KR102518408B1 - Filling composition for semiconductor package - Google Patents

Abstract

The present invention relates to a semiconductor package filling composition. The semiconductor package filling composition may include a resin; curing agent; and an insulating filler. The insulating filler may include a first filler body; a second filler body; a polymer chain coupled to the first filler body and the second filler body; and supramolecules bonded to the polymer chain.

Description

Semiconductor package filling composition {Filling composition for semiconductor package}

The present invention relates to a semiconductor package filling composition and the manufacture of a semiconductor package using the same.

In accordance with the recent trend of miniaturization and high functionality of electronic devices, high density semiconductor packages have been required. Accordingly, demands for highly integrated and miniaturized semiconductor packages are increasing. Epoxy molding compounding (EMC), diattached paste (DAP), diattached film (DAF), and/or an underfill composition may be used as a filling composition for a semiconductor package. In the semiconductor package manufacturing process, it is required that the filling composition has thixotropy. In addition, the need to prevent warping of the semiconductor package in the manufacturing process of the semiconductor package is increasing. Accordingly, interest in controlling the thermal expansion coefficient of the filling composition is increasing.

An object to be solved by the present invention is to provide a semiconductor package filling composition having improved thixotropic properties and a low coefficient of thermal expansion.

The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the following description.

A semiconductor filling composition according to the present invention is provided. According to the present invention, the semiconductor package filling composition is a resin; curing agent; and an insulating filler. The insulating filler may include a first filler body; a second filler body; a polymer chain coupled to the first filler body and the second filler body; and supramolecules bonded to the polymer chain.

According to embodiments, the filling composition may have a Thixotropic Index of 5 to 20 and a thermal expansion coefficient of 10 ppm/K to 40 ppm/K.

According to embodiments, the insulating filler may include: a first functional group bonded to a surface of the first filler body; And it may further include a second functional group bonded to the surface of the second filler body.

According to embodiments, the first functional group and the second functional group may include a silane-containing group, an epoxy group, a vinyl group, an acid group, a hydroxyl group, and/or a rubber-based functional group.

According to embodiments, flux may be further included.

According to embodiments, the first filler body part and the second filler body part may include inorganic materials.

According to embodiments, the first filler body part may include a thermoplastic resin, and the second filler body part may include a thermoplastic resin.

According to embodiments, the polymer chain may include a thermoplastic polymer, the curing agent may include an anhydride group, and the resin may include a thermosetting resin.

According to embodiments, any one of the first filler body and the second filler body may have a spherical shape, a plate shape, a rod shape, a star shape, and a dendrite shape.

According to embodiments of the present invention, the filling composition may include an insulating filler. The insulating filler may include functional groups or supramolecules. Accordingly, the filling composition may have improved thixotropic properties and a low coefficient of thermal expansion.

The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

1 schematically illustrates a semiconductor package filling composition.
2A schematically illustrates an insulating filler according to an exemplary embodiment.
2B schematically shows an insulating filler according to another embodiment.
3A schematically shows an insulating filler at a first temperature.
3B schematically shows an insulating filler at a second temperature.
4A is a diagram schematically illustrating a packaging material according to an exemplary embodiment.
4B is a diagram schematically illustrating a packaging material according to another embodiment.
5A and 5B are diagrams illustrating a manufacturing process of a semiconductor package according to example embodiments.
6 is a cross-sectional view illustrating a semiconductor package according to other embodiments.

Advantages and features of the present invention, and methods of achieving them, will become clear with reference to the detailed description of the following embodiments taken in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and only these embodiments make the disclosure of the present invention complete, and common knowledge in the art to which the present invention belongs. It is provided to completely inform the person who has the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numbers designate like elements throughout the specification.

