KR102587363B1 - Conductive substrate and conductive substrate manufacturing method - Google Patents

Abstract

The present invention includes an insulating substrate, a metal layer formed on at least one side of the insulating substrate, an organic material layer formed on the metal layer and containing a nitrogen-based organic material, and a blackening layer formed on the organic material layer, wherein the organic material layer Provided is a conductive substrate containing 0.2 μg/cm ² or more of the nitrogen-based organic material.

Description

Conductive substrate and conductive substrate manufacturing method

The present invention relates to a conductive substrate and a method of manufacturing the conductive substrate.

A capacitive touch panel converts position information of an object approaching on the panel surface into an electrical signal by detecting changes in capacitance caused by an object approaching the panel surface. Since the conductive substrate used in the capacitive touch panel is installed on the display surface, the conductive layer material of the conductive substrate is required to have a low reflectivity and be difficult to see.

Therefore, as the material of the conductive layer used in the capacitive touch panel, a material with low reflectivity and difficult to be seen is used, and wiring is formed on a transparent substrate or transparent film.

For example, Patent Document 1 discloses a capacitive digital touch panel in which the touch panel portion consists of a plurality of transparent sheet electrodes on which a signal pattern and a GND pattern are printed on a PET film with an ITO film.

However, in recent years, displays with touch panels have been becoming larger, and correspondingly, there has been a demand for larger areas for conductive substrates for touch panels. However, ITO has a high electrical resistance value, which causes signal deterioration, so there is a problem that conductive substrates using ITO are not suitable for large panels.

Therefore, the use of metals such as copper instead of ITO as a material for the conductive layer is being considered. However, since metal has a metallic luster, there is a problem that the visibility of the display is reduced due to reflection, so a conductive substrate formed with a layer made of a black material together with a metal such as copper has been investigated.

For example, in Patent Document 2, a film-shaped touch device is provided with striped copper wiring on each of the portions requiring transparency on the surface and back of the film, and has a black copper oxide film on the side where the copper wiring is visible among the front and back. A panel sensor is disclosed.

Japanese Patent Application Publication No. 2004-213114 Japanese Patent Laid-Open Publication No. 2013-206315

However, in recent years, it has been required to suppress the reflectance of the conductive substrate in order to further improve the visibility of the display. And, like the film-shaped touch panel sensor disclosed in Patent Document 2, the degree of suppression of reflectance was not sufficient simply by forming a black copper oxide film on the copper wiring.

In consideration of the problems of the prior art, one aspect of the present invention aims to provide a conductive substrate with suppressed reflectance.

In one aspect of the present invention for solving the above problem, an insulating substrate, a metal layer formed on at least one side of the insulating substrate, an organic material layer formed on the metal layer and containing a nitrogen-based organic material, and A conductive substrate is provided including a blackening layer formed on an organic material layer, wherein the organic material layer contains 0.2 μg/cm ² or more of the nitrogen-based organic material.

According to one aspect of the present invention, a conductive substrate with suppressed reflectance can be provided.

1A is a cross-sectional view of a conductive substrate according to an embodiment of the present invention.
1B is a cross-sectional view of a conductive substrate according to an embodiment of the present invention.
Figure 2A is a cross-sectional view of a conductive substrate according to an embodiment of the present invention.
2B is a cross-sectional view of a conductive substrate according to an embodiment of the present invention.
Figure 3 is a top view of a conductive substrate provided with mesh-shaped wiring according to an embodiment of the present invention.
FIG. 4A is a cross-sectional view taken along line AA′ of FIG. 3.
FIG. 4B is a cross-sectional view taken along line AA′ of FIG. 3.
Figure 5 is an explanatory diagram showing the relationship between the nitrogen-based organic material content of the organic material layer and the reflectance of the conductive substrate in Examples and Comparative Examples.
Figure 6 is an explanatory diagram showing the relationship between the nitrogen-based organic material content of the organic material layer and the a* value of the blackening layer in Examples and Comparative Examples.
Figure 7 is an explanatory diagram showing the relationship between the nitrogen-based organic material content of the organic material layer and the b* value of the blackening layer in Examples and Comparative Examples.

Below, an embodiment of the conductive substrate and the method for manufacturing the conductive substrate of the present invention will be described.

(Conductive substrate)

The conductive substrate of this embodiment may include an insulating substrate, a metal layer formed on at least one side of the insulating substrate, an organic material layer formed on the metal layer and containing a nitrogen-based organic material, and a blackening layer formed on the organic material layer. Additionally, the organic material layer may contain 0.2 μg/cm ² or more of nitrogen-based organic material.

Meanwhile, in this embodiment, the conductive substrate includes a substrate having a metal layer, an organic material layer, and a blackening layer on the surface of an insulating substrate before patterning the metal layer, etc., and a substrate on which the metal layer, etc. are patterned, that is, a wiring board. .

First, each member included in the conductive substrate will be described below.

The insulating substrate is not particularly limited, but is preferably a transparent substrate such as a resin substrate (resin film) or a glass substrate that transmits visible light.

The material of the resin substrate that transmits visible light is preferably, for example, polyamide-based resin, polyethylene terephthalate-based resin, polyethylene naphthalate-based resin, cycloolefin-based resin, polyimide-based resin, polycarbonate-based resin, etc. Resin can be used. In particular, as a material for the resin substrate that transmits visible light, PET (polyethylene terephthalate), COP (cycloolefin polymer), PEN (polyethylene naphthalate), polyimide, polyamide, polycarbonate, etc. can be used. there is.

The thickness of the insulating substrate is not particularly limited and can be arbitrarily selected depending on the strength, capacitance, light transmittance, etc. required when using the conductive substrate. The thickness of the insulating base material can be, for example, 10 μm or more and 200 μm or less. In particular, when using it for a touch panel, it is preferable that the thickness of the insulating base material is 20 ㎛ or more and 120 ㎛ or less, and more preferably 20 ㎛ or more and 100 ㎛ or less. In the case of use as a touch panel, for example, especially in applications where the overall thickness of the display is required to be thin, the thickness of the insulating base material is preferably 20 μm or more and 50 μm or less.

It is preferable that the total light transmittance of the insulating substrate is high. For example, the total light transmittance is preferably 30% or more, and more preferably 60% or more. When the total light transmittance of the insulating substrate is within the above range, for example, when used for a touch panel, sufficient visibility of the display can be ensured.

Meanwhile, the total light transmittance of the insulating substrate can be evaluated by the method specified in JIS K 7361-1.

Next, the metal layer is explained.

The material constituting the metal layer is not particularly limited, and a material having an electrical conductivity suitable for the application can be selected. For example, the materials constituting the metal layer include Cu, Ni, Mo, Ta, Ti, V, Cr, and Fe. It is preferable that it is a copper alloy with at least one metal selected from , Mn, Co, and W, or a material containing copper. Additionally, the metal layer may be a copper layer made of copper.

