KR102587195B1 - Apparatus for Processing Substrate - Google Patents

Abstract

The present invention includes a substrate support part that supports a plurality of substrates and rotates about a rotation axis, a lead disposed on an upper side of the substrate support part, and the first gas injection unit coupled to the lead, and the first gas injection unit A first electrode in which a plurality of protruding electrodes are combined, a second electrode in which a plurality of openings are formed at positions corresponding to the protruding electrodes, and a second electrode formed in the first electrode to allow the first gas to be sprayed toward the substrate supporter to flow. It relates to a substrate processing apparatus including a first flow path member and a second flow path member formed on the first electrode to be spaced apart from the first flow path member along the rotation direction of the substrate support part.

Description

Substrate processing device {Apparatus for Processing Substrate}

The present invention relates to a substrate processing device that performs processing processes such as deposition and etching processes on a substrate.

Generally, in order to manufacture solar cells, semiconductor devices, flat panel displays, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. For this purpose, processing processes such as a deposition process to deposit a thin film of a specific material on a substrate, a photo process to selectively expose the thin film using a photosensitive material, and an etching process to form a pattern by removing the thin film from the selectively exposed portion are required. It comes true. This processing process is performed by a substrate processing device.

A substrate processing apparatus according to the prior art includes a gas injection unit that sprays a process gas onto the substrate to perform a processing process. However, the substrate processing apparatus according to the prior art has a problem in that the quality of the processed substrate deteriorates due to a partial pressure difference occurring in the space between the gas injection unit and the substrate.

The present invention was developed to solve the problems described above, and is intended to provide a substrate processing device that can reduce the pressure difference of process gas in the space between the gas injection unit and the substrate.

In order to solve the problems described above, the present invention may include the following configuration.

The substrate processing apparatus according to the present invention may include a substrate support part that supports a plurality of substrates and rotates about a rotation axis, a lead disposed on an upper side of the substrate support part, and a first gas injection unit coupled to the lead. The first gas injection unit includes a first electrode in which a plurality of protruding electrodes are combined, a second electrode in which a plurality of openings are formed at positions corresponding to the protruding electrodes, and the first gas injection unit allows the first gas to flow toward the substrate supporter. A first passage member formed on the electrode, a second passage member formed on the first electrode to be spaced apart from the first passage member along the rotation direction of the substrate supporter, and a second gas to be sprayed toward the substrate supporter flows. It may include a plurality of first conduit members formed on the first electrode. The first passage member and the second passage member may be arranged so that the distance between them increases as the first passage member and the second passage member extend from an inner direction toward the rotation axis of the substrate supporter toward an outer direction. The first conduit members may be disposed on both sides of the first conduit member along the rotation direction of the substrate supporter.

The substrate processing apparatus according to the present invention may include a substrate support part that supports a plurality of substrates and rotates about a rotation axis, a lead disposed on an upper side of the substrate support part, and a first gas injection unit coupled to the lead. The first gas injection unit is used to generate plasma and may include a first electrode in which a plurality of protruding electrodes are combined, and a second electrode in which a plurality of openings are formed at positions corresponding to the protruding electrodes. A plurality of first protruding electrodes arranged along a first row and a plurality of second protruding electrodes arranged along a second row may be coupled to the first electrode. The first protruding electrodes and the second protruding electrodes are arranged to be spaced apart from each other along the rotational direction of the substrate supporter around the rotational axis of the substrate supporter, and are disposed in an outward direction from the inner direction toward the rotational axis of the substrate supporter. They can be arranged so that the distance between them increases.
A substrate processing apparatus according to the present invention supports a plurality of substrates, a substrate support portion rotating about a rotation axis, a lead disposed on an upper side of the substrate support portion, a first gas injection portion coupled to the lead, and a substrate support portion of the substrate support portion. It may include a second gas injection unit coupled to the lead to be spaced apart from the first gas injection unit along the rotation direction of the substrate support unit about the rotation axis. The first gas injection unit includes a first electrode in which a plurality of protruding electrodes are combined, a second electrode in which a plurality of openings are formed at positions corresponding to the protruding electrodes, and the first gas injection unit allows the first gas to flow toward the substrate supporter. A first passage member formed on the electrode, a second passage member formed on the first electrode to be spaced apart from the first passage member along the rotation direction of the substrate supporter, and a second gas to be sprayed toward the substrate supporter flows. It may include a plurality of first conduit members formed on the first electrode. The first passage member and the second passage member may be arranged so that the distance between them increases as the first passage member and the second passage member extend from an inner direction toward the rotation axis of the substrate supporter toward an outer direction. The first conduit members may be disposed on both sides of the first conduit member along the rotation direction of the substrate supporter.

According to the present invention, the following effects can be achieved.

The present invention can improve the quality of the substrate by increasing the separation distance in the area where the pressure is lowered in the space between the gas injection unit and the substrate.

1 is a schematic perspective view of a substrate processing apparatus according to the present invention.
2 is a conceptual plan view of the substrate processing apparatus according to the present invention.
Figure 3 is a schematic side cross-sectional view taken along line I-I of Figure 1 in the substrate processing apparatus according to the present invention.
Figure 4 is a schematic cross-sectional view taken along line II-II of Figure 1 in the substrate processing apparatus according to the present invention.
5 and 6 are conceptual bottom views illustrating the first injection hole and the second injection hole in the substrate processing apparatus according to the present invention.
Figure 7 is a schematic cross-sectional view showing an enlarged portion A of Figure 6 in the substrate processing apparatus according to the present invention.
Figure 8 is a schematic side cross-sectional view taken along line I-I of Figure 1 for explaining the first conduit member in the substrate processing apparatus according to the present invention.
Figure 9 is a schematic cross-sectional view taken along line IV-IV of Figure 4 in the substrate processing apparatus according to the present invention.
10 is a conceptual diagram illustrating a plurality of flow members and a plurality of conduit members in the substrate processing apparatus according to the present invention.
Figure 11 is an exploded view showing the first electrode and the second electrode separated based on Figure 3
Figure 12 is a schematic cross-sectional view taken along line III-III of Figure 3 in the substrate processing apparatus according to the present invention.
13 is a conceptual bottom view of the first gas injection unit in the substrate processing apparatus according to the present invention.