Embodiments described in this specification will be described with reference to cross-sectional views and/or plan views, which are ideal exemplary views of the present invention. In the drawings, the thicknesses of films and regions are exaggerated for effective explanation of technical content. Accordingly, the regions illustrated in the drawings have schematic properties, and the shapes of the regions illustrated in the drawings are intended to illustrate a specific shape of a region of a device and are not intended to limit the scope of the invention. Although terms such as first, second, and third are used to describe various elements in various embodiments of the present specification, these elements should not be limited by these terms. These terms are only used to distinguish one component from another. Embodiments described and illustrated herein also include complementary embodiments thereof.

Terminology used herein is for describing the embodiments and is not intended to limit the present invention. In this specification, singular forms also include plural forms unless specifically stated otherwise in a phrase. As used herein, “comprises” and/or “comprising” means the presence of one or more other components, steps, operations, and/or elements in the stated component, step, operation, and/or element. or do not rule out additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in this specification may be used in a meaning commonly understood by those of ordinary skill in the art to which the present invention belongs. In addition, terms defined in commonly used dictionaries are not interpreted ideally or excessively unless explicitly specifically defined.

In this specification, like reference numerals may refer to like elements throughout.

Hereinafter, a filling composition according to the concept of the present invention and a semiconductor package manufactured using the same will be described with reference to the drawings.

1 schematically illustrates a semiconductor package filling composition. 2A schematically illustrates an insulating filler according to an exemplary embodiment. 2B schematically shows an insulating filler according to another embodiment.

Referring to FIG. 1 , a filling composition 3000 may include resins 3100, an insulating filler 3500, and a curing agent 3200. The filling composition 3000 may be a semiconductor package filling composition. For example, the filling composition 3000 may be transparent. Resins 3100 may be synthesized using monomers having molecular weights of 50 to 1000 g/mol. The resins 3100 may be thermosetting resins. Resins 3100 include epoxy resin, phenoxy resin, bismaleimide resin, unsaturated polyester, urethane-based resin, urea-based resin, and phenol. -Resin synthesized from phenol-formaldehyde-based monomers, vulcanized rubber, melamine resin and polyimide, epoxy novolac resin, and/or cyanate It may include resins synthesized from ester (cyanate ester) monomers. As another example, the resins 3100 may include photocurable resins.

A curing agent 3200 may be dispersed in the filling composition 3000 . The curing agent 3200 may be a thermal curing agent. there is. The curing agent 3200 may include an anhydride group. For example, the curing agent 3200 may include nadic maleic anhydride, dodecyl succinnic anhydride, maleic anhydride, succinic anhydride, metyl tetrahydro phthalic anhydride, hexahydro phthalic anhydride, hexahydro phthalic anhydride, tetrahydro phthalic anhydride, pyromellitic dianhydride, tetrahydro phthalic anhydride, cyclohexanedicarboxylic anhydride, methyl tetrahydro phthalic anhydride, 1,2,4-benzenetricarboxylic anhydride, benzopen one-3,3', and/or 4,4'-tetracarboxylic dianhydride. As another example, the curing agent 3200 may be a photocuring agent. The curing agent 3200 may be 1wt% to 70wt% of the filling composition 3000 . The equivalent ratio of the resins 3100 to the curing agent 3200 may be 1:0.1 to 1:5.

The filling composition 3000 may further include a flux 3300. Flux 3300 can function as an antioxidant. The flux 3300 is formic acid, acetic acid, lactic acid, glutamic acid, oleic acid, rosolic acid, 2,2-bis(hydroxymethylene)propanoic acid, butanoic acid, propanoic acid, tannic acid, gluconic acid, pentanoic acid, hexanoic acid acid, hydrobromic acid, hydrochloric acid, uric acid, hydrofluoric acid, sulfuric acid, hydrochloric acid, benzglutaric acid, malic acid, phosphoric acid, oxalic acid, uranic acid, hydrochlorate, perchloric acid, gallic acid, phosphorous acid, citric acid, malonic acid, tartartic acid, phthalic acid, cinnamic acid, glutaric acid, hexanoic acid, propionic acid, stearic acid, ascorbic acid, acetylsalicylic acid, azelaic acid, benzilic acid, and/or fumaric acid. The flux 3300 may be 0.001 to 50 parts per hundred rubber (phr) of the resins 3100 .