The method of forming the metal layer on the insulating substrate is not particularly limited, but it is preferable not to place an adhesive between the insulating substrate and the metal layer so as not to reduce light transmittance. That is, it is preferable that the metal layer is formed directly on at least one side of the insulating substrate. On the other hand, as will be described later, when an adhesion layer is disposed between an insulating substrate and a metal layer, it is preferable that the metal layer be formed directly on the upper surface of the adhesion layer.

In order to form a metal layer directly on the upper surface of the insulating substrate, it is preferable that the metal layer has a metal thin film layer. Additionally, the metal layer may include a metal thin film layer and a metal plating layer.

For example, a metal thin film layer can be formed on an insulating substrate by a dry plating method and the metal thin film layer can be used as a metal layer. As a result, the metal layer can be formed directly on the insulating substrate without using an adhesive. Meanwhile, as a dry plating method, which will be described in detail later, for example, sputtering method, vapor deposition method, ion plating method, etc. can be preferably used.

In addition, when increasing the film thickness of the metal layer, the metal plating layer can be formed by using the metal thin film layer as a power supply layer by electroplating, a type of wet plating method, to form a metal layer having a metal thin film layer and a metal plating layer. Since the metal layer has a metal thin film layer and a metal plating layer, even in this case, the metal layer can be formed directly on the insulating substrate without using an adhesive.

The thickness of the metal layer is not particularly limited, and when the metal layer is used as a wiring, it can be arbitrarily selected depending on the size of the current supplied to the wiring, the wiring width, etc.

However, if the metal layer is thick, etching to form a wiring pattern takes time, so problems such as side etching easily occurring and thin lines becoming difficult to form may occur. Therefore, the thickness of the metal layer is preferably 5 μm or less, and more preferably 3 μm or less.

In addition, in particular, in terms of lowering the resistance value of the conductive substrate to enable sufficient current supply, for example, the metal layer preferably has a thickness of 50 nm or more, more preferably 60 nm or more, and even more preferably 150 nm or more. do.

On the other hand, when the metal layer has a metal thin film layer and a metal plating layer as described above, it is preferable that the sum of the thicknesses of the metal thin film layer and the thickness of the metal plating layer is within the above range.

In either case, the metal layer is composed of a metal thin film layer or has a metal thin film layer and a metal plating layer, the thickness of the metal thin film layer is not particularly limited, but is preferably, for example, 50 nm or more and 500 nm or less.

The metal layer can be used as a wiring, for example, by patterning it into a desired wiring pattern, as described later. Additionally, since the metal layer can lower the electrical resistance value than ITO, which has been conventionally used as a transparent conductive film, the electrical resistance value of the conductive substrate can be reduced by forming the metal layer.

Next, the organic layer will be described.

The organic material layer can be formed on the surface of the metal layer that faces the blackening layer described later. Therefore, in the case of using a conductive substrate, it can be placed between the metal layer and the blackening layer. The organic material layer may contain nitrogen-based organic material.

The inventors of the present invention carefully studied methods for suppressing the reflectance of a conductive substrate. Then, the present invention was completed by discovering that the reflectance of a conductive substrate could be suppressed by disposing an organic material layer containing a nitrogen-based organic material between the metal layer and the blackening layer.

The nitrogen-based organic material used in the organic material layer is not particularly limited and can be arbitrarily selected from nitrogen-containing organic compounds. The nitrogen-based organic material used in the organic material layer preferably contains, for example, 1,2,3-benzotriazole or a derivative thereof. Specific examples of nitrogen-based organic substances used in the organic substance layer include 1,2,3-benzotriazole, 5-methyl-1H benzotriazole, and the like.

As a chemical agent containing a nitrogen-based organic substance used in the organic material layer, for example, a rust preventive treatment agent for copper can be preferably used, and as a commercially available chemical agent, for example, OPC Defensor (trade name, Co., Ltd.) is preferably used. (manufactured by Okuno Pharmaceutical Industries) etc. can be used.

The content of nitrogen-based organic matter in the organic layer is preferably 0.2 ㎍/cm ² or more, and more preferably 0.3 ㎍/cm ² or more. This is because, according to studies by the inventors of the present invention, the reflectance of the conductive substrate can be greatly suppressed by setting the content of the nitrogen-based organic material in the organic material layer to 0.2 μg/cm ² or more. In addition, if the content of nitrogen-based organic material in the organic material layer increases, the a* value and b* value when the color of the blackening layer is converted to the CIE (L*a*b*) color system can be lowered, especially for wiring of conductive substrates. This is desirable because it can be made inconspicuous.

The upper limit of the nitrogen-based organic material content of the organic material layer is not particularly limited. However, in order to increase the nitrogen-based organic material content of the organic material layer, measures such as increasing the concentration of the nitrogen-based organic material solution used when forming the organic material layer or lengthening the supply time of the nitrogen-based organic material solution are taken. However, if the nitrogen-based organic material content in the organic material layer is too high, there are concerns that the handleability of the nitrogen-based organic material solution is reduced or the time required to form the organic material layer is prolonged, leading to a decrease in productivity. Therefore, the nitrogen-based organic material content in the organic material layer is preferably, for example, 10 μg/cm ² or less. Furthermore, the lower the content, the better the adhesion of the blackening layer, so it is more preferable to set it to 1 μg/cm ^{2 or} less. It is more preferable to set it to 0.5㎍/cm ² or less.

The method of forming the organic material layer is not particularly limited, but, for example, it can be formed by applying and drying a nitrogen-based organic material solution containing a nitrogen-based organic material on the metal layer. The concentration of the nitrogen-based organic material in the nitrogen-based organic material solution used to form the organic material layer is not particularly limited, and can be arbitrarily selected in consideration of the nitrogen-based organic material content and operability in the target organic material layer. For example, the lower limit of the nitrogen-based organic matter concentration in the nitrogen-based organic matter solution is preferably 1 mL/L or more, and more preferably 2 mL/L or more. Additionally, the upper limit is preferably 4 mL/L or less.

When supplying a nitrogen-based organic solution to the surface of the metal layer, the temperature of the nitrogen-based organic solution is not particularly limited and can be arbitrarily selected in consideration of the viscosity, operability, reactivity, etc. of the solution. For example, it is preferable that it is 10℃ or more, and it is more preferable that it is 20℃. However, if the temperature rises, there is a risk that the nitrogen-based organic matter contained therein may react with other substances, so it is preferable to set it to 40°C or lower.

The pH of the nitrogen-based organic material solution is not particularly limited and can be selected considering the type of nitrogen-based organic material used and the reactivity of the solution. However, for example, the pH of the nitrogen-based organic material solution is preferably 2 or more, It is more preferable if it is 3 or more. However, as the pH increases, the content of nitrogen-based organic substances in the film decreases, so the pH of the nitrogen-based organic substance solution is preferably 4 or less.