Hereinafter, embodiments of a substrate processing apparatus according to the present invention will be described in detail with reference to the attached drawings.

Referring to FIG. 1, a substrate processing apparatus 1 according to the present invention performs a processing process on a substrate 200. For example, the substrate processing apparatus 1 according to the present invention can perform at least one of a deposition process for depositing a thin film on the substrate 200 and an etching process for removing a portion of the thin film deposited on the substrate 200. there is. For example, the substrate processing apparatus 1 according to the present invention can perform deposition processes such as CVD (Chemical Vapor Deposition) and ALD (Atomic Layer Deposition).

Referring to Figures 1 and 2, the substrate processing apparatus 1 according to the present invention includes a substrate support part 2 rotating about a rotation axis C, and a lead 3 disposed on the upper side of the substrate support part 2. , and a first gas injection unit (5) coupled to the lid (3). The first gas injection unit 5 includes a first passage member 511 through which the first gas to be injected toward the substrate support 2 flows, and a first passage member 511 along the rotation direction of the substrate support 2. It includes a second flow path member 512 spaced apart from the member 511.

The substrate processing apparatus 1 according to the present invention has the first passage member 511 and the second passage member 512 in the inner direction (ID arrow direction) toward the rotation axis C of the substrate support 2. They are arranged so that the distance between them increases as they extend outward in the outward direction (OD arrow direction). Accordingly, the substrate processing apparatus 1 according to the present invention uses the first gas injection unit 5 and the substrate 200 while the substrate 200 passes through the lower side of the first gas injection unit 5. The separation distance between parts where the pressure is lowered in the space between them can be increased. Looking at this in detail, it is as follows.

First, the substrate 200 is supported on the substrate supporter 2 and passes under the first gas injection portion 5 as the substrate supporter 2 rotates. In this process, the substrate 200 is placed on the lower side of the portion of the first gas injection portion 5 where the first flow path member 511 is located (hereinafter referred to as “first portion”), the first gas injection portion. In (5), the lower side of the part where the second flow path member 512 is located (hereinafter referred to as the “second part”), the part without the first flow path member 511 and the second flow path member 512 [ Hereinafter referred to as the “third part”], it passes through the lower part. The third part is disposed between the first part and the second part along the direction in which the substrate support part 2 rotates about the rotation axis C. When the substrate supporter 2 rotates clockwise around the rotation axis C, the substrate 200 is positioned below the first portion, below the third portion, and below the second portion. They pass through them one after another.

Next, when the substrate 200 passes through the lower side of the first part and the lower side of the second part, the pressure between the substrate 200 and the first gas injection unit 5 is, When passing through the third part, the pressure is implemented to be lower than that between the substrate 200 and the first gas injection unit 5. In the first part and the second part, the space between the substrate 200 and the first gas injection unit 5 is larger due to the first flow path member 511 and the second flow path member 512. Because it is implemented.

Next, when the substrate 200 passes through the lower side of the first gas injection unit 5, the outer portion located in the outer direction (OD arrow direction) is compared to the inner portion located in the inner direction (ID arrow direction). It moves at a faster speed.

Accordingly, in the comparative example in which the first passage member 511 and the second passage member 512 are arranged in parallel, the outer portion of the substrate 200 is smaller than the inner portion of the substrate 200. The time it takes to pass through the lower side of the second portion after passing through the lower side of the first portion becomes shorter. Therefore, in the comparative example, the first gas injected toward the substrate 200 through the first flow path member 511 is relatively larger in the outer portion of the substrate 200 than in the inner portion of the substrate 200. The lower the pressure, the faster it reaches the second part. Accordingly, in the comparative example, the flow rate of the first gas involved in the processing process is reduced in the outer portion of the substrate 200 compared to the inner portion of the substrate 200.

On the other hand, in the case of an embodiment in which the first passage member 511 and the second passage member 512 are arranged so that the distance between them increases as they extend in the outward direction (OD arrow direction), the substrate 200 The time taken for the outer part to pass under the first part and then pass under the second part is longer than that of the comparative example, compared to the inner part of the substrate. Therefore, in the embodiment, the first gas injected toward the substrate 200 through the first flow path member 511 has a relatively higher pressure in the outer portion of the substrate 200 than in the inner portion of the substrate 200. The lowered second portion is reached more slowly. Accordingly, in the embodiment, the flow rate of the first gas involved in the processing process increases in the outer portion of the substrate 200 compared to the inner portion of the substrate 200.

Accordingly, the substrate processing apparatus 1 according to the present invention is implemented so that the distance between the first flow member 511 and the second flow member 512 increases as they extend in the outward direction (OD arrow direction). As a result, the pressure in the space between the first gas injection unit 5 and the substrate 200 is lower than in the comparative example in which the first passage member 511 and the second passage member 512 are arranged parallel to each other. The separation distance of the losing part can be increased. Accordingly, the substrate processing apparatus 1 according to the present invention increases the flow rate of the first gas involved in the processing process in the outer portion of the substrate 200 compared to the inner portion of the substrate 200, thereby increasing the flow rate of the first gas involved in the processing process. The quality of the processed substrate 200 can be improved.