The insulating filler 3500 may be dispersed in the resins 3100 . The insulating filler 3500 may be 1wt% to 90wt% of the filling composition 3000 . Hereinafter, the insulating filler 3500 will be described in detail with reference to FIGS. 2A and 2B.

Referring to FIGS. 1 and 2A , an insulating filler 3500 may include a filler body 3510 and a functional group 3520 . The filler body 3510 may have a spherical shape, a plate shape, a rod shape, a star shape, and a dendrite shape. The shape of the filler body portion 3510 may be variously modified. The filler body 3510 may include inorganic or organic materials. The inorganic material may include Si, Sn, Ag, Cu, In, Bi, Ni, Ma, Ba, Mn, Pd, and/or Ti. As another example, inorganic materials include silica, Ba ₂ SO ₄ , alumina, clay, kaolin, talc, manganese dioxide, zinc oxide, CaCO ₃ , TiO ₂ , mica, wollastonite, basalt, clay, kaolin, talc, manganese oxide, zinc oxide, It may be at least one of titanium oxide, mica, wollastonite, granite and basalt. The organic material may include a thermoplastic resin. When the insulating filler 3500 includes a thermoplastic resin, the thermoplastic resin may be 20 wt% to 70 wt% of the filling composition (3000 in FIG. 1 ). The thermoplastic resin may be substituted with a hydroxyl group. The number of repeating units of the thermoplastic resin may be 10 to 100,000. As another example, the thermoplastic resin is polystyrene, polymethamethylacrylate, polyethylene terephthalate, polyisobutyl methacrylate, polyvinyl pyridine, polycaprolactone (polycaprolactone), polybutadiene, polydimethylsiloxane, polyisobutylene, polyisoprene, polycarbonate, polypropylene, polyethylene ) and/or polyvinyl chloride. As another example, the organic material may include polyethylenoxide, polyvinyl alcohol, phenoxy resin, polyacrylic acid, and/or polyethyl acrylic acid. . As another example, the organic material may include a highly heat-resistant polymer. The high heat resistance polymer may have a glass transition temperature (Tg) of 180 °C or higher or a melting temperature of 300 °C or higher.

A functional group 3520 may be provided on the surface of the filler body portion 3510 . The functional group 3520 may be combined with the filler body 3510 . The functional group 3520 may be a silane-containing group, an epoxy group, a vinyl group, an acid group, a hydroxyl group, and/or a rubber-based functional group 3520. The functional group 3520 may be a hydrophobic functional group or a hydrophilic functional group. For example, the functional group 3520 is represented by Chemical Formula 1 and may include an epoxy group. The functional group 3520 represented by Chemical Formula 1 may be hydrophilic. As another example, the functional group 3520 is represented by Chemical Formula 2 and may include a vinyl group. The functional group 3520 represented by Chemical Formula 2 may be hydrophobic.

[Formula 1]

[Formula 2]

(In Chemical Formulas 1 and 2, * may mean a portion coupled to the filler body 3510.)

Depending on the properties of the resins (3100 in FIG. 1), functional groups 3520 may be determined. For example, when the resins 3100 form a hydrophilic polymer, the functional group 3520 may be hydrophilic. When the resins 3100 exhibit hydrophobicity, the functional group 3520 may be hydrophobic. As the functional group 3520 is provided, compatibility between the insulating filler 3500 and the resins 3100 may be improved. Accordingly, thixotropy of the filling composition 3000 may be improved.

Referring to FIG. 2B , an insulating filler 3500 includes filler body portions 3510A and 3510B, first and second functional groups 3520A and 3520B, a polymer chain 3530, and supramolecular molecules 3550. can include The filler body portions 3510A and 3510B may include a first filler body portion 3510A and a second filler body portion 3510B adjacent to each other. Each of the filler body portions 3510A and 3510B may include the same material as described for the filler body portion 3510 of FIG. 2A . Each of the filler body portions 3510A and 3510B may have a spherical shape, a plate shape, a rod shape, a star shape, and a dendrite shape.

