KR102580635B1 - High-power multilayer modules with low inductance and fast switching for paralleling power devices - Google Patents

Abstract

At least one substrate, a housing arranged on the at least one power substrate, a first terminal electrically connected to the at least one power substrate, a second terminal including a contact surface, a third terminal electrically connected to the at least one power substrate. , comprising a plurality of power devices arranged and connected on at least one power substrate, and a third terminal is electrically connected to at least one of the plurality of power devices. The power module further includes a base plate and a plurality of fin fins arranged on the base plate, the plurality of fin fins being configured to provide direct cooling to the power module.

Description

High-power multilayer modules with low inductance and fast switching for paralleling power devices

This application claims priority from U.S. Patent Application No. 16/658,630, filed October 21, 2019, which is hereby incorporated by reference in its entirety for all purposes as if fully set forth herein, filed on February 2, 2019 Priority is further claimed on U.S. Patent Application No. 16/266,771, filed January 4, 2019, which is hereby incorporated by reference in its entirety for all purposes as if fully set forth herein. We further claim priority to U.S. Provisional Patent Application No. 62/790,965, filed October 14, 2019, which is hereby incorporated by reference in its entirety for all purposes as if fully set forth herein. Priority is further claimed for filed U.S. Provisional Patent Application No. 62/914,847, which is incorporated by reference in its entirety for all purposes as if fully set forth herein.

This disclosure relates to high power multilayer modules with low inductance and fast switching for paralleling power devices. Additionally, the present disclosure relates to a process for constructing high power multilayer modules with low inductance and fast switching for paralleling power devices.

As will be appreciated by those skilled in the art, power modules are known in a variety of forms. Power modules typically provide physical containment for power components, such as power semiconductor devices. These power semiconductors are usually soldered or sintered onto power electronic substrates. Power modules typically carry power semiconductors, provide electrical and thermal contact, and include electrical isolation.

Current trends in electrification are increasing the demand for power modules that contain associated power semiconductor devices, power electronics and/or the like. For example, improved efficiency and higher power density. These needs extend from the system level to the component level. However, operation of the power module to meet these demands increases heat generation inside the power module. Increased heat generation limits the ability of power modules to operate due to physical limitations of power semiconductor devices, power electronics, etc. In particular, various components of power modules, including power semiconductor devices, power electronics, etc., generally have operating temperature limitations.

Additionally, the parasitic impedance of power modules limits practical implementation of these devices in current technology. Specifically, loop inductance during switching events can cause voltage overshoot and ringing. This reduces stability, increases switching losses, creates electromagnetic interference (EMI), and places stress on system components. Ultimately, these factors can limit the maximum switching frequency, which is desirable to reduce the size of external filters in power conversion systems.

Therefore, a power module configured to handle the additional heat generation is needed.

Additionally, a power module configured to handle parasitic impedances, such as loop inductance, is needed to increase reliability, reduce switching losses, reduce EMI, and/or limit stress on system components.

One general aspect includes at least one electrically conductive power substrate, a housing arranged on the at least one electrically conductive power substrate, and a first terminal electrically connected to the at least one electrically conductive power substrate, the first terminal being connected to the housing. comprising a contact surface positioned on the housing, a second terminal comprising a contact surface positioned on the housing, a third terminal electrically connected to the at least one electrically conductive power substrate, the at least one electrically conductive power substrate. a plurality of power devices arranged and connected on a base plate, the third terminal being electrically connected to at least one of the plurality of power devices; and a power module including a plurality of pin fins arranged on the base plate, the plurality of pin fins configured to provide direct cooling for the power module.

One general aspect includes a base plate, at least one power board, a housing arranged on the at least one power board, a first terminal, a second terminal, electrically connected to the at least one power board, the at least one power board. a third terminal electrically connected to a third terminal, a plurality of power devices electrically connected to the at least one power board, a gate-source board electrically connected to the plurality of power devices, and a plurality of pin pins arranged on the base plate. and a power module, wherein the plurality of fins are configured to provide direct cooling to the power module.

One general aspect includes providing at least one power substrate, arranging a housing on the at least one power substrate, connecting a first terminal to the at least one power substrate, and providing a second terminal. A step of electrically connecting a third terminal to the at least one power board, connecting a plurality of power devices to the at least one power board, mounting a gate-source board electrically connected to the plurality of power devices. wherein the gate-source board is configured to receive at least one electrical signal, providing a plurality of pin pins arranged on the base plate, and providing a plurality of pin pins to cool at least one component of the power module. A method of configuring a power module comprising configuring a pin of a pin.

Additional features, advantages and aspects of the present disclosure may be described or become apparent from consideration of the following detailed description, drawings and claims. Furthermore, it is to be understood that both the foregoing summary and the following detailed description of the disclosure are exemplary and are intended to provide further explanation without limiting the scope of the disclosure as claimed.

The accompanying drawings, which are included to provide a further understanding of the disclosure, are incorporated in and constitute a part of this disclosure, illustrate aspects of the disclosure, and, together with the detailed description, serve to explain the principles of the disclosure. No attempt has been made to show the structural details of the disclosure in more detail than is necessary for a basic understanding of the disclosure and the various ways in which it may be practiced. In the drawing:
1A schematically illustrates a half-bridge based topology of a power module according to aspects of the present disclosure.
Figure 1B shows the current loop between a DC link capacitor and a switch position inside the power module of Figure 1A.
2 illustrates various interconnections and associated impedances according to aspects of the present disclosure.
3 illustrates various interconnections and associated impedances of switch locations according to aspects of the present disclosure.
4A shows a schematic perspective view of a power module according to aspects of the present disclosure.
4B shows a top schematic diagram of a power module according to aspects of the present disclosure.
5 shows a plurality of single phase modules in a parallel configuration according to aspects of the present disclosure.
6A shows a first power module configuration according to aspects of the present disclosure.
6B illustrates a second power module configuration according to aspects of the present disclosure.
7 illustrates a plurality of power modules in a full bridge configuration according to aspects of the present disclosure.
8 illustrates a plurality of power modules in a three-phase configuration according to aspects of the present disclosure.
9 shows a single power module with a full bridge configuration according to aspects of the present disclosure.
10 shows an exploded view of a power module according to aspects of the present disclosure.
Figure 11 shows a partial view of the power module of Figure 10;
FIG. 12A shows a top view of a phase leg of a power module constructed in accordance with the present disclosure, with each node identified in a half-bridge topology.
FIG. 12B shows a schematic diagram of the phase legs of a power module constructed according to the present disclosure, with each node identified in a half-bridge topology according to FIG. 12A.
Figure 13 shows a cross-sectional view of the phase leg of Figures 12a and 12b.
Figure 14 shows a cross-sectional view of the phase leg of Figures 12A and 12B including the current path.
15 shows a contact surface of a power module with busing according to aspects of the present disclosure.
16A, 16B, and 16C illustrate various aspects of terminals of a power module according to aspects of the present disclosure.
17 schematically shows a plurality of devices connected in parallel according to aspects of the present disclosure.
18 shows a perspective view of an effective gate switching loop according to aspects of the present disclosure.
19 shows a top view of an effective gate switching loop according to aspects of the present disclosure.
20 illustrates a partial example implementation including a power module according to aspects of the present disclosure.
21 illustrates an exemplary stacked bus bar according to the present disclosure.
FIG. 22 shows a portion of an exemplary stacked bus bar according to FIG. 21 ;
Figure 23 shows another part of the exemplary stacked bus bar according to Figure 21;
24 shows a phase output bus bar according to the present disclosure.
Figure 25 shows a perspective view of an example implementation including power modules and stacked bus bars according to aspects of the present disclosure.
FIG. 26 shows a first cross-sectional view of an example implementation comprising a power module according to FIG. 25 and a stacked bus bar.
FIG. 27 shows a second cross-sectional view of an example implementation comprising a power module according to FIG. 25 and a stacked bus bar.
28 and 29 illustrate example single module gate drivers according to the present disclosure.
30 illustrates a current sensing component according to aspects of the present disclosure.
Figure 31 shows a current sensing component arranged with a phase output bus bar according to Figure 30;
32 illustrates exemplary three-phase motor drive power according to aspects of the present disclosure.
33 schematically depicts multiple power devices in parallel according to aspects of the present disclosure.
34 shows a top view of an effective gate switching loop and power module according to aspects of the present disclosure.
Figure 35 shows a perspective view of a configuration including a power module and a housing according to aspects of the present disclosure.
Figure 36 shows a side view of the configuration of Figure 35.
Figure 37 shows a partial perspective view of the configuration of Figure 35;
Figure 38 shows another partial perspective view of the arrangement of Figure 35;
Figure 39 shows another partial perspective view of the arrangement of Figure 35.
Figure 40 shows another partial perspective view of the arrangement of Figure 35.
Figure 41 shows another partial perspective view of the arrangement of Figure 35.
Figure 42 illustrates a process for implementing and operating a configuration including a power module.
Figure 43 shows a perspective bottom side view of a power module according to aspects of the present disclosure.
Figure 44 shows a side view of the power module according to Figure 43;
Figure 45 shows a bottom side view of the power module according to Figure 43;
Figure 46 shows a partial perspective bottom side view of the power module according to Figure 43;
Figure 47 shows a perspective bottom side view of a power module according to aspects of the present disclosure.
Figure 48 shows a side view of the power module according to Figure 47;
Figure 49 shows a bottom side view of the power module according to Figure 47;
Figure 50 shows a partial perspective bottom side view of the power module according to Figure 47;
Figure 51 shows a perspective bottom side view of a power module according to aspects of the present disclosure.
Figure 52 shows a side view of the power module according to Figure 51;
Figure 53 shows a bottom side view of the power module according to Figure 51;
Figure 54 shows a partial perspective bottom side view of the power module according to Figure 51;
Figure 55 shows a perspective bottom side view of a power module according to aspects of the present disclosure.
Figure 56 shows a side view of the power module according to Figure 55;
Figure 57 shows a bottom side view of the power module according to Figure 55;
Figure 58 shows a perspective view of a power module implementation according to aspects of the present disclosure.
Figure 59 shows a perspective view of a power module implementation according to aspects of the present disclosure.
Figure 60 shows a perspective view of a power module implementation according to Figure 59;
Figure 61 shows a graph plotting junction temperature versus output current for two different power modules.

Aspects of the disclosure and its various features and advantageous details are more fully explained by reference to the non-limiting aspects and examples illustrated and/or illustrated in the accompanying drawings and set forth in detail in the description below. It should be noted that the features illustrated in the drawings are not necessarily drawn to scale and that, although not explicitly stated herein, features of one aspect may be used in conjunction with another aspect, as those skilled in the art will recognize. Descriptions of well-known components and processing techniques may be omitted so as not to unnecessarily obscure aspects of the disclosure. The examples used herein are intended solely to facilitate an understanding of how the disclosure may be practiced and to enable any person skilled in the art to practice aspects of the disclosure. Accordingly, the examples and aspects herein should not be construed as limiting the scope of the disclosure, which is defined solely by the appended claims and applicable law. Furthermore, it is noted that like reference numbers indicate like parts throughout the drawings.

This disclosure describes power modules that can include structures optimized for advanced wide gap power semiconductor devices such as gallium nitride (GaN), silicon carbide (SiC), etc., which carry large amounts of current and voltage and are compatible with existing technologies. In comparison, switching can be done at increasingly faster speeds. Existing power electronics packages are limited in functionality for these semiconductors with internal layouts for silicon (Si) device technology.

The disclosed power module can be configured to distribute current evenly among a large array of parallel devices with significantly lower loop inductance than standard packaging approaches. A multi-level current path with cascaded power terminals simplifies external connections with bussing systems, reducing the inductance between the power module and filtering capacitors. The layout of the power module is highly configurable and can be configured to adopt most power circuit topologies common in the power electronics industry.

The disclosed power module significantly improves internal module performance, system level implementation, manufacturability and ease of use through the addition of a tighter power loop and logical external terminal placement.

In this regard, the disclosed power module may be configured to provide at least one or more of the following:

Highly optimized low inductance power module architecture.

Modular, scalable, flexible layout and power flow.

Evenly paralleling many power semiconductors to form high-current switch positions.

Optimized gate and sense signal structures for parallelization of many power semiconductors.

Sensing connector for temperature sensing and overcurrent protection.

Form factor suitable for high voltage operation up to approximately 1700 volts (V) or higher.

Height expandable to exceed 1700V operation.

Multi-layer inner conductor layout for optimized external system interconnection.

Modular internal structure designed to accommodate a variety of advanced materials, attachment, insulation and interconnection technologies.

Heavily optimized for high-performance system-level integration.

Easily paralleled for direct expansion to higher currents.

Can be configured in a variety of power topologies, including half-bridge, full-bridge, three phase, booster, chopper, and other arrangements.

Implementing a scalable system to meet a variety of power processing needs.

In essence, the disclosed power module configuration allows for full exploitation of the capabilities of advanced power semiconductors, which can provide significant improvements in power density, switching, efficiency, etc.

The power devices of the power module have various structures and purposes. The term 'power device' refers to various types of transistors and diodes designed for high voltages and currents. A transistor can be a controllable switch that allows unidirectional or bidirectional current flow (depending on the device type), while a diode can allow current flow in one direction and can be uncontrollable. Transistor types include Metal Oxide Field Effect Transistor (MOSFET), Junction Field Effect Transistor (JFET), Bipolar Junction Transistor (BJT), and Insulated Gate Bipolar Transistor. Transistor, IGBT), etc., but is not limited thereto.

Power devices may include Wide Band Gap (WBG) semiconductors, including gallium nitride (GaN), silicon carbide (SiC), etc., which offer many advantages over traditional silicon (Si) as a material for power devices. provides. Nonetheless, various aspects of the present disclosure can utilize Si type power devices and achieve many of the advantages described herein. WBG Semiconductor's key metrics may include one or more of the following non-limiting aspects:

Higher voltage cutoff.

Higher current density.

Higher temperature operation.

Faster switching.

Improved thermal performance.

Low on-resistance (reduced conduction losses).

Lower turn-on and turn-off energy (reduced switching losses). It should be understood that these previously described key metrics of WBG semiconductors are not required and may not be implemented in some aspects of the present disclosure.

To effectively utilize WBG semiconductor devices, power modules (also referred to as power packages) are used. Power modules may provide multiple functions, including one or more of the following non-limiting aspects:

Provision of electrical interconnection of power semiconductor devices in useful topologies.

Protection of sensitive devices from moisture, vibration, contamination, etc.

Creation of effective and efficient means for the removal of waste heat generated by the device as a result of conduction and switching losses.

Ease of system-level implementation through robust power and signal electrical connections to the internal layout. Power and signal electrical connections may be bolt-on, crimp-on, solder, plug, and receptacle implementations.

Provides voltage safety with internal dielectric encapsulation and external voltage creepage and clearance distances in accordance with industry adopted standards.

It should be understood that such previously described functionality is not required and may not be implemented in some aspects of the present disclosure.

1A schematically illustrates a half-bridge based topology of a power module according to aspects of the present disclosure. Half-bridge-based topologies are the basic building blocks of many switching power converters. For motor drives, inverters and DC-DC converters, this topology is typically connected to a DC power source 112, with a bank of DC link capacitors 102 being the intermediate connection between them. This is shown schematically in Figure 1a. The DC link capacitor 102 may act to filter ripple on the line and counteract the effects of inductance in the current path. Two half bridges in parallel can form a full bridge, while three in parallel can form a three-phase topology. The three-phase topology is often referred to as a six-pack, which refers to the switch positions for six of the three phase legs. Additionally, different topologies are considered for power modules including common source, common drain and neutral point clamp.

1A further illustrates a power module 100 with one or more switch positions 104. The power module 100 may include a first terminal 106, a second terminal 108, and a third terminal 110.

FIG. 1B shows the current loop between a DC link capacitor and a switch position inside the power module of FIG. 1A. The current loop 114 between the DC link capacitor 102 and the switch position 104 within the power module 100 is of critical importance to the system, having a significant impact on the switching performance of the semiconductor.

No system is perfect. For example, undesirable parasitic resistance, capacitance, and inductance exist in all electrical systems. These impedances have detrimental effects on performance and reliability unless they are reduced or mitigated. Although resistance and capacitance can be associated with each interconnection, it may be parasitic inductance that has the greatest impact on switching power devices. High inductance increases the stored energy in the magnetic field, causing voltage overshoot and ringing during switching transitions.

2 illustrates various interconnections and associated impedances according to aspects of the present disclosure. For a power conversion system, such as the half-bridge configuration of power module 100 shown in FIG. 1A, within each component including DC link capacitor 102, bussing system 202, and power module 100, etc. And there is an impedance 204 in the physical interconnection between them. This is shown in Figure 2 for inductance. Impedances associated with more functional elements are often present in power converters, but for switching performance these loops may be the most important.

For most power converters, this inductance must be carefully considered in system design. Often, this requires adding more DC link capacitors 102 or lowering the switching speed to counter parasitic effects. Although effective, it results in a larger system (larger and heavier capacitors) with greater losses (due to slower switching events in the presence of both high currents and voltages).

In power packages intended for Si devices, the typical turn-on and turn-off times of Si IGBTs are inherently slow enough that the inductance encountered in the internal power loop is sufficiently low. However, for very fast switching of wide gap devices such as SiC MOSFETs, the inductance of the existing package can result in voltage overshoot of hundreds of volts.

