KR102583947B1 - Deposition system for superconductor - Google Patents

Abstract

The present invention relates to a deposition apparatus for superconductors, which includes a draw-out portion in which a wire portion is wound, a plurality of chamber portions for passing the wire discharged from the draw-out portion and spaced apart so that an individual deposition process can be performed, and recovering the wire portion that has passed through the chamber portion. It includes a recovery part and a connection part disposed between the plurality of chamber parts to surround the wire part and maintain the process environment of each of the plurality of chamber parts.

Description

Deposition equipment for superconductors {DEPOSITION SYSTEM FOR SUPERCONDUCTOR}

The present invention relates to a deposition apparatus for superconductors, and more specifically, to a deposition apparatus for superconductors in which the deposition process is performed for each partitioned chamber, so that maintenance of each chamber can be quickly performed and the deposition rate can be improved. .

In general, superconductivity refers to the phenomenon in which a material loses its electrical resistance under specific conditions, and the temperature at which superconductivity occurs can vary depending on the type of metal or compound.

Depending on the low-temperature critical temperature, it is divided into low-temperature superconductors (liquid helium temperature) and high-temperature superconductors (liquid nitrogen). High-temperature superconductor (HTS) consists of a substrate, an intermediate layer (buffer layer), a superconducting layer, and a protective layer. At this time, the substrate is a metal body, and the buffer layer may consist of 2 to 5 layers depending on the characteristics.

The substrate mainly includes Hastelloy or stainless steel, and the buffer layer deposited on the substrate includes an anti-diffusion layer, a seed layer, an IBAD layer, a homoepilayer, and a strain matching layer. Additionally, a superconducting layer is provided to cover the buffer layer, and a silver protective layer is provided to cover the superconducting layer.

Meanwhile, conventionally, a buffer layer is deposited as a superconducting wire passes through the inside of a chamber, but the movement speed of the wire is slow to deposit at a set thickness, resulting in low productivity, and the entire process is stopped for maintenance and repair of some deposition equipment. There is a problem. Therefore, there is a need to improve this.

The background technology of the present invention is published in Korean Patent Publication No. 10-2012-0034123 (published on April 9, 2012, title of the invention: Organometallic chemical vapor deposition method and device for producing multilayer high-temperature superconducting coated tape).

The present invention was devised to improve the above problems, and provides a deposition apparatus for superconductors that allows the deposition process to be performed for each partitioned chamber, allows rapid maintenance of individual chambers, and improves the deposition rate. It has a purpose.

The deposition apparatus for superconductors according to the present invention includes: a draw-out portion around which a wire portion is wound; a plurality of chamber parts spaced apart to allow the wire part discharged from the draw-out part to pass through and to perform an individual deposition process; a recovery unit that recovers the wire portion that has passed through the chamber unit; and a connection part disposed between the plurality of chamber parts, surrounding the wire part, and maintaining the process environment of each of the plurality of chamber parts.

The chamber portion includes a chamber case portion that passes the wire portion; a chamber roller unit built in the chamber case unit and guiding the wire unit to be wound and moved at least once; and a chamber deposition unit built into the chamber case unit and depositing the wire part.

The chamber case portion forms a deposition space and includes a case space portion that can be opened and closed; a case inlet formed on one side of the case space, into which the wire part flows; and a case outlet portion formed on the other side of the case space portion and through which the wire portion is discharged.

The chamber roller portion includes a roller entrance guide portion that guides the wire portion flowing into the chamber case portion; a roller outlet guide portion that guides the wire portion discharged from the chamber case portion; and a roller process unit disposed between the roller entrance guide unit and the roller outlet guide unit, and guiding the wire unit to be wound and moved at least once.

The connecting portion includes a connecting duct portion disposed between the chamber portions, connecting the adjacent chamber portions and passing the wire portion; a connection discharge portion formed in the connection duct portion and discharging air inside the connection duct portion to the outside; and a connection delay part formed inside the connection duct part, passing the wire part, and delaying the movement of deposition material and internal gas between the adjacent chamber parts.