A first functional group 3520A may be provided on the first filler body portion 3510A. The first functional group 3520A may be coupled to the first filler body 3510A. A second functional group 3520B may be provided on the second filler body portion 3510B. The second functional group 3520B may be coupled to the second filler body 3510B. Each of the first functional group 3520A and the second functional group 3520B may include substantially the same group as described in the example of the functional group 3520 of FIG. 2B .

A polymer chain 3530 may be provided between the first and second filler body portions 3510A and 3510B and coupled to the first and second filler body portions 3510A and 3510B. For example, one end of the polymer chain 3530 may be coupled to the first filler body portion 3510A, and the other end of the polymer chain 3530 may be coupled to the second filler body portion 3510B. The first and second pillar body parts 3510A and 3510B may be connected to each other by a polymer chain 3530 . Polymer chain 3530 may include a thermoplastic polymer. For example, the polymer chain 3530 may include polyethylene oxide, polyvinyl alcohol, phenoxy resin, polyacrylic acid, polyethyl acrylic acid, polystyrene ( polystyrene, polymethamethylacrylate, polyethylene terephthalate, polyisobutyl methacrylate, polyvinyl pyridine, polycaprolactone, polybutadiene ), polydimethylsiloxane, polyisobutylene, polyisoprene, polycarbonate, polypropylene, polyethylene and/or polyvinyl chloride ( polyvinyl chloride). The number of repeating units of the polymer chain 3530 may be 10 to 100,000. As another example, the polymer chain 3530 may include a block copolymer.

Supramoleculars 350 may be coupled to polymer chain 3530 . Supramolecules 3550 may be self-assembled structures, intramolecular self-assembly structures, host-guest complex structures, and/or mechanically interlocked molecules. interlocked molecules) structure. The supramolecules 3550 may have a weight average molecular weight of about 30 to 10,000. The supramolecules 3550 may have a functional group such as a hydroxyl group, an acid group, an amine group, or an amide group. For example, supramolecules 3550 may include at least one of cucurbit[10]uril, rotaxane, p-xylyene diammonium, cucurbituril, and/or UPy (2-ureido-4[1H]-pyrimidinone. Temperature Depending on conditions, the strength of intermolecular interactions between the supramolecules 3550 may vary.

3A schematically shows an insulating filler at a first temperature. 3B schematically shows an insulating filler at a second temperature. Hereinafter, contents overlapping with those described above will be omitted.

Referring to FIG. 3A , an insulating filler 3500 may be provided under a first temperature condition. The insulating filler 3500 may be the same as the insulating filler 3500 described above with reference to FIG. 2B. For example, the insulating filler 3500 may include first and second filler body portions 3510A and 3510B, functional groups 3520A and 3520B, a polymer chain 3530, and supramolecules 3550. The first temperature may be a temperature lower than the curing temperature of the filling composition 3000 of FIG. 1 or the manufacturing process temperature of the semiconductor package. For example, the first temperature may be room temperature (eg, 25°C). Each of the filler body portions 3510A and 3510B may have a first diameter A1. The second filler body portion 3510B may be spaced apart from the first filler body portion 3510A by a first minimum distance Dmin1 and a first maximum distance Dmax1. The first maximum distance Dmax1 is the sum of the first minimum distance Dmin1, the first diameter A1 of the first filler body part 3510A, and the first diameter A1 of the second pillar body part 3510B. may be substantially the same as

Referring to FIG. 3B , the insulating filler 3500 may be heated and provided to a second temperature condition. The second temperature may be higher than the first temperature. In the second temperature condition, a second minimum distance Dmin2 may be provided between the first and second filler body portions 3510A and 3510B. The first and second filler body parts 3510A and 3510B may be spaced apart from each other by a second maximum distance Dmax2. The second temperature may be a curing temperature of the filling composition 3000 or a manufacturing process temperature of the semiconductor package. For example, the second temperature may be 40°C or higher.

