KR20180066414A - Phosphor composition, light emitting device package and lighting apparatus - Google Patents

Abstract

The present invention relates to a phosphor composition, a light emitting device package including the same, and a lighting device. According to an embodiment of the present invention, the phosphor composition may be a red phosphor composition having chemical formula, A_aB_bC_cD_d:RE_e. A includes a divalent element of at least one element among Mg, Ca, Sr, and Ba. B includes at least one element among tetravalent elements of Ge, Si, Sn, and C and/or at least one element among trivalent elements of Sc, Y, B, Al, Ga, and In. C includes at least one among O, S, and N. D includes at least one among F, Cl, Br, I, and Mn. RE includes at least one among Mn or rare earth elements of La, Ce, Pr, Sm, Eu, Gd, Tb, Dy, Er, Tm, Yb, and Lu. The present invention is able to remarkably improve a color reproduction ratio.

Description

TECHNICAL FIELD [0001] The present invention relates to a phosphor composition, a light emitting device package including the phosphor composition,

Embodiments relate to a phosphor composition, a light emitting device package including the phosphor composition, and a lighting apparatus.

Semiconductor devices including compounds such as GaN and AlGaN have many merits such as wide and easy bandgap energy, and can be used variously as light emitting devices, light receiving devices, and various diodes.

Particularly, a light emitting device such as a light emitting diode or a laser diode using a semiconductor material of Group 3-5 or 2-6 group semiconductors can be applied to various devices such as a red, Blue, and ultraviolet rays. By using fluorescent materials or combining colors, it is possible to realize a white light beam with high efficiency. Also, compared to conventional light sources such as fluorescent lamps and incandescent lamps, low power consumption, Speed, safety, and environmental friendliness.

In addition, when a light-receiving element such as a photodetector or a solar cell is manufactured using a semiconductor material of Group 3-5 or Group 2-6 compound semiconductor, development of a device material absorbs light of various wavelength regions to generate a photocurrent , It is possible to use light in various wavelength ranges from the gamma ray to the radio wave region. It also has advantages of fast response speed, safety, environmental friendliness and easy control of device materials, so it can be easily used for power control or microwave circuit or communication module.

Accordingly, the semiconductor device can be replaced with a transmission module of an optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, White light emitting diodes (LEDs), automotive headlights, traffic lights, and gas and fire sensors. In addition, semiconductor devices can be applied to high frequency application circuits, other power control devices, and communication modules.

For example, nitride semiconductors among light emitting devices have attracted great interest in the development of optical devices and high output electronic devices due to their high thermal stability and wide band gap energy. Particularly, a blue light emitting element, a green light emitting element, an ultraviolet (UV) light emitting element, and a red (RED) light emitting element using a nitride semiconductor are commercially available and widely used.

On the other hand, as a method of implementing white light using a light emitting device, there are a method of utilizing a single chip and a method of utilizing a multi chip.

For example, in the case of implementing white light by a single chip, a method of using light emitted from a blue LED and exciting at least one of the phosphors using the light to obtain white light is used.

In addition, a method of realizing white light in the form of a single chip is divided into a method of combining a fluorescent material on a blue or ultraviolet (UV) light emitting diode chip and a method of producing a multi-chip type and combining them to obtain white light.

In the case of a multi-chip type, there is a typical method of manufacturing three kinds of chips of RGB (Red, Green, Blue).

In the OLED market, where color quality and color gamut are high, the display market is growing, and the ratio of LCDs using BLU (Back Light Unit) is gradually decreasing. To cope with OLED, There is a technical need to remarkably improve the contrast color reproduction ratio.

In order to meet such technical demands, it is necessary to improve the color quality of the white light source of the LED in order to improve the color reproduction ratio of the LED light source, and a green fluorescent substance and a red fluorescent substance are presently present on the blue chip And white light is implemented by mixing.

For example, conventional LED technology implements white light by combining a green phosphor of the β-SiAlON: Eu ^{2 +} composition and a red phosphor of the K ₂ SiF ₆ : Mn ^{4 +} composition on the blue LED chip, (NTSC_%) ratio of the white light source is about 92%, which is a technical limitation that is not competitive with the color reproduction rate of the OLED.

Recently, a variety of red phosphors applicable to LEDs have been developed and the color reproduction ratio has been increased in comparison with the LED chips applied to the previous BLUs, but the OLEDs are still in a technical limit.

1 is an illustration of an example of a CIE color coordinate and an NTSC color reproduction range (N).

Referring to FIG. 1, as a solution for improving the color reproducibility in conventional LEDs, the emission wavelength of the green phosphor or the emission wavelength of the red phosphor is set to about 525 nm to 515 nm as a green wavelength and about 660 nm to 500 nm as a red wavelength, It has to be moved to a deeper side at 670 nm, and the color reproduction ratio can be increased by satisfying this portion.

