KR100834114B1 - Ibad system for fabricating metal wire article having biaxial-alignment property - Google Patents

Abstract

An IBAD(Ion Beam Assisted Deposition) system for fabricating a metal wire having a biaxial-alignment property is provided to control a deposition region of a metal substrate moving at high speed in continuous deposition on the long metal substrate. An IBAD system(10) for fabricating a superconducting wire includes a transfer unit(400), a heating member(500), a deposition member(100), an ion injection member(200), and a control member(700). The transfer unit includes a first reel member(422a) and a second reel member(422b) for multi-turn of a metal wire on a deposition region(42) to continuously deposit a biaxial-alignment thin film on the metal wire. The heating member heats the multi-turned metal wire. The deposition member deposits material on the metal wire passing through the deposition region. The ion injection member irradiates ion-beams to the thin film deposited on the metal wire. The control member controls the deposition region.

Description

IBAD System For Fabricating Metal Wire Article Having Biaxial-Alignment Property}

1 is a block diagram showing an ion beam assisted deposition (IBAD) system for manufacturing a metal wire having a biaxial orientation according to an embodiment of the present invention.

2 is a view showing a metal wire multi-turned by a reel to reel device.

3 is a view showing a support plate.

4 shows the main part of the upper chamber.

5 is a view showing an adjustment member.

6 is a view showing an upper chamber in which an adjusting member for adjusting a deposition region is installed.

Figure 7a is a view showing a control member adjusted to close the gap between the opposite rod.

Figure 7b is a view showing a control member is adjusted to a wide interval between the opposite rod.

* Explanation of symbols for the main parts of the drawings *

20: upper chamber 30: lower chamber

100: deposition member 200: ion implantation member

400: transfer unit 500: heating member

600: support plate 700: adjustment member

The present invention relates to a system for manufacturing a superconducting wire, and more particularly to a system for manufacturing a metal wire having a biaxial orientation that can be used as a base material of the superconducting wire.

As is well known, a superconductor is a perfectly conducting body without electrical resistance to direct current. The superconductor may be classified into a low temperature superconductor and a high temperature superconductor according to the size of the critical temperature, and may be classified into a metal superconductor, an oxide superconductor, and an organic superconductor, depending on the type of superconducting material. The oxide superconductor is commonly referred to as a 'high temperature superconductor' because it has a significantly higher critical temperature than the metal superconductor and the organic superconductor.

Since the oxide superconductor was discovered in 1986 by A. Bednortz and Karl A. Muller of the IBM Institute of Switzerland, La-Ba-Cu-O has superconducting properties at 35K, Superconductors having a critical temperature (Tc) higher than the boiling point of liquid nitrogen (e.g., Y1Ba2Cu3O7 (Tc = 92K), bismuth compound Bi2Sr2Ca1Cu2O8 (Tc = 110K), thallium compound Tl2Ba2Ca2Cu3O10 (Tc = 125gu2C2C2C2C2C2C2C2Cu2Cu2Cu2Cu2Cu2Cu2Cu2Cu2C2Cu2Cu2Cu2Cu2Cu2Cu2Cu2CuC2C2C2C2Cu2Cu2C2Cu2CuC2C2C2C2Cu2C2Cu2CuC2Cu2C2Cu2C2Cu2C2Cu2C2Cu2Cu2Cu2Cu2Cu2Cu2Cu2Cu2 = 133 K), etc.) were synthesized in order. In this case, since the liquid nitrogen is an inexpensive refrigerant, the high temperature superconductor can be used in various industrial fields, and research on this has been actively conducted.

Specifically, the superconductor is a power field that generates or transports large currents such as superconducting magnets, energy storage devices, motors, generators, transformers, etc. that generate lossless power lines, strong or stable magnetic fields. And superconducting maglev trains and superconducting propulsion vessels. In this field, a superconductor in the form of wire (hereinafter, superconducting wire) is used. In addition, the superconductor may be used in an active device such as a passive device using a low current loss characteristic of a thin film and a Josephson junction using a superconducting junction, and a superconductor in the form of a thin film is used in this field.

