KR20190110003A - Filling composition for semiconductor package - Google Patents

Abstract

The present invention relates to a semiconductor package filling composition, which comprises: a resin; a curing agent; and an insulating filler, wherein the insulating filler comprises: a first filler body portion; a second filler body portion; a polymer chain coupled with the first filler body portion and the second filler body portion; and supramolecular molecules coupled to the polymer chain. In addition, the filling compositions have improved thixotropy and low coefficient of thermal expansion.

Description

Filling composition for semiconductor package

The present invention relates to the manufacture of semiconductor package filling compositions and semiconductor packages using the same.

In recent years, the trend of miniaturization and high functionality of electronic devices has been required to increase the density of semiconductor packages. Accordingly, there is an increasing demand for highly integrated and miniaturized semiconductor packages. Epoxy molding compounding (EMC), attached paste (DAP), attached film (DAF), and / or underfill compositions may be used as the fill composition for semiconductor packages. In semiconductor package manufacturing processes, it is desired that the filling composition be thixotropic. In addition, the necessity of preventing warpage of the semiconductor package in the manufacturing process of the semiconductor package is increasing. Accordingly, interest in controlling the coefficient of thermal expansion of the filling composition is increasing.

The problem to be solved by the present invention is to provide a semiconductor package filling composition having improved thixotropy and low thermal brittle coefficient.

The objects of the present invention are not limited to the above-mentioned objects, and other objects that are not mentioned will be clearly understood by those skilled in the art from the following description.

A semiconductor filling composition according to the present invention is provided. According to the present invention, a semiconductor package filling composition is a resin; Curing agent; And an insulating filler. The insulating filler may include a first filler body part; A second filler body portion; A polymer chain coupled with the first filler body portion and the second filler body portion; And supramolecular molecules bonded to the polymer chain.

According to embodiments, the filling composition may have a Thixotropic Index of 5 to 20, and may have a thermal expansion coefficient of 10 ppm / K to 40 ppm / K.

According to embodiments, the insulating filler comprises: a first functional group bonded to a surface of the first filler body portion; And a second functional group bonded to the surface of the second filler body portion.

According to embodiments, the first functional group and the second functional group may include a silane containing group, an epoxy group, a vinyl group, an acid (acid), a hydroxyl group, and / or a rubber-based functional group.

According to embodiments, the flux may further include.

According to embodiments, the first filler body portion and the second filler body portion may include inorganic materials.

In example embodiments, the first filler body part may include a thermoplastic resin, and the second filler body part may include a thermoplastic resin.

According to embodiments, the polymer chain may include a thermoplastic polymer, the curing agent may include an anhydride group, and the resin may include a thermosetting resin.

According to embodiments, any one of the first filler body portion and the second filler body portion may have a spherical shape, a plate shape, a rod shape, a star shape, and a dendrite shape.

According to embodiments of the present invention, the filling composition may include an insulating filler. The insulating filler may include a functional group or supramolecular. Accordingly, the fill composition can have improved thixotropy and low coefficient of thermal expansion.

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

1 schematically illustrates a semiconductor package filling composition.
2A schematically illustrates an insulating filler according to one embodiment.
2B schematically illustrates an insulating filler according to another embodiment.
3A schematically illustrates an insulating filler at a first temperature.
3B schematically shows an insulating filler at a second temperature.
4A is a view schematically illustrating a packaging material according to an embodiment.
4B schematically illustrates a packaging material according to another embodiment.
5A and 5B illustrate a manufacturing process of a semiconductor package according to example embodiments.
6 is a cross-sectional view illustrating a semiconductor package in accordance with other embodiments.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and only the embodiments make the disclosure of the present invention complete, and the general knowledge in the art to which the present invention belongs. It is provided to fully inform the person having the scope of the invention, which is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