However, the conventional K ₂ SiF ₆ : Mn ^{4 +} red phosphor has a disadvantage that the emission wavelength is not shifted to a long wavelength, and other red phosphors have the same problem, and it is difficult to improve the color reproduction ratio in the red region There was a problem.

Further, in the prior art to the illumination red phosphor nitride (Nitride) based phosphor of _{(Sr, Ca) AlSiN 3:} Eu 2 +, (Sr, Ca, Ba) 2 Si 5 N 8: Although possible Eu ^{2 +} application, Nitride Series phosphors move from the center wavelength of 600 nm to the range of about 660 nm to 670 nm, there is a problem that luminous efficiency is drastically reduced and luminous flux is lowered.

Embodiments provide a phosphor composition capable of remarkably improving a color reproduction rate, a light emitting device package including the phosphor composition, and a lighting apparatus.

Also, the embodiments are to provide a phosphor composition having excellent luminous efficiency and remarkably improved luminous flux, a light emitting device package including the same, and a lighting device.

The phosphor composition according to the embodiment has the formula A _a B _b C _c D _d : RE _e May be a red phosphor composition. Wherein A includes at least one or more divalent elements of Mg, Ca, Sr, and Ba, B is at least one of Ge, Si, Sn, and C and / Wherein at least one of Y, B, Al, Ga and In comprises C, at least one of O, S and N and D is at least one of F, Cl, Br, And RE may include at least one element selected from the group consisting of Mn or rare earth elements La, Ce, Pr, Sm, Eu, Gd, Tb, Dy, Er, Tm, Yb and Lu.

Also, the light emitting device package according to the embodiment may include the phosphor.

Further, the illumination device according to the embodiment may include the light emitting device package.

Embodiments can provide a phosphor composition capable of remarkably improving a color reproduction rate through a red phosphor capable of realizing an emission peak of a long wavelength, a light emitting device package including the same, and a lighting apparatus.

In addition, the embodiment can provide a phosphor composition capable of remarkably improving the luminous flux through a red phosphor capable of realizing an emission peak of a long wavelength, a light emitting device package including the same, and a lighting apparatus.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an exemplary illustration of a CIE color coordinate and an NTSC color reproduction range (N). FIG.
2 is a sectional view of a package of a light emitting device according to the first embodiment;
Fig. 3 shows emission wavelength data in the embodiment. Fig.
4 shows the excitation wavelength data in the embodiment.
Fig. 5 shows emission data in the case of Sc substitution in the embodiment. Fig.
Fig. 6 shows emission data upon Ga substitution in the embodiment. Fig.
7 is a view illustrating an example of a process of manufacturing a phosphor in a light emitting device according to an embodiment.
8A to 8C are phosphor photographic data in a light emitting device according to an embodiment.
9 is a sectional view of a package of a light emitting device according to the second embodiment.
10 is a perspective view of a lighting apparatus according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS Fig.

In the description of the embodiments, in the case where each element is described as being formed "on or under", an upper or lower (on or or) under includes both the two configurations being directly in contact with each other or one or more other configurations being indirectly formed between the two configurations. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction based on one configuration.

The semiconductor device may include various electronic devices such as a light emitting device and a light receiving device. The light emitting device and the light receiving device may include the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer. The semiconductor device according to the embodiment may be a light emitting device. The light emitting device emits light by recombination of electrons and holes, and the wavelength of the light is determined by the energy band gap inherent to the material. Thus, the light emitted may vary depending on the composition of the material.

(Example)

2 is a sectional view of the package 101 of the light emitting device according to the first embodiment.

2, the light emitting device package 101 of the embodiment includes at least one of a body 11, a plurality of lead frames 21 and 23, a light emitting chip 25, a phosphor composition 30, and a molding member 41 Or more.

For example, the light emitting device package 101 of the embodiment includes a body 11, a plurality of lead frames 21, 23 disposed on the body 11, and a plurality of lead frames 21, And a molding member 41 disposed on the light emitting chip 25 and having the phosphor composition 30. The phosphor composition 30 may include the first phosphor 31 and the second phosphor 32, but is not limited thereto.

The body 11 may be formed of a material having a reflectance higher than that of the light emitted by the light emitting chip 25, for example, a material having a reflectivity of 70% or more.

The body 11 may be defined as a non-transparent material when the reflectance is 70% or more.

The body 11 may be formed of a resin-based insulating material, for example, a resin material such as polyphthalamide (PPA). Alternatively, a metal oxide may be added to the body 11 in a resin material such as epoxy or silicon, and the metal oxide may include at least one of TiO ₂ , SiO ₂ , and Al ₂ O ₃ .