When the temperature increases (200b), the first and second filler body parts 3510A and 3510B may expand. Each of the first and second filler body portions 3510A and 3510B may have a second diameter A2 under the second temperature condition. The second diameter A2 may be larger than the first diameter A1. In the second temperature condition, intermolecular interactions (eg, hydrogen bonding) between the supramolecules 3550 may be provided as shown by dotted lines. A minimum distance between the first and second filler body parts 3510A and 3510B may decrease due to the intermolecular interaction of the supramolecules 3550 . Accordingly, the second minimum distance Dmin2 may be smaller than the first minimum distance Dmin1. The second maximum distance Dmax2 is the sum of the second minimum distance Dmin2, the second diameter A2 of the first filler body parts 3510A, and the second diameter A2 of the second pillar body parts 3510B. can be the same as Due to the increase in the second diameter A2 and the decrease in the second minimum distance Dmin2, the second maximum distance Dmax2 may be the same as or similar to the first maximum distance Dmax1.

Referring back to FIG. 3A , the insulating filler 3500 may be cooled and provided at a first temperature condition. As the temperature decreases, the first and second filler body portions 3510A and 3510B may contract. Accordingly, each of the first and second filler body portions 3510A and 3510B may again have a first diameter A1. Under the first temperature condition, intermolecular interactions between the supramolecules 3550 may be removed/reduced. Accordingly, a minimum distance between the first and second pillar body portions 3510A and 3510B may be increased. The first and second pillar body parts 3510A and 3510B may be spaced apart again by the first minimum distance Dmin1. A decrease in the diameter of the filler body portions 3510A and 3510B may be offset by an increase in the minimum distance between the filler body portions 3510 . According to embodiments, the insulating filler 3500 may have a low coefficient of thermal expansion.

Referring back to FIG. 1 , the filling composition 3000 may include the insulating filler 3500 of FIG. 2A. Alternatively, the filling composition 3000 may include the insulating filler 3500 of FIG. 2B. The filling composition 3000 may include the insulating filler 3500 and may have a low coefficient of thermal expansion. For example, the filling composition 3000 may have a thermal expansion coefficient of 10 ppm/K to 40 ppm/K. The filling composition 3000 may include the insulating filler 3500 and may have high thixotropic properties. Thixotropy may mean that the viscosity decreases when an external force is applied to a material, and the viscosity reversibly increases/recovers when the external force is removed. For example, the filling composition 3000 may have a Thixotropic Index of 5 to 20. The thixotropic index may be defined as the ratio of the viscosity under a first external force condition to the viscosity under a second external force condition of a material. The second external force may be greater than the first external force. For example, the thixotropic index can be evaluated as the viscosity of the fill composition 3000 at 3 rpm relative to the viscosity of the fill composition 3000 at 30 rpm.

4A is a diagram schematically illustrating a packaging material according to an exemplary embodiment. Hereinafter, contents overlapping with those described above will be omitted.

Referring to FIGS. 1 and 4A , a packaging material may include a polymer matrix 3001 . The packaging material may be prepared by curing the fill composition 3000. Curing of the filling composition 3000 may mean curing of the resins 3100 . The filling composition 3000 may be cured by thermal curing or photo curing. Thermal curing may be performed at 100 °C to 300 °C. Thermal curing can be performed using a reflow oven or a laser. The laser may have an infrared wavelength, but is not limited thereto. During the curing process, a crosslinking reaction between the resins 3100 and the curing agent 3200 may proceed, thereby forming a polymer matrix 3001 . The insulating filler 3500 does not participate in a crosslinking reaction and can be dispersed in the polymer matrix 3001 . The insulating filler 3500 may be bonded to the polymer matrix 3001 through a functional group (3520 in FIG. 2A, 3520A or 3520B in FIG. 2B). The insulating filler 3500 may be the same as that described in FIG. 2A or 2B. Flux 3300 may be removed. The packaging material may have insulating properties.