Embodiments described herein will be described with reference to cross-sectional and / or plan views, which are ideal exemplary views of the present invention. In the drawings, the thicknesses of films and regions are exaggerated for effective explanation of technical content. Accordingly, the regions illustrated in the figures have schematic attributes, and the shape of the regions illustrated in the figures is intended to illustrate a particular form of region of the device and not to limit the scope of the invention. Although terms such as first, second, third, etc. are used to describe various components in various embodiments of the present specification, these components should not be limited by these terms. These terms are only used to distinguish one component from another. The embodiments described and illustrated herein also include complementary embodiments thereof.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In this specification, the singular also includes the plural unless specifically stated otherwise in the phrase. As used herein, “comprises” and / or “comprising” refers to the presence of one or more other components, steps, operations and / or elements in the mentioned components, steps, operations and / or elements. Or does not exclude additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used in a sense that can be commonly understood by those skilled in the art. In addition, the terms defined in the commonly used dictionaries are not ideally or excessively interpreted unless they are specifically defined clearly.

In this specification, like reference numerals may refer to like elements throughout.

Hereinafter, a filling composition and a semiconductor package manufactured using the same according to the inventive concept will be described with reference to the accompanying drawings.

1 schematically illustrates a semiconductor package filling composition. 2A schematically illustrates an insulating filler according to one embodiment. 2B schematically illustrates an insulating filler according to another embodiment.

Referring to FIG. 1, the filling composition 3000 may include resins 3100, an insulating filler 3500, and a curing agent 3200. The filling composition 3000 may be a semiconductor package filling composition. For example, the filling composition 3000 may be transparent. The resins 3100 may be synthesized using monomers having molecular weights of 50-1000 g / mol. The resins 3100 may be thermosetting resins. The resins 3100 may be an epoxy resin, a phenoxy resin, a bismaleimide resin, an unsaturated polyester, an urethane resin, a urea resin, or a phenol. Resins synthesized from phenol-formaldehyde monomers, vulcanized rubber, melamine resins and polyimide, epoxy novolac resins, and / or cyanates Resins synthesized from cyanate ester monomers. As another example, the resins 3100 may include photocurable resins.

Curing agent 3200 may be dispersed in the fill composition 3000. The curing agent 3200 may be a thermosetting agent. have. Curing agent 3200 may include an hydride group. For example, the hardener (3200) is nadic maleic anhydride, dodecyl succinnic anhydride, maleic anhydride, succinic anhydride, metyl tetrahydro phthalic anhydride, hexahydro phthalic anhydirde, hexahydro phthalic anhydride, tetrahydro phthalic anhydride, pyromellitic dianhydric dihydride, tetrahydroide, tetrahydroide methyl tetrahydro phthalic anhydride, 1,2,4-benzenetricarboxylic anhydride, benzopen one-3,3 ', and / or 4,4'-tetracarboxylic dianhydride. As another example, the curing agent 3200 may be a photocuring agent. The curing agent 3200 may be 1 wt% to 70 wt% of the filling composition 3000. The equivalent ratio of resins 3100 to hardener 3200 may be from 1: 0.1 to 1: 5.

Fill composition 3000 may further include flux 3300. Flux 3300 may function as an antioxidant. Flux (3300) contains formic acid, acetic acid, lactic acid, glutamic acid, oleic acid, rosolic acid, 2,2-bis (hydroxymethylene) propanoic acid, butanoic acid, propanoic acid, tannic acid, gluconic acid, pentanoic acid, hexanoic acid, hydrobromic acid, hydrochloric acid, uric acid, hydrofluoric acid, sulfuric acid, hydrochloric acid, benzglutaric acid, malic acid, phosphoric acid, oxalic acid, uranic acid, hydrochlorate, perchloric acid, gallic acid, phosphorous acid, citric acid, malonic organic acids such as acid, tartartic acid, phthalic acid, cinnamic acid, glutaric acid, hexanoic acid, propionic acid, stearic acid, ascorbic acid, acetylsalicylic acid, azelaic acid, benzilic acid, and / or fumaric acid. The flux 3300 may be 0.001 to 50 phr (parts per hundred rubber) of the resins 3100.

