CN113767563A

CN113767563A - High power multilayer module with low inductance and fast switching for parallel power devices

Info

Publication number: CN113767563A
Application number: CN202080020186.0A
Authority: CN
Inventors: 马托伊斯·富尔塔多; 布赖斯·麦克弗森; 丹尼尔·马丁; 亚历山大·洛斯特尔
Original assignee: Wofu Semiconductor Co ltd
Current assignee: Wofu Semiconductor Co ltd
Priority date: 2019-01-10
Filing date: 2020-01-03
Publication date: 2021-12-07
Also published as: EP3909124A1; BR112021013650A8; JP2022508473A; JP2023029342A; KR20230125332A; KR20210136987A; WO2020146204A1; EP3909124A4; KR102580635B1; CN118573033A; BR112021013650A2

Abstract

A power module, comprising: at least one substrate; a housing disposed on at least one power substrate; a first terminal electrically connected to at least one power substrate; a second terminal comprising a contact surface; a third terminal electrically connected to the at least one power substrate; a plurality of power devices disposed on and connected to the at least one power substrate, and a third terminal electrically connected to at least one of the plurality of power devices. The power module further includes a base plate and a plurality of pin fins disposed on the base plate, and the plurality of pin fins are configured to provide direct cooling for the power module.

Description

High power multilayer module with low inductance and fast switching for parallel power devices

Cross reference to prior application

Priority of U.S. patent application No. 16/658,630, filed on 21/10/2019, the entire contents of which are incorporated herein by reference for all purposes as if fully set forth herein; this application further claims priority from us patent application No. 16/266,771 filed on 4.2.2019, which is incorporated by reference in its entirety for all purposes as if fully set forth herein; this application further claims priority from U.S. provisional application No. 62/790,965 filed on 10.1.2019, which is incorporated by reference in its entirety for all purposes as if fully set forth herein; and this application further claims priority from U.S. provisional application No. 62/914,847 filed on 14.10.2019, which is incorporated by reference in its entirety for all purposes as if fully set forth herein.

Technical Field

The present disclosure relates to high power multilayer modules with low inductance and fast switching for parallel power devices. Further, the present disclosure relates to processes for configuring high power multilayer modules with low inductance and fast switching for parallel power devices.

Background

As will be appreciated by those skilled in the art, power modules are known in various forms. The power module provides physical protection for the power components (typically power semiconductor devices). These power semiconductors are typically soldered or sintered on a power electronic substrate. Power modules typically carry power semiconductors, provide electrical and thermal contact, and include electrical insulation.

The current trend of electrification places increasing demands on power modules including power semiconductor devices, power electronics devices, etc. associated with the power modules, such as improved efficiency and higher power density. These requirements extend from system level to component level. However, operation of power modules to meet these requirements results in increased heat generation within the power modules. The increased heat generation limits the ability of the power module to operate due to physical limitations of the power semiconductor devices, power electronics devices, and the like. In particular, various components of power modules including power semiconductor devices, power electronics devices, and the like typically have operating temperature limitations.

Furthermore, parasitic impedances in the power module limit the practical implementation of these devices in the prior art. In particular, the loop inductance during a switching event may cause voltage overshoot and ringing. This reduces stability, increases switching losses, generates electromagnetic interference (EMI), and stresses system components. Ultimately, these factors may limit the maximum switching frequency, which is desirable to reduce the size of external filters in power conversion systems.

Therefore, there is a need for a power module configured to address the generation of additional heat.

Further, there is a need for a power module configured to address parasitic impedances (such as loop inductance) to increase stability, reduce switching losses, reduce EMI, and/or limit stress on system components.

Disclosure of Invention

One general aspect includes a power module comprising: at least one conductive power substrate; a housing disposed on at least one electrically conductive power substrate; a first terminal electrically connected to at least one conductive power substrate, the first terminal including a contact surface on the housing; a second terminal comprising a contact surface on the housing; a third terminal electrically connected to the at least one conductive power substrate; a plurality of power devices disposed on and connected to the at least one conductive power substrate, the third terminal being electrically connected to at least one of the plurality of power devices; a base plate; and a plurality of pin fins (pin fins) disposed on the base plate, and configured to provide direct cooling for the power module.

One general aspect includes a power module comprising: a base plate; at least one power substrate; a housing disposed on at least one power substrate; a first terminal electrically connected to at least one power substrate; a second terminal; a third terminal electrically connected to the at least one power substrate; a plurality of power devices electrically connected to at least one power substrate; a gate-source plate electrically connected to the plurality of power devices; and a plurality of pin fins disposed on the base plate and configured to provide direct cooling for the power module.

One general aspect includes a process of configuring a power module, comprising: arranging at least one power substrate; disposing a housing on at least one power substrate; connecting a first terminal to at least one power substrate; providing a second terminal; electrically connecting the third terminal to at least one power substrate; connecting a plurality of power devices to at least one power substrate; mounting a gate-source plate electrically connected to a plurality of power devices, the gate-source plate configured to receive at least one electrical signal; providing a plurality of pin fins disposed on a base plate; and a plurality of pin fins are configured to cool at least one component of the power module.

Additional features, advantages, and aspects of the disclosure may be set forth or apparent from consideration of the following detailed description, drawings, and claims. Furthermore, it is to be understood that both the foregoing general description and the following detailed description of the present disclosure are exemplary and intended to provide further explanation without limiting the scope of the disclosure as claimed.

Drawings

The accompanying drawings, which are included to provide a further understanding of the disclosure, are incorporated in and constitute a part of this specification, illustrate aspects of the disclosure and together with the detailed description serve to explain the principles of the disclosure. No attempt is made to show structural details of the disclosure in more detail than is necessary for a fundamental understanding of the disclosure and the various ways in which it may be practiced. In the drawings:

fig. 1A schematically illustrates a half-bridge based topology of a power module according to aspects of the present disclosure.

Fig. 1B shows the current loop between the DC link capacitor and the switch position inside the power module of fig. 1A.

Fig. 2 illustrates various interconnects and associated impedances in accordance with aspects of the present disclosure.

Fig. 3 illustrates various interconnections and associated impedances of switch positions in accordance with aspects of the present disclosure.

Fig. 4A illustrates a perspective schematic view of a power module according to one aspect of the present disclosure.

Fig. 4B illustrates a top view schematic diagram of a power module in accordance with an aspect of the present disclosure.

Fig. 5 shows a plurality of single-phase modules in a parallel configuration in accordance with aspects of the present disclosure.

Fig. 6A illustrates a first power module configuration according to aspects of the present disclosure.

Fig. 6B illustrates a second power module configuration according to aspects of the present disclosure.

Fig. 7 shows a plurality of power modules in a full-bridge configuration, in accordance with aspects of the present disclosure.

Fig. 8 illustrates a plurality of power modules in a three-phase configuration, according to aspects of the present disclosure.

Fig. 9 shows a single power module having a full-bridge configuration, in accordance with aspects of the present disclosure.

Fig. 10 shows an exploded view of a power module according to aspects of the present disclosure.

Fig. 11 shows a partial view of the power module of fig. 10.

Fig. 12A shows a top view of a phase leg of a power module constructed in accordance with the present disclosure, wherein each node is identified in a half-bridge topology.

Fig. 12B shows a schematic diagram of a phase leg of a power module constructed in accordance with the present disclosure, wherein each node is identified in a half-bridge topology in accordance with fig. 12A.

Fig. 13 shows a cross-sectional view of the phase leg of fig. 12A and 12B.

Fig. 14 shows a cross-sectional view of the phase leg of fig. 12A and 12B including a current path.

Fig. 15 illustrates a contact surface of a power module with a bus bar (busting), according to an aspect of the present disclosure.

Fig. 16A, 16B, and 16C illustrate various aspects of a terminal of a power module according to aspects of the present disclosure.

Fig. 17 schematically illustrates a plurality of devices connected in parallel, according to aspects of the present disclosure.

Fig. 18 illustrates a perspective view of an active gate switch loop in accordance with an aspect of the present disclosure.

Fig. 19 illustrates a top view of an active gate switch loop in accordance with an aspect of the present disclosure.

Fig. 20 illustrates a partial example implementation including a power module according to aspects of the present disclosure.

Fig. 21 illustrates an exemplary laminated bus bar according to the present disclosure.

Fig. 22 shows a portion of the exemplary laminated bus bar according to fig. 21.

Fig. 23 shows another portion of the exemplary laminated bus bar according to fig. 21.

Fig. 24 shows a phase output bus bar according to the present disclosure.

Fig. 25 illustrates a perspective view of an exemplary implementation including a power module and a laminated bus bar according to aspects of the present disclosure.

Fig. 26 shows a first cross-sectional view of an exemplary implementation including a power module and a laminated bus bar according to fig. 25.

Fig. 27 illustrates a second cross-sectional view of an exemplary implementation including a power module and a laminated bus bar according to fig. 25.

Fig. 28 and 29 illustrate an exemplary single module gate driver according to the present disclosure.

Fig. 30 shows a current sensing assembly according to aspects of the present disclosure.

Fig. 31 shows a current sensing assembly arranged with phase output bus bars according to fig. 30.

FIG. 32 illustrates an example three-phase motor drive power according to an aspect of the present disclosure.

Fig. 33 schematically illustrates a plurality of power devices connected in parallel, according to aspects of the present disclosure.

Fig. 34 illustrates a top view of an active gate switch loop and power module in accordance with an aspect of the present disclosure.

Fig. 35 illustrates a perspective view of a configuration including a power module and a housing according to one aspect of the present disclosure.

Fig. 36 shows a side view of the arrangement of fig. 35.

Fig. 37 shows a partial perspective view of the arrangement of fig. 35.

Fig. 38 shows another partial perspective view of the arrangement of fig. 35.

Fig. 39 shows another partial perspective view of the arrangement of fig. 35.

Fig. 40 shows another partial perspective view of the arrangement of fig. 35.

Fig. 41 shows another partial perspective view of the arrangement of fig. 35.

FIG. 42 illustrates a process to implement and operate a configuration including a power module.

Fig. 43 illustrates a perspective bottom side view of a power module according to one aspect of the present disclosure.

Fig. 44 shows a side view of the power module according to fig. 43.

Fig. 45 shows a bottom side view of the power module according to fig. 43.

Fig. 46 shows a partial perspective bottom side view of the power module according to fig. 43.

Fig. 47 illustrates a perspective bottom side view of a power module according to an aspect of the present disclosure.

Fig. 48 shows a side view of the power module according to fig. 47.

Fig. 49 shows a bottom side view of the power module according to fig. 47.

Fig. 50 shows a partial perspective bottom side view of the power module according to fig. 47.

Fig. 51 illustrates a perspective bottom side view of a power module according to an aspect of the present disclosure.

Fig. 52 shows a side view of the power module according to fig. 51.

Fig. 53 shows a bottom side view of the power module according to fig. 51.

Fig. 54 shows a partial perspective bottom side view of the power module according to fig. 51.

Fig. 55 illustrates a perspective bottom side view of a power module according to an aspect of the present disclosure.

Fig. 56 shows a side view of the power module according to fig. 55.

Fig. 57 shows a bottom side view of the power module according to fig. 55.

Fig. 58 illustrates a perspective view of a power module implementation according to one aspect of the present disclosure.

Fig. 59 illustrates a perspective view of a power module implementation according to one aspect of the present disclosure.

Fig. 60 shows a perspective view of a power module implementation according to fig. 59.

Fig. 61 shows a graph of junction temperature versus output current for two different power modules.

Detailed Description

The aspects of the present disclosure and the various features and advantageous details thereof are explained more fully with reference to the non-limiting aspects and examples that are described and/or illustrated in the accompanying drawings and detailed in the following description. It should be noted that the features illustrated in the drawings are not necessarily drawn to scale and features of one aspect may be employed with other aspects as will be appreciated by those skilled in the art, even if not explicitly stated herein. Descriptions of well-known components and processing techniques may be omitted so as to not unnecessarily obscure aspects of the disclosure. The examples used herein are intended merely to facilitate an understanding of ways in which the disclosure may be practiced and to further enable those of skill in the art to practice various aspects of the disclosure. Accordingly, the examples and aspects herein should not be construed as limiting the scope of the disclosure, which is defined solely by the appended claims and applicable law. Further, it should be noted that like reference numerals represent similar parts throughout the several views of the drawings.

The present disclosure describes a power module that may include structures optimized for prior art wide bandgap power semiconductor devices, such as gallium nitride (GaN), silicon carbide (SiC), etc., that are capable of carrying large amounts of current and voltage and switch at increasingly faster speeds compared to the prior art. Conventional power electronics packages are limited in their functionality by having an internal layout intended for silicon (Si) device technology.

The disclosed power module may be configured to distribute current evenly among a large array of parallel devices with significantly lower loop inductance than standard packaging approaches. The multi-stage current path with trapezoidal power terminals simplifies the external connection to the bus system, thereby reducing the inductance between the power module and the filter capacitor. The layout of the power module is highly configurable and can be configured to employ most power circuit topologies common in the power electronics industry.

The disclosed power module provides significant improvements in internal module performance, system level implementation, manufacturability, and ease of use by adding tighter power loops and logic external terminal arrangements.

In this regard, the disclosed power module may be configured to provide at least one or more of:

a highly optimized low inductance power module structure;

modular, scalable, and flexible layout and power flow;

equalizing a number of power semiconductors in parallel to form a high current switch position;

an optimized gate and sense signal structure for connecting a number of power semiconductors in parallel;

a sensing connector for temperature sensing and overcurrent protection;

a form factor suitable for high voltage operation up to about 1700V (volts) or higher;

scalable height beyond 1700V operation;

a multi-layer internal conductor layout for optimized external system interconnection;

modular internal structures designed to accommodate various prior art materials, attachment, isolation and interconnection techniques;

highly optimized for high performance system level integration;

easy to connect in parallel, facilitating direct amplification to higher currents;

various power topologies can be configured, including half-bridge, full-bridge, three-phase, booster, chopper, etc. arrangements;

the system implementation may be scaled to meet various power processing requirements.

In essence, the disclosed power module configuration may allow for the full utilization of the capabilities of advanced power semiconductors, providing significant improvements in power density, switching, efficiency, and the like.

The power devices of power modules range in structure and use. The term "power device" refers to various forms of transistors and diodes designed for high voltage and high current. The transistor may be a controllable switch (depending on the device type) that allows unidirectional or bidirectional current flow, while the diode may allow current to flow in one direction and may be uncontrollable. Transistor types may include, but are not limited to, metal oxide field effect transistors (MOSFETs), Junction Field Effect Transistors (JFETs), Bipolar Junction Transistors (BJTs), Insulated Gate Bipolar Transistors (IGBTs), and the like.

The power device may include a Wide Bandgap (WBG) semiconductor including gallium nitride (GaN), silicon carbide (SiC), etc., and provides many advantages over conventional silicon (Si) as a material of the power device. However, various aspects of the present disclosure may utilize silicon-type power devices and achieve many of the advantages described herein. Key metrics for WBG semiconductors may include one or more of the following non-limiting aspects:

higher voltage blocking;

higher current density;

higher temperature operation;

faster switching;

improved thermal performance;

lower on-resistance (reduced conduction losses).

Lower turn-on and turn-off energy (reduced switching losses). It should be understood that these above-described critical metrics of WBG semiconductors are not required and may not be achievable in certain aspects of the present disclosure.

In order to effectively utilize the WBG semiconductor device, a power module (also referred to as a power package) is employed. The power module may provide a variety of functions, including one or more of the following non-limiting aspects:

electrical interconnection of power semiconductor devices to a useful topology;

protecting sensitive devices from moisture, vibration, contamination, etc.;

creating an effective and efficient means for removing waste heat generated from the device due to conduction and switching losses;

system-level implementation is facilitated by robust power and signal electrical connections to internal layouts. The power and signal electric connection can be realized by bolt connection, crimping, welding, a plug, a socket and the like;

voltage safety is provided by internal dielectric encapsulation and external voltage creepage and clearance distances according to industry adopted standards.

It should be understood that these above-described functions are not required and may not be possible to implement in certain aspects of the present disclosure.

Fig. 1A schematically illustrates a half-bridge based topology of a power module according to aspects of the present disclosure. Half-bridge based topologies are a basic building block in many switching power converters. For motor drives, inverters, and DC-DC converters, these topologies are typically connected to a DC power source 112, with a set of DC link capacitors 102 as an intermediate connection between the DC power source 112. This is schematically illustrated in fig. 1A. The DC link capacitor 102 may be used to filter the ripple on the line and counteract the effect of inductance in the current path. Two parallel half-bridges may form a full bridge and three parallel half-bridges may form a three-phase topology. The three-phase topology is also commonly referred to as six groups, representing six switch positions in a three-phase branch. In addition, other topologies for power modules are contemplated, including common source, common drain, and neutral point clamping.

Fig. 1A further illustrates a power module 100 having one or more switch positions 104. The power module 100 may include a first terminal 106, a second terminal 108, and a third terminal 110.

Fig. 1B shows the current loop between the DC link capacitor and the switch position inside the power module of fig. 1A. The current loop 114 between the DC link capacitor 102 and the switch location 104 inside the power module 100 is critical in the system, having a significant impact on the switching performance of the semiconductor.

No system is perfect; for example, there are undesirable parasitic resistances, capacitances and inductances in any electrical system. These impedances introduce adverse effects on performance and reliability unless reduced or mitigated. Although a resistance and capacitance may be associated with each interconnect, the greatest possible impact on the switching power device is parasitic inductance. The higher inductance results in higher stored energy in the magnetic field, which results in voltage overshoot and ringing during switching transitions.

Fig. 2 illustrates various interconnects and associated impedances in accordance with aspects of the present disclosure. For power conversion systems, such as the half-bridge configuration of power module 100 shown in fig. 1A, there is an impedance 204 within each component including DC link capacitor 102, bus system 202, and power module 100, as well as in the physical interconnection between DC link capacitor 102, bus system 202, and power module 100. Fig. 2 depicts an inductor. More functional elements and associated impedances are typically present in power converters; however, this loop may be the most important for switching performance.

In most power converters, these inductances must be carefully considered in the system design. Typically, this requires adding more DC link capacitors 102 or slowing down the switching speed to counteract the parasitic effects. While effective, this results in larger systems (larger and heavier capacitors) with higher losses (due to slower switching events in the presence of both high current and high voltage).

In power packages intended for Si devices, the typical turn-on and turn-off times of Si IGBTs are inherently slow enough that the inductance encountered in the internal power loop is low enough. However, for extremely fast switching of wide bandgap devices such as SiC MOSFETs, the inductance in conventional packages can cause a voltage overshoot of several hundred volts.