The body 11 may include a silicone-based material, an epoxy-based material, or a plastic material, and may be formed of a thermosetting resin, or a material having high heat resistance and high light resistance.

In the body 11, an acid anhydride, an antioxidant, a release agent, a light reflector, an inorganic filler, a curing catalyst, a light stabilizer, a lubricant, and titanium dioxide may be selectively added.

The body 11 may be formed of at least one member selected from the group consisting of an epoxy resin, a modified epoxy resin, a silicone resin, a modified silicone resin, an acrylic resin, and a urethane resin.

For example, the body 11 may be formed by mixing an epoxy resin composed of triglycidyl isocyanurate, hydrogenated bisphenol A diglycidyl ether or the like and an epoxy resin such as hexahydrophthalic anhydride, 3-methylhexahydrophthalic anhydride 4-methylhexahydro (1,8-Diazabicyclo (5,4,0) undecene-7) as a curing accelerator in an epoxy resin and ethylene glycol, titanium oxide pigment and glass fiber as a cocatalyst were added to the epoxy resin , And a solid epoxy resin composition which is partially cured by heating to be B-staged can be used. However, the present invention is not limited thereto.

The embodiment can reduce the light transmitted through mixing the light-blocking material or the diffusing agent in the body 11. [ In order to have a predetermined function, the body 11 may be formed by appropriately mixing at least one member selected from the group consisting of a diffusing agent, a pigment, a fluorescent substance, a reflective substance, a light shielding substance, a light stabilizer and a lubricant in a thermosetting resin can do.

The body 11 may include a cavity 15 which is recessed at a predetermined depth from an upper surface of the body 11 and is opened at an upper portion. The cavity 15 may be formed in the form of a concave cup structure, an open structure, or a recess structure, but is not limited thereto.

The cavity 15 has a width that gradually increases as it goes up, so that the light extraction efficiency can be improved.

A plurality of lead frames, for example, first and second lead frames 21 and 23, may be disposed on the body 11. The first and second lead frames 21 and 23 may be disposed on the bottom of the cavity 15 and the outer sides of the first and second lead frames 21 and 23 may be connected to the body 11 And may be exposed on at least one side of the body 11. The lower portions of the first lead frame 21 and the second lead frame 23 may be exposed to a lower portion of the body 11 and may be mounted on a circuit board to receive power.

As another example of the first and second lead frames 21 and 23, at least one or both of the first and second lead frames 21 and 23 may be formed in a concave cup- Or recessed grooves or holes for engagement with the body 11, but are not limited thereto. The light emitting chip 25 may be disposed in the concave cup shape, but the present invention is not limited thereto.

The first lead frame 21 and the second lead frame 23 are made of a metal material such as titanium, copper, nickel, gold, chromium, tantalum, And may include at least one of tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), and phosphorous (P).

A light emitting chip 25 may be disposed on the first lead frame 21 and the light emitting chip 25 may be bonded on the first lead frame 21 with a bonding member. The light emitting chip 25 may be connected to at least one of the first and second lead frames 21 and 23 by a connecting member 27, but the present invention is not limited thereto. The connecting member 27 may include a wire made of a conductive material such as a metal.

The light emitting chip 25 can emit a blue peak wavelength. The light emitting chip 25 may emit a blue peak wavelength, for example, a peak wavelength in the range of 400 nm to 470 nm. In addition, the blue light emitting element 25 of the embodiment can emit blue peak wavelength in the emission wavelength range of 430 nm to 460 nm.

In an embodiment, the light emitting chip 25 may include a plurality of light emitting chips. For example, the light emitting chip 25 may include a first light emitting chip (not shown) and a second light emitting chip (not shown) having different peak wavelengths. For example, the light emitting chip 25 may include a first light emitting chip having a center peak wavelength of about 350 nm to 430 nm and a second light emitting chip having a center peak wavelength of about 430 nm to 470 nm.

The light emitting chip 25 may include at least one of a group II-VI compound and a group III-V compound. The light emitting chip 25 may be formed of a compound selected from the group consisting of, for example, GaN, AlGaN, InGaN, AlInGaN, GaP, AlN, GaAs, AlGaAs, InP and mixtures thereof.

A molding member 41 may be disposed in the cavity 15 and the molding member 41 may include a phosphor composition 30 according to an embodiment of the present invention. The phosphor composition 30 may include a fluorescent material that emits different peak wavelengths.

The phosphor composition 30 may include, for example, a first phosphor 31 and a second phosphor 32 that emit different peak wavelengths. The first phosphor 31 may include one or more kinds of phosphors. For example, the first phosphor may be a red phosphor emitting a first peak wavelength, for example, red light, . ≪ / RTI >

One of the problems of the embodiment is to provide a phosphor composition capable of remarkably improving the color reproduction rate, a light emitting device package including the phosphor composition, and a lighting apparatus.

