KR20210064085A - Ion Beam Assisted Deposition System Comprising Ion Source For Uniform Thickness Coating - Google Patents

Abstract

The present invention relates to the formation of an IBAD-MgO thin film layer in an ion beam auxiliary deposition in-line system for depositing/forming a high-quality template with excellent biaxial alignment orientability used as a second substrate for a superconductive wire through a continuous process in a high-vacuum state, wherein as an ion beam inputted diagonally into a broad template deposition area is formed to be inputted with a uniform ion beam property throughout the entire deposition area, an ion source can bring about uniform deposition results throughout the entire deposition area. As to the ion source withdrawing a plurality of ion beams for the purpose of broad deposition, a plurality of structures corresponding to individual ion beams of a shield grid and/or an acceleration grid constituting the ion source are formed to be changed gradually in an inclined direction formed by the ion source and the deposition area.

Description

Ion Beam Assisted Deposition System Comprising Ion Source For Uniform Thickness Coating

The present invention provides an ion beam assisted deposition system for performing large-area coating, by providing ion beams having different energies to a base substrate to provide a thin film layer with biaxial alignment and a uniform thickness to improve productivity and process It aims to provide cost savings.

More specifically, a high-quality buffer layer structure having biaxial alignment including several individual layers on a metal tape substrate used as a base material for forming a high-temperature superconductor or wire rod having high critical current characteristics, To provide a continuous process Ion Beam Assisted Deposition System (IBAD) In-Line System of BAD-MgO thin film layers.

The content described in this section merely provides background information on the present embodiment and does not constitute the prior art.

Ion beam assisted deposition (IBAD) is a method of increasing the mobility of an evaporation source by irradiating a surface with a high energy ion beam during physical deposition such as sputtering in a high vacuum.

The ion beam assisted deposition method can be used to manufacture a thin-film superconducting wire in which a high-temperature superconductor is deposited on a metal tape such as nickel having excellent malleability or ductility (see Non-Patent Document 1). Referring to the paper, a 1 km-long superconducting wire was manufactured. To this end, a reel assembly for transport and alignment of the wire, sputtering ion source, and auxiliary ion source were placed in a large vacuum chamber, and the wire rod between the reels was placed on the reel. , for example, a process of depositing a thin film having two-dimensional orientation by IBAD is performed. In order to increase productivity, the deposition region is formed in a large area, and a plurality of wire rods are disposed and transferred apart from each other between the reels (see Patent Documents 0002 and 0003).

The IBAD-based system used a lot of high-strength Hastelloy, but recently, using a buffer layer including several biaxially aligned layers on a polycrystalline metal tape substrate using SUS as a base material as a template, REBaCuO oxide-based superconductivity form a wire Since the template itself including the buffer layer having uniform biaxial alignment acts as a substrate for the superconducting wire, the crystallographic, chemical, and electrical properties of the substrate directly affect the superconducting wire.

The cost of the IBAD continuous system includes the cost of the base material (such as Hastelloy, SUS, etc.), the surface treatment of the base material, and the cost of the IBAD process (including equipment cost, speed, yield, etc.). Considering low-cost mass production, it is most important to increase the production rate, that is, the deposition rate and orientation of the IBAD biaxially oriented thin film layer. It is necessary to grow thin films to a thickness that exhibits excellent biaxially aligned crystallinity in a short time. For this, the surface polishing of the metal tape substrate base material, which is a pretreatment process for this, and the processing cost of the amorphous and diffusion barrier layer are also important factors.

In general, it is common to deposit a thin IBAD-MgO layer and then apply a MgO layer of an appropriate thickness through a Homo-Epi process. The key to low cost is how quickly to produce the biaxially aligned oriented layer of IBAD-MgO, which is the slowest part of the IBAD process, that is, in a thin thickness, with good alignment and wide width.

In the conventional IBAD process, an ion beam accelerated by the same energy from the ion generator is provided as an auxiliary deposition source to the surface of a buffer layer formed on a base metal tape substrate, and a host material lying perpendicular to the metal substrate is deposited by electron beam deposition. is deposited On the surface of the buffer layer, particles of a host material collide with kinetic energy provided as an auxiliary energy source to form an MgO thin film having biaxial alignment. However, since the ion beam energy provided as an auxiliary deposition source lies at an angle of 40° to 60° in one direction from the buffer layer, the energy of the actual ion beam impinging on the surface of the buffer layer due to the distance difference spreads across the surface of the buffer layer. It has a non-uniform kinetic energy distribution.