The connecting duct portion may be capable of moving up and down, left and right, according to the movement path of the wire portion.

The connection delay portion may include a plurality of delay protrusions extending in an inward direction from the inner wall of the connection duct portion.

The connection delay part includes a delay pipe part built into the connection duct part, passing the wire part, and having a plurality of opening holes formed therein; a plurality of delay baffle parts protruding inside the delay pipe; and a delay control unit mounted on the connection duct and adjusting the mounting position of the delay pipe unit to correspond to the position of the wire unit.

The connection delay unit can prevent frequency interference caused by the use of high-frequency power.

The connection portion may further include a connection opening/closing portion formed in the connection duct portion and capable of opening and closing.

In the deposition apparatus for superconductors according to the present invention, the wire portion drawn out from the draw-out portion is recovered to the recovery portion and can be deposited while sequentially passing through a plurality of chamber portions disposed between the draw-out portion and the recovery portion. At this time, since the wire portion is wound around the chamber portion more than once, the deposition time for the wire portion increases in the limited internal space of the chamber portion, thereby reducing the overall facility size.

1 is a diagram schematically showing a deposition apparatus for a superconductor according to an embodiment of the present invention.
Figure 2 is a plan view schematically showing a state in which the wire portion is continuously wound to the right of the chamber portion according to an embodiment of the present invention.
Figure 3 is a plan view schematically showing a state in which the wire portion is continuously wound toward the left in the chamber portion according to an embodiment of the present invention.
Figure 4 is a plan view schematically showing a state in which the wire portion is continuously wound alternately in the right and left directions of the chamber portion according to an embodiment of the present invention.
Figure 5 is a diagram schematically showing a chamber unit according to an embodiment of the present invention.
Figure 6 is a diagram schematically showing a chamber case portion according to an embodiment of the present invention.
Figure 7 is a diagram schematically showing a chamber roller portion according to an embodiment of the present invention.
Figure 8 is a diagram schematically showing a connection part according to an embodiment of the present invention.
Figure 9 is a diagram schematically showing a connection delay unit according to the first embodiment of the present invention.
Figure 10 is a diagram schematically showing a connection delay unit according to a second embodiment of the present invention.
Figure 11 is a diagram schematically showing a state in which frequency interference is prevented by a connection unit according to an embodiment of the present invention.

Hereinafter, an embodiment of a superconductor deposition apparatus according to the present invention will be described with reference to the attached drawings. In this process, the thickness of lines or sizes of components shown in the drawings may be exaggerated for clarity and convenience of explanation. In addition, the terms described below are terms defined in consideration of functions in the present invention, and may vary depending on the intention or custom of the user or operator. Therefore, definitions of these terms should be made based on the content throughout this specification.

1 is a diagram schematically showing a deposition apparatus for a superconductor according to an embodiment of the present invention. Referring to FIG. 1, a superconductor deposition apparatus 1 according to an embodiment of the present invention may include an extraction unit 10, a chamber unit 20, and a recovery unit 30.

A wire portion 90 is wound around the draw-out portion 10. For example, a metal film is used as the wire portion 90, and the wire portion 90 can be unwound by rotating at a set speed while wound around the draw-out portion 10.

The plurality of chamber parts 20 may pass the wire part 90 discharged from the draw-out part 10 and be spaced apart so that individual deposition processes can be performed. For example, the plurality of chamber parts 20 may be arranged in a row, and the buffer layer deposition may be performed while the wire parts 90 sequentially pass through each chamber part 90.

The recovery unit 30 may recover the wire unit 90 that has passed through the chamber unit 20. For example, the recovery unit 30 may wind the deposited wire unit 90 while the roll rotates.