In particular, the thin film type superconducting wires on which the high temperature superconductor is deposited on a metal tape such as Ni having excellent malleability or ductility have a current carrying capacity per unit area which is much superior to that of general metal wires. However, since the high temperature superconductor is a polycrystalline state in which a plurality of grains are disorderedly coupled, there is a problem that it is difficult to improve its superconducting properties (particularly, the critical current density). More specifically, each grain of the high temperature superconductor is oriented in one direction (eg, perpendicular to the substrate surface) (ie, c-axis) but disorderly in two other directions (ie, a and b axis). Therefore, the crystal angle (hereinafter, the boundary angle) between two adjacent grains may have various values. As a result, superconducting coherence or quantum coupling, which determines the superconductivity, is lost.

In particular, it is required to reduce the boundary angle of the crystal grains in that the critical current density of the superconductor showing the maximum current density that can flow per unit area increases as the boundary angle decreases. For example, when the boundary angle is 10 degrees or more, the critical current density of the superconductor decreases rapidly. According to the prior art, a rolling assisted biaxially textured substrate (RABiTS) technique and an ion beam assisted deposition (IBAD) technique have been proposed as a method for solving the reduction of the critical current density due to such disordered boundary angles. These techniques relate to a method of making a rare earth oxide high temperature superconductor such as YBCO to have biaxial alignment in the plane direction of the thin film.

Among them, the IBAD technology is to deposit a thin film having biaxial orientation by heating an elongated metal substrate and injecting an ion beam toward the substrate at the same time as depositing a thin film. At this time, the long metal substrate is continuously supplied and must be transported continuously with constant tension without shaking, deformation and sag.

An object of the present invention is to provide a system for manufacturing a superconducting wire that can prevent the vibration of a high-speed moving metal substrate during continuous deposition on a long metal substrate using the IBAD method.

In addition, an object of the present invention is to provide a system for manufacturing a superconducting wire that can control the deposition area of the metal substrate moving at high speed when the continuous deposition on the long metal substrate using the IBAD method.

It is also an object of the present invention to provide a system for manufacturing a superconducting wire that can prevent the material from being deposited by a heater that heats the metal substrate when the material is continuously deposited on the long metal substrate using the IBAD method.

According to a feature of the present invention for achieving the above object, a system for manufacturing a superconducting wire is for multi-turning the metal wire in the deposition region to continuously deposit a biaxially oriented thin film on the metal wire that is the base material of the superconducting wire A transfer part having a first reel member and a second reel member; A heating member for heating the metal wire which is multiturned by the first reel member and the second reel member; A deposition member for depositing a material on the metal wire passing through the deposition region; An ion implantation member for irradiating an ion beam to a thin film deposited on a metal wire; And an adjusting member for adjusting the deposition region.

According to an embodiment of the present invention, the adjusting member includes a plurality of rods movably installed in the longitudinal direction of the metal wire at a position corresponding to each of the metal wire passing through the deposition region.

According to an embodiment of the present invention, the adjusting member includes a bracket; It includes a plurality of rods installed in the bracket, the rods are installed in the bracket so as to be movable in the longitudinal direction of the metal wire to adjust the exposure length of the metal wire passing through the deposition area.

According to an embodiment of the present invention, the system further includes a support plate for supporting the rear surface of the metal wire to prevent vibration and twisting of the metal wire passing through the deposition region.

According to an embodiment of the present invention, the support plate includes a flat support surface for supporting the metal wire, and the inclined surface extending with a predetermined inclination angle from both ends of the support surface.

According to an embodiment of the invention, the support plate is located between the heating member and the metal wire.

According to an embodiment of the present invention, the support plate is made of a transparent quartz material so that the light of the heating member is provided as a metal wire.

According to an embodiment of the invention, the heating member is made of a planar halogen heater, the system further comprises a support plate for supporting the back of the metal wire to prevent vibration and twisting of the metal wire passing through the deposition area. do.

According to an embodiment of the present invention, the support plate is made of a transparent quartz material so that the light of the heating member is provided as a metal wire.

