KR102560889B1 - Light emitting device package and lighting apparatus - Google Patents

Abstract

The embodiment relates to a light emitting device package and a lighting device.
A light emitting device package according to an embodiment includes a package body 11; a light emitting element 25 disposed on the package body 11 including an active layer 92; a molding member 41 disposed on the light emitting element 25; A phosphor 30 disposed in the molding member 41 may be included.
In the light emitting device 25, an energy ratio of a second wavelength range of 465 nm to 495 nm may be greater than an energy ratio of a first wavelength range of 415 nm to 455 nm.
The active layer 92 of the light emitting device 25 may include an In _x Al _y Ga _{1 -x- y} N (0.15≤x≤0.20, 0<y<1) layer.
The phosphor 30 includes at least three types of at least one green phosphor, at least one cyan phosphor, and at least one red phosphor, and the light emitting element 25 has a light emitting wavelength A white light source can be implemented with the excitation wavelength.

Description

Light emitting device package and lighting device {LIGHT EMITTING DEVICE PACKAGE AND LIGHTING APPARATUS}

The embodiment relates to a light emitting device package and a lighting device.

A light emitting device (Light Emitting Device) can be created by combining a p-n junction diode, which has a characteristic of converting electrical energy into light energy, with elements of groups 3-5 or elements of groups 2-6 on the periodic table, and the composition ratio of compound semiconductors It is possible to implement various colors by adjusting .

For example, nitride semiconductors are of great interest in the field of developing optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, red light emitting devices, and the like using nitride semiconductors are commercialized and widely used.

These light emitting devices can implement various colors such as red, green, blue and ultraviolet rays, and can implement white light with good efficiency by using fluorescent materials or combining various emitted lights. It has the advantages of power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness.

On the other hand, as a method of implementing white light, there is a method of utilizing a single chip and a method of utilizing multi-chips. For example, in the case of implementing white light with a single chip, a method of obtaining white light by exciting at least one phosphor using light emitted from a blue LED or ultraviolet (UV) LED is used. Alternatively, in the case of a multi-chip type, there is a method of manufacturing by combining three types of RGB (Red, Green, Blue) chips.

There are B cone cells, G cone cells, and R cone cells in the retina of the human body. The magnitude of each electrical signal varies depending on how much these three cone cells are excited by external light, and their electrical signals in the brain. By combining them, the color is determined.

On the other hand, in the prior art, in order to increase the energy efficiency of the light source, a blue LED having a center wavelength of about 440 nm to 450 nm is mainly used.

For example, FIG. 1 is an exemplary diagram of a wavelength spectrum (C1) of a light emitting device package according to the prior art, compared to a light emitting wavelength (S) of sunlight. Referring to FIG. 1, the energy ratio (HC) of the first wavelength range (H) of about 415 nm to 455 nm occupies a larger area than the energy ratio (BC) of the second wavelength range (B) of about 465 nm to 495 nm. .

For example, in the prior art, compared to sunlight, the energy (HC) ratio of the first wavelength range (415 to 455 nm) reaches about 98%, and the energy (BC) ratio of the second wavelength range (465 to 495 nm) was only about 54%.

In addition, FIG. 2 shows a wavelength spectrum (C1) of a light emitting device package according to the prior art, a wavelength spectrum of a green phosphor (G1) employed therein, and a wavelength spectrum of a red phosphor (R1).

According to a recent study, when human visual cells are exposed to light in the first wavelength region (H) of about 415 nm to 455 nm, it shows negative effects (Eye-Hazardous) on the eyes, and the negative effects accumulate over a lifetime, As a result, it has been found to cause damage to human vision, such as causing age-related macular degeneration. Macular degeneration is the main cause of blindness in old age, but it also occurs in the younger age group recently. It is known that the former sight cannot be restored.

On the other hand, in order to reduce the hazard of the first wavelength region (H) of 415 nm to 455 nm, some studies have attempted to use a filter in front of the LED light source or wear glasses equipped with a filter, but in these attempts, 415 nm to 455 nm In addition to the 455nm first wavelength range (H), which is harmful to the eyes, the blue range necessary for making a white light source and the second wavelength range (B) of about 465nm to 495nm, which is beneficial for adjusting the circadian rhythm of the human body It is causing another problem that is even eliminated.

3 is Special CRI data of a light emitting device package according to the prior art. According to this, the value of R9 (pure red color), which is one of the indicators of the quality of the light source, is -11.9, so that reflected light similar to sunlight cannot be emitted. there is

Accordingly, according to the prior art, there is a technical problem of minimizing a wavelength range harmful to the human body and improving CRI characteristics.

On the other hand, in the prior art, there is an attempt to use a long-wavelength phosphor exhibiting low energy efficiency in order to improve CRI characteristics, but this has a technical contradiction problem in that luminous flux loss occurs, although the CRI characteristics are partially improved.

Accordingly, the prior art has a limit of technical contradiction that cannot simultaneously satisfy the technical characteristics of improving the luminous flux and the technical characteristics of improving the Special CRI index (eg R9>0).

One of the problems of the embodiment is to provide a light emitting device package and a lighting device capable of minimizing a wavelength range harmful to the human body, maximizing a wavelength range beneficial to the human body, and improving optical characteristics, for example, CRI index.

In addition, one of the problems of the embodiment is to provide a light emitting device package and a lighting device that can simultaneously satisfy the technical characteristics of luminous flux improvement and special CRI index improvement (for example, R9>0).

A light emitting device package according to an embodiment includes a package body 11; a light emitting element 25 disposed on the package body 11 including an active layer 92; a molding member 41 disposed on the light emitting element 25; A phosphor 30 disposed in the molding member 41 may be included.

In the light emitting device 25, an energy ratio of a second wavelength range of 465 nm to 495 nm may be greater than an energy ratio of a first wavelength range of 415 nm to 455 nm.

The active layer 92 of the light emitting device 25 may include an In _x Al _y Ga _{1 -x- y} N (0.15≤x≤0.20, 0<y<1) layer.

The phosphor 30 includes at least three types of at least one green phosphor, at least one cyan phosphor, and at least one red phosphor, and the light emitting element 25 has a light emitting wavelength A white light source can be implemented with the excitation wavelength.