Another object of the present invention is to provide a phosphor composition having excellent luminous efficiency and remarkably improved luminous flux, a light emitting device package including the same, and a lighting apparatus.

Fig. 3 shows emission wavelength data in the embodiment, and Fig. 4 shows excitation wavelength data in the embodiment.

Specifically, the light emitting wavelength data and the excitation wavelength data for the first embodiment (E1), the second embodiment (E2), the third embodiment (E3), and the fourth embodiment (E4) are shown.

First, the phosphor composition according to the first embodiment will be described. The second to fourth embodiments are more improved embodiments than the phosphor composition of the first embodiment.

As described above, the emission wavelength of the red phosphor must be shifted to a deeper side as shown in FIG. 1 as a solution for improving the color reproducibility in the conventional LED. Conventionally, the K ₂ SiF ₆ : Mn ^{4 +} red phosphor There is a disadvantage in that the emission wavelength is not shifted to a long wavelength, and other red phosphors have the same problem.

The phosphor composition 30 according to the embodiment for solving such a problem is a red phosphor composition of the first embodiment, which includes a red phosphor of the (Sr, Mg) GeOF: Mn ^{4 +} series as a red phosphor composition, Can be realized.

Particularly, according to the embodiment, by developing the red phosphor of the first embodiment of the new and differentiated (Sr, Mg) GeOF: Mn ^{4 +} series, the emission peak having the maximum intensity is improved to about 650 nm to 670 nm, The color reproduction rate can be remarkably improved to 100% or more. For example, referring to FIG. 3, according to the embodiment, the full width at half maximum (FWHM) of the red phosphor E1 of the first embodiment can be 12 nm to 22 nm, and the color purity can be remarkably improved by such a narrow half width.

The red phosphor of the first embodiment may include a (Sr, Mg) GeOF: Mn ^{4 +} series red phosphor. For example, the red phosphor of the first embodiment has a composition of (Sr, Mg) _a Ge _b O _c F _d : Mn ^{4 +} _e , 0 <a? 10, 0 <b? ? 10, 0? D?? 5, 0? E?? 0.3. It is possible to realize an optimum phosphor characteristic within the composition range of each of the above elements, and if it exceeds the above range, the luminescent characteristics of the phosphor may be deteriorated due to inconsistency of the phosphor composition ratios.

The CIE implementation range of the white LED light source implemented by the first embodiment can realize a red light source having a color coordinate range of Cx 0.607 to 0.617 Cy = 0348 to 0.358. For example, the composition of the first exemplary embodiment the red phosphor is (Sr, Mg) ₃ F ₄ GeO _2: Mn ⁴⁺ may be, at this time, may be Cx = 0.612, Cy = 0.353.

In the first embodiment, the range of the excitation wavelength of the red phosphor is 350 nm to 500 nm, and the range of the emission wavelength of the red phosphor of the first embodiment is 650 nm to 720 nm. In the first embodiment, the emission peak having the maximum intensity of the red phosphor may be 650 nm to 670 nm. The full width at half maximum (FWHM) of the red phosphor of the first embodiment may be 12 nm to 22 nm.

Further, in the first embodiment, the composition of the red phosphor is (Sr _x , Mg _y ) _a Ge _b O _c F _d : Mn ^{4 +} _e (where 0 <a≤≤10, 0 <b≤≤5, c?? 10, 0? d?? 5, 0? e? 0.3).

At this time, the composition (x) of Sr in the composition of the red phosphor of the first embodiment may be equal to or smaller than the composition (y) of Mg. Or the composition (x) of Sr in the red phosphor according to the first embodiment may be smaller than the composition (y) of Mg. According to the first embodiment, the excitation efficiency and the luminescence characteristics are excellent when the ratio of Sr and Mg is 1: 3, and as the ratio of Sr is relatively increased and the proportion of Mg is decreased, But it showed excellent luminescence characteristics as compared with those having the best characteristics in the comparative examples.

3, 5 and 6, the characteristics of the phosphor of the second, third, and fourth embodiments will be described in detail.

In the second to fourth embodiments, the basic formula of the phosphor is A _a B _b C _c D _d : RE _e Lt; / RTI &gt; Wherein A includes at least one or more divalent elements of Mg, Ca, Sr, and Ba, B is at least one of Ge, Si, Sn, and C and / Wherein at least one of Y, B, Al, Ga and In comprises C, at least one of O, S and N and D is at least one of F, Cl, Br, And RE may include at least one element selected from the group consisting of Mn or rare earth elements La, Ce, Pr, Sm, Eu, Gd, Tb, Dy, Er, Tm, Yb and Lu.