According to an embodiment of the present invention, the support plate is fixed to the heating member.

According to an embodiment of the invention, the first reel member and the second reel member is a multi-turn structure consisting of a plurality of reels.

For example, embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape of the elements in the drawings and the like are exaggerated to emphasize a clearer description.

Hereinafter, an embodiment of the present invention will be described in more detail with reference to FIGS. 1 to 7B. In the drawings, the same reference numerals are given to components that perform the same function.

1 is a block diagram illustrating an ion beam assisted deposition (IBAD) system for manufacturing a metal wire having biaxial orientation according to an embodiment of the present invention.

Here, the metal wire is used as a base material of a high temperature superconductor (HTS) wire. In the IBAD system of the present invention, after biaxially orienting a material such as YSZ, GZO, MgO, etc. on the surface of the metal wire, an IBAD template process of depositing oxide films such as CeO 2, LMO, STO, and SRO is performed.

Referring to FIG. 1, the IBAD system 10 for manufacturing a metal wire having biaxial orientation is largely composed of an upper chamber 20 and a lower chamber 30. The upper chamber 20 and the lower chamber 30 are partitioned by the partition 40, and an opening 42 is formed in the partition 40 to connect the upper chamber 20 and the lower chamber 30. Here, the opening 42 formed in the partition 40 corresponds to the deposition region.

The lower chamber 30 includes a deposition member 100 for depositing a material on the metal wire 1 passing through the deposition region, and an ion implantation member 200 for irradiating an ion beam to a thin film deposited on the metal wire 1. Is installed. The apparatus 100 for depositing a material on a metal wire includes sputtering, pulsed laser deposition (PLD), evaporation, chemical vapor deposition, ion beam sputtering, E-beam evaporation and the like, and in this embodiment, an electron beam evaporation apparatus is used. The incident angle of the ion implantation member 200 to the metal wire 1 is 45 degrees.

For reference, outside of the lower chamber 30, a high-speed electron beam diffraction (RHEED), which is one of the surface structure analyzers required to observe the crystallographic orientation of the thin film in-situ when the thin film is deposited. The equipment is installed. The high speed electron beam diffraction apparatus 300 includes a gun 310 for injecting a beam at a small angle of about 1-3 degrees to the surface of the metal wire 1, and a screen in which the reflected / diffracted beam is opposite to the gun ( screen (320) includes a CD (CCD) camera 330 to photograph it.

Meanwhile, the transfer chamber 400, the heating member 500, the support plate 600, and the adjustment member 700 are installed in the upper chamber 20. The transfer part 400 is for multi-turning the metal wire 1 on the opening 42 line, which is a deposition area, so as to continuously deposit a biaxially oriented thin film on the tape-type long metal wire 1, and to heat it. The member 500 is for heating the metal wire 1 that is multiturned by the transfer part 400, and the support plate 600 is for preventing vibration and warping of the metal wire 1 that is multiturned. The member 700 is for adjusting the size of the opening 42 which is a deposition region.

First, the transfer unit 400 is a reel to reel for multiturning the wire reel 410 on which the metal wire 1 is wound and the metal wire 1 provided from the supply reel 410 on the opening 42 which is a deposition area. a reel to reel device 420 and a recovery reel 440 which is multi-turned on the opening 42 line by the reel to reel device 420 and the metal wire 1 on which the biaxially oriented thin film is continuously deposited is wound. do.

As shown in FIGS. 1 and 2, the reel to reel device 420 includes a first reel member 422a and a second reel member 422b which are spaced apart from each other with the opening 42 therebetween. The first reel member 422a and the second reel member 422b include fourteen reels 424 for turning the metal wire 1 four times in the deposition region. Each reel 424 is driven independently and is rotated only by friction with the metal wire 1 without interfering with neighboring reels 424. The first reel member 422a and the second reel member 422b are disposed to be shifted by a half position of one pitch that moves laterally when the metal wire 1 transitions by one turn.