A light emitting device package according to an embodiment includes a package body 11; A light emitting element 25 including an active layer 94 and disposed on the package body 11; a molding member 41 disposed on the light emitting element 25; It includes the phosphor 30 disposed in the molding member 41, and the light emitting element 25 has a higher energy ratio in a second wavelength range of 465 nm to 495 nm than an energy ratio in a first wavelength range of 415 nm to 455 nm. The active layer 92 of the light emitting device 25 may include an In _x Al _y Ga _1-xy N layer (0.06≤x≤0.20, 0<y<1).

The active layer 94 may include a first active layer 94a having a peak wavelength in the first wavelength range of 415 nm to 455 nm and a first active layer 94a having a peak wavelength in the second wavelength range of 465 nm to 495 nm. can

The phosphor 30 includes at least two types of at least one green phosphor, at least one cyan phosphor, and at least one red phosphor, and the light emitting element 25 has a light emission wavelength A white light source can be implemented with the excitation wavelength.

A lighting device according to an embodiment may include a light emitting unit having the light emitting device package.

According to the embodiment, it is possible to provide a light emitting device package and a lighting device having technical effects capable of minimizing a wavelength range harmful to the human body, maximizing a wavelength range beneficial to the human body, and improving optical characteristics (eg CRI index). can

In addition, according to the embodiment, it is possible to provide a light emitting device package and a lighting device having technical effects capable of simultaneously satisfying the technical characteristics of luminous flux improvement and special CRI index improvement (eg, R9>0).

1 is an exemplary view of a wavelength spectrum of a light emitting device package according to the prior art.
Figure 2 is an exemplary view of the wavelength spectrum of a light emitting device package and a phosphor according to the prior art.
3 is CRI data of a light emitting device package according to the prior art.
4A is a cross-sectional view of the light emitting device package according to the first embodiment.
4B is a cross-sectional view of the light emitting device in the light emitting device package according to the first embodiment.
5 is an exemplary view of a wavelength spectrum of the light emitting device package according to the first embodiment.
6A is an exemplary view of a wavelength spectrum of a light emitting device package and a phosphor according to a first experimental example;
6B is CRI data of the light emitting device package according to the first experimental example.
6c and 6d are wavelength spectrum data for explaining optical characteristics of the light emitting device package according to the embodiment.
7A is an exemplary view of a wavelength spectrum of a light emitting device package and a phosphor according to a second experimental example;
7B is CRI data of a light emitting device package according to a second experimental example.
8A is an exemplary view of a wavelength spectrum of a light emitting device package and a phosphor according to a third experimental example;
8B is CRI data of a light emitting device package according to a third experimental example.
9A is a cross-sectional view of a light emitting device package according to a second embodiment.
9B is a cross-sectional view of a light emitting device in a light emitting device package according to a second embodiment.
9C is a bandgap diagram of an active layer in a light emitting device in a light emitting device package according to a second embodiment.
10A is an exemplary view of a wavelength spectrum of a light emitting device package according to a second embodiment.
10B is an exemplary view of a wavelength spectrum of a light emitting device package and a phosphor according to a fourth experimental example;
10C is CRI data of a light emitting device package according to a fourth experimental example.
11A to 11C are wavelength spectrum comparison data of a light emitting device package according to a second embodiment and a first prior art.
12 is an exploded perspective view of a lighting device according to an embodiment;

In the description of the embodiment, each layer (film), region, pattern or structure is "on/over" or "under" the substrate, each layer (film), region, pad or pattern. In the case where it is described as being formed in, "on/over" and "under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criterion for the top/top or bottom of each layer is described based on the drawings, but the embodiment is not limited thereto.

(Example)

4 is a cross-sectional view of the package 101 of the light emitting device according to the first embodiment.

Referring to FIG. 4 , the light emitting device package 101 of the embodiment includes at least one of a body 11, a plurality of lead frames 21 and 23, a light emitting device 25, a phosphor 30, and a molding member 41. can include

For example, the light emitting device package 101 of the embodiment is electrically connected to the body 11, the plurality of lead frames 21 and 23 disposed on the body 11, and the plurality of lead frames 21 and 23. It may include a connected light emitting element 25 and a molding member 41 disposed on the light emitting element 25 and having a phosphor 30 .

The body 11 may be formed of a material having a reflectance higher than transmittance, for example, a material having a reflectance of 70% or more with respect to a wavelength emitted by the light emitting element 25 . When the reflectance of the body 11 is 70% or more, it may be defined as a non-transmissive material.

The body 11 may be formed of a resin material such as a resin-based insulating material, for example, polyphthalamide (PPA). Alternatively, the body 11 may include a metal oxide added to a resin material such as epoxy or silicon, and the metal oxide may include at least one of TiO ₂ , SiO ₂ , and Al ₂ O ₃ , but is not limited thereto. .

The body 11 may include a silicone-based, epoxy-based, or plastic material, and may be formed of a thermosetting resin or a material with high heat resistance and high light resistance.

In addition, an acid anhydride, an antioxidant, a release agent, a light reflector, an inorganic filler, a curing catalyst, a light stabilizer, a lubricant, and titanium dioxide may be selectively added to the body 11.

In addition, the body 11 may be molded by at least one selected from the group consisting of epoxy resin, modified epoxy resin, silicone resin, modified silicone resin, acrylic resin, and urethane resin. For example, the body 11 is made of an epoxy resin composed of triglycidyl isocyanurate, hydrogenated bisphenol A diglycidyl ether, and the like, hexahydrophthalic anhydride, 3-methylhexahydrophthalic anhydride and 4-methylhexahydrophthalic acid. An acid anhydride such as phthalic anhydride, DBU (1,8-Diazabicyclo (5,4,0) undecene-7) as a curing accelerator and ethylene glycol, titanium oxide pigment, and glass fibers as a cocatalyst are added to the epoxy resin, , It is possible to use a solid epoxy resin composition that has undergone a partial curing reaction by heating to be B-staged, but is not limited thereto.

In the embodiment, a light blocking material or a diffusion agent may be mixed in the body 11 to reduce transmitted light. In addition, in order for the body 11 to have a predetermined function, at least one selected from the group consisting of a diffusion agent, a pigment, a fluorescent material, a reflective material, a light blocking material, a light stabilizer, and a lubricant is properly mixed with a thermosetting resin. can do.

The body 11 may include a cavity 15 that is recessed to a predetermined depth from the top surface of the body 11 and has an open top. The cavity 15 may be formed in a shape such as a concave cup structure, an open structure, or a recess structure, but is not limited thereto.