The length of the treatment time for supplying and reacting the nitrogen-based organic material solution to the surface of the metal layer is not particularly limited and can be arbitrarily selected depending on the type of nitrogen-based organic material solution used, the thickness of the organic material layer to be formed, etc. For example, the processing time is preferably 5 seconds or longer, and more preferably 6 seconds or longer. However, if the processing time is too long, productivity may decrease, so it is preferably 10 seconds or less.

Next, the blackening layer is explained.

The blackening layer can be formed on the upper surface of the organic material layer.

The material of the blackening layer is not particularly limited, and any material that can suppress light reflection on the surface of the metal layer can be used appropriately as needed.

The blackening layer preferably contains at least one metal selected from, for example, Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Additionally, the blackening layer may further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.

Meanwhile, the blackening layer may contain a metal alloy containing at least two types of metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Even in this case, the blackening layer may further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen. At this time, the metal alloy containing at least two metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn is preferably Cu- Ti-Fe alloy, Cu-Ni-Fe alloy, Ni-Cu alloy, Ni-Zn alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy, and Ni-Cu-Cr alloy can be used. In particular, more preferably, a Ni-Cu alloy can be used.

The method of forming the blackening layer is not particularly limited and can be formed by any method. For example, it can be formed into a film by a dry method or a wet method.

When forming the blackening layer by a dry method, the specific method is not particularly limited, but dry plating methods such as sputtering, ion plating, and vapor deposition can be preferably used. When forming the blackening layer by a dry method, it is more preferable to use the sputtering method because it is easy to control the film thickness. On the other hand, as described above, one or more types of elements selected from carbon, oxygen, hydrogen, and nitrogen may be added to the blackening layer. In this case, preferably, a reactive sputtering method can be additionally used.

When forming a blackening layer into a film by a reactive sputtering method, a target containing the metal species constituting the blackening layer can be used as the target. When the blackening layer contains an alloy, an alloy may be formed on the surface of a filmed body such as a substrate using a target for each type of metal contained in the blackening layer, or a target in which the metal contained in the blackening layer has been alloyed in advance may be used. It may be possible.

In addition, when the blackening layer contains one or more types of elements selected from carbon, oxygen, hydrogen, and nitrogen, these can be added into the blackening layer by adding them to the atmosphere at the time of forming the blackening layer. For example, when adding carbon to the blackening layer, carbon monoxide gas and/or carbon dioxide gas are added, when adding oxygen, oxygen gas is added, when adding hydrogen, hydrogen gas and/or water are added, and nitrogen is added. In this case, nitrogen gas can be added to the atmosphere during sputtering. By adding these gases to the inert gas when forming the blackening layer, one or more elements selected from carbon, oxygen, hydrogen, and nitrogen can be added to the blackening layer. Meanwhile, argon can be preferably used as the inert gas.

When forming the blackening layer into a film by a wet method, it can be formed into a film by, for example, an electroplating method using a plating solution according to the material of the blackening layer.

As mentioned above, the blackening layer can be formed by either a dry method or a wet method. However, when forming the blackening layer, the nitrogen-based organic matter contained in the organic material layer dissolves into the plating solution and is collected in the blackening layer, thereby changing the color tone and other characteristics of the blackening layer. Since there is a risk of affecting the film, it is preferable to form a film using a dry method.

The thickness of the blackening layer is not particularly limited, but for example, it is preferably 15 nm or more, and more preferably 25 nm or more. This is because, when the thickness of the blackening layer is thin, light reflection from the metal layer surface may not be sufficiently suppressed. Therefore, as described above, light reflection from the metal layer surface is greatly suppressed by setting the thickness of the blackening layer to 15 nm or more. This is because it is desirable to configure it so that it can be done.

The upper limit of the blackening layer thickness is not particularly limited, but if it is made thicker than necessary, the time required for film formation and the time required for etching when forming wiring will be extended, resulting in an increase in cost. Therefore, the thickness of the blackening layer is preferably 70 nm or less, and more preferably 50 nm or less.

Additionally, the conductive substrate may form any layer other than the above-described insulating substrate, metal layer, organic material layer, and blackening layer. For example, an adhesion layer can be formed.

A configuration example of the adhesion layer will be described.

As described above, the metal layer can be formed on an insulating substrate, but when the metal layer is formed directly on the insulating substrate, the adhesion between the insulating substrate and the metal layer may not be sufficient. Therefore, when a metal layer is formed directly on the upper surface of an insulating substrate, the metal layer may peel off from the insulating substrate during the manufacturing process or during use.

Therefore, in the conductive substrate of this embodiment, an adhesion layer can be disposed on the insulating base material in order to improve the adhesion between the insulating base material and the metal layer.

By disposing an adhesion layer between the insulating base material and the metal layer, the adhesion between the insulating base material and the metal layer can be improved and peeling of the metal layer from the insulating base material can be suppressed.

Additionally, the adhesion layer can also function as a blackening layer. Thus, it is possible to suppress light reflection of the metal layer against light entering from the lower surface of the metal layer, that is, the insulating substrate side.

The material constituting the adhesion layer is not particularly limited, and depends on the adhesion between the insulating substrate and the metal layer, the degree of light reflection suppression required on the surface of the metal layer, and the environment (e.g., humidity, temperature) in which the conductive substrate is used. It can be selected arbitrarily depending on the degree of stability, etc.

The adhesion layer preferably contains at least one metal selected from, for example, Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Additionally, the adhesion layer may further include one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.

Additionally, the adhesion layer may include a metal alloy containing at least two types of metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. In this case as well, the adhesion layer may further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen. At this time, the metal alloy containing at least two metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn is preferably Cu- Ti-Fe alloy, Cu-Ni-Fe alloy, Ni-Cu alloy, Ni-Zn alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy, and Ni-Cu-Cr alloy can be used. In particular, more preferably, a Ni-Cu alloy can be used.

The method of forming the adhesion layer is not particularly limited, but it is preferable to form the adhesion layer using a dry plating method. As a dry plating method, for example, sputtering method, ion plating method, vapor deposition method, etc. can be preferably used. When forming an adhesion layer by a dry method, it is more preferable to use a sputtering method because it is easy to control the film thickness. On the other hand, as described above, one or more elements selected from carbon, oxygen, hydrogen, and nitrogen may be added to the adhesion layer, and in this case, a reactive sputtering method may be additionally used.

If the adhesion layer contains one or more elements selected from carbon, oxygen, hydrogen, and nitrogen, a gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen in the atmosphere when forming the adhesion layer. By adding it, it can be added to the adhesion layer. For example, when adding carbon to the adhesion layer, carbon monoxide gas and/or carbon dioxide gas are added, when adding oxygen, oxygen gas is added, when adding hydrogen, hydrogen gas and/or water are added, and nitrogen is added. In this case, nitrogen gas can be added to the atmosphere during dry plating.

A gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is preferably added to an inert gas to serve as an atmospheric gas during dry plating. The inert gas is not particularly limited, but is preferably used, for example, argon.