These problems are further amplified by the need to connect many SiC devices in parallel to achieve high current levels in power module 100. The parallel array of power switches and diodes (all switches, all diodes, interleaved diodes, edge diodes, etc.) in various combinations is referred to as a "position" or "switch position. Each of the switches in switch positions 104 together function as a single active switch, thereby increasing the amount of current that the circuit can handle or reducing the overall losses by reducing the effective resistance.

Fig. 3 illustrates various interconnections and associated impedances of switch positions in accordance with aspects of the present disclosure. In the switch position 104, each switch or power device 302 has its own separate current path in the structure. As shown in fig. 3, each interconnect has an associated impedance 204. As further shown in fig. 3, the switch position 104 may include any number of power devices 302, as indicated by the symbols shown at arrows 304. Care must be taken to ensure that the effective current paths between the power devices 302 are balanced so that the power devices 302 each see a matched inductance. Otherwise, the current and voltage encountered during switching transitions may not be shared equally among the power devices 302 across the switch location 104, thereby unevenly stressing the components and increasing switching losses. Thermal effects exacerbate this situation-uneven current loading and switching events produce uneven thermal rises that result in drift in semiconductor characteristics and more instability across the parallel switch position 104.

Conventional power packages are typically designed for a single Si IGBT or a small array of these devices (typically 4 or less). Therefore, they are not suitable for paralleling a large number of SiC MOSFETs and diodes (or similar wide bandgap devices) in a manner that results in a clean, well controlled switch.

The disclosed power module 100 provides a solution for a power device 302, such as a wide bandgap device, which may include one or more of the following non-limiting aspects:

reducing the internal inductance of the power module 100;

facilitating an equalized current path between the parallel power devices 302 in the switch position 104;

heat is shared equally among the power devices 302 across the switch positions 104;

having an external structure that allows low inductance interconnection with the DC link capacitor 102;

can safely carry high current (hundreds of amperes) under high voltage (1700V).

It should be understood that these above-described features of the power module 100 are not required and may not be implemented in certain aspects of the present disclosure.

FIG. 4A illustrates a perspective schematic view of a power module according to one aspect of the present disclosure; and fig. 4B shows a schematic top view of a power module according to an aspect of the present disclosure. Specifically, a half-bridge configuration of the power module 100 is shown in fig. 4A and 4B. The disclosed power module 100 addresses each of the issues previously listed with respect to custom designed power layouts and associated structures to facilitate the most common bridge topology where each switch position 104 possesses a balanced low inductance current path. The

terminals

106, 108, 110 may be arranged such that the path to the external filtering DC link capacitor 102 may also have a correspondingly low inductance, wherein the uncomplicated laminated bus bar does not require bending or special design features as described in more detail below.

The power terminal pin outputs of a single half-bridge configuration of the power module 100 are depicted in fig. 4A. The V + terminal 106 and the V-terminal 108 may be intentionally placed close together (with enough room for a voltage gap) to physically minimize the outer current loop to the DC link capacitor 102.

The power module 100 may include

signal terminals

502, 504, 506, 508. The particular pin outputs of the

signal terminals

502, 504, 506, 508 may be modular and may be modified as desired. This configuration is shown in fig. 4A. As shown, there are four pairs of signal pins for

signal terminals

502, 504, 506, 508 for differential signal transmission. Of course, any number of signal pins and any number of signal terminals may be implemented to provide the functionality described in connection with the present disclosure. Each switch position 104 may utilize a pair of pins with

terminals

502, 504 for gate signals and source kelvin for optimal control. Other pin pairs of the

signal terminals

506, 508 may be used for internal temperature sensors, over-current sensing, or for other diagnostic signals. It is contemplated that more pins and/or more signal terminals may be added to any row if necessary, so long as they do not cause voltage isolation problems. In some aspects, other diagnostic signals may be generated from a diagnostic sensor, which may include a strain gauge or the like that senses vibrations. The diagnostic sensor may also determine humidity. In addition, the diagnostic sensor may sense any environmental or device characteristic.

Fig. 5 shows a plurality of single-phase modules in a parallel configuration in accordance with aspects of the present disclosure. Modularity is the basis for the disclosed power module 100. The single phase configuration of power module 100 can be easily connected in parallel to achieve higher currents. As shown in fig. 5, three power modules 100 are shown, but there is no limit to how many are configured in this manner. In this regard, arrow 510 illustrates that additional power modules 100 may be arranged in parallel. When connected in parallel, each of the

corresponding terminals

106, 108, 110 may be electrically connected between each of the power modules 100.

Fig. 6A illustrates a first power module configuration, according to aspects of the present disclosure; and fig. 6B shows a second power module configuration in accordance with aspects of the present disclosure. Scalability of the disclosed power module 100 may be another defining feature. This is depicted in fig. 6A and 6B. As shown in fig. 6B, the width of the power module 100 may be extended to accommodate more parallel devices per switch position 104 than the power module 100 shown in fig. 6A. Additional fastener holes 512 may be added to the power contacts of the

terminals

106, 108, 110 due to the increased current of the power module 100. It is important to note that the power modules 100 may be connected in parallel as shown in fig. 5, or may be scaled to match most power levels as shown in fig. 6B, without sacrificing the advantages of the present disclosure, including, for example, low inductance, clean switching, high power density, etc.

Fig. 7 shows a power module in a full-bridge configuration, in accordance with aspects of the present disclosure; fig. 8 illustrates a power module in a three-phase configuration, according to aspects of the present disclosure; and fig. 9 shows a single power module having a full-bridge configuration, according to aspects of the present disclosure. In some aspects, modularity may also be found in the formation of various electrical topologies, such as fig. 7 for a full-bridge configuration of two power modules 100, and fig. 8 for a three-phase configuration of three power modules 100. For these topologies, the V + terminal 106 and the V-terminal 108 may be interconnected, while the phase output terminal 110 may remain separate. The configurations of fig. 7 and 8 may also be placed in a single housing and may be configured with a shared backplane as shown in fig. 9, which may increase power density while trading off higher unit complexity and cost.

Although the various arrangements, configurations, and scaled wide versions of the power module 100 cover a range of applications and power levels, the core internal components and layout may remain the same. This enhances the modular nature of the disclosed power module 100. The architecture comprises a series of modules that exhibit a high level of performance while being easy to use and growing with a range of customer specific systems.

Fig. 10 shows an exploded view of a power module according to aspects of the present disclosure; and fig. 11 shows a partial view of the power module of fig. 10. In particular, fig. 10 shows a number of elements in the power module 100. These elements include one or more of a base plate 602, a gasket 604, one or more power substrates 606, one or more edge power contacts 608, one or more switch positions 104, one or more temperature sensors 610, a housing sidewall 612, a center power contact 614, a signal interconnect assembly 616, a housing cover 618, fasteners 620, captive fasteners 622, and the like. In one aspect, the bottom plate 602 can comprise metal. In one aspect, the metal may comprise copper. Further, it is contemplated that power module 100 may include fewer or different elements than those described herein.

The power module 100 may include a backplane 602. The base plate 602 may provide structural support to the power module 100 as well as facilitate heat dissipation for thermal management of the power module 100. The backplane 602 may comprise a base metal such as copper, aluminum, or the like or a Metal Matrix Composite (MMC) material that may provide Coefficient of Thermal Expansion (CTE) matching to reduce thermally generated stresses. In one aspect, the MMC material may be a composite of a high conductivity metal, such as copper, aluminum, and the like, and a low CTE metal, such as molybdenum, beryllium, tungsten, and/or a non-metal, such as diamond, silicon carbide, beryllium oxide, graphite, embedded pyrolytic graphite, and the like. Depending on the material, the base plate 602 may be formed by machining, casting, stamping, or the like. The base plate 602 may have a metal plating such as nickel, silver, gold, etc. to protect the surface of the base plate 602 and improve soldering ability. In one aspect, the bottom plate 602 may have a flat back surface. In one aspect, the base plate 602 may have a convex profile to improve planarity after reflow. In one aspect, the base plate 602 may have pin fins 642 for direct cooling, as discussed further below with reference to fig. 43-59.

The power module 100 may include a gasket 604. Gasket 604 may improve the packaging process by providing a fluid tight seal. In this regard, the power module 100 may include an internal dielectric package. The gasket 604 may be injection molded, dispensed, etc., and may be applied in a groove in the housing sidewall 612 and compressed between the housing sidewall 612 and the bottom plate 602.

The power module 100 may include one or more power substrates 606. The one or more power substrates 606 may provide electrical interconnection, voltage isolation, heat transfer, etc. for the power device 302. The one or more power substrates 606 may be configured as Direct Bonded Copper (DBC), Active Metal Braze (AMB), Insulated Metal Substrate (IMS), and the like. In the case of an IMS architecture, one or more power substrates 606 and the backplane 602 may be integrated as the same component. In some aspects, one or more power substrates 606 may be attached to the base plate 602 with solder, thermally conductive epoxy, silver sintering, or the like. In one aspect, there may be two power substrates 606, one for each switch position 104.

The power module 100 may include one or more edge power contacts 608. A surface of one of the one or more edge power contacts 608 may form a V + terminal or first terminal 106. A surface of one of the one or more edge power contacts 608 may form the phase terminal or third terminal 110. One or more edge power contacts 608 may create a high current path between an external system and one or more power substrates 606. One or more edge power contacts 608 may be made from sheet metal by an etching process, a stamping operation, or the like. One or more of the edge power contacts 608 may have a partial thickness bend assist line 624 to facilitate bending of the one or more edge power contacts 608 to aid in final assembly. In one aspect, one or more of the edge power contacts 608 can be folded over the captive fasteners 622. In one aspect, one or more edge power contacts 608 may be directly soldered, ultrasonically soldered, or the like, to the power substrate 606. One or more of the edge power contacts 608 may have a metal plating such as nickel, silver, gold, etc. to protect the surface and improve solderability.

In one aspect, the base 636 of the edge power contact 608 may be split into legs to aid in the attachment process. The substrate 636 may have a metal plating such as nickel, silver, and/or gold to protect the surface and improve solderability.

The power module 100 may further include one or more switch positions 104. One or more switch positions 104 may include a power device 302, which power device 302 may include any combination of controllable switches and diodes placed in parallel to meet current, voltage, and efficiency requirements. The power device 302 may be attached with solder, conductive epoxy, silver frit material, or the like. Upper pads (including the gate and source) on the power device 302 may be wire bonded with power wire bonds 628 to corresponding locations on the upper pads. The power wire bonds 628 may comprise aluminum, aluminum alloy, copper, etc. wires, which may be ultrasonically welded, etc. at the two legs, thereby forming a conductive arch between the two metal pads. Signal bond 626 may be formed in a similar manner and may be aluminum, gold, copper, etc. In some aspects, the diameter of the wire of the power wire bond at 626 may be less than the diameter of the wire of the power wire bond 628.

The power module 100 may further include one or more temperature sensors 610. One or more temperature sensors 610 may be implemented with resistive temperature sensor elements attached directly to the power substrate 606. Other types of temperature sensors are also contemplated, including resistance temperature detector (RDT) type sensors, Negative Temperature Coefficient (NTC) type sensors, optical type sensors, thermistors, thermocouples, and the like. One or more temperature sensors 610 may be attached with solder, conductive epoxy, silver frit material, etc., and may then be wire bonded to the signal interconnect assembly 616. The power module 100 may further include one or more diagnostic sensors, which may include strain gauges or the like that sense vibrations. The diagnostic sensor may also determine humidity. In addition, the diagnostic sensor may sense any environmental or device characteristic.

The power module 100 may further include a housing sidewall 612. The housing sidewall 612 may be formed of a synthetic material. In one aspect, the housing sidewall 612 may be an injection molded plastic element. The housing sidewall 612 may provide electrical insulation, voltage creepage and clearance, structural support, and a cavity for holding a voltage and moisture barrier enclosure. In one aspect, the housing sidewall 612 may be formed from reinforced high temperature plastic in an injection molding process.

The power module 100 may further include a center power contact 614. The surface of the center contact 614 may form a V-terminal or second terminal 108. The center power contact 614 may create a high current path between the external system and the power device 302. The central power contact 614 may be made from sheet metal by an etching process, a stamping operation, or the like. The center power contact 614 may be isolated from the underlying power substrate 606 by an inset housing sidewall 612 (as shown) or may be soldered or welded to a second power substrate as described below. As shown in fig. 11, the center power contact 614 may include one or more apertures 632 for receiving corresponding fasteners 634 that fasten the center power contact 614 to the housing sidewall 612.

As shown in fig. 11, the low side switch position power devices 302 may be wire bonded 640 directly from their terminals to the center power contact 614. The central power contact 614 may have a partial thickness bend assist line 624 to assist in folding during the final assembly stage. The center power contact 614 may have a metal plating such as nickel, silver, gold, etc. to protect the surface and improve bonding capability.

The power module 100 may further include a signal interconnect component 616. The signal interconnect component may be a gate-source plate. The signal interconnect assembly 616 may be a small signal circuit board to facilitate electrical connection from the signal contacts to the power device 302. The signal interconnect component 616 may allow gate and source kelvin connections as well as connections to additional nodes or internal sensing elements. The signal interconnect component 616 may allow for separate gate resistors for each of the power devices 302. The signal interconnect component 616 may be a printed circuit board, ceramic circuit board, flexible circuit board, embedded metal strip, etc. disposed in the housing sidewall 612. In one aspect, the signal interconnect component 616 may include multiple components. In one aspect, signal interconnect component 616 may include multiple components, one for each switch position 104.

The power module 100 may further include a housing cover 618. The housing cover 618 may be a composite element. In one aspect, the housing cover 618 may be an injection molded plastic element. The housing cover 618 may provide electrical insulation, voltage creepage and clearance, and structural support. In this regard, the housing cover 618 together with the housing sidewall 612 may form a closed assembly. The closure assembly may prevent foreign substances from entering the interior of the power module 100. In one aspect, the housing cover 618 may be formed from reinforced high temperature plastic in an injection molding process.

The power module 100 may further include a fastener 620. The fastener 620 may be a thread forming screw. Other types of fasteners are also contemplated. The fastener 620 may be used to thread directly into the housing sidewall 612 to fasten various components in the power module 100. Fasteners 620 may be used for housing cover 618 attachment, signal interconnect assembly 616 attachment, embedding central power contact 614 (if it is not embedded by another means), for fastening housing sidewall 612 to base plate 602, and the like.

The power module 100 may further include a captive fastener 622. The captive fasteners 622 may be hex nuts placed in the housing sidewall 612 and housing cover 618, and may be captively retained under the edge power contacts 608 and the center power contacts 614 after the edge power contacts 608 and the center power contacts 614 are folded. Other types of fasteners or connectors are contemplated for implementing the captive fasteners 622. The captive fasteners 622 may facilitate electrical connection to an external bus bar or cable. The captive fasteners 622 may be arranged such that when the power module 100 is bolted to the bus bar, the captive fasteners 622 and the edge power contacts 608 are pulled up into the bus bar, thereby forming a better quality electrical connection. If the captive fasteners 622 are secured to the housing, the captive fasteners 622 may be used to pull the bus bar down into the power module 100, which may create a poor connection due to the rigidity of the bus bar.

In one aspect, the housing cover 618 may include a hole shaped to conform to the outer shape of the captive fastener 622 to prevent rotation of the captive fastener 622. A corresponding fastener (as shown in fig. 26) may be received by the captive fastener 622. A corresponding fastener extends through the fastener hole 512 in the center power contact 614 to facilitate electrical connection to an external bus bar or cable.

In one aspect, the housing sidewall 612 may include a hole shaped to conform to the outer shape of the captive fastener 622 to prevent rotation of the captive fastener 622. A corresponding fastener (as shown in fig. 26) may be received by the captive fastener 622. A respective fastener extends through the fastener hole 512 in one or more of the edge power contacts 608 to facilitate electrical connection to an external bus bar or cable.

To achieve low internal inductance, the current paths of the power module 100 may be wide, short in length, and overlapping whenever possible to achieve flux cancellation. When the current traveling through the loop moves very close in the opposite direction, magnetic flux cancellation occurs, effectively canceling its associated magnetic field. The main advantage of this modular approach is that the entire width of the footprint is used for conduction. The module height may be minimized to reduce the length that current must travel through the structure.

The power circuit for the half bridge phase leg is shown in fig. 11, where the edge power contact 608 and the center power contact 614 are folded to show detail. The wide, low profile edge power contact 608 and center power contact 614 direct current into the power device 302. The effective current paths from the terminal surfaces to the respective power devices 302 may be functionally equivalent. Furthermore, the power devices 302 may be placed in close proximity, thereby minimizing their imbalance with respect to the loop inductance and ensuring excellent thermal coupling.

Fig. 12A shows a top view of a phase leg of a power module constructed in accordance with the present disclosure, wherein each node is identified in a half-bridge topology; and fig. 12B shows a schematic diagram of a phase leg of a power module constructed in accordance with the present disclosure, wherein each node is identified in a half-bridge topology in accordance with fig. 12A. The power module 100 may include one or more diodes. In one aspect, the diodes in the schematic may be discrete diodes (not shown) placed in anti-parallel. In one aspect, the diodes in the schematic may be representative of the body diodes of the power device 302 implemented as MOSFETs (as shown).

In one aspect, the current path may begin at a V + node terminal 608, which V + node terminal 608 may be attached to the power substrate 630 and the drain D1 of the upper one of the power devices 302. The source S1 of the upper one of the power devices 302 may then be wire bonded 628 to a lower power substrate pad 630, the lower power substrate pad 630 being attached to the drain D2 of the low side power device 302 and the phase power terminal 608. Finally, the source S2 of the low side power device 302 may be wire bonded 628 to the V-power contact terminal 614, which V-power contact terminal 614 may be above the low power substrate 630 providing some overlap, and may be substantially voltage isolated from the underlying power substrate 630.

Fig. 13 shows a cross-sectional view of the phase leg of fig. 12A and 12B; fig. 14 shows a cross-sectional view of the phase leg of fig. 12A and 12B including a current path. As shown in fig. 13, the tabs of the power contacts or

terminals

106, 108, 110 are folded when they are in the final configuration of the power module 100 structure. Layer thicknesses are exaggerated to show details. When the visible current flows, all elements in the figure can be considered as conductors.

Fig. 13 further illustrates a trapezoidal, multi-height, or multi-elevation configuration of power module 100. In this regard, the vertical position of the terminals 614 is shown to be higher than the vertical position of the terminals 608. The height difference is indicated by arrow 702. This multi-level configuration may provide a critical circuit as described in more detail below. In addition, the multi-height configuration may help provide bus bar connections, as also described further below.