This non-uniform ion beam energy difference on the surface of the buffer layer causes non-uniformity of interaction (etch-deposition chain reaction) caused by collision of host particles, so it may not be possible to supply sufficient energy for crystallization with biaxial alignment. have. That is, the thickness and the orientation of the biaxial alignment may become non-uniform from the inside of the longitudinal axis (width direction) of the metal tape substrate including the buffer layer to the outside of the center direction, and thus the yield and productivity are lowered, resulting in huge process costs. Yes (see patent 0003).

Korean Patent Registration No. 10-0834115 (2008.5.26) US Patent Publication No. 2004/0168636 (2004.09.02) Korean Patent Registration No. 10-0834114 (2008.5.26)

Hanyu, S. and others, "High-rate and Long-length IBAD Layers for GdBa2Cu3O7-x Superconducting Film", Fujikura Tech. Review, 2010, pp.55-57.

The present disclosure relates to the formation of a template (LMO/Homo-Epi MgO/IBAD-MgO/Y ₂ O ₃ /Al ₂ O ₃ /metal tape substrate) having a uniform biaxial alignment for forming a superconducting wire, An IBAD production system that provides a wide and thin MgO thin film with excellent biaxial alignment. The ion beam energy obliquely incident on the metal tape substrate on which the buffer layer (seed layer (Y ₂ O ₃ )/diffusion prevention film (Al ₂ O ₃ )/metal tape substrate) is formed is consequently uniform on the buffer layer. It is a primary object to provide an IBAD system comprising ion sources formed to have different energy distributions.

In addition, the roll structure for transferring the metal tape substrate consists of a four-roll structure in which each of the four rolls of the multi-turn method including a plurality of guide grooves is arranged in a square shape, but the separation distance between the left and right rolls By providing to be more than three times the separation distance between the upper and lower rolls, the breakage of the partition wall due to the tilting phenomenon that occurs when the metal tape substrate rotates in each roll is controlled and first, debris and side strain are minimized. Therefore, it is an additional object to provide an IBAD system with improved productivity.

In order to solve this problem, the IBAD in-line system including an ion source according to an embodiment of the present disclosure is an IBAD in-line system of a continuous process for forming a high-temperature superconductor and a wire, four multi-turns (multi- turn) method, each of which includes a four-roll structure arranged in a square shape, and is formed to move a long metal tape substrate having a long axis for forming a template in a certain direction, and the center of each roll As a reference, the distance between the rolls in the long axis direction is formed to be at least three times the distance between the rolls in the transverse axis direction perpendicular to the long axis, the conveying unit; A deposition region on the metal substrate where the individual layers of the template are formed; A host material disposed in parallel to the deposition region to form an individual layer of the template is incident on the deposition region in a direction perpendicular to the deposition region. an electron beam supply unit for supplying; and an ion beam that is spaced apart from the electron beam supply unit in the long axis direction of the metal substrate, has an accelerated high energy having a three-dimensional trajectory in a certain direction, and assists in the formation of a host material on the template surface formed on the metal tape substrate. and an ion beam generator that is incident at a predetermined angle between the major axis direction and the horizontal axis direction, wherein the ion beam generator is formed such that energy levels on the cross-section of the ion beam are distributed differently, the energy of the ion beam reaching the metal tape substrate It is characterized in that the distribution is formed to be uniform.

In addition, each of the rolls includes a guide groove formed to guide and transport the metal tape substrate, wherein the guide groove has a predetermined angle with respect to the circumferential direction of the roll to ensure multi-turn rotation of the metal tape substrate and prevent twisting. characterized in that it is formed.

In addition, in the 4-roll structure, the distance between the rolls in the long axis direction with respect to the center of each roll is formed to be 4 times or more of the distance between the rolls in the horizontal axis direction perpendicular to the long axis.