These problems are further amplified by the need to parallelize many SiC devices together to reach high current levels in the power module 100. Parallelized arrays of power switches and diodes in various combinations (all switches, all diodes, interleaved diodes, edge diodes, etc.) are referred to as 'positions' or 'switch positions'. Each switch in switch position 104 acts together as a single effective switch to increase the amount of current the circuit can handle or lower the effective resistance to reduce overall losses.

3 illustrates various interconnections and associated impedances of switch positions according to aspects of the present disclosure. At switch position 104, each switch or power device 302 has its own individual current path in the structure. Each interconnection has an associated impedance 204 as shown in FIG. 3 . As further shown in FIG. 3 , switch location 104 may include any number of power devices 302 as indicated by the symbols shown in arrow 304 . The active current path is equalized between the power devices 302 so that they each see a matched inductance. Otherwise, the currents and voltages encountered during switching transitions may not be shared equally between power devices 302 across switch positions 104, stressing components unevenly and increasing switching losses. This is exacerbated by thermal effects. Uneven current loading and switching events create uneven heat rise, resulting in drift in semiconductor properties and further instability in paralleled switch positions 104.

Existing power packages are typically designed for a single Si IGBT or a small array (usually four or fewer) of these devices. As a result, they are not suitable for paralleling large numbers of SiC MOSFETs and diodes (or similar wideband gap devices) in a way that provides clean, well-controlled switching.

The disclosed power module 100 provides a solution for power device 302, such as a wideband gap device, which may include one or more of the following non-limiting aspects:

Reduction of internal inductance of power module 100.

Facilitating an equalized current path between paralleled power devices 302 at switch location 104.

Equal heat sharing between power devices 302 across switch locations 104.

Having an external structure that allows for low inductance interconnection with the DC link capacitor (102).

Possibility of safe carrying of high currents (hundreds of amperes) at high voltages (≥1700 V).

It should be understood that these previously described features of power module 100 are not required and may not be implemented in some aspects of the present disclosure.

FIG. 4A shows a schematic perspective view of a power module according to aspects of the present disclosure, and FIG. 4B shows a schematic top view of a power module according to aspects of the present disclosure. In particular, a half-bridge configuration of power module 100 is shown in FIGS. 4A and 4B. The disclosed power module 100 overcomes each of the previously enumerated issues associated with a power layout and associated structure custom designed to facilitate the most common bridge topology where each switch position 104 has an equalized, low inductance current path. Deal with it. Terminals 106, 108, 110 may be arranged so that the path to the external filtering DC link capacitor 102 has a correspondingly low inductance, without requiring bending or special design features, as described in more detail below. It has uncomplicated laminated buss bars.

The power terminal pinout of a single half-bridge configuration of power module 100 is shown in Figure 4A. The V+ terminal 106 and V- terminal 108 may be intentionally placed close together (with sufficient space for voltage clearance) to physically minimize external current loops to the DC link capacitor 102. there is.

Power module 100 may include signal terminals 502, 504, 506, and 508. The specific pinouts of signal terminals 502, 504, 506, and 508 may be modular and modified as needed. The configuration is shown in Figure 4A. As shown, there are four pairs of signal pins for signal terminals 502, 504, 506, and 508 for differential signal transmission. Of course, any number of signal pins and any number of signal terminals may be implemented to provide functionality as described in connection with this disclosure. Each switch position 104 can utilize a pair of pins with terminals 502 and 504 for a gate signal and a source Kelvin for optimal control. Other pin pairs of signal terminals 506, 508 may be used for internal temperature sensors, overcurrent detection, or other diagnostic signals. It is contemplated that more pins and/or more signal terminals may be added to any row as needed, as long as they do not cause voltage isolation issues. In some aspects, other diagnostic signals may be generated from diagnostic sensors, which may include strain gauges that detect vibration, etc. The diagnostic sensor can also determine humidity. Additionally, diagnostic sensors can detect any environmental or device characteristic.

5 illustrates a plurality of single phase modules in a paralleled configuration according to aspects of the present disclosure. Modularity is the basis of the disclosed power module 100. The single phase configuration of power module 100 can be easily paralleled to reach higher currents. As shown in Figure 5, three power modules 100 are shown, but there is no limit to the number that can be configured in this manner. In this regard, arrows 510 indicate that additional power modules 100 may be arranged in parallel. When paralleled, each of the corresponding terminals 106, 108, and 110 may be electrically connected between each power module 100.

FIG. 6A illustrates a first power module configuration according to aspects of the present disclosure, and FIG. 6B illustrates a second power module configuration according to aspects of the present disclosure. Scalability of the disclosed power module 100 may be another defining feature. This is shown in Figures 6a and 6a. As shown in FIG. 6B, the power module 100 width can be expanded to accommodate more paralleled devices for each switch position 104 compared to the power module 100 shown in FIG. 6A. Due to the increased current in power module 100, additional fastener holes 512 may be added to the power contacts of terminals 106, 108, and 110. Power modules 100 can be paralleled as shown in FIG. 5 or configured to match most power levels without sacrificing the advantages of the present disclosure, including, for example, low inductance, accurate switching, high power density, etc. It is important to note that it can be expanded as shown in Figure 6b.

Figure 7 shows a power module in a full bridge configuration according to an aspect of the present disclosure, Figure 8 shows a power module in a three-phase configuration according to an aspect of the present disclosure, and Figure 9 shows a full bridge configuration according to an aspect of the present disclosure. It shows a single power module with . In some aspects, modularity can also be found in the formation of various electrical topologies, such as Figure 7 for a full bridge configuration of two power modules 100 and Figure 8 for a three-phase configuration of three power modules 100. . For this topology, V+ terminal 106 and V- terminal 108 may be interconnected while phase output terminal 110 may remain isolated. The configurations of FIGS. 7 and 8 can be placed in a single housing or constructed with a shared base plate as illustrated in FIG. 9 , which can increase power density with a trade-off of higher unit complexity and cost.

Although various arrangements, configurations and extended width versions of power module 100 cover a range of applications and power levels, the core internal components and layout may remain the same. This enhances the modular nature of the disclosed power module 100. This architecture includes a family of modules that are easy to use and demonstrate a high level of performance while growing with a variety of customer-specific systems.

FIG. 10 shows an exploded view of a power module according to aspects of the present disclosure, and FIG. 11 shows a partial view of the power module of FIG. 10. In particular, Figure 10 illustrates numerous elements of power module 100. These elements include a base plate 602, a gasket 604, one or more power substrates 606, one or more edge power contacts 608, one or more switch locations 104, one or more temperature sensors 610, and housing sidewalls ( 612), central power contact 614, signal interconnect assembly 616, housing cover 618, fastener 620, captive fastener 622, etc. In one aspect, base plate 602 may include metal. In one aspect, the metal may include copper. Moreover, it is contemplated that power module 100 may include fewer or different elements than described herein.

Power module 100 may include a base plate 602. Base plate 602 may provide structural support for power module 100 as well as promote heat dissipation for thermal management of power module 100. Base plate 602 may be a base metal such as copper, aluminum, etc., or a metal matrix composite (MMC) that can provide coefficient of thermal expansion (CTE) matching to reduce thermally generated stresses. may include. In one aspect, the MMC material may be a composite of a highly conductive metal such as copper, aluminum, etc. with a low CTE metal such as molybdenum, beryllium, tungsten, and/or a non-metal such as diamond, silicon carbide, beryllium oxide, graphite, embedded pyrolytic graphite, etc. there is. Depending on the material, the base plate 602 may be formed by machining, casting, stamping, etc. The base plate 602 may have metal plating such as nickel, silver, gold, etc. to protect the surface of the base plate 602 and improve soldering ability. In one aspect, base plate 602 may have a flat rear surface. In one aspect, base plate 602 may have a convex profile to improve planarity after reflow. In one aspect, base plate 602 may have pin fins 642 for direct cooling, as discussed further below with reference to FIGS. 43-59.

Power module 100 may include gasket 604. Gasket 604 can improve the encapsulation process by providing a liquid-tight seal. In this regard, power module 100 may include a dielectric encapsulation therein. Gasket 604 may be injection molded, dispensed, etc., applied to grooves in housing side wall 612 and compressed between housing side wall 612 and base plate 602.

Power module 100 may include one or more power substrates 606. One or more power substrates 606 may provide electrical interconnection, voltage isolation, heat transfer, etc. for the power device 302. One or more power substrates 606 may be composed of direct bond copper (DBC), active metal braze (AMB), insulated metal substrate (IMS), etc. For an IMS structure, one or more power substrates 606 and base plate 602 may be integrated into the same element. In some aspects, one or more power boards 606 may be attached to base plate 602 with solder, thermally conductive epoxy, silver sintering, etc. In one aspect, there may be two power boards 606, one for each switch position 104.

Power module 100 may include one or more edge power contacts 608. A surface of one of the one or more edge power contacts 608 may form the V+ terminal or the first terminal 106. A surface of one of the one or more edge power contacts 608 may form a phase terminal or third terminal 110 . One or more edge power contacts 608 may create a high current path between an external system and one or more power substrates 606. One or more edge power contacts 608 may be fabricated from sheet metal through an etching process, stamping operation, etc. One or more edge power contacts 608 may have partial thickness bending assistance lines 624 to facilitate bending of one or more edge power contacts 608 to aid final assembly. In one aspect, one or more edge power contacts 608 can be folded over the captive fastener 622. In one aspect, one or more edge power contacts 608 may be soldered directly to the power board 606, ultrasonically welded, etc. One or more edge power contacts 608 may have a metal plating such as nickel, silver, gold, etc. to protect the surface and improve solderability.

In one aspect, the base 636 of the edge power contact 608 can be divided into feet to aid the attachment process. Base 636 may have a metal plating such as nickel, silver, and/or gold to protect the surface and improve solderability.

Power module 100 may further include one or more switch positions 104. One or more switch locations 104 may include a power device 302 that may include any combination of controllable switches and diodes placed in parallel to meet requirements for current, voltage, and efficiency. Power device 302 may be attached with solder, conductive epoxy, silver sintered material, etc. The top pads on the power device 302 including the gate and source may be wire bonded at each location with power wire bonds 628. Power wire bond 628 may include ultrasonically weldable aluminum, aluminum alloy, copper, etc. wire, or similar in both feet forming a conductive arch between two metal pads. Signal bond 626 may be formed in a similar manner and may be aluminum, gold, copper, etc. In some aspects, the diameter of the wires of the power wire bond at 626 may be smaller than the wires of the power wire bond 628.

The power module 100 may further include one or more temperature sensors 610. One or more temperature sensors 610 may be implemented as resistive temperature sensor elements directly attached to the power substrate 606.

Other types of temperature sensors are also considered, including resistance temperature detector (RDT) type sensors, Negative Temperature Coefficient (NTC) type sensors, optical type sensors, thermistors, thermocouples, etc. One or more temperature sensors 610 may be attached with solder, conductive epoxy, silver sintered material, etc., and then wire bonded to signal interconnect assembly 616. The power module 100 may further include one or more diagnostic sensors, which may include a strain gauge that detects vibration. The diagnostic sensor can also determine humidity. Additionally, diagnostic sensors can detect any environmental or device characteristic.

Power module 100 may further include a housing sidewall 612. Housing sidewall 612 may be formed of a synthetic material. In one aspect, housing sidewall 612 may be an injection molded plastic element. Housing sidewalls 612 may provide cavities to maintain electrical insulation, voltage creepage distance and clearance, structural support, and voltage and moisture barrier encapsulation. In one aspect, housing sidewall 612 may be formed by an injection molding process from reinforced high temperature plastic.

Power module 100 may further include a central power contact 614. The surface of central contact 614 may form a V- terminal or a second terminal 108. Central power contact 614 may create a high current path between external systems and power device 302. Central power contact 614 may be manufactured from sheet metal through an etching process, stamping operation, etc. The central power contact 614 may be isolated from the underlying power board 606 by being embedded in the housing sidewall 612 (as shown), or may be soldered or welded to a secondary power board as described below. You can. Central power contact 614 may include one or more holes 632 as shown in FIG. 11 to receive corresponding fasteners 634 that secure central power contact 614 to housing sidewall 612. .

The low side switch position power device 302 may be wire bonded 640 directly from the terminal to the center power contact 614 as shown in FIG. 11 . The central power contact 614 may have a partial thickness bending assistance line 624 to assist with folding during final assembly. The central power contact 614 may have a metal plating such as nickel, silver, gold, etc. to protect the surface and improve bonding capabilities.

Power module 100 may further include a signal interconnect assembly 616. The signal interconnect assembly may be a gate-source board. Signal interconnect assembly 616 may be a small signal circuit board that facilitates electrical connections from signal contacts to power device 302. Signal interconnect assembly 616 may allow gate and source Kelvin connections as well as connections to additional nodes or internal sensing elements. Signal interconnect assembly 616 may allow for individual gate resistance for each power device 302. Signal interconnect assembly 616 may be a printed circuit board, ceramic circuit board, flex circuit board, embedded metal strip, etc. arranged on housing sidewall 612. In one aspect, signal interconnect assembly 616 may include multiple assemblies. In one aspect, signal interconnect assembly 616 may include multiple assemblies, one for each switch position 104.

Power module 100 may further include a housing cover 618. Housing cover 618 may be a composite element. In one aspect, housing lid 618 may be an injection molded plastic element. Housing cover 618 may provide electrical insulation, voltage creepage distance and clearance, and structural support. In this regard, housing lid 618 may form a closed assembly with housing sidewall 612. The closed assembly can prevent foreign substances from entering the interior of the power module 100. In one aspect, housing lid 618 may be formed in an injection molding process from reinforced high temperature plastic.

The power module 100 may further include a fastener 620. Fastener 620 may be a threaded screw. Other types of fasteners are also considered. Fasteners 620 may be used to secure multiple elements of power module 100 by screwing directly into housing sidewall 612. Fasteners 620 (if not incorporated through other means) may be used to secure housing sidewalls 612 to base plate 602, etc., for attaching housing lid 618, attaching signal interconnect assembly 616, central power It can be used to embed the contact 614.

Power module 100 may further include a captive fastener 622. Captive fasteners 622 may be hex nuts disposed on housing sidewall 612 and housing lid 618 and may remain captive under edge power contact 608 and center power contact 614 after they are folded. there is. Other types of fasteners or connectors are contemplated to implement captive fastener 622. Captive fasteners 622 may facilitate electrical connections to external bus bars or cables. The captive fasteners 622 may be arranged such that when the power module 100 is bolted to the bus bar, the captive fasteners 622 and edge power contacts 608 are pulled upward into the bussing to form a better quality electrical connection. You can. When captive fasteners 622 are attached to the housing, the rigidity of the bus bars may act to pull the bussing down into the power module 100 which may form a poor connection.

In one aspect, the housing cover 618 may include a hole shaped to match the external shape of the captive fastener 622 to prevent the captive fastener 622 from rotating. A corresponding fastener (shown in FIG. 26) may be received by captive fastener 622. Corresponding fasteners extend through fastener holes 512 in central power contact 614 to facilitate electrical connections to external bus bars or cables.

In one aspect, the housing side wall 612 may include a hole whose shape matches the external shape of the captive fastener 622 to prevent the captive fastener 622 from rotating. A corresponding fastener (shown in FIG. 26) may be received by captive fastener 622. Corresponding fasteners extend through fastener holes 512 of one or more edge power contacts 608 to facilitate electrical connections to external bus bars or cables.

To achieve low internal inductance, the current paths of power module 100 are wide, short, and may overlap whenever possible to achieve flux rejection. Flux cancellation occurs when the current traveling through the loop is so close that it moves in the opposite direction, effectively counteracting the associated magnetic field. The main advantage of this modular approach is that the entire width of the footprint is utilized for conduction. Module height can be minimized to reduce the length the current must travel through the structure.

The power loop for the half bridge phase leg is shown in Figure 11, with edge power contact 608 and center power contact 614 collapsed to show detail. The wide, low profile edge power contact 608 and center power contact 614 bring current directly to the power device 302. The active current path from the terminal surface to the individual power device 302 may be functionally identical. Additionally, the power devices 302 can be placed in close proximity to minimize relative loop inductance imbalance and ensure good thermal coupling.

FIG. 12A shows a top view of a phase leg of a power module constructed according to the present disclosure, with each node identified in a half-bridge topology, and FIG. 12B illustrates a top view of a phase leg of a power module configured according to the present disclosure, with each node identified in a half-bridge topology according to FIG. 12A A schematic diagram of the phase leg of the power module configured according to is shown. Power module 100 may include one or more diodes. In one aspect, the diodes in the schematic may be discrete diodes placed in anti-parallel (not shown). In one aspect, the diode in the schematic may be a representation of the body diode of power device 302 implemented as a MOSFET (as shown).

In one aspect, the current path may originate at the V+ node terminal 608, which may be attached to the drain D1 of the power substrate 630 and the upper one of the power devices 302. The source (S1) of the upper device of the power device (302) can then be wire bonded (628) to the low-power substrate pad (630), which provides the phase power as well as the drain (D2) of the lower side power device (302). It is attached to terminal 608. Finally, there may be wire bonded 628 to the source (S2) V-power contact terminal 614 of the low side power device 302, which may be above the lower power substrate 630 providing some overlap. It can be sufficiently voltage insulated from the power board 630.