4B is a diagram schematically illustrating a packaging material according to another embodiment. Hereinafter, contents overlapping with those described above will be omitted.

Referring to FIGS. 1 and 4B , a packaging material may be manufactured by curing the filling composition 3000 . In an embodiment, a packaging material may include a polymer matrix 3001'. Curing of the filling composition 3000 may be performed by the same method as described with reference to FIG. 4A. When the insulating filler 3500 includes an organic material, the insulating filler 3500 may participate in forming the cross-link. Accordingly, the polymer matrix 3001' may be formed by crosslinking the resins 3100, the insulating filler 3500, and the curing agent 3200. Flux 3300 may be removed. The packaging material may have insulating properties.

5A and 5B are diagrams illustrating a manufacturing process of a semiconductor package according to example embodiments. Hereinafter, contents overlapping with those described above will be omitted.

Referring to FIGS. 1 and 5A , a semiconductor chip 200 may be mounted on a substrate 100 . For example, a printed circuit board (PCB) may be used as the substrate 100 . An external terminal 400 may be provided on the lower surface 200b of the substrate 100 . The external terminal 400 may be electrically connected to an external device (not shown). The external terminal 400 may have a solder ball shape and include metal. A substrate pad 110 may be provided on the upper surface of the substrate 100 . The substrate pad 110 may include metal. The substrate pad 110 may be electrically connected to the external terminal 400 through wires. In the drawings below, dotted lines in the substrate 100 schematically represent wiring.

The semiconductor chip 200 may be mounted on the substrate 100 in a flip chip manner. For example, the chip pad 210 may be disposed on the lower surface 200b of the semiconductor chip 200 . The connection terminal 500 may include at least one of solder, bump, and filler. The connection terminal 500 may be interposed between the substrate pad 110 and the chip pad 210 . The semiconductor chip 200 may be electrically connected to the substrate 100 through the connection terminal 500 . The connection terminal 500 may include a conductive material such as silver, tin, bismuth, and/or copper. An oxide film (not shown) may be formed on the sidewall of the connection terminal 500 . The oxide film may be formed by natural oxidation of the connection terminal 500 .

The filling composition 3000 may fill the gap between the substrate 100 and the semiconductor chip 200 . At this time, the filling composition 3000 described in FIG. 1 may be used. The filling composition 3000 may have thixotropic properties. In the process of injecting or applying the filling composition 3000 between the gaps, an external force may be applied to the filling composition 3000 . Since the filling composition 3000 has thixotropy, viscosity may decrease when an external force is applied. Accordingly, the filling composition 3000 can easily fill the gap between the substrate 100 and the semiconductor chip 200 . When application of the filling composition 3000 is completed, an external force applied to the filling composition 3000 may be removed or reduced. In this case, since the viscosity of the filling composition 3000 increases, the filling composition 3000 may be difficult to flow. The filling composition 3000 may maintain a state of filling the gap. The filling composition 3000 may surround sidewalls of the connection terminals 500 . The filling composition 3000 may further include a flux 3300 to remove the oxide film. The flux 3300 may be removed by reacting with the oxide film. Accordingly, reliability of the semiconductor package may be improved.

Referring to FIGS. 1 and 5B , the filling composition 3000 may be cured to form an underfill film 300 . The underfill film 300 may fill a gap between the substrate 100 and the semiconductor chip 200 and seal the connection terminal 500 . According to embodiments, since the filling composition 3000 maintains a state of filling the gap, the underfill layer 300 can be easily formed. For example, curing of the filling composition 3000 may be performed by the method previously described in the preparation of the packaging material of FIG. 4A. The underfill layer 300 may include a polymer matrix 3001 and an insulating filler 3500 as shown in FIG. 5A. As another example, the underfill layer 300 may include a polymer matrix 3001' as shown in FIG. 5B. The flux 3300 in the filling composition 3000 may be removed by reaction with the oxide layer described in FIG. 5A. The flux 3300 may not remain in the underfill layer 300 .