In addition, the beam direction of the ion beam emitted from the ion beam generator with respect to the direction perpendicular to the deposition region is characterized in that it is arranged to be 40° to 60°.

In addition, it characterized in that it further comprises a heat treatment member for increasing the crystallinity of the biaxial orientation of the individual layer formed in the deposition region of the template.

In addition, the template has a laminated structure of a metal tape substrate, a diffusion barrier layer (Al ₂ O ₃ ), a seed layer (Y ₂ O ₃ ), an IBAD-MgO layer, a homo-epi-MgO layer, and a strain matching layer (LMO_LaMnO). do it with

In addition, the ion beams are formed to have different energies at the entrance of the ion beam generator, and are formed to have different mean free paths from the center of the deposition region to the longitudinal section.

In addition, the ion beam generator is a radio frequency (RF) ion source composed of a triple electrode including a shielding grid, an acceleration grid, and a ground grid, and the shielding grid includes a plurality of openings, and the openings are circular, elliptical, and linear. ) type, and the opening of the shielding grid includes a chamfering shape in at least some areas, and the chamfering angle of the chamfering shape is formed to be variable in one direction, but it is characterized in that the maximum is 42°. .

In addition, the acceleration grid is characterized in that it is formed to have a variable thickness in one direction.

In addition, it is characterized in that the shielding grid and the acceleration grid are disposed in a form inclined at a predetermined angle in one direction.

In addition, it is characterized in that the plurality of openings of the shielding grid are arranged to be dense or sparse in one direction.

The present disclosure has an effect of providing an IBAD system capable of obtaining a uniform deposition result over a deposition area by an ion beam obliquely incident on a large deposition area having uniform ion beam characteristics throughout the deposition area.

In addition, since the wide template used as the second substrate to form the superconducting wire includes IBAD-MgO having uniform and excellent biaxial alignment, there is an effect of increasing production yield and reducing production cost.

1 shows a cross-sectional structure of a second-generation high-temperature superconducting wire.
2 is a conceptual diagram of an ion beam assisted deposition (IBAD) system for a multi-turn continuous process of a four-roll structure according to an embodiment of the present invention.
Figure 3 shows that ion beams with different angles of incidence provide different impact energies on the template surface.
FIG. 4 shows that the energy of the ion beam incident on the template surface varies depending on the position due to the difference in the path of the ion beam incident obliquely on the template surface.
FIG. 5 shows changes in ion beam energy before and after the collision of the incident ion beam according to the example shown in FIG. 4 and thus the orientation of the biaxial alignment of IBAD-MgO.
6 is a diagram illustrating changes in ion beam energy before and after collision of an ion beam incident by an ion source formed to have different energy distributions in an ion beam cross section corresponding to an arrangement angle between an ion source and a template, according to an embodiment of the present invention; The resulting orientation of the biaxial alignment of IBAD-MgO is shown.

Hereinafter, some embodiments of the present invention will be described in detail through exemplary drawings. In adding reference numerals to elements of each drawing, it should be noted that the same elements are assigned the same numerals as possible, even if they are indicated on different drawings. In addition, in describing the present invention, when it is determined that a detailed description of a related known configuration or function may obscure the subject matter of the present invention, a detailed description thereof will be omitted.

In addition, in describing the constituent elements of the present invention, terms such as first, second, A, B, (a) and (b) may be used. These terms are for distinguishing the constituent element from other constituent elements, and the nature, order, or order of the constituent element is not limited by the term. Throughout the specification, when a part'includes' or'includes' a certain element, it means that other elements may be further included rather than excluding other elements unless otherwise stated. . In addition, the '... Terms such as 'unit' and 'module' mean a unit that processes at least one function or operation, which may be implemented as hardware or software or a combination of hardware and software.

1 shows a cross-sectional structure of a second-generation high-temperature superconducting wire.