Hereinafter, the substrate support portion 2, the lead 3, and the first gas injection portion 5 will be described in detail with reference to the attached drawings.

The substrate support portion 2 supports the substrate 200. The substrate 200 may be placed on the substrate support portion 2. The substrate support portion 2 may be disposed below the lead 3. The substrate 200 may be placed on the upper surface of the substrate supporter 2. The substrate 200 may be a semiconductor substrate, a wafer, or the like. The substrate supporter 2 can support a plurality of substrates 200. The substrate support portion 2 may be formed in a disk shape.

The substrate support 2 may be coupled to the chamber 100. The chamber 100 provides a reaction space for processing the substrate 200. The substrate support part 2 may be disposed inside the chamber 100. The substrate support portion 2 may be rotatably coupled to the chamber 100 . In this case, the substrate support part 2 may be connected to a rotating part (not shown) that provides rotational force. The substrate support part 2 can rotate around the rotation axis C.

The lead 3 is disposed on the upper side of the substrate support part 2. The lead 3 may be installed at the top of the chamber 100 to cover the top of the chamber 100 and be electrically grounded. This lead (3) can support the gas injection means (4). A module installation portion 4a into which the gas injection means 4 is inserted may be formed on the lid 3. The gas injection means 4 can be supported by the lead 3 by being inserted into the module installation portion 4a. At this time, the module installation portion 4a may be formed in a radial form on the lead 3 so as to be spaced apart at the same angle with respect to the center of the lead 3.

The gas injection means (4) is coupled to the lid (3). The gas injection means (4) can be inserted into the module installation portion (4a) formed on the lid (3). The gas injection means 4 may be connected to the first gas injection unit 5A and the second gas injection unit 5B. The first gas and the second gas stored in each of the first gas injection unit 5A and the second gas injection unit 5B can be injected into the chamber 100 through the gas injection means 4. there is.

The first gas injection unit (5) is coupled to the lid (3). The first gas injection part 5 may be inserted into the module installation part 4a and coupled to the lead 3. The first gas injection unit 5 may spray the first gas toward the substrate supporter 2 in order to perform a processing process on the substrate 200 within the chamber 100.

The first gas may be a gas for performing a processing process on the substrate 200. The first gas may be a gas containing a thin film material to be deposited on the substrate 200. The first gas may be a mixed gas in which a gas for performing a processing process on the substrate 200 and a gas for generating plasma are mixed. The first gas may be a source gas containing a thin film material to be deposited on the substrate 200.

Referring to FIG. 3, the first gas injection unit 5 includes a first electrode 51, the first passage member 511, the second passage member 512, and the second electrode 52. can do.

The first electrode 51 may be located on the upper side of the substrate supporter 2. The first electrode 51 may be located above the second electrode 52. The first electrode 51 may be disposed to be spaced a predetermined distance upward from the second electrode 52. The first electrode 51 may be coupled to the inside of the chamber 100. The first electrode 51 may be coupled to the chamber 100 to be located at the top of the chamber 100. The first electrode 51 may be formed in an overall trapezoidal shape, but is not limited thereto and may be formed in another shape such as a disk shape.

The first electrode 51 can be used to generate plasma. RF (Radio Frequency) power may be applied to the first electrode 51 to generate plasma. A discharge may be generated by an electric field applied between the first electrode 51 and the second electrode 52 to generate plasma. The first electrode 51 may also serve as a ground.

A protruding electrode 51a may be coupled to the first electrode 51. The protruding electrode 51a may be coupled to the first electrode 51 so as to protrude toward the substrate supporter 2. The protruding electrode 51a may protrude from the lower surface of the first electrode 51. The protruding electrode 51a and the first electrode 51 may be formed integrally. When the first electrode 51 is grounded, the protruding electrode 51a can be grounded through the first electrode 51. When RF power is applied to the first electrode 51, RF power may be applied to the protruding electrode 51a through the first electrode 51.

The first flow path member 511 may be formed on the first electrode 51. The first flow member 511 may be formed in the first electrode 51 to allow the first gas to be sprayed toward the substrate supporter 2 to flow. The first passage member 511 may be formed to penetrate the first electrode 51.

The first flow member 511 may function as a passage for flowing the first gas injected from the first gas injection unit 5A. The first gas injected into the first passage member 511 may flow along the first passage member 511. The first flow member 511 may be implemented as a pipe, tube, etc. In this case, the first flow member 511 may be formed on the first electrode 51 to be disposed inside the first electrode 51. The first flow path member 511 may be implemented to be disposed inside the first electrode 51 by forming a groove inside the first electrode 51. The first gas flowing through the first flow path member 511 may be injected into the chamber 100 through the protruding electrode 51a.

The second flow path member 512 may be formed on the first electrode 51. The second flow path member 512 may be formed in the first electrode 51 to allow the first gas to be sprayed toward the substrate supporter 2 to flow. The second passage member 512 may be formed to penetrate the first electrode 51.

The second flow path member 512 may function as a passage for flowing the first gas injected from the first gas injection unit 5A. The first gas injected into the second passage member 512 may flow along the second passage member 512. The second flow member 512 may be implemented as a pipe, tube, etc. In this case, the second flow path member 512 may be formed on the first electrode 51 to be disposed inside the first electrode 51. The second passage member 512 may be implemented to be disposed inside the first electrode 51 by forming a groove inside the first electrode 51. The first gas flowing through the second passage member 512 may be injected into the chamber 100 through the protruding electrode 51a.