The cavity 15 has a width that gradually widens as it goes up, so light extraction efficiency can be improved.

A plurality of lead frames, for example, first and second lead frames 21 and 23 may be disposed on the body 11 . The first and second lead frames 21 and 23 may be disposed at the bottom of the cavity 15, and outer portions of the first and second lead frames 21 and 23 pass through the body 11. It may be exposed on at least one side of the body 11. Lower portions of the first lead frame 21 and the second lead frame 23 may be exposed to the lower portion of the body 11, and may be mounted on a circuit board to receive power.

As another example of the first and second lead frames 21 and 23, at least one or both of the first and second lead frames 21 and 23 are formed in a concave cup-shaped structure or a bent structure. It may have, or may include a recessed groove or hole for coupling with the body 11, but is not limited thereto. The light emitting device 25 may be disposed in the concave cup shape, but is not limited thereto.

The first lead frame 21 and the second lead frame 23 are made of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum It may include at least one of nium (Ta), platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P), and may be formed as a single layer or multiple layers.

A light emitting device 25 may be disposed on the first lead frame 21, and the light emitting device 25 may be adhered to the first lead frame 21 with a bonding member (not shown), but is limited thereto. it is not going to be The light emitting element 25 may be connected to at least one of the first and second lead frames 21 and 23 by a connecting member 27, but is not limited thereto. The connection member 27 may include a wire made of a conductive material, for example, a metal material.

The light emitting device 25 may include at least one of a group II-VI compound and a group III-V compound. The light emitting device 25 may be formed of, for example, a compound selected from the group consisting of GaN, AlGaN, InGaN, AlInGaN, GaP, AlN, GaAs, AlGaAs, InP, and mixtures thereof.

4B is a cross-sectional view of the light emitting device 25 in the light emitting device package according to the first embodiment, and through this, the light emitting device 25 in the embodiment will be described in more detail.

In the embodiment, the light emitting device 25 may be a vertical light emitting device, but is not limited thereto, and may be a horizontal light emitting device or a flip chip type light emitting device.

The light emitting device 25 of the embodiment includes a first electrode pad 51 located on the light emitting structure 90, a second electrode pad 50 located under the light emitting structure 90, the light emitting structure 90 and the second electrode pad 50. It may include at least one of a current blocking layer 72 positioned between the electrode pads 50 and corresponding to the first electrode pad 51 in a vertical direction, and a support member 62 .

The light emitting structure 90 may include a first conductivity type semiconductor layer 91 , an active layer 92 and a second conductivity type semiconductor layer 93 .

The first conductivity type semiconductor layer 91 may be formed as a single layer or multiple layers. When the first conductivity type semiconductor layer 91 is an n-type semiconductor layer, it may be a group 3-5 compound semiconductor doped with a first conductivity type dopant. The first conductivity-type dopant is an n-type dopant and may include Si, Ge, Sn, Se, or Te, but is not limited thereto. The first conductivity type semiconductor layer 91 is In _x Al _y Ga _{1 -x- y} N (0≤≤x≤≤1, 0≤≤y≤≤1, 0≤≤x+y≤≤1) It may include a semiconductor material having a composition formula. The first conductive semiconductor layer 91 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, and InP.

The active layer 92 may have any one of a single quantum well structure, a multi quantum well (MQW) structure, a quantum wire structure, or a quantum dot structure. The active layer 92 may include a well layer and a barrier layer formed of a gallium nitride-based semiconductor layer.

For example, the active layer 92 may include one or more pairs of InGaN/GaN, InGaN/InGaN, GaN/AlGaN, InAlGaN/GaN, GaAs/AlGaAs, InGaAs/AlGaAs, GaInP/AlGaInP, GaP/AlGaP, and InGaP/AlGaP. It may be formed into a structure, but is not limited thereto. The well layer may be formed of a material having a band gap lower than that of the barrier layer.

The barrier layer and the well layer of the active layer 92 may be formed of an undoped layer not doped with impurities to improve crystal quality of the active layer, but impurities may be doped in some or all of the active region to lower forward voltage. there is.

The second conductivity-type semiconductor layer 93 is positioned on the active layer 92 and may be formed as a single layer or multiple layers. When the second conductivity type semiconductor layer 93 is a p-type semiconductor layer, it may be a group 3-5 compound semiconductor doped with a second conductivity type dopant. The second conductivity type dopant is a p-type dopant and may include Mg, Zn, Ca, Sr, Ba, etc., but is not limited thereto. The second conductive semiconductor layer 93 may be formed of any one of compound semiconductors such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and GaP.

The second electrode pad 50 may include a contact layer 55, a reflective layer 56, and a bonding layer 57 positioned under the second conductive semiconductor layer 93 of the light emitting structure 90. .

The contact layer 55 contacts the lower surface of the second conductivity type semiconductor layer 93 and may partially extend to the lower surface of the current blocking layer 72 . The contact layer 55 may be a conductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, or ATO, or a metal such as Ni or Ag.

A reflective layer 56 may be formed under the contact layer 55, and the reflective layer 56 may include Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or a combination thereof. It can be formed into a structure comprising at least one layer made of a material selected from the group consisting of. The reflective layer 56 may contact under the second conductivity type semiconductor layer 93 and may make ohmic contact with metal or ohmic contact with a conductive material such as ITO, but is not limited thereto.

A bonding layer 57 may be formed under the reflective layer 56, and the bonding layer 57 may be used as a barrier metal or a bonding metal, and the material may be, for example, Ti, Au, Sn, Ni, It may include at least one of Cr, Ga, In, Bi, Cu, Ag, and Ta and optional alloys.

A channel layer 70 may be disposed below the light emitting structure 90 . The channel layer 70 is formed along the edge of the lower surface of the second conductivity type semiconductor layer 93 and may be formed in a ring shape, loop shape or frame shape. The channel layer 70 includes at least one of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ can include Also, the channel layer 70 may be formed of a metal layer or a semiconductor layer. An inner portion of the channel layer 70 may be disposed under the second conductivity type semiconductor layer 93 , and an outer portion may be positioned further outside the side surface of the light emitting structure 90 .

A support member 62 is formed under the bonding layer 57, and the support member 62 may be formed of a conductive member, the material being copper (Cu-copper), gold (Au-gold), nickel (Ni-nickel), molybdenum (Mo), copper-tungsten (Cu-W), carrier wafer (eg Si, Ge, GaAs, ZnO, SiC, etc.).

