KR102580635B1 - 전력 장치를 병렬화하기 위한 낮은 인덕턴스와 빠른 스위칭을 갖는 고전력 다층 모듈 - Google Patents
전력 장치를 병렬화하기 위한 낮은 인덕턴스와 빠른 스위칭을 갖는 고전력 다층 모듈 Download PDFInfo
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- KR102580635B1 KR102580635B1 KR1020217025359A KR20217025359A KR102580635B1 KR 102580635 B1 KR102580635 B1 KR 102580635B1 KR 1020217025359 A KR1020217025359 A KR 1020217025359A KR 20217025359 A KR20217025359 A KR 20217025359A KR 102580635 B1 KR102580635 B1 KR 102580635B1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/327—Means for protecting converters other than automatic disconnection against abnormal temperatures
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R22/00—Arrangements for measuring time integral of electric power or current, e.g. electricity meters
- G01R22/06—Arrangements for measuring time integral of electric power or current, e.g. electricity meters by electronic methods
- G01R22/061—Details of electronic electricity meters
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/14—Arrangements for reducing ripples from dc input or output
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Thermal Sciences (AREA)
- Electromagnetism (AREA)
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (1)
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KR1020237027356A KR20230125332A (ko) | 2019-01-10 | 2020-01-03 | 전력 장치를 병렬화하기 위한 낮은 인덕턴스와 빠른스위칭을 갖는 고전력 다층 모듈 |
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US16/266,771 | 2019-02-04 | ||
US16/266,771 US10749443B2 (en) | 2017-01-13 | 2019-02-04 | High power multilayer module having low inductance and fast switching for paralleling power devices |
US201962914847P | 2019-10-14 | 2019-10-14 | |
US62/914,847 | 2019-10-14 | ||
US16/658,630 | 2019-10-21 | ||
US16/658,630 US10917992B2 (en) | 2017-01-13 | 2019-10-21 | High power multilayer module having low inductance and fast switching for paralleling power devices |
PCT/US2020/012167 WO2020146204A1 (en) | 2019-01-10 | 2020-01-03 | High power multilayer module having low inductance and fast switching for paralleling power devices |
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KR1020237027356A Division KR20230125332A (ko) | 2019-01-10 | 2020-01-03 | 전력 장치를 병렬화하기 위한 낮은 인덕턴스와 빠른스위칭을 갖는 고전력 다층 모듈 |
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KR1020237027356A KR20230125332A (ko) | 2019-01-10 | 2020-01-03 | 전력 장치를 병렬화하기 위한 낮은 인덕턴스와 빠른스위칭을 갖는 고전력 다층 모듈 |
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BR (1) | BR112021013650A8 (pt) |
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US11582866B1 (en) | 2021-07-22 | 2023-02-14 | Toyota Motor Engineering & Manufacturing North America, Inc. | Systems including a power device-embedded PCB directly joined with a cooling assembly and method of forming the same |
DE102022200892A1 (de) | 2022-01-27 | 2023-07-27 | Robert Bosch Gesellschaft mit beschränkter Haftung | Spannungswandler und Spannungswandlermodul |
US20230411359A1 (en) * | 2022-06-20 | 2023-12-21 | Wolfspeed, Inc. | Power module |
DE102022124175B3 (de) * | 2022-09-21 | 2023-08-03 | Schaeffler Technologies AG & Co. KG | Inverter, Verfahren zur Herstellung eines Inverters und elektrische Maschine |
FR3147461A1 (fr) * | 2023-03-31 | 2024-10-04 | Valeo Eautomotive Germany Gmbh | Module de puissance |
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US20180206359A1 (en) * | 2017-01-13 | 2018-07-19 | Cree Fayetteville, Inc. | High Power Multilayer Module Having Low Inductance and Fast Switching for Paralleling Power Devices |
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US7965522B1 (en) * | 2008-09-26 | 2011-06-21 | Arkansas Power Electronics International, Inc. | Low-loss noise-resistant high-temperature gate driver circuits |
DE102010050315C5 (de) * | 2010-11-05 | 2014-12-04 | Danfoss Silicon Power Gmbh | Verfahren zur Herstellung von gesinterten, elektrischen Baugruppen und damit hergestellte Leistungshalbleitermodule |
JP5900610B2 (ja) * | 2012-04-16 | 2016-04-06 | 富士電機株式会社 | 半導体装置および半導体装置用冷却器 |
JP5967495B2 (ja) * | 2012-07-04 | 2016-08-10 | パナソニックIpマネジメント株式会社 | 半導体装置 |
JP6085968B2 (ja) * | 2012-12-27 | 2017-03-01 | 三菱マテリアル株式会社 | 金属部材付パワーモジュール用基板、金属部材付パワーモジュール、及び金属部材付パワーモジュール用基板の製造方法 |
WO2015175820A1 (en) * | 2014-05-15 | 2015-11-19 | Cree, Inc. | HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE |
US9839146B2 (en) * | 2015-10-20 | 2017-12-05 | Cree, Inc. | High voltage power module |
CN106374809A (zh) * | 2016-11-04 | 2017-02-01 | 南京怡咖电气科技有限公司 | 一种开关磁阻电动机功率变换器功率器件并联均流装置 |
CN207165544U (zh) * | 2017-06-14 | 2018-03-30 | 扬州国扬电子有限公司 | 一种设有双面散热装置的功率模块 |
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- 2020-01-03 EP EP20738754.9A patent/EP3909124A4/en active Pending
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US20180206359A1 (en) * | 2017-01-13 | 2018-07-19 | Cree Fayetteville, Inc. | High Power Multilayer Module Having Low Inductance and Fast Switching for Paralleling Power Devices |
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EP3909124A1 (en) | 2021-11-17 |
WO2020146204A1 (en) | 2020-07-16 |
KR20230125332A (ko) | 2023-08-29 |
JP2022508473A (ja) | 2022-01-19 |
JP2023029342A (ja) | 2023-03-03 |
BR112021013650A8 (pt) | 2021-09-28 |
CN118573033A (zh) | 2024-08-30 |
BR112021013650A2 (pt) | 2021-09-14 |
CN113767563A (zh) | 2021-12-07 |
KR20210136987A (ko) | 2021-11-17 |
EP3909124A4 (en) | 2022-10-26 |
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