Figure 13 shows a cross-sectional view of the phase leg of Figures 12a and 12b, and Figure 14 shows a cross-sectional view of the phase leg of Figures 12a and 12b including the current path. As shown in Figure 13, the tabs of the power contacts or terminals 106, 108, and 110 are folded as is in the final configuration of the power module 100 structure. Layer thicknesses have been exaggerated to show detail. All elements in these diagrams can be considered conductors when visualizing current flow.

13 further illustrates a stepped, multi-height or multi-elevation configuration of power module 100. In this regard, the vertical position of terminal 614 is shown higher than the vertical position of terminal 608. The height difference is indicated by arrow 702. This multi-height configuration can provide a critical loop, discussed in more detail below. Moreover, multi-height configurations can help provide bus connections, which are also discussed further below.

Figure 14 shows an overlay of the current path from the V+ terminal to the V- terminal, illustrating a critical loop for accurate switching according to aspects of the present disclosure. Inductance is proportional to the path length, decreases as the cross-sectional area of the conductor increases, and decreases with the removal of magnetic field flux. The identified path begins at terminal 608 and flows through power substrate 630, across power device 302, through power device 302 to second substrate 630 and output by terminal 614. The identified path is low inductance due to the following factors:

Low height of the module.

Proximity of power device 302 to terminals 608, 614.

Solid packing of all functional elements.

Large cross-sectional area of the conductor.

Parallelized wire bonds (628) optimized for each power device (302).

Even current sharing between power devices 302.

Eliminates flux when the current direction is reversed in the low side switch position.

Remove flux from external V+/V- bus bars.

15 shows a contact surface of a power module with busing according to aspects of the present disclosure. The contact surfaces of V+ terminal 608 and phase terminal 608 may be planar, while the top of V- terminal 614 is offset from the others. This feature allows the external V+/V- stacked busings 802, 804 to contact the two terminals 608, 614 without requiring bending of the stacked busings 802, 804, as shown in Figure 15. Offset distance 702 (shown in FIG. 13) can be adjusted to match the thickness of the bus bar metal and associated dielectric insulation film.

The low internal module inductance combined with the minimized external inductance of busing 802, 804, 806 to the DC link capacitor 102 bank provides the power module 100 for accurate and fast switching events with low voltage overshoot and stable performance. This results in an optimized structure of

Together, these advantages allow for lower switching losses, higher switching frequencies, improved controllability and reduced EMI. Ultimately, this helps system designers achieve more power-dense and robust power conversion systems.

16A, 16B, and 16C illustrate various aspects of terminals of a power module according to aspects of the present disclosure. A multi-layer layout with V-terminal 614 in the middle of power module 100 may be essential for this design. Adequate voltage isolation of these terminals 614, which lie directly on the output traces on the power board 630, can be achieved through a variety of configurations forming the insulating structure. This power module 100 design is compatible with each of the following:

Figure 16A shows one side of the isolation of V- terminal 614. In this respect, power module 100 may include an embedded insulator 810 of V- terminal 614. Embedded insulator 810 may be formed of plastic or other synthetic material. The embedded insulator 810 may be positioned on the housing side wall 612 as a strip 810 connecting the central regions. In one aspect, strip 810 may be formed of plastic. Power contacts 614 can be embedded in strip 810 through a number of methods, including mechanical fastening such as thread forming screws, direct integration such as a plastic over molding process, or riveting in place with a plastic thermal lamination operation. .

Figure 16b shows another aspect of the isolation of V- terminal 614. In this respect, the power module 100 may form an insulation of the V- terminal 614 by power substrate insulation. In this regard, secondary power substrate 812 may be used to provide insulation through a layer of dielectric material, such as ceramic. This secondary power substrate 812 may be soldered, sintered, or epoxidized to the power substrate 630, while the power contact 614 may be soldered or welded to an upper metal pad on the secondary substrate. The advantage of this approach is improved heat transfer of the central power contact 614 because the secondary power substrate 812 will be highly conductive and facilitate heat removal from the power contact 614 to a cold plate or heat sink. .

Figure 16C shows another aspect of the isolation of V- terminal 614. In this regard, a thick film insulator 814 may be used. Thick film insulation 814 may utilize a thick film dielectric printed directly on power substrate 630 and may provide voltage blocking. The center contact 614 may be attached to the thick film insulator 814 via epoxy or soldered directly to a thin layer of metal thick film printed on top of a dielectric film or the like.

In another aspect, the insulation of V- terminal 614 may include suspension insulation (not shown). In this aspect, the central power contact 614 may be suspended a sufficient distance above the power substrate 630 and attached to the housing sidewall 612 in a manner similar to an embedded approach. In this regard, the gel encapsulation filling the power module 100 may provide dielectric insulation. However, the center contact 614 may need to use a high stiffness material so as not to interfere with the formation of the power wire bond 628 between the lower side device and the contact.

17 schematically depicts a plurality of devices in parallel according to aspects of the present disclosure. In particular, Figure 17 shows three power devices 302. This is illustrative only and is intended for ease of illustration and understanding. Power module 100 of the present disclosure may include any number of power devices 302.

Gate control and sense signals significantly affect the switching performance of power module 100 and can be particularly important at paralleled switch positions 104. The signal loop can be optimized in power module 100 for high performance, robustness, and uniform current sharing. Similar to the power loop, the path can be configured to be of limited length and large cross-sectional area, and the associated external components can be placed as physically close to the signal terminals 502 and 504 as possible.

For paralleled arrays of power devices 302 such as transistors, especially MOSFETs, the timing and magnitude of the gate currents must be balanced to result in consistent turn-on and turn-off conditions. Power module 100 may utilize individual ballasting resistors (R _G1 , R _G2 , R _G3 ) that may be placed in close proximity to the gate of power device 302 separated only by gate wire bonds. These components have low resistance and help buffer the current flowing to each individual power device 302. These components serve to isolate the gate of the power device 302 to prevent oscillation and help ensure a balanced turn-on signal to the paralleled power device 302. A single external resistor (R _DRIVER ) may be used connected to these paralleled resistors (R _G1 , R _G2 , R _G3 ) to control the turn-on rate of the effective switch position 104.

Gate resistors (R _G1 , R _G2 , R _G3 ) can be surface mount packages, integrated thick films, printed thick films, wire bondable chips, etc., depending on the application.

FIG. 18 shows a perspective view of an effective gate switching loop according to aspects of the present disclosure, and FIG. 19 shows a top view of an effective gate switching loop according to aspects of the present disclosure. The signal board or signal interconnect assembly 616 may have rails 816 and 818 connected to gate and source Kelvin connector terminals 502 and 504 on the board edge of the signal interconnect assembly 616. The top rail 818 can be connected to a gate wire bond pad through a separate gate resistor 820, while the bottom rail 816 can be wire bonded directly to the source pad of the power device 302. This can be considered a true Kelvin connection because the source Kelvin bond is not in the current path of the power source bond. The Kelvin connection can be important for accurate and efficient control, reducing the impact of high drain-to-source current on the signal loop.

18 and 19 further illustrate optional signal connections 506 and 508 to the left side of signal interconnect assembly 616. These connections can be used for temperature measurements or other forms of internal sensing. In some aspects, internal sensing may include diagnostic sensing, including diagnostic signals that may be generated from diagnostic sensors, which may include strain gauges that detect vibration, sensors that detect humidity, and the like. Additionally, diagnostic sensors can detect any environmental or device characteristic. In one aspect, temperature sensor 610 may be placed in a low lateral position. Of course, other locations and arrangements for temperature sensor 610 are also contemplated. In one aspect, a wire bond may be placed on the top pad next to the drain trace (e.g., next to the power device 302) for overcurrent measurements (also referred to as desaturation protection for IGBTs). Of course, other positions and arrangements for overcurrent measurement are also considered. In some aspects, an overcurrent sensor or desaturation sensor may sense a voltage drop as determined by a connection to the drain of power device 302. In some aspects, current may also be sensed by a voltage drop across power device 302.

This implementation of a signal loop or signal interconnect assembly 616 can ensure quality control and measurements across any combination of power devices 302 paralleled at switch positions 104. Standard PCB board-to-board connectors can allow direct connection to external gate drivers and control circuitry.

As shown, this gate distribution network can be implemented in a PCB. It can also be formed as a thick film circuit directly on the primary power substrate 630 and directly on the base plate 602. This has the advantage of reducing the component count of the power module 100 and the option to print the gate resistor 820. Gate resistor 820 can be much smaller than the size of a surface mount component on a PCB, as there is no need for solder terminals and gate resistor 820 can be actively cooled from a cold plate, minimizing thermal size constraints on the component.

20 illustrates a partial example implementation including a power module according to aspects of the present disclosure. In this regard, Figure 20 is a representative example structure implementing the power module 100 of the present disclosure as a high-performance system. This general approach applies to many different configurations and topologies that serve as useful examples of how to utilize power module 100 in a converter. This specific example is for a three-phase motor drive. In this aspect, there are three power modules 100.

The disclosed power module 100 may be comprised of an array (three as shown) of half bridge phase legs. Additional power modules 100 may be included in parallel to increase current as required for the application.

The implementation of Figure 20 may further include a cold plate 902. The cooling plate 902 may be a high-performance liquid cooling plate, a heat sink, etc. that serve to transfer waste heat from the power module 100 to another source (liquid, gas, etc.).

The implementation of FIG. 20 may further include a DC link capacitor 102. DC link capacitor 102 may be implemented as a filtering capacitor interfacing the power module 100 with a source of DC power. In one aspect, DC link capacitor 102 may be implemented as a single capacitor. In another aspect, DC link capacitor 102 may be implemented as multiple components forming a 'bank' of capacitors depending on the load and/or power demands of the particular application.

The implementation of FIG. 20 may further include a cold plate standoff 904. Cold plate standoffs 904 may provide structural support to cold plate 902. Cold plate standoffs 904 may be configured as shown and may elevate and position power module 100 terminals 106, 108 flush with capacitor contacts 906. In this respect, flat bus bars without bends can interconnect components. For higher power densities or for different types of capacitors, the height of the cold plate standoffs 904 can be adjusted to best utilize the form factor available for the elements of the converter. This may have a corresponding trade-off of increasing the electrical loop length as transition bends may be required, and will vary depending on system specific requirements.

Figure 21 shows an exemplary stacked bus bar according to the present disclosure, Figure 22 shows a portion of an example stacked bus bar according to Figure 21, and Figure 23 shows another example stacked bus bar according to Figure 21. Show the part. The power terminal layout can be designed to facilitate simple and effective bus bar interconnection. To minimize the inductance between the DC link capacitor 102 and the terminals 106, 108 of the power module 100, the bus bar 900 may have thick conductors 910, 912 and Thick conductors 910, 912 may overlap. Thick conductors 910, 912 may be separated by a thin dielectric film 914. Current travels in opposite directions through each sheet of thick conductor 910, 912, which acts to greatly reduce the effective inductance between power device 302 and filtering DC link capacitor 102. The top layer of thick conductor 910 can be embossed to form a coplanar contact 918 at the mating surface to the DC link capacitor 102, eliminating the need for washers or spacers that can interfere with electrical performance.

An example stacked bus bar 900 matching the system level layout presented above may include one or more of a conductor V+ plane 912, a conductor V- plane 910, and a dielectric film 914.

Conductor V+ plane 912 can connect the V+ terminal 106 of power module 100 via contact 926 to the V+ terminal of DC link capacitor(s) 102 via contact 928 as well as external It may have a terminal 920 for connection.

Conductor V-plane 910 may connect the V- terminal 108 of power module 100 via contact 924 to the V- terminal of DC link capacitor(s) 102 via contact 918. In addition, it may have a terminal for external connection (922). Contacts 918, 924, 926, 928 and terminals 920, 922 may each be implemented as a fastener hole configured to receive a fastener to form an electrical connection. Other electrical connection implementations are also considered. Conductors 910 and 912 may include holes 940 . A hole 940 in one of the conductors 910, 912 allows access to a contact in the other one of the conductors 910, 912.

Dielectric film 914 may be implemented as a thin electrical insulator disposed between overlapping metal layers of conductors 910 and 912. Dielectric film 914 can provide dielectric insulation in accordance with electrical safety standards. Dielectric film 914 may be kept as thin as possible to minimize inductance. The film can also cover the top and bottom of the stacked bus bars 900 in all areas that do not require electrical connections. Edges 916 of stacked bus bars 900 may be sealed through a variety of methods including pinch seal lamination, epoxy seal, dielectric insert, etc. depending on geometry and available space. In some aspects, the dielectric film 914 material may be adhered to the laminated bus bar 900 with an acrylic adhesive. In some aspects, laminated bus bar 900 may include a pinch seal with a polymer material. In some aspects, the laminated bus bars 900 may subsequently be subjected to pressure, heat and time to form the lamination.

In some aspects, bus bar 900 and conductors 910, 912 have a generally planar configuration. More specifically, bus bar 900 may have a generally flat upper surface and a generally flat lower surface as shown in FIG. 15 . In some aspects, the thickness of one of the conductors 910, 912 along with the dielectric film 914 defines the offset distance 702 shown in FIG. 13. In one aspect, the thickness of one of the conductors 910, 912 along with the dielectric film 914 may be between 0.5 mm and 10 mm, corresponding to the offset distance 702. In one aspect, the thickness of one of the conductors 910, 912 along with the dielectric film 914 may be between 1 mm and 2 mm, corresponding to the offset distance 702. In one aspect, the thickness of one of the conductors 910, 912 along with the dielectric film 914 may be between 0.5 mm and 1 mm, corresponding to the offset distance 702. In one aspect, the thickness of one of the conductors 910, 912 along with the dielectric film 914 may be between 2 mm and 3 mm, corresponding to the offset distance 702. In one aspect, the thickness of one of the conductors 910, 912 along with the dielectric film 914 may be between 3 mm and 4 mm, corresponding to the offset distance 702. In one aspect, the thickness of one of the conductors 910, 912 along with the dielectric film 914 may be between 4 mm and 5 mm, corresponding to the offset distance 702. In one aspect, the thickness of one of the conductors 910, 912 along with the dielectric film 914 may be between 5 mm and 6 mm, corresponding to the offset distance 702. In one aspect, the thickness of one of the conductors 910, 912 along with the dielectric film 914 may be between 6 mm and 7 mm, corresponding to the offset distance 702. In one aspect, the thickness of one of the conductors 910, 912 along with the dielectric film 914 may be between 7 mm and 8 mm, corresponding to the offset distance 702. In one aspect, the thickness of one of the conductors 910, 912 along with the dielectric film 914 may be between 8 mm and 9 mm, corresponding to the offset distance 702. In one aspect, the thickness of one of the conductors 910, 912 along with the dielectric film 914 may be between 9 mm and 10 mm, corresponding to the offset distance 702.

24 shows a phase output bus bar according to the present disclosure. For a three-phase motor drive, as in this example, the phase outputs 930 may not require stacking or overlap to minimize inductance. This is because the phase output bus bar 930 drives an inductive load, which limits the need to reduce inductance on the output path. Accordingly, phase output bus bar 930 may be a stand-alone element and may be much less complex than a stacked DC link structure. Phase output bus bar 930 may include holes 934 to receive fasteners to form electrical connections.

It is highly desirable to measure the output current in each phase. This involves adding a low-resistance series resistor (called a shunt) to measure the voltage drop across the resistor, and including a sensor that measures the magnetic field produced by the current and provides a proportional signal to the controller. This can be done through a method. Figure 24 shows a configuration for improving measurement accuracy by adding a ferrous shield 932 to focus the magnetic field on one of the output bus bars 930 for this system as well as an area where the sensor may be located. It shows.

The phase output bus bar 930 or conductor may be configured to provide transition from the phase output terminal 110 of each power module 100 to an external terminal connection. The shape and arrangement of the phase output bus bars 930 or conductors may vary and may depend on the particular topology or arrangement of the power module 100.

The iron shield 932 or magnetic field concentrator may be configured to focus the magnetic field generated by the current flow at a target area where the sensor may be placed. Although this may not be necessary for operation, it is a very advantageous arrangement for extracting output current measurements from most transducer systems.

FIG. 25 shows a perspective view of an example implementation including a power module and a stacked bus bar according to aspects of the present disclosure, and FIG. 26 is a first cross-sectional view of an example implementation including a power module and a stacked bus bar according to FIG. 25 27 shows a second cross-sectional view of an example implementation comprising a power module according to FIG. 25 and a stacked bus bar. 25-27 show a motor drive system layout with the stacked bus bar 900 structure described above. 25-27, the system includes an array of power modules 100, a cold plate 902 assembly, a DC link capacitor 102, a DC link stacked bus bar 900 assembly, and an output contact bus bar 930. ) may include.

A cross section of the terminals of the DC link capacitor is shown in Figure 26. Figure 26 shows the embossed coplanar connections 918 that characterize the bus bar 900 as well as the high degree of metal stacking in all feasible positions. The only separation between plates 910, 912 may be the minimum area required for the sheet metal manufacturing process (embossing tools, work fixtures, tolerances, etc.) and dielectric insulator 914 (edge seals, creepage distances, clearances).