Fig. 14 shows the overlap of the current paths from the V + terminal to the V-terminal, representing a critical loop for a clean switch according to aspects of the present disclosure. Inductance is proportional to the path length, decreases as the cross-sectional area of the conductor increases, and decreases as the magnetic flux in the magnetic field cancels out. The identified path begins at terminal 608 and flows across power device 302 through power substrate 630, through power device 302 to second substrate 630, and out terminal 614. The identified path is low inductance due to the following factors:

low height of the module;

power device 302 is in close proximity to

terminals

608, 614;

tight packaging of all functional elements;

a wide cross-sectional area of the conductor;

optimized parallel wire bonds 628 for each power device 302;

even sharing current among power devices 302;

flux cancellation upon reversal of current direction at the low side switch position;

the magnetic flux in the outer V +/V-bus bars is cancelled.

Fig. 15 illustrates a contact surface of a power module with a buss bar according to one aspect of the present disclosure. The contact surfaces of the V + terminal 608 and the phase terminal 608 may be planar, while the top of the V-terminal 614 is offset from the rest. This feature allows the outer V +/V-laminated

busses

802, 804 to contact both

terminals

608, 614 without requiring bends in the

laminated busses

802, 804, as shown in fig. 15. The offset distance 702 (as shown in fig. 13) may be adjusted to match the thickness of the bus bar metal and associated dielectric isolation film.

The low internal module inductance in combination with the minimized external inductance in the

busses

802, 804, 806 to the DC link capacitor bank 102 results in an optimized structure of the power module 100 for clean, fast switching events with low voltage overshoot and stability performance. The smaller loop inductance results in a reduction in the total capacitance required on the DC link capacitor 102.

Together, these advantages allow for lower switching losses, higher switching frequencies, improved controllability, and reduced EMI. Ultimately, this helps system designers achieve higher power densities and more robust power conversion systems.

Fig. 16A, 16B, and 16C illustrate various aspects of a terminal of a power module according to aspects of the present disclosure. A multi-layer layout of the V-terminal 614 in the middle of the power module 100 may be necessary for this design. Proper voltage isolation of the terminal 614 may be achieved by forming various configurations of isolation structures, the terminal 614 being located directly over the output traces on the power substrate 630. The power module 100 design is compatible with:

fig. 16A illustrates one aspect of isolation of the V-terminal 614. In this regard, the power module 100 may include embedded isolation 810 of the V-terminal 614. Embedded isolation 810 may be formed of plastic or other synthetic material. Embedded isolation 810 may be located in housing sidewall 612 as a strip 810 bridging the central region. In one aspect, the strip 810 may be formed of plastic. The power contacts 614 may be embedded into the strip 810 by a variety of methods, including mechanical fastening such as with a threaded screw, direct integration such as through a plastic overmolding process, riveting in place with a plastic hot melt operation, etc.

Fig. 16B shows another aspect of the isolation of the V-terminal 614. In this regard, the power module 100 may form isolation of the V-terminal 614 by power substrate isolation. In this regard, the secondary power substrate 812 may be used to provide isolation through its dielectric material layer (such as ceramic, etc.). The secondary power substrate 812 may be soldered, sintered or epoxied to the power substrate 630, while the power contacts 614 may be soldered or fused to upper metal pads on the secondary substrate. An advantage of this approach is improved heat transfer of the central power contact 614 because the secondary power substrate 812 is highly conductive and will facilitate heat removal from the power contact 614 to a cold plate or heat sink.

Fig. 16C shows another aspect of the isolation of the V-terminal 614. In this regard, thick film isolation 814 may be utilized. Thick film isolation 814 may utilize a printed thick film dielectric directly on power substrate 630 and may provide voltage blocking. Center contact 614 may be attached to thick film isolation 814 by epoxy, soldered directly to a thin layer of metal thick film printed on top of the dielectric film, etc.

In other aspects, the isolation of the V-terminal 614 may include suspension isolation (not shown). In this regard, the center power contact 614 may be suspended a sufficient distance above the power substrate 630 and attached to the housing sidewall 612 in a manner similar to the embedded approach. In this regard, the gel encapsulation filling the power module 100 may provide dielectric isolation. However, the center contact 614 may require the use of a high stiffness material to not interfere with the formation of the power wire bonds 628 between the low side device and the contacts.

Fig. 17 schematically illustrates a plurality of devices connected in parallel, according to aspects of the present disclosure. Specifically, fig. 17 shows three power devices 302. This is merely exemplary and is for ease of illustration and understanding. The power module 100 of the present disclosure may include any number of power devices 302.

The gate control and sense signals significantly affect the switching performance of the power module 100 and may be particularly important in the parallel switch position 104. The signal loop may be optimized in the power module 100 for high performance, robustness and uniform current sharing. Similar to the power loop, the path may be configured to be limited in length, wide in cross-section, and the associated external components may be placed as close as physically possible to the

signal terminals

502, 504.

For parallel arrays of power devices 302, such as transistors, particularly MOSFETs, the timing and magnitude of the gate currents must be balanced to produce consistent on and off conditions. The power module 100 may utilize a separate ballast resistor R_G1、R_G2、R_G3These ballast resistors may be placed near the gates of the power device 302, separated only by gate wire bonds. These components are low resistance and help buffer the current flowing to each individual power device 302. These components are used to decouple the gates of the power devices 302, thereby preventing oscillation and helping to ensure an equalized turn-on signal for the parallel power devices 302. A single external resistor R may be utilized_DriverAnd connect it to these parallel resistors R_G1、R_G2、R_G3For controlling the on speed of the active switch position 104.

Depending on the application, the gate resistor R_G1、R_G2、R_G3May be surface mount packages, integrated thick film layers, printed thick films, wire bonded chips, etc.

FIG. 18 illustrates a perspective view of an active gate switch loop, according to one aspect of the present disclosure; and fig. 19 shows a top view of an effective gate switch loop in accordance with an aspect of the present disclosure. The signal substrate or signal interconnect 616 may have

tracks

816, 818 connected to the gate and source

kelvin connector terminals

502, 504 on board edges of the signal interconnect 616. The upper rail 818 may be connected to the gate wire bond pad through a separate gate resistor 820, while the lower rail 816 may be wire bonded directly to the source pad of the power device 302. This can be considered a true kelvin connection because the source kelvin bond is not in the current path of the power bond. Kelvin connections may be important for clean and efficient control, reducing the impact of high drain-to-source current on the signal loop.

Fig. 18 and 19 further illustrate the

optional signal connections

506, 508 on the left hand side of the signal interconnect assembly 616. These connections may be used for temperature measurement or other forms of internal detection. In some aspects, the internal sensing may include diagnostic sensing including diagnostic signals that may be generated from diagnostic sensors, which may include strain gauges that sense vibration, sensors that sense humidity, and the like. In addition, the diagnostic sensor may sense any environmental or device characteristic. In one aspect, the temperature sensor 610 may be placed in a low-side position. Of course, other locations and arrangements of the temperature sensor 610 are also contemplated. In one aspect, wire bonds may be placed on the upper pad beside the drain traces (e.g., beside the power supply device 302) for over-current measurement (also referred to as desaturation protection in the case of IGBTs). Of course, other locations and arrangements of overcurrent measurement are also contemplated. In some aspects, an over-current sensor or a desaturation sensor may sense a voltage drop determined by a connection to the drain of the power device 302. In some aspects, the current may also be sensed by the voltage drop across the power device 302.

This implementation of the signal loop or signal interconnect component 616 may ensure quality control and measurement across any combination of parallel power devices 302 in the switch position 104. A standard PCB board-to-board connector may allow direct connection to external gate driver and control circuitry.

As shown, the gate distribution network may be implemented with a PCB. The thick film circuit may be formed directly on the main power substrate 630, directly on the chassis 602, or the like. This has the benefit of reducing the component count of the power module 100 and the option of printing the gate resistor 820. The gate resistor 820 may be much smaller than the size of the surface mounted components on the PCB because solder terminals may not be needed and the gate resistor 820 may be actively cooled from a cold plate, thereby minimizing the thermal size limitations of the assembly.

Fig. 20 illustrates a partial example implementation including a power module according to aspects of the present disclosure. In this regard, fig. 20 is a representative exemplary structure for implementing the power module 100 of the present disclosure in a high performance system. This general approach is applicable to many other configurations and topologies as a useful example of how the power module 100 can be utilized in a converter. This particular example is for a three-phase motor drive. In this regard, there are three power modules 100.

The disclosed power module 100 may be configured as a half-bridge phase leg array (three as shown). Additional power modules 100 may be included in parallel to increase current as needed by the application.

The implementation of fig. 20 may further include a cold plate 902. The cold plate 902 may be a high performance liquid cold plate, a heat sink, or the like, for transferring waste heat from the power module 100 to another source (liquid, air, or the like).

The implementation of fig. 20 may further include a DC link capacitor 102. The DC link capacitor 102 may be implemented as a filter capacitor that connects the DC power and the power module 100. In one aspect, the DC link capacitor 102 may be implemented as a single capacitor. In another aspect, the DC link capacitor 102 may be implemented as a plurality of components forming a "bank" of capacitors, depending on the power requirements of the load and/or the particular application.

The implementation of fig. 20 may further include a cold plate support 904. The cold plate holder 904 may provide structural support to the cold plate 902. Cold plate carrier 904 may be configured as shown to lift and

place terminals

106, 108 of power module 100 and capacitor contacts 906 in a plane. In this regard, a flat bus bar without bends may interconnect the components. For higher power densities or for different types of capacitors, the height of the cold plate mount 904 may be adjusted to best utilize the form factor of the elements available for the converter. This may have a corresponding trade-off of increasing the electrical loop length, as a transition bend may be necessary and will depend on the system specific requirements.

Fig. 21 illustrates an exemplary laminated bus bar according to the present disclosure; fig. 22 shows a portion of the exemplary laminated busbar according to fig. 21; and fig. 23 shows another portion of the exemplary laminated bus bar according to fig. 21. The power terminal layout may be designed to facilitate simple and efficient bus bar interconnection. To minimize inductance between the DC link capacitor 102 and the

terminals

106, 108 of the power module 100, the bus bar 900 may have

thick conductors

910, 912, and the

thick conductors

910, 912 of the bus bar 900 may overlap. The

thick conductors

910, 912 may be separated by a thin dielectric film 914. Current flows in opposite directions through each of the

thick conductors

910, 912 for greatly reducing the effective inductance between the power device 302 and the filtering DC link capacitor 102. The upper layer of the thick conductor 910 may be embossed to form a coplanar contact 918 at the mating surface of the DC link capacitor 102, thereby eliminating the need for a gasket or spacer that may interfere with electrical performance.

An example laminated bus bar 900 that matches the system-level layout described above may include one or more of conductor V + plane 912, conductor V-plane 910, and dielectric film 914.

Conductor V + plane 912 may connect the V + terminal 106 of power module 100 through contact 926 to the V + terminal of DC link capacitor 102 through contact 928 and have terminal 920 for external connection.

The conductor V-plane 910 may connect the V-terminal 108 of the power module 100 through contact 924 to the V-terminal of the DC link capacitor 102 through contact 918 and have a terminal 922 for external connection. The

contacts

918, 924, 926, 928 and the

terminals

920, 922 may each be implemented with a fastener hole configured to receive a fastener to form an electrical connection. Other electrical connection implementations are also contemplated.

Conductors

910, 912 may include holes 940. A hole 940 in one of the

conductors

910, 912 allows access to a contact in the other of the

conductors

910, 912.

Dielectric film 914 may be implemented as a thin electrical insulator placed between overlapping metal layers of

conductors

910, 912. The dielectric film 914 may provide dielectric insulation in accordance with electrical safety standards. The dielectric film 914 may be kept as thin as possible to minimize inductance. The film may also cover the top and bottom of the laminated bus bar 900 in all areas where electrical connection is not required. Depending on the geometry and available space, the edges 916 of the laminated bus bar 900 may be sealed by various methods (including shrink-seal lamination, epoxy sealing, dielectric insert, etc.). In some aspects, the dielectric film 914 material may be adhered to the laminated bus bar 900 with an acrylic adhesive. In some aspects, the laminated bus bar 900 may include a shrink seal with a polymeric material. In some aspects, the laminated bus bar 900 may then be subjected to pressure, heat, and time to form a laminate.

In some aspects, the bus bar 900 and

conductors

910, 912 have a generally planar structure. More specifically, the bus bar 900 may have a substantially flat upper surface and a substantially flat lower surface, as shown in fig. 15. In some aspects, the thickness of one of

conductors

910, 912 and dielectric film 914 defines offset distance 702 shown in fig. 13. In one aspect, the thickness of one of

conductors

910, 912 and dielectric film 914 may be 0.5mm to 10mm, which corresponds to offset distance 702. In one aspect, the thickness of one of

conductors

910, 912 and dielectric film 914 may be 1mm to 2mm, which corresponds to offset distance 702. In one aspect, the thickness of one of the

conductors

910, 912 and the dielectric film 914 may be 0.5mm to 1mm, which corresponds to the offset distance 702. In one aspect, the thickness of one of

conductors

910, 912 and dielectric film 914 may be 2mm to 3mm, which corresponds to offset distance 702. In one aspect, the thickness of one of

conductors

910, 912 and dielectric film 914 may be 3mm to 4mm, which corresponds to offset distance 702. In one aspect, the thickness of one of the

conductors

910, 912 and the dielectric film 914 may be 4mm to 5mm, which corresponds to the offset distance 702. In one aspect, the thickness of one of the

conductors

910, 912 and the dielectric film 914 may be 5mm to 6mm, which corresponds to the offset distance 702. In one aspect, the thickness of one of

conductors

910, 912 and dielectric film 914 may be 6mm to 7mm, which corresponds to offset distance 702. In one aspect, the thickness of one of

conductors

910, 912 and dielectric film 914 may be 7mm to 8mm, which corresponds to offset distance 702. In one aspect, the thickness of one of

conductors

910, 912 and dielectric film 914 may be 8mm to 9mm, which corresponds to offset distance 702. In one aspect, the thickness of one of

conductors

910, 912 and dielectric film 914 may be 9mm to 10mm, which corresponds to offset distance 702.

Fig. 24 shows a phase output bus bar according to the present disclosure. For a three-phase motor drive, as in this example, the phase outputs 930 may not need to be laminated or overlapped to minimize inductance. This is due to the fact that phase output bus 930 drives an inductive load, which limits the need to reduce the inductance on the output path. Thus, the phase output bus bar 930 may be a separate element and may be much simpler than a laminated DC link structure. The phase output bus bar 930 may include holes 934 for receiving fasteners to form an electrical connection.

It is highly desirable to measure the output current from each phase. This may be performed by a variety of methods, such as adding a low resistance series resistor (referred to as a shunt) and measuring the voltage drop across the low resistance series resistor, including sensors that measure the magnetic field generated by the current and provide a proportional signal to a controller, and the like. Fig. 24 shows one of the output bus bars 930 for this system and a configuration that improves measurement accuracy by adding a ferrous shield 932 to focus the magnetic field in the area where the sensor may be located.

The phase output bus bar 930 or conductor may be configured to provide conversion from the phase output terminal 110 of each power module 100 to an external terminal connection. The form and arrangement of the phase output bus 930 or conductors may vary and depend on the specific topology or arrangement of the power module 100.

The ferrous shield 932 or magnetic field concentrator may be configured to focus the magnetic field generated by the current in a target area where the sensor may be placed. This may not be necessary for operation, but in most converter systems a highly advantageous arrangement to extract the output current measurement.

Fig. 25 shows a perspective view of an exemplary implementation including a power module and a laminated bus bar according to aspects of the present disclosure; fig. 26 shows a first cross-sectional view of an exemplary implementation including a power module and laminated bus bar according to fig. 25; and fig. 27 shows a second cross-sectional view of an exemplary implementation including a power module and laminated bus bar according to fig. 25. Fig. 25 to 27 show the layout of the motor drive system having the laminated bus bar 900 structure described above. As shown in fig. 25-27, the system may include an array of power modules 100, a cold plate 902 assembly, a DC link capacitor 102, a DC link laminated bus bar 900 assembly, and an output contact bus bar 930.

The cross-section of the terminals of the DC-link capacitor is shown in fig. 26. Fig. 26 shows an embossed coplanar connection 918 featuring a bus bar 900 and a high degree of metal lamination in each of the possible locations. The only separation between the

plates

910, 912 may be the minimum area required for the metal plate fabrication process (embossing tool, workpiece clamping, tolerances, etc.) and the dielectric isolation 914 (edge seal, creepage distance, clearance).

The cross section of the power module 100 shown in fig. 27 illustrates an optimized overlapping critical loop from the DC link capacitor bank 102 to the

terminals

106, 108 of the power module 100. This enhances the concept discussed in FIG. 15 with actual representative components and physical design constraints.

In summary, such a low inductance, high current interconnect structure may be necessary for and implemented by the disclosed power module design. Together they form an efficient and highly integrated low inductance path between the DC link capacitor bank 102 and the switch location 104. This structure allows for efficient, stable and very high frequency switching of the power device 302, such as a wide bandgap semiconductor.

Fig. 28 illustrates an exemplary single module gate driver according to the present disclosure. The gate driver acts as a power amplifier to deliver drive current to the switch location 104 while providing voltage isolation between the controller and the high voltage power stage. Isolation may also be maintained between driver modules between switch positions 104. For high frequency switching, the output stage of the driver may be physically close to the switch location 104.

Additional features such as under-voltage, over-voltage and over-current protection may be included for safety. The gate driver circuit may be configured to ensure that the power module 100 is always operating in a safe operating region and will be carefully shut down in the event of a fault.

With this power module design, the gate driver can be placed directly over the laminated power bus 900. They may be formed as a single PCB and expanded or scaled in the same modular fashion as the power module 100. Alternatively, the driver may also be integrated on a single PCB across the array of power modules 100, saving size but increasing complexity due to multiple high voltage nodes on the board. The output stage of the driver may be located directly adjacent to the board-to-board connector that contacts the module signal pins.

Fig. 28 presents an example single module gate driver 400. A single module gate driver 400 element may be replicated for each switch position 104. The arrangement and specific layout of each block may be system-dependent and configured as a general example in this figure.

The individual module gate driver 400 elements may include one or more of a control signal connector 410, an isolation power supply 420, a signal isolation and conditioning component 430, an amplifier stage 440, a bulk gate resistor and local current filter 450, a sensor and protection component 460, a power module signal connector 470, and a creepage extension slot 480. The single module gate driver 400 may be disposed on a Printed Circuit Board (PCB) 402.

The control signal connector 410 may be configured to connect the controller and the gate driver such that differential control and sensor signals may be transmitted between the controller and the gate driver via cables, board-to-board connectors, or similar mechanisms.

The isolated power supply 420 may be implemented as a DC-DC converter to provide the positive and negative voltages required for the switching on and off of the power device 302. The isolated power supply 420 may be a sufficiently high power to provide the current required by the power device 302. The isolation between the control stage and the power stage can be an important function of the block.

The signal isolation and conditioning component 430 may include circuitry for providing isolation of control signals between low voltage control and high voltage power and conditioning control signals of the amplifier stage 440 of the driver.