As another example, the support member 62 may be implemented as a conductive sheet. The second electrode pad 50 may include the support member 62, and at least one or a plurality of layers of the second electrode pad 50 are formed to have the same width as the support member 62. It can be.

A light extraction structure such as a roughness may be formed on an upper surface of the first conductivity type semiconductor layer 91 . The first electrode pad 51 may be disposed on a flat surface of the upper surface of the first conductivity-type semiconductor layer 91, but is not limited thereto. An insulating layer (not shown) may be further formed on the side and upper surface of the light emitting structure 90, but is not limited thereto.

The current blocking layer 72 overlaps the first electrode pad 51 and has a function of preventing current from being concentrated on the lower portion of the second electrode pad 50 .

The current blocking layer 72 may be made of, for example, an insulating material such as oxide or nitride. For example, the current blocking layer 72 may be formed by selecting at least one from the group consisting of Si _x O _y , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, etc. It is not limited to this. Alternatively, the current blocking layer 72 may include, but is not limited to, a distributed Bragg reflector (DBR) in which layers having different refractive indices are alternately stacked.

Next, the phosphor used in the light emitting device package of the embodiment will be described.

In the embodiment, a molding member 41 may be disposed in the cavity 15, and the molding member 41 may include the phosphor 30 according to the embodiment. The phosphor 30 may include fluorescent materials emitting different peak wavelengths.

For example, the phosphor 30 may include, for example, a first phosphor 31, a second phosphor 32, and a third phosphor 33 that emit light of different peak wavelengths. The phosphor 30 of the embodiment may include at least two types of phosphors, and may include three or more types of phosphors.

For example, the first phosphor 31 may have a light emission center wavelength of 515 nm to 570 nm. For example, the first phosphor 31 is (Lu, Y, Gd) _{3- x} (Al, Ga) ₅ O ₁₂ :Ce ^{3 +} _x , (Y,Gd,Lu,Tb) _3-x (Al ,Ga) ₅ O ₁₂ :Ce _x , (Y, Lu, Gd) _{3- x} (Al, Ga) ₅ O ₁₂ :Ce ^{3 +} _x , La _{3 - x} Si ₆ N ₁₁ :Ce ^{3 +} _x , (Mg , Ca,Sr,Ba) ₂ SiO ₄ :Eu, (Ca,Sr) ₃ SiO ₅ :Eu, (La,Ca) _{3- x} Si ₆ N ₁₁ :Ce _x , α-SiAlON:Eu, β-SiAlON: Eu, Ba ₃ Si ₆ O ₁₂ N ₂ :Eu, Ca ₃ (Sc,Mg) ₂ Si ₃ O ₁₂ :Ce, CaSc ₂ O ₄ :Eu, BaAl ₈ O ₁₃ :Eu, (Ca,Sr,Ba)Al ₂ O ₄ :Eu, (Sr,Ca,Ba)(Al,Ga,In) ₂ S ₄ :Eu, (Ca,Sr) ₈ (Mg,Zn)(SiO ₄ ) _{4 Cl2} :Eu/Mn, ( Ca,Sr,Ba) ₃ MgSi ₂ O ₈ :Eu/Mn, (Ca,Sr,Ba) ₂ (Mg,Zn)Si ₂ O ₇ :Eu, Zn ₂ SiO ₄ :Mn, (Y,Gd)BO ₃ :Tb, ZnS:Cu,Cl/Al, ZnS:Ag,Cl/Al, (Sr,Ca) ₂ Si ₅ N ₈ :Eu, (Li,Na,K) ₃ ZrF ₇ :Mn, (Li,Na, K) ₂ (Ti,Zr)F ₆ :Mn, (Ca,Sr,Ba)(Ti,Zr)F ₆ :Mn, Ba _{0 . 65} Zr _0.35 F _{2. 7} :Mn, (Sr,Ca)S:Eu, (Y,Gd) _{BO 3} :Eu, (Y,Gd)(V,P)O ₄ :Eu, Y ₂ O ₃ :Eu, (Sr,Ca,Ba,Mg) ₅ (PO ₄ ) ₃ Cl:Eu, (Ca,Sr,Ba)MgAl ₁₀ O ₁₇ :Eu, (Ca,Sr,Ba)Si ₂ O ₂ N ₂ : One type or two or more types may be selected from among Eu, 3.5MgO·0.5MgF ₂ ·GeO ₂ :Mn, and the like.

The first phosphor 31 may include a quantum dot, and the quantum dot may include a II-VI compound or a III-V compound semiconductor, and may emit green light. The quantum dots may be, for example, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, GaN, GaP, GaAs, GaSb, InP, InAs, In,Sb, AlS, AlP, AlAs, PbS, PbSe, Ge, Si, CuInS ₂ , CuInSe ₂ and the like, and combinations thereof.

The second phosphor 32 may emit light of a second peak wavelength, for example, a red peak wavelength, by using the light emitted from the light emitting element 25 as an excitation wavelength. The second phosphor 32 may have a light emission central wavelength of 580 nm to 670 nm.

The second phosphor 32 is a compound-based phosphor ^, such as (Ca,Sr)S:Eu ²⁺ or a nitride ^- based phosphor, such as Ca _{1 - x} AlSiN ₃ :Eu ²⁺ _x It may contain a phosphor. For example, the second phosphor 32 may have a composition of (Sr,Ca) _1-x AlSiN ₃ :Eu ²⁺ _x (0.01 ≤ x ≤ 0.3), but is not limited thereto.

The activator of the second phosphor 32 may be a tetravalent ^transition metal ion such as Mn ⁴⁺ or a metal ion selected from ^various rare earth ions or transition metal ions, for example, Eu ²⁺ _, Ce ^{3+ ,} Trivalent ^{rare earth metal ions such as Pr 3+ , Nd 3+ , Sm 3+ , Eu 3+ , Gd 3+ , Tb 3+ , Dy 3+ , Ho 3+ , Er 3+ , Tm 3+ , Yb 3+ , etc.} , Sm ²⁺ , Eu ²⁺ , ^{Yb 2+ divalent} rare earth metal ions such as Mn ²⁺ divalent transition metal ions such ^as Cr ³⁺ or ^{Fe 3+} trivalent transition metal ions, and the like. For example, the second phosphor 32 may be K ₂ Si _{1 -x} F ₆ :Mn ⁴⁺ _x , but is not limited thereto.

As the second phosphor 32 , one type or two or more types may be selected from the red phosphor examples.