As described above, by forming the adhesion layer using a dry plating method, the adhesion between the insulating substrate and the adhesion layer can be improved. And, since the adhesion layer may contain metal as a main component, for example, the adhesion to the metal layer is also high. Therefore, by disposing an adhesion layer between the insulating substrate and the metal layer, peeling of the metal layer can be suppressed.

The thickness of the adhesion layer is not particularly limited, but for example, it is preferably 3 nm or more and 50 nm or less, more preferably 3 nm or more and 35 nm or less, and even more preferably 3 nm or more and 33 nm or less.

When the adhesion layer also functions as a blackening layer, that is, when light reflection in the metal layer is suppressed, the thickness of the adhesion layer is preferably 3 nm or more as described above.

The upper limit of the thickness of the adhesion layer is not particularly limited, but if it is made thicker than necessary, the time required for film formation and the time required for etching when forming wiring will be extended, resulting in an increase in cost. Therefore, as described above, the thickness of the adhesion layer is preferably 50 nm or less, more preferably 35 nm or less, and even more preferably 33 nm or less.

Next, a configuration example of a conductive substrate will be described.

As previously described, the conductive substrate of this embodiment may have an insulating substrate, a metal layer, an organic material layer, and a blackening layer. Additionally, layers such as an adhesion layer may be formed arbitrarily.

A specific configuration example will be described below using FIGS. 1A, 1B, 2A, and 2B. 1A, 1B, 2A, and 2B show examples of cross-sectional views in a plane parallel to the lamination direction of the insulating member, metal layer, organic layer, and blackening layer of the conductive substrate of the present embodiment.

The conductive substrate of this embodiment may have, for example, a structure in which a metal layer, an organic material layer, and a blackening layer are laminated in that order from the insulating substrate side on at least one side of the insulating substrate.

Specifically, for example, as in the conductive substrate 10A shown in FIG. 1A, a metal layer 12, an organic layer 13, and a blackening layer 14 are formed on one side 11a of the insulating substrate 11 in that order. It can be stacked one layer at a time. In addition, like the conductive substrate 10B shown in FIG. 1B, metal layers 12A and 12B and organic material layers 13A and 13B are formed on one side 11a and the other side 11b of the insulating substrate 11, respectively. ), blackening layers 14A, 14B can be laminated one by one in that order.

Additionally, as an optional layer, for example, an adhesion layer may be further formed. In this case, for example, it can be a structure in which an adhesion layer, a metal layer, an organic material layer, and a blackening layer are formed in that order from the insulating substrate side on at least one side of the insulating substrate.

Specifically, for example, like the conductive substrate 20A shown in FIG. 2A, an adhesion layer 15, a metal layer 12, an organic layer 13, and a blackening layer ( It can be laminated in the order of 14).

In this case as well, an adhesion layer, a metal layer, an organic layer, and a blackening layer may be laminated on both sides of the insulating substrate 11. Specifically, like the conductive substrate 20B shown in FIG. 2B, adhesion layers 15A and 15B and metal layers 12A and 12B are formed on one side 11a and the other side 11b of the insulating substrate 11, respectively. , organic material layers (13A, 13B), and blackening layers (14A, 14B) can be laminated in that order.

On the other hand, in the case where a metal layer, an organic material layer, a blackening layer, etc. are laminated on both sides of the insulating substrate as shown in FIGS. 1b and 2b, the layers laminated on the top and bottom of the insulating substrate 11 are symmetrical with the insulating substrate 11 as the plane of symmetry. Although an example of arrangement is shown, it is not limited to this form. For example, in FIG. 2B, the configuration on one side 11a of the insulating substrate 11 includes a metal layer 12A, an organic layer 13A, and a blackening layer without forming an adhesion layer 15A as in the configuration in FIG. 1B. In the form of stacking in the order of (14A), the layers stacked on top and bottom of the insulating base 11 can be made asymmetrical.

However, in the conductive substrate of the present embodiment, by forming a metal layer, an organic layer, and a blackening layer on the insulating substrate, light reflection by the metal layer can be suppressed and the reflectance of the conductive substrate can be suppressed.

There is no particular limitation on the degree of reflectance of the conductive substrate of this embodiment, but for example, in order to improve display visibility when used as a conductive substrate for a touch panel, it is better for the reflectance to be low. For example, the average reflectance of light with a wavelength of 400 nm to 700 nm is preferably 20% or less, more preferably 17% or less, and especially preferably 15% or less.

The reflectance can be measured by irradiating light to the blackening layer of the conductive substrate. Specifically, for example, when the metal layer 12, the organic material layer 13, and the blackening layer 14 are laminated in that order on one side 11a of the insulating substrate 11 as shown in FIG. 1A, the blackening layer It can be measured by irradiating light to the surface A of the blackening layer 14 so as to irradiate light to (14). In the measurement, light with a wavelength of 400 nm or more and 700 nm or less is radiated, for example, at wavelength intervals of 1 nm, to the blackening layer 14 of the conductive substrate as described above, and the average of the measured values is taken as the average value of the conductive substrate. It can be done with a reflectance of .

The conductive substrate of this embodiment can preferably be used as a conductive substrate for a touch panel. In this case, the conductive substrate can be configured to have mesh-shaped wiring.

A conductive substrate with mesh-shaped wiring can be obtained by etching the metal layer, organic material layer, and blackening layer of the conductive substrate of this embodiment described so far.

For example, mesh-shaped wiring can be achieved by two layers of wiring. A specific configuration example is shown in Figure 3. FIG. 3 shows a view of the conductive substrate 30 with mesh-shaped wiring as seen from the upper surface in the direction in which metal layers, etc. are laminated. In order to make the wiring pattern easier to understand, the wiring 31A and 31B are formed by patterning the insulating substrate 11 and the metal layer. ) The description of layers other than this is omitted. Additionally, the wiring 31B visible through the insulating substrate 11 is also shown.

The conductive substrate 30 shown in FIG. 3 has an insulating substrate 11, a plurality of wirings 31A parallel to the Y-axis direction in the drawing, and a wiring 31B parallel to the X-axis direction. Meanwhile, the wirings 31A and 31B are formed by etching a metal layer, and an organic layer and a blackening layer (not shown) are formed on the upper and/or lower surfaces of the wirings 31A and 31B. Additionally, the organic material layer and the blackening layer are etched into the same shape as the wirings 31A and 31B.

The arrangement of the insulating base 11 and the wirings 31A and 31B is not particularly limited. An example of the configuration of the insulating base 11 and wiring arrangement is shown in FIGS. 4A and 4B. Figures 4a and 4b correspond to cross-sectional views taken along line A-A' in Figure 3.

First, as shown in FIG. 4A, wirings 31A and 31B may be arranged on the upper and lower surfaces of the insulating substrate 11, respectively. Meanwhile, in FIG. 4A, organic material layers 32A and 32B and blackening layers 33A and 33B etched to the same shape as the wiring are disposed on the upper surface of the wiring 31A and the lower surface of the wiring 31B.