The amplifier stage 440 may be formed of discrete or integrated components. Amplifier stage 440 may convert the isolated low power control signal to the current and voltage required for operation of switch position 104. This should be physically as close as possible to the module signal terminals to achieve a clean switch.

The block gate resistor and local current filter 450 may be the final stage before switching to the output pin, block gate resistor and local current filter 450, and may be used to adjust the on and off times of the switch positions 104 to match the needs of a particular system. These may be a single set of passive elements if different switching characteristics are required, or as part of a network with different resistance values for switching on and off. The local filter may also be used to ensure that a high quality current source is maintained during a switching event.

The sensor and protection assembly 460 may include circuitry that may include under-voltage and over-voltage protection, over-current protection, temperature sensing, and mechanisms to shut down safely in the event of a fault.

The power module signal connector 470 may be located on the underside of the PCB 402. The power module signal connector 470 may connect the gate driver and the power module 100, providing a direct connection to the gate distribution network inside the power module 100. This can typically be facilitated by board-to-board connectors, direct solder connections, and the like. Wire-to-board connections are also possible, but may require the driver to be physically close to the power module 100.

Creepage extension slot 480 may be configured to improve voltage isolation between driver stages, allowing for more compact packaging of components. As the size of high voltage power modules continues to shrink, voltage isolation is an increasing challenge. Cutting slots in PCB 402 may be one option to increase voltage creepage without increasing board size. Other options include partial filling of critical nodes and complete coverage of the entire assembly with a conformal dielectric coating. More specifically, the various components of power module 100, including PCB 402, may include discrete and/or partial potting of one or more components; and the various components of the power module 100 including the PCB 402 may include a conformal dielectric coating over one or more components of the power module 100, the entire PCB 402, and/or other components.

When integrated together as shown in fig. 29, the gate driver 400 and power module 100 form a compact single unit with optimized low inductance signal flow from the control source, through isolation, amplification and then distribution directly to the gates of the parallel power devices 302 through the gate resistor network.

FIG. 30 shows a current sensing assembly according to aspects of the present disclosure; and fig. 31 shows a current sensing assembly arranged with phase output bus bars according to fig. 30. There are a variety of ways to sense current. In one aspect of the present disclosure shown in fig. 30 and 31, a sensor 980, such as a non-contact magnetic sensor, may be utilized. Sensor 980 may be used with iron shield 932 to focus the magnetic field. Sensor 980 may utilize a small sensor chip placed in this area that generates a signal proportional to the output current. Fig. 30 shows an example of a sensor on a single PCB 936 for all three phases, and fig. 31 shows a full output bus bar configuration with magnetic shielding.

Fig. 32 illustrates an example three-phase motor drive power stack in accordance with an aspect of the present disclosure. In particular, fig. 32 shows an exemplary three-phase motor drive power stack with all of the functional components previously described. The figure 32 system is highly integrated and highly optimized for peak electrical performance. Additional features such as voltage sensing of the capacitor bank and EMI shielding can are envisioned and would integrate well within the high performance core.

Fig. 33 schematically illustrates a plurality of power devices connected in parallel, according to aspects of the present disclosure. Specifically, fig. 33 shows four power devices 302. This number of power devices 302 is merely exemplary and is for ease of illustration and understanding. The power module 100 of the present disclosure may include any number of power devices 302.

The gate control and sense signals significantly affect the switching performance of the power module 100 and may be particularly important in the parallel switch position 104. The signal loop may be optimized in the power module 100 for high performance, robustness and uniform current sharing. In some aspects, a multilayer Printed Circuit Board (PCB) for signal return may be utilized. In these aspects, the parallel planes may be used for flux cancellation and further inductance reduction. Thus, a wide, short path may be folded back on itself to cancel the magnetic field. This helps to provide the best signal loop possible given the geometric constraints of the power module 100. Similar to the power loop, the path may be configured to be limited in length, wide in cross-section, and the associated external components may be placed as close as physically possible to the

signal terminals

502, 504.

For parallel arrays of power devices 302, such as transistors, particularly MOSFETs, the timing and magnitude of the gate currents must be balanced to produce consistent turn-on and timing conditions. The power module 100 may utilize a separate ballast resistor 820 (R)_G1、R_G2、R_G3、RG₄) These ballast resistors may be placed near the gates of the power device 302, separated only by gate wire bonds. Separate ballast resistor 820 (R)_G1、R_G2、R_G3、RG₄) May be low resistive and helps buffer the current flowing to each individual power device 302. Separate ballast resistor 820 (R)_G1、R_G2、R_G3、RG₄) For decoupling the gates of the power devices 302, thereby preventing oscillation and helping to ensure an equalized turn-on signal for the parallel power devices 302. A single external resistor R may be utilized_DRIVERAnd connects it to these parallel resistors 820 (R)_G1、R_G2、R_G3、RG₄) For controlling the on speed of the active switch position 104. In one aspect, a ballast resistor 820 may be associated with each power device 302. In an aspect, a separate ballast resistor 820 may be associated with each separate power device 302.

In additional aspects, the power module 100 may utilize a separate ballast source level kelvin resistor 822 (R)_S1、R_S2、R_S3、R_S4) These ballast source level kelvin resistors may be placed near the source kelvin connections of the power device 302. In a squareSurface, source Kelvin resistor 822 (R)_S1、R_S2、R_S3、R_S4) May be separated only by source kelvin wire bonds. In one aspect, a source kelvin resistor 822 may be associated with each power device 302. In an aspect, a separate source kelvin resistor 822 may be associated with each separate power device 302. Source Kelvin resistor 822 (R)_S1、R_S2、R_S3、R_S4) May be low resistive and helps buffer current flowing to the source kelvin connection of each individual power device 302. Source Kelvin resistor 822 (R)_S1、R_S2、R_S3、R_S4) May be used to decouple the source kelvin connections of the power devices 302, thereby preventing oscillation and helping to ensure an equalized signal across the power devices 302. In a particular aspect, the source Kelvin resistor 822 (R)_S1、R_S2、R_S3、R_S4) May be configured and implemented to account for any mismatches of the individual power devices 302, the layout of the individual power devices 302, and so forth.

In a particular aspect, the source Kelvin resistor 822 (R)_S1、R_S2、R_S3、R_S4) May be configured and implemented to prevent or reduce feedback oscillations between the individual power devices 302, suppress feedback oscillations between the individual power devices 302, decouple the source kelvin signals between the individual power devices 302, suppress current flow between the source kelvin signals of the individual power devices 302, equalize current flow between the source kelvin signals of the individual power devices 302, force current flowing through the individual power devices 302 to flow through a current path, and so forth. In addition, a source Kelvin resistor 822 (R)_S1、R_S2、R_S3、R_S4) Signal inductance may be reduced, ensuring that gate operation of the power device 302 is not slowed, minimizing gate/source over-voltages in the power device 302, and the like.

Source Kelvin resistor 822 (R) depending on the application_S1、R_S2、R_S3、R_S4) Can be surface mount package, integrated thick film layer, printed thick film, wire-bonded chip "Natural "resistive paths (material/structure interfaces that inherently increase resistance), etc. In one or more aspects, the source Kelvin resistor 822 (R)_S1、R_S2、R_S3、R_S4) And a resistor 820 (R)_G1、R_G2、R_G3、R_G4) The resistance values of (a) may be equal. In one or more aspects, the source Kelvin resistor 822 (R)_S1、R_S2、R_S3、R_S4) And a resistor 820 (R)_G1、R_G2、R_G3、R_G4) May be different. In one or more aspects, the source Kelvin resistor 822 (R)_S1、R_S2、R_S3、R_S4) May be in the range of 0.5 ohms to 1.5 ohms. In one or more aspects, the source Kelvin resistor 822 (R)_S1、R_S2、R_S3、R_S4) May be in the range of 0.5 ohms to 2 ohms. In one or more aspects, the source Kelvin resistor 822 (R)_S1、R_S2、R_S3、R_S4) May be in the range of 0.5 ohms to 5 ohms. In one or more aspects, the source Kelvin resistor 822 (R)_S1、R_S2、R_S3、R_S4) May be in the range of 0.5 ohms to 20 ohms. In one or more aspects, resistor 820 (R)_G1、R_G2、R_G3、R_G4) May be in the range of 1 ohm to 20 ohms. In one or more aspects, resistor 820 (R)_G1、R_G2、R_G3、R_G4) May be in the range of 1 ohm to 5 ohms. In one or more aspects, resistor 820 (R)_G1、R_G2、R_G3、R_G4) May be in the range of 1 ohm to 10 ohms. In one or more aspects, resistor 820 (R)_G1、R_G2、R_G3、R_G4) May be in the range of 1.5 ohms to 6 ohms.

Fig. 34 illustrates a top view of an active gate switch loop and power module in accordance with an aspect of the present disclosure. Specifically, fig. 34 shows signalsThe substrate or signal interconnect 616 may have

tracks

816, 818 connected to the gate and source

kelvin connector terminals

502, 504 on board edges of the signal interconnect 616. The track 818 may pass through a separate gate resistor 820 (resistor R)_G1、R_G2、…、R_GN) Connected to the wire bond pads, and the rail 816 may pass through a separate resistor 822 (resistor R)_S1、R_S2、R_S3、…、R_SN) To the source pad of the power device 302. This can be considered a true kelvin connection because the source kelvin key is not in the current path of the power bond. Kelvin connections may be important for clean and efficient control, reducing the impact of high drain-to-source current on the signal loop.

Fig. 34 further illustrates

optional signal connections

506, 508 on a signal interconnect component 616. The

connections

506, 508 may be used for temperature measurement or other forms of internal sensing. In some aspects, the internal sensing may include diagnostic sensing including diagnostic signals that may be generated from diagnostic sensors, which may include strain gauges that sense vibration, sensors that sense humidity, and the like. In addition, the diagnostic sensor may sense any environmental or device characteristic.

In one aspect, the sensor may be a temperature sensor 610, which may be placed on the power substrate 606 or the backplane 602. In one aspect, the power substrate 606 or the backplane 602 may have a metallic surface and/or a conductive surface that supports the power device 302. In one aspect, a portion 850 of the surface of the power substrate 606 or the base plate 602 may be different from the surface supporting the power device 302. In one aspect, portion 850 can be a portion where a metal surface and/or a conductive surface is removed, etched, absent, or the like. In one aspect, the temperature sensor 610 may be placed on the power substrate 606 or the base plate 602 in an area where a metal surface of the power substrate 606 or the base plate 602 has been removed or is not present. In these aspects, the temperature sensor 610 may isolate and provide a more accurate temperature reading. Of course, other locations and arrangements of the temperature sensor 610 are also contemplated.

As shown, the gate distribution network may be implemented with a PCB. The thick film circuit may be formed directly on the main power substrate 630, directly on the chassis 602, or the like. This has the benefit of reducing the component count of the power module 100 and the option of printing the

resistors

820, 822. In some aspects, this may be accomplished using thick film or deposited and patterned metal on housing sidewall 612 and/or housing cover 618 itself. The

resistors

820, 822 may be much smaller than the size of the surface mount components on the PCB because solder terminals may not be needed and the

resistors

820, 822 may be actively cooled from a cold plate, thereby minimizing the thermal size limitations of the assembly.

Fig. 35 illustrates a perspective view of a configuration including a power module and a housing according to one aspect of the present disclosure; FIG. 36 shows a side view of the arrangement of FIG. 35; FIG. 37 shows a partial perspective view of the arrangement of FIG. 35; FIG. 38 shows another partial perspective view of the configuration of FIG. 35; FIG. 39 shows another partial perspective view of the arrangement of FIG. 35; FIG. 40 shows another partial perspective view of the configuration of FIG. 35; and figure 41 shows another partial perspective view of the arrangement of figure 35.

In particular, fig. 35-40 illustrate a configuration 3500 that may be used to implement one or more of power module 100, bus bar 900, driver 400, controllers for power module 100 and driver 400, capacitor 102, sensor 980, etc. In one aspect, configuration 3500 may utilize one or more of power module 100, bus bar 900, driver 400, controllers for power module 100 and driver 400, capacitor 102, sensor 980, etc., as described herein. In one aspect, configuration 3500 can utilize one or more other types of power modules, bus bars, drivers, controllers for power modules and drivers, capacitors, sensors, and the like.

In one aspect, configuration 3500 may be implemented in a variety of power topologies (including half-bridge, full-bridge, three-phase, booster, chopper, DC-DC converter, etc. arrangements and/or topologies). In the aspect illustrated in fig. 35-40, configuration 3500 is shown as implementing a three-phase topology.

Referring specifically to fig. 35, configuration 3500 may include a housing 3502. The housing 3502 may include a top 3504, a middle portion 3506, and a bottom 3508. However, the housing 3502 may be implemented with a fewer or greater number of housing portions. In one aspect, the housing 3502 can be constructed of a synthetic material, a plastic material, a metal material, or the like. In one aspect, the housing 3502 can be constructed of a plastic material. In one aspect, the housing 3502 may be constructed of a plastic material that may be injection molded.

With further reference to fig. 35, in one aspect, top 3504 can be mechanically fastened to configuration 3500 with mechanical fasteners 3512. In other aspects, top 3504 can be secured to configuration 3500 with other components and/or configurations. In one aspect, top 3504 can include cooling slot 3510 to allow air within configuration 3500 to flow therethrough for cooling purposes.

With further reference to fig. 35, in an aspect, the middle portion 3506 can be disposed between the top portion 3504 and the bottom portion 3508. The bottom portion 3508 may be configured to receive the top portion 3504 and the middle portion 3506 to provide a housing for the various components of the configuration 3500. In an aspect, middle portion 3506 and/or bottom portion 3508 may be further configured to allow phase output 930 to extend therethrough. In other aspects implementing other topologies, middle portion 3506 and/or bottom portion 3508 may be further configured to allow other types of outputs to extend therethrough.

With further reference to fig. 35, in one aspect, the bottom portion 3508 can support the middle portion 3506. In one aspect, the bottom 3508 can include a support 3514 to support the phase output 930. In another aspect, the bottom 3508 can include supports 3514 to support other types of outputs when other topologies are implemented.

In one or more aspects, the bottom 3508 may further include an aperture 3528, the aperture 3528 configured to allow a fluid connection 3516 to the cold plate 902 to extend from the cold plate 902. In one aspect, the fluid connection 3516 may receive a source of fluid and/or deliver fluid for cooling purposes in association with the cold plate 902.

Referring to fig. 36, in one aspect, configuration 3500 may include

conductors

910, 912. In one aspect,

conductors

910, 912 may be arranged on the side of configuration 3500 opposite the side of phase output 930. In one aspect,

conductors

910, 912 may be arranged on the side of configuration 3500 opposite the side for other types of outputs for other types of topologies.

In one aspect, configuration 3500 may include a cooling fan 3518. The cooling fan 3518 may be configured to move air through the housing 3502 of the configuration 3500 to cool the various components of the configuration 3500. In one aspect, cooling fan 3518 may be located in an opening on one side of the configuration 3500 such that cooling fan 3518 moves air through the opening and also through cooling slot 3510 as shown in fig. 35.

In one aspect, configuration 3500 may include an electrical interface 3520. In one aspect, the electrical interface 3520 may connect and exchange data with one or more of the power module 100, the bus bar 900, the driver 400, the controllers for the power module 100 and the driver 400, the capacitor 102, the sensor 980, and the like. In one aspect, the data may be control signals, sensor signals, drive signals, signals to load, remove, or modify software, and the like. In an aspect, the electrical interface 3520 (or other connector along the wall) may alternatively or additionally provide low voltage (12V to 24V) power to the controller and driver 400. In particular aspects, configuration 3500 may be configured to connect to a power source at

conductors

910, 912, fully operate, control, and analyze through electrical interface 3520, and provide an output from phase output 930.

Referring to fig. 37, for ease of illustration and understanding, a configuration 3500 is shown with the top 3504 removed. In one aspect, as shown in fig. 37, intermediate portion 3506 can include a portion 3526 for receiving a mechanical fastener 3512. Fig. 37 further illustrates a controller 3522, a drive 400, and a wired connection 3524 between the controller 3522 and the drive 400.

Referring to fig. 38, for ease of illustration and understanding, a configuration 3500 is shown with the controller 3522, drive 400, and wired connection 3524 removed from the middle portion 3506. In particular, fig. 38 shows a surface for supporting the controller 3522, the driver 400, the wired connection 3524, and the like.

For ease of illustration and understanding, fig. 39 shows configuration 3500 with middle portion 3506 removed. In particular, fig. 39 illustrates an arrangement configuration of the bus bar 900, the power module 100, the cold plate 902, and the sensor 980. In particular, fig. 39 illustrates the arrangement and configuration of the bus bar 900, the power module 100, the cold plate 902, and the sensor 980 supported by the bottom 3508.

For ease of illustration and understanding, fig. 40 shows a configuration 3500 with the intermediate portion 3506 and the bus bar 900 removed. As shown in fig. 40, the arrangement of the power module 100, cold plate 902, and sensor 980 is shown for configuration 3500. In particular, fig. 40 shows an assembly 3530 for ensuring that input and output connections are attached to phase output 930 and conductor 910. In one aspect, the assembly 3530 for securing attachment can be a mechanical fastener. In one aspect, the mechanical fastener may be a female threaded assembly configured to receive a corresponding male threaded assembly. In one aspect, the mechanical fastener may be a hex nut.

For ease of illustration and understanding, fig. 41 illustrates a configuration 3500 with the intermediate portion 3506, the bus bar 900, the power module 100, the cold plate 902, and the sensor 980 removed. As shown in fig. 41, bottom portion 3508 of configuration 3500 can include a structure 3540 for connecting to middle portion 3506. As shown in fig. 41, the bottom 3508 of the configuration 3500 may include a structure 3542 for retaining at least the power module 100 and the cold plate 902. As shown in fig. 41, a bottom 3508 of configuration 3500 can include a structure 3544 for holding at least capacitor 102. In some aspects, the structure may be a rib, a reinforcement portion, a mechanical fastener receiving portion, or the like.

In one aspect, configuration 3500 can be implemented as an evaluation system, evaluation suite, test system, and the like. For the sake of brevity, this implementation is broadly defined as an evaluation suite. In particular aspects, the evaluation suite implementation of configuration 3500 may be configured to connect to a power source at

conductors

910, 912, fully operate, control and analyze through electrical interface 3520, and provide an output from phase output 930. In this regard, a user may implement an evaluation suite implementation of configuration 3500 to perform testing, modeling, etc. prior to implementing and manufacturing a system implementing power module 100 of the present disclosure. In one aspect, a user may implement an evaluation suite implementation of configuration 3500 to perform testing, modeling, etc. for a particular application of power module 100. In one aspect, the application may be a power system, a motor system, an automotive motor system, a charging system, an automotive charging system, a vehicle system, an industrial motor drive, an embedded motor drive, an uninterruptible power supply, an AC-DC power supply, a welder power supply, a military system, an inverter for wind turbines, solar panels, tidal power plants, and Electric Vehicles (EVs), a converter, and the like.

