JPH05320906A - Film forming method and device therefor - Google Patents

Abstract

PURPOSE:To form a highly adhesive film without decreasing productivity by forming a mixed layer of a substrate material atom and a vapor-deposition material on the specified part on the substrate surface and vacuum-depositing a film on the mixed layer while moving the substrate in a specified direction. CONSTITUTION:The desired material in a vaporization source 5 is vaporized and vacuum-deposited on the surface of a substrate T, and the surface is simultaneously irradiated with an ion beam of such an inert gas as argon from an ion source 4. When a mixed layer is formed on the specified part of the substrate T, a coupling 31 on the reel 3 side is detached, a coupling 21 on the reel 2 side is attached, the substrate T is rewound by a motor 22 from the reel 3 to the reel 2, and the substrate T is continuously moved in the opposite direction. Meanwhile, the ion source 4 is stopped, and the source 5 is vaporized under the command of a control member 51 so that a vacuum-deposited film is formed on the mixed layer in a specified thickness. A vacuum-deposited film having a specified thickness is continuously formed on the first mixed layer in this way.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming method for continuously forming a desired film on the surface of various substrates made of a polymer material, metal, glass, ceramic or the like, and an apparatus for carrying out the method.

[0002]

2. Description of the Related Art In recent years, a metal film which is a wiring precursor is formed on a printed wiring board made of a polymer material, a corrosion resistant film is formed on the surface of a base material such as a stainless steel plate, and a glass substrate for a liquid crystal display. When forming the semiconductor film of
It is widely practiced to deposit a predetermined substance on the surface of a substrate by vacuum deposition to form a film.

Such vacuum evaporation film formation has an advantage that the film formation speed is higher than that of the film formation by the sputtering method. However, in film formation by vacuum vapor deposition, mutual adhesion at the interface between the surface of the substrate and the film formed thereon is weak, and there is a problem that the film may peel off from the substrate during processing of the substrate after film formation. For example, a polyimide film is used as a printed wiring board, and A for wiring is formed on the surface of the polyimide film.
In the case of forming an I film, the Al film peels off when the film is exposed to high temperature and low temperature after the film formation, and when the Al film is formed on the stainless steel plate to prevent its corrosion, After the film, the stainless steel plate is bent,
There is a problem that the Al film may be broken or peeled off by pressing or the like.

In order to solve such a problem, a powerful method that has been conventionally proposed is to use ion irradiation in combination with vacuum deposition of a predetermined substance on the surface of a substrate, and by this ion irradiation, atoms constituting the substrate material are formed on the surface of the substrate. This is a method of forming an adhesion mixed layer (mixing layer) with the atoms constituting the vapor deposition substance, and forming a vapor deposition film of a similar material with a predetermined thickness on the mixture layer with good adhesion.

The formation of the mixing layer for enhancing the adhesiveness does not require the entire film thickness to be formed. Only the vicinity of the interface between the substrate and the film is ion-irradiated, and after the mixing layer is formed, an arbitrary film is formed by vacuum vapor deposition. It is formed to a thickness. Further, in such vacuum evaporation film formation combined with ion irradiation, it has been proposed that the film is formed by continuously moving a strip-shaped or plate-shaped substrate in order to improve film formation efficiency.

FIG. 3 shows an example of an apparatus for carrying out such continuous film formation. According to this apparatus, there are two portions 91 in the vacuum container 9 which can be maintained at a predetermined film formation vacuum degree by an exhaust device (not shown). , 92. A predetermined material evaporation source 93 and an ion source 94 for forming a mixed layer are provided on one portion 91.
However, a predetermined material evaporation source 95 for forming a vapor deposition film having a predetermined thickness on the mixed layer is arranged in the other portion 92. The substrate 96 is passed from one portion 91 to the other portion 92, and after forming a mixed layer at the portion 91, a vapor deposition film having a predetermined thickness is formed at the portion 92.