The third phosphor 33 may have a third peak wavelength, for example, a light emission center wavelength of 490 nm to 505 nm, using light emitted from the light emitting element 25 as an excitation wavelength. The third phosphor 33 is (Ba, Mg) _{3- a} Si _{6 - b} O _{3 .5- c} N _{8 .5-d} (Li, Cl, F, P) _{1- e} : Eu ^{2 +} _a , Of (Ba, Mg, Ca, Sr) _3-a Si ₆ O _3. N ₈ :Eu ²⁺ _a , (Ba, Mg, Ca, Sr) _{1- a} Si ₂ O _2. N ₂ :Eu ^{2 +} _a It may be any one or more, but is not limited thereto, and the third phosphor 33 may be selected from one type or two or more types in the above examples.

As described above, the first technical problem of the embodiment is to minimize a wavelength range harmful to the human body, to maximize a wavelength range beneficial to the human body, and to improve optical characteristics, for example, a CRI indicator, a light emitting device package and a lighting device. is to provide In addition, the second technical problem of the embodiment is to provide a light emitting device package and a lighting device that can simultaneously satisfy the technical characteristics of improving the luminous flux and the technical characteristics of improving the special CRI index (for example, R9>0).

The embodiment effectively solves the first technical problem and the second technical problem at hand as follows, and these technical solutions and technical effects will be described in detail.

5 is an exemplary view of a wavelength spectrum E1 and a solar wavelength spectrum S of the light emitting device package according to the first embodiment.

<Example 1>

6A is an exemplary view of the wavelength spectrum of the light emitting device package and the phosphor according to the first experimental example, and FIG. 6B is CRI data of the light emitting device package according to the first experimental example, R9 data is about +18, CRI data is about 85 showed

In the light emitting device according to the embodiment, the active layer 92 of the light emitting device 25 has an energy ratio of the second wavelength range of 465 nm to 495 nm greater than the energy ratio of the first wavelength range of 415 nm to 455 nm. ) may include a composition of In _x Al _y Ga _{1 -x- y} N (0.15≤x≤0.20, 0<y<1) layer, but is not limited thereto.

Specifically, FIG. 6A shows a wavelength spectrum (E1) of the light emitting device package according to the first experimental example, a wavelength spectrum (GE1) of a first green phosphor used therein, a wavelength spectrum (GE2) of a second green phosphor, and a first red phosphor. The wavelength spectrum (RE1) of the phosphor is also shown.

The first green phosphor and the second green phosphor employed in the first experimental example may have a (Lu, Y, Gd) _{3- x} (Al, Ga) ₅ O ₁₂ :Ce ^{3 +} _x composition, but are not limited thereto. Peak wavelengths of the first green phosphor and the second green phosphor may be about 525 nm and about 545 nm, respectively, but are not limited thereto. The first red phosphor used in the first experimental example may have a (Ca, Sr) _{1- x} AlSiN3 : Eu ^{2 +} _x composition, and may have a peak wavelength of about 621 nm, but is not limited thereto.

The phosphor used in the first experimental example may occupy about 18 to 19 wt% of the mold, and the first green phosphor, the second green phosphor, and the first red phosphor are about 26.7%, about 67%, and about 6.3%, respectively. It may be a ratio, but is not limited thereto.

According to the embodiment, as shown in FIG. 5, the wavelength range (H) harmful to the human body is minimized and the wavelength range (B) beneficial to the human body is maximized, and the optical characteristics (eg, CRI index) are improved as shown in FIG. 6B. It is possible to provide a light emitting device package and a lighting device having possible technical effects. For example, the R9 data significantly increased to about +20, and the CRI data showed about 86.

Hereinafter, with reference to FIG. 5, the technical effect of minimizing the wavelength range (H) harmful to the human body and maximizing the wavelength range (B) beneficial to the human body will be described in more detail.

In order to increase energy efficiency, the prior art has a high energy ratio in the first wavelength range (415 to 455 nm) (H) that is harmful to the eyes and a low energy ratio in the second wavelength range (465 to 495 nm) (B) that is beneficial to the body. was

For example, referring to FIG. 1, in the prior art, the energy (HC) ratio of the first wavelength range (415 to 455 nm) compared to sunlight reaches about 98%, and the second wavelength range (465 to 495 nm) The energy (BC) ratio of was only about 54%.

On the other hand, the embodiment controls the energy (BE) ratio of the second wavelength range of 465 nm to 495 nm to be greater than the energy (HE) ratio of the first wavelength range of 415 nm to 455 nm of the light emitting element 25 to solve the technical problem. can do.

For example, in the embodiment, the energy (HE) ratio of the first wavelength range in which the light emitting wavelength of the light emitting element 25 is 415 nm to 455 nm can be controlled to 75% or less compared to the energy of the solar light source in the first wavelength range, The energy (BE) ratio of the second wavelength range in which the emission wavelength of the light emitting element 25 is 465 nm to 495 nm can be controlled to be 60% or more compared to the energy of the solar light source in the second wavelength range. For example, an energy ratio of the second wavelength range of 465 nm to 495 nm of the light emitting device 25 may be 100% or more compared to the energy of the solar light source in the second wavelength range.

For example, the energy (HE) ratio of the first wavelength range of 415 nm to 455 nm of the light emitting element 25 can be lowered to about 32% compared to sunlight, while the energy (BE) of the second wavelength range of 465 nm to 495 nm ) ratio can be controlled to about 104% compared to sunlight.

Moreover, the embodiment can improve the energy (BE) ratio of the second wavelength range of 465 nm to 495 nm to about 148% compared to sunlight.

According to the embodiment, the light energy in the second wavelength range (465 to 495 nm) (B) is increased compared to sunlight. , For example, it is necessary for the reflex response of constriction or relaxation of the pupil to protect the eyes, is necessary for circadian entrainment of the human body, helps sleep control through melatonin control, and has the effect of reducing depression. It has the effect of enhancing alertness and concentration, and thus has beneficial effects such as improving work ability, improving learning ability, and strengthening memory.

Accordingly, according to the embodiment, it is possible to provide a light emitting device package and a lighting device capable of minimizing a wavelength range (415 to 455 nm) harmful to the human body and maximizing a wavelength range (465 to 495 nm) beneficial to the human body.

6C and 6D are wavelength spectrum data for explaining optical characteristics of a light emitting device package according to an embodiment.