For example, the composition of the second embodiment, the phosphor composition (E2) is _{(Sr, Mg) a (Ge} , Sc) b O c F d: a _{^{Mn 4 + e, 0 <a≤10}} , 0 <b≤5 , 1 <c? 10, 0 <d? 5, 0 <e? 0.3. For example, the composition of the phosphor composition 2 (E2) is _{(Sr, Mg) 4 (Ge} , Sc) O 3 F 2: may be a Mn ^{4 +.}

It is possible to realize an optimum phosphor characteristic within the composition range of each of the above elements, and if it exceeds the above range, the luminescent characteristics of the phosphor may be deteriorated due to inconsistency of the phosphor composition ratios. The CIE implementation range of the white LED light source implemented by the second embodiment can realize a red light source having a color coordinate range of Cx = 0.625 to 0.635 and Cy = 0.335 to 0.345. For example, the productivity of the red phosphor according to the second embodiment is (Sr, Mg) 4 (Ge , Sc) O 3 F 2: Mn ^{4 +} may be a case of Cx = 0.630, Cy = 0.340.

Fig. 5 shows emission data upon Sc substitution in the second embodiment. As shown in Fig. 5, the light emission intensity of the phosphor composition (E2) according to the second example was improved by Sc substitution.

For example, referring to FIGS. 5 and 3, when the red phosphor according to the second embodiment is (Sr, Mg) 4 (Ge, Sc) O ₃ F ₂ : Mn ⁴⁺ , , The half width of the second embodiment is slightly reduced to about 17 nm at the half width of the (Sr, Mg) ₄ GeO ₃ F ₂ : Mn ^{4 +} of the first embodiment, while the emission intensity of the second embodiment is about 67 %, The light emission luminance was increased by about 54%, and the light emission luminance (PL) characteristic of about 154% as compared with the first embodiment was improved. At this time, the emission main peak of the red phosphor of the second embodiment may be about 661 nm, but is not limited thereto.

Referring to FIG. 3, the phosphor composition E2 of the second embodiment exhibits a luminous intensity of about 54% higher than that of the phosphor composition (E1) of the first embodiment, As the light emitting luminance (PL) characteristic of about 154% as compared with the embodiment is improved, high CRI implementation of high color rendering is possible. For example, according to the phosphor composition (E2) of the second embodiment, it is possible to realize CRI> 90, R > 0 or more with a high CRI illumination white LED light source of high color rendering.

Accordingly, it is possible to provide a phosphor composition, a light emitting device package, and a lighting device including the same that can remarkably improve a color reproduction rate through a red phosphor capable of realizing an emission peak of a long wavelength of 650 nm to 720 nm.

In addition, the productivity of the third embodiment, the phosphor composition (E3) is _{(Sr, Mg) a (Ge} , Ga) b O c F d: a _{^{Mn 4 + e, 0 <a≤10}} , 0 <b≤5, 1 < c? 10, 0 &lt; d? 5, 0 &lt; e? 0.3. It is possible to realize an optimum phosphor characteristic within the composition range of each of the above elements, and if it exceeds the above range, the luminescent characteristics of the phosphor may be deteriorated due to inconsistency of the phosphor composition ratios. For example, the composition of the third phosphor composition (E3) is _{(Sr, Mg) 4 (Ge} , Ga) O 3 F 2: Mn may be a ^{4 +} is not a third fluorescent material is not limited thereto.

The CIE implementation range of the white LED light source implemented by the third embodiment can realize a red light source having a color coordinate range of Cx = 0.626 to 0.636 and Cy = 0.335 to 0.345. For example, the composition of the red phosphor according to the third embodiment _{(Sr, Mg) 4 (Ge} , Ga) O 3 F 2: Mn ^{4 +} may be a case of Cx = 0.631, Cy = 0.340.

6 is emission data upon Ga substitution in the embodiment. As shown in Fig. 6, in the phosphor composition (E3) according to the third embodiment, the light emission intensity was improved by Ga substitution.

For example, referring to FIG. 6 and FIG. 3, when the red phosphor according to the third embodiment is (Sr, Mg) 4 (Ge, Ga) O ₃ F ₂ : Mn ⁴⁺ , The half width of the third embodiment is significantly increased to about 25 nm at a half width of ¹⁹ nm of the (Sr, Mg) ₄ GeO ₃ F ₂ : Mn ^{4 +} of the first embodiment, and the emission intensity of the third embodiment is about 25% The light emission luminance is increased by about 58% due to the combined technical effect, and the second embodiment has a remarkable effect that the light emission luminance (PL) characteristic of about 158% is improved as compared with the first embodiment. At this time, the emission main peak of the third embodiment was about 662 nm.