The reason why the inside of the vacuum chamber 9 is divided into the two film forming portions 91 and 92 is that the ion irradiation dose is set in the step of forming the mixed layer when the film forming conditions are determined according to the moving speed of the substrate. It is necessary to adjust the vapor deposition rate to a small value in order to improve the overall film deposition rate, and it is necessary to make the vapor deposition rate significantly different between the step of forming the mixed layer and the subsequent step of forming the vapor deposition film. Because.

In addition to this, the method and apparatus described in JP-A-60-141869 are also proposed. According to this film forming method and apparatus, the first ion source, the first evaporation source, the second ion source, the second ion source, and the second ion source are provided in the vacuum container along the feeding direction of the substrate.
An evaporation source (which may be combined with an ion plating means) is arranged, and pretreatment such as cleaning and activation of the substrate surface is performed by ion irradiation from the first ion source, and then the mixed layer is formed in the first evaporation source. Form a vapor deposition film for formation,
Next, a mixed layer is formed by ion irradiation with a second ion source, and a vapor deposition film having a predetermined thickness is formed on the mixed layer with a second evaporation source.

[0009]

However, according to the film forming method and apparatus shown in FIG. 3 and Japanese Patent Laid-Open No. 60-141869, at least one ion source and one evaporation for forming a mixed layer. The number of evaporation sources is large, and the film forming cost is accordingly high.

Further, according to the method and apparatus disclosed in Japanese Patent Laid-Open No. 60-141869, in forming a mixed layer, a vapor deposition film is formed first by a first evaporation source and then by a second ion source. Since the ion implantation is performed, the ion energy by the second ion source must be increased by that much. Alternatively, it is conceivable that the feeding speed of the substrate is significantly reduced, but this lowers the productivity.

Therefore, the present invention provides a film forming method and a film forming apparatus which are simpler, cheaper than conventional ones, and which can continuously form a film having good adhesion on a substrate without significantly lowering productivity. The task is to do.

[0012]

According to the method of the present invention for solving the above-mentioned problems, a substrate to be film-formed is continuously moved in a fixed direction while a predetermined substance is vacuum-deposited from an evaporation source on the surface of the substrate, and an ion source is also used. From the substrate to form a mixed layer of substrate material atoms and vapor-deposited substance atoms on the surface of the substrate, and after forming a mixed layer over a predetermined portion of the substrate surface by the above-mentioned step, And vacuum-depositing a film having a predetermined thickness on the formed mixed layer by the evaporation source while continuously moving in the same direction or in the opposite direction.

The device of the present invention for solving the above-mentioned problems is
Means for continuously moving the substrate to be film-formed, one evaporation source for performing vacuum deposition of a predetermined substance on the surface of the moving substrate, and irradiating the surface of the moving substrate with ions And one means for continuously moving the substrate to move the substrate in a fixed direction in a step of forming a mixed layer of substrate material atoms and vapor deposition substance atoms by the evaporation source and the ion source. In the step of forming a vacuum-deposited film having a predetermined thickness on the mixed layer with the evaporation source, the substrate is moved in the same or opposite direction as the moving direction of the substrate when the mixed layer is formed. To do.

Various means for continuously moving the substrate in the method and apparatus of the present invention can be considered. For example, when the base body is in the form of an endless belt, a moving means including a plurality of pulleys for rotating the base body is used, and when the base body is in the form of a flexible belt, a feeding reel, a drum or the like for reciprocating the base body is used. Moving means including take-up reel and drum,
When the substrate is plate-shaped, various conveyors such as a roller conveyor that reciprocates the substrate can be considered.

In the method and apparatus of the present invention, the substrate is fed in the step of forming the vapor deposition film having a predetermined thickness on the mixed layer, when the substrate is, for example, an endless belt and is rotated and fed. The feeding direction in the mixed layer forming step may be the same or opposite, and the substrate has a strip shape, a plate shape, or the like,
When it is sent by a reel device, a conveyor device, or the like, it may be considered that the direction is opposite to that when the mixed layer is formed.