According to the embodiment, there is a technical effect of securing the luminous flux even when using a long-wavelength phosphor.

That is, according to the embodiment, when using a long-wavelength blue chip in a wavelength range (465 ~ 495nm) beneficial to the human body, the optimal phosphor combination that is advantageous for securing luminous flux can solve the problem of reduced luminous flux expected when using long-wavelength phosphors.

For example, according to the embodiment, it is possible to contribute more to the luminous flux by securing a larger area overlapping the phosphor wavelength spectrum and the luminous function V(λ). That is, according to the embodiment, in the case of employing a long-wavelength blue chip in a wavelength range (465 to 495 nm) beneficial to the human body, a region overlapping with the wavelength spectrum of the phosphor of the embodiment can be further secured by shifting the luminous function V (λ). There is a technical effect of lowering the expected luminous flux when using a long-wavelength phosphor and further improving the luminous flux of the moon.

For example, referring to FIG. 6C, in the embodiment, by securing a larger area where the wavelength spectrum GE1 and the second green wavelength spectrum GE2 of the first green phosphor overlap with the luminous function V(λ), can contribute more to the speed of light. In this case, the wavelength spectrum of the first green phosphor may contribute to improving CIR, and the wavelength spectrum of the second green phosphor may contribute to securing luminous flux, but is not limited thereto.

Referring to FIG. 6D, since the wavelength spectrum (RE1) of the first red phosphor of the experimental example has a shorter wavelength than the wavelength spectrum (R) of the conventional red phosphor, Stoke's Shift, a phenomenon in which the excitation spectrum of the phosphor occurs at a longer wavelength than the absorption spectrum , and the area overlapping with the luminance function V(λ) is larger, so it can contribute more to the luminous flux.

According to the embodiment, it is possible to provide a light emitting device package and a lighting device having technical effects capable of minimizing a wavelength range harmful to the human body, maximizing a wavelength range beneficial to the human body, and improving optical characteristics (eg CRI index). can

In addition, according to the embodiment, it is possible to provide a light emitting device package and a lighting device having technical effects capable of simultaneously satisfying the technical characteristics of luminous flux improvement and special CRI index improvement (eg, R9>0).

<Second Experimental Example>

7A is an exemplary view of a wavelength spectrum of a light emitting device package and a phosphor according to a second experimental example, and FIG. 7B is CRI data of a light emitting device package according to a second experimental example.

Specifically, FIG. 7A shows a wavelength spectrum (E2) of the light emitting device package according to the second experimental example, a wavelength spectrum (GE2) of a second green phosphor used therein, a wavelength spectrum (RE1) of a first red phosphor, and a second red phosphor. The wavelength spectrum (RE2) of the phosphor is also shown.

The second green phosphor used in the second experimental example may have a (Lu, Y, Gd) _{3- x} (Al, Ga) ₅ O ₁₂ :Ce ^{3 +} _x composition, but is not limited thereto. The peak wavelength of the second green phosphor may be about 545 nm, but is not limited thereto.

The first red phosphor and the second red phosphor employed in the second experimental example may have (Ca, Sr) _{1- x} AlSiN3: Eu ^{2 +} _x composition, and peak wavelengths may be about 621 nm and about 626 nm, respectively, but are limited thereto It is not.

The phosphor used in the second experimental example may occupy about 19 to 20 wt% of the mold, and the second green phosphor, the first red phosphor, and the second red phosphor have about 94.7%, about 4.0%, and about 1.3% of the mold, respectively. The mixing ratio may be, but is not limited thereto.

According to the embodiment, as shown in FIG. 5, the wavelength range (H) harmful to the human body is minimized and the wavelength range (B) beneficial to the human body is maximized, and the optical characteristics (eg, CRI index) are improved as shown in FIG. 7B. It is possible to provide a light emitting device package and a lighting device having possible technical effects. For example, the R9 data significantly increased to about +18, and the CRI data showed about 85.

According to the embodiment, it is possible to provide a light emitting device package and a lighting device having technical effects capable of minimizing a wavelength range harmful to the human body, maximizing a wavelength range beneficial to the human body, and improving optical characteristics (eg CRI index). can

In addition, according to the embodiment, it is possible to provide a light emitting device package and a lighting device having technical effects capable of simultaneously satisfying the technical characteristics of luminous flux improvement and special CRI index improvement (eg, R9>0).

<Example 3>

8A is an exemplary view of a wavelength spectrum of a light emitting device package and a phosphor according to a third experimental example, and FIG. 8B is CRI data of a light emitting device package according to a third experimental example.

Specifically, FIG. 8A shows the wavelength spectrum E3 of the light emitting device package according to the third experimental example, the wavelength spectrum GE1 of the first green phosphor used therein, the wavelength spectrum RE1 of the first red phosphor, and the second red phosphor. The wavelength spectrum (RE2) of the phosphor is also shown.

The first green phosphor used in the third experimental example may have a (Lu, Y, Gd) _{3- x} (Al, Ga) ₅ O ₁₂ :Ce ^{3 +} _x composition, but is not limited thereto. The first green phosphor peak wavelength may be about 525 nm, but is not limited thereto.

The first red phosphor and the second red phosphor employed in the third experimental example may have (Ca, Sr) _{1- x} AlSiN3: Eu ^{2 +} _x composition, and peak wavelengths may be about 621 nm and about 626 nm, respectively, but are limited thereto It is not.

The phosphor used in the third experimental example may occupy about 19 to 20 wt% of the mold, and the first green phosphor, the first red phosphor, and the second red phosphor have about 92.1%, about 5.9%, and about 2.0% of the mold, respectively. The mixing ratio may be, but is not limited thereto.

According to the embodiment, as shown in FIG. 5, it is possible to minimize the wavelength range (H) harmful to the human body and maximize the wavelength range (B) beneficial to the human body, and to improve optical characteristics (eg, CRI index) as shown in FIG. 8B. It is possible to provide a light emitting device package and a lighting device having possible technical effects. For example, the R9 data showed a very significant increase to about +38, and the CRI data showed about 87.8.

According to the embodiment, it is possible to provide a light emitting device package and a lighting device having technical effects capable of minimizing a wavelength range harmful to the human body, maximizing a wavelength range beneficial to the human body, and improving optical characteristics (eg CRI index). can

In addition, according to the embodiment, it is possible to provide a light emitting device package and a lighting device having technical effects capable of simultaneously satisfying the technical characteristics of luminous flux improvement and special CRI index improvement (eg, R9>0).

