KR102551087B1 - 멀티 빔용의 블랭킹 장치 및 멀티 하전 입자 빔 묘화 장치 - Google Patents

멀티 빔용의 블랭킹 장치 및 멀티 하전 입자 빔 묘화 장치 Download PDF

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KR102551087B1
KR102551087B1 KR1020210028139A KR20210028139A KR102551087B1 KR 102551087 B1 KR102551087 B1 KR 102551087B1 KR 1020210028139 A KR1020210028139 A KR 1020210028139A KR 20210028139 A KR20210028139 A KR 20210028139A KR 102551087 B1 KR102551087 B1 KR 102551087B1
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South Korea
Prior art keywords
insulating film
blanking device
blanking
ground
film
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KR1020210028139A
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Korean (ko)
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KR20210117159A (ko
Inventor
히로시 야마시타
요시쿠니 고시마
히로후미 모리타
히로시 마츠모토
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가부시키가이샤 뉴플레어 테크놀로지
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2061—Electron scattering (proximity) correction or prevention methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0213—Avoiding deleterious effects due to interactions between particles and tube elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H01J2237/0437—Semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
KR1020210028139A 2020-03-18 2021-03-03 멀티 빔용의 블랭킹 장치 및 멀티 하전 입자 빔 묘화 장치 Active KR102551087B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020047967A JP7359050B2 (ja) 2020-03-18 2020-03-18 マルチビーム用のブランキング装置及びマルチ荷電粒子ビーム描画装置
JPJP-P-2020-047967 2020-03-18

Publications (2)

Publication Number Publication Date
KR20210117159A KR20210117159A (ko) 2021-09-28
KR102551087B1 true KR102551087B1 (ko) 2023-07-04

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KR1020210028139A Active KR102551087B1 (ko) 2020-03-18 2021-03-03 멀티 빔용의 블랭킹 장치 및 멀티 하전 입자 빔 묘화 장치

Country Status (5)

Country Link
US (1) US11355302B2 (cg-RX-API-DMAC10.html)
JP (1) JP7359050B2 (cg-RX-API-DMAC10.html)
KR (1) KR102551087B1 (cg-RX-API-DMAC10.html)
CN (1) CN113495434B (cg-RX-API-DMAC10.html)
TW (1) TWI775308B (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024135231A (ja) * 2023-03-22 2024-10-04 株式会社東芝 接合型配線部材

Citations (4)

* Cited by examiner, † Cited by third party
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US20100288938A1 (en) * 2009-05-14 2010-11-18 Ims Nanofabrication Ag Multi-beam deflector array means with bonded electrodes
US20110266418A1 (en) * 2009-10-26 2011-11-03 Mapper Lithography Ip B.V. Charged particle multi-beamlet lithography system, modulation device , and method of manufacturing thereof
JP2015023286A (ja) * 2013-07-17 2015-02-02 アイエムエス ナノファブリケーション アーゲー 複数のブランキングアレイを有するパターン画定装置
US20160099129A1 (en) * 2014-10-03 2016-04-07 Nuflare Technology, Inc. Blanking aperture array and charged particle beam writing apparatus

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Publication number Priority date Publication date Assignee Title
JP3145149B2 (ja) 1991-10-17 2001-03-12 富士通株式会社 荷電粒子ビーム偏向装置
JP2000114147A (ja) 1998-10-05 2000-04-21 Advantest Corp 荷電粒子ビーム露光装置
JP2001109018A (ja) 1999-10-12 2001-04-20 Matsushita Electric Ind Co Ltd 液晶表示装置およびその駆動方法
EP2579268A1 (en) * 2003-09-05 2013-04-10 Carl Zeiss SMT GmbH Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
JP4387755B2 (ja) * 2003-10-14 2009-12-24 キヤノン株式会社 偏向器アレイおよびその製造方法、ならびに該偏向器アレイを用いた荷電粒子線露光装置
JP2005142101A (ja) * 2003-11-10 2005-06-02 Canon Inc 電極基板の製造方法、該電極基板を用いた偏向器、ならびに該偏向器を用いた荷電粒子線露光装置
JP2006332256A (ja) * 2005-05-25 2006-12-07 Canon Inc 配線基板の製造方法
DE102008010123B4 (de) * 2007-02-28 2024-11-28 Ims Nanofabrication Gmbh Vielstrahl-Ablenkarray-Einrichtung für maskenlose Teilchenstrahl-Bearbeitung
US8198601B2 (en) * 2009-01-28 2012-06-12 Ims Nanofabrication Ag Method for producing a multi-beam deflector array device having electrodes
TWI550679B (zh) * 2010-10-26 2016-09-21 瑪波微影Ｉｐ公司 調整裝置和使用其之帶電粒子多重小射束微影系統
NL2006868C2 (en) * 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
JP6553973B2 (ja) 2014-09-01 2019-07-31 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム用のブランキング装置及びマルチ荷電粒子ビーム描画装置
US9330881B2 (en) 2014-09-01 2016-05-03 Nuflare Technology, Inc. Blanking device for multi charged particle beams, and multi charged particle beam writing apparatus
JP5816739B1 (ja) 2014-12-02 2015-11-18 株式会社ニューフレアテクノロジー マルチビームのブランキングアパーチャアレイ装置、及びマルチビームのブランキングアパーチャアレイ装置の製造方法
JP6709109B2 (ja) 2016-05-31 2020-06-10 株式会社ニューフレアテクノロジー マルチ荷電粒子ビームのブランキング装置及びマルチ荷電粒子ビーム照射装置
US10593509B2 (en) * 2018-07-17 2020-03-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100288938A1 (en) * 2009-05-14 2010-11-18 Ims Nanofabrication Ag Multi-beam deflector array means with bonded electrodes
US20110266418A1 (en) * 2009-10-26 2011-11-03 Mapper Lithography Ip B.V. Charged particle multi-beamlet lithography system, modulation device , and method of manufacturing thereof
JP2015023286A (ja) * 2013-07-17 2015-02-02 アイエムエス ナノファブリケーション アーゲー 複数のブランキングアレイを有するパターン画定装置
US20160099129A1 (en) * 2014-10-03 2016-04-07 Nuflare Technology, Inc. Blanking aperture array and charged particle beam writing apparatus

Also Published As

Publication number Publication date
TW202201446A (zh) 2022-01-01
US20210296074A1 (en) 2021-09-23
CN113495434B (zh) 2024-08-27
JP2021150456A (ja) 2021-09-27
CN113495434A (zh) 2021-10-12
JP7359050B2 (ja) 2023-10-11
US11355302B2 (en) 2022-06-07
KR20210117159A (ko) 2021-09-28
TWI775308B (zh) 2022-08-21

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