Referring to FIG. 1, the second-generation high-temperature superconducting wire is subjected to surface treatment using an electroplating process on a Hastelloy (Ni-alloyed tape) or SUS tape substrate 10, and then from the metal tape substrate to the surface. In order to prevent diffusion of impurities, etc., the Al ₂ O ₃ diffusion barrier layer 20 having a thickness of about 40 nm is deposited and formed using a sputtering device. _{A Y 2} O ₃ seed layer 30 having a thickness of about 7 nm on the upper surface of the Al ₂ O ₃ diffusion barrier layer 20 is deposited using a deposition equipment. By _{electron beam deposition on the Y 2} O ₃ seed layer 30, an ion beam having high energy and an ion beam having high energy are simultaneously deposited with the Mg host particles in the vertical direction to convert the kinetic energy of the host Mg particles to achieve biaxial alignment. An IBAD-MgO layer 50 whose surface velocity is controlled to have it is formed. A MgO epitaxial layer 50 of about 30 nm or less having the same crystallinity is grown on the IBAD-MgO having biaxial alignment. In order to increase crystallinity, a high-temperature heat treatment process is performed simultaneously with the electron beam deposition method. On top of the homo-epi MgO (50) having biaxial alignment, a LMO (LaMnO) strain matching layer having a thickness of about 20 nm ( 60) is formed using a sputtering deposition method.

[Diffusion prevention layer 20 / seed layer 30 / IBAD-MgO layer 40 / Homo-epi MgO layer 50 / strain matching layer 60] formed on the metal tape substrate is a superconductor or wire rod. The template 1 used as the second substrate serves and functions. The orientation and uniformity of the biaxial alignment of the template 1 are key factors that are directly determined by the physical, chemical, and electrical properties of the superconductor or wire rod. Therefore, in order to be used as the template 1, excellent biaxial alignment and uniformity must be secured. In order to solve this problem, it must be built in the In-Line System production process, which is a continuous batch process of high vacuum. That is, the most important process for determining the performance and production yield of a superconductor or wire rod is a process of securing the IBAD-MgO layer 40 having uniform biaxial alignment.

A REBaCuO superconducting oxide 70 having a thickness of 1 to 3 μm is coated on the template 1 by methods and methods such as reactive co-evaporation (RCE), pulse laser deposition (PLD), and metal organic chemical vapor deposition (MOCVD). formed using In order to protect the REBaCuO superconducting oxide layer 70 , an Ag protective layer 80 having a thickness of about 1.5 μm is formed by sputtering deposition. Heat treatment for each process and/or layer may be performed, and finally, thick Cu is formed by using an electrolytic polishing or lamination method.

2 is a conceptual diagram of an ion beam assisted deposition (IBAD) system for a multi-turn continuous process of a four-roll structure according to an embodiment of the present invention.

The ion beam-assisted deposition system illustrated in FIG. 2 exemplifies a system for manufacturing a superconducting wire, but is not limited thereto, and may be applied to a large-area semiconductor, photovoltaic, or magnetic material in the form of a flat plate.

Referring to FIG. 2 , the IBAD system according to an embodiment includes an unwinding zone 210 and a rewinding zone 230 for transport and alignment of a metal tape substrate in a large vacuum chamber, and the IBAD - In order to improve the orientation of the biaxial alignment of the MgO layer, it is configured in a multi-turn method of a continuous process of a 4-roll structure (200: 220a, 220b, 220c, 220d).

In addition, in the IBAD system according to an embodiment, based on the center of each individual roll 220a, 220b, 220c, 220d, the length of the transverse axis (in the vertical direction in the drawing) relative to the long axis (in the horizontal direction in the drawing) is A transfer unit 200 having a ratio of 4 times or more, a deposition region 260 forming an individual layer of a template structure, a heater 250 providing thermal energy for biaxial alignment orientation, mounted parallel to the template, and an MgO layer It consists of an electron beam evaporator 290 for vertically depositing host particles of the ion beam evaporator 290 and an ion beam generator 280 disposed at an angle of 45° with respect to the template and generating high-energy ion beams having different directions. The ion beam generator is formed to simultaneously provide ion beams having high energy (ion beam current) accelerated to different magnitudes, and is formed to have different mean free paths in the longitudinal section of the center of the template deposition region.

According to an embodiment, by providing ion beams having high energy that are simultaneously accelerated to have different energies (current density, size) in the ion generator, the ion beam is tilted with respect to the vertical axis of the surface of the template deposition region to enter the deposition region. It is possible to provide a high-quality IBAD-MgO layer 40 having excellent biaxial alignment and uniformity even if it is incident at an angle.