[0016]

According to the method and apparatus of the present invention, the substrate to be film-formed is continuously moved in a fixed direction, and a predetermined substance is vacuum-deposited from the evaporation source on the surface of the substrate and ions are irradiated from the ion source. A mixed layer of substrate material atoms and vapor deposition substance atoms is formed on the surface of the substrate. Thus, after a mixed layer is formed on a predetermined portion of the surface of the substrate, the substrate is continuously moved in the same direction or in the opposite direction to the same evaporation source as the above on the formed mixed layer. As a result, a film having a predetermined thickness is formed by vacuum vapor deposition.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An example of a film forming method according to the present invention and an example of a film forming apparatus for carrying out the method will be described below with reference to the drawings. Figure 1
Shows a schematic configuration of an example of such a film forming apparatus. The film forming apparatus of FIG. 1 is provided with a film forming vacuum container 1 in the center. Auxiliary vacuum chambers 11 and 12 are sequentially connected to one side of the container 1, and a reel 2 is arranged outside them.
Further, auxiliary vacuum chambers 13 and 14 are sequentially connected to the other side portion of the container 1, and a reel 3 is arranged outside them.

A motor 22 is connected to the reel 2 via a coupling device 21 such as an electromagnetic clutch which can be engaged and disengaged.
To the motor 32 via a coupling device 31 such as an electromagnetic clutch.
Are connected. The reel 2 can be driven to rotate clockwise in the figure by engaging the joint device 21 and turning on the motor 22, and the reel 3 can engage the joint device 31 and turning on the motor 32 in the figure. It can be driven to rotate counterclockwise.

The partition walls between the auxiliary vacuum chambers 12 and 14 at the ends and the outside, the partition walls between the auxiliary vacuum chambers (11 and 12) and (13 and 14), the auxiliary vacuum chambers 11 and 13 and the vacuum container 1. Each partition wall has a through hole 1 which is as small as possible and allows a strip-shaped substrate T supported between reels 2 and 3 to pass therethrough.
2a, 11a, 1a, 1b, 13a, 14a are provided. In the figure, 15 and 16 are a pair of guide rollers provided in the container 1 for guiding the base body.

Further, the vacuum container 1, the auxiliary vacuum chambers 11, 1
Vacuum pump connection portions 1c, 1 are provided for 2, 13, and 14 respectively.
1b, 12b, 13b, 14b are provided, and a vacuum pump (not shown) is connected to them, whereby the inside of the container and each chamber can be evacuated to maintain the inside of the container 1 at a predetermined film forming vacuum degree. In the vacuum container 1, an ion source 4 is arranged nearer to the reel 2 and an evaporation source 5 is arranged nearer to the reel 3, which are the surfaces of the substrate T which is supported and moved by the reels 2 and 3. It faces the moving path from below.

The ion source 4 is capable of irradiating the surface of the substrate T with a surface ion beam. Also, the evaporation source 5
Is, but is not limited to, an electron beam evaporation source (EB evaporation source). The ion source 4 and the evaporation source 5 are arranged so that the center of the ion beam arrival region from the ion source 4 on the surface of the substrate T and the center of the evaporated particle arrival region from the evaporation source 5 are substantially coincident with each other.

Further, a film thickness monitor 6 for measuring the amount of vapor deposition is arranged in a part of the area where the evaporated substance can reach, and a beam monitor 7 for measuring the amount of ion irradiation is arranged in a part of the area where the ions can reach. I am doing it. The ion source 4 and the evaporation source 5 are connected to the control unit 51 for controlling the ion irradiation amount and the vapor deposition amount, and the outputs of the monitors 6 and 7 are input to them through lines (not shown). According to the instruction from the control unit, the ion source 4 performs necessary and appropriate ion irradiation when forming the mixed layer, and the evaporation source 5 has different vapor deposition amounts when the mixed layer is formed and when the vapor deposition film is formed on the mixed layer. Let According to the film forming apparatus described above, the method of the present invention is carried out as follows.