The cross-section of power module 100 shown in FIG. 27 shows an optimized overlapping threshold loop from the bank of DC link capacitors 102 to terminals 106 and 108 of power module 100. This reinforces the concepts discussed in Figure 15 with real-world representative components and physical design constraints.

Overall, this low inductance, high current interconnect structure is required and enabled by the disclosed power module design. At the same time, they form an effective, highly integrated, low inductance path between the bank of DC link capacitors 102 and the switch location 104. This structure allows for efficient, stable and very high frequency switching of power devices 302 such as wideband gap semiconductors.

28 shows an example single module gate driver according to the present disclosure. The gate driver acts as a power amplifier to deliver drive current to the switch position 104 while providing voltage isolation between the controller and the high voltage power stage. Isolation can also be maintained between driver blocks between switch positions 104. For high frequency switching, the output stage of the driver may be located physically close to the switch position 104.

Additional features may be included for safety, such as undervoltage, overvoltage, and overcurrent protection. The gate driver circuit may be configured to ensure that the power module 100 always functions in a safe operating region and is gracefully shut down in the event of a failure.

With this power module design, the gate driver can be seated directly on top of the stacked power bussing 900. These can be formed from a single PCB and can be racked up or expanded in the same modular manner as the power module 100. Alternatively, drivers can also be integrated onto a single PCB across an array of power modules 100, reducing size but increasing complexity due to multiple high voltage nodes on the board. The driver's output can be located right next to the board-to-board connector where it contacts the module signal pins.

An example of a single module gate driver 400 is shown in Figure 28. A single module gate driver 400 element may be duplicated for each switch position 104. The arrangement and specific layout of each block may be system dependent and may be plotted in these figures as generalized examples.

Single module gate driver 400 elements include control signal connector 410, isolated power supply 420, signal isolation and conditioning components 430, amplifier stage 440, bulk gate resistor, and local current filter 450. , sensor and protection component 460, power module signal connector 470, and creepage distance expansion slot 480. A single module gate driver 400 may be arranged on a printed circuit board (PCB 402).

Control signal connector 410 may be configured to interface a controller and a gate driver such that differential control and sensor signals can be transferred between the two via a cable, board-to-board connector, or similar mechanism.

Isolated power supply 420 may be implemented as a DC-DC converter that provides the positive and negative voltages necessary to turn on and off power device 302. Isolated power supply 420 may be of sufficiently high power to power the current required by power device 302. Isolation between the control stage and the power stage can be an important feature of these blocks.

Signal isolation and conditioning component 430 may include circuitry to condition control signals to the driver's amplifier stage 440 as well as provide isolation of control signals between low-voltage control and high-voltage power.

Amplifier stage 440 may be formed as separate or integrated components. Amplifier stage 440 may convert the isolated low power control signal to the current and voltage required for switch position 104 to operate. This should be as physically close to the module signal terminals as possible for accurate switching.

Bulk gate resistor and local current filter 450 may be the final step before transitioning to the output pin, bulk gate resistor and local current filter 450, which turns the switch position 104 on and off to suit the needs of the particular system. Can be used to adjust the number of times. These can be a single set of passive elements, or part of a network with different resistance values for turn-on and turn-off if different switching characteristics are required. Local filters can also be used to ensure that a quality source of current is maintained during switching events.

Sensor and protection components 460 may include circuitry that may include mechanisms for under- and over-voltage protection, over-current protection, temperature sensing, and safe shutdown in the event of a fault.

Power module signal connector 470 may be located on the bottom surface of PCB 402. Power module signal connector 470 may interface gate drivers and power module 100 to provide a direct connection to a gate distribution network within power module 100. This can usually be facilitated by board-to-board connectors, direct solder connections, etc. A wire-to-board connection is also possible, but requires the driver to be physically close to the power module 100.

Creepage distance expansion slots 480 can be configured to improve voltage isolation between driver stages and allow for more compact packing of components. As high-voltage power modules continue to shrink in size, voltage isolation becomes increasingly difficult. Cutting slots in PCB 402 may be one option to increase voltage creepage distance without adding board size. Other options include local potting of critical nodes and completely covering the entire assembly with a conformal dielectric coating. More specifically, the various components of power module 100 including PCB 402 may include discrete and/or local porting of one or more components, and the power module 100 including PCB 402 The various components of include conformal dielectric coatings on one or more components, the entire PCB 402, and/or other assemblies of the power module 100.

When integrated together as shown in FIG. 29, gate driver 400 and power module 100 provide isolation, amplification and then distribution through a gate resistor network directly to the gate of the parallelized power device 302. , forming a compact single unit with optimized low-inductance signal flow from the control source.

Figure 30 shows a current sensing component according to an aspect of the present disclosure, and Figure 31 shows a current sensing component arranged with a phase output bus bar according to Figure 30. There are several ways to sense current. In one aspect of the present disclosure shown in FIGS. 30 and 31, a sensor 980, such as a non-contact magnetic sensor, may be used. Sensor 980 may be used with an iron shield 932 to focus the magnetic field. Sensor 980 may use a small sensor chip placed in this area that generates a signal proportional to the output current. An example of sensors on a single PCB 936 for all three phases is shown in Figure 30, and the complete output bus bar structure with magnetic shielding is shown in Figure 31.

32 illustrates an exemplary three-phase motor drive power stack-up according to aspects of the present disclosure. In particular, Figure 32 shows an exemplary three-phase motor drive power stackup with all the functional components previously described. The Figure 32 system is highly integrated and highly optimized for maximum electrical performance. Additional features such as voltage sensing and EMI shielding enclosure of the capacitor banks are considered and well integrated into these high-performance cores.

33 schematically depicts multiple power devices in parallel according to aspects of the present disclosure. In particular, Figure 33 shows four power devices 302. This number of power devices 302 is illustrative only and is for ease of illustration and understanding. Power module 100 of the present disclosure may include any number of power devices 302.

Gate control and sense signals significantly affect the switching performance of power module 100 and can be particularly important at paralleled switch positions 104. The signal loop can be optimized in power module 100 for high performance, robustness, and uniform current sharing. In some aspects, a multilayer printed circuit board (PCB) may be used for the signal loops. In this respect, parallel planes can be used for flux removal and further inductance reduction. Therefore, the wide and short paths can double themselves to cancel out the magnetic field. This helps provide the best possible signal loop given the geometric constraints of the power module 100. Similar to the power loop, the path can be configured to be of limited length and wide cross-section, and the associated external components can be placed as physically close to the signal terminals 502 and 504 as possible.

For paralleled arrays of power devices 302 such as transistors, especially MOSFETs, the timing and magnitude of the gate currents must be balanced to result in consistent turn-on and turn-off conditions. Power module 100 includes individual ballasting resistors 820 (R _G1 , R _G2 , R _G3 , R _G4 ) that can be placed in close proximity to the gate of power device 302, separated only by gate wire bonds. Available. Individual ballasting resistors 820 (R _G1 , R _G2 , R _G3 , R _G4 ) have low resistance and may help buffer the current flowing to each individual power device 302 . Individual ballasting resistors 820 (R _G1 , R _G2 , R _G3 , R _G4 ) serve to isolate the gates of power devices 302 to prevent oscillation and provide equalized turn-on for paralleled power devices 302. Helps ensure signal. A single external resistor (R _DRIVER ) may be used and connected to these paralleled resistors 820 (R _G1 , R _G2 , R _G3 , R _G4 ) to control the turn-on rate of the effective switch position 104. In one aspect, a ballasting resistor 820 may be associated with each power device 302. In one aspect, an individual ballasting resistor 820 may be associated with each individual power device 302.

In a further aspect, power module 100 may include individual ballasting source Kelvin resistors 822 (R _S1 , R _S2 , R _S3 , R _S4 ) that may be placed in close proximity to the source Kelvin connections of power device 302 . Available. In one aspect, source Kelvin resistors 822 (R _S1 , R _S2 , R _S3 , R _S4 ) may be separated only by source Kelvin wire bonds. In one aspect, a source Kelvin resistor 822 may be associated with each power device 302. In one aspect, an individual source Kelvin resistor 822 may be associated with each individual power device 302. Source Kelvin resistors 822 (R _S1 , R _S2 , R _S3 , R _S4 ) may have low resistance and may help buffer the current flowing into the source Kelvin connections of each of the individual power devices 302 . Source Kelvin resistors 822 (R _S1 , R _S2 , R _S3 , R _S4 ) serve to isolate the source Kelvin connection of the power device 302 to prevent oscillation and maintain an equalized signal to the paralleled power device 302. Helps ensure In certain aspects, the source Kelvin resistors 822 (R _S1 , R _S2 , R _S3 , R _S4 ) are configured and implemented to resolve any mismatches in the individual power devices 302, the layout of the individual power devices 302, etc. It can be.

In certain aspects, source Kelvin resistors 822 (R _S1 , R _S2 , R _S3 , R _S4 ) prevent or reduce feedback oscillations between individual power devices 302 and attenuates, isolates the source Kelvin signals between the individual power devices 302, inhibits current flow between the source Kelvin signals of the individual power devices 302, and reduces the current flow between the source Kelvin signals of the individual power devices 302. The device may be configured and implemented to equalize the flow and force the current flowing through the individual power device 302 to flow through the current path. Moreover, the source Kelvin resistor 822 (R _S1 , R _S2 , R _S3 , R _S4 ) reduces the signaling inductance and ensures that the gate operation of the power device 302 does not slow down, and the gate of the power device 302 /Source overvoltage can be minimized.

Source Kelvin resistors 822 (R _S1 , R _S2 , R _S3 , R _S4 ) can be used in surface mount packages, integrated thick films, printed thick films, wire bondable chips, “natural” resistance paths (essentially material/structural interface that adds resistance), etc. In one or more aspects, the resistance values of source Kelvin resistors 822 (R _S1 , R _S2 , R _S3 , R _S4 ) and resistors 820 (R _G1 , R _G2 , R _G3 , R _G4 ) may be equivalent. . In one or more aspects, the resistance values of source Kelvin resistors 822 (R _S1 , R _S2 , R _S3 , R _S4 ) and resistors 820 (R _G1 , R _G2 , R _G3 , R _G4 ) may be different. . In one or more aspects, the resistance value of source Kelvin resistor 822 (R _S1 , R _S2 , R _S3 , R _S4 ) may be between 0.5 ohms and 1.5 ohms. In one or more aspects, the resistance value of source Kelvin resistor 822 (R _S1 , R _S2 , R _S3 , R _S4 ) may be between 0.5 ohms and 2 ohms. In one or more aspects, the resistance value of the source Kelvin resistors 822 (R _S1 , R _S2 , R _S3 , R _S4 ) may be between 0.5 ohms and 5 ohms. In one or more aspects, the resistance value of source Kelvin resistor 822 (R _S1 , R _S2 , R _S3 , R _S4 ) may be between 0.5 ohms and 20 ohms. In one or more aspects, the resistance of resistors 820 (R _G1 , R _G2 , R _G3 , R _G4 ) may be between 1 ohm and 20 ohms. In one or more aspects, the resistance of resistors 820 (R _G1 , R _G2 , R _G3 , R _G4 ) may be between 1 ohm and 5 ohms. In one or more aspects, the resistance value of resistor 820 (R _G1 , R _G2 , R _G3 , R _G4 ) may be between 1 ohm and 10 ohms. In one or more aspects, the resistance of resistor 820 (R _G1 , R _G2 , R _G3 , R _G4 ) may be between 1.5 ohms and 6 ohms.

34 shows a top view of an effective gate switching loop and power module according to aspects of the present disclosure. In particular, FIG. 34 shows that the signal board or signal interconnect assembly 616 may have rails 816, 818 connecting to gate and source Kelvin connector terminals 502, 504 on the edge of the board of the signal interconnect assembly 616. It shows that it is possible. Rails 818 can be connected to gate wire bond pads via individual gate resistors 820 (resistors R _G1 , R _G2 , _... It can be connected to the source pad of the power device 302 via _S1 , R _S13 , R _S3 , ... R _SN ). This can be considered a true Kelvin connection because the source Kelvin bond is not in the current path of the power source bond. Kelvin connections can be important for accurate and efficient control and can reduce the impact of high drain-to-source currents on the signal loop.

34 further illustrates optional signal connections 506, 508 on signal interconnect assembly 616. Connections 506 and 508 may be used for temperature measurement or other forms of internal sensing. In some aspects, internal sensing may include diagnostic sensing, including diagnostic signals that may be generated from diagnostic sensors, which may include strain gauges that detect vibration, sensors that detect humidity, and the like. Additionally, diagnostic sensors can detect any environmental or device characteristic.

In one aspect, the sensor may be a temperature sensor 610 that may be placed on the power substrate 606 or base plate 602. In one aspect, the power substrate 606 or base plate 602 may have a metal surface and/or a conductive surface that supports the power device 302. In one aspect, a portion 850 of the surface of the power substrate 606 or base plate 602 may be different from the surface supporting the power device 302. In one aspect, portion 850 may be a portion where the metal surface and/or conductive surface has been removed, etched, or absent. In one aspect, the temperature sensor 610 may be placed on the power substrate 606 or base plate 602 in an area where the metal surface of the power substrate 606 or base plate 602 has been removed or is not present. In this respect, temperature sensor 610 can be isolated and provide more accurate temperature readings. Of course, other locations and arrangements for temperature sensor 610 are also contemplated.

Implementation of this signal loop or signal interconnect assembly 616 can ensure quality control and measurements across any combination of power devices 302 paralleled at switch positions 104 . Standard PCB board-to-board connectors can allow direct connection to external gate drivers and control circuitry.

As shown, this gate distribution network can be implemented in a PCB. It can also be formed as a thick film circuit directly on the primary power substrate 630 and directly on the base plate 602. This has the advantage of reducing the component count of the power module 100 as well as the option to print resistors 820 and 822. Laterally, thick film or deposited and patterned metal implementations may be used for the housing sidewalls 612 and/or the housing lid 618 itself. Resistors 820, 822 may be larger than surface mount components on a PCB because solder terminals may not be required and resistors 820, 822 may be actively cooled from a cold plate, minimizing thermal size constraints on the components. It could be much smaller.

Figure 35 shows a perspective view of a configuration including a power module and a housing according to aspects of the present disclosure, Figure 36 shows a side view of the configuration of Figure 35, Figure 37 shows a partial perspective view of the configuration of Figure 35, and Figure 38 shows a perspective view of another part of the arrangement of Figure 35, Figure 39 shows a perspective view of another part of the arrangement of Figure 35, Figure 40 shows a perspective view of another part of the arrangement of Figure 35, and Figure 41 shows a perspective view of another part of the arrangement of Figure 35. Figure 35 shows another partial perspective view of the configuration.

In particular, FIGS. 35 to 40 show power module 100, bus bar 900, driver 400, controller for power module 100 and driver 400, capacitor 102, sensor 980, etc. A construct 3500 is shown that can be used to implement one or more. In one aspect, component 3500 includes power module 100, bus bar 900, driver 400, controllers for power module 100 and driver 400, and capacitor 102, as described herein. , sensor 980, etc. can be used. In one aspect, component 3500 may utilize one or more different types of power modules, bus bars, drivers, controllers for the power modules and drivers, capacitors, sensors, etc.

In one aspect, component 3500 may be implemented in a wide variety of power topologies, including half bridge, full bridge, three phase, booster, chopper, DC-DC converter, and similar arrangements and/or topologies. 35-40, component 3500 is shown as implementing a three-phase topology.

Referring particularly to FIG. 35 , construct 3500 may include housing 3502 . Housing 3502 may include a top portion 3504, a middle portion 3506, and a bottom portion 3508. However, housing 3502 may be implemented with fewer or more housing parts. In one aspect, housing 3502 may be composed of synthetic materials, plastic materials, metal materials, etc. In one aspect, housing 3502 may be comprised of a plastic material. In one aspect, housing 3502 may be comprised of a plastic material that can be injection molded.

With further reference to Figure 35, in one aspect top portion 3504 may be mechanically secured to construct 3500 with mechanical fastener 3512. In other aspects, top portion 3504 may be secured to construct 3500 using other assemblies and/or configurations. In one aspect, top portion 3504 may include cooling slots 3510 that allow air within construction 3500 to flow therethrough for cooling purposes.

Referring further to FIG. 35 , in one aspect, middle portion 3506 may be arranged between top portion 3504 and bottom portion 3508. Bottom portion 3508 may be configured to receive top portion 3504 and middle portion 3506 to provide enclosure for the various components of construct 3500. In one aspect, middle portion 3506 and/or bottom portion 3508 may be further configured to allow phase output 930 to extend therethrough. In other aspects of implementing other topologies, the middle portion 3506 and/or bottom portion 3508 may be further configured to allow other types of outputs to extend therethrough.

With further reference to Figure 35, in one aspect the bottom portion 3508 may support the middle portion 3506. In one aspect, bottom portion 3508 may include support 3514 that supports phase output 930. In another aspect, bottom portion 3508 may include supports 3514 to support different types of output when implementing different topologies.

In one or more aspects, the bottom portion 3508 may further include an aperture 3528 configured to extend therefrom a fluid connection 3516 to the cold plate 902. In one aspect, fluid connection 3516 may receive a fluid source and/or convey fluid for cooling purposes in association with cold plate 902.