At this time, each chamber portion 20 may induce deposition while the wire portion 90 is wound and moved one or more times. For example, if the wire parts 90 are wound so as not to overlap each other, deposition time can be secured while the wire parts 90 are wound and moved several times. Because of this, even if the left and right lengths of the chamber portion 20 are narrow, sufficient deposition space can be secured.

Meanwhile, the chamber portion 20 includes a first chamber portion 100, a second chamber portion 200, a third chamber portion 300, a fourth chamber portion 400, and a fifth chamber portion according to the type of deposition. It may include a chamber portion 500.

The first chamber part 100 can deposit a first layer on the wire part 90. The first layer may be a diffusion prevention layer that prevents nickel or chromium metal from diffusing from the deposition surface in one direction of the wire portion 90. The first chamber portion 100 may be deposited using a sputtering method. A plurality of first chamber units 100 may be arranged in succession as needed.

The second chamber portion 200 may deposit a second layer on the wire portion 90 on which the first layer was deposited. The second layer may be a seed layer that provides a surface for generating crystal nuclei in the third layer. The second chamber portion 200 is deposited using a sputtering method, and yttrium oxide may be used as a deposition material. A plurality of second chamber units 200 may be arranged in succession as needed.

The third chamber portion 300 may deposit a third layer on the wire portion 90 on which the second layer was deposited. Since the third layer can be formed as a thin film depending on the crystal orientation, it can be an IBAD layer that provides biaxial orientation to the superconducting layer. The third chamber portion 300 is deposited using the IBAD method, and magnesium oxide may be used as a deposition material. A plurality of third chamber units 300 may be arranged in succession as needed.

The fourth chamber portion 400 may deposit a fourth layer on the wire portion 90 on which the third layer was deposited. The fourth layer may be a homo-epi layer that improves the biaxial orientation of the third layer. The fourth chamber portion 400 is deposited using the E-Beam Evaporation method, and magnesium oxide can be used as the deposition material. A plurality of fourth chamber units 400 may be arranged in succession as needed.

The fifth chamber portion 500 may deposit the fifth layer on the wire portion 90 on which the fourth layer was deposited. The fifth layer can be a strain matching layer that reduces mismatch between the superconducting layer and the fourth layer. The fifth chamber portion 500 is deposited using a sputtering method, and lanthanum manganese oxide may be used as a deposition material. A plurality of fifth chamber units 500 may be arranged in succession as needed.

Figure 2 is a plan view schematically showing a state in which the wire part is continuously wound in the right direction around the chamber part according to an embodiment of the present invention, and Figure 3 is a state in which the wire part is continuously wound in the left direction in the chamber part according to an embodiment of the present invention. This is a floor plan that schematically shows the condition. Referring to FIGS. 2 and 3 , the wire portion 90 that is wound and moved around the plurality of chamber portions 20 may be wound in one direction. That is, when looking at the movement of the wire portion 90 in a plane, the wire portion 90 can be continuously wound in the right direction around each chamber portion 20 (see FIG. 2). In addition, when looking at the movement of the wire portion 90 in a plane, the wire portion 90 can be continuously wound toward each chamber portion 20 in the left direction (see Fig. 3).

Figure 4 is a plan view schematically showing a state in which the wire portion is continuously wound alternately in the right and left directions of the chamber portion according to an embodiment of the present invention. Referring to FIG. 4, the wire portion 90 that is wound and moved around the plurality of chamber portions 20 may be wound alternately in one direction and the other direction. That is, when looking at the movement of the wire portion 90 in a plane, the wire portion 90 is wound in the right direction around one chamber portion 20 and then wound in the left direction around the neighboring chamber portion 20. can be repeated.

Figure 5 is a diagram schematically showing a chamber unit according to an embodiment of the present invention. Referring to FIG. 5, the chamber unit 20 according to an embodiment of the present invention may include a chamber case unit 60, a chamber roller unit 70, and a chamber deposition unit 80. These components may be provided in each chamber unit 20.

The chamber case portion 60 can pass the wire portion 90. For example, each chamber case portion 60 may have a space formed therein for a deposition process to be performed, and holes may be formed on both sides to allow the wire portion 90 to pass through.