In more detail, the first reel member 422a and the second reel member 422b may have the two jaws 425 of the reel 424 in contact with the metal wire 1 to prevent lateral deformation of 3 mm or more. It is preferable to set the angle within the incident angle (0 to 10 degrees) of the metal wire 1. The number of reels 424 that the metal wire 1 contacts when moving one turn is two or more. In this case, the contact surface of the reel 424 is processed or plated with a mirror surface to minimize friction with the metal wire 1. . The surface material of the reel 424 in contact with the metal wire 1 is preferably equal to or greater in strength and hardness than the metal wire 1.

The heating member 500 is made of a halogen lamp, the first reel member 422a and the second reel to heat the multi-turned metal wire 1 wound around the reel to reel device 420 to a high temperature of 400-500 ℃ It is arranged between the members 422b.

2 to 4, the support plate 600 prevents vibration and distortion of the multi-turned metal wire 1 and at the same time, a material deposited on the metal wire 1 is not deposited on the heating member 500. It also serves as a shield. The support plate 600 is disposed between the heating member 500 and the metal wire 1 passing through the opening 42, which is a deposition region, and is formed on the back surface of the metal wire 1 (opposite to the surface on which the biaxially oriented thin film is deposited). ). The support plate 600 has a flat support surface 610 having a constant width in the Y-axis direction across the metal wire 1 with respect to the center line c, and extends with a predetermined inclination angle from both ends of the support surface 610. The inclined surface 620 is formed and a fixed portion 630 is formed at the end of the inclined surface 620 is fitted to the heating member 500 and fixed. The inclined surface 620 preferably forms an angle of less than 1 degree with the support surface 610, and the support plate 600 is disposed at the center of the opening 42 where the support surface 610 is a deposition region in the Y-axis direction. .

On the other hand, the support plate 600 is made of a transparent quartz (quartz) material so that the light of the heating member 500 is provided to the metal wire (1). Since the support plate 600 has excellent heat resistance and very little thermal expansion, the support plate 600 is suitable for a high temperature heat treatment process, and has an advantage of chemical stability, electrical insulation, and excellent light transmittance. It is suitable for use in high temperature processes of more than 400 degrees.

As described above, the support plate 600 prevents vibration and warping of the metal wire 1 moving at a high speed so that the deposition material is evaporated by an e-beam to uniformly deposit it on the surface of the metal wire 1. Helps to move as it is deposited. In addition, the support plate 600 transmits the light of the heating member 500 to the metal wire 1, but prevents the deposition material from being deposited on the heating member 500 to extend the life of the heating member 500 and Help maintain functionality

4 to 6, it can be seen that the adjusting member 700 adjusts the size of the opening 42, which is a deposition region. The adjusting member 700 is composed of two fixing brackets 710a and 710b and 28 rods 720. The X axis shown in FIG. 5 represents the direction in which the metal wire 1 is conveyed. The rods 720 are made of quartz and have an opaque color that is not heat treated.

The two fixing brackets 710a and 710b are arranged symmetrically on both sides about the centerline c of the opening 42. Fourteen rods 720 are installed on the fixing brackets 710a and 710b to be movable in the X-axis direction. That is, an interval between two rods 720 installed on both fixing brackets 710a and 710b to face each other corresponds to an interval in which the metal wire 1 to be turned is exposed to the deposition region, and between the rods 720 opposite to each other. By adjusting the spacing, it is possible to adjust the spacing between the metal wire 1 is exposed to the deposition region.

Each of the rods 720 is fixed to the fixing brackets 710a and 710b by two bolts 740. For fastening the bolts, first fastening holes 712 having long holes formed in the X-axis direction are formed in the fixing brackets 710a and 710b, and circular second fastening holes 722 are formed in the rod 720. The rods 720 are manufactured to have different lengths according to positions installed on the fixing brackets 710a and 710b. That is, the length of the rods 720 installed at the edges of the fixing brackets (710a, 710b) is the longest, and the length is shortened toward the center. When 28 rods 720 are installed in the two fixing brackets 710a and 710b, it can be seen that the openings near the circle are provided by the 28 rods 720. That is, if the rods 720 are positioned at the fixing brackets 710a and 710b or if the rods 720 are arranged with different lengths, the size of the opening 42 as the deposition region may be adjusted.