Additionally, as shown in FIG. 4B, a pair of insulating substrates 11 are used, and wirings 31A and 31B are arranged on the upper and lower surfaces with one insulating substrate 11 interposed, and one wiring 31B may be disposed between the insulating substrates 11. In this case as well, organic material layers 32A and 32B and blackening layers 33A and 33B etched to the same shape as the wiring are disposed on the upper surfaces of the wirings 31A and 31B. Meanwhile, as described above, an adhesion layer may be formed in addition to the metal layer, organic material layer, and blackening layer. Therefore, in both FIGS. 4A and 4B, for example, an adhesive layer may be formed between the wiring 31A and/or the wiring 31B and the insulating substrate 11. When forming an adhesive layer, it is preferable that the adhesive layer is also etched into the same shape as the wirings 31A and 31B.

The conductive substrate having the mesh-shaped wiring shown in FIGS. 3 and 4A includes metal layers 12A and 12B, organic layers 13A and 13B, and blackening layers on both sides of the insulating member 11, as shown in FIG. 1B, for example. It can be formed with a conductive substrate provided with (14A, 14B).

1B as an example, first, the metal layer 12A, the organic layer 13A, and the blackening layer 14A on one side 11a of the insulating substrate 11 are shown in FIG. A plurality of linear patterns parallel to the Y-axis direction of 1b are etched so that they are arranged at predetermined intervals along the X-axis direction. Meanwhile, the X-axis direction in FIG. 1B refers to a direction parallel to the width direction of each layer. Additionally, the Y-axis direction in FIG. 1B refers to a direction perpendicular to the ground in FIG. 1B.

Then, the metal layer 12B, the organic layer 13B, and the blackening layer 14B on the other side 11b of the insulating substrate 11 are formed in a plurality of linear patterns parallel to the X-axis direction in FIG. 1B at predetermined intervals. Etch so that it is arranged along the Y-axis direction.

Through the above operations, a conductive substrate having mesh-shaped wiring shown in Figs. 3 and 4A can be formed. Meanwhile, both sides of the insulating substrate 11 may be etched simultaneously. That is, the metal layers 12A and 12B, the organic layers 13A and 13B, and the blackening layers 14A and 14B may be etched simultaneously. In addition, the conductive substrate further including an adhesion layer patterned in the same shape as the wirings 31A and 31B between the wirings 31A and 31B and the insulating substrate 11 in FIG. 4A uses the conductive substrate shown in FIG. 2B. Therefore, it can be manufactured by etching in the same way.

The conductive substrate having the mesh-shaped wiring shown in FIG. 3 can also be formed by using two conductive substrates shown in FIG. 1A or FIG. 2A. Taking the case of forming using two conductive substrates of FIG. 1A as an example, a metal layer 12, an organic material layer 13, and a blackening layer 14 are formed on the two conductive substrates shown in FIG. 1A, respectively, in the X-axis direction. A plurality of linear patterns parallel to are etched so that they are arranged along the Y-axis direction at predetermined intervals. Then, by orienting the two conductive substrates so that the linear patterns formed on each conductive substrate by the above etching process intersect each other, a conductive substrate with mesh-shaped wiring can be obtained. When two conductive substrates are glued together, the surface on which they are glued is not particularly limited. For example, the structure shown in FIG. 4B is where the surface A in FIG. 1A on which the metal layer 12, etc. is laminated is joined to the other surface 11b in FIG. 1A on which the metal layer 12, etc. is not laminated. You can also make it happen.

Additionally, for example, the other surfaces 11b of the insulating substrate 11 in FIG. 1A on which the metal layer 12 and the like are not laminated can be joined together so that the cross section has the structure shown in FIG. 4A.

Meanwhile, in FIGS. 4A and 4B, the conductive substrate further includes an adhesion layer patterned in the same shape as the wiring (31A, 31B) between the wiring (31A, 31B) and the insulating substrate 11, the conductive substrate shown in FIG. 1A. It can be manufactured by using the conductive substrate shown in FIG. 2A instead of the substrate.

The wiring width, the distance between wirings, etc. in the conductive substrate having mesh-shaped wiring shown in FIGS. 3, 4A, and 4B are not particularly limited and can be selected according to, for example, the amount of current to flow through the wiring.

3, 4A, and 4B show an example of forming a mesh-shaped wiring (wiring pattern) by combining straight wiring, but this is not limited to this form, and the wiring constituting the wiring pattern may be arbitrary. It can be made in the shape of . For example, to prevent moiré (interference patterns) from occurring between display images, the shapes of the wires that make up the mesh-shaped wiring pattern may be made into various shapes such as jagged, curved lines (zigzag straight lines). there is.

In this way, a conductive substrate having a mesh-shaped wiring composed of two layers of wiring can preferably be used, for example, as a conductive substrate for a projected capacitance touch panel.

According to the above conductive substrate of this embodiment, it has a structure in which an organic material layer containing a certain amount or more of a nitrogen-based organic material and a blackening layer are laminated on a metal layer formed on at least one side of an insulating substrate. As a result, light reflection on the surface of the metal layer is suppressed, making it possible to obtain a conductive substrate with suppressed reflectance. In addition, for example, when used for purposes such as a touch panel, display visibility can be improved.

(Conductive substrate manufacturing method)

Next, a configuration example of the conductive substrate manufacturing method of this embodiment will be described.

The method for manufacturing a conductive substrate of this embodiment includes a metal layer forming step of forming a metal layer on at least one side of an insulating substrate, an organic material layer forming step of forming an organic material layer containing a nitrogen-based organic material on the metal layer, and a blackening layer on the organic material layer. It may have a blackening layer forming process to form.

And, in the organic layer forming process, it is preferable to form the organic layer so as to contain 0.2 μg/cm ² or more of nitrogen-based organic matter.

Below, the method for manufacturing a conductive substrate of this embodiment will be described in detail.

On the other hand, by the conductive substrate manufacturing method of this embodiment, the above-described conductive substrate can be appropriately manufactured as needed. Therefore, for points other than those described below, the configuration can be the same as that of the conductive substrate described above, so some descriptions are omitted.

The insulating substrate used in the metal layer formation process can be prepared in advance. The type of insulating substrate used is not particularly limited, but as described above, a transparent substrate such as a resin substrate (resin film) or a glass substrate that transmits visible light can be preferably used. The insulating substrate may be cut to an arbitrary size in advance as needed.

And, as previously explained, the metal layer preferably has a metal thin film layer. Additionally, the metal layer may have a metal thin film layer and a metal plating layer. Therefore, the metal layer forming process may include, for example, a process of forming a metal thin film layer by a dry plating method. In addition, the metal layer forming process may include a process of forming a metal thin film layer by a dry plating method and a process of forming a metal plating layer by using the metal thin film layer as a power supply layer and an electroplating method, which is a type of wet plating method.