The second passage member 512 and the first passage member 511 may be arranged so that the distance between them increases as they extend in the outward direction (OD arrow direction). Accordingly, the substrate processing apparatus 1 according to the present invention can increase the separation distance of the portion where the pressure is lowered in the space between the first gas injection unit 5 and the substrate 200. Therefore, the substrate processing apparatus 1 according to the present invention increases the flow rate of the first gas involved in the processing process in the outer portion of the substrate 200, so that the substrate 200 that has undergone the processing process Quality can be improved.

Referring to FIG. 4 , the first electrode 51 may include a first gas injection member 513, a first injection hole 514, and a second injection hole 515.

The first gas injection member 513 may inject the first gas into the first flow path member 511 and the second flow path member 512. The first gas injection member 513 may be connected to each of the first flow path member 511 and the second flow path member 512. The first gas injection member 513 may be connected to the first gas injection unit 5A. The first gas supplied by the first gas injection unit 5A is to be distributed to each of the first flow path member 511 and the second flow path member 512 through the first gas injection member 513. You can. Accordingly, the substrate processing apparatus 1 according to the present invention uses one first gas injection member 513 to inject the first gas injection member 511 and the second passage member 512 into each of the first gas injection members 513. It can be implemented to supply gas.

Although not shown, the first gas injection member 513 may include a first gas injection hole through which the first gas flows to be injected into the first passage member 511 and the second passage member 512. You can. The first gas injection hole may be formed to penetrate the first gas injection member 513. The first gas injection hole may be connected to each of the first flow path member 511 and the second flow path member 512.

The first injection hole 514 may be formed to penetrate the protruding electrode 51a to be connected to the first flow path member 511. The first injection hole 514 sprays the first gas toward the substrate support portion 2. The first gas flowing along the first flow path member 511 may be injected toward the substrate support part 2 through the first injection hole 514. The first injection hole 514 may be formed such that one end is connected to the first passage member 511 and the other end penetrates the protruding electrode 51a.

The first injection holes 514 may be implemented in plural numbers. The first injection holes 514 may be spaced apart from each other and connected to the first flow path member 511. The first injection holes 514 may be formed parallel to the first flow path member 511. Among the first injection holes 514, the first injection hole 514, which is spaced apart from the first gas injection member 513 by the shortest distance, has a first distance 514L from the first gas injection member 513. ) can be placed in a spaced location.

The first injection holes 514 may be arranged at a first interval T1 along the first flow path member 511 so as to be spaced apart from each other at equal intervals. The first injection holes 514 may be arranged to be spaced apart at different intervals along the first flow path member 511. For example, the first injection holes 514 are arranged so that the distance between them increases while extending in the outward direction (OD arrow direction, shown in FIG. 5) along the first flow path member 511, or the first injection holes 514 are disposed so that the distance between them increases. They may be arranged so that the distance between them narrows while extending along the flow path member 511 in the outward direction (OD arrow direction, shown in FIG. 5).

The second injection hole 515 may be formed to penetrate the protruding electrode 51a to be connected to the second flow path member 512. The second injection hole 515 sprays the first gas toward the substrate support portion 2. The first gas flowing along the second flow path member 512 may be injected toward the substrate support part 2 through the second injection hole 515. The second injection hole 515 may be formed so that one end is connected to the second passage member 512 and the other end penetrates the protruding electrode 51a.

The second injection holes 515 may be implemented in plural numbers. The second injection holes 515 may be spaced apart from each other and connected to the second flow path member 512. The second injection holes 515 may be formed parallel to the second flow path member 512.

The second injection holes 515 may be arranged to be spaced apart from each other at equal intervals along the second flow path member 512 . The second injection holes 515 may be arranged to be spaced apart from each other at different intervals along the second flow path member 512 . For example, the second injection holes 515 are arranged so that the distance between them increases while extending in the outward direction (OD arrow direction, shown in FIG. 5) along the second flow path member 512, or the second injection holes 515 They may be arranged to extend along the flow path member 512 in the outward direction (OD arrow direction, shown in FIG. 5) so that the gap between them narrows.

Referring to FIG. 5, the second injection holes 515 and the first injection holes 514 extend in the outward direction (OD arrow direction) with the rotation axis C of the substrate support 2 as the center. It can be placed on concentric circles having the same radius. The second injection holes 515 are arranged to be spaced apart at a second interval T2 along the second passage member 512, and the first injection holes 514 are disposed along the second passage member 512 to be spaced apart from each other at a second interval T2. Accordingly, they may be arranged to be spaced apart at the second interval T2.

Referring to FIG. 6, the second injection holes 515 and the first injection holes 514 rotate the substrate support 2 around the rotation axis C of the substrate support 2. Accordingly, they may be placed in positions that are offset from each other. In this case, the second injection holes 515 are arranged to be spaced apart from each other at the first interval T1 along the second passage member 512, and the first injection holes 514 are located along the second passage member 512. They may be arranged to be spaced apart from each other at the first interval T1 along 511 . As shown in FIG. 6, the first interval T1 may be formed to be longer than the second interval T2.

Accordingly, the substrate processing apparatus 1 according to the present invention is compared to the comparative example in which the second injection holes 515 and the first injection holes 514 are arranged on concentric circles having the same radius, It can be implemented to further increase the separation distance between each of the second injection holes 515 and the first injection holes 514. Therefore, the substrate processing apparatus 1 according to the present invention can improve the ease of processing for forming the second injection holes 515 and the first injection holes 514.