The chamber roller part 70 is built into the chamber case part 60 and can induce the wire part 90 to move by winding it one or more times. For example, the deposition process may be performed with the wire portion 90 wound in the axial direction of the chamber roller portion 70 and the surface exposed.

The chamber deposition unit 80 is built into the chamber case unit 60 and can deposit the wire unit 90. For example, the chamber deposition unit 80 includes a deposition material unit 81 built into the chamber case unit 60, a deposition gas unit 82 that supplies gas to the chamber case unit 60, and a chamber case unit ( It may include a deposition power supply unit 83 that supplies power to 60). The deposition power supply unit 83 can supply high frequency or direct current.

Figure 6 is a diagram schematically showing a chamber case portion according to an embodiment of the present invention. Referring to FIG. 6, the chamber case portion 60 according to an embodiment of the present invention may include a case space portion 61, a case inlet portion 62, and a case outlet portion 63.

The case space portion 61 forms a deposition space and can be opened and closed. For example, the case space 61 consists of a pair of upper and lower or left and right sides, and is in close contact with each other to maintain an airtight state, and when separated from each other, internal facility maintenance work can be performed.

The case inlet 62 is formed on one side of the case space 61, and the wire portion 90 can be introduced. For example, the case inlet portion 62 is formed on one side of the case space portion 61 and may be shaped like a hole or duct to allow the wire portion 90 to pass through.

The case outlet portion 63 is formed on the other side of the case space portion 61, and the completely deposited wire portion 90 can be discharged from the case space portion 61. For example, the case outlet portion 63 is formed on the other side of the case space portion 61 and may be shaped like a hole or duct to allow the wire portion 90 to pass through.

Figure 7 is a diagram schematically showing a chamber roller portion according to an embodiment of the present invention. Referring to FIG. 7, the chamber roller unit 70 according to an embodiment of the present invention may include a roller entrance guide unit 71, a roller outlet guide unit 72, and a roller process unit 73. .

The roller entrance guide part 71 can guide the wire part 90 flowing into the chamber case part 60. For example, the roller entrance guide part 71 may be rotatably mounted on the case space part 61 and placed close to the case entrance part 62. The roller entrance guide part 71 can move up, down, left and right based on the rotation axis, so that the position of the wire part 90 can be adjusted.

The roller exit guide part 72 can guide the wire part 90 discharged from the chamber case part 60. For example, the roller outlet guide part 72 may be rotatably mounted in the case space part 61 and placed close to the case outlet part 63. The roller outlet guide portion 72 can move up, down, left, and right based on the rotation axis, allowing the position of the wire portion 90 to be adjusted.

The roller processing unit 73 is disposed between the roller inlet guide unit 71 and the roller outlet guide unit 72, and can induce the wire unit 90 to be wound and moved one or more times. For example, the roller process unit 73 may have two or more rollers spaced apart from each other, and the wire part 90 may be wound around the roller process unit 73 so as not to overlap each other, thereby forming deposition on the exposed surface.

Figure 8 is a diagram schematically showing a connection part according to an embodiment of the present invention. Referring to FIG. 8, the deposition apparatus 1 for a superconductor according to an embodiment of the present invention may further include a connection portion 40.

The connection portion 40 is disposed between the plurality of chamber portions 20 to surround the wire portion 90 and can maintain the process environment of each of the plurality of chamber portions 20. For example, the connection part 40 may be connected to the case inlet 62 formed in one chamber part 20 and the case outlet part 63 formed in the other chamber part 20. Both ends of the connection part 40 may be assembled to the chamber part 20. At this time, the assembly part can be sealed to block the inflow of external gas.

More specifically, the connection part 40 may include a connection duct part 41, a connection discharge part 42, and a connection delay part 43.