Referring to FIG. 3, the phosphor composition (E3) of the third embodiment has an increase in the half-value width and an increase in the intensity of light compared to the phosphor composition (E1) of the first embodiment, Significantly increased light emission characteristics can be realized in a BLU or a display.

Accordingly, it is possible to provide a phosphor composition capable of remarkably improving the luminous flux through a red phosphor capable of realizing an emission peak of a long wavelength of 650 nm to 720 nm, a light emitting device package including the same, and a lighting apparatus.

In addition, the composition of the fourth embodiment, the phosphor composition (E4) is _{(Sr, Mg) a (Ge} , Ga, Sc) b O c F d: Mn 4 + e may be, 0 <a≤10, 0 <b≤ 5, 1 <c? 10, 0 <d? 5, 0 <e? 0.3. It is possible to realize an optimum phosphor characteristic within the composition range of each of the above elements, and if it exceeds the above range, the luminescent characteristics of the phosphor may be deteriorated due to inconsistency of the phosphor composition ratios. For example, the composition of the fourth embodiment, the phosphor composition (E4) is _{(Sr, Mg) 4 (Ge} , Ga, Sc) O 3 F 2: Mn may be a ^{+ 4} is not limited thereto.

The CIE implementation range of the white LED light source implemented by the fourth embodiment can realize a red light source having a color coordinate range of Cx = 0.633 to 0.643 and Cy = 0.331 to 0.341. For example, when the composition of the red phosphor according to the fourth embodiment is (Sr, Mg) ₄ (Ge, Ga, Sc) O ₃ F ₂ : Mn ^{4 +} , Cx = 0.638 and Cy = 0.336.

3, the fourth embodiment of a phosphor composition (E4) The _{(Sr, Mg) 4 (Ge} , Ga, Sc) O 3 F 2: in place of the Mn ^{4 +} a case, Sc, is a Ga element Ge At the same time, the half width of the fourth embodiment increases from about 19 nm, which is the half width of the (Sr, Mg) ₄ GeO ₃ F ₂ : Mn ⁴⁺ of the first embodiment, to about 28 nm, The light emission luminance is further increased by about 101% to improve the light emission luminance (PL) characteristic of about 201% as compared with the first embodiment. At this time, the emission main peak of the red phosphor of the fourth embodiment may be about 663 nm, but is not limited thereto.

The phosphor composition (E4) according to the fourth embodiment exhibits a further increase in luminous intensity (Intensity) of about 48% as compared with the phosphor composition (E1) according to the first embodiment, and the half width (FWHM) CRI implementation is possible. For example, the phosphor composition (E4) of the fourth embodiment contains 80% of NTSC, 130% of sRGB, 90% of DCI, BT. 2020 can be implemented more than 60%.

Accordingly, the embodiment can provide a phosphor composition capable of remarkably improving the color reproduction rate through a red phosphor capable of realizing an emission peak of a long wavelength, a light emitting device package including the same, and a lighting apparatus. For example, the color coordinates that can be realized through the red phosphor according to the first to fourth embodiments may be Cx 0.607 to 0.643 and Cy = 0.331 to 0.358.

In addition, the embodiment can provide a phosphor composition capable of remarkably improving the luminous flux through a red phosphor capable of realizing an emission peak of a long wavelength, a light emitting device package including the same, and a lighting apparatus.

FIG. 7 is a view illustrating an example of a phosphor manufacturing process in the light emitting device according to the second to fourth embodiments, and the embodiment is not limited to the following phosphor manufacturing method.

_{First, MgO, MgF 2, SrF 2} , GeO 2, Ga 2 O 3, Sc 2 O 3, to prepare a raw material of _{MnCO 3 (S110), (Sr} , Mg) a (Ge, Ga, Sc) b O _c F _d : Mn ^{4 +} _e , and the raw materials are mixed with a predetermined induction using a solvent (S120). In this case, ethanol or acetone except water may be used as the solvent.

Thereafter, a phosphor is synthesized in an air atmosphere at a synthesis temperature of about 1,000 ° C to 1,300 ° C (S 130).

Thereafter, the fired phosphor is dried in an oven through a ball milling process and a cleaning process (S140) using zirconia or a glass ball (S150).

Then, the dried phosphor is analyzed for the luminescence characteristics of the phosphor through PL analysis (S160). The excitation wavelength can range from about 350 nm to 500 nm, the emission wavelength range is about 600 nm to 720 nm, and the emission peak having the maximum intensity can be at a level of 661 nm ± 5 nm.

8A is phosphor photographic data in the light emitting device according to the first embodiment, FIG. 8B is phosphor photographic data in the light emitting device according to the second embodiment, and FIG. 8C is phosphor photographic data in the light emitting device according to the third embodiment .

Next, the second phosphor 32 which is a green phosphor in the embodiment will be described.