Since the filling composition 3000 has a low coefficient of thermal expansion, dimensional stability may be improved in a manufacturing process of a semiconductor package. For example, warpage of the substrate 100 or the semiconductor chip 200 may be prevented in a manufacturing process of a semiconductor package. The manufacturing process of the semiconductor package may include a curing process of the filling composition 3000 .

A molding layer 310 may be formed on the substrate 100 to cover the semiconductor chip 200 . The molding layer 310 may include an insulating material. For example, the molding layer 310 may include an insulating polymer such as an epoxy-based molding compound. As another example, the molding layer 310 may be manufactured using the filling composition 3000 described in FIG. 1 . For example, the filling composition 3000 of FIG. 1 may be coated on the substrate 100 and the semiconductor chip 200 to form a pre-molding film (not shown). The pre-molding layer may be cured to form a molding layer 310 . Curing of the premolding film may be performed by photocuring or thermal curing. Since the filling composition 3000 has thixotropy, the molding layer 310 can be easily formed. Since the filling composition 3000 has a low coefficient of thermal expansion, warping of the substrate 100 or the semiconductor chip 200 may be prevented during the forming process of the molding film 310 . The molding layer 310 may include a packaging material as shown in FIG. 4A or 4B. Manufacturing of the semiconductor package may be completed by the manufacturing examples described above.

6 is a cross-sectional view illustrating a semiconductor package according to other embodiments. Hereinafter, contents overlapping with those described above will be omitted.

Referring to FIG. 6 , a semiconductor package may include a substrate 100 , a semiconductor chip 200 , an adhesive film 320 , and a molding film 310 . The substrate 100 and the semiconductor chip 200 may be substantially the same as those previously described with reference to FIGS. 5A and 5B. However, the chip pad 210 may be provided on the upper surface 200a of the semiconductor chip 200 . A lower surface 200b of the semiconductor chip 200 may face the substrate 100 . A bonding wire 510 may be provided on the upper surface 200a of the semiconductor chip 200 . The bonding wire 510 may be connected to the chip pad 210 and the substrate pad 110 . The semiconductor chip 200 may be electrically connected to the substrate 100 through a bonding wire 510 .

An adhesive film 320 may be interposed between the substrate 100 and the semiconductor chip 200 . The semiconductor chip 200 may be fixed to the substrate 100 by an adhesive film 320 . The adhesive film 320 may be manufactured using the filling composition 3000 of FIG. 1 . Since the filling composition 3000 has thixotropy, the adhesive film 320 can be easily manufactured. Since the filling composition 3000 has a low coefficient of thermal expansion, warping of the substrate 100 and the semiconductor chip 200 may be prevented during the formation of the adhesive film 320 . The adhesive film 320 may include a packaging material as shown in FIG. 4a or 4b. The adhesive film 320 may have insulating properties.

A molding layer 310 may be formed on the substrate 100 to cover the semiconductor chip 200 and the bonding wire 510 . The molding layer 310 may include an insulating polymer such as an epoxy-based molding compound. As another example, the molding layer 310 may be manufactured using the filling composition 3000 described in FIG. 1 .

Hereinafter, preparation of the filling composition according to the experimental examples of the present invention will be described.

[Experimental Example 1]

Silica synthesized in the shape of a dendrite with a size of 10 nm - 5 mm is prepared as an insulating filler. The insulating filler may be added in an amount of 1wt% to 90wt%. Mix maleimide (resins) and succinic anhydride (heat curing agent) in a stoichiometric ratio of 1:0.1-1:5.0 at room temperature (25°C). Flux is added to the mixture so that it becomes 0.001 to 50 phr of maleimide. A filling composition is prepared by adding an insulating filler to the mixture. At this time, the content ratio of the insulating filler is 1wt% to 90wt%.