The dry plating method used in the process of forming the metal thin film layer is not particularly limited, and for example, vapor deposition, sputtering, or ion plating can be used. Meanwhile, as a vapor deposition method, a vacuum vapor deposition method can be preferably used. As a dry plating method used in the process of forming a metal thin film layer, it is more preferable to use a sputtering method because it is particularly easy to control the film thickness.

Next, the process for forming the metal plating layer will be described. The conditions in the process of forming the metal plating layer by the wet plating method, that is, the electroplating treatment conditions, are not particularly limited, and the conditions according to the usual method may be adopted. For example, a metal plating layer can be formed by supplying a base material on which a metal thin film layer has been formed to a plating tank containing a metal plating solution, and controlling the current density, transfer speed of the base material, etc.

Materials that can be appropriately used for the metal layer, appropriate thickness of the metal layer, etc. as needed have been previously described, so descriptions will be omitted here.

Next, the organic layer forming process will be described.

In the organic material layer forming process, an organic material layer containing a nitrogen-based organic material can be formed on the metal layer.

As previously explained, the reflectance of the conductive substrate can be suppressed by forming an organic material layer between the metal layer and the blackening layer.

The method of forming the organic material layer is not particularly limited, but, for example, it can be formed by applying a nitrogen-based organic material solution on the metal layer and drying it.

The method of applying the solution containing the material constituting the organic layer on the metal layer is not particularly limited and can be applied by any method. For example, a solution containing the material constituting the organic material layer can be applied onto the metal layer by applying a nitrogen-based organic material solution by spraying or the like, or by immersing the insulating substrate on which the metal layer is formed in the nitrogen-based organic material solution.

The nitrogen-based organic material used in the organic material layer is not particularly limited and can be arbitrarily selected from nitrogen-containing organic compounds. The nitrogen-based organic material used in the organic material layer preferably contains, for example, 1,2,3-benzotriazole or a derivative thereof. Specific examples of nitrogen-based organic substances used in the organic substance layer include 1,2,3-benzotriazole, 5-methyl-1H benzotriazole, and the like.

As a chemical agent containing a nitrogen-based organic substance used in the organic material layer, for example, a rust preventive treatment agent for copper can be preferably used, and as a commercially available chemical agent, for example, OPC Defensor (trade name, Co., Ltd.) is preferably used. (manufactured by Okuno Pharmaceutical Industries) etc. can be used.

The content of nitrogen-based organic matter in the organic layer is preferably 0.2 ㎍/cm ² or more, and more preferably 0.3 ㎍/cm ² or more. This is because, according to studies by the inventors of the present invention, the reflectance of the conductive substrate can be greatly suppressed by setting the content of the nitrogen-based organic material in the organic material layer to 0.2 μg/cm ² or more. In addition, if the content of nitrogen-based organic material in the organic material layer increases, the a* value and b* value when the color of the blackening layer is converted to the CIE (L*a*b*) color system can be lowered, especially for wiring of conductive substrates. This is desirable because it can be made inconspicuous.

The upper limit of the nitrogen-based organic material content of the organic material layer is not particularly limited. However, in order to increase the nitrogen-based organic material content of the organic material layer, measures such as increasing the concentration of the nitrogen-based organic material solution used when forming the organic material layer or lengthening the supply time of the nitrogen-based organic material solution are taken. However, if the nitrogen-based organic material content in the organic material layer is too high, there are concerns that the handleability of the nitrogen-based organic material solution is reduced or the time required to form the organic material layer is prolonged, leading to a decrease in productivity. Therefore, the content of the nitrogen-based organic compound in the organic material layer is preferably, for example, 10 μg/cm ² or less. Additionally, the lower the content, the better the adhesion of the blackening layer, so setting it to 1 μg/cm ² or less is preferable. It is preferable, and it is more preferable to set it to 0.5 ㎍/cm ² or less.

Since the conditions that can be appropriately adopted as needed when supplying the nitrogen-based organic solution to the metal layer have been previously described, the description is omitted here.

On the other hand, after applying the nitrogen-based organic material solution, the substrate to which the nitrogen-based organic material solution has been applied may be washed with water to remove excess nitrogen-based organic material solution.

Next, the blackening layer formation process is explained.

The method of forming the blackening layer in the blackening layer formation process is not particularly limited, and can be formed by any method.

As a method of forming the blackening layer into a film in the blackening layer formation process, dry plating methods such as sputtering, ion plating, and vapor deposition can be preferably used, for example. In particular, it is more preferable to use the sputtering method because it is easy to control the film thickness. On the other hand, as described above, one or more elements selected from carbon, oxygen, hydrogen, and nitrogen may be added to the blackening layer, and in this case, a reactive sputtering method may be additionally used.

Additionally, as previously explained, the blackening layer can be formed by a wet method such as electroplating.

However, when forming a blackening layer, nitrogen-based organic substances contained in the organic material layer dissolve in the plating solution and are collected in the blackening layer, which may affect the color tone and other characteristics of the blackening layer. Therefore, it is preferable to form a film using a dry method.

Materials that can be appropriately used as the blackening layer, the appropriate thickness of the blackening layer, etc. have been previously described, so descriptions are omitted here.

In the conductive substrate manufacturing method of this embodiment, an arbitrary process may be further performed in addition to the above-described process.

For example, when forming an adhesion layer between an insulating base material and a metal layer, an adhesion layer forming process of forming an adhesion layer on the surface of the insulating base material on which the metal layer is to be formed can be performed. When performing the adhesion layer forming process, the metal layer forming process can be performed after the adhesion layer forming process, and in the metal layer forming process, a metal thin film layer can be formed on the base material on which the adhesion layer was formed on the insulating base material in this process. .

In the adhesion layer forming process, the method of forming the adhesion layer is not particularly limited, but it is preferable to form the adhesion layer by a dry plating method. As a dry plating method, for example, sputtering method, ion plating method, vapor deposition method, etc. can be preferably used. When forming the adhesion layer by a dry method, it is more preferable to use the sputtering method because it is easy to control the film thickness. Meanwhile, as described above, one or more elements selected from carbon, oxygen, hydrogen, and nitrogen may be added to the adhesion layer. In this case, a reactive sputtering method may be additionally used.

Materials that can be suitably used as the adhesion layer, the appropriate thickness of the adhesion layer, etc. have been previously described, so descriptions are omitted here.

The conductive substrate obtained by the conductive substrate manufacturing method of this embodiment can be used for various purposes, such as a touch panel, for example. In the case of use for various purposes, it is preferable that the metal layer, organic material layer, and blackening layer included in the conductive substrate of this embodiment are patterned. On the other hand, when forming an adhesion layer, it is preferable that the adhesion layer is also patterned. For example, the metal layer, organic material layer, blackening layer, and in some cases even the adhesion layer can be patterned to suit the desired wiring pattern, and the metal layer, organic material layer, blackening layer, and even the adhesion layer in some cases can be patterned in the same shape. It is desirable to have

Thus, the method of manufacturing a conductive substrate of this embodiment may include a patterning process of patterning the metal layer, the organic material layer, and the blackening layer. Additionally, when forming an adhesion layer, the patterning process can be a process of patterning the adhesion layer, metal layer, organic layer, and blackening layer.