A strip-shaped substrate T to be film-formed is wound in advance on the reel 2, and the lead ends of the substrate are passed through the auxiliary vacuum chambers 11, 12, 13, 14 and the through holes 11a, 12a in the vacuum container 1. , 13a, 14a, 1a, 1b
, And connect to another reel 3. In this state, the coupling device 21 on the reel 2 side is detached, and the coupling device 31 on the reel 3 side is engaged. Thus, the auxiliary vacuum chambers 11, 12, 13, 14 and the vacuum container 1 are evacuated by a vacuum pump (not shown), and the inside of the vacuum container 1 is reduced to about 1 × 10.
^-6 to 1 × 10 ^-4 (Torr) film formation vacuum is maintained.

Thus, the evaporation source 5 evaporates a substance such as a target metal previously stored in the evaporation source 5 and vacuum-deposits it on the surface of the substrate T, and at the same time, from the ion source 4 to the surface of the ion beam of an inert gas such as argon gas. On the other hand, the motor 3 on the reel 3 side is operated to wind the substrate T from the reel 2 to the reel 3, and the substrate T is continuously moved in a fixed direction at a predetermined speed.

Thus, the target substance is vacuum-deposited on the continuously moving surface of the substrate T, and at the same time, the target substance is irradiated with ions to continuously form a mixed layer of the atoms constituting the substrate material and the atoms constituting the target substance on the surface of the substrate. To form. In the formation of this mixed layer, the evaporation amount of the target substance and the ion irradiation are such that the transport ratio (the vapor deposition reaching the surface of the substrate per unit time and unit area) is such that good adhesion can be obtained with respect to the current density of the ion source 4. The control unit 51 adjusts so as to show the ratio M / N of the number M of substance atoms and the number N of ions. Although the ion species and energy during ion irradiation, the transport ratio, and the mixed layer thickness differ depending on the material to be deposited and the type of substrate, the ion energy is 500.
eV to 20 KeV, transport ratio (M / N) is about 10 to 1
000, and a mixed layer thickness of 100 to 3000Å is preferable. By this step, a mixed layer that enhances adhesion is formed on the substrate. If the transport ratio (M / N) is smaller than 10 (in other words, if the ratio of ion irradiation is large), the damage to the substrate becomes large, and the adhesion is lowered.
If it is larger (in other words, if the proportion of ion irradiation is smaller), a sufficient mixed layer cannot be formed.

When the mixed layer is formed on the predetermined portion of the base T in this way, the joint device 3 on the reel 3 side is next.
1 is disengaged, the coupling device 21 on the reel 2 side is engaged,
The base T is moved from the reel 3 to the reel 2 by the operation of the motor 22.
The substrate T is continuously rewound in the direction opposite to that in the mixed layer forming step. Further, with the movement in the opposite direction, the ion source 4 is stopped while the evaporation source 5
In accordance with an instruction from the control unit 51, the operation is performed with an evaporation amount for forming a vacuum deposition film having a predetermined thickness on the mixed layer.

Thus, a vacuum-deposited film having a predetermined thickness is continuously formed on the mixed layer formed in the first step, and the film formation is completed. The film thus obtained on the substrate T has a mixed layer with good adhesion formed at the interface with the material of the substrate T.
As a whole, the adhesion to the substrate T is good. Further, this film having good adhesion is obtained easily and inexpensively by using one ion source and one evaporation source as described above.