FIG. 42 illustrates a process to implement and operate a configuration including a power module. In particular, FIG. 42 illustrates a process 4200 of an implementation and operational configuration. In one aspect, process 4200 may be implemented with configuration 3500 disclosed herein.

Process 4200 may further include assembling power module 100 and associated components in housing 3502 to form configuration 3500 as shown at block 4202. In one aspect, configuration 3500 may be assembled to include one or more of power module 100, bus bar 900, driver 400, controllers for power module 100 and driver 400, capacitor 102, sensors 980, and the like. In one aspect, configuration 3500 may be assembled with one or more of power module 100, bus bar 900, driver 400, controllers for power module 100 and driver 400, capacitor 102, sensor 980, etc., as described herein. In one aspect, configuration 3500 can be assembled to include one or more other types of power modules, bus bars, drivers, controllers for power modules and drivers, capacitors, sensors, and the like.

Process 4200 may further include connecting the configuration to power source 4204. In one aspect,

conductors

910, 912 of configuration 3500 may be connected to a power source. In one aspect,

conductors

910, 912 of configuration 3500 may be connected to a DC power source.

Process 4200 may further include operation 4206 configuring 3500. In one aspect, configuration 3500 may be operated such that one or more of power module 100, bus bar 900, driver 400, controllers for power module 100 and driver 400, capacitor 102, sensor 980, etc. provide an output. In one aspect, configuration 3500 may be programmed to implement aspects of operation 4206 configuration 3500. In one aspect, a controller of configuration 3500 can be programmed to implement aspects of operating configuration 3500. In one aspect, driver 400 of configuration 3500 can be programmed to implement aspects of the operational configuration.

Process 4200 may further include measuring various operating parameters 4208 including configuration 3500 of power module 100 and associated components. In one aspect, configuration 3500 can be operated such that various internal sensors output sensor data. In one aspect, configuration 3500 can be operated and connected to an external sensor, such as an oscilloscope, computer system, or the like, that outputs sensor data. In one aspect, various sensor data may be collected by a computer system. The computer system may include a processor, memory, an operating system, and the like. In one or more aspects, the output sensor data may be based on and/or include switching losses, temperature, inductance, switching speed, overshoot, waveform analysis, etc., associated with power module 100 or other components implemented by configuration 3500. In one aspect, various operating parameters 4208 of measurement configuration 3500 may be specific to a particular application of power module 100. In one aspect, the application may be a power system, a motor system, an automotive motor system, a charging system, an automotive charging system, a vehicle system, an industrial motor drive, an embedded motor drive, an uninterruptible power supply, an AC-DC power supply, a welder power supply, a military system, an inverter for wind turbines, solar panels, tidal power plants, and Electric Vehicles (EVs), a converter, and the like.

The process 4200 may further include outputting 4210 operational parameters to the human machine interface. In one aspect, the operating parameters may be analyzed by a computer system. In one aspect, a computer system may analyze an operating parameter including sensor data to generate an output. In one aspect, the output may be provided to a human-machine interface. In one aspect, the human-machine interface may include one or more of a display, a printout, an analysis file, and the like.

Process 4200 may further include modifying aspects of configuration 4212 and repeating process 4200. In one aspect, configuration 3500 may be modified to include additional components consistent with the present disclosure. In one aspect, configuration 3500 may be modified to include fewer components consistent with the present disclosure. In one aspect, the controller program of configuration 3500 can be modified. In one aspect, driver 400 program for configuration 3500 may be modified. In one aspect, the operating voltage or current of configuration 3500 can be modified.

In one or more aspects, the power module 100 of the present disclosure may be configured to operate with various performance characteristics. However, the performance characteristics may not necessarily be limited to the specific implementations and aspects set forth in this disclosure. Various performance characteristics are described below, along with exemplary details of exemplary configurations and implementations that may provide, in part, the performance characteristics. However, the various performance characteristics should not be limited to the specifically disclosed aspects of power module 100. In certain aspects, various performance characteristics and example fabric implementations may be associated with lower voltage implementations. In one aspect, a lower voltage implementation may be defined to include implementations that operate below 3.4 Kv. In one aspect, a lower voltage implementation may be defined to include implementations that operate below 3.3 Kv. In one aspect, a lower voltage implementation may be defined to include implementations that operate below 3.0 Kv. In one aspect, lower voltage implementations include implementations that operate in the ranges of 100v-3400v, 100v-3300v, 100v-3000v, 100v-2500v, 100v-2000v, and 100v-1700 v. In one aspect, a higher voltage implementation may be defined to include implementations that operate at greater than 3.3 Kv. In one aspect, a higher voltage implementation may be defined to include implementations that operate at greater than 3.0 Kv. In one aspect, higher voltage implementations include implementations operating in the range of 3400v-5000v, 3300v-5000v, 3000v-5000v, 3400v-10000v, 3300v-10000v, 3000v-10000 v. In this regard, aspects of the present disclosure that achieve a lower voltage implementation as defined herein may be distinguished from a higher voltage implementation as defined herein. For example, in some aspects, a lower voltage implementation may be distinguished from a higher voltage implementation based on one or more of: spacing between conductors and/or terminals of power module 100, configuration of power loops within power module 100, basic layout of power module 100, current carrying capacity and/or capability of power module 100, substrate thickness of power module 100, terminal layout of power module 100, thermal performance of power module 100, configuration for addressing creepage issues of power module 100, configuration for addressing clearance issues of power module 100, insulation configuration of power module 100, bus bar configuration of power module 100, and the like. In this regard, at least one or more of the above-described aspects may distinguish a low voltage implementation from a high voltage implementation.

In one or more aspects, the power module 100 of the present disclosure may be configured to operate with the following parasitic stray inductances. In one aspect, the total stray inductance value of the critical power switches in the loop 114 shown in fig. 1B of the power module 100 may be less than 12 (nH). In one aspect, the total stray inductance value of the critical power switches in the loop 114 shown in fig. 1B of the power module 100 may be less than 11 (nH). In one aspect, the total stray inductance value of the critical power switches in the loop 114 shown in fig. 1B of the power module 100 may be less than 7 (nH). In one aspect, the total stray inductance value of the critical power switches in the loop 114 shown in fig. 1B of the power module 100 may be less than 4 (nH). In one aspect, the total stray inductance value of the critical power switches in the loop 114 shown in fig. 1B of the power module 100 may be less than 3 (nH).

In one aspect, the total stray inductance values of the critical power switches in the loop 114 shown in fig. 1B of the power module 100 may have a range of 12(nH) to 2(nH), 10(nH) to 2(nH), and 4(nH) to 2 (nH).

In one aspect, for a power module 100 having a particular loop length and/or cross-sectional area, the total stray inductance value of the critical power switches in the loop 114 shown in fig. 1B of the power module 100 may be less than 4 (nH). In one aspect, the total stray inductance value of the critical power switches in the loop 114 shown in fig. 1B of the power module 100 may be less than 8(nH) for a power module 100 having a particular loop length and/or cross-sectional area. In one aspect, the total stray inductance value of the critical power switches in the loop 114 shown in fig. 1B of the power module 100 may be less than 12(nH) for a power module 100 having a particular loop length and/or cross-sectional area. In one aspect, the total stray inductance value of the critical power switches in the loop 114 shown in fig. 1B of the power module 100 may have a range of 4(nH) to 2(nH) for a power module 100 having a particular loop length and/or cross-sectional area. In one aspect, the total stray inductance value of the critical power switches in the loop 114 shown in fig. 1B of the power module 100 may have a range of 8(nH) to 4(nH) for a power module 100 having a particular loop length and/or cross-sectional area. In one aspect, the total stray inductance value of the critical power switches in the loop 114 shown in fig. 1B of the power module 100 may have a range of 12(nH) to 8(nH) for a power module 100 having a particular loop length and/or cross-sectional area.

In one or more aspects, the power module 100 of the present disclosure may be configured to operate at the following switching speeds.

In one aspect, the switching speed of the power module 100 may be less than 100(A/ns) di/dt. In one aspect, the switching speed of the power module 100 may be less than 90(A/ns) di/dt. In one aspect, the switching speed of power module 100 may be less than 80(A/ns) di/dt. In one aspect, the switching speed of the power module 100 may be less than 50(A/ns) di/dt. In one aspect, the switching speed of power module 100 may be less than 35(A/ns) di/dt.

In one aspect, the switching speed of power module 100 may have a range of 30(A/ns) di/dt to 100(A/ns) di/dt. In one aspect, the switching speed of power module 100 may have a range of 30(A/ns) di/dt to 70(A/ns) di/dt. In one aspect, the switching speed of power module 100 may have a range of 40(A/ns) di/dt to 90(A/ns) di/dt. In one aspect, the switching speed of power module 100 may have a range of 30(A/ns) di/dt to 40(A/ns) di/dt.

In one aspect, the switching speed of the power module 100 may be less than 120(V/ns) dv/dt. In one aspect, the switching speed of the power module 100 may be less than 100(V/ns) dv/dt. In one aspect, the switching speed of the power module 100 may have a range of 20(V/ns) dv/dt to 100(V/ns) dv/dt. In one aspect, the switching speed of the power module 100 may have a range of 40(V/ns) dv/dt to 100(V/ns) dv/dt. In one aspect, the switching speed of the power module 100 may have a range of 60(V/ns) dv/dt to 100(V/ns) dv/dt. In one aspect, the switching speed of power module 100 may have a range of 80(V/ns) dv/dt to 100(V/ns) dv/dt. In one aspect, the switching speed of power module 100 may have a range of 60(V/ns) dv/dt to 80(V/ns) dv/dt. In one aspect, the switching speed of the power module 100 may have a range of 40(V/ns) dv/dt to 60(V/ns) dv/dt. In one aspect, the switching speed of the power module 100 may have a range of 20(V/ns) dv/dt to 40(V/ns) dv/dt. In one aspect, the switching speed of power module 100 may have a range of 60(V/ns) dv/dt to 80(V/ns) dv/dt, 40(V/ns) dv/dt to 60(V/ns) dv/dt, 20(V/ns) dv/dt to 40(V/ns) dv/dt.

In one or more aspects, the power module 100 of the present disclosure may be configured to operate with the following switching losses.

In one aspect, the switching losses of the power module 100 may be less than 0.5(mJ/a) millijoules per ampere. In one aspect, the switching losses of the power module 100 may be less than 0.4(mJ/a) millijoules per ampere. In one aspect, the switching losses of the power module 100 may be less than 0.25(mJ/a) millijoules per ampere. In one aspect, the switching losses of the power module 100 may have a range of 0.5(mJ/a) millijoules per ampere to 0.25(mJ/a) millijoules per ampere. In one aspect, the switching losses of the power module 100 may have a range of 0.25(mJ/a) millijoules per ampere to 0.4(mJ/a) millijoules per ampere.

In aspects of the present disclosure, the width and length of the power module 100 may be scalable, such that the power module 100 may be configured to be wider (more power devices 302, less inductance) or smaller (smaller size, lower cost). The following table shows various ranges of implementations, including the smallest practical width and the largest expected size (roughly square footprint). Power device utilization may be defined as a percentage calculated from the ratio of the power device area to the total power module area. In one aspect, the area used in the present disclosure is calculated by multiplying the width by the length. In this regard, the width may be defined along an axis extending across the power module 100, as shown in fig. 11; and the length may be defined along an axis perpendicular to the width, as shown in fig. 11. The following table provides a specific set of non-limiting specifications.

In one aspect of the present disclosure, the power module 100 may have a power device utilization area in the range of 7% to 10%. In one aspect of the present disclosure, the power module 100 may have a power device utilization area in the range of 6% to 8%. In one aspect of the present disclosure, the power module 100 may have a power device utilization area in the range of 5% to 7%.

In various aspects, the height of the power module 100 may also be scalable. In this case, the power module 100 may be configured to be as thin as possible to minimize inductance. The height may be set based on (a) the creepage and clearance specifications required for 1700V operation, (B) the height of the wire bonds, and (C) the type of encapsulation material used. For the lower range voltage module (650V), some design changes may be made to reduce the height. In contrast, the power module 100 can be made higher for higher range voltage devices. In various aspects, height, as used in this disclosure, is defined as being perpendicular to the width and length. Referring to fig. 4A, an exemplary height of power module 100 is shown. The height of the power module may be in the range of 7mm to 30mm, 9mm to 11mm, 11mm to 13mm, 13mm to 15mm, 15mm to 17mm, 17mm to 19mm, 19mm to 21mm, 21mm to 23mm, and 23mm to 27 mm. The following table provides a specific set of non-limiting specifications.

	Maximum voltage	Height
				(V)	(mm)
Aspect 1	650	10.00
			Aspect 2	1700	15.75
Aspect 3	3300	25.00

Power contact parameter

The power contacts or

terminals

106, 108, 110 may be configured and constructed to be wide and fill as much as possible of the maximum percentage of the power module 100 at a given practical voltage creepage/clearance limit. The width ratio compares the width of the contacts or

terminals

106, 108, 110 with the width of the power module 100. In one aspect, the width of the power module 100 may be the width of the chassis 602. In one aspect, the width of the power module 100 may be the width of the one or more power substrates 606. In one aspect, the width of the power module 100 may be the width between the housing sidewalls 612. In one aspect, the width of power module 100 may be the width of housing cover 618. The length ratio takes the contact length of all three contacts or

terminals

106, 108, 110 and compares it to the length of the total power module 100. In one aspect, the length of the power module 100 may be the length of the chassis 602. In one aspect, the length of the power module 100 may be the length of the one or more power substrates 606. In one aspect, the length of the power module 100 may be the length between the housing sidewalls 612. In one aspect, the length of power module 100 may be the length of housing cover 618. The area ratio compares the total contact area to the total power module 100 area. In one aspect, the area of the power module 100 may be the area of the base plate 602. In one aspect, the area of the power module 100 may be the area of one or more power substrates 606. In one aspect, the area of the power module 100 may be the area between the housing sidewalls 612. In one aspect, the area of the power module 100 may be the area of the housing cover 618. The substrate ratio compares the total contact substrate width to the width of the power module 100. This assumes a solder fillet around the substrate. In one aspect, the width of the power module 100 may be the width of the chassis 602. In one aspect, the width of the power module 100 may be the width of the one or more power substrates 606. In one aspect, the width of the power module 100 may be the width between the housing sidewalls 612. In one aspect, the width of power module 100 may be the width of housing cover 618. The following table provides a specific set of non-limiting specifications.

In one aspect, the power module 100 may have a terminal area ratio greater than 20%. In one aspect, the power module 100 may have a terminal area ratio greater than 25%. In one aspect, the power module 100 may have a terminal area ratio greater than 30%. In one aspect, the power module 100 may have a terminal area ratio in the range of 20% to 25%. In one aspect, the power module 100 may have a terminal area ratio in the range of 25% to 30%. In one aspect, power module 100 may have a terminal area ratio in the range of 30% to 35%.

In one aspect, the power module 100 may have a base ratio in the range of 70% to 80%. In one aspect, the power module 100 may have a base ratio in the range of 80% to 90%. In one aspect, the power module 100 may have a base ratio in the range of 90% to 95%.

In various aspects, the substrate 636 can be configured to "feather" or "finger" the legs of the contacts. In some aspects, the separate legs of the base 636 may provide more space for solder to chamfer around the sides of the connector, thereby increasing strength in multiple directions and axes. The separate substrate 636 may distribute stress and may improve reliability.

The vertical offset 702 of the V + and V-power contacts may be used to minimize the overall loop inductance of the system by reducing the need for bends or offsets in the external bus bar 900. In some aspects, the reduced complexity of the bus bar 900 may also reduce cost. In one aspect, the vertical offset 702 may be 3.25mm (metal thickness 3mm, and laminate isolation 0.25 mm). In other aspects, the vertical offset 702 may have the following practical range: 2mm-3mm, 3mm-4mm, 4mm-5mm and 5mm-6 mm. The following table provides a specific set of non-limiting specifications.

Substrate parameters

The power substrate 606 may also be configured to be wide and as full as possible of the power device 302. Aspects of the present disclosure include high device area/substrate area utilization. The pitch of the power devices 302 may be determined by heat dissipation, thermal performance, process design rules for best manufacturability, and the like. The power device ratio compares the active device area to the total power substrate 606 width. In this regard, the width may be defined along an axis extending through the plurality of power devices 302, as shown in fig. 11. A portion of the width of the power substrate 606 may be used for the over-current and temperature sensor 610. In some aspects, the power device ratio percentage number may be increased without these features. In one aspect, the power module 100 may have an active device area greater than 60%. In one aspect, the power module 100 may have an active device area greater than 65%. In one aspect, the power module 100 may have an active device area greater than 70%. In one aspect, the power module 100 may have an active device area of 60% to 65%. In one aspect, the power module 100 may have an active device area of 65% to 70%. In one aspect, the power module 100 may have an active device area of 70% to 75%. The following table provides a specific set of non-limiting specifications.

In some aspects, the metal thickness of the power substrate 606 may be configured as follows. In various aspects, the thickness of the metal may be a compromise in thermal performance, package resistance, cost, and the like. In one aspect, the metal thickness of the power substrate 606 may be less than 0.5 mm. In one aspect, the metal thickness of the power substrate 606 may be less than 0.3 mm. In one aspect, the metal thickness of the power substrate 606 may be 0.2 mm. In one aspect, the metal thickness of the power substrate 606 may be in the range of 0.1mm to 0.6mm, 0.2mm to 0.3mm, 0.3mm to 0.4mm, 0.4mm to 0.5mm, and 0.5mm to 0.6 mm.

Wire bonding parameters

The power wire bonds 628 may be any of the diameters listed in the table below. In one aspect, a 12mil (0.30mm) diameter aluminum bond may be used. In one aspect, the diameter of the bond may be 0.15mm to 0.25mm, 0.2mm to 0.3mm, 0.25mm to 0.35mm, 0.35mm to 0.45mm, and 0.45mm to 0.55 mm. In other aspects, larger diameter aluminum bonds and larger diameter copper bonds may be utilized. In a further aspect, soldered copper lugs may be used for maximum current capability. In one aspect, the diameter of the power wire bonds 628 may be in the range of 0.15mm to 0.6 mm. In one aspect, the diameter of the power wire bonds 628 may be in the range of 0.19mm to 0.52 mm. In one aspect, the diameter of the power wire bonds 628 may be in the range of 0.2mm to 0.51 mm. The following table provides a specific set of non-limiting specifications.

In one aspect, the power wire bonds 628 may include aluminum wire bonds, aluminum tape bonds, copper wire bonds, copper tape bonds, copper soldering, copper sintered lugs, and the like, as shown in the table below.