Referring to FIG. 36 , in one aspect, structure 3500 may include conductors 910 and 912 . In one aspect, conductors 910, 912 may be arranged on opposite sides of structure 3500 with respect to phase output 930. In one aspect, conductors 910, 912 may be arranged on opposite sides of component 3500 for different types of outputs for different types of topologies.

In one aspect, component 3500 may include a cooling fan 3518. Cooling fan 3518 may be configured to move air through housing 3502 of assembly 3500 to cool various components of assembly 3500. In one aspect, cooling fan 3518 is positioned in an opening on a side of component 3500 such that cooling fan 3518 moves air through the opening and also through cooling slot 3510 as shown in FIG. 35. can be located

In one aspect, construct 3500 may include electrical interface 3520. In one aspect, electrical interface 3520 includes one or more power modules 100, bus bars 900, drivers 400, controllers, capacitors 102, and sensors for power modules 100 and drivers 400. 980), etc., data can be connected and exchanged. In one aspect, the data may be control signals, sensor signals, drive signals, signals for loading, removing or modifying software, etc. In one aspect, electrical interface 3520 (or other connectors along this wall) may alternatively or additionally provide low voltage (12-24 V) power for controller and driver 400. In certain aspects, component 3500 may be configured to be connected to a power source at conductors 910, 912 and fully operated, controlled, and analyzed via electrical interface 3520 and provide output from phase output 930. do.

37, construction 3500 is shown with top portion 3504 removed for ease of illustration and understanding. In one aspect, as shown in FIG. 37, middle portion 3506 may include portion 3526 for receiving mechanical fastener 3512. 37 further illustrates controller 3522, driver 400, and wired connection 3524 between controller 3522 and driver 400.

38, configuration 3500 is shown with controller 3522, driver 400, and wired connection 3524 removed from middle portion 3506 for ease of illustration and understanding. In particular, Figure 38 shows surfaces for supporting controller 3522, driver 400, wired connection 3524, etc.

39 shows construction 3500 with middle portion 3506 removed for ease of illustration and understanding. In particular, Figure 39 shows the arrangement of the bus bar 900, power module 100, cooling plate 902, and sensor 980. In particular, FIG. 39 shows the arrangement and configuration of bus bar 900, power module 100, cold plate 902, and sensor 980 supported by bottom portion 3508.

FIG. 40 shows construction 3500 with middle portion 3506 and bus bar 900 removed for ease of illustration and understanding. As shown in FIG. 40 , the arrangement of power module 100, cold plate 902, and sensor 980 is depicted for construct 3500. In particular, Figure 40 shows components 3530 for securing the attachment of the input and output connections to the phase output 930 and conductors 910. In one aspect, component 3530 for securing attachment may be a mechanical fastener. In one aspect, a mechanical fastener may be a female threaded component configured to receive a corresponding male threaded component. In one aspect, the mechanical fastener may be a hex nut.

FIG. 41 shows configuration 3500 with middle portion 3506, bus bar 900, power module 100, cold plate 902, and sensor 980 removed for ease of illustration and understanding. As shown in FIG. 41 , bottom portion 3508 of structure 3500 may include structure 3540 for connecting to middle portion 3506 . As shown in FIG. 41 , bottom portion 3508 of structure 3500 may include structure 3542 for retaining at least power module 100 and cold plate 902 . As shown in FIG. 41 , bottom portion 3508 of structure 3500 may include structure 3544 for retaining at least capacitor 102 . In some aspects, the structure may be a rib, a reinforcing portion, a mechanical fastener receiving portion, etc.

In one aspect, component 3500 may be implemented as an evaluation system, evaluation kit, test system, etc. This implementation is broadly defined as an evaluation kit for brevity. In certain aspects, an evaluation kit implementation of component 3500 may be configured to be connected to a power source at conductors 910, 912, and fully operational, controlled, and analyzed via electrical interface 3520, and have a phase output 930. ) can provide output from. In this regard, a user may implement an evaluation kit implementation of component 3500 to perform testing, mockups, etc. prior to implementing and manufacturing a system implementing the power module 100 of the present disclosure. In one aspect, a user may implement an evaluation kit implementation of component 3500 to perform testing, mock-ups, etc. related to a specific application of power module 100. In one aspect, applications include power systems, motor systems, automotive motor systems, charging systems, automotive charging systems, vehicle systems, industrial motor drives, embedded motor drives, uninterruptible power supplies, AC-DC power supplies, welder power supplies , military systems, inverters, inverters for wind turbines, solar power panels, tidal power plants, electric vehicles (EV), converters, etc.

Figure 42 illustrates a process for implementing and operating a configuration including a power module. In particular, Figure 42 illustrates a process 4200 for implementing and operating a configuration. In one aspect, process 4200 may be implemented using construct 3500 disclosed herein.

Process 4200 may further include assembling power module 100 and associated components into housing 3502 to form construct 3500 as shown in box 4202. In one aspect, the component 3500 includes a power module 100, a bus bar 900, a driver 400, a controller for the power module 100 and the driver 400, a capacitor 102, a sensor 980, etc. Can be assembled to include more than one. In one aspect, component 3500 includes power module 100, bus bar 900, driver 400, controllers for power module 100 and driver 400, capacitor 102, It may be assembled with one or more of the sensors 980, etc. In one aspect, component 3500 may be assembled to include one or more different types of power modules, bus bars, drivers, controllers for the power modules and drivers, capacitors, sensors, etc.

Process 4200 may further include connecting the configuration to a power source 4204. In one aspect, conductors 910 and 912 of component 3500 may be connected to a power source. In one aspect, conductors 910 and 912 of construct 3500 can be connected to a DC power source.

Process 4200 may further include actuating component 3500 (4206). In one aspect, the component 3500 includes a power module 100, a bus bar 900, a driver 400, a controller for the power module 100 and the driver 400, a capacitor 102, a sensor 980, etc. One or more may be activated to provide output. In one aspect, component 3500 may be programmed to implement aspects of operating 4206 of component 3500. In one aspect, a controller of component 3500 may be programmed to implement aspects of operating component 3500. In one aspect, driver 400 of component 3500 may be programmed to implement aspects of operating the component.

Process 4200 may further include measuring various operating parameters 4208 of construct 3500 including power module 100 and associated components. In one aspect, component 3500 can be operated to have various internal sensors output sensor data. In one aspect, component 3500 can be connected to an external sensor that operates and outputs sensor data, such as an oscilloscope, computer system, etc. In one aspect, various sensor data may be collected by a computer system. A computer system may include a processor, memory, operating system, etc. In one or more aspects, the output sensor data may be based on and/or include switching losses, temperature, inductance, switching speed, overshoot, waveform analysis, etc. associated with power module 100 or other components implemented by component 3500. can do. In one aspect, measuring various operating parameters 4208 of component 3500 may be specific to the specific application of power module 100. In one aspect, applications include power systems, motor systems, automotive motor systems, charging systems, automotive charging systems, vehicle systems, industrial motor drives, embedded motor drives, uninterruptible power supplies, AC-DC power supplies, welder power supplies , military systems, inverters for wind turbines, solar power panels, tidal power plants, electric vehicle vehicles (EV), converters, etc.

Process 4200 may further include outputting operating parameters to a man machine interface (4210). In one aspect, operating parameters may be analyzed by a computer system. In one aspect, a computer system can analyze operating parameters, including sensor data, to generate output. In one aspect, output may be provided to a man machine interface. In one aspect, the man machine interface may include one or more of a display, printout, analysis file, etc.

Process 4200 may further include modifying aspects of construct 4212 and repeating process 4200. In one aspect, construct 3500 may be modified to include additional components consistent with the present disclosure. In one aspect, construct 3500 may be modified to include fewer components consistent with the present disclosure. In one aspect, the controller program of component 3500 may be modified. In one aspect, the driver 400 program of component 3500 may be modified. In one aspect, the operating voltage or current for component 3500 may be modified.

In one or more aspects, power module 100 of the present disclosure can be configured to operate with various performance characteristics. However, performance characteristics may not necessarily be limited to the specific implementations and aspects described in this disclosure. Illustrative details of example configurations and implementations that may provide various performance characteristics as well as partial performance characteristics are described below. However, the various performance characteristics should not be limited to the specific disclosed aspects of power module 100. In certain aspects, various performance characteristics and example configuration implementations may be associated with lower voltage implementations. In one aspect, low voltage implementations can be defined to include implementations that operate below 3.4 Kv. In one aspect, low voltage implementations can be defined to include implementations that operate below 3.3 Kv. In one aspect, low voltage implementations may be defined to include implementations that operate below 3.0 Kv. In one aspect, low voltage implementations include implementations operating in the ranges 100 v - 3400 v, 100 v - 3300 v, 100 v - 3000 v, 100 v - 2500 v, 100 v - 2000 v, and 100 v - 1700 V. . In one aspect, higher voltage implementations may be defined to include implementations operating greater than 3.4 Kv. In one aspect, higher voltage implementations may be defined to include implementations operating greater than 3.3 Kv. In one aspect, higher voltage implementations may be defined to include implementations operating greater than 3.0 Kv. On the one hand, higher voltage implementations are those that operate in the range 3400 v - 5000 v, 3300 v - 5000 v, 3000 v - 5000 v, 3400 v - 10000 v, 3300 v - 10000 v, 3000 v - 3000 v. Includes. In this regard, aspects of the present disclosure that implement lower voltage implementations as defined herein may be distinguished from higher voltage implementations as defined herein. For example, in some aspects the low voltage implementation may include spacing between conductors and/or terminals of power module 100, configuration of power loops within power module 100, basic layout of power module 100, power module 100 Solving the current carrying capacity and/or current carrying capacity of the power module 100, the substrate thickness of the power module 100, the terminal layout of the power module 100, the thermal performance of the power module 100, and the creepage distance of the power module 100. It can be distinguished from a higher voltage implementation based on one or more of the following: a configuration for solving a clearance problem of the power module 100, an insulation configuration of the power module 100, and a bus bar configuration of the power module 100. . In this regard, at least one or more of the above-mentioned aspects can distinguish low-voltage implementations from high-voltage implementations.

In one or more aspects, the power module 100 of the present disclosure may be configured to operate with the following parasitic stray inductances. In one aspect, the total stray inductance value of the threshold power switches of loop 114 shown in FIG. 1B of power module 100 may be less than 12 (nH). In one aspect, the total stray inductance value of the threshold power switches of loop 114 shown in FIG. 1B of power module 100 may be less than 11 (nH). In one aspect, the total stray inductance value of the threshold power switches of loop 114 shown in FIG. 1B of power module 100 may be less than 7 (nH). In one aspect, the total stray inductance value of the threshold power switch of loop 114 shown in FIG. 1B of power module 100 may be less than 4 (nH). In one aspect, the total stray inductance value of the threshold power switches of loop 114 shown in FIG. 1B of power module 100 may be less than 3 (nH).

In one aspect, the total stray inductance values of the threshold power switches of loop 114 shown in FIG. 1B of power module 100 are 12 (nH) to 2 (nH), 10 (nH) to 2 (nH), and 4 (nH). It may range from (nH) to 2 (nH).

In one aspect, the total stray inductance value of the threshold power switch of loop 114 shown in FIG. 1B of power module 100 will be less than 4 (nH) for power module 100 with a particular loop length and/or cross-sectional area. You can. In one aspect, the total stray inductance value of the threshold power switch of loop 114 shown in FIG. 1B of power module 100 will be less than 8 (nH) for power module 100 with a particular loop length and/or cross-sectional area. You can. In one aspect, the total stray inductance value of the threshold power switch of loop 114 shown in FIG. 1B of power module 100 will be less than 12 (nH) for power module 100 with a particular loop length and/or cross-sectional area. You can. In one aspect, the overall stray inductance value of the threshold power switch of loop 114 shown in FIG. 1B of power module 100 is 4 (nH) to 4 (nH) for power module 100 with a particular loop length and/or cross-sectional area. It can have a range of 2 (nH). In one aspect, the total stray inductance value of the threshold power switch of loop 114 shown in FIG. 1B of power module 100 is 8 (nH) to 8 (nH) for power module 100 with a particular loop length and/or cross-sectional area. It can have a range of 4 (nH). In one aspect, the total stray inductance value of the threshold power switch of loop 114 shown in FIG. 1B of power module 100 is 12 (nH) to 12 (nH) for power module 100 with a particular loop length and/or cross-sectional area. It can have a range of 8 (nH).

In one or more aspects, the power module 100 of the present disclosure may be configured to operate at the following switching speeds.

In one aspect, the switching speed of power module 100 may be less than 100 (A/ns) di/dt. In one aspect, the switching speed of power module 100 may be less than 90 (A/ns) di/dt. In one aspect, the switching speed of power module 100 may be less than 80 (A/ns) di/dt. In one aspect, the switching speed of power module 100 may be less than 50 (A/ns) di/dt. In one aspect, the switching speed of power module 100 may be less than 35 (A/ns) di/dt.

In one aspect, the switching speed of power module 100 may range from 30 to 100 (A/ns) di/dt. In one aspect, the switching speed of power module 100 may range from 30 to 70 (A/ns) di/dt. In one aspect, the switching speed of power module 100 may range from 40 to 90 (A/ns) di/dt. In one aspect, the switching speed of power module 100 may range from 30 to 40 (A/ns) di/dt.

In one aspect, the switching speed of power module 100 may be less than 120 (V/ns) dv/dt. In one aspect, the switching speed of power module 100 may be less than 100 (V/ns) dv/dt. In one aspect, the switching speed of power module 100 may range from 20 (V/ns) dv/dt to 100 (V/ns) dv/dt. In one aspect, the switching speed of power module 100 may range from 40 (V/ns) dv/dt to 100 (V/ns) dv/dt. In one aspect, the switching speed of power module 100 may range from 60 (V/ns) dv/dt to 100 (V/ns) dv/dt. In one aspect, the switching speed of power module 100 may range from 80 (V/ns) dv/dt to 100 (V/ns) dv/dt. In one aspect, the switching speed of power module 100 may range from 60 (V/ns) dv/dt to 80 (V/ns) dv/dt. In one aspect, the switching speed of power module 100 may range from 40 (V/ns) dv/dt to 60 (V/ns) dv/dt. In one aspect, the switching speed of power module 100 may range from 20 (V/ns) dv/dt to 40 (V/ns) dv/dt. In one aspect, the switching speed of power module 100 is 60 (V/ns) to 80 (V/ns), 40 (V/ns) to 60 (V/ns), 20 (V/ns) to 40 (V/ns) V/ns).

In one or more aspects, power module 100 of the present disclosure may be configured to operate with switching losses of:

In one aspect, the switching losses of power module 100 may be less than 0.5 (mJ/A) millijoules per ampere. In one aspect, the switching losses of power module 100 may be less than 0.4 (mJ/A) millijoules per ampere. In one aspect, the switching losses of power module 100 may be less than 0.25 (mJ/A) millijoules per ampere. In one aspect, switching losses of power module 100 may range from 0.5 (mJ/A) millijoules/ampere to 0.25 (mJ/A) millijoules/ampere. In one aspect, the switching losses of power module 100 may range from 0.25 (mJ/A) millijoules/ampere to 0.4 (mJ/A) millijoules/ampere.

In aspects of the present disclosure, the power module 100 width and length can be configured to make the power module 100 wider (more power devices 302, less inductance) or smaller (smaller size, lower cost). It can be expanded so that it can be done. Table 1 below shows various range implementations, including minimum actual width and maximum expected size (approximately 1 square meter). Power device utilization can be defined as a percentage calculated as the ratio of the power device area to the total power module area. In one aspect, area as used in this disclosure is calculated by width times length. In this regard, the width may be defined along an axis extending across the power module 100 as shown in FIG. 11 and the length may be defined along an axis perpendicular to the width as shown in FIG. 11 . Table 1 below provides a set of certain non-limiting specifications.

In one aspect of the present disclosure, power module 100 may have a power device utilization area in the range of 7-10%. In one aspect of the present disclosure, power module 100 may have a power device utilization area in the range of 6-8%. In one aspect of the present disclosure, power module 100 may have a power device utilization area in the range of 5-7%.

In various aspects, the power module 100 height may also be expandable. In this case, the power module 100 may be configured as thin as possible to minimize inductance. The height can be set based on (A) the creepage distance and clearance specifications required for 1700 V operation, (B) the height of the wire bond, and (C) the type of encapsulation material used. For lower range voltage modules (650V), there may be some design changes to reduce the height. Conversely, power module 100 may be made higher for higher range voltage devices. In various aspects, height as used in this disclosure is defined as perpendicular to the width and length. Referring to Figure 4A, an example height of power module 100 is shown. The height of the power modules is 7 mm to 30 mm, 9 mm to 11 mm, 11 mm to 13 mm, 13 mm to 15 mm, 15 mm to 17 mm, 17 mm to 19 mm, 19 mm to 21 mm, 21 mm to 23 mm. mm, may range from 23 mm to 27 mm. [Table 2] below provides non-limiting specifications for a specific set.