Figure 3 shows that ion beams with different angles of incidence provide different impact energies on the template surface.

3 is an ion generating unit (generator) for ion beam assisted deposition mounted with different disposition angles in the longitudinal (width) direction (45° direction) and transverse (length) direction (90° direction) with respect to the template deposition area. If it is, it represents the energy change of the ion beam.

Referring to (b) of FIG. 3 , the ion beam generator is disposed in parallel with a template formed of a partial buffer layer on a metal tape substrate, and uniformly with host particles (Mg) deposited on the surface of the template in a vertical direction by an electron beam method. Assists in kinetic energy conversion. Accordingly, the energy of the ion beam accelerated from the ion generator onto the template surface may have the same mean free path.

On the other hand, referring to FIG. 3A , when the ion beam generator is disposed inclined at a predetermined angle (eg, 45°) from the template surface, the ion beam colliding with the surface of the template region is generated at each position of the ion beam cross-section. The difference in distance from the surface of the region occurs, and therefore, the interaction of kinetic energy conversion with the host (Mg) particles on the template surface (etch-deposition chain reaction) may occur non-uniformly, and consequently IBAD-MgO (40 ) may cause a difference in the thickness of the layers. This non-uniform thickness difference of the IBAD-MgO (40) layer may directly lead to a decrease in the crystallinity of the biaxial alignment. This non-uniformity of the orientation of the biaxial alignment may cause a fatal adverse effect on the performance and production yield of the superconducting wire.

Therefore, in order to improve the production yield and productivity of the IBAD in-line system in a continuous process using a metal tape substrate and mass production through wide application, the ion beam colliding with the template surface is provided to have uniform energy, and as a result, the host It should be possible to change particles (Mg) into uniform kinetic energy.

FIG. 4 shows that the energy of the ion beam incident on the template surface varies depending on the position due to the difference in the path of the ion beam incident obliquely on the template surface.

_{FIG. 4 shows that ion beam energies E a1} , E _a2 , E _b1 , E _b2 incident on the deposition surface of the template 430 are different for each position on the deposition surface of the template 430 in FIG. 3A . For convenience of description, the energy difference according to the distance change will be described with respect to the case where the deposition surface of the template 430 for the ion generator 420a is disposed at an angle of 45°.

Referring to FIG. 4 , the ion beam generator 420b has a linear shape, and the horizontal/vertical length of the emission part is 6 x 22 cm or 6 x 30 cm, and the size in the longitudinal (width) direction is about 6 cm. do. The energy magnitude of the accelerated ion beam at the beginning of the ion emitting units 420a and 420b is uniform, exemplifying the case in which the energy _{of E a1} and E _{b1 is emitted from the upper and lower portions.} The emitted ion beam collides with the 45° tilted A-zone and B-zone template surfaces and is converted into kinetic energy. At this time, when the collision energy of A-zone is E _a2 , and the collision energy of B-zone is E _b2 , a distance difference occurs in A-zone due to the slope of B-zone, and thus the energy of the ion beam is also non-uniformly changed. do.

The ion generator 410 according to an embodiment may have a triple electrode structure of a shielding grid, an acceleration grid, and a ground grid. In the ion generator 410, electrons rotate at high speed in a circular or elliptical shape by a magnetic field in an internal RF plasma state, and when a negative voltage (-) is applied to the acceleration grid, the ion beam is accelerated and has a certain directionality. Accelerated from (420a, 420b) to the template surface with a high-energy stereoscopic trajectory.

Plasma generated from an ion source is usually collected in a plasma expansion cup, the shape of the plasma surface may be controlled by a screen grid, and plasma may be drawn from the plasma surface.

In order to suppress the diffusion of the extracted beam and advance the high-density ion beam in the traveling direction, the plasma surface is preferably slightly concave when viewed from the extraction direction. The structure (shape, thickness, height, acceleration grid thickness and distance between the shielding grid and the screen grid within the range where arc discharge does not occur) around the shielding grid or plasma extraction unit and the bias conditions of the extracted beam The direction and energy (current density, intensity) of the ion beam may be changed by changing the angle of the initial trajectory.