Referring to FIG. 6, the second injection holes 515 are arranged in a concentric circle with a radius of M (M is a real number greater than 0) with the rotation axis C of the substrate support 2 as the center. The first injection holes 514 may be arranged on concentric circles with a radius of N (N is a real number greater than 0) centered on the rotation axis C of the substrate supporter 2. Here, M may be a real number larger than N. Accordingly, the substrate processing apparatus 1 according to the present invention can be implemented to increase the separation distance between each of the second injection holes 515 and the first injection holes 514. RM1, RM2, and RM3 shown in FIG. 6 correspond to the radii of the second injection holes 515, and RN1, RN2, and RN3 correspond to the radii of the first injection holes 514.

Referring to FIG. 7, among the second injection holes 515, the second injection hole 515, which is spaced apart from the first gas injection member 513 by the shortest distance, is separated from the first gas injection member 513. They may be placed at locations spaced apart by a second distance (515L) that is longer than the first distance (514L). In this case, the first injection holes 514 are arranged to be spaced apart at a first interval T1 along the first passage member 511, and the second injection holes 515 are arranged along the first passage member 511 to be spaced apart from each other at a first interval T1. ) may be arranged to be spaced apart from each other at the first interval T1. Accordingly, the substrate processing apparatus 1 according to the present invention can be implemented to increase the separation distance between each of the second injection holes 515 and the first injection holes 514.

Referring to Figures 8 and 9, the first gas injection unit 5 may include a second gas injection member 516, a first pipe member 517, and a second pipe member 518.

The second gas injection member 516 may inject the second gas into the first piping member 517 and the second piping member 518. The second gas injection member 516 may be connected to each of the first piping member 517 and the second piping member 518. The second gas injection member 516 may be connected to the second gas injection unit 5B. The second gas stored in the second gas injection unit (5B) can be distributed to each of the first pipe member (517) and the second pipe member (518) through the second gas injection member (516). there is. Accordingly, the substrate processing apparatus 1 according to the present invention uses one second gas injection member 516 to inject the second gas into each of the first pipe member 517 and the second pipe member 518. It can be implemented to supply gas.

The second gas may be a gas for performing a processing process on the substrate 200. The second gas may be a gas containing a thin film material to be deposited on the substrate 200. The second gas may be a mixed gas in which a gas for performing a processing process on the substrate 200 and a gas for generating plasma are mixed. The second gas may be a reactant gas that reacts with the above-described source gas to deposit the thin film material contained in the source gas on the substrate 200.

Although not shown, the second gas injection member 516 may include a second gas injection hole to inject the second gas into the first pipe member 517 and the second pipe member 518. . The second gas injection hole may be formed to penetrate the second gas injection member 516. The second gas injection hole may be connected to each of the first pipe member 517 and the second pipe member 518.

The first conduit member 517 may be formed on the first electrode 51. The first conduit member 517 may be formed in the first electrode 51 to allow the second gas to be sprayed toward the substrate supporter 2 to flow. The first conduit member 517 may be formed to penetrate the first electrode 51.

The first pipe member 517 may function as a passage for flowing the second gas injected from the second gas injection unit 5B. The second gas injected into the first piping member 517 may flow along the first piping member 517. The first piping member 517 may be implemented as a pipe, tube, etc. In this case, the first conduit member 517 may be formed on the first electrode 51 to be disposed inside the first electrode 51. The first conduit member 517 may be implemented to be disposed inside the first electrode 51 by forming a groove inside the first electrode 51.

The first pipe member 517 may be implemented in plural pieces. The first conduit members 517 may be formed in the first electrode 51 to allow the second gas to be sprayed toward the substrate supporter 2 to flow. The first pipe members 517 may be arranged parallel to each other.

As shown in FIG. 9, the first conduit members 517 and 517' may be disposed on both sides of the first conduit member 511 along the rotation direction of the substrate supporter 2. Accordingly, the substrate processing apparatus 1 according to the present invention is designed to prevent the first gas and the second gas from mixing with each other within the first electrode 51 before being sprayed into the chamber 100. It can be implemented. Therefore, the substrate processing apparatus 1 according to the present invention is implemented so that the first gas and the second gas are mixed within the chamber 100, thereby preventing the flow rate of the gas involved in the processing process from decreasing. The quality of the substrate 200 can be improved.

The second conduit member 518 may be formed on the first electrode 51 to be spaced apart from the first conduit member 517 along the rotation direction of the substrate support unit 2. The second conduit member 518 may be formed on the first electrode 51 to allow the second gas to be sprayed toward the substrate supporter 2 to flow. The second conduit member 518 may be formed to penetrate the first electrode 51.

The second pipe member 518 may function as a passage for flowing the second gas injected from the second gas injection unit 5B. The second gas injected into the second pipe member 518 may flow along the second pipe member 518. The first piping member 517 may be implemented as a pipe, tube, etc. In this case, the second conduit member 518 may be formed on the first electrode 51 to be disposed inside the first electrode 51. The second conduit member 518 may be implemented to be disposed inside the first electrode 51 by forming a groove inside the first electrode 51.

The second pipe member 518 may be implemented in plural pieces. The second conduit members 518 may be formed on the first electrode 51 to allow the second gas to be sprayed toward the substrate supporter 2 to flow. The second pipe members 518 may be arranged parallel to each other.

As shown in FIG. 9, the second conduit members 518 and 518' may be disposed on both sides of the first conduit member 511 along the rotation direction of the substrate supporter 2. Accordingly, the substrate processing apparatus 1 according to the present invention can prevent the first gas and the second gas from mixing with each other within the first electrode 51 before being sprayed into the chamber 100. .