Power contact parameters

Power contacts or terminals 106, 108, 110 can be wide and configured and constructed to fill the maximum percentage of power module 100 possible given actual voltage creepage/clearance limitations. The width ratio compares the width of the contacts or terminals 106, 108, 110 to the width of the power module 100. In one aspect, the width of the power module 100 may be the width of the base plate 602. In one aspect, the width of the power module 100 may be the width of one or more power substrates 606. In one aspect, the width of the power module 100 may be the width between the housing side walls 612. In one aspect, the width of the power module 100 may be the width of the housing lid 618. The length ratio takes the contact lengths of all three contacts or terminals 106, 108, 110 and compares them to the overall power module 100 length. In one aspect, the length of the power module 100 may be the length of the base plate 602. In one aspect, the length of power module 100 may be the length of one or more power substrates 606. In one aspect, the length of the power module 100 may be the length between the housing side walls 612. In one aspect, the length of power module 100 may be the length of housing lid 618. The area ratio compares the total contact area to the total power module 100 area. In one aspect, the area of the power module 100 may be the area of the base plate 602. In one aspect, the area of power module 100 may be that of one or more power substrates 606. In one aspect, the area of the power module 100 may be the area between the housing side walls 612. In one aspect, the area of power module 100 may be the area of housing lid 618. The base ratio compares the overall contact base width to the power module 100 width. This assumes a solder fillet around the base perimeter. In one aspect, the width of the power module 100 may be the width of the base plate 602. In one aspect, the power module 100 width may be the width of one or more power substrates 606. In one aspect, the width of the power module 100 may be the width between the housing side walls 612. In one aspect, the width of the power module 100 may be the width of the housing lid 618. [Table 3] below provides non-limiting specifications for a specific set.

In one aspect, power module 100 may have a terminal area ratio greater than 20%. In one aspect, power module 100 may have a terminal area ratio greater than 25%. In one aspect, power module 100 may have a terminal area ratio greater than 30%. In one aspect, power module 100 may have a terminal area ratio ranging from 20% to 25%. In one aspect, power module 100 may have a terminal area ratio ranging from 25% to 30%. In one aspect, power module 100 may have a terminal area ratio ranging from 30% to 35%.

In one aspect, power module 100 may have a base ratio ranging from 70% to 80%. In one aspect, power module 100 may have a base rate ranging from 80% to 90%. In one aspect, power module 100 may have a base rate ranging from 90% to 95%.

In various aspects, base 636 may be configured to 'feather' or 'digitate' the feet of a contact. In some aspects, split feet in base 636 can provide more space for solder to fillet around the sides of the connector, adding strength in multiple directions and axes. Split base 636 can relieve stress and improve reliability.

The vertical offset 702 of the V+ and V- power contacts can be used to minimize the overall loop inductance of the system by reducing the need for bending or offset of the external bus bar 900. In some aspects, reduced bus bar 900 complexity may also reduce cost. In one aspect, vertical offset 702 may be 3.25 mm (3 mm for metal thickness and 0.25 mm for laminated insulation). In other aspects, vertical offset 702 can have practical ranges such as 2 mm - 3 mm, 3 mm - 4 mm, 4 mm - 5 mm, and 5 mm - 6 mm. [Table 4] below provides non-limiting specifications for a specific set.

substrate parameters

Power substrate 606 may also be configured to be as wide and as full of power devices 302 as possible. Aspects of the present disclosure include high device area/substrate area utilization. Power device 302 spacing may be determined by heat spread, thermal performance, process design rules for optimal manufacturability, etc. The power device ratio compares the active device area compared to the overall power substrate 606 width. In this regard, the width may be defined along an axis extending through the plurality of power devices 302 as shown in FIG. 11 . A portion of the width of the power substrate 606 may be used for overcurrent and temperature sensors 610. In some aspects, the absence of these features may result in increased power device ratio percentages. In one aspect, power module 100 may have an active device area greater than 60%. In one aspect, power module 100 may have an active device area greater than 65%. In one aspect, power module 100 may have an active device area greater than 70%. In one aspect, power module 100 may have an active device area of 60% to 65%. In one aspect, power module 100 may have an active device area of 65% to 70%. In one aspect, power module 100 may have an active device area of 70% to 75%. [Table 5] below provides non-limiting specifications for a specific set.

In some aspects, the power substrate 606 metal thickness may be configured as follows. In many ways, metal thickness can be a trade-off between thermal performance, package resistance, cost, etc. In one aspect, the power substrate 606 metal thickness may be less than 0.5 mm. In one aspect, the power substrate 606 metal thickness may be less than 0.3 mm. In one aspect, the power substrate 606 metal thickness may be 0.2 mm. In one aspect, the power substrate 606 metal thickness may range from 0.1 mm to 0.6 mm, 0.2 mm to 0.3 mm, 0.3 mm to 0.4 mm, 0.4 mm to 0.5 mm, and 0.5 mm to 0.6 mm.

wire bond parameters

Power wire bond 628 may be one of the diameters listed in Table 6 below. In one aspect, a 12 mil (0.30 mm) diameter aluminum bond may be used. In one aspect, the diameter of the bond may be 0.15 mm to 0.25 mm, 0.2 mm to 0.3 mm, 0.25 mm to 0.35 mm, 0.35 mm to 0.45 mm, and 0.45 mm to 0.55 mm. In other aspects, larger diameter aluminum bonds may be used as well as larger diameter copper bonds. In another aspect, soldered copper tabs can be used for maximum current carrying capacity. In one aspect, the diameter of the power wire bond 628 may range from 0.15 mm to 0.6 mm. In one aspect, the diameter of the power wire bond 628 may range from 0.19 mm to 0.52 mm. In one aspect, the diameter of the power wire bond 628 may range from 0.2 mm to 0.51 mm. [Table 6] below provides non-limiting specifications for a specific set.

In one aspect, the power wire bond 628 may include an aluminum wire bond, an aluminum ribbon bond, a copper wire bond, a copper ribbon bond, soldered copper, a copper sintered tab, etc., as shown in Table 7 below. .

In certain aspects, wire bond 628 may be configured to have a loop geometry as listed in Table 8 below. In various aspects, the loop geometry can be configured to be as low profile and short as possible to minimize drag. Bond length is determined by the layout of the die of power device 302 and the configuration of power module 100. In one aspect, the wire bond length can range from 4 mm to 12 mm. In one aspect, the wire bond length can range from 5 mm to 11 mm. In one aspect, the wire bond loop height can range from 0.5 mm to 3 mm. In one aspect, the wire bond loop height can range from 1 mm to 2.5 mm. [Table 8] below provides non-limiting specifications for a specific set.

In one aspect, a configuration may utilize an increased or maximum number of bonds 628 per power device 302. The number of bonds 628 may vary depending on die size, pad area, and bond diameter. [Table 9] below provides non-limiting specifications for a specific set. In particular, the values listed below are for MOSFET implementations of various sizes.

In one aspect, each power device 302 may be implemented with 3 to 12 bonds 628. In one aspect, each power device 302 may be implemented with 4 to 10 bonds 628. In one aspect, each power device 302 may be implemented with more than four bonds 628. In one aspect, each power device 302 may be implemented with more than six bonds 628. In one aspect, each power device 302 may be implemented with more than eight bonds 628. In one aspect, each power device 302 may be implemented with more than 10 bonds 628.

Inductance and switching parameters

The inductance of the power module 100 may be determined by total loop length, cross-sectional area, flux removal, etc. In various aspects, the power module 100 reduces inductance by configuring the power module 100 to have a low profile, using wide power contacts, and achieving some flux removal from the power module 100 when the loop folds on itself. It can be configured to minimize. The width of the power module 100 can also have a significant effect on the inductance.

[Table 10] below is based on a specific implementation of the power module 100 and provides inductance and other simulation results to determine the inductance of other configurations. The lowest inductance configuration assumes that the power module 100 can also be configured thinner (i.e., the 650 V thickness previously listed). The dV/dt maximum is not a limitation for power module 100.

The di/dt values were calculated as the theoretical maximum assuming a 1200 V device and an 800 V bus. This can result in overshoot of up to 400 V. In this regard, the calculations assumed a 2 nH bus loop inductance added in series with the power module 100. Assuming this, in one respect the fastest the power module 100 can switch is listed in Table 10 below.

In one or more respects, losses were determined by testing specific implementations using very aggressive switching. In one aspect, losses can range from 0.25 to 0.050 mJ/A, 0.25 to 0.040 mJ/A, and 0.25 to 0.035 mJ/A. [Table 10] below provides non-limiting specifications for a specific set.

In aspect 1, the total stray inductance value of power module 100 may range from 9 (nH) to 11 (nH). In aspect 2, the total stray inductance value of power module 100 may range from 6 (nH) to 7 (nH). In aspect 3, the total stray inductance value of power module 100 may range from 3 (nH) to 4 (nH). In aspect 4, the total stray inductance value of power module 100 may range from 2 (nH) to 3 (nH).

43-58 illustrate power modules according to aspects of the present disclosure.

In this regard, due to the high current density of the power device 302 and other components, the thermal performance of the power module 100 of FIGS. 43-58 maximizes heat flux, reduces system size, reduces cost, etc. It can be configured for. In particular, the power module 100 shown in FIGS. 43-58 may include any one or more of the aspects as disclosed herein. Moreover, the power module 100 of FIGS. 43-58 may be further configured for direct cooling to maximize heat flux, reduce system size, reduce cost, etc. Additionally, implementing cooling directly into the power module 100 eliminates the thermal interface between the power module 100 and the cold plate or heat sink, as well as any material or structure arranged between the top surface of the cold plate and the cooling fluid. It can be removed. In this regard, prior art implementations have included a thermal interface material (TIM) arranged at the interface between the power module and the cold plate, and the utilization of TIM may have problems such as surface application, aging, pumping out, etc. I was able to. By directly cooling the surface of the base plate 602 of the power module 100, a greater amount of heat flux can be handled in the power module 100 and associated structures.

In one aspect, the power module 100 may include a plurality of pin fins 642. In one aspect, the plurality of fins 642 may be configured to transfer heat from one or more components of power module 100. In one aspect, the plurality of pins 642 may be configured for cooling one or more components of power module 100. In one aspect, the plurality of pins 642 may be configured for direct cooling of one or more components of power module 100. In one aspect, the plurality of fins fins 642 may be configured to directly cool one or more components of the power module 100 in conjunction with the cold plate 902 . In one aspect, the plurality of fin fins 642 may be configured to allow coolant to pass through the fin fins 642.

In one aspect, the base plate 602 may include a plurality of pin pins 642. In one aspect, a plurality of pin pins 642 may be arranged on the surface of the base plate 602. In one aspect, a plurality of pin pins 642 may be arranged on the bottom surface of the base plate 602. In one aspect, a plurality of pin pins 642 may be arranged on the bottom surface of the base plate 602 on the side of the base plate 602 opposite the housing side wall 612.

In one aspect, the plurality of fins 642 may form a channel parallel to the axis 654. In one aspect, the plurality of fins 642 may form a channel parallel to the axis 656. In one aspect, the plurality of fins 642 may form channels that are staggered or inclined about axis 654. In one aspect, the plurality of fins 642 may form channels that are staggered or inclined about axis 656.

The arrangement of the plurality of fins 642 and the channels arranged between the plurality of fins 642 include movement of coolant around the plurality of fins 642, heat transfer from the plurality of fins 642 to the coolant, A plurality of fins to increase heat transfer may be configured to increase or promote reduction of the surface layer and/or barrier layer adjacent to the fins 642.

Referring to FIGS. 46, 50, and 54, each of the pins 642 may be formed integrally with the base plate 602. In another aspect, each of the pin pins 642 may be attached to the base plate 602 by welding, adhesive, soldering, brazing, etc. In one aspect, each pin pin 642 may include a base portion 644 connected to a base plate 602 .

In one aspect, pin fin 642 may be formed of the same material as base plate 602. In one aspect, pin fin 642 may be formed of the same material as base plate 602 to reduce weight. In one aspect, pin pin 642 may be formed of a different material than the material of base plate 602. In one aspect, pin pin 642 may be formed of a metal material. In one aspect, pin pin 642 may include copper. In one aspect, pin pin 642 may be formed of copper.

In one aspect, each pin pin 642 may include one or more surfaces 646 extending from the base portion 644 . In one aspect, each pin pin 642 can have a termination surface 648. In one aspect, the longitudinal surface may be flat, contoured, uneven, pointed, or curved. In one aspect, one or more surfaces 646 may be tapered as they extend to the termination surface 648. In one aspect, one or more surfaces 646 may be perpendicular to the surface of base plate 602 as they extend to end surface 648 .

In one aspect, each of the pins 642 may have a cross-sectional shape about a plane parallel to the surface of the base plate 602. In this regard, pin pin 642 may have a square cross-sectional shape, a rectangular cross-sectional shape, a circular cross-sectional shape, a contoured cross-sectional shape, an oval cross-sectional shape, a symmetrical cross-sectional shape (along one or more axes), an asymmetrical cross-sectional shape (along one or more axes). ), it may have an airfoil-shaped cross-sectional shape, a wing-shaped cross-sectional shape, etc. Additionally, the pin pin 642 may have a first shape among the above-described shapes, a plurality of the above-described shapes, etc. However, the pin pin 642 may be implemented as a structure of any shape on the base plate 602 of the power module 100.

In one aspect, longitudinal surface 648 may have a cross-sectional shape about a plane parallel to the surface of base plate 602. In this regard, longitudinal surface 648 can be a square cross-sectional shape, a rectangular cross-sectional shape, a circular cross-sectional shape, a contoured cross-sectional shape, an oval cross-sectional shape, a symmetrical cross-sectional shape (along one or more axes), an asymmetric cross-sectional shape (along one or more axes). ), it may have an airfoil-shaped cross-sectional shape, a wing-shaped cross-sectional shape, etc.

In one aspect, base portion 644 may have a cross-sectional shape about a plane parallel to the surface of base plate 602. In this regard, base portion 644 may have a square cross-sectional shape, a rectangular cross-sectional shape, a circular cross-sectional shape, a contoured cross-sectional shape, an oval cross-sectional shape, a symmetrical cross-sectional shape (along one or more axes), an asymmetrical cross-sectional shape (along one or more axes). ), it may have an airfoil-shaped cross-sectional shape, a wing-shaped cross-sectional shape, etc.

In one aspect, base portion 644 may have the same cross-sectional shape as the longitudinal surface 648. In one aspect, base portion 644 may have the same cross-sectional shape and size as end surface 648. In one aspect, base portion 644 may have the same cross-sectional shape and a different size than end surface 648. In one aspect, base portion 644 may have a cross-sectional shape that is different than the cross-sectional shape of end surface 648.

In one aspect, pin pin 642 may be formed using one or more operations including machining, forging, molding, stamping, deforming, etc. to form a pin pattern of pin pin 642 as shown in the figure. may be formed, and the pin pin 642 may be attached using welding, adhesive, soldering, brazing, etc. However, fin fins 642 may be formed using any fabrication method and/or technique known to those skilled in the art for creating fins and fin surfaces on base plate 602.

In one aspect, referring to FIG. 46, the diameter or length (L) of pin pin 642 defined parallel to the surface of base plate 602 along base portion 644 is 1 mm - 8 mm, 1 mm. - It can be 2 mm, 2 mm - 3 mm, 3 mm - 4 mm, 4 mm - 5 mm, 5 mm - 6 mm, 6 mm - 7 mm or 7 mm - 8 mm. These dimensions are equally applicable to all configurations of pin pin 642 disclosed herein.

In one aspect, referring to FIG. 46 , the height H of pin 642 defined perpendicular to the surface of base plate 602 from base portion 644 to end surface 648 is 1 mm - 12 mm. , 2 mm - 10 mm, 4 mm - 8 mm, 1 mm - 2 mm, 2 mm - 3 mm, 3 mm - 4 mm, 4 mm - 5 mm, 5 mm - 6 mm, 6 mm - 7 mm, 7 It may be mm - 8 mm, 8 mm - 9 mm, 9 mm - 10 mm, 10 mm - 11 mm or 11 mm - 12 mm. These dimensions are equally applicable to all configurations of pin pin 642 disclosed herein.

In one aspect, referring to FIG. 46 , the pin-to-pin spacing (S) of a pin 642 may be defined by the central axes of adjacent ones of the pin 642 being perpendicular to the base plate 602 and the spacing (S) is 2 mm - 12 mm, 4 mm - 10 mm, 2 mm - 3 mm, 3 mm - 4 mm, 4 mm - 5 mm, 5 mm - 6 mm, 6 mm - 7 mm, 7 mm - 8 mm, 8 mm - 9 mm, 9 mm - 10 mm, 10 mm - 11 mm or 11 mm - 12 mm. These dimensions are equally applicable to all configurations of pin pin 642 disclosed herein.

Figure 43 shows a perspective bottom side view of a power module according to aspects of the present disclosure, Figure 44 shows a side view of the power module according to Figure 43, Figure 45 shows a bottom side view of the power module according to Figure 43, Figure 46 shows a partial perspective bottom side view of the power module according to Figure 43;

43-46, each fin fin 642 may include one or more surfaces 646 extending from a base portion 644. In one aspect, pin pin 642 can have a termination surface 648. In one aspect, the longitudinal surface may be contoured or non-flat. In one aspect, one or more surfaces 646 may be tapered as they extend to a termination surface 648.

In one aspect, longitudinal surface 648 may have a cross-sectional shape about a plane parallel to the surface of base plate 602. In this regard, the longitudinal surface 648 may have an asymmetric cross-sectional shape, an airfoil-shaped cross-sectional shape, a wing-shaped cross-sectional shape, etc.