The curing process is performed using a reflow oven.

[Experimental Example 2]

Plate-shaped BaSO ₄ having a diameter of 100 nm - 5 mm and a thickness of 10 nm - 0.1 mm is prepared as a filler body. An insulating filler is prepared by substituting an epoxy functional group on the surface of the filler body. Mix epoxy resin and maleic anhydride at a stoichiometric ratio of 1:0.1-1:5.0 at room temperature. 0.001 to 50 phr of flux is added to the mixture. A filling composition is prepared by adding an insulating filler to the mixture. At this time, the content ratio of the insulating filler is 1wt% to 90wt%.

An underfill film for a semiconductor package is manufactured using the filling composition. At this time, mounting of the semiconductor chip proceeds by flip chip bonding by thermal compression bonding.

[Experimental Example 3]

A rod-shaped polymer with a length of 100 nm - 10 mm and a diameter of 10 nm - 1 mm is prepared as an insulating filler. An insulating filler is prepared by substituting a vinyl-based functional group on the surface of the filler body. Mix phenolic resin and aldehyde at a stoichiometric ratio of 1:0.1-1:5.0 at room temperature. 0.001 to 50 phr of flux is added to the mixture. A filling composition is prepared by adding an insulating filler to the mixture. At this time, the content ratio of the insulating filler is 1wt% to 90wt%.

The hardening process is carried out using a laser.

[Experimental Example 4]

A spherical polymer having a diameter of 10 nm to 10 mm is prepared as filler body parts. A nano-sized polymer chain substituted with supramolecules is prepared. An insulating filler is prepared by coupling the polymer chain to the filler body portions. After mixing bisphenol F-based epoxy polymer and phthalic anhydrie at a stoichiometric ratio of 1:0.1-1:5.0 at room temperature, 0.0001 to 50 phr of flux is added. A filling composition is prepared by adding an insulating filler to the mixture. At this time, the content ratio of the insulating filler is 1wt% to 90wt%.

The hardening process is carried out using a laser.

Although the preferred embodiments of the present invention have been shown and described above, the present invention is not limited to the specific embodiments described above, and in the technical field to which the present invention belongs without departing from the gist of the present invention claimed in the claims. Various modifications and implementations are possible by those skilled in the art, and these modifications should not be individually understood from the technical spirit or perspective of the present invention.

Claims (9)

profit;
curing agent; and
As a composition containing an insulating filler,
The insulating filler is:
a first filler body;
a second filler body;
a polymer chain coupled to the first filler body and the second filler body; and
Including supramolecules bonded to the polymer chain,
The first filler body and the second filler body include inorganic materials,
The polymer chain comprises a thermoplastic polymer,
The curing agent contains an anhydride group,
The resin includes a thermosetting resin,
The supramolecules are self-assembled structures, intramolecular self-assembly structures, host-guest complex structures, and mechanically interlocked molecules structures. have a structure,
The supramolecules have a weight average molecular weight of 30 to 10000,
The supramolecules include at least one selected from the group consisting of cucurbit[10]uril, rotaxane, p-xylyene diammonium, cucurbituril, and UPy (2-ureido-4[1H]-pyrimidinone),
The composition is:
Has a Thixotropic Index of 5 to 20,
A semiconductor package filling composition having a thermal expansion coefficient of 10 ppm / K to 40 ppm / K. delete According to claim 1,
The insulating filler is:
a first functional group bonded to a surface of the first filler body; and
The semiconductor package filling composition further comprises a second functional group bonded to a surface of the second filler body. According to claim 3,
The first functional group and the second functional group include a silane-containing group, an epoxy group, a vinyl group, an acid (acid), a hydroxyl group, and / or a rubber-based functional group. According to claim 1,
A semiconductor package filling composition further comprising a flux. delete delete delete According to claim 1,
Any one of the first filler body portion and the second filler body portion has a spherical shape, a plate shape, a rod shape, a star shape, and a dendrite (dendrite) shape.

Images