Material	Implementation of
		Aluminium	Lead wire
Aluminium	Belt
		Copper (Cu)	Lead wire
Copper (Cu)	Belt
		Copper (Cu)	Soldering/sintering lug

In a particular aspect, wire bonds 628 may be configured to have the shapes of the loops listed in the table below. In various aspects, the loop geometry can be configured with as low a profile and as short a length as possible to minimize resistance. The bond length is determined by the placement of the die of the power device 302 and the configuration of the power module 100. In one aspect, the wire bond length may have a range of 4mm to 12 mm. In one aspect, the wire bond length may have a range of 5mm to 11 mm. In one aspect, the wire bond loop height can have a range of 0.5mm to 3 mm. In one aspect, the wire bond loop height can have a range of 1mm to 2.5 mm. The following table provides a specific set of non-limiting specifications.

	Length of bonding	Height of loop
				(mm)	(mm)
Aspect 1	5.5	1.2
			Aspect 2	10.0	2.0

In one aspect, the configuration may utilize an increased or maximum number of bonds 628 per power device 302. The number of bonds 628 may depend on the size of the die, the pad area, and the bonding diameter. The following table provides a specific set of non-limiting specifications. In particular, the values listed below are for different size implementations of the MOSFET.

	Bonding of each power device
			(numbering)
Aspect 1	4
		Aspect 2	10

In one aspect, each power device 302 may be implemented with 3 to 12 bonds 628. In one aspect, each power device 302 may be implemented with 4 to 10 bonds 628. In one aspect, each power device 302 may be implemented with 4 or more bonds 628. In one aspect, each power device 302 may be implemented with more than 6 bonds 628. In one aspect, each power device 302 may be implemented with more than 8 bonds 628. In one aspect, each power device 302 may be implemented with more than 10 bonds 628.

Inductance and switching parameters

The inductance of the power module 100 may be determined by the total loop length, cross-sectional area, flux cancellation, etc. In various aspects, the power module 100 may be configured to minimize inductance by configuring the power module 100 to have a low profile, using wide power contacts, and achieving some flux cancellation in the power module 100 when the loop wraps back on itself. The width of the power module 100 may also have a large effect on the inductance.

The following table determines inductances for other configurations based on the specific implementation of the power module 100 and provides inductance and other simulation results. The lowest inductance configuration assumes that the power module 100 can also be configured to be thinner (i.e., 650V thickness as previously listed). The dV/dt max is not limiting for power module 100.

The di/dt value is calculated as the theoretical maximum assuming 1200V devices and 800V bus. This may result in a possible overshoot of maximum 400V. In this regard, the calculations assume a 2nH bus loop inductance, which is added in series with the power module 100. Given this, in one aspect, the fastest speed at which the power module 100 can switch is listed in the following table.

In one or more aspects, losses have been determined by testing a particular implementation using very aggressive switching. In one aspect, the loss can have a range of 0.25mJ/A to 0.050mJ/A, 0.25mJ/A to 0.040mJ/A, and 0.25mJ/A to 0.035 mJ/A. The following table provides a specific set of non-limiting specifications.

	Numbering of devices	Inductance	Maximum dV/dt	Maximum di/dt	Loss of power
							(each position)	(nH)	(V/ns)	(A/ns)	(mJ/A)
Aspect 1	3	10.0	＜100*	33.33
						Aspect 2	5	6.7	＜100*	45.98	0.3
Aspect 3	10	3.2	＜100*	76.92
						Aspect 4	10	2.5	＜100*	88.89

In aspect 1, the total stray inductance value of the power module 100 may have a range of 9(nH) and 11 (nH). In aspect 2, the total stray inductance value of the power module 100 may have a range of 6(nH) to 7 (nH). In aspect 3, the total stray inductance value of the power module 100 may have a range of 3(nH) to 4 (nH). In aspect 4, the total stray inductance value of the power module 100 may have a range of 2(nH) to 3 (nH).

Fig. 43-58 illustrate a power module according to an aspect of the present disclosure.

In this regard, the thermal performance of the power module 100 of fig. 43-58 may be configured for maximizing heat flux, reducing system size, reducing cost, etc., due to the high current density of the power device 302 and other components. In particular, the power module 100 shown in fig. 43-58 may include any one or more aspects disclosed herein. In addition, the power module 100 of fig. 43-58 may be further configured for direct cooling to maximize heat flux, reduce system size, reduce cost, and the like. Additionally, utilizing the power module 100 to achieve direct cooling may eliminate or eliminate the thermal interface between the power module 100 and the cold plate or heat spreader and any materials or structures disposed between the top surface of the cold plate and the cooling fluid. In this regard, prior art implementations include a Thermal Interface Material (TIM) disposed in the interface between the power module and the cold plate, and the use of the TIM may have problems with application to surfaces, aging, pump-out, and the like. By directly cooling the bottom plate 602 surface of the power module 100, a greater amount of heat flux may be handled in the power module 100 and associated structures.

In one aspect, the power module 100 may include a plurality of pin fins 642. In one aspect, the plurality of pin fins 642 may be configured to transfer heat from one or more components of the power module 100. In one aspect, the plurality of pin fins 642 may be configured to cool one or more components of the power module 100. In one aspect, the plurality of pin fins 642 may be configured to directly cool one or more components of the power module 100. In one aspect, the plurality of pin fins 642 may be configured to directly cool one or more components of the power module 100 in conjunction with the cold plate 902. In one aspect, the plurality of pin fins 642 can be configured to allow coolant to pass through the pin fins 642.

In one aspect, the base plate 602 can include a plurality of pin fins 642. In one aspect, a plurality of pin fins 642 can be disposed on a surface of the base plate 602. In one aspect, a plurality of pin fins 642 can be disposed on the bottom surface of the base plate 602. In one aspect, a plurality of pin fins 642 can be disposed on the bottom surface of the base plate 602 on a side of the base plate 602 opposite the housing sidewall 612.

In one aspect, the plurality of pin fins 642 can form channels parallel to the axis 654. In one aspect, the plurality of pin fins 642 can form channels parallel to the axis 656. In one aspect, the plurality of pin fins 642 can form channels that are staggered or angled relative to the axis 654. In one aspect, the plurality of pin fins 642 can form channels that are staggered or angled relative to the axis 656.

The arrangement of the plurality of pin fins 642 and the channels disposed between the plurality of pin fins 642 can be configured to increase or facilitate movement of a coolant around the plurality of pin fins 642, heat transfer from the plurality of pin fins 642 to the coolant, reduce a surface layer and/or barrier layer adjacent the plurality of pin fins 642 to increase heat transfer, and the like.

Referring to fig. 46, 50, and 54, each pin fin 642 may be integrally formed with the base plate 602. In other aspects, each pin fin 642 can be attached to the base plate 602 by welding, adhesive, brazing, or the like. In one aspect, each pin fin 642 can include a base 644 connected to the base plate 602.

In one aspect, the pin fins 642 can be formed from the same material as the base plate 602. In one aspect, to reduce weight, the pin fins 642 can be formed from the same material as the base plate 602. In one aspect, the pin fins 642 can be formed from a material that is different from the material of the base plate 602. In one aspect, the pin fins 642 can be formed from a metallic material. In one aspect, the pin fins 642 can comprise copper. In one aspect, the pin fins 642 can be formed of copper.

In one aspect, each pin fin 642 can include one or more surfaces 646 extending from a base 644. In one aspect, each pin fin 642 can have a termination surface 648. In one aspect, the termination surface may be flat, contoured, non-flat, pointed, curved, or the like. In one aspect, one or more surfaces 646 can taper as one or more surfaces 646 extend to a stop surface 648. In one aspect, when one or more surfaces 646 extend to the termination surface 648, the one or more surfaces 646 can be perpendicular to the surface of the base plate 602.

In one aspect, each pin fin 642 can have a cross-sectional shape with respect to a plane parallel to the surface of the base plate 602. In this regard, the pin fins 642 can have a square cross-sectional shape, a rectangular cross-sectional shape, a circular cross-sectional shape, a contoured cross-sectional shape, an elliptical cross-sectional shape, a symmetrical cross-sectional shape (along one or more axes), an asymmetrical cross-sectional shape (along one or more axes), an airfoil cross-sectional shape, or the like. Further, the pin fins 642 may have a first one of the above-described shapes, a plurality of the above-described shapes, or the like. However, the pin fins 642 may be implemented with any shape of structure on the base plate 602 of the power module 100.

In one aspect, the termination surface 648 may have a cross-sectional shape with respect to a plane parallel to the surface of the base plate 602. In this regard, the termination surface 648 may have a square cross-sectional shape, a rectangular cross-sectional shape, a circular cross-sectional shape, a contoured cross-sectional shape, an elliptical cross-sectional shape, a symmetric cross-sectional shape (along one or more axes), an asymmetric cross-sectional shape (along one or more axes), an airfoil cross-sectional shape, and the like.

In one aspect, the base 644 may have a cross-sectional shape with respect to a plane parallel to the surface of the bottom plate 602. In this regard, the base 644 may have a square cross-sectional shape, a rectangular cross-sectional shape, a circular cross-sectional shape, a contoured cross-sectional shape, an elliptical cross-sectional shape, a symmetric cross-sectional shape (along one or more axes), an asymmetric cross-sectional shape (along one or more axes), an airfoil cross-sectional shape, and the like.

In one aspect, the base 644 may have the same cross-sectional shape as the cross-sectional shape of the termination surface 648. In one aspect, the base 644 may have the same cross-sectional shape and size as the termination surface 648. In one aspect, the base 644 may have the same cross-sectional shape and different dimensions as the termination surface 648. In one aspect, the base 644 may have a cross-sectional shape that is different from the cross-sectional shape of the termination surface 648.

In one aspect, the pin fins 642 can be formed using one or more operations (including machining, forging, molding, stamping, deforming, etc.) to form a fin pattern of the pin fins 642 as shown; and the pin fins 642 may be attached using welding, adhesives, brazing, and the like. However, the pin fins 642 can be formed using any manufacturing method and/or technique known to those of ordinary skill in the art for creating fins and pin surfaces on the base plate 602.

In one aspect, referring to FIG. 46, the diameter or length L of the pin fins 642 defined along the surface of the base 644 parallel to the base plate 602 can be 1mm-8mm, 1mm-2mm, 2mm-3mm, 3mm-4mm, 4mm-5mm, 5mm-6mm, 6mm-7mm, or 7mm-8 mm. These dimensions may be equally applicable to all configurations of the pin fins 642 disclosed herein.

In one aspect, referring to FIG. 46, the height H of pin fin 642, defined perpendicular to the surface of base plate 602 from base 644 to termination surface 648, can be 1mm-12mm, 2mm-10mm, 4mm-8mm, 1mm-2mm, 2mm-3mm, 3mm-4mm, 4mm-5mm, 5mm-6mm, 6mm-7mm, 7mm-8mm, 8mm-9mm, 9mm-10mm, 10mm-11mm, or 11mm-12 mm. These dimensions may be equally applicable to all configurations of the pin fins 642 disclosed herein.

In one aspect, referring to fig. 46, the pin-to-pin spacing S of pin fins 642 can be defined by a central axis of adjacent pin fins 642 perpendicular to base plate 602, and the spacing S can be 2mm-12mm, 4mm-10mm, 2mm-3mm, 3mm-4mm, 4mm-5mm, 5mm-6mm, 6mm-7mm, 7mm-8mm, 8mm-9mm, 9mm-10mm, 10mm-11mm, or 11mm-12 mm. These dimensions may be equally applicable to all configurations of the pin fins 642 disclosed herein.

Fig. 43 shows a perspective bottom side view of a power module according to an aspect of the present disclosure; FIG. 44 shows a side view of the power module according to FIG. 43; FIG. 45 shows a bottom side view of the power module according to FIG. 43; and fig. 46 shows a partial perspective bottom side view of the power module according to fig. 43.

Referring to fig. 43-46, each pin fin 642 can include one or more surfaces 646 extending from a base 644. In one aspect, the pin fins 642 can have a termination surface 648. In one aspect, the termination surface may be contoured, non-flat, or the like. In one aspect, one or more surfaces 646 can taper as one or more surfaces 646 extend to a stop surface 648.

In one aspect, the termination surface 648 may have a cross-sectional shape with respect to a plane parallel to the surface of the base plate 602. In this regard, the termination surface 648 may have an asymmetric cross-sectional shape, a wing-shaped cross-sectional shape, or the like.

In one aspect, the base 644 may have a cross-sectional shape with respect to a plane parallel to the surface of the bottom plate 602. In this regard, the base 644 may have a square sectional shape, a rectangular sectional shape, or the like.

In one aspect, the plurality of pin fins 642 can form channels parallel to the axis 654. In one aspect, the plurality of pin fins 642 can form channels parallel to the axis 656.

FIG. 47 illustrates a perspective bottom side view of a power module according to one aspect of the present disclosure; FIG. 48 shows a side view of the power module according to FIG. 47; fig. 49 shows a bottom side view of the power module according to fig. 47; and fig. 50 shows a partial perspective bottom side view of the power module according to fig. 47.

Referring to fig. 47-50, each pin fin 642 can include one or more surfaces 646 extending from a base 644. In one aspect, each pin fin 642 can have a termination surface 648. In one aspect, the termination surface may be flat or the like. In one aspect, one or more surfaces 646 can taper as one or more surfaces 646 extend to a stop surface 648.

In one aspect, the termination surface 648 may have a cross-sectional shape with respect to a plane parallel to the surface of the base plate 602. In this regard, the termination surface 648 may have a circular cross-sectional shape, a contoured cross-sectional shape, an elliptical cross-sectional shape, a symmetrical cross-sectional shape, or the like.

In one aspect, the base 644 may have a cross-sectional shape with respect to a plane parallel to the surface of the bottom plate 602. In this regard, the base 644 may have a circular cross-sectional shape, a contoured cross-sectional shape, an elliptical cross-sectional shape, a symmetrical cross-sectional shape, or the like.

In one aspect, the base 644 may have the same cross-sectional shape as the cross-sectional shape of the termination surface 648. In one aspect, the base 644 may have the same cross-sectional shape and different dimensions as the termination surface 648.

In one aspect, the plurality of pin fins 642 can form channels parallel to the axis 654. In one aspect, the plurality of pin fins 642 can form channels parallel to the axis 656. In one aspect, the bases 644 of adjacent pin fins 642 can converge, join, connect, meet, or the like.

Fig. 51 illustrates a perspective bottom side view of a power module according to an aspect of the present disclosure; FIG. 52 shows a side view of the power module according to FIG. 51; FIG. 53 shows a bottom side view of the power module according to FIG. 51; and fig. 54 shows a partial perspective bottom side view of the power module according to fig. 51.

Referring to fig. 51-54, each pin fin 642 can include one or more surfaces 646 extending from a base 644. In one aspect, each pin fin 642 can have a termination surface 648. In one aspect, the termination surface may be flat or the like. In one aspect, one or more surfaces 646 can taper as one or more surfaces 646 extend to a stop surface 648.

In one aspect, the termination surface 648 may have a cross-sectional shape with respect to a plane parallel to the surface of the base plate 602. In this regard, the termination surface 648 may have a square cross-sectional shape, a rectangular cross-sectional shape, a symmetrical cross-sectional shape, and the like.

In one aspect, the base 644 may have a cross-sectional shape with respect to a plane parallel to the surface of the bottom plate 602. In this regard, the base 644 may have a square sectional shape, a rectangular sectional shape, a symmetrical sectional shape, or the like.

Fig. 55 illustrates a perspective bottom side view of a power module according to an aspect of the present disclosure; FIG. 56 shows a side view of the power module according to FIG. 55; and fig. 57 shows a bottom side view of the power module according to fig. 55.

Referring to fig. 55-57, each pin fin 642 can include one or more surfaces 646 extending from a base 644. In one aspect, each pin fin 642 can have a termination surface 648. In one aspect, the termination surface may be flat or the like. In one aspect, one or more surfaces 646 can taper as one or more surfaces 646 extend to a stop surface 648.

In one aspect, the base 644 may have the same cross-sectional shape as the cross-sectional shape of the termination surface 648. In one aspect, the base 644 may have the same cross-sectional shape and size as the termination surface 648.

In one aspect, the plurality of pin fins 642 can form channels that are staggered or angled relative to the axis 654. In one aspect, the plurality of pin fins 642 can form channels that are staggered or angled relative to the axis 656.

Referring to fig. 58, a power module 100 utilizing pin fins 642 for direct cooling may be placed on and/or in the cold plate 902. Specifically, fig. 58 illustrates one power module 100 utilizing the disclosed pin fins 642 for direct cooling. In this regard, implementations of fig. 58 may include one, more, or all of the power modules 100 that utilize the disclosed pin fins 642 for direct cooling. In one aspect, the power modules 100 may be placed on both sides of the cold plate 902. In this regard, the power modules 100 disposed on both sides of the cold plate 902 may maximize power density, reduce complexity, and the like. In one aspect, the power module 100 may be placed on one side of the cold plate 902. Thus, the power module 100 may be directly cooled using the pin fins 642, the cold plate 902, or the like. As further described herein, the directly cooled power module 100 may exhibit significantly higher thermal performance.

In one aspect, the cold plate 902 may contain any number of power modules 100 in a row on the top of the cold plate 902 and the bottom of the cold plate 902, depending on the desired topology. In one aspect, the cold plate 902 may contain any number of power modules 100 in a row on one side of the cold plate 902, depending on the desired topology. In this regard, the cold plate 902 may be lengthened or shortened to match multiple power modules 100.

As further shown in fig. 58, a seal 908 may be disposed between the power module 100 and the cold plate 902. The seal 908 may be an O-ring, gasket, or the like. In some aspects, the seal 908 may be an epoxy, RTV silicone (room temperature vulcanizing silicone), similar sealing materials, or the like. In other aspects, the seal 908 may be formed by welding, brazing, etc., the base plate 602 directly to the cold plate 902.

In one aspect, the cold plate 902 may have a fluid connection 3516, which fluid connection 3516 may be configured to receive a source of cooling fluid and/or deliver cooling fluid for cooling purposes in association with the cold plate 902. In one aspect, the fluid connection 3516 can include threaded fittings, flange fittings, quick-connect fittings, hose barb fittings, welded tubes (welded tubes), and the like. In one aspect, the cold plate 902 may have inlets, outlets, fluid channels, etc., which may be configured to evenly distribute fluid flow to the power module 100. The cold plate 902 may further include other considerations for mounting and sealing the power module 100 and mounting the cold plate 902 assembly itself to another structure in an application, such as an inverter, converter, etc.