In one aspect, base portion 644 may have a cross-sectional shape about a plane parallel to the surface of base plate 602. In this regard, the base portion 644 may have a square cross-sectional shape, a rectangular cross-sectional shape, etc.

In one aspect, the plurality of fins 642 may form a channel parallel to the axis 654. In one aspect, the plurality of fins 642 may form a channel parallel to the axis 656.

Figure 47 shows a perspective bottom side view of a power module according to aspects of the present disclosure, Figure 48 shows a side view of the power module according to Figure 47, Figure 49 shows a bottom side view of the power module according to Figure 47, Figure 50 shows a partial perspective bottom side view of the power module according to Figure 47;

47-50, each pin fin 642 may include one or more surfaces 646 extending from a base portion 644. In one aspect, each pin pin 642 can have a termination surface 648. In one aspect, the longitudinal surface may be flat. In one aspect, one or more surfaces 646 may be tapered as they extend to a termination surface 648.

In one aspect, longitudinal surface 648 may have a cross-sectional shape about a plane parallel to the surface of base plate 602. In this regard, longitudinal surface 648 may have a circular cross-sectional shape, a contoured cross-sectional shape, an oval cross-sectional shape, a symmetrical cross-sectional shape, etc.

In one aspect, base portion 644 may have a cross-sectional shape about a plane parallel to the surface of base plate 602. In this regard, the base portion 644 may have a circular cross-sectional shape, a contoured cross-sectional shape, an oval cross-sectional shape, a symmetrical cross-sectional shape, etc.

In one aspect, base portion 644 may have the same cross-sectional shape as the longitudinal surface 648. In one aspect, base portion 644 may have the same cross-sectional shape and a different size than end surface 648.

In one aspect, the plurality of fins 642 may form a channel parallel to the axis 654. In one aspect, the plurality of fins 642 may form a channel parallel to the axis 656. In one aspect, the base portions 644 of adjacent ones of the pins 642 may converge, join, connect, and meet.

Figure 51 shows a perspective bottom side view of a power module according to aspects of the present disclosure, Figure 52 shows a side view of the power module according to Figure 51, Figure 53 shows a bottom side view of the power module according to Figure 51, Figure 54 shows a partial perspective bottom side view of the power module according to Figure 51;

51-54, each fin fin 642 may include one or more surfaces 646 extending from a base portion 644. In one aspect, each pin pin 642 can have a termination surface 648. In one aspect, the longitudinal surface may be flat or similar. In one aspect, one or more surfaces 646 may be tapered as they extend to a termination surface 648.

In one aspect, longitudinal surface 648 may have a cross-sectional shape about a plane parallel to the surface of base plate 602. In this regard, longitudinal surface 648 may have a square cross-sectional shape, a rectangular cross-sectional shape, a symmetrical cross-sectional shape, etc.

In one aspect, base portion 644 may have a cross-sectional shape about a plane parallel to the surface of base plate 602. In this regard, the base portion 644 may have a square cross-sectional shape, a rectangular cross-sectional shape, a symmetrical cross-sectional shape, etc.

In one aspect, base portion 644 may have the same cross-sectional shape as the longitudinal surface 648. In one aspect, base portion 644 may have the same cross-sectional shape and a different size than end surface 648.

In one aspect, the plurality of fins 642 may form a channel parallel to the axis 654. In one aspect, the plurality of fins 642 may form a channel parallel to the axis 656.

Figure 55 shows a perspective bottom side view of a power module according to aspects of the present disclosure, Figure 56 shows a side view of the power module according to Figure 55, and Figure 57 shows a bottom side view of the power module according to Figure 55.

55-57, each pin pin 642 may include one or more surfaces 646 extending from a base portion 644. In one aspect, each pin pin 642 can have a termination surface 648. In one aspect, the longitudinal surface may be flat or similar. In one aspect, one or more surfaces 646 may be tapered as they extend to a termination surface 648.

In one aspect, longitudinal surface 648 may have a cross-sectional shape about a plane parallel to the surface of base plate 602. In this regard, longitudinal surface 648 may have a square cross-sectional shape, a rectangular cross-sectional shape, a symmetrical cross-sectional shape, etc.

In one aspect, base portion 644 may have a cross-sectional shape about a plane parallel to the surface of base plate 602. In this regard, the base portion 644 may have a square cross-sectional shape, a rectangular cross-sectional shape, a symmetrical cross-sectional shape, etc.

In one aspect, base portion 644 may have the same cross-sectional shape as the longitudinal surface 648. In one aspect, base portion 644 may have the same cross-sectional shape and size as end surface 648.

In one aspect, the plurality of fins 642 may form channels that are staggered or inclined about axis 654. In one aspect, the plurality of fins 642 may form channels that are staggered or inclined about axis 654.

Figure 58 shows a perspective view of a power module implementation according to aspects of the present disclosure.

Referring to FIG. 58 , power module 100 implementing direct cooling with fin fins 642 may be disposed on and/or within a cold plate 902 . In particular, Figure 58 shows one of the power modules 100 that implements direct cooling with fin fins 642 as disclosed. In this regard, the Figure 58 implementation may include one, multiple, or all of the power modules 100 that implement cooling directly into the fin fins 642 as disclosed. In one aspect, power module 100 may be placed on either side of cold plate 902. In this regard, power modules 100 arranged on either side of the cold plate 902 may maximize power density, reduce complexity, and/or perform similar tasks. In one aspect, the power module 100 may be placed on one side of the cooling plate 902. Accordingly, the power module 100 can be directly cooled using the fin fin 642, the cooling plate 902, etc. As described further herein, directly cooled power module 100 can exhibit significantly higher thermal performance.

In one aspect, cold plate 902 may include any number of power modules 100 in lines on the top of cold plate 902 and the bottom of cold plate 902 depending on the desired topology. In one aspect, cold plate 902 may include any number of power modules 100 in a line on one side of cold plate 902 depending on the desired topology. In this regard, the cold plate 902 may be extended or shortened to match the number of power modules 100.

As further shown in FIG. 58 , a seal 908 may be arranged between the power module 100 and the cold plate 902 . The seal 908 may be an O-ring, gasket, etc. In some aspects, seal 908 may be epoxy, RTV silicone (room temperature vulcanized silicone), similar seal material, etc. In another aspect, the seal 908 may be formed by welding the base plate 602 directly to the cooling plate 902, brazing, etc.

In one aspect, the cold plate 902 can have a fluid connection 3516 that can be configured to receive a cooling fluid source and/or convey cooling fluid for cooling purposes in association with the cold plate 902. In one aspect, fluid connections 3516 may include threaded fittings, flange fittings, quick connect fittings, hose barb fittings, soldered tubes, welded tubes, etc. In one aspect, the cold plate 902 may have inlet ports, outlet ports, fluid channels, etc. that may be configured to evenly distribute fluid flow to the power module 100. The cold plate 902 may further include other considerations for mounting and sealing the power module 100 as well as mounting the assembly itself to other structures in the application, such as inverters, converters, etc.

In one aspect, the power module 100 of FIGS. 43-58 may be inserted into, implemented as, or configured as an application. The application may be a system that implements the power module 100 of FIGS. 43-58. Applications include power systems, motor systems, automotive motor systems, charging systems, automotive charging systems, vehicle systems, industrial motors, embedded motor drives, uninterruptible power supplies, AC-DC power supplies, welder power supplies, military systems, inverters , inverters for wind turbines, solar power panels, tidal power plants and electric vehicles (EV), converters, etc.

Figure 59 shows a perspective view of a power module implementation according to aspects of the present disclosure.

In particular, Figure 59 shows an inverter 990 that can be implemented as a three-phase inverter. In terms of aspect, inverter 990 may be comprised of two individual three-phase inverters, one three-phase inverter, one full bridge, one half bridge, etc. In one aspect, inverter 990 may be comprised of six dedicated half bridges. In one aspect, the above-mentioned configuration may be configured and arranged with connections external to the inverter 990. In one aspect, the above-mentioned configurations may include different versions of power module 100 and/or other assembly components. However, the various features described herein with respect to Figure 59 may be implemented in any of the applications described herein. With further reference to Figure 59, inverter 990 has a phase output 930, sensor 980, capacitor 102, cold plate 902, fluid connections 3516, PCB ( 936), bus bar 900, etc.

In one aspect, phase output 930 may be stamped, laser cut, etc. In one aspect, phase output 930 may be formed of a metal, which may include copper, which may be copper, and/or other metals. In one aspect, phase output 930 may include a bend for size optimization. In one aspect, phase output 930 may include an L-shaped bend for size optimization. In one aspect, phase output 930 may include a 90° bend for size optimization. In one aspect, phase output 930 may include threaded holes for enclosure mounting, strain relief, etc.

In one aspect, sensor 980 may include current sensing for each output terminal of phase output 930. In one aspect, sensor 980 may be configured to operate with a closed loop system for processing signal quality, etc. In another aspect, inverter 990 can operate open loop for reduced cost and size.

In one aspect, PCB 936 may be implemented for signal conditioning. In one aspect, PCB 936 may be implemented for interconnection. In one aspect, PCB 936 may be implemented for signal conditioning and interconnection.

In one aspect, capacitor 102 may be constructed as a rectangular block to allow better use of space. In one aspect, capacitor 102 may be configured with an integrated bus bar 900 to connect power module 100 to capacitor 102 as described herein. In one aspect, capacitor 102 may be a polypropylene film capacitor.

Figure 60 shows a perspective view of a power module implementation according to Figure 59;

60 further shows inverter 990 with multiple housing components 992. In one aspect, multiple housing components 992 include sheet metal portions, vents 984, powder coating, a solid front and welded edges for EMI, a snap in cover 988, a composite material portion, and a plastic material. It may include portions, handles 986, ground portions, standoffs, cooling port openings, embossed terminal markings, windows for displaying components such as controllers, etc.

In one aspect, snap-in cover 988 may include a synthetic material, such as plastic. In one aspect, snap-in cover 988 may be molded. In one aspect, snap-in cover 988 may include a captive fastener portion for easy connection. For example, snap-in cover 988 may include a captive hex nut for easy connection. In one aspect, inverter 990 may include various permutations and/or configurations of phase output 930 and snap-in cover 988, which may be built into inverter 990.

Figure 61 shows a graph plotting junction temperature versus output current for two different power modules.

Referring to Figure 61, two versions of the power module were tested. The first version of the power module was implemented as a 1200 V half-bridge power module with a maximum case temperature rating of 125 degrees Celsius. The power module had a drain-to-source on-state resistance of 4.6 mΩ (milliohms) at a maximum junction temperature of 175°C. The power module is implemented with a flat copper base plate mounting surface.

A second version of the power module uses the same power device 302 and direct cooling with fin fins 642 arranged on the base plate 602 as disclosed herein with reference to FIGS. 43-58 and the associated description. A copper pin pin base plate was implemented.

The flat base plate version of the power module required the application of thermal interface material (TIM) between the power module and the heat sink or cold plate to fill any voids in the thermal path. The effect of this TIM was to provide additional thermal impedance between the power module case and the cold plate. Directly cooled power modules include pin fins 642 as disclosed herein with reference to FIGS. 43-58 and the associated description and are designed to be in direct contact with coolant, which negates the need for a TIM.

Results demonstrate a reduction in thermal impedance when using a directly cooled power module as disclosed herein with reference to FIGS. 43-58 and the associated description compared to a flat base plate power module. For the flat base plate version of the power module, tests were performed using a custom micro-strained liquid-cooled cold plate with a coolant temperature of 25°C and a high-performance TIM. Maximum power loss was measured at 750 W per switch position.

For the directly cooled version of the power module as disclosed herein with reference to FIGS. 43-58 and the associated description, a mechanical cavity is used in which a cold plate 902 and a base plate 602 with internal coolant channels are seated. A test was performed, allowing coolant to pass through the fin pins 642 and the gasket seal to prevent leakage. Maximum power loss was measured at 1000 W per switch position. In both tests, junction temperature was monitored using thermal cameras and virtual junction technology.

To demonstrate the performance benefits of the directly cooled power module 100 at a system level as disclosed herein with reference to FIGS. 43-58 and the associated description, the power module was installed in a three-phase inverter and tested under application conditions. An 800 V DC bus, a switching frequency of 20 kHz, a three-phase load and a constant coolant temperature of 25°C were used.

After applying the DC bus voltage to the inverter, the output current of the inverter gradually increased while monitoring the temperature sensor built into the power module. Temperature sensor measurements were correlated to junction temperature by testing a specially configured power module without a cover to allow thermal imaging of the power device.

As shown in FIG. 61 , the flat base plate version of the power module implemented in an inverter was found to handle up to 410 ARMS (amperes minus root mean square), while the direct cooled version of the power module 100 of the present disclosure was found to handle It was found to handle 490 A _RMS . Accordingly, the power module 100 implementing pin pin 642 according to FIGS. 43-58 and the associated description responded to a 20% increase in output current capability.

The power module 100 associated with FIGS. 43-58 may be implemented with different voltages, temperature ratings, on-state resistances, different maximum junction temperatures, different coolant temperatures, different switching frequencies, etc., and may likewise be implemented as non-direct cooled. ) It should be noted that it increases the output current capacity compared to the power module. In this regard, the output current capability is 5% - 40%, 5% - 10%, 10% - 15%, 15% - 20%, 20% - 25%, 25% - compared to non-directly cooled power modules. It can be increased by 30%, 30% - 35%, 35% - 40%, 10% - 30%, 20% - 40%, 15% - 35% or 15% - 40%. In this regard, the output current capability can be increased by at least 5%, 10%, 15%, 20%, 25%, 30%, 35% or 40% compared to non-directly cooled power modules. Moreover, numerous other improvements in performance are contemplated by the power module 100 associated with FIGS. 43-58 implemented as described herein.

In one or more aspects of the present disclosure, power module 100 may be implemented as a high-performance, compact, modular three-phase inverter based on the disclosed power module 100, specifically optimized to fully utilize silicon carbide (SiC) MOSFETs. You can. In some aspects, modular AC output can allow the inverter to be configured as a dual inverter or a single inverter. In some aspects, double-sided cold plates, custom capacitors and directly cooled SiC modules could enable ultra-high power densities for inverters. The parasitics of the power module 100 and all critical components, including capacitors, have been verified to ensure the lowest overall stray inductance. In some aspects, the unit can operate in application conditions using an 800 V DC bus and 480 V/830 A phase current.

In this regard, conventional power packages are an effective and widely accepted industrial solution for state-of-the-art silicon (Si) IGBTs. However, conventional power packages struggle to take full advantage of what SiC-based technology has to offer. Conventional power package footprints and internal layouts were originally designed for Si devices with a single or a few parallel, large devices with signal networks typically following long paths. The bipolar nature of IGBTs limits the switching speed so that the mentioned design compromises are acceptable.

To fully utilize the high-performance properties of SiC devices, a technology-driven design was applied with the disclosed power module 100. The power module 100 of the present disclosure overcomes the shortcomings of existing module designs. In this regard, the SiC-centric design of the present disclosure makes it possible to arrange multiple smaller dies in parallel to share dynamic currents evenly and optimize the signal network with short-path parallel planes such that the SiC dies switch uniformly even at high speeds. do.

To meet these needs, the disclosed power module 100 has been highly optimized to achieve maximum performance among all sizes of commercially available 650-1700 V SiC MOSFETs. Some aspects of the disclosed power module 100 provide the ability to carry high currents (300 to >600 A) in a small footprint (53 mm x 80 mm) with a terminal arrangement that allows straight busing and interconnection. The low inductance, uniformly matched layout of the disclosed power module 100 results in high quality switching events, minimizing vibrations inside and outside the power module 100. In some implementations, the disclosed power module 100 may have a stray inductance of -6.7 nH and is only -60% of the 62 mm module area. The disclosed current loops of power module 100 are designed so that they are wide, low profile, and evenly distributed between devices so that they have equivalent impedance across switch positions. The power terminals can be vertically offset so that the bus bars between the DC link capacitors and the power module 100 can be stacked up to the power module 100 without the need for bending, coining, standoffs, or complex insulation. . Ultimately, this achieves low inductance across the entire power loop from the DC link capacitors and SiC devices.

Due to the high current density of SiC power devices, the thermal performance of the power module 100 and cold plate can allow for maximizing heat flux and reducing system size and cost. The disclosed direct cooled power module can implement a copper finned base plate that improves the thermal performance of existing flat base plate power modules. Flat base plate power modules require thermal interface material (TIM) to be applied between the module and a heat sink or cold plate to fill the voids in the thermal path. The effect of this TIM is additional thermal impedance between the module case and the cold plate. Directly cooled power module 100 has pins designed to make direct contact with the coolant, negating the need for a TIM. As shown in FIG. 61, the flat base plate version of the power module can handle up to 410 A _RMS , while the direct cooled version of power module 100 can handle 490 A _RMS . This corresponds to a 20% increase in output current capability.

