type gallium nitride layer 250 without reducing the thickness of the p-type gallium nitride layer 250, By forming the metal disk layer, the distance between the metal disk layer 420 and the active layer 230 can be kept close to each other.

The metal disk layer 420 may be formed of at least one selected from the group consisting of gold (Au), silver (Ag), platinum (Pt), aluminum (Al), copper (Cu), palladium For example. This is because the metal disk layer 420 may be a metal suitable for generating surface plasmon. The surface plasmon generated by the metal disk layer 420 may have a different resonance energy depending on the type of the metal. According to an embodiment, the metal disk layer 420 may be formed as a single layer or multiple layers of the metals. The metal disk layer 420 may be formed in the shape of a thin flat disk. The thickness of the metal disk layer 420 may be 50 to 200 nm, but is not limited thereto.

The metal disk layer 420 may be formed by a known metal deposition method. The metal disk layer 420 may be formed by a method such as plasma laser deposition (PLD), sputtering, or E-beam evaporation, It does not.

2E, a part of the p-type gallium nitride layer 250, the active layer 230, and the n-type gallium nitride layer 210 having a plurality of holes is mesa-etched to form the n-type electrode 500 Step < / RTI > The method may further include forming a p-type GaN layer 250 having a plurality of holes and a p-type electrode 600 on a top surface of the metal disk layer 420.

According to the embodiment, a transparent electrode layer made of a transparent conductive oxide or nitride may be formed on the bottom surface of the p-type electrode 600 (not shown). This may be a layer for the diffusion of the current flowing through the p-type electrode, the conductivity is excellent ITO (Indium-Tin-Oxide) , ZnO (ZinC Oxide), SnO 2 (Tin-dioxide), or TiO ₂ (Titanium -dioxide), but the present invention is not limited thereto.

According to another embodiment of the present invention, in the step of forming the metal layer filling the inside of the hole formed with the insulating region layer in the step 4), the metal layer may be formed in the form of sequentially stacking the metal disk layer and the magnetic layer . That is, a metal disk layer may be formed in the hole where the insulating region layer is formed, and a magnetic layer may be formed on the metal disk layer. Here, both the metal disk layer and the magnetic layer may be formed in a hole surrounded by the insulating region layer.

4A to 4C are cross-sectional views illustrating a method of manufacturing a high-efficiency light emitting diode according to another embodiment of the present invention.

Referring to FIG. 4A, the substrate 100 includes an undoped gallium nitride layer 201, an n-type gallium nitride layer 210, an active layer 230, and a plurality of holes (not shown) and a p-type gallium nitride layer 250 are successively formed in the p-type gallium nitride layer 250. The metal disk layer 425 is formed in the hole surrounded by the insulating region layer 300 formed on the side surfaces and the lower surface of the plurality of holes of the p- Can be formed. At this time, the metal disk layer 425 is formed to fill the inside of the insulating region layer 300 as shown in FIG. 2D. However, in the insulating region layer 300, Lt; / RTI > The thickness of the metal disk layer 425 may be, for example, 50 nm to 150 nm, but is not limited thereto.

Referring to FIG. 4B, the magnetic layer 440 may be formed on the metal disk layer 425 formed in a predetermined size in the hole where the insulating region layer 300 is formed. That is, each of the magnetic layers 440 may be formed on the metal disk layer 425 formed in the insulating region layer 300 formed in the plurality of holes of each p-type gallium nitride layer 250 . The metal disk layer 425 and the magnetic layer 440 are sequentially stacked in the holes of the p-type gallium nitride layer 250 having the insulating region layer 300 according to another embodiment of the present invention. The metal layer 400 can be formed. The thickness of the magnetic layer 440 may be, for example, 50 nm to 150 nm, but is not limited thereto.

The magnetic layer 440 can increase the internal quantum efficiency of the light emitting diode by increasing the spiral motion distribution of the charge carriers in the quantum well of the active layer 230 by applying a non-uniform magnetic field to the active layer 230. In detail, a magnetic field is formed in the direction perpendicular to the substrate 100 by the magnetic layer 440, and electrons and holes, which are charge carriers of the active layer 230, are affected by the non-uniform magnetic field, And can move in the horizontal direction with respect to the substrate 100. As described above, as the charge carriers move within the active layer 230, the recombination rate of electrons and holes increases, and the internal quantum efficiency of the light emitting diode can be improved.

The magnetic layer 440 may be formed of at least one selected from the group consisting of Fe, Au, Ag, Pt, Co, Ni, Mn, Cr, ) Group elements of the first magnetic material. This is because the magnetic layer 440 may be a metal suitable for applying a non-uniform magnetic field. The method of depositing the magnetic layer 440 on the metal disk layer 425 can be performed by a method such as sputtering or E-beam evaporation, It does not.