For example, in the IBAD system 10 in which the metal wire 1 is deposited by moving 14 turns, an important factor to be considered in the deposition is the size of the ion implantation member 200 and the straightness according to the incident angle of the implantation ion. The ion implantation member 200 mounted on the IBAD system 10 according to the present embodiment has a grid size of 30 cm, a beam divergence angle of about 9 degrees, and an incident angle of 45 degrees with respect to the deposition region. Is keeping. According to the present invention, the deposition area may be adjusted by moving the positions of the rods 720 of the adjusting member 700 left and right in the X direction or replacing the rods 720 having different lengths according to the characteristics of the ion implantation member 200. have.

 As shown in FIG. 7A, when the gap between the rods 720 facing each other is closer to each other, the space in which the metal wire 1 is exposed to the deposition region is reduced. As shown in FIG. 7B, when the gaps between the opposite rods 720 are arranged to be far from each other, the space in which the metal wire 1 is exposed to the deposition region is widened.

 As described above, the rods 720 for controlling the deposition region applied to the IBAD system 10 are uniformity, reproducibility, and process of the deposition process for manufacturing the wired metal wire of 100 m or more, which is almost single crystal. It is essential to the optimization of throughput.

In the above, the configuration and operation of the system for manufacturing the superconducting wire according to the present invention is shown in accordance with the above description and drawings, but this is merely described, for example, various changes and within the scope not departing from the technical spirit of the present invention. Of course, change is possible.

The present invention has a special effect that can prevent the vibration of the metal substrate moving at high speed during continuous deposition on a long metal substrate.

The present invention has a particular effect of controlling the deposition region of the metal substrate moving at high speed when the continuous deposition on the long metal substrate using the IBAD method.

In addition, the present invention has a special effect that can prevent the material is deposited by a heater that heats the metal substrate when the material is continuously deposited on the long metal substrate using the IBAD method.

Claims (11)

In systems for manufacturing superconducting wires: A transfer part having a first reel member and a second reel member for multiturning the metal wire in a deposition region to continuously deposit a biaxially oriented thin film on a metal wire which is a base material of a superconducting wire; A heating member for heating the metal wire which is multiturned by the first reel member and the second reel member; A deposition member for depositing a material on the metal wire passing through the deposition region; An ion implantation member for irradiating an ion beam to a thin film deposited on a metal wire; And System for manufacturing a superconducting wire, characterized in that it comprises a control member for adjusting the deposition area. The method of claim 1, The adjusting member is And a plurality of rods movably installed in the longitudinal direction of the metal wire at positions corresponding to the metal wires passing through the deposition region. The method of claim 1, The adjusting member is Brackets; It includes a plurality of rods installed in the bracket, And the rods are mounted to the bracket so as to be movable in the longitudinal direction of the metal wire to adjust the exposure length of the metal wire passing through the deposition region. The method according to claim 1 or 2, The system And a support plate for supporting a rear surface of the metal wire to prevent vibration and twisting of the metal wire passing through the deposition region. The method of claim 4, wherein The support plate includes a flat support surface for supporting the metal wire, and the inclined surface extending from the both ends of the support surface with a predetermined inclination angle formed. The method of claim 4, wherein And the support plate is located between the heating member and the metal wire. The method of claim 4, wherein The support plate is a system for manufacturing a superconducting wire, characterized in that made of a transparent quartz material so that the light of the heating member is provided to the metal wire. The method of claim 1, The heating member is made of a flat halogen heater, The system And a support plate for supporting a rear surface of the metal wire to prevent vibration and twisting of the metal wire passing through the deposition region. The method of claim 8, The support plate is a system for manufacturing a superconducting wire, characterized in that made of a transparent quartz material so that the light of the heating member is provided to the metal wire. The method of claim 8, And said support plate is secured to said heating member. The method of claim 1, The first reel member and the second reel member is a system for manufacturing a superconducting wire, characterized in that the multi-turn structure consisting of a plurality of reels.

Images