In one aspect, the power module 100 of fig. 43-58 can be inserted into, implemented with, configured with, etc. an application. The application may be a system implementing the power module 100 of fig. 43-58. The application may be a power system, a motor system, an automotive motor system, a charging system, an automotive charging system, a vehicle system, an industrial motor drive, an embedded motor drive, an uninterruptible power supply, an AC-DC power supply, a welder power supply, a military system, an inverter for a wind turbine, a solar panel, a tidal power plant, and an Electric Vehicle (EV), a converter, and the like.

In particular, fig. 59 shows an inverter 990 that may be implemented as a three-phase inverter. In some aspects, the inverter 990 may be configured as two separate three-phase inverters, one three-phase inverter, one full bridge, one half bridge, or the like. In one aspect, the inverter 990 may be configured with six dedicated half-bridges. In one aspect, the above-described configuration can be constructed and arranged with connections external to the inverter 990. In one aspect, the above-described configurations may include different versions of power module 100 and/or other assembly components. However, the various features described herein with reference to fig. 59 may be implemented with any of the applications described herein. With further reference to fig. 59, the inverter 990 may include the phase output 930, the sensor 980, the capacitor 102, the cold plates 902, the fluid connections 3516, the PCB 936, the bus bar 900, and the like, as described in detail herein.

In one aspect, the phase output 930 may be stamped, laser cut, or the like. In one aspect, phase output 930 may be formed from a metal that may include copper, may be copper, and/or may include other metals. In one aspect, phase output 930 may include a bend for size optimization. In one aspect, phase output 930 may include an L-shaped bend for size optimization. In one aspect, phase output 930 may include a 90 ° bend for size optimization. In one aspect, the phase output 930 may include threaded holes for housing mounting, stress relief, and the like.

In one aspect, sensor 980 may include current sensing of each output terminal of phase output 930. In one aspect, the sensor 980 may be configured to operate in conjunction with a closed loop system to address signal quality, etc. In other aspects, the inverter 990 may be operated open loop to reduce cost and size.

In one aspect, the PCB 936 may be implemented for signal conditioning. In one aspect, the PCB 936 may be implemented for interconnection. In one aspect, the PCB 936 may be implemented for signal conditioning and interconnection.

In one aspect, the capacitor 102 may be configured as a rectangular block to allow better utilization of space. In one aspect, the capacitor 102 may be configured with an integrated bus bar 900 to connect the power module 100 to the capacitor 102, as described herein. In one aspect, the capacitor 102 may be a polypropylene film capacitor.

Fig. 60 further illustrates an inverter 990 and a plurality of housing assemblies 992. In one aspect, the plurality of housing components 992 may include sheet metal portions, vents 984, powder coatings, solid front and welded edges for EMI, snap caps 988, composite material portions, plastic material portions, handles 986, ground portions, standoffs, cooling port openings, embossed terminal markings, windows for displaying components such as a controller, and the like.

In one aspect, snap cap 988 may comprise a synthetic material, such as plastic. In one aspect, snap cap 988 may be molded. In one aspect, snap cover 988 may include a captive fastener portion to facilitate attachment. For example, snap cap 988 may include a captive hex nut to facilitate connection. In one aspect, the inverter 990 may include various arrangements and/or configurations of the phase outputs 930 and snap caps 988, and these configurations may be built into the inverter 990.

Referring to fig. 61, two versions of the power module were tested. The first version of the power module is implemented as a 1200V half-bridge power module with a maximum case temperature rating of 125 ℃ (degrees celsius). At a maximum junction temperature of 175 ℃, the drain-source on-resistance of the power module is 4.6mQ (milliohms). The power module is implemented with a flat copper backplane mounting surface.

The second version of the power module utilizes the same power supply arrangement 302 and implements a directly cooled copper pin fin base plate, the pin fins 642 being disposed on the base plate 602 as disclosed herein with reference to fig. 43-58 and the associated description.

A flat backplane version of the power module requires the application of a Thermal Interface Material (TIM) between the power module and a heat spreader or cold plate to fill any voids in the thermal path. The effect of the TIM provides additional thermal resistance between the power module housing and the cold plate. The directly cooled power module includes the pin fins 642 disclosed herein with reference to fig. 43-58 and the associated description, and is designed to be in direct contact with the coolant without the need for a TIM.

The results show that the thermal impedance is reduced when using the direct cooling power module disclosed herein with reference to fig. 43-58 and the associated description, as compared to a flat backplane power module. For the flat backplane version of the power module, tests were performed using a custom micro-deformed liquid cooled cold plate with a coolant temperature of 25 ℃ and a high performance TIM. The maximum power consumption was measured at each switch position to be 750W.

For the direct cooled version of the power module disclosed herein with reference to fig. 43-58 and the associated description, testing was performed using a cold plate 902 with internal coolant channels and machined cavities, where the base plate 602 was located inside and allowed the coolant to be sealed against leakage by the pin fins 642 and gasket. The maximum power consumption was measured at each switch position to be 1000W. For both tests, the junction temperature was monitored using thermal imager and virtual junction techniques.

To demonstrate the performance advantages of the direct cooling power module 100 at the system level, the power module was installed in a three-phase inverter and tested under application conditions as disclosed herein with reference to fig. 43-58 and the associated description. An 800V DC bus, a switching frequency of 20kHz, a three-phase load and a constant coolant temperature of 25 ℃ were used.

After applying the DC bus voltage to the inverter, the output current of the inverter is slowly increased while monitoring a temperature sensor built into the power module. The temperature sensor measurements are correlated to the junction temperature by testing specially configured coverless power modules to allow thermal imaging of the power device.

As shown in FIG. 61, finding a flat backplane version of a power module implemented in an inverter deals with maximum 410A_RMS(amp-rms), whereas the direct cooling version of the power module 100 of the present disclosure was found to be processed 490A_RMS. Thus, a power module 100 implementing pin fins 642 according to fig. 43-58 and the associated description corresponds to a 20% increase in output current capability.

It should be noted that the power modules 100 associated with fig. 43-58 may be implemented with different voltages, nominal temperatures, on-resistances, different maximum junction temperatures, different coolant temperatures, different switching frequencies, etc., and will also increase the output current capability compared to a non-directly cooled power module. In this regard, the output current capability may be increased by 5% -40%, 5% -10%, 10% -15%, 15% -20%, 20% -25%, 25% -30%, 30% -35%, 35% -40%, 10% -30%, 20% -40%, 15% -35% or 15% -40% as compared to a non-direct cooling power module. In this regard, the output current capability may be increased by at least 5%, 10%, 15%, 20%, 25%, 30%, 35%, or 40% as compared to a non-directly cooled power module. Moreover, many other improvements in performance are contemplated by the power module 100 associated with fig. 43-58 implemented as described herein.

In one or more aspects of the present disclosure, the power module 100 may be implemented as a high performance, compact, modular three-phase inverter based on the disclosed power module 100, which power module 100 is specifically optimized to fully utilize silicon carbide (SiC) MOSFETs. In some aspects, the modular AC output may allow the inverter to be configured as a dual inverter or a single inverter. In some aspects, the dual sided cold plate, custom capacitor, and directly cooled SiC module may enable ultra high power density of the inverter. Parasitic elements of all critical components including the power module 100 and the capacitor have been verified to ensure a minimum total stray inductance. In some aspects, the unit may operate under applied conditions of an 800V DC bus and 480V/830A phase currents.

In this regard, conventional power packages are an effective and well-recognized industrial solution for prior art silicon (Si) IGBTs. However, conventional power packages have difficulty fully exploiting the advantages provided by SiC-based technologies. Conventional power supply package footprints and internal layouts were originally designed for silicon devices, which typically have a single or small number of large devices connected in parallel, with the signal network following a long path. The bipolar nature of IGBTs limits the switching speed so that the design trade-off mentioned is acceptable.

To take full advantage of the high performance properties of SiC devices, technology-centric designs have been applied in connection with the disclosed power module 100. The power module 100 of the present disclosure overcomes the disadvantages of existing module designs. In this regard, the SiC-centric design of the present disclosure enables multiple smaller dies to be arranged in parallel such that they share dynamic current uniformly, and optimizes the signal network with short paths parallel planes such that the SiC dies switch uniformly even at high speeds.

To meet these requirements, the disclosed power module 100 has been highly optimized to achieve maximum performance of commercially available 650V-1700V SiC MOSFETs of all sizes. Some aspects of the disclosed power module 100 provide the ability to carry high currents (300A to > 600A) in a small footprint (53mm x 80mm), with the terminal arrangement allowing through bus bars and interconnections. The low inductance, uniformly matched layout of the disclosed power module 100 results in high quality switching events, thereby minimizing oscillations inside and outside the power module 100. In some implementations, the disclosed power module 100 may have a stray inductance of about 6.7nH and only about 60% of the area of a 62mm module. The disclosed current loops of the power module 100 have been designed such that they are wide, low profile, and evenly distributed between the devices such that they each have an equivalent impedance across the switch position. The power terminals may be vertically offset so that the bus bars between the DC link capacitors and the power module 100 may be laminated all the way to the power module 100 without the need for bends, coining, standoffs, or complex isolation. Ultimately, this achieves low inductance throughout the power loop through the DC link capacitance and SiC devices.

The thermal performance of the power module 100 and the cold plate may allow for maximizing heat flux and reducing system size and cost due to the high current density of SiC power devices. The disclosed direct cooling power module may implement a copper pin fin base plate that improves the thermal performance of existing flat base plate power modules. Flat backplane power modules require the application of a Thermal Interface Material (TIM) between the module and a heat sink or cold plate to fill any voids in the thermal path. The effect of this TIM is an additional thermal impedance between the module housing and the cold plate. The directly cooled power module 100 has pins designed to be in direct contact with the coolant without the need for a TIM. As shown in FIG. 61, a flat backplane version of the power module can handle 410A at most_RMSWhile the directly cooled version of the power module 100 can handle 490A at most_RMS. This corresponds to a 20% increase in output current capability.

In some aspects, the disclosed power module 100 may be implemented in an inverter design that adds multiple power modules 100 with unique double-sided cooling and the same low parasitic, high performance design. In one aspect, a dual-sided cold plate may be used, which features cooling surfaces on the top and bottom surfaces, allowing twice as many power modules 100 in the same footprint, resulting in more than twice the power density when used in conjunction with the directly cooled power modules 100 of the present disclosure, as compared to prior art implementations. In some aspects, the customized DC link capacitors may be implemented with the integrated laminate terminals disclosed herein that are mounted directly to both the top and bottom sets of power modules. This design has low stray inductance between the power module 100 and the capacitor and eliminates the need for a separate bus bar. The non-planar power module 100 of the present disclosure allows for no flexing of the capacitor terminal assemblies, which reduces cost and maximizes overlap. The DC input terminals may be built in capacitors, creating a tightly integrated solution to interconnect six half-bridge modules.

In some aspects, the disclosed power module 100 may be supported by a gate driver with high noise immunity and high speed protection to efficiently switch devices and provide maximum survivability under fault conditions.

In some aspects, the AC output terminals may be designed and implemented as modular subassemblies. This allows the inverter to be configured with 430A_RMSOr a dual three-phase inverter with six or more current sensors and more outputs, or configured to have 860A_RMSOr a single three-phase inverter with more output currents and three or more current sensors.

The disclosed double-sided cold plate assembly may be implemented with the direct-cooled power module 100 described herein, the power module 100 being hermetically mounted to the top and bottom sides with gaskets, and implemented with an inverter having sensors, modules, cold plates, and capacitors.

To verify the high performance nature of the system, components have been evaluated in both the frequency and time domains. In some aspects, small-signal parasitic extraction enables accurate measurement of parasitic elements that can be used in an iterative design process to minimize stray inductance. The quality of the switching waveforms for both overshoot voltage and ringing was verified at 800V and 600A per power module via a double pulse test via the module and DC link capacitors. In some aspects, DC link capacitor designs may be implemented with optimal terminal spacing and placement to balance current density and minimize stray inductance.

Accordingly, the present disclosure presents an improved power module 100 and associated system configured to account for heat and increase output current capability as compared to a non-directly cooled power module. Further, the disclosed power module 100 may be implemented in a variety of topologies (including a half-bridge configuration, a full-bridge configuration, a common source configuration, a common drain configuration, a neutral point clamped configuration, a three-phase configuration, etc.). Applications for the power module 100 may include power systems, motor systems, automotive motor systems, charging systems, automotive charging systems, vehicle systems, industrial motor drives, embedded motor drives, uninterruptible power supplies, AC-DC power supplies, welder power supplies, military systems, inverters for wind turbines, solar panels, tidal power plants, and Electric Vehicles (EVs), converters, and the like.

Accordingly, the present disclosure also sets forth an improved power module 100 and associated system configured to account for parasitic impedances (such as loop inductance) to improve stability, reduce switching losses, reduce EMI, and limit stress on system components. In particular, the disclosed power module has the ability to reduce inductance by as much as 10% in some aspects with the disclosed arrangement. Further, the disclosed power module 100 may be implemented in a variety of topologies, including a half-bridge configuration, a full-bridge configuration, a common source configuration, a common drain configuration, a neutral point clamped configuration, and a three-phase configuration. Applications of the power module 100 include motor drives, solar inverters, circuit breakers, protection circuits, DC-DC converters, and the like.

The power module 100 of the present disclosure is suitable for most systems within size and weight constraints and power handling requirements specific to a given application. The power module designs and system-level architectures described in this disclosure allow for high levels of power density and volume utilization.

Aspects of the present disclosure have been described above with reference to the accompanying drawings, in which aspects of the disclosure are shown. It should be understood, however, that the present disclosure may be embodied in many different forms and should not be construed as limited to the aspects set forth above. Rather, these aspects are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. In addition, the various described aspects may be implemented separately. Furthermore, one or more of the various aspects described may be combined. Like numbers refer to like elements throughout.

It will be understood that, although the terms first, second, etc. may be used throughout the description to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. The term "and/or" includes any and all combinations of one or more of the associated listed items.

The terminology used herein is for the purpose of describing particular aspects only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises," "comprising," "includes," "including" and/or "including," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

It will be understood that when an element such as a layer, region or substrate is referred to as being "on" or extending onto "another element, it can be" directly on "or" directly on "the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly onto" another element, there are no intervening elements present. It will also be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present.

Relative terms such as "under …" or "above …" or "above …" or "below …", or "on top of …" or "on the bottom of …" may be used herein to describe the relationship of one element, layer or region to another element, layer or region, as illustrated. It will be understood that these terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures.

Aspects of the present disclosure are described herein with reference to cross-sectional views that are schematic illustrations of idealized embodiments (and intermediate structures) of the present disclosure. The thickness of layers and regions in the figures may be exaggerated for clarity. Further, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected.

In the drawings and specification, there have been disclosed typical aspects of the disclosure and, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation, the scope of the disclosure being set forth in the following claims.

For example, aspects of the present disclosure may be implemented in any type of computing device having wired/wireless communication capabilities via a communication channel, such as a desktop computer, a personal computer, a laptop/mobile computer, a Personal Data Assistant (PDA), a mobile phone, a tablet computer, a cloud computing device, and so forth.

Further, in accordance with various aspects of the present disclosure, the methods described herein are intended to operate with dedicated hardware implementations, including but not limited to PC, PDA, semiconductor, Application Specific Integrated Circuit (ASIC), programmable logic arrays, cloud computing devices, and other hardware devices configured to implement the methods described herein.

It should also be noted that the software implementations of the present disclosure described herein may alternatively be stored on a tangible storage medium, such as: magnetic media such as a magnetic disk or tape; magneto-optical or optical media such as magnetic disks; or a solid-state medium such as a memory card or other package that houses one or more read-only (non-volatile) memories, random access memories, or other re-writable (volatile) memories. An email or other digital file attachment that self-contains an information archive or set of archives is considered a distribution medium equivalent to a tangible storage medium. Accordingly, the present disclosure is considered to include a tangible storage medium or distribution medium as set forth herein and includes art-recognized equivalents and successor media, in which the software implementations herein are stored.

Additionally, aspects of the present disclosure may be implemented in non-general-purpose computer implementations. Furthermore, aspects of the disclosure set forth herein improve the functionality of the system as is apparent from the disclosure herein. Furthermore, aspects of the present disclosure relate to computer hardware that is specifically programmed to solve the complex problems addressed by the present disclosure. Accordingly, aspects of the present disclosure improve the functionality of the system as a whole in its specific implementations to perform the processes set forth by the present disclosure and defined by the claims.

While the disclosure has been described in terms of exemplary aspects, those skilled in the art will recognize that the disclosure can be practiced with modification within the spirit and scope of the appended claims. These examples given above are merely illustrative and are not meant to be an exhaustive list of all possible designs, aspects, applications or modifications of the disclosure. In this regard, it is contemplated that the various aspects, features, components, elements, modules, arrangements, circuits, etc. may be interchanged, mixed, matched, combined, etc. In this regard, the different features of the present disclosure are modular and may be mixed and matched with each other.

Claims

1. A power module, comprising:

at least one power substrate;

a housing disposed on the at least one power substrate;

a first terminal electrically connected to the at least one power substrate;

a second terminal;

a third terminal electrically connected to the at least one power substrate;

a plurality of power devices electrically connected to the at least one power substrate;

a gate-source plate electrically connected to the plurality of power devices; and

a temperature sensor disposed within the housing and electrically connected to the gate-source plate,

wherein the temperature sensor is on a portion of the at least one power substrate.

2. The power module of claim 1, wherein:

the at least one power substrate comprises a metallic surface and/or an electrically conductive surface supporting the plurality of power devices;

a portion of the at least one power substrate does not include the metallic surface and/or the conductive surface; and is

The temperature sensor is on a portion of the at least one power substrate that does not include the metallic surface and/or the electrically conductive surface.

3. The power module of claim 1, wherein the gate-source plate further comprises a plurality of resistors, each of the plurality of resistors electrically connected to one of the plurality of power devices; and wherein the gate-source plate is configured to receive at least one electrical signal.

4. The power module of claim 2 wherein each of a plurality of resistors is electrically connected to a gate of one of the plurality of power devices.

5. The power module of claim 2, wherein each of a plurality of resistors is electrically connected to a source of one of the plurality of power devices.

6. The power module of claim 2, wherein at least one electrical signal comprises one of: a gate drive signal and a source kelvin signal.

7. The power module as set forth in claim 1,

wherein the first terminal includes a contact surface located at a first elevation above the housing; and is

Wherein the second terminal includes a contact surface located at a second elevation above the housing different from the first elevation.

8. An arrangement comprising the power module of claim 1, the arrangement further comprising:

at least one component comprising at least one of: at least one bus bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor; and

a configuration housing configured to house and encapsulate the power module and the at least one component.

9. The arrangement of claim 8, further comprising: an electrical interface configured to connect to and exchange data with at least one of: the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor.

10. The configuration of claim 8, wherein the configuration is configured to test the implementation of the power module for a particular application.