In the embodiment, the ratio of the second fluorescent material 32 as the green fluorescent material is about 35% to 50%, the ratio of the first fluorescent material 31 as the red fluorescent material is about 50% to about 65% (11) The total amount of the phosphor composition (30) may be about 25% to 80%.

According to the embodiment, the CSP (Chip Scale PKG) or the vertical type LED may be 100 wt% or more. The wavelength of the blue light emitting chip or the UV light emitting chip applicable at this time may be about 430 nm to 460 nm, But it is not limited thereto.

In the embodiment, the second phosphor 32 may be a green phosphor and emit a peak wavelength of 570 nm or less, for example, 540 nm to 560 nm. The green phosphor 32 may have a peak wavelength range of 525 nm to 545 nm.

The second phosphor 32 is, for example, (Y, Gd, Lu, Tb) 3 (Al, Ga) 5 O 12: Ce, (Mg, Ca, Sr, Ba) 2 SiO 4: Eu, (Ca, Sr _{) 3 SiO 5: Eu, (} La, Ca) 3 Si 6 N11: Ce, α-SiAlON: Eu, β-SiAlON: Eu, Ba 3 Si 6 O 12 N 2: Eu, Ca 3 (Sc, Mg) 2 (Al, Ga, In) ₂ (Ca, Sr, Ba) Al ₂ O ₄ : Eu, Si ₃ O ₁₂ : Ce, CaSc ₂ O ₄ : Eu, BaAl ₈ O ₁₃ : Eu, _{S 4: Eu, (Ca,} Sr) 8 (Mg, Zn) (SiO 4) 4 C l2: Eu / Mn, (Ca, Sr, Ba) 3 MgSi 2 O 8: Eu / Mn, (Ca, Sr, _{Ba) 2 (Mg, Zn)} Si 2 O 7: Eu, Zn 2 SiO 4: Mn, (Y, Gd) BO 3: Tb, ZnS: Cu, Cl / Al, ZnS: Ag, Cl / Al, (Sr _{, Ca) 2 Si 5 N 8} : Eu, (Li, Na, K) 3 ZrF 7: Mn, (Li, Na, K) 2 (Ti, Zr) F 6: Mn, (Ca, Sr, Ba) ( Ti, Zr) F ₆ : Mn, Ba _{0 . 65 Zr 0 .35 F 2. 7:} Mn, (Sr, Ca) S: Eu, (Y, Gd) BO 3: Eu, (Y, Gd) (V, P) O 4: Eu, Y 2 O 3 : Eu, (Sr, Ca, Ba, Mg) 5 (PO 4) 3 Cl: Eu, (Ca, Sr, Ba) MgAl 10 O 17: Eu, (Ca, Sr, Ba) Si 2 O 2 N 2: Eu, 3.5MgO 0.5MgF and ₂ and GeO _2: is one kind or two or more from among Mn, etc. to be selected.

For example, the second phosphor 32 may include a green phosphor of the β-SiAlON: Eu series. For example, the green phosphor 32 may be a phosphor composition having a composition of? - Si _{6 - z} Al _z O _z N _{8 - z} : Eu ^{2 +} _z (0.01?? Z?? 5.99) It is not.

The second phosphor 32 may include a quantum dot, and the quantum dot may include a II-VI compound or a III-V compound semiconductor, and may emit green light. The quantum dot is, for example, ZnS, ZnSe, ZnTe, CdS , CdSe, CdTe, GaN, GaP, GaAs, GaSb, InP, InAs, In, Sb, AlS, AlP, AlAs, PbS, PbSe, Ge, Si, CuInS 2, CuInSe _2, and the like, and combinations thereof.

(Additional Example for Green Phosphor)

In the comparative example, a green phosphor emitting a peak wavelength of 570 nm or less, for example, 540 nm to 560 nm was employed.

On the other hand, in the additional embodiment, the red phosphor 31 according to the above-described embodiment is employed, and the improved green phosphor 32 having a peak wavelength of 510 nm to 540 nm is employed, thereby significantly improving the color reproduction rate.

The green phosphor 32. In a further embodiment, BaMgAl ₁₀ O _17: Eu ^{2 +,} or BaMgAl ₁₀ O _17: Mn ^{4 +} may be a not so limited.

In a further embodiment, a light emitting chip (not shown) having a green peak emission wavelength having an emission wavelength of 510 nm to 540 nm may be employed. According to this additional embodiment, by employing the red phosphor 31 having a peak wavelength of 650 nm to 670 nm and the green phosphor 32 having a peak wavelength of 510 nm to 540 nm having the maximum intensity according to the embodiment, For example, to 109.5%.

(Second Embodiment)

9 is a sectional view of the package 102 of the light emitting device according to the second embodiment.

The second embodiment can employ the technical features of the first embodiment, and the following description will focus on the main features of the second embodiment.