The acceleration grid accelerates the extracted ion beam, and may serve as a lens depending on the configuration (thickness, chamfer shape of the opening), and serves to focus the ion beam, and electrons in the plasma are removed from the plasma chamber. It can be formed to suppress the emission and be absorbed by the shielding grid.

The reduction grid is designed/manufactured to prevent the sputtered charged particles from being adsorbed to the shielding grid or the acceleration grid, and to be placed on the outermost side of the ion source to further support the shielding grid or the acceleration grid and to suppress thermal deformation. can

The present disclosure provides IBAD with uniform biaxial alignment by accelerating collisions with ion beams having different energies on the template surface so that active kinetic energy interaction (etch-deposition chain reaction) proceeds uniformly with host particles. - Characterized in providing a MgO layer (40).

Although not shown separately, the structure of the ion extractor of the present disclosure according to an embodiment includes a plurality of plasma outlets and a shielding grid, an acceleration grid, and a deceleration grid disposed in succession at the rear, as can be easily understood by those skilled in the art. It has a basic triple electrode structure including However, according to an embodiment of the present disclosure, each of a shielding grid, an acceleration grid, and a deceleration grid for controlling to be extracted with different energies from some specific regions constituting a plurality of beams drawn out from each outlet is included. According to an embodiment of the present disclosure, it is characterized in that a plurality of ion beams having different energies are simultaneously emitted by appropriately changing their shapes.

That is, an embodiment of the present disclosure does not configure a plurality of individual ion beams constituting the entire ion beam as a grid having the same shape, but a grid design of individual ion beams so that their characteristics change in one direction in the cross section of the ion beam. characterized by change.

In addition, in an embodiment of the present disclosure, diffusion (or emittance) or accelerated energy of an extracted beam may be defined by these shielding grids and acceleration grids. In the wide ion beam assisted deposition system according to an embodiment, the structure of the ion source emitting the ion beam may be designed so that uniform energy is incident on the template in consideration of the angular arrangement relationship between the template and the ion source.

In an embodiment of the present disclosure, as the thickness of the shielding grid becomes thinner, the extracted ion beam current increases, and as the thickness increases, the degree of penetration of the electric field formed by the shielding grid into the plasma region decreases, and thus the extracted ions The beam current is also reduced. Since the ion beam extracted from the plasma surface does not have an ideal shape traveling parallel to the central axis, as the thickness of the shielding grid decreases, the ion beam blocked by the shielding grid decreases. On the other hand, if the shielding grid is too thin, the lifespan of the shielding grid may be shortened, so it should be designed with an appropriate thickness or more.

In addition, as the thickness of the shielding grid increases, the radius of curvature of the plasma surface increases and becomes less concave. Considering that the hole diameter of the acceleration grid is usually smaller than the exit diameter of the shielding grid, the ion beam passing through the grid The density will be lower.

In an embodiment of the present disclosure, the opening chamfering angle of the shielding grid is formed to be large in the region where the current density of the ion beam needs to be increased. This is because the diameter of the outer peripheral surface of the plasma surface increases and the surface area of the plasma surface from which the ion beam is extracted substantially increases. In one embodiment, the chamfer angle may be set within an appropriate range, for example, within 42°. This is because, in a configuration such as an embodiment of the present disclosure in which a plurality of ion beams are extracted including a plurality of plasma outlets, when the chamfer angle of the opening becomes larger, it may structurally interfere with an adjacent plasma outlet.

In one embodiment of the present disclosure, the shielding grid and the accelerating grid work together to form a plasma surface and an electric field in an adjacent region from the plasma surface. Under the same bias condition, the closer the distance between the two grids is, the larger the gradient of the electric field for extracting the ion beam from the plasma surface is formed, and thus a larger ion beam current may be drawn out.

In one embodiment of the present disclosure, the ion beam center by setting the relevant design specifications of the shielding grid and the acceleration grid that define the characteristics of the ion beam so that a plurality of plasma outlets (ie, a plurality of outlets in the shielding grid) change according to the positions. It is possible to provide an ion source in which uniform ion beam characteristics are realized on a cross section inclined with respect to the axis.