Although not shown, the second pipe members 518 and the first pipe members 517 may include a plurality of second passage injection holes and a plurality of first passage injection holes, respectively. The second passage injection hole spaced apart from the second gas injection member 516 at the shortest distance is spaced at a longer distance than the first passage injection hole spaced from the second gas injection member 516 at the shortest distance. It can be. In this case, the second passage injection holes and the first passage injection holes may be arranged to be spaced apart at equal intervals. Therefore, the substrate processing apparatus 1 according to the present invention can improve the ease of processing for forming the second passage injection holes and the first passage injection holes.

The second pipe members 518, 518' and the first pipe members 517, 517' are arranged so that the distance between them increases as they extend in the outward direction (OD arrow direction, shown in FIG. 2). It can be. At this time, the first passage member 511 is closer to the first passage members 517 and 517' than the distance SL1 separated from the second passage member 512 along the rotation direction of the substrate supporter 2. ) is disposed at a position where the distance (SL2, SL2') is shorter, and the second passage member 512 is spaced apart from the first passage member 511 along the rotation direction of the substrate supporter 2. The distances (SL3, SL3') from the second pipe members (518, 518') may be shorter than the distance (SL1).

Accordingly, in contrast to the comparative example in which the second pipe members 518, 518' and the first pipe members 517, 517' are arranged parallel to each other, the first gas injection unit 5 and The separation distance in the space between the substrates 200 where the pressure is lower can be increased. Accordingly, the substrate processing apparatus 1 according to the present invention increases the flow rate of the second gas involved in the processing process in the outer portion of the substrate 200 compared to the inner portion of the substrate 200, thereby increasing the flow rate of the second gas involved in the processing process. The quality of the processed substrate 200 can be improved.

The above has explained that the first gas injection unit 5 includes the first flow path member 511 and the second flow path member 512, but this is an example, and the outer direction (OD arrow direction, FIG. (shown in 2) may include a plurality of flow path members with increasing spacing between them. In addition, the first gas injection unit 5 has been described as including the first piping member 517 and the second piping member 518, but this is an example, and the outer direction (OD arrow direction, Figure 2 (shown in) may include a plurality of pipe members with increasing spacing between them.

As shown in Figure 10, according to one embodiment of the present invention, the first gas injection unit 5 includes a first flow path member 501, a second flow path member 502, and a third flow path member 503. In addition, it may include first pipe members (504, 504'), second pipe members (505, 505'), and third pipe members (506, 506').

As the first passage member 501, the second passage member 502, and the third passage member 503 extend in the outward direction (direction of arrow OD), the distance between them may increase.

The first conduit members (504, 504'), the second conduit members (505, 505'), and the third conduit members (506, 506') are respectively the first conduit member (501), It may be disposed on both sides of the second flow path member 502 and the third flow path member 503.

The first pipe members (504, 504'), the second pipe members (505, 505'), and the third pipe members (506, 506') extend in the outward direction (OD arrow direction). As time goes on, the gap between them can increase.

Referring to Figures 2 and 11, the second electrode 52 is located between the first electrode 51 and the substrate support part 2. The second electrode 52 may be located below the first electrode 51 and above the substrate support part 2. The second electrode 52 may be disposed to be spaced a predetermined distance upward from the substrate supporter 2. The second electrode 52 may be disposed inside the chamber 100. The second electrode 52 may be formed in an overall trapezoidal shape, but is not limited to this and may be formed in other shapes such as a disk shape.

The second electrode 52 can be used to generate plasma. RF (Radio Frequency) power may be applied to one of the second electrode 52 and the first electrode 51, and the other may be ground. Accordingly, a discharge may be generated by an electric field applied between the second electrode 52 and the first electrode 51 to generate plasma. RF power is applied to the second electrode 52. The first electrode 51 may be grounded. The second electrode 52 may be grounded, and RF power may be applied to the first electrode 51.

An opening 52a may be formed in the second electrode 52. The opening 52a may be formed to penetrate the second electrode 52. The opening 52a may be formed to penetrate the upper and lower surfaces of the second electrode 52. The opening 52a may be formed in an overall cylindrical shape, but is not limited thereto and may be formed in another shape such as a rectangular parallelepiped shape.

A plurality of openings 52a may be formed in the second electrode 52. The openings 52a may be arranged at positions spaced apart from each other. In this case, a plurality of protruding electrodes 51a may be coupled to the first electrode 51. The protruding electrodes 51a may be disposed at positions spaced apart from each other. The openings 52a may be disposed at positions corresponding to the protruding electrodes 51a. Accordingly, the protruding electrodes 51a may protrude toward the openings 52a. The protruding electrodes 51a may protrude to a length inserted into the openings 52a. Although not shown, the protruding electrodes 51a may protrude to a length that does not allow them to be inserted into the openings 52a. In this case, the protruding electrodes 51a may be located above the openings 52a.

Referring to FIG. 12, the second electrode 52 may include a first pressing member 521.

The first pressing member 521 may be arranged to be located between the first flow path member 511 and the second flow path member 512 along the rotation direction of the substrate support member 2. The first pressing member 521 may pressurize the first gas existing between the first gas injection unit 5 and the substrate 200 toward the substrate 200. Accordingly, the substrate processing apparatus 1 according to the present invention supplies the first gas while the substrate 200 passes sequentially under the first part, under the third part, and under the second part. It can be maintained at a high pressure on the lower side of the third part. Therefore, the substrate processing apparatus 1 according to the present invention is implemented to increase the pressure of the first gas involved in the processing process between the first gas injection unit 5 and the substrate 200, The quality of the substrate 200 that has undergone the processing process can be improved.