The connection duct portion 41 is disposed between the chamber portions 20, and connects adjacent chamber portions 20 to allow the wire portion 90 to pass therethrough. For example, the connection duct portion 41 may have both ends in communication with a case inlet portion 62 formed in one chamber portion 20 and a case outlet portion 63 formed in the other chamber portion 20. You can. In addition, the connection duct portion 41 may connect the chamber portion 20 and the withdrawal portion 10, and the chamber portion 20 and the recovery portion 30.

The connection duct portion 41 may include a first duct portion 411 made of a rigid body, and a second duct portion 412 that is connected to the end of the first duct portion 411 and has a wrinkled shape whose length can be adjusted. there is. For this reason, after arranging each chamber part 20, the first duct part 411 is connected to one chamber part 20, and the length of the contracted second duct part 412 is increased to connect the first duct part 411 to the other chamber part 20. It can be connected to the chamber part 20.

The connection duct portion 41 can move up, down, left, and right according to the movement path of the wire portion 90. For example, the flanges formed at both ends of the connecting duct portion 41 face the chamber portion 20, and the fastening hole for bolt connection is formed larger than the size of the bolt, so that the flange can be moved up, down, left, and right based on the bolt. there is. In addition, the washer mounted on the bolt that secures the flange to the chamber portion 20 is formed larger than the fastening hole to press the flange. A sealing member may be disposed between the connection duct portion 41 and the chamber portion 20.

The connection discharge part 42 is formed in the connection duct part 41 and can discharge the air inside the connection duct part 41 to the outside. For example, the connection discharge unit 42 receives the discharge detection unit 421 that detects the internal pressure, substances, etc. of the connection duct unit 41, and the detection signal of the discharge detection unit 421 to connect the connection duct unit 41. It may include an exhaust pump unit 422 that discharges the internal air to the outside to maintain the connection duct unit 41 in a vacuum state.

The connection delay part 43 is formed inside the connection duct part 41, passes through the wire part 90, blocks the inflow of deposition material between adjacent chamber parts 20, and can delay the movement of internal gas. there is. For example, the connection delay unit 43 may delay the movement of the deposition material formed in one chamber unit 20 to the other chamber unit 20 through the connection duct unit 41. In this way, if the movement speed of the deposition material and internal gas due to the pressure difference is significantly reduced, the capacity and operating time of the discharge pump unit 422 may be reduced.

In addition, the connection part 40 may further include a connection opening and closing part 44. The connection opening and closing part 44 is formed in the connection duct part 41 and can be opened and closed for work. That is, the connection opening and closing portion 44 may be added to improve the installation workability of the initial wire portion 90 of the system. The connection opening and closing part 44 may include an opening and closing pipe part 441 in communication with the first duct part 411, and an opening and closing door part 442 that opens and closes the opening and closing pipe part 441.

Figure 9 is a diagram schematically showing a connection delay unit according to the first embodiment of the present invention. Referring to FIG. 9, the connection delay portion 43 according to the first embodiment may include a delay protrusion portion 45. The plurality of delay protrusions 45 may extend inward from the inner wall of the connection duct portion 41. The delay protrusion 45 may protrude from the upper and lower portions of the connection duct portion 41, respectively, in the direction of the wire portion 90. A plurality of delay protrusions 45 are arranged to be spaced apart in the longitudinal direction of the connection duct part 41 and are arranged at an angle to reduce the movement speed of the deposition material.

For example, the discharge pump unit 422 is disposed in the center of the connection duct portion 41, and on the left side of the discharge pump unit 422, the delay protrusion 45 is disposed inclined to the left, and the discharge pump unit 422 On the right side, the delay protrusion 45 may be disposed inclined to the right (see FIG. 9A).

In addition, the discharge pump unit 422 is disposed in the center of the connection duct portion 41, and on the left side of the discharge pump unit 422, a delay protrusion 45 is disposed inclined to the right, and the discharge pump unit 422 On the right side, the delay protrusion 45 may be disposed inclined toward the left (see FIG. 9B).