9, the package 102 of the light emitting device according to the embodiment may include a plurality of molding members 42 and 43 in the cavity 15 of the body 11. Phosphors 31 and 32 may be disposed on any one of the molding members 42 and 43. The plurality of molding members 42 and 43 may include first and second molding members 42 and 43 and the phosphors 31 and 32 may be disposed on the second molding member 43.

The ratio of the thickness of the first and second molding members 42 and 43 may be in the range of 2: 1 to 1: 3. When the thickness ratio of the second molding member 43 is less than the above range, And the thickness of the light emitting element 10 may become thick when the thickness of the light emitting element 10 is larger than the above range.

The phosphors 31 and 32 may be spaced apart from the light emitting chip 25. The bottom surface of the second molding member 43 may have an interval of 0.2 mm or more from the light emitting chip 25, and if the interval is narrower than 0.2 mm, deterioration of the phosphor may occur. A phosphor may not be added to the first molding member 42 contacting the light emitting chip 25. The first and second phosphors 31 and 32 may be added to the second molding member 43 disposed on the first molding member 42. Accordingly, damage to the first and second phosphors 31 and 32 due to heat generated from the light emitting chip 25 can be reduced.

The first molding member 42 and the second molding member 43 may include the same resin material such as silicone or epoxy. The features of the first and second phosphors 31 and 32 can adopt the technical features of the first embodiment. The light emitting device according to the embodiment can provide a color reproduction ratio equal to that of the case of using a red / green / blue chip with a high color reproducibility and especially providing a darker and brighter green and red color than a configuration using a yellow phosphor can do.

The light emitting device according to the embodiment can be applied to a backlight unit, a lighting unit, a display device, a mobile phone, a pointing device, a lamp, a streetlight, a vehicle lighting device, a vehicle display device, a smart watch, a medical device, and the like.

10 is a perspective view of a lighting apparatus according to an embodiment.

The lighting apparatus according to the embodiment may include a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, and a socket 2800. Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device or a light emitting device package according to the embodiment.

The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250. The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670. The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

The package body 11, the blue light emitting element 25,
The molding member 41, the first phosphor 31, the second phosphor 32,

Claims (10)

A _a B _b C _c D _d : RE _e As the red phosphor composition,
Provided that A comprises at least one or more divalent elements of Mg, Ca, Sr, and Ba,
B includes at least one or more of Sc, Y, B, Al, Ga, and In materials of at least one and / or trivalent elements of Ge, Si, Sn, and C,
C contains at least one of O, S, and N,
D includes at least one of F, Cl, Br, I, and Mn,
RE is at least one element selected from the group consisting of Mn or rare earth elements La, Ce, Pr, Sm, Eu, Gd, Tb, Dy, Er, Tm, Yb and Lu.
The method according to claim 1,
The range of the excitation wavelength of the phosphor composition is from 350 nm to 500 nm,
Wherein the range of the emission wavelength of the phosphor composition is from 650 nm to 720 nm.
3. The method of claim 2,
The composition of the phosphor composition is (Sr, Mg) _a (Ge, Sc) _b O _c F _d : Mn ^{4 +} _e ,
Wherein 0 &lt; a? 10, 0 &lt; b? 5, 1 <c? 10, 0 <d? 5, 0 <e? 0.3.
The method of claim 3,
The composition of the phosphor composition is (Sr, Mg) ₄ (Ge, Sc) O ₃ F ₂ : Mn ^{4 +} .
3. The method of claim 2,
The composition of the phosphor composition is (Sr, Mg) _a (Ge, Ga) _b O _c F _d : Mn ^{4 +} _e ,
Wherein 0 &lt; a? 10, 0 &lt; b? 5, 1 <c? 10, 0 <d? 5, 0 <e? 0.3.
6. The method of claim 5,
The composition of the phosphor composition is (Sr, Mg) ₄ (Ge, Ga) O ₃ F ₂ : Mn ^{4 +} .
3. The method of claim 2,
And Mn ^{4 +} _e,: the composition of the phosphor composition comprises _{(Sr, Mg) a (Ge} , Ga, Sc) b O c F d
Wherein 0 &lt; a? 10, 0 &lt; b? 5, 1 <c? 10, 0 <d? 5, 0 <e? 0.3.
8. The method of claim 7,
The composition of the phosphor composition comprises _{(Sr, Mg) 4 (Ge} , Ga, Sc) O 3 F 2: Mn 4 + phosphor composition.
A package body;
A light emitting element disposed on the package body;
A molding member disposed on the light emitting element;
And a phosphor composition disposed in the molding member,
The above-
A light emitting device package comprising the phosphor composition of any one of claims 1 to 8.
A lighting device comprising the light emitting device package of claim 9.

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