Referring to FIG. 12, the first pressing member 521 may include a first pressing surface 521a facing the substrate support part 2. The first pressing surface 521a may correspond to the lower surface of the first pressing member 521.

The first pressure surface 521a may be arranged so that its area increases as it extends in the outward direction (direction of arrow OD). Accordingly, the substrate processing apparatus 1 according to the present invention reduces the substrate 200 compared to the inner portion of the substrate 200 while the substrate 200 passes through the lower side of the first gas injection unit 5. The flow rate of the first gas involved in the treatment process can be maintained high in the outer portion of . Looking at this in detail, it is as follows.

First, while the substrate 200 passes under the first gas injection unit 5, the outer portion of the substrate 200 moves at a faster speed than the inner portion of the substrate 200. Accordingly, the exposure time for each region of the substrate 200 to the first gas is shorter for the outer portion of the substrate 200 than for the inner portion of the substrate 200.

Next, a comparative example in which the area of the first pressing surface 521a is arranged to be the same as it extends in the outward direction (OD arrow direction) is provided in the inner portion of the substrate 200 and the outer portion of the substrate 200. It is implemented to pressurize the first gas equally. Accordingly, the comparative example is implemented so that the flow rate of the first gas involved in the processing process is reduced in the outer portion of the substrate 200 compared to the inner portion of the substrate 200.

In contrast, in an embodiment in which the first pressure surface 521a is arranged so that the area increases as it extends in the outward direction (OD arrow direction), the outer portion of the substrate 200 is larger than the inner portion of the substrate 200. It may be implemented to maintain a high pressure of the first gas in the portion. Accordingly, the embodiment is implemented so that the flow rate of the first gas involved in the processing process increases in the outer portion of the substrate 200 compared to the inner portion of the substrate 200. When the processing process is a deposition process, the embodiment can improve the deposition rate of the first gas on the substrate 200.

Accordingly, the substrate processing apparatus 1 according to the present invention is implemented so that the area increases as the first pressure surface 521a extends in the outward direction (OD arrow direction), so that the inside of the substrate 200 The flow rate of the first gas involved in the processing process can be maintained high in the outer portion of the substrate 200 compared to the outer portion. Therefore, the substrate processing apparatus 1 according to the present invention not only increases the pressure of the first gas between the first gas injection unit 5 and the substrate 200 through the first pressing member 521. In addition, by increasing the flow rate of the first gas involved in the processing process at the outer part of the substrate 200 through the first pressure surface 521a, the quality of the substrate 200 that has undergone the processing process is further improved. It can be improved.

Referring to FIG. 13, the second electrode 52 may include a second electrode member 522, an insulating member 523, and a ground electrode 524.

The second electrode member 522 may be disposed outside the protruding electrodes 51a along each of the first flow path member 511 and the second flow path member 512. The second electrode member 522 is made of a conductive material and can be used to generate plasma together with the protruding electrode 51a and the first electrode 51. The second electrode member 522 may be implemented in plural pieces.

The insulating member 523 may be arranged to surround the second electrode member 522. The insulating member 523 may be made of an insulating material. The insulating member 523 may electrically insulate the second electrode member 522 and the ground electrode 524. The insulating member 523 may be implemented in plural pieces. The insulating members 523 may be arranged to surround each of the second electrode members 522.

The ground electrode 524 may be disposed between the insulating members 523 along the rotation direction of the substrate supporter 2. Accordingly, the substrate processing apparatus 1 according to the present invention electrically insulates the ground electrode 524 and the second electrode member 522, thereby forming the second electrode member 522 and the protruding electrode 51a. It can be implemented so that plasma is formed in the space between them. Therefore, the substrate processing apparatus 1 according to the present invention prevents the substrate 200 from being damaged by the plasma by limiting the plasma to be formed only in a certain area, thereby preventing the substrate 200 from being damaged by the processing process. Quality can be improved.

Referring again to FIG. 1, the substrate processing apparatus 1 according to the present invention may include a second gas injection unit 6. The second gas injection unit 6 is the lead ( 3) can be combined.

In Figure 1, the substrate processing apparatus 1 according to the present invention includes the first gas injection unit 5, the second gas injection unit 6, the third gas injection unit 7, and the fourth gas injection unit. Although shown as including (8), this is an example, and the gas injection means (4) may include a plurality of gas injection units. Each of the plurality of gas injection units included in the gas injection means 4 may be implemented to match each other.

Referring to FIG. 13, the substrate processing apparatus 1 according to a modified embodiment of the present invention includes the substrate support 2 rotating around a rotation axis C, and the substrate support 2 disposed on the upper side of the substrate support 2. It includes a lead (3) and a first gas injection unit (5) coupled to the lead (3). Since the substrate support part 2, the lead 3, and the first gas injection part 5 are implemented to substantially match those described above, detailed descriptions will be omitted.

The first electrode 51 according to a modified embodiment of the present invention may be implemented as follows.

The first electrode 51 includes a plurality of first protruding electrodes 51a' arranged along the first row (RW1) and a plurality of second protruding electrodes 51a'' arranged along the second row (RW2). ) can be combined.