<Second Embodiment>

9A is a cross-sectional view of the light emitting device package 102 according to the second embodiment, and FIG. 9B is a cross-sectional view of the light emitting device 25 in the light emitting device package according to the second embodiment.

The second embodiment may employ technical features of the first embodiment, and the main features of the second embodiment will be described below with reference to FIG. 9C.

9C is a bandgap diagram of an active layer in a light emitting device in a light emitting device package according to a second embodiment.

In the embodiment, the light emitting element 25 may have a higher energy ratio in a second wavelength range of 465 nm to 495 nm than an energy ratio in a first wavelength range of 415 nm to 455 nm.

The active layer 94 of the light emitting device 25 may include an In _x Al _y Ga _{1 -x- y} N (0.06≤x≤0.20, 0<y<1) layer.

In the embodiment, the active layer 94 includes a first active layer 94a having a peak wavelength in the first wavelength range of 415 nm to 455 nm and a first active layer 94a having a peak wavelength in the second wavelength range of 465 nm to 495 nm. can include

For example, the first active layer 94a may include a first quantum well 94W1 having a first bandgap energy Eg1 and a first quantum wall 94B1. The second active layer 94b may include a second quantum well 94W2 having a second bandgap energy Eg2 and a second quantum wall 94B2.

The first bandgap energy Eg1 of the first quantum well 94W1 may be greater than the second bandgap energy Eg2 of the second quantum well 94W2.

For example, the first quantum well 94W1 includes an In _x Al _y Ga _{1 -x- y} N layer (0.06≤x≤0.12, 0<y<1) and has a peak wavelength of 415 nm to 455 nm. can emit light.

In addition, the second quantum well 94W2 includes an In _x Al _y Ga _{1 -x- y} N layer (0.15≤x≤0.20, 0<y<1) and emits an emission wavelength having a peak wavelength of 465 nm to 495 nm. can

10A is an exemplary view of a wavelength spectrum E4 of a light emitting device package according to a second embodiment.

In the second embodiment, the light emitting element 25 may have two peak wavelength regions.

For example, the first quantum well 94W1 of the light emitting device includes an In _x Al _y Ga _{1 -x- y} N layer (0.06≤x≤0.12, 0<y<1) and has a peak wavelength of 415 nm to 455 nm. The second quantum well 94W2 may emit light of a light emission wavelength B1, and the second quantum well 94W2 includes a layer of In _x Al _y Ga _{1 -x- y} N (0.15≤x≤0.20, 0<y<1) and has a peak wavelength The emission wavelength B2 of 465 nm to 495 nm can be emitted.

At this time, the energy ratio of the second wavelength range B2 of 465 nm to 495 nm may be greater than the energy ratio of the first wavelength range B1 of 415 nm to 455 nm in the wavelength spectrum of the light emitting device of the embodiment.

The phosphor 30 in the second embodiment includes at least two of at least one green phosphor, at least one cyan phosphor, and at least one red phosphor, and the light emitting element 25 ), a white light source can be implemented as an excitation wavelength. For example, the phosphor 30 of the second embodiment may include the first phosphor 31 and the second phosphor 32, but is not limited thereto.

10B is an exemplary view of a wavelength spectrum of a light emitting device package and a phosphor according to a fourth experimental example, and FIG. 10C is CRI data of a light emitting device package according to a fourth experimental example.

Specifically, FIG. 10B shows the wavelength spectrum (E4) of the light emitting device package according to the fourth experimental example, the wavelength spectrum (GE4) of the fourth green phosphor used therein, and the wavelength spectrum (RE6) of the sixth red phosphor. will be.

The fourth green phosphor used in the fourth experimental example is (Lu, Y, Gd) _{3- x} (Al, Ga) ₅ O ₁₂ :Ce ^{3 +} _x or (Y, Lu, Gd) _{3- x} (Al, Ga) ) ₅ O ₁₂ :Ce ^{3 +} _x composition, but is not limited thereto. The fourth green phosphor peak wavelength may be about 535 nm, but is not limited thereto.

The sixth red phosphor used in the fourth experimental example may have a (Ca, Sr) _{1- x} AlSiN3 : Eu ^{2 +} _x composition, and may have a peak wavelength of about 610 nm, but is not limited thereto.

The phosphor used in the fourth experimental example may occupy about 19 to 20 wt% of the mold, and this fourth experimental example includes the first phosphor 31 having a PL peak wavelength of 535 nm in the green wavelength region and the red wavelength region. The second phosphor 32 having a PL peak wavelength of 610 nm may be used, and a wavelength spectrum of a white light source having color coordinates (0.3535, 0.3721) and CCT of 4780K may be implemented, but is not limited thereto.

According to the embodiment, as shown in FIG. 10a, the wavelength range (H) harmful to the human body is minimized and the wavelength range (B) beneficial to the human body is maximized, and the optical characteristics (eg, CRI index) are improved as shown in FIG. 10c. It is possible to provide a light emitting device package and a lighting device having possible technical effects. For example, R9 data increased by about +3, and CRI data improved.

According to the embodiment, it is possible to provide a light emitting device package and a lighting device having technical effects capable of minimizing a wavelength range harmful to the human body, maximizing a wavelength range beneficial to the human body, and improving optical characteristics (eg CRI index). can

In addition, according to the embodiment, it is possible to provide a light emitting device package and a lighting device having technical effects capable of simultaneously satisfying the technical characteristics of luminous flux improvement and special CRI index improvement (eg, R9>0).

In particular, according to the second embodiment, the first quantum well 94W1 of the light emitting device includes an In _x Al _y Ga _{1 -x- y} N layer (0.06≤x≤0.12, 0<y<1) and has a peak wavelength A fourth green phosphor having good excitation efficiency at a short wavelength, for example, (Lu, Y, Gd) _{3- x} ( By adopting Al, Ga) ₅ O ₁₂ :Ce ^{3 +} _x or (Y, Lu, Gd) _{3- x} (Al, Ga) ₅ O ₁₂ :Ce ^{3 +} _x , the luminous flux is improved while the harmful wavelength spectrum is minimized. can

In addition, the second quantum well 94W2 includes an In _x Al _y Ga _{1 -x- y} N layer (0.15≤x≤0.20, 0<y<1), and has a peak wavelength of 465 nm to 495 nm. can maximize the distribution of useful wavelength spectrum by emitting light.