Further, since the substrate T is continuously fed in both of the above steps, the productivity of the film is good.
Next, a specific example of film formation by the apparatus will be described. Substrate T: Strip-shaped stainless steel plate Feed rate: 6 m / min in both steps Vapor deposition material by evaporation source 5: Aluminum Deposition degree of vacuum: 5.0 × 10 ⁻⁵ Torr Deposition rate by evaporation source 5 during mixed layer formation : 500Å / s
ec Deposition rate on the mixed layer by the evaporation source 5: 2000Å / s
ec Ion source 4: Ion species Argon ions Energy 2 KeV Beam current density 0.8 mA / cm ² .

Plane ion beam size on the substrate surface: 150 mm in the substrate feed direction and 700 mm in the direction perpendicular thereto. Transport ratio when forming mixed layer M / N: Al / Ar ions = 60 Thus, the mixed layer thickness is about 1000 on the stainless steel plate.
Å, Al film with good adhesion with Al film thickness of about 1 μm was formed.

In order to test the adhesion of this Al film, as a comparative example, a mixed layer was not formed by ion irradiation, and a stainless steel plate on which an Al film was formed was prepared in the same manner as in the above specific example under other conditions. Was exposed to a temperature of 150 ° C., and a peeling strength test of the Al film was carried out according to JISC-5016 every predetermined time, and the results shown in FIG. 2 were obtained. In the graph of FIG. 2, the circled line is A according to a specific example.
For the l film, the □ line indicates the comparative example.

As can be seen from the test results, in the comparative example in which the mixed layer was not formed by using the ion irradiation, the adhesion of the Al film was significantly decreased with the passage of time.
A according to the present invention in which a mixed layer is formed by using ion irradiation together
The l film maintains a stable adhesive force over time. It should be noted that the present invention is not limited to the above-mentioned embodiment, and can be carried out in various other modes. For example, the reels 2 and 3 are installed in the vacuum container 1, and the auxiliary vacuum chambers 11 to 14 are
May be omitted.

Further, a part of the ion irradiation from the ion source 4 may be used for pretreatment ion irradiation before forming the mixed layer.
In this case, a part of the ion irradiation may be directed to the front area where vaporized particles do not reach.

[0033]

As described above, according to the present invention, it is possible to form a film having good adhesion continuously on a substrate in a simpler and cheaper method than before, and without significantly lowering productivity. A method and a film forming apparatus can be provided.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of an example of a film forming apparatus used for carrying out a method of the present invention.

FIG. 2 is a graph showing a peel strength test result of an Al film on a stainless steel plate.

FIG. 3 is an explanatory diagram of a conventional example.

[Description of Reference Signs] 1 vacuum container 11, 12, 13, 14 auxiliary vacuum chamber 11a, 12a, 13a, 14a, 1a, 1b substrate through hole 2, 3 reel 21, 31 coupling device 22, 32 reel drive motor 4 ion source 5 evaporation source 51 control unit 6 film thickness monitor 7 beam monitor T substrate

Claims (2)

[Claims] 1. A substrate on which a film is to be formed is continuously moved in a certain direction, a predetermined substance is vacuum-deposited from an evaporation source on the surface of the substrate, and ions are irradiated from an ion source to form substrate material atoms on the surface of the substrate. A step of forming a mixed layer with vapor deposition substance atoms, and a step of forming a mixed layer through a predetermined portion of the surface of the substrate by the above step, and continuously moving the substrate in the same direction or in the opposite direction. Forming a film of a predetermined thickness on the formed mixed layer with the evaporation source by vacuum vapor deposition. 2. A means for continuously moving a substrate to be formed a film, one evaporation source for performing vacuum deposition of a predetermined substance on the surface of the moving substrate, and a surface of the moving substrate. And a single ion source for irradiating ions toward the target, and the means for continuously moving the substrate keeps the substrate constant in a step of forming a mixed layer of substrate material atoms and vapor deposition substance atoms by the evaporation source and the ion source. In the step of forming a vacuum-deposited film having a predetermined thickness on the mixed layer by the evaporation source, the substrate is moved in the same direction or in the opposite direction to the moving direction of the substrate when the mixed layer is formed. A film forming apparatus characterized by the above.