In addition, the delay protrusion 45 is disposed inclined to the right in the longitudinal direction of the connection duct portion 41 (see FIG. 9C), or the delay protrusion 45 is disposed inclined to the left in the longitudinal direction of the connection duct portion 41. It may be arranged inclinedly (see Figure 9d).

Figure 10 is a diagram schematically showing a connection delay unit according to a second embodiment of the present invention. Referring to FIG. 10, the connection delay unit 43 according to the second embodiment of the present invention may include a delay pipe unit 46, a delay baffle unit 47, and a delay adjustment unit 48.

The delay pipe portion 46 is built into the connection duct portion 41 and passes through the wire portion 90, and a plurality of opening hole portions 461 may be formed. For example, the delay pipe part 46 may be assembled inside the connection duct part 41 or may be arranged to be spaced apart from the inside of the connection duct part 41.

A plurality of delay baffle parts 47 may protrude inside the delay pipe part 46. For example, the delay baffle portion 47 may have a shape corresponding to the delay protrusion 45 of FIG. 9 .

The delay control unit 48 is mounted on the connection duct unit 41, and the mounting position of the delay pipe unit 46 can be adjusted to correspond to the position of the wire unit 90. As an example, the delay control unit 48 is disposed on the left and right sides and the upper and lower sides of the delay pipe part 46, and moves the delay pipe part 46 by pushing or pulling the delay pipe part 46 by moving forward and backward or changing its length. It can be moved up, down, left and right. For example, the end of the delay control unit 48 is connected to the delay pipe part 46 and coupled to the connection duct part 41, and the position of the delay pipe part 46 can be adjusted by moving its own position. In addition, the delay control unit 48 is disposed between the connection duct part 41 and the delay pipe unit 46, and its length can be increased or decreased to adjust the position of the delay pipe unit 46.

Meanwhile, a delay sealing part 49 may be provided to prevent deposition material from flowing between the connection duct part 41 and the delay pipe part 46. The delay sealing part 49 may cover the space between both ends of the delay pipe part 46 and the connection duct part 41. The delay sealing portion 49 may be capable of changing its shape to maintain the sealing state during the position adjustment process of the delay pipe portion 46. For example, the delay sealing portion 49 may have a pleated curtain shape.

Figure 11 is a diagram schematically showing a state in which frequency interference is prevented by a connection unit according to an embodiment of the present invention. Referring to FIG. 11, the connection delay unit 43 can prevent frequency interference caused by the use of high-frequency power. That is, if the high frequency supplied from the deposition power supply unit 83 in FIG. 5 moves to the adjacent chamber unit 20 through the connection duct unit 41, electrical interference may occur. However, when the connection delay part 43 protrudes inside the connection duct part 41, the RF frequency is blocked by the connection delay part 43 and movement to the adjacent chamber part 20 is blocked.

The operation of the superconductor deposition apparatus according to an embodiment of the present invention having the above configuration will be described as follows.

The wire portion 90 wound around the draw-out portion 10 sequentially passes through the plurality of chamber portions 20 and is then wound around the recovery portion 30. At this time, as the wire portion 90 passes through each chamber portion 20, a buffer layer for a superconductor is sequentially deposited.

By moving the wire portion 90 around each chamber portion 20 more than once, the deposition time can be increased in the limited space inside the chamber portion 20, and the overall equipment length and volume can be reduced. Additionally, the direction in which the wire portion 90 is wound around the chamber portion 20 can be changed in various ways depending on the installation environment.

Meanwhile, a connection part 40 is disposed between the chamber parts 20, and the connection delay part 43 formed in the connection part 40 allows the deposition material formed in each chamber part 20 to be deposited. It delays movement to the neighboring chamber unit 20 due to the pressure difference. If the connection discharge section 42 discharges the air inside the connection duct section 41 to the outside while the movement of the deposition material is delayed in the connection delay section 43, the deposition environment in each chamber section 20 will be maintained stably. You can.