11A to 11C are wavelength spectrum comparison data of a light emitting device package according to a second embodiment and a first prior art.

11a to 11c are reflectance curves of the light emitting device package according to the second embodiment and the first prior art, based on which, the technical characteristics of luminous flux improvement and special CRI index improvement (for example, R9 >0), another technical solution principle that overcomes the technical contradiction by simultaneously satisfying the technical characteristics will be described in detail.

Referring to Figure 11a, TCS09 reflectance (T) is one of the standard CRI samples for CRI calculation, in daylight (一光) (appearance under daylight) Strong red, SR is a Ref solar reflectance curve, ER is an embodiment is the reflectance curve of the light emitting device package according to, and CR is the reflectance curve of the prior art.

In the embodiment, in order to increase the R9 value, it should be possible to emit reflected light similar to Ref solar reflection (SR). Based on this, it will be compared with the prior art.

First, referring to FIG. 11A, Ref. Based on the solar reflection (SR), the distribution of the reflection (CR) of the first prior art and the reflection (ER) of the embodiment is compared, and the embodiment is the first prior art in the second wavelength range (465 nm to 495 nm). Compared to the A3 area, the reflected light is similar to sunlight as much as the A3 area, and the reflected light is similar to sunlight as much as the B area in the red phosphor emission wavelength range. had the effect of increasing from 2.7 to 2.7.

Specifically, referring to FIG. 11B, as the reflected light area A2 of the embodiment is improved compared to the reflected light area A1 of the first prior art in the second wavelength range (465 nm to 495 nm), the reflected light is as much as sunlight and sunlight in the A3 area. Made more similar.

In addition, referring to FIG. 11C, as the reflected light ER of the embodiment is improved compared to the reflected light CR of the first prior art in the red phosphor emission wavelength region, the reflected light becomes more similar to sunlight as much as the B region.

Through this, the second embodiment, unlike the prior art, does not use a second RED phosphor having a longer wavelength, so there is no decrease in luminous flux, so the luminous flux is improved, and the special CRI indicator is improved (for example, R9> 0) Technical characteristics It is possible to provide a light emitting device package and a lighting device capable of overcoming technical contradictions by satisfying both at the same time.

In addition, according to the embodiment, it is possible to provide a light emitting device package and a lighting device capable of implementing illumination Middle CRI (Ra>80) or High CRI (Ra>90).

The light emitting device according to the embodiment may be applied to a lighting unit, a display device, a backlight unit, an indicator device, a lamp, a street light, a vehicle lighting device, a vehicle display device, a smart watch, etc., but is not limited thereto.

12 is an exploded perspective view of a lighting device according to an embodiment.

A lighting device according to an embodiment may include a cover 2100 , a light source module 2200 , a radiator 2400 , a power supply unit 2600 , an inner case 2700 , and a socket 2800 . Also, the lighting device according to the embodiment may further include any one or more of the member 2300 and the holder 2500 . The light source module 2200 may include a light emitting device or a light emitting device package according to an embodiment.

The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250. The member 2300 is disposed on the top surface of the radiator 2400 and has guide grooves 2310 into which a plurality of light source units 2210 and a connector 2250 are inserted.

The holder 2500 blocks the receiving groove 2719 of the insulating part 2710 of the inner case 2700. Thus, the power supply unit 2600 accommodated in the insulation unit 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510 .

The power supply unit 2600 may include a protrusion 2610, a guide unit 2630, a base 2650, and an extension unit 2670. The inner case 2700 may include a molding part together with the power supply part 2600 therein. The molding part is a part where the molding liquid is hardened, and allows the power supply part 2600 to be fixed inside the inner case 2700 .

Features, structures, effects, etc. described in the embodiments above are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified with respect to other embodiments by those skilled in the art in the field to which the embodiments belong. Therefore, contents related to these combinations and modifications should be construed as being included in the scope of the embodiments.

Although the above has been described focusing on the embodiment, this is only an example and does not limit the embodiment, and those skilled in the art in the field to which the embodiment belongs may find various things not exemplified above to the extent that they do not deviate from the essential characteristics of the embodiment. It will be appreciated that variations and applications of branches are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the embodiments set forth in the appended claims.

A package body 11, a light emitting element 25, a molding member 41,
Phosphor 30, first phosphor 31, second phosphor 32, third phosphor 33

Claims (6)

package body;
a light emitting element disposed on the package body including an active layer;
a molding member disposed on the light emitting element;
Including a phosphor disposed in the molding member,
In the light emitting element, the energy ratio of the second wavelength range of 465 nm to 495 nm is greater than the energy ratio of the first wavelength range of 415 nm to 455 nm,
The active layer of the light emitting device includes an In _x Al _y Ga _{1 -x- y} N (0.15≤x≤0.20, 0<y<1) layer,
The phosphor includes at least three types of at least one green phosphor, at least one cyan phosphor, and at least one red phosphor, and uses the light emission wavelength of the light emitting device as an excitation wavelength as a white light source. A light emitting device package implemented.
delete delete package body;
a light emitting element disposed on the package body including an active layer;
a molding member disposed on the light emitting element;
Including a phosphor disposed in the molding member,
In the light emitting element, the energy ratio of the second wavelength range of 465 nm to 495 nm is greater than the energy ratio of the first wavelength range of 415 nm to 455 nm,
The active layer of the light emitting device includes an In _x Al _y Ga _{1 -x- y} N layer (0.06≤x≤0.20, 0<y<1),
The active layer includes a first active layer having a peak wavelength in the first wavelength range of 415 nm to 455 nm and a second active layer having a peak wavelength in the second wavelength range of 465 nm to 495 nm,
The phosphor includes at least two of at least one green phosphor, at least one cyan phosphor, and at least one red phosphor, and uses the emission wavelength of the light emitting device as an excitation wavelength to generate a white light source. A light emitting device package implemented.
According to claim 4,
The first quantum well of the first active layer includes an In _x Al _y Ga _{1 -x- y} N (0.06≤x≤0.12, 0<y<1) layer and emits light with a peak wavelength of 415 nm to 455 nm,
The second quantum well of the second active layer includes an In _x Al _y Ga _{1 -x- y} N layer (0.15≤x≤0.20, 0<y<1) and emits light having a peak wavelength of 465 nm to 495 nm. device package.
A lighting device comprising a light emitting unit having the light emitting device package according to any one of claims 1 or 4 to 5.

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