The specific method of the patterning process is not particularly limited and can be performed by any method. For example, in the case of a conductive substrate 10A in which a metal layer 12, an organic material layer 13, and a blackening layer 14 are stacked on an insulating substrate 11 as shown in FIG. 1A, first, the surface on the blackening layer 14 A mask placement step may be performed in (A) in which a mask having a desired pattern is placed. Next, an etching step of supplying an etchant to the surface A of the blackening layer 14, that is, the surface on which the mask is placed, can be performed.

The etching solution used in the etching step is not particularly limited and can be arbitrarily selected depending on the material constituting the layer to be etched. For example, the etching solution may be changed for each layer, or the metal layer, organic material layer, blackening layer, and, in some cases, even the adhesion layer may be etched simultaneously with the same etching solution.

In addition, as shown in Figure 1b, a conductive material layer (12A, 12B), organic material layers (13A, 13B), and blackening layers (14A, 14B) are laminated on one side (11a) and the other side (11b) of the insulating substrate 11. A patterning process can also be performed on the substrate 10B. In this case, for example, a mask placement step of arranging a mask with a desired pattern on the surface A and surface B on the blackening layers 14A and 14B can be performed. Next, an etching step of supplying an etchant to the surface A and surface B of the blackening layers 14A and 14B, that is, the surface on which the mask is placed, can be performed.

There is no particular limitation on the pattern formed in the etching step, and it can be of any shape. For example, in the case of the conductive substrate 10A shown in FIG. 1A, as described above, there are a plurality of straight lines and jagged curved lines (zigzag straight lines) for the metal layer 12, the organic material layer 13, and the blackening layer 14. ), etc. can be formed to include a pattern.

Additionally, in the case of the conductive substrate 10B shown in FIG. 1B, a pattern can be formed so that the metal layers 12A and 12B have mesh-shaped wiring. In this case, the organic material layer 13A and the blackening layer 14A are preferably patterned to have the same shape as the metal layer 12A, and the organic material layer 13B and the blackening layer 14B are preferably patterned to have the same shape as the metal layer 12B.

In addition, for example, in the patterning process, the metal layer 12 or the like may be patterned on the above-described conductive substrate 10A, and then a lamination process may be performed in which two or more patterned conductive substrates are stacked. When stacking, for example, by stacking the metal layer patterns of each conductive substrate so that they intersect, a laminated conductive substrate with mesh-shaped wiring can be obtained.

The method of fixing two or more stacked conductive substrates is not particularly limited, but can be fixed with, for example, an adhesive.

The conductive substrate obtained by the conductive manufacturing method of the present embodiment described above has a structure in which an organic material layer containing a certain amount or more of a nitrogen-based organic substance and a blackening layer are laminated on a metal layer formed on at least one side of an insulating substrate. In this way, light reflection on the surface of the metal layer is suppressed, and a conductive substrate with a suppressed reflectance can be obtained. Additionally, when used for purposes such as a touch panel, for example, the visibility of the display can be improved.

[Example]

The following will describe specific examples and comparative examples, but the present invention is not limited to these examples.

(Assessment Methods)

First, the evaluation method of the obtained conductive substrate will be explained.

(1) Reflectance

In each of the following examples and comparative examples, the reflectance was measured for the produced conductive substrates.

The measurement was performed by installing a reflectance measurement unit in an ultraviolet-visible spectrophotometer (manufactured by Shimadzu Corporation, model: UV-2550).

As will be described later, in each Example and Comparative Example, a conductive substrate having the structure shown in FIG. 2A was produced. Therefore, the reflectance measurement is performed by measuring light with a wavelength in the range of 400 to 700 at an incident angle of 5° and a light reception angle of 5° with respect to the surface A of the blackening layer 14 of the conductive substrate 10A shown in FIG. 2A. The investigation was conducted. Meanwhile, for the light irradiated to the conductive substrate, measurements were made while changing the wavelength by 1 nm within the range of 400 to 700, and the average of the measurement results was taken as the reflectance (average reflectance) of the conductive substrate.

(2) L* value, a* value, b* value of blackening layer

When measuring the reflectance, the L* value, a* value, and b* value are calculated by irradiating the surface A of the blackening layer 14 with light having a wavelength of 400 to 700 while changing the wavelength by 1 nm. was calculated.

(3) Content of nitrogen-based organic matter

After forming an adhesion layer, a metal layer, and an organic material layer on an insulating substrate and before forming a blackening layer, a portion of the manufactured substrate was cut out and the content of nitrogen-based organic material contained in the organic material layer was evaluated.

The substrate was immersed in the extraction solution and the organic material layer was partially cut off, placed in a screw bottle, and cleaned with an ultrasonic cleaner for 15 minutes.

At this time, a solution containing 1% hydrochloric acid, 49% water, and 50% methanol by volume was used as the extraction solution.

The extract, in which the nitrogen-based organic matter in the organic layer was extracted into the extraction solution, was analyzed by liquid chromatography analysis using a liquid chromatography-mass spectrometer (LC-MS) to calculate the content of the nitrogen-based organic matter in the extract.

Meanwhile, the liquid chromatography mass spectrometer used was an Aquity H-Class product manufactured by Waters for the liquid chromatography section, and a model Q-STAR XL manufactured by AB Sciex for the mass spectrometer.

Then, the calculated nitrogen-based organic material content (μg) was divided by the area (cm ² ) of the organic material layer of the substrate placed in the screw bottle, thereby calculating the nitrogen-based organic material content.

(Sample production conditions)

As examples and comparative examples, conductive substrates were produced under the conditions described below and evaluated by the evaluation method described above.

[Example 1]

(Adhesion layer formation process)

An adhesion layer was formed on one side of an insulating substrate made of polyethylene terephthalate resin (PET) measuring 500 mm long x 500 mm wide and 50 μm thick. On the other hand, the total light transmittance of the polyethylene terephthalate resin insulating substrate used as the insulating substrate was evaluated by the method specified in JIS K 7361-1, and was found to be 97%.

In the adhesion layer formation process, a Ni-Cu alloy layer containing oxygen as an adhesion layer was formed into a film using a sputtering device equipped with a target of Ni-17% by weight Cu alloy. Below, the method of forming the adhesion layer will be described.

The above-described insulating substrate, previously heated to 60°C to remove moisture, was installed in the chamber of the sputtering device.