The first protruding electrodes 51a' and the second protruding electrodes 51a'' are spaced apart from each other along the rotation direction of the substrate support 2 around the rotation axis C of the substrate support 2. When disposed, the more it is disposed in the outer direction (OD arrow direction, shown in FIG. 13) from the inner direction (ID arrow direction, shown in FIG. 13) toward the rotation axis C of the substrate support unit 2. They may be arranged so that the distance between them increases. Accordingly, the substrate processing apparatus 1 according to the present invention can increase the separation distance of the portion where the pressure is lowered in the space between the first gas injection unit 5 and the substrate 200. Therefore, the substrate processing apparatus 1 according to the present invention increases the flow rate of the first gas involved in the processing process in the outer portion of the substrate 200, so that the substrate 200 that has undergone the processing process Quality can be improved.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible without departing from the technical spirit of the present invention. It will be clear to those who have knowledge.

1: Substrate processing device 2: Substrate support
3: Lead 4: Gas injection means
5: 1st gas injection unit 6: 2nd gas injection unit
7: 3rd gas injection unit 8: 4th gas injection unit
51: first electrode 52: second electrode
100: Process chamber 200: Substrate

Claims (8)

A substrate support portion that supports a plurality of substrates and rotates about a rotation axis;
a lead disposed on an upper side of the substrate support portion; and
It includes a first gas injection unit coupled to the lead,
The first gas injection unit,
a first electrode in which a plurality of protruding electrodes are combined;
a second electrode having a plurality of openings formed at positions corresponding to the protruding electrodes;
a first flow member formed on the first electrode to allow a first gas to be sprayed toward the substrate supporter to flow;
a second passage member formed on the first electrode to be spaced apart from the first passage member along the rotation direction of the substrate support unit; and
It includes a plurality of first conduit members formed on the first electrode to allow a second gas to flow toward the substrate support portion,
The first passage member and the second passage member are arranged so that the distance between them increases as the first passage member and the second passage member extend from the inner direction toward the rotation axis of the substrate supporter toward the outer side,
The first conduit members are disposed on both sides of the first conduit member along the rotation direction of the substrate support part,
A substrate processing apparatus comprising a second gas injection unit coupled to the lead to be spaced apart from the first gas injection unit along the rotation direction of the substrate support unit. According to paragraph 1,
The first electrode is a first gas injection member for injecting the first gas into the first passage member and the second passage member, and a plurality of first gases formed through the protruding electrode to be connected to the first passage member. It includes a hole and a plurality of second injection holes formed through the protruding electrode to be connected to the second flow path member,
Among the first injection holes, the first injection hole spaced apart from the first gas injection member by the shortest distance is disposed at a position spaced apart from the first gas injection member by a first distance,
Among the second injection holes, the second injection hole spaced apart from the first gas injection member by the shortest distance is disposed at a position spaced from the first gas injection member by a second distance that is longer than the first distance. Characterized by a substrate processing device. According to paragraph 2,
The first injection holes are arranged to be spaced apart at a first interval along the first flow path member,
A substrate processing apparatus, wherein the second injection holes are arranged to be spaced apart from each other at the first interval along the second flow path member. According to paragraph 1,
The first electrode includes a plurality of first injection holes formed through the protruding electrode to be connected to the first passage member, and a plurality of second injection holes formed through the protruding electrode to be connected to the second passage member. Contains,
The first injection holes and the second injection holes are arranged at positions offset from each other along the rotation direction of the substrate supporter around the rotation axis of the substrate supporter. According to paragraph 1,
The first electrode includes a plurality of first injection holes formed through the protruding electrode to be connected to the first passage member, and a plurality of second injection holes formed through the protruding electrode to be connected to the second passage member. Contains,
The first injection holes are arranged on concentric circles with a radius of N (N is a real number greater than 0) centered on the rotation axis of the substrate support,
The second injection holes are arranged in concentric circles with a radius of M (M is a real number greater than N) with the rotation axis of the substrate support as the center. According to paragraph 1,
The first gas injection unit includes a plurality of second pipe members formed on the first electrode to be spaced apart from the first pipe members along the rotation direction of the substrate support unit,
The first passage member is disposed at a position where the distance apart from the first passage members is shorter than the distance apart from the second passage member along the rotation direction of the substrate support,
The second flow path member is disposed at a position where the distance spaced apart from the second channel members is shorter than the distance spaced apart from the first flow channel member along the rotation direction of the substrate support member,
A substrate processing apparatus, wherein the first pipe members and the second pipe members are arranged so that the distance between them increases as they extend in the outward direction. According to paragraph 1,
The second electrode includes a first pressing member disposed between the first flow path member and the second flow path member along the rotation direction of the substrate support member,
The first pressing member includes a first pressing surface facing the substrate support,
A substrate processing apparatus, wherein the first pressure surface is arranged so that its area increases as it extends in the outward direction. A substrate support portion that supports a plurality of substrates and rotates about a rotation axis;
a lead disposed on an upper side of the substrate support portion; and
It includes a first gas injection unit coupled to the lead,
The first gas injection unit is used to generate plasma and includes a first electrode in which a plurality of protruding electrodes are combined, and a second electrode in which a plurality of openings are formed at positions corresponding to the protruding electrodes,
A plurality of first protruding electrodes arranged along a first row and a plurality of second protruding electrodes arranged along a second row are coupled to the first electrode,
The first protruding electrodes and the second protruding electrodes are arranged to be spaced apart from each other along the rotational direction of the substrate supporter around the rotational axis of the substrate supporter, and are disposed in an outward direction from the inner direction toward the rotational axis of the substrate supporter. They are arranged so that the distance between them increases as they become larger,
A substrate processing apparatus comprising a second gas injection unit coupled to the lead to be spaced apart from the first gas injection unit along the rotation direction of the substrate support unit.

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