In an embodiment of the present disclosure, the ion source may include a shielding grid in which a plurality of outlet diameters disposed on the shielding grid are formed to increase or decrease in one direction on an area of the shielding grid.

In an embodiment of the present disclosure, the ion source includes acceleration grids disposed at a predetermined angle with respect to the shielding grid, and a plurality of outlets disposed on the shielding grid are dense in one direction on an area of the shielding grid, or It may include a shielding grid arranged to be sparse.

In an embodiment of the present disclosure, even when the shielding grid and the acceleration grid are not parallel to each other or the thickness is changed, the central axis of the hole shape through which the ion beam passes may be formed parallel to the ion beam traveling direction.

In addition, the aforementioned one direction may be defined as a direction in which the central axis of the ion source and the vertical axis of the deposition region are inclined to each other. That is, the ion beam emitted from the ion source may be emitted in a state in which the ion beam energy in the ion beam region close to the deposition region is smaller than the ion beam energy in the ion beam region farther from the deposition region.

The ion beam emitted from the ion source according to an embodiment of the present disclosure has energy that is gradually changed in one direction, and thus, when it reaches the deposition area, the ion beam at a close distance or a long distance from the ion source, or at a uniform level The energy may be incident on the deposition region.

FIG. 5 shows changes in ion beam energy before and after the collision of the incident ion beam according to the example shown in FIG. 4 and thus the orientation of the biaxial alignment of IBAD-MgO.

Referring to FIG. 5 , the ion beam energy change according to the collision distance in the AB longitudinal (width) direction of the template deposition region 55 of the high energy ion beam accelerated from the general ion beam exit 22 and other IBADs The thickness distribution of the -MgO layer 40 is shown.

In FIG. 5(b), the energy of the ion beam accelerated in the direction of the template deposition region 55 from the exit of the initial ion beam is uniform, but is generated by the incident angle inclined in the longitudinal (width) direction from A to B. The energy distribution of the ion beam is non-uniform due to the distance difference. This non-uniform ion beam energy difference forms an IBAD-MgO layer 40 having a non-uniform thickness, as shown in FIG. 5(c).

In the A region, the energy of the ion beam is converted into kinetic energy so that sufficient interaction (etch-deposition chain reaction) occurs by collision with the host (Mg) particles in the template deposition region 55 to increase the surface mobility of the host particles. The oriented IBAD-MgO layer 40 of biaxial alignment is formed because the two-dimensional bonding preferentially occurs in the horizontal direction as the neighboring host particles are fused.

On the other hand, the IBAD-MgO layer formed thickly in the B region is caused by the fact that the energy of the ion beam is not converted to sufficient kinetic energy for interaction when the ion beam that has traveled a longer distance collides with the host particle on the deposition surface. Surface mobility is reduced on the deposition surface, and host particles are deposited as they are, so that they can be three-dimensionally bonded in a vertical direction rather than a horizontal bonding. Due to the three-dimensional bonding in the vertical direction, the thickness is increased, the orientation of biaxial alignment may not be secured, and a thin film layer having an amorphous or polycrystalline grain boundary is formed.

6 is a diagram illustrating changes in ion beam energy before and after collision of an ion beam incident by an ion source formed to have different energy distributions in an ion beam cross section corresponding to an arrangement angle between an ion source and a template, according to an embodiment of the present invention; The resulting orientation of the biaxial alignment of IBAD-MgO is shown.

Referring to FIG. 6 , the ion beams formed to have different beam energies in one direction of the beam cross-section after being simultaneously accelerated and emitted from the ion beam outlet 22 collide with the AB species (width) of the template deposition region 55 . ) shows the change in ion beam energy according to the collision distance in the direction and the thickness distribution of the IBAD-MgO layer 40 accordingly.

Referring to FIG. 6B , the energy of the ion beam accelerated in the direction of the template deposition region 55 from the exit of the initial ion beam is the energy of the ion beam incident to the B region is the energy of the ion beam incident to the A region. In the template deposition region 55, which is larger than the energy but has a distance difference due to the inclined angle of incidence, a uniform motion over the entire region from region A to region B so that the interaction by collision can sufficiently occur with the host particles. can provide energy.