Next, the inside of the chamber was evacuated to 1×10 ^{-3 Pa} , and then argon gas and oxygen gas were introduced to set the pressure inside the chamber to 1.3 Pa. Meanwhile, at this time, the atmosphere in the chamber is 30% oxygen by volume and the remaining part is argon.

Then, power was supplied to the target under this atmosphere, and an adhesion layer was formed to a thickness of 20 nm on one side of the insulating substrate.

(Metal layer formation process)

In the metal layer formation process, a metal thin film layer formation process and a metal plating layer formation process were performed.

First, the metal thin film layer forming process will be described.

In the metal thin film layer forming step, the adhesive layer formed on the insulating substrate in the adhesion layer forming step was used as a substrate, and a copper thin film layer was formed as a metal thin film layer on the adhesion layer.

The metal thin film layer was formed using a sputtering device in the same manner as the adhesion layer, except that a copper target was used and argon gas was supplied after exhausting the chamber in which the substrate was set to create an argon atmosphere.

The copper thin film layer, which is a metal thin film layer, was formed into a film so that the film thickness was 150 nm.

Next, in the metal plating layer forming process, a copper plating layer was formed as a metal plating layer. The copper plating layer was formed into a film using an electroplating method so that the thickness of the copper plating layer was 0.5 μm.

(Organic layer formation process)

In the organic layer forming process, the organic layer was formed on the metal layer, which is a laminate in which an adhesion layer and a metal layer are formed on an insulating substrate.

In the organic material layer forming step, the above-described laminate was first immersed in an OPC diffuser (manufactured by Okuno Pharmaceutical Co., Ltd.) solution containing 1,2,3-benzotriazole as a nitrogen-based organic material for 7 seconds. Meanwhile, the OPC diffuser solution used was previously adjusted so that the concentration of 1,2,3-benzotriazole was 3 mL/L, the immersion temperature was 30°C, and the pH was 3.

Then, the solution adhering to the upper surface of the metal layer, that is, the surface opposite to the adhesion layer of the metal layer, was removed by washing with water and then dried to form an organic material layer on the metal layer.

Meanwhile, after the organic material layer forming process, a portion of the substrate was cut out and used for evaluating the content of nitrogen-based organic materials described above.

(Blackening layer formation process)

In the blackening layer formation process, a Ni-Cu layer was formed as a blackening layer on the organic substance layer formed in the organic substance layer formation process by a sputtering method.

In the blackening layer formation process, a Ni-Cu alloy layer was formed as a blackening layer using a sputtering device equipped with a target of Ni-35% by weight Cu alloy. Below, the method of forming the blackening layer will be described.

First, a laminate in which an adhesion layer, a metal layer, and an organic material layer were laminated on an insulating substrate was set in the chamber of a sputtering device.

Next, the inside of the chamber was evacuated to 1×10 ^-3 Pa, and then argon gas was introduced to set the ^pressure inside the chamber to 1.3 Pa.

Then, power was supplied to the target under this atmosphere, and a blackening layer was formed on the organic material layer to a thickness of 30 nm.

By the above process, a blackening layer is formed on the upper surface of the metal layer, that is, on the side opposite to the side facing the adhesion layer of the metal layer, with the organic material layer in between, and the adhesion layer, metal layer, organic material layer, and blackening layer are formed on the insulating substrate in that order. A laminated conductive substrate is obtained.

The obtained conductive substrate was evaluated for the above-mentioned reflectance, L* value, a* value, and b* value of the blackening layer.

The results are shown in Table 1.

[Example 2 to Example 18]

A conductive substrate was manufactured in the same manner as in Example 1, except that the nitrogen-based organic material content of the organic material layer was changed by changing the concentration, immersion temperature, and pH of the OPC diffuser solution when forming the organic material layer.

The obtained conductive substrate was evaluated for the above-mentioned reflectance, L* value, a* value, and b* value of the blackening layer.

The results are shown in Table 1.

[Comparative Example 1]

A conductive substrate was produced in the same manner as in Example 1, except that the pH of the OPC diffuser solution was set to 1 when forming the organic material layer. Meanwhile, after the organic material layer forming process, a portion of the substrate was cut out and used for evaluating the content of nitrogen-based organic materials described above.

The obtained conductive substrate was evaluated for the above-mentioned reflectance, L* value, a* value, and b* value of the blackening layer.

The results are shown in Table 1.

5 to 7 show graphs showing the relationship between the content of nitrogen-based organic matter and the reflectance, a*, and b* shown in Table 1. Meanwhile, in each figure, the △ mark to the left of the dotted line represents Comparative Example 1, and the other points represent the results of Examples 1 to 18.

As can be clearly seen from the results in Table 1 and Figures 5 to 7, when the nitrogen-based organic material content in the organic material layer is 0.2 ㎍/cm ² or more, the reflectance of the conductive substrate is greatly reduced, and the a* value, which is the chromaticity of the blackening layer, It was confirmed that the b* value also changed significantly.

From these results, it was confirmed that the reflectance of the conductive substrate was greatly suppressed by forming an organic material layer containing a nitrogen-based organic material between the metal layer and the blackening layer and setting the content of the organic material layer to 0.2 μg/cm ² or more.

In the above, the conductive substrate and the method of manufacturing the conductive substrate have been described through embodiments and examples, but the present invention is not limited to the above embodiments and examples. Various modifications and changes are possible within the scope of the gist of the present invention described in the claims.

This application claims priority based on Patent Application No. 2015-152895, filed with the Japan Patent Office on July 31, 2015, and the entire contents of Patent Application No. 2015-152895 are incorporated into this international application.

10A,10B,20A,20B,30 conductive substrate
11 Insulating substrate
12,12A,12B metal layer
13,13A,13B,32A,32B organic layer
14,14A,14B,33A,33B blackening layer

Claims (5)

an insulating substrate,
a metal layer formed on at least one side of the insulating substrate;
An organic material layer formed on the metal layer and containing nitrogen-based organic material,
A blackening layer formed on the organic layer and containing a material capable of suppressing light reflection on the surface of the metal layer,
A conductive substrate wherein the organic material layer contains 0.2 μg/cm ² or more of the nitrogen-based organic material. According to paragraph 1,
A conductive substrate wherein the nitrogen-based organic material contains 1,2,3-benzotriazole or a derivative thereof. According to claim 1 or 2,
A conductive substrate with an average reflectance of 20% or less for light with a wavelength of 400 nm to 700 nm. A metal layer forming process of forming a metal layer on at least one side of an insulating substrate,
An organic material layer forming process of forming an organic material layer containing nitrogen-based organic material on the metal layer;
A blackening layer forming step of forming a blackening layer on the organic layer containing a material capable of suppressing light reflection from the surface of the metal layer,
In the organic material layer forming process, the organic material layer is formed to contain 0.2 μg/cm ² or more of the nitrogen-based organic material. According to paragraph 4,
A method of manufacturing a conductive substrate wherein the nitrogen-based organic material contains 1,2,3-benzotriazole or a derivative thereof.

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