In the deposition apparatus for superconductors according to an embodiment of the present invention, the wire portion 90 drawn out from the draw-out portion 10 is recovered to the recovery portion 30, and is disposed between the draw-out portion 10 and the recovery portion 30. It may be deposited while sequentially passing through a plurality of chamber parts 20. At this time, since the wire portion 90 is wound around the chamber portion 20 more than once, the deposition time for the wire portion 90 increases in the limited internal space of the chamber portion 20, thereby reducing the overall facility size.

The present invention has been described with reference to the embodiments shown in the drawings, but these are merely exemplary, and those skilled in the art will recognize that various modifications and other equivalent embodiments are possible therefrom. You will understand. Therefore, the true technical protection scope of the present invention should be determined by the scope of the patent claims below.

10: Drawout part 20: Chamber part
30: recovery part 40: connection part
41: connection duct part 42: connection discharge part
43: connection delay part 44: connection opening and closing part
45: delayed protrusion 46: delayed crown
47: delay baffle part 48: delay control part
60: Chamber case part 61: Case space part
62: case inlet 63: case outlet
70: Chamber roller part 71: Roller entrance guide part
72: Roller exit guide unit 73: Roller process unit

Claims (10)

A draw-out section in which the wire section is wound;
a plurality of chamber parts spaced apart to allow the wire part discharged from the draw-out part to pass through and to perform an individual deposition process;
a recovery unit that recovers the wire portion that has passed through the chamber unit; and
It includes a connection part disposed between the plurality of chamber parts, surrounding the wire part, and maintaining the process environment of each of the plurality of chamber parts,
The connection part is
a connecting duct portion disposed between the chamber portions, connecting the adjacent chamber portions and allowing the wire portion to pass through;
a connection discharge portion formed in the connection duct portion and discharging air inside the connection duct portion to the outside; and
A connection delay part formed inside the connection duct part, passes through the wire part, and delays the movement of the deposition material and internal gas between the adjacent chamber parts.
The method of claim 1, wherein the chamber unit
a chamber case portion that passes through the wire portion;
a chamber roller unit built in the chamber case unit and guiding the wire unit to be wound and moved at least once; and
A deposition apparatus for a superconductor, comprising: a chamber deposition unit built in the chamber case unit and depositing the wire unit.
The method of claim 2, wherein the chamber case part
A case space that forms a deposition space and can be opened and closed;
a case inlet formed on one side of the case space, into which the wire part flows; and
A superconductor deposition apparatus comprising: a case outlet portion formed on the other side of the case space portion and through which the wire portion is discharged.
The method of claim 2, wherein the chamber roller unit
A roller entrance guide portion that guides the wire portion flowing into the chamber case portion;
a roller outlet guide portion that guides the wire portion discharged from the chamber case portion; and
A superconductor deposition apparatus comprising: a roller process unit disposed between the roller inlet guide unit and the roller outlet guide unit, and guiding the wire unit to be wound and moved at least once.
delete According to clause 1,
A deposition apparatus for a superconductor, wherein the connecting duct portion is capable of moving up and down and left and right according to the movement path of the wire portion.
The method of claim 1, wherein the connection delay unit
A deposition apparatus for a superconductor, comprising: a plurality of delay protrusions extending in an inner direction from the inner wall of the connection duct portion.
The method of claim 1, wherein the connection delay unit
A delay pipe part built into the connection duct part, passes through the wire part, and has a plurality of opening holes formed therein;
a plurality of delay baffle parts protruding inside the delay pipe; and
A delay control unit mounted on the connection duct unit and adjusting the mounting position of the delay tube unit to correspond to the position of the wire unit.
According to clause 1,
A deposition device for a superconductor, wherein the connection delay unit prevents frequency interference caused by the use of high-frequency power.
The method of claim 1, wherein the connection part
A deposition apparatus for a superconductor, characterized in that it further includes a connection opening and closing part formed in the connection duct part and capable of opening and closing.

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