Referring to (c) of Figure 6, IBAD having a biaxial alignment of uniform thickness in the template deposition region 55 in the longitudinal (width) direction from region A to region B by the IBAD system according to an embodiment It is exemplified that the -MgO layer 40 can be formed.

The above description is merely illustrative of the technical idea of the present embodiment, and those of ordinary skill in the technical field to which the present embodiment pertains will be able to make various modifications and variations without departing from the essential characteristics of the present embodiment. Accordingly, the present embodiments are not intended to limit the technical idea of the present embodiment, but to explain the technical idea, and the scope of the technical idea of the present embodiment is not limited by these embodiments. The scope of protection of this embodiment should be interpreted by the following claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present embodiment.

Claims (11)

In the continuous process IBAD inline system for forming high temperature superconductor and wire rod,
Each of the four multi-turn rolls includes a four-roll structure arranged in a square shape, and is formed to move a long metal tape substrate having a long axis for forming a template in a certain direction. However, the distance between the rolls in the long axis direction with respect to the center of each of the rolls is formed to be at least three times the distance between the rolls in the horizontal axis direction perpendicular to the long axis, a conveying unit;
a deposition region over the metal tape substrate in which individual layers of the template are formed;
an electron beam supply unit disposed in parallel to face the deposition region to supply a host material forming an individual layer of the template to the deposition region by incident in a direction perpendicular to the deposition region; and
It is spaced apart from the electron beam supply unit in the long axis direction of the metal tape substrate, has an accelerated high energy having a three-dimensional trajectory in a certain direction, and assists in the formation of the host material on the template surface formed on the metal substrate an ion beam generating unit that injects an ion beam into the ion beam at a predetermined angle between the major axis direction and the horizontal axis direction.
Including,
The ion beam generator is formed so that energy levels on the cross-section of the ion beam are distributed differently, and the energy distribution of the ion beam reaching the metal tape substrate is uniform.
IBAD In-Line System (Ion Beam Assisted Deposition In-Line System). The method of claim 1,
Each of the rolls includes a guide groove formed to guide and transport the metal tape substrate,
The guide groove is formed to have a predetermined angle with respect to the circumferential direction of the roll to ensure multi-turn rotation of the metal tape substrate and prevent twisting.
IBAD inline system. The method of claim 1,
In the four-roll structure, the distance between the rolls in the long axis direction with respect to the center of each of the rolls is formed to be at least 4 times the distance between the rolls in the horizontal axis direction perpendicular to the long axis,
IBAD inline system. The method of claim 1,
a beam direction of the ion beam emitted from the ion beam generator based on a direction perpendicular to the deposition area is arranged to be 40° to 60°;
IBAD inline system. The method of claim 1,
Further comprising a heat treatment member for increasing the crystallinity of the biaxial orientation of the individual layer formed in the deposition region of the template,
IBAD inline system. The method of claim 1,
The template has a structure in which a metal tape substrate, a diffusion barrier layer (Al ₂ O ₃ ), a seed layer (Y ₂ O ₃ ), an IBAD-MgO layer, a homo-epi-MgO layer, and a strain matching layer (LMO_LaMnO) are stacked.
IBAD inline system. The method of claim 1,
The ion beam is formed to have different energies at the entrance of the ion beam generator, and is formed to have different mean free paths from the center of the deposition region to the longitudinal section.
IBAD inline system. The method of claim 1,
The ion beam generator is an RF (Radio Frequency) ion source composed of a triple electrode including a shielding grid, an acceleration grid, and a ground grid,
The shielding grid includes a plurality of openings, wherein the openings are configured in any one of a circular shape, an elliptical shape, and a linear shape;
The opening of the shielding grid includes a chamfering shape in at least a partial area, and the chamfering angle of the chamfering shape is formed to be variable in one direction and is at most 42°.
IBAD inline system. The method of claim 8,
The acceleration grid is formed to have a variable thickness in one direction
IBAD inline system. The method of claim 8,
The shielding grid and the acceleration grid are disposed in a form inclined at a predetermined angle in one direction.
IBAD inline system. The method of claim 8,
The plurality of openings of the shielding grid are arranged to be dense or sparse in one direction.
IBAD inline system.

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