The magnetic layer 440 may be formed of a patterned structure, and the magnetic layer of the patterned structure may be formed using at least one magnetic material. The magnetic layer 440 of the patterned structure may be formed in the form of dot or polygon distributed regularly or irregularly. In addition, the patterned structure may have a single layer or a continuous multi-layer shape formed to a constant thickness, and in the case of a multi-layer form, a multi-layer may be formed of a single magnetic material, Can be formed. For example, in the case of a blue light emitting diode, the magnetic layer 440 may be formed of a magnetic material mainly containing silver (Ag). When the green layer 440 is formed of a green light emitting diode, Au, and the like. In case of an ultraviolet (UV) light emitting diode, the magnetic layer 440 may be formed of a magnetic material mainly containing platinum (Pt).

As described above, the magnetic layer 440 having a patterned structure can apply a more uneven magnetic field to the charge carrier of the active layer 230 than the conventional film-type magnetic layer, and can form a region capable of spiral movement of the charge carriers Can be enlarged. Thus, the magnetic layer 440 having the patterned structure can improve the internal quantum efficiency of the light emitting diode.

4C, a part of the p-type gallium nitride layer 250, the active layer 230, and the n-type gallium nitride layer 210 having a plurality of holes is mesa-etched to form the n-type electrode 500 Step < / RTI > Further, the method may further include forming a p-type electrode 600 on the uppermost surface of the p-type gallium nitride layer 250 and the magnetic layer 440.

As described above, the manufacturing method of the present invention is characterized in that a non-uniform magnetic field is applied to the charge carriers of the metal disk layer and / or the active layer capable of generating surface plasmon in the insulating region layer formed on the side and bottom surface of the p- The internal quantum efficiency of the light emitting diode can be further increased by forming the metal layer made of the magnetic layer which can be applied in the gallium nitride layer, thereby providing a high efficiency light emitting diode. In addition, the manufacturing method of the present invention can solve the problem that the thin film quality of the gallium nitride layer is lowered or leak current is generated due to the insertion of the gallium nitride layer of the conventional metal nanoparticles, A diode, a flip-chip structure, or a light-emitting diode having a lateral structure.

It should be noted that the embodiments of the present invention disclosed in the present specification and drawings are only illustrative of specific examples for the purpose of understanding and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of the present invention are possible in addition to the embodiments disclosed herein.

100: substrate 201: n-type gallium nitride layer
210: undoped gallium nitride layer 230: active layer
250, 252, 254: p-type gallium nitride layer 300: insulating region layer
400: metal layer 420, 425: metal disk layer
440: magnetic layer 500: n-type electrode
600: p-type electrode

Claims (8)

Sequentially forming an n-type gallium nitride layer and an active layer on a substrate;
Forming a p-type gallium nitride layer having a plurality of holes on the active layer;
Forming an insulating region layer on side surfaces and bottom surfaces of the p-type gallium nitride layer; And
And forming a metal layer filling the inside of the hole in which the insulating region layer is formed,
Wherein the metal layer is formed by sequentially laminating a metal disk layer and a magnetic layer. The method according to claim 1,
Wherein forming the p-type gallium nitride layer having a plurality of holes on the active layer comprises:
Growing a p-type gallium nitride layer on the active layer; And
And dry-etching the grown p-type gallium nitride layer to form a plurality of holes. The method according to claim 1,
Wherein forming the p-type gallium nitride layer having a plurality of holes on the active layer comprises:
Forming a p-type gallium nitride layer on the active layer;
Forming a mask layer for forming a plurality of holes on the p-type gallium nitride layer;
Selectively growing the p-type gallium nitride layer on the p-type gallium nitride layer through a region where the mask layer is not formed; And
And removing the mask layer. ≪ Desc / Clms Page number 19 > The method according to claim 1,
Wherein the insulating region layer is formed of at least one selected from the group consisting of SiO ₂ , Si ₃ N ₄ , TiO ₂ , and Al ₂ O ₃ . The method according to claim 1,
Wherein the insulating region layer is formed to a thickness of 10 nm to 20 nm. The method according to claim 1,
Wherein the metal disk layer comprises:
Wherein at least one selected from gold (Au), silver (Ag), platinum (Pt), aluminum (Al), copper (Cu), palladium (Pd), or a combination thereof is used. ≪ / RTI > The method according to claim 1,
The magnetic layer
Characterized in that at least one magnetic material selected from among iron (Fe), cobalt (Co), nickel (Ni), manganese (Mn), chromium (Cr), and vanadium A method of manufacturing a diode. The method according to claim 1,
The magnetic layer is formed into a patterned structure,
Wherein the magnetic layer of the patterned structure is formed using at least one magnetic material.

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