In some aspects, the disclosed power module 100 can be implemented in an inverter design that adds multiple power modules 100 using the unique double-sided cooling and the same low-parasitic, high-performance design. In one aspect, a double-sided cold plate featuring cooling surfaces on the top and bottom surfaces allowing twice as many power modules 100 in the same footprint area may be utilized, which can be used in the directly cooled power modules 100 of the present disclosure. ), the power density is more than doubled compared to prior art implementations. In some aspects, custom DC-link capacitors can be implemented as integrated stacked terminals as disclosed herein that are mounted directly on both the top and bottom banks of a power module. This design has low stray inductance between the power module 100 and the capacitor and does not require a separate bus bar. The non-planar power module 100 of the present disclosure can reduce cost and maximize overlap by preventing the capacitor terminal assembly from bending. The DC input terminals are built on capacitors, creating a tightly integrated solution for interconnecting six half-bridge modules.

In some aspects, the disclosed power module 100 may be supported by a gate driver with high noise immunity and high-speed protection to effectively switch the device and provide maximum survivability under fault conditions.

In some aspects, the AC output terminals may be designed and implemented as modular subassemblies. This allows the inverter to be configured as a dual three-phase inverter with an output current greater than 430 ARMS and six or more current sensors, or as a single three-phase inverter with an output current greater than 860 ARMS and three or more current sensors.

The disclosed double-sided cold plate assembly can be implemented with a directly cooled power module 100 as described herein mounted on the top and bottom sides using gasket seals and an inverter with sensors, modules, cold plates, and capacitors.

To verify the high-performance properties of the system, the components were evaluated in both frequency and time domains. In some aspects, small-signal parasitic extraction allows accurate measurement of parasitic elements that can be exploited in an iterative design process to minimize stray inductance. The quality of the switching waveforms for both overshoot voltage and ringing was verified through double pulse testing of the modules and DC link capacitors at 800 V and 600 A per power module. In some aspects, DC-link capacitor designs can be implemented with optimal terminal spacing and arrangement to balance current density and minimize stray inductance.

Accordingly, the present disclosure discloses an improved power module 100 and related systems configured to handle heat and increase output current capability compared to non-directly cooled power modules. Additionally, the disclosed power module 100 may be implemented in various topologies including a half-bridge configuration, a full-bridge configuration, a common source configuration, a common drain configuration, a neutral point clamp configuration, and a three-phase configuration. Applications of the power module 100 include power systems, motor systems, automobile motor systems, charging systems, automobile charging systems, vehicle systems, industrial motor drives, embedded motor drives, uninterruptible power supplies, AC-DC power supplies, and welder power supplies. These can include power supplies, military systems, inverters, inverters for wind turbines, solar power panels, tidal power plants and electric vehicles (EV), converters, etc.

Accordingly, the present disclosure also provides an improved power module 100 and related devices configured to handle parasitic impedances, such as loop inductance, to increase reliability, reduce switching losses, reduce EMI, and limit stress on system components. The system was launched. In particular, the disclosed power module has the ability with the disclosed arrangement to reduce inductance by as much as 10% in some respects. Additionally, the disclosed power module 100 may be implemented in various topologies, including a half-bridge configuration, a full-bridge configuration, a common source configuration, a common drain configuration, a neutral point clamp configuration, and a three-phase configuration. Applications of the power module 100 include motor drives, solar inverters, circuit breakers, protection circuits, DC-DC converters, etc.

Power module 100 of the present disclosure is adaptable to most systems within the power handling needs and size and weight constraints specific to a given application. The power module design and system level architecture described in this disclosure allows high levels of power density and volumetric utilization to be achieved.

Aspects of the present disclosure have been described above with reference to the accompanying drawings in which aspects of the present disclosure are illustrated. However, it will be understood that the present disclosure may be embodied in many different forms and should not be construed as limited to the aspects described above. Rather, these aspects are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. Additionally, the various aspects described may be implemented separately. Moreover, one or more of the various aspects described may be combined. Like numbers refer to the same element throughout.

Although the terms first, second, etc. are used throughout this specification to describe various elements, it will be understood that such elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of the present disclosure, a first element may be referred to as a second element, and similarly, the second element may be referred to as a first element. The term “and/or” includes any and all combinations of one or more associated listed items.

The terminology used herein is for the purpose of describing particular aspects only and is not intended to limit the disclosure. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms unless the context clearly dictates otherwise. The terms “comprise,” “comprising,” “include,” and/or “including,” when used herein, refer to specified features, integers, steps, operations, elements, and elements. It will be further understood that/or specifies the presence of a component, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and/or groups thereof.

When an element, such as a layer, region or substrate, is referred to as being "on" or extending "onto" another element, it may be extending directly on or over the other element, or the intervening element may also be It will be understood that it can exist. In contrast, when an element is referred to as being “directly on” or extending “directly onto” another element, no intervening element is present. It will also be understood that when an element is referred to as being “connected” or “coupled” to another element, it may be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, no intervening elements are present.

Relative terms such as “below” or “above” or “top” or “lower” or “top” or “bottom” refer to the relationship of one element, layer or area to another element, layer or area as shown in the drawing. Can be used here to explain. It will be understood that these terms are intended to encompass other orientations of the device in addition to those shown in the figures.

Aspects of the disclosure are described herein with reference to cross-sectional diagrams, which are schematic diagrams of idealized embodiments (and intermediate structures) of the disclosure. The thickness of layers and regions in the drawings may be exaggerated for clarity. Additionally, the shapes shown may vary, for example as a result of manufacturing techniques and/or tolerances.

In the drawings and specification, exemplary aspects of the disclosure are disclosed, and although specific terms are used, they are used in a general and descriptive sense only and are not intended to be limiting, and the scope of the disclosure is set forth in the following claims.

Aspects of the present disclosure include, for example, any device with wired or wireless communication capabilities over a communication channel, such as a desktop computer, personal computer, laptop/mobile computer, personal data assistant (PDA), mobile phone, tablet computer, cloud computing device, etc. It can be implemented on a tangible computing device.

Additionally, according to various aspects of the present disclosure, methods described herein may be used in PCs, PDAs, semiconductors, application specific integrated circuits (ASICs), programmable logic arrays, cloud computing devices, and methods described herein. It is intended to operate as a dedicated hardware implementation, including but not limited to other hardware devices configured to implement.

Additionally, software implementations of the present disclosure as described herein may be implemented on a magnetic medium such as a disk or tape, a magneto-optical or optical medium such as a disk, or one or more read-only (non-volatile) memory, random access memory, or other rewritable memory. It should be noted that it is optionally stored on a type of storage medium, such as a solid-state medium such as a memory card or other package that accommodates (volatile) memory. Digital file attachments to email or other self-contained information archives or sets of archives are considered distribution media equivalent to tangible storage media. Accordingly, this disclosure is considered to include any tangible storage or distribution medium, including technically recognized equivalents and successor media, listed herein and on which the software implementations herein are stored.

Additionally, various aspects of the present disclosure may be implemented in non-generic computer implementations. Moreover, various aspects of the disclosure described herein improve the functionality of the system as will be apparent from the disclosure of the disclosure. Additionally, various aspects of the present disclosure include computer hardware specifically programmed to solve the complex problems addressed by the present disclosure. Accordingly, various aspects of the present disclosure improve the functionality of the overall system in a particular implementation to perform the processes as set forth by the disclosure and defined by the claims.

Although the disclosure has been described in terms of example aspects, those skilled in the art will recognize that the disclosure may be practiced with modification within the spirit and scope of the appended claims. These examples given above are illustrative only and are not meant to be an exhaustive list of all possible designs, aspects, applications or modifications of the present disclosure. In this regard, various aspects, features, components, elements, modules, arrangements, circuits, etc. are considered interchangeable, mixed, matched, combined, etc. In this regard, the different features of the present disclosure are modular and can be mixed and matched with each other.

Claims (133)

As a power module,
at least one power board;
a housing arranged on the at least one power board;
a first terminal electrically connected to the at least one power board;
second terminal;
a third terminal electrically connected to the at least one power board;
a plurality of power devices electrically connected to the at least one power board;
a gate-source board electrically connected to the plurality of power devices; and
A temperature sensor arranged within the housing and electrically connected to the gate-source board.
wherein the arrangement of the temperature sensors on the at least one power substrate is configured to isolate the temperature sensors. According to paragraph 1,
wherein the at least one power substrate includes a metal surface and/or a conductive surface supporting the plurality of power devices,
wherein the at least one power substrate includes a portion not comprising the metal surface and/or the conductive surface,
wherein the temperature sensor is on a portion of the at least one power substrate that does not include the metal surface and/or the conductive surface. According to paragraph 1,
The gate-source board further includes a plurality of resistors, each of the plurality of resistors is electrically connected to one of the plurality of power devices, and the gate-source board is configured to receive at least one electrical signal. , power module. According to paragraph 3,
wherein each of the plurality of resistors is electrically connected to a gate of one of the plurality of power devices. According to paragraph 3,
wherein each of the plurality of resistors is electrically connected to a source of one of the plurality of power devices. According to paragraph 3,
The power module, wherein the at least one electrical signal includes a gate driver signal. According to paragraph 3,
The power module of claim 1, wherein the at least one electrical signal comprises a source Kelvin signal. According to paragraph 1,
the first terminal includes a contact surface positioned above the housing at a first height,
and the second terminal includes a contact surface positioned above the housing at a second height different from the first height. A structure comprising the power module of claim 1,
At least one component including at least one of at least one bus bar, driver, controller, at least one capacitor, cold plate, and at least one sensor; and
A component housing configured to receive and surround the power module and the at least one component. According to clause 9,
The configuration further comprising an electrical interface coupled to at least one of the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor and configured to exchange data. According to clause 9,
The construct is configured to test an implementation of a power module for a particular application. According to clause 9,
The component further comprising a cooling fan configured to move air through the component housing. According to paragraph 1,
A power module, wherein the total stray inductance value of the critical power switching loop of the power module ranges from 12 (nH) to 2 (nH). As a power module,
at least one power board;
a housing arranged on the at least one power board;
a first terminal electrically connected to the at least one power board;
second terminal;
a third terminal electrically connected to the at least one power board;
a plurality of power devices electrically connected to the at least one power board;
a gate-source board configured to receive at least one electrical signal,
The gate-source board further includes a plurality of ballasting source Kelvin resistors, each of the plurality of ballasting source Kelvin resistors is electrically connected to one of the plurality of power devices, and the plurality of ballasting source Kelvin resistors are electrically connected to one of the plurality of power devices. A power module, each of which is configured to isolate the source Kelvin connection of the plurality of power devices. According to clause 14,
A power module further comprising a plurality of resistors electrically connected to a gate of one of the plurality of power devices. According to clause 14,
wherein each of the plurality of ballasting source Kelvin resistors is electrically connected to a source of one of the plurality of power devices. According to clause 14,
The power module, wherein the at least one electrical signal includes a gate driver signal. According to clause 14,
The power module of claim 1, wherein the at least one electrical signal comprises a source Kelvin signal. According to clause 14,
The power module further comprising a temperature sensor arranged within the housing and electrically connected to the gate-source board. According to clause 19,
wherein the at least one power substrate includes a metal surface and/or a conductive surface supporting the plurality of power devices,
wherein the at least one power substrate includes a portion not comprising the metal surface and/or the conductive surface,
wherein the temperature sensor is on a portion of the at least one power substrate that does not include the metal surface and/or the conductive surface. According to clause 14,
the first terminal includes a contact surface positioned above the housing at a first height,
and the second terminal includes a contact surface positioned above the housing at a second height different from the first height. A structure comprising the power module of claim 14,
at least one component including at least one of at least one bus bar, driver, controller, at least one capacitor, cold plate, and at least one sensor; and
A component housing configured to receive and surround the power module and the at least one component. According to clause 22,
The configuration further comprising an electrical interface coupled to at least one of the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor and configured to exchange data. According to clause 22,
The construct is configured to test an implementation of a power module for a particular application. According to clause 22,
The component further comprising a cooling fan configured to move air through the component housing. According to clause 14,
A power module, wherein the total stray inductance value of the critical power switching loop of the power module ranges from 12 (nH) to 2 (nH). A test construct configured to test the power module according to claim 1, comprising:
A power module assembly including the power module, wherein the power module assembly further includes at least one component including at least one of at least one bus bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor. Ham -;
a component housing configured to receive and surround the power module and the at least one component;
the power module configuration is configured to operate the power module and the at least one component,
the power module component is configured to measure at least one operating parameter of the power module component,
wherein the power module component is configured to output the at least one operating parameter from the power module component. According to clause 27,
The power module is,
at least one power board;
a housing arranged on the at least one power board;
a first terminal electrically connected to the at least one power board;
second terminal; and
a third terminal electrically connected to the at least one power board; and
A plurality of power devices electrically connected to the at least one power board
Contains at least one of
the power module is structured, arranged and configured to increase the switching speed of the power module,
A test configuration wherein the switching speed of the power module is less than 100 (A/ns). According to clause 28,
A test configuration wherein the switching speed of the power module is less than 80 (V/ns). According to clause 27,
A test construct further comprising an electrical interface coupled to at least one of the driver, the controller, and the at least one sensor and configured to exchange data. According to clause 27,
wherein the power module construct is configured to test an implementation of a power module for a specific application,
The test construct includes at least one of an inverter, a power system, a motor system, and a charging system. According to clause 27,
connected to at least one of the driver, the controller, and the at least one sensor through an electrical interface,
A test construct for testing the implementation of a power module for a specific application with the construct. According to clause 27,
A test construct further comprising a cooling fan configured to move air through the construct housing. As an inverter,
The power module according to claim 1; and
It includes at least one of at least one bus bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor,
The power module is
at least one power board;
a housing arranged on the at least one power board;
a first terminal electrically connected to the at least one power board;
second terminal; and
A plurality of power devices electrically connected to the at least one power board
Contains at least one of
the power module is structured, arranged and configured to increase the switching speed of the power module,
An inverter, wherein the switching speed of the power module is less than 100 (A/ns). According to clause 34,
The inverter wherein the power module further includes a third terminal electrically connected to the at least one power board. According to clause 34,
An inverter, further comprising at least one bus bar, driver and controller. According to clause 36,
An inverter further comprising at least one capacitor, a cold plate, and at least one sensor. According to clause 34,
An inverter, wherein the switching speed of the power module is less than 80 (A/ns). According to clause 34,
An inverter, wherein at least a portion of the first terminal is arranged at a different height than at least a portion of the second terminal. According to clause 34,
An inverter, wherein current flows in a loop through a power module passing through the first terminal, the at least one power board, and the second terminal to reduce inductance. As a power system,
The power module of claim 1; and
A power system, comprising at least one component including at least one of at least one bus bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor. According to clause 41,
A power system, wherein the power system includes at least one of an inverter, a motor system, and a charging system. A test construct configured to test a power module according to claim 14, comprising:
A power module assembly including a single power module, wherein the power module assembly further includes at least one component including at least one of at least one bus bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor. Ham -;
a component housing configured to receive and surround the power module and the at least one component;
the power module configuration is configured to operate the power module and the at least one component,
the power module component is configured to measure at least one operating parameter of the power module component,
wherein the power module component is configured to output the at least one operating parameter from the power module component. According to clause 43,
The power module is,
at least one power board;
a housing arranged on the at least one power board;
a first terminal electrically connected to the at least one power board;
second terminal; and
a third terminal electrically connected to the at least one power board; and
A plurality of power devices electrically connected to the at least one power board
Contains at least one of
the power module is structured, arranged and configured to increase the switching speed of the power module,
A test configuration wherein the switching speed of the power module is less than 100 (A/ns). According to clause 44,
A test configuration wherein the switching speed of the power module is less than 80 (V/ns). According to clause 43,
A test construct further comprising an electrical interface coupled to at least one of the driver, the controller, and the at least one sensor and configured to exchange data. According to clause 43,
wherein the power module construct is configured to test an implementation of a power module for a specific application,
The test construct includes at least one of an inverter, a power system, a motor system, and a charging system. According to clause 43,
connected to at least one of the driver, the controller, and the at least one sensor through an electrical interface,
A test construct for testing the implementation of a power module for a specific application with the construct. According to clause 43,
A test construct further comprising a cooling fan configured to move air through the construct housing. An inverter including the power module of claim 14,
It includes at least one of at least one bus bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor,
The power module is
at least one power board;
a housing arranged on the at least one power board;
a first terminal electrically connected to the at least one power board;
second terminal; and
A plurality of power devices electrically connected to the at least one power board
Contains at least one of
the power module is structured, arranged and configured to increase the switching speed of the power module,
An inverter, wherein the switching speed of the power module is less than 100 (A/ns). According to clause 50,
The inverter wherein the power module further includes a third terminal electrically connected to the at least one power board. According to clause 50,
An inverter, further comprising at least one bus bar, driver and controller. According to clause 52,
An inverter further comprising at least one capacitor, a cold plate, and at least one sensor. According to clause 50,
An inverter, wherein the switching speed of the power module is less than 80 (A/ns). According to clause 50,
An inverter, wherein at least a portion of the first terminal is arranged at a different height than at least a portion of the second terminal. According to clause 50,
An inverter, wherein current flows in a loop through a power module passing through the first terminal, the at least one power board, and the second terminal to reduce inductance. A power system comprising the power module of claim 14,
the power module; and
A power system, comprising at least one component including at least one of at least one bus bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor. According to clause 57,
A power system, wherein the power system includes at least one of an inverter, a motor system, and a charging system. delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete