KR102578958B1 - 칩의 제조 방법 - Google Patents

칩의 제조 방법 Download PDF

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Publication number
KR102578958B1
KR102578958B1 KR1020180106688A KR20180106688A KR102578958B1 KR 102578958 B1 KR102578958 B1 KR 102578958B1 KR 1020180106688 A KR1020180106688 A KR 1020180106688A KR 20180106688 A KR20180106688 A KR 20180106688A KR 102578958 B1 KR102578958 B1 KR 102578958B1
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KR
South Korea
Prior art keywords
workpiece
modified layer
laser processing
laser beam
chip
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KR1020180106688A
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English (en)
Korean (ko)
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KR20190034085A (ko
Inventor
요시아키 요도
진얀 자오
Original Assignee
가부시기가이샤 디스코
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Publication of KR20190034085A publication Critical patent/KR20190034085A/ko
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Publication of KR102578958B1 publication Critical patent/KR102578958B1/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H01L21/78—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B24B27/0675—Grinders for cutting-off methods therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • H01L21/56—
    • H01L21/76—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020180106688A 2017-09-22 2018-09-06 칩의 제조 방법 Active KR102578958B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017182986A JP6896344B2 (ja) 2017-09-22 2017-09-22 チップの製造方法
JPJP-P-2017-182986 2017-09-22

Publications (2)

Publication Number Publication Date
KR20190034085A KR20190034085A (ko) 2019-04-01
KR102578958B1 true KR102578958B1 (ko) 2023-09-14

Family

ID=65838977

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180106688A Active KR102578958B1 (ko) 2017-09-22 2018-09-06 칩의 제조 방법

Country Status (4)

Country Link
JP (1) JP6896344B2 (https=)
KR (1) KR102578958B1 (https=)
CN (1) CN109531838B (https=)
TW (1) TWI770280B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI733604B (zh) 2020-06-10 2021-07-11 財團法人工業技術研究院 玻璃工件雷射處理系統及方法
CN118002911A (zh) * 2024-03-12 2024-05-10 海目星激光科技集团股份有限公司 硅片激光加工设备和方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013236001A (ja) 2012-05-10 2013-11-21 Disco Abrasive Syst Ltd 板状物の分割方法
JP2014199834A (ja) 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
JP5939769B2 (ja) 2011-11-11 2016-06-22 株式会社ディスコ 板状物の加工方法
JP2017059684A (ja) 2015-09-16 2017-03-23 株式会社ディスコ ウエーハの加工方法
JP2017069308A (ja) 2015-09-29 2017-04-06 浜松ホトニクス株式会社 レーザ加工方法

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JPS5939769B2 (ja) * 1981-03-27 1984-09-26 昭和情報機器株式会社 入力装置
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP4659300B2 (ja) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
JP3842769B2 (ja) * 2003-09-01 2006-11-08 株式会社東芝 レーザ加工装置、レーザ加工方法、及び半導体装置の製造方法
US20060030156A1 (en) * 2004-08-05 2006-02-09 Applied Materials, Inc. Abrasive conductive polishing article for electrochemical mechanical polishing
CN100481337C (zh) * 2004-12-08 2009-04-22 雷射先进科技株式会社 被分割体的分割起点形成方法、被分割体的分割方法
JP4198123B2 (ja) * 2005-03-22 2008-12-17 浜松ホトニクス株式会社 レーザ加工方法
JP2007019379A (ja) * 2005-07-11 2007-01-25 Disco Abrasive Syst Ltd ウェーハの加工方法
CN100536108C (zh) * 2005-11-16 2009-09-02 株式会社电装 半导体器件和半导体基板切分方法
CN102326232B (zh) * 2009-02-25 2016-01-20 日亚化学工业株式会社 半导体元件的制造方法
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP2011061043A (ja) * 2009-09-10 2011-03-24 Disco Abrasive Syst Ltd 加工方法および半導体デバイスの製造方法
JP5686551B2 (ja) * 2010-08-31 2015-03-18 株式会社ディスコ ウエーハの加工方法
JP5480169B2 (ja) * 2011-01-13 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法
TWI457191B (zh) * 2011-02-04 2014-10-21 Mitsuboshi Diamond Ind Co Ltd 雷射切割方法及雷射加工裝置
KR20130033114A (ko) * 2011-09-26 2013-04-03 주식회사 이오테크닉스 레이저 가공방법
JP5964580B2 (ja) * 2011-12-26 2016-08-03 株式会社ディスコ ウェーハの加工方法
JP2013152987A (ja) * 2012-01-24 2013-08-08 Disco Abrasive Syst Ltd ウエーハの加工方法
US9236284B2 (en) * 2014-01-31 2016-01-12 Applied Materials, Inc. Cooled tape frame lift and low contact shadow ring for plasma heat isolation
CN105171235B (zh) * 2014-06-23 2018-06-01 大族激光科技产业集团股份有限公司 一种双焦点激光微加工装置及其加工方法
JP6399914B2 (ja) * 2014-12-04 2018-10-03 株式会社ディスコ ウエーハの生成方法
JP6395613B2 (ja) * 2015-01-06 2018-09-26 株式会社ディスコ ウエーハの生成方法
JP6456228B2 (ja) * 2015-04-15 2019-01-23 株式会社ディスコ 薄板の分離方法
JP6482389B2 (ja) * 2015-06-02 2019-03-13 株式会社ディスコ ウエーハの生成方法
JP6472347B2 (ja) * 2015-07-21 2019-02-20 株式会社ディスコ ウエーハの薄化方法
PL3334697T3 (pl) * 2015-08-10 2022-01-24 Saint-Gobain Glass France Sposób cięcia cienkiej warstwy szkła
JP6486239B2 (ja) * 2015-08-18 2019-03-20 株式会社ディスコ ウエーハの加工方法
JP2017107903A (ja) * 2015-12-07 2017-06-15 株式会社ディスコ ウェーハの加工方法
CN106328778B (zh) * 2016-09-14 2019-03-08 中国科学院半导体研究所 隐形切割制备正、倒和倒梯形台状衬底的led芯片的方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5939769B2 (ja) 2011-11-11 2016-06-22 株式会社ディスコ 板状物の加工方法
JP2013236001A (ja) 2012-05-10 2013-11-21 Disco Abrasive Syst Ltd 板状物の分割方法
JP2014199834A (ja) 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
JP2017059684A (ja) 2015-09-16 2017-03-23 株式会社ディスコ ウエーハの加工方法
JP2017069308A (ja) 2015-09-29 2017-04-06 浜松ホトニクス株式会社 レーザ加工方法

Also Published As

Publication number Publication date
CN109531838A (zh) 2019-03-29
CN109531838B (zh) 2021-12-21
KR20190034085A (ko) 2019-04-01
JP6896344B2 (ja) 2021-06-30
JP2019061980A (ja) 2019-04-18
TW201916138A (zh) 2019-04-16
TWI770280B (zh) 2022-07-11

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