11. The arrangement of claim 8, further comprising: a cooling fan configured to move air through the configuration housing.

12. The power module of claim 1, wherein a total stray inductance value of a critical power switching loop of the power module comprises a range of 12(nH) to 2 (nH).

13. A system comprising the power module of claim 1, and further comprising at least one of: an inverter, a power system, a motor system, a converter and an AC-DC power supply.

14. A power module, comprising:

at least one power substrate;

a housing disposed on the at least one power substrate;

a first terminal electrically connected to the at least one power substrate;

a second terminal;

a third terminal electrically connected to the at least one power substrate;

a gate-source plate configured to receive at least one electrical signal; and is

The gate-source plate further comprising a plurality of resistors, each of the plurality of resistors electrically connected to one of the plurality of power devices,

wherein each of the plurality of resistors is electrically connected to one of: a gate of one of the plurality of power devices and a source of one of the plurality of power devices.

15. The power module of claim 14 wherein each of the plurality of resistors is electrically connected to the gate of one of the plurality of power devices.

16. The power module of claim 14, wherein each of the plurality of resistors is electrically connected to the source of one of the plurality of power devices.

17. The power module of claim 14 wherein the at least one electrical signal comprises a gate drive signal.

18. The power module of claim 14, wherein the at least one electrical signal comprises a source kelvin signal.

19. The power module of claim 14, further comprising: a temperature sensor disposed within the housing and electrically connected to the gate-source plate.

20. The power module as set forth in claim 19,

wherein the at least one power substrate comprises a metallic surface and/or an electrically conductive surface supporting the plurality of power devices;

wherein the at least one power substrate includes a portion that does not include the metallic surface and/or the conductive surface; and is

Wherein the temperature sensor is on the portion of the at least one power substrate that does not include the metallic surface and/or the electrically conductive surface.

21. The power module as set forth in claim 14,

22. A system comprising the power module of claim 14 and further comprising at least one of: an inverter, a power system, a motor system, a converter and an AC-DC power supply.

23. An arrangement comprising the power module of claim 14, the arrangement further comprising:

24. The arrangement of claim 23, further comprising: an electrical interface configured to connect to and exchange data with at least one of: the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor.

25. The configuration of claim 23, wherein the configuration is configured to test the implementation of the power module for a particular application.

26. The arrangement of claim 23, further comprising: a cooling fan configured to move air through the configuration housing.

27. The power module of claim 14, wherein a total stray inductance value of a critical power switching loop of the power module comprises a range of 12(nH) to 2 (nH).

28. A process of configuring a power module, comprising:

arranging at least one power substrate;

disposing a housing on the at least one power substrate;

electrically connecting a first terminal to the at least one power substrate;

providing a second terminal;

electrically connecting a third terminal to the at least one power substrate;

electrically connecting a plurality of power devices to the at least one power substrate;

mounting a gate-source plate electrically connected to the plurality of power devices; and is

A temperature sensor is disposed within the housing and electrically connected to the gate-source plate,

29. The process of claim 28, wherein:

The temperature sensor is on the portion of the at least one power substrate that does not include the metallic surface and/or the electrically conductive surface.

30. The process of claim 28, further comprising:

mounting the gate-source plate to receive at least one electrical signal; and is

Arranging a plurality of resistors with the gate-source plate, each of the plurality of resistors electrically connected to one of the plurality of power devices.

31. The process of claim 29, wherein at least one electrical signal comprises one of: a gate drive signal and a source kelvin signal.

32. The process of claim 29, further comprising: electrically connecting each of a plurality of resistors to a gate of one of the plurality of power devices.

33. The process of claim 29, further comprising: electrically connecting each of a plurality of resistors to a source of one of the plurality of power devices.

34. The process of claim 28, further comprising:

positioning a contact surface of the first terminal at a first elevation above the housing; and is

Positioning a contact surface of the second terminal at a second elevation above the housing different from the first elevation.

35. The process of claim 28, further comprising:

implementing a configuration that includes the power module;

providing at least one component, the at least one component comprising at least one of: at least one bus bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor; and is

A configuration housing is arranged to house and enclose the power module and the at least one component.

36. The process of claim 35, further comprising: connecting and exchanging data with at least one of: the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor.

37. The process of claim 35, further comprising: testing an implementation of the power module for a particular application with the configuration.

38. The process of claim 35, further comprising: air is moved through the configuration housing with a cooling fan.

39. A process of configuring and testing a power module, comprising:

setting the power module;

implementing a configuration including the power module, including:

40. The process of claim 39, further comprising: connecting and exchanging data with at least one of: the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor.

41. The process of claim 39, further comprising: testing an implementation of the power module for a particular application with the configuration.

42. The process of claim 39, further comprising:

connecting with at least one of the following through an electrical interface: the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor; and is

Testing an implementation of the power module for a particular application with the configuration.

43. The process of claim 39, further comprising: air is moved through the configuration housing with a cooling fan.

44. A process of configuring a power module, comprising:

arranging at least one power substrate;

disposing a housing on the at least one power substrate;

electrically connecting a first terminal to the at least one power substrate;

providing a second terminal;

electrically connecting a third terminal to the at least one power substrate;

mounting a gate-source plate electrically connected to the plurality of power devices, the gate-source plate configured to receive at least one electrical signal; and is

Arranging a plurality of resistors with the gate-source plate, each of the plurality of resistors electrically connected to one of the plurality of power devices; and is

Electrically connecting each of the plurality of resistors to one of: a gate of one of the plurality of power devices and a source of one of the plurality of power devices.

45. The process of claim 44, wherein the at least one electrical signal comprises a gate drive signal.

46. The process of claim 44, wherein said at least one electrical signal comprises a source Kelvin signal.

47. The process of claim 44, further comprising: electrically connecting each of the plurality of resistors to the gate of one of the plurality of power devices.

48. The process of claim 44, further comprising: electrically connecting each of the plurality of resistors to the source of one of the plurality of power devices.

49. The process of claim 44, further comprising: a temperature sensor is disposed within the housing and electrically connected to the gate-source plate.

50. In accordance with the process of claim 49,

51. The process of claim 44, further comprising:

implementing a configuration that includes the power module;

52. The process of claim 51, further comprising: connecting and exchanging data with at least one of: the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor.

53. The process of claim 51, further comprising: testing an implementation of the power module for a particular application with the configuration.

54. The process of claim 51, further comprising: air is moved through the configuration housing with a cooling fan.

55. A power module, comprising:

at least one power substrate;

a housing disposed on the at least one power substrate;

a first terminal electrically connected to the at least one power substrate;

a second terminal;

a third terminal electrically connected to the at least one power substrate; and

a plurality of power devices electrically connected to the at least one power substrate,

wherein the power module is constructed, arranged and configured to reduce inductance, and

wherein the inductance comprises a total stray inductance value of a critical power switching loop of the power module, the total stray inductance value comprising a range of 12(nH) to 2 (nH).

56. The power module of claim 55 wherein the inductance comprises a total stray inductance value of critical power switching loops of the power module, the total stray inductance value comprising a range of 10(nH) to 2 (nH).

57. The power module of claim 55 wherein the inductance comprises a total stray inductance value of a critical power switching loop of the power module, the total stray inductance value comprising a range of 4(nH) to 2 (nH).

58. The power module of claim 55 wherein the plurality of power devices each have 4 to 10 bonds.

59. The power module as in claim 55, wherein,

60. A system comprising the power module of claim 55, and further comprising at least one of: an inverter, a power system, a motor system, a converter and an AC-DC power supply.

61. A power module, comprising:

at least one power substrate;

a housing disposed on the at least one power substrate;

a first terminal electrically connected to the at least one power substrate;

a second terminal;

wherein the power module is constructed, arranged and configured to increase the switching speed of the power module, and

wherein a switching speed of the power module has a range of 30(A/ns) to 100 (A/ns).

62. The power module of claim 61 wherein the switching speed of the power module has a range of 30(A/ns) to 70 (A/ns).

63. The power module of claim 61 wherein the switching speed of the power module has a range of 30(A/ns) to 40 (A/ns).

64. The power module of claim 61 wherein the switching speed of the power module has a range of 60(V/ns) to 80 (V/ns).

65. The power module of claim 61 wherein the switching speed of the power module has a range of 40(V/ns) to 60 (V/ns).

66. The power module of claim 61 wherein the switching speed of the power module has a range of 20(V/ns) to 40 (V/ns).

67. The power module of claim 61, wherein a total stray inductance value of a critical power switching loop of the power module comprises a range of 12(nH) to 2 (nH).

68. The power module as in claim 61,

69. A system comprising the power module of claim 61, and further comprising at least one of: an inverter, a power system, a motor system, a converter and an AC-DC power supply.

70. A power module, comprising:

at least one power substrate;

a housing disposed on the at least one power substrate;

a first terminal electrically connected to the at least one power substrate;

a second terminal;

wherein the power module is constructed, arranged and configured to reduce switching losses of the power module,

wherein a switching loss of the power module has a range of 0.5(mJ/A) to 0.25 (mJ/A).

71. The power module of claim 70 wherein the switching loss of the power module has a range of 0.4(mJ/A) to 0.25 (mJ/A).

72. The power module of claim 70 wherein said power module,

73. A system comprising the power module of claim 70, and further comprising at least one of: an inverter, a power system, a motor system, a converter and an AC-DC power supply.

74. A power module, comprising:

at least one power substrate;

a housing disposed on the at least one power substrate;

a first terminal electrically connected to the at least one power substrate;

a second terminal;

wherein the power module is constructed, arranged and configured to increase power device utilization of the power module; and is

Wherein the power device utilization is defined as a percentage calculated by a ratio of power device area to total power module area, the percentage comprising a range of 5% to 10%.

75. The power module of claim 74 wherein the power device utilization is defined as a percentage calculated by a ratio of power device area to total power module area, the percentage comprising a range of 5% to 7%.

76. The power module of claim 74 wherein the power device utilization is defined as a percentage calculated by a ratio of power device area to total power module area, the percentage comprising a range of 6% to 8%.

77. The power module of claim 74 wherein the power device utilization is defined as a percentage calculated by a ratio of power device area to total power module area, the percentage comprising a range of 7% to 10%.

78. The power module as in claim 74, wherein,

79. A system comprising the power module of claim 74, and further comprising at least one of: an inverter, a power system, a motor system, a converter and an AC-DC power supply.

80. A power module, comprising:

at least one power substrate;

a housing disposed on the at least one power substrate;

a first terminal electrically connected to the at least one power substrate;

a second terminal;

wherein the power module is constructed, arranged and configured to reduce a height of the power module,

wherein the height of the power module comprises a range of 7mm to 30 mm.

81. The power module of claim 80 wherein the height of the power module comprises a range of 9mm to 11 mm.

82. The power module of claim 80 wherein the height of the power module comprises a range of 15mm to 17 mm.

83. The power module of claim 80 wherein the height of the power module comprises a range of 23mm to 27 mm.

84. The power module as in claim 80, wherein,

85. The power module of claim 80 wherein a total stray inductance value of a critical power switching loop of the power module comprises a range of 12(nH) to 2 (nH).

86. A system comprising the power module of claim 80, and further comprising at least one of: an inverter, a power system, a motor system, a converter and an AC-DC power supply.

87. A power module, comprising:

at least one power substrate;

a housing disposed on the at least one power substrate;

a first terminal electrically connected to the at least one power substrate;

a second terminal;

wherein the power module is constructed, arranged and configured to increase a terminal utilization of the power module;

wherein the terminal utilization includes a substrate ratio including a total contact width of the terminals and a width of the power module substrate; and is

Wherein the base ratio is in the range of 70% to 95%.

88. The power module of claim 87 wherein the base ratio is in the range of 70-80%.

89. The power module of claim 87 wherein the base ratio is in the range of 80% to 90%.

90. The power module of claim 87 wherein the base ratio is in the range of 90% to 95%.

91. The power module of claim 87 wherein said power module,

wherein the width of the power module base includes the width of the at least one power substrate.

92. The power module of claim 87 wherein said power module,

93. The power module of claim 87, wherein a total stray inductance value of a critical power switching loop of the power module comprises a range of 12(nH) to 2 (nH).

94. A system comprising the power module of claim 87, and further comprising at least one of: an inverter, a power system, a motor system, a converter and an AC-DC power supply.

95. A power module, comprising:

at least one power substrate;

a housing disposed on the at least one power substrate;

a first terminal electrically connected to the at least one power substrate;

a second terminal;

wherein the power module is constructed, arranged and configured to increase a terminal area of the power module, and

wherein the terminal area comprises a terminal area ratio comprising a ratio of a total contact area to a total power module area, and the terminal area ratio has a range of 15% to 50%.

96. The power module of claim 95 wherein the terminal area ratio has a range of 20% to 40%.

97. The power module of claim 96 wherein the terminal area ratio has a range of 20% to 25%.

98. The power module of claim 96 wherein the terminal area ratio has a range of 25% to 30%.

99. The power module of claim 96 wherein the terminal area ratio has a range of 30% to 35%.

100. The power module of claim 95 wherein said power module,

wherein the first terminal includes a contact surface located at a first elevation above the housing; and

101. The power module of claim 95 wherein a total stray inductance value of a critical power switching loop of the power module comprises a range of 12(nH) to 2 (nH).

102. A system comprising the power module of claim 95, and further comprising at least one of: an inverter, a power system, a motor system, a converter and an AC-DC power supply.

103. A power module, comprising:

at least one conductive power substrate;

a housing disposed on the at least one electrically conductive power substrate;

a first terminal electrically connected to the at least one conductive power substrate;

a first terminal;

a second terminal;

a third terminal electrically connected to the at least one conductive power substrate;

a plurality of power devices disposed on and connected to the at least one conductive power substrate;

a base plate; and

a plurality of pin fins disposed on the base plate and configured to provide direct cooling for the power module,

wherein the plurality of pin fins are arranged at the bottom of the base plate; and is

Wherein the plurality of pin fins are constructed and arranged to form channels between the plurality of pin fins.

104. The power module of claim 103 wherein:

the first terminal includes a contact surface on the housing;

the second terminal includes a contact surface on the housing; and is

The third terminal is electrically connected to at least one of the plurality of power devices.

105. The power module of claim 103, wherein each of the plurality of pin fins is integrally formed with the base plate and comprises the same material as the base plate.

106. The power module of claim 103 wherein the plurality of pin fins comprise a base, a terminal surface, and one or more surfaces extending from the base to the terminal surface.

107. The power module of claim 106 wherein:

the termination surface comprises a cross-sectional shape with respect to a plane parallel to the surface of the base plate; and is

The cross-sectional shape includes at least one of: asymmetric cross-sectional shape, airfoil cross-sectional shape, and airfoil cross-sectional shape.

108. The power module of claim 106 wherein:

the base comprises a cross-sectional shape with respect to a plane parallel to a surface of the bottom plate; and is

The cross-sectional shape includes at least one of: square cross-sectional shapes, rectangular cross-sectional shapes, circular cross-sectional shapes, elliptical cross-sectional shapes, and symmetrical cross-sectional shapes.

109. The power module of claim 106 wherein:

the plurality of pin fins comprises a base attached to the bottom plate, at least one surface extending away from the bottom plate and the base, and a termination surface connected to the at least one surface; and is

The at least one surface extends away from the floor and the at least one surface tapers as the at least one surface extends to the termination surface.

110. The power module of claim 103 wherein the output current capability is 5% to 40% greater than a power module that is not directly cooled.

111. The power module of claim 103 wherein the output current capability is 15% greater than a power module that is not directly cooled.

112. A system comprising the power module of claim 103 and further comprising a cold plate.

113. A system comprising the power module of claim 103 and further comprising a cold plate and at least one of: an inverter, a power system, a motor system, a converter and an AC-DC power supply.

114. A system comprising the power module of claim 103, and further comprising at least one of: the system comprises an inverter, a power supply system, a motor system, a converter and an AC-DC power supply.

115. A power module, comprising:

a base plate;

at least one power substrate;

a housing disposed on the at least one power substrate;

a first terminal electrically connected to the at least one power substrate;

a second terminal;

a third terminal electrically connected to the at least one power substrate;

a plurality of pin fins disposed on the base plate and configured to provide direct cooling for the power module, wherein:

the plurality of pin fins are arranged at the bottom of the bottom plate; and is

The plurality of pin fins are constructed and arranged to form channels between the plurality of pin fins.

116. The power module of claim 115 wherein each of the plurality of pin fins is integrally formed with and comprises the same material as the base plate.

117. The power module of claim 115 wherein the plurality of pin fins comprise a base, a terminal surface, and one or more surfaces extending from the base to the terminal surface.

118. The power module of claim 117 wherein:

119. The power module of claim 117 wherein:

120. The power module of claim 115 wherein:

the plurality of pin fins comprise a cross-sectional shape with respect to a plane parallel to a surface of the base plate; and is

The cross-sectional shape includes at least one of: profile cross-sectional shapes, circular cross-sectional shapes, square cross-sectional shapes, and rectangular cross-sectional shapes.

121. The power module of claim 115 wherein:

122. The power module of claim 115 wherein the output current capability is 5% to 40% greater than that of the power module with no direct cooling.

123. The power module of claim 115 wherein the output current capability is 15% greater than a power module that is not directly cooled.

124. A system comprising the power module of claim 115, and further comprising a cold plate.

125. A system comprising the power module of claim 115, and further comprising a cold plate and at least one of: an inverter, a power system, a motor system, a converter and an AC-DC power supply.

126. A system comprising the power module of claim 115, and further comprising at least one of: an inverter, a power system, a motor system, a converter and an AC-DC power supply.

127. A process of configuring a power module, comprising:

arranging at least one power substrate;

disposing a housing on the at least one power substrate;

electrically connecting a first terminal to the at least one power substrate;

providing a second terminal;

electrically connecting a third terminal to the at least one power substrate;

mounting a gate-source plate electrically connected to the plurality of power devices, the gate-source plate configured to receive at least one electrical signal;

arranging a bottom plate;

providing a plurality of pin fins disposed on the base plate;

arranging the plurality of pin fins to form channels between the plurality of pin fins; and is

Configuring the plurality of pin fins to cool at least one component of the power module.

128. The process of configuring a power module of claim 127, further comprising:

configuring the plurality of pin fins to provide direct cooling for the power module; and is

Disposing the plurality of pin fins at a bottom of the base plate.

129. The process of configuring a power module of claim 127, further comprising: configuring the plurality of pin fins to include a base, a termination surface, and one or more surfaces extending from the base to the termination surface.

130. The process of configuring a power module of claim 129, wherein:

131. The process of configuring a power module of claim 129, wherein:

132. The process of configuring a power module of claim 129, wherein the output current capability is 5% to 40% greater than the power module with no direct cooling.

133. The process of configuring a power module of claim 129, wherein the output current capability is 15% greater than a power module that is not directly cooled.