The insulating filler 3500 may be dispersed in the resins 3100. The insulating filler 3500 may be 1 wt% to 90 wt% of the filling composition 3000. Hereinafter, the insulating filler 3500 will be described in more detail with reference to FIGS. 2A and 2B.

1 and 2A, the insulating filler 3500 may include a filler body part 3510 and a functional group 3520. The filler body part 3510 may have a spherical shape, a plate shape, a rod shape, a star shape, and a dendrite shape. The shape of the filler body part 3510 may be variously modified. The filler body part 3510 may include an inorganic material or an organic material. The inorganic material may include Si, Sn, Ag, Cu, In, Bi, Ni, Ma, Ba, Mn, Pd, and / or Ti. As another example, the inorganic material is silica, Ba ₂ SO _4, alumina, clay, kaolin, talc, manganese dioxide, zinc oxide, CaCO _3, TiO _2, mica, wollastonite, basalt, clay, kaolin, talc, manganese oxide, zinc oxide, Titanium oxide, mica, wollastonite, granite and basalt. The organic material may include a thermoplastic resin. When the insulating filler 3500 includes a thermoplastic resin, the thermoplastic resin may be 20 wt% to 70 wt% of the filling composition (3000 in FIG. 1). The thermoplastic resin may be substituted with a hydroxyl group. The repeating unit of the thermoplastic resin may be 10 to 100,000. As another example, the thermoplastic resin may be polystyrene, polymethamethylacrylate, polyethylene terephthalate polyisobutyl methacrylate, polyvinyl pyridine, polycaprolactone (polycaprolactone), polybutadiene, polydimethylsiloxane, polyisobutylene, polyisoprene, polycarbonate, polypropylene, polypropylene, polyethylene ) And / or polyvinyl chloride. In another example, the organic material may include polyethyelenoxide, polyvinyl alcohol, phenoxy resin, polyacrylic acid, and / or polyacrylic acrylic acid. . As another example, the organic material may include a high heat resistant polymer. The high heat resistant polymer may have a glass transition temperature (Tg) of 180 ° C. or higher or a melting temperature of 300 ° C. or higher.

A functional group 3520 may be provided on the surface of the filler body portion 3510. The functional group 3520 may be coupled to the filler body portion 3510. The functional group 3520 may be a silane-containing group, an epoxy group, a vinyl group, an acid (acid), a hydroxyl group, and / or a rubber-based functional group 3520. The functional group 3520 may be a hydrophobic functional group or a hydrophilic functional group. For example, the functional group 3520 may be represented by Chemical Formula 1 and may include an epoxy group. The functional group 3520 represented by Formula 1 may be hydrophilic. As another example, the functional group 3520 may be represented by Formula 2 and may include a vinyl group. The functional group 3520 represented by Formula 2 may be hydrophobic.

[Formula 1]

[Formula 2]

(* In Formula 1 and Formula 2, * may mean a part bonded to the filler body part 3510.)

Depending on the properties of the resins (3100 in FIG. 1), the functional group 3520 can be determined. For example, when the resins 3100 form a hydrophilic polymer, the functional group 3520 may be hydrophilic. When the resins 3100 exhibit hydrophobicity, the functional group 3520 may be hydrophobic. As the functional group 3520 is provided, compatibility between the insulating filler 3500 and the resins 3100 may be improved. Accordingly, thixotropy of the filling composition 3000 may be improved.

Referring to FIG. 2B, the insulating filler 3500 may include filler body portions 3510A and 3510B, first and second functional groups 3520A and 3520B, a polymer chain 3530, and supramolecular 3550. It may include. The filler body parts 3510A and 3510B may include a first filler body part 3510A and a second filler body part 3510B adjacent to each other. Each of the filler body parts 3510A and 3510B may include the same material as described with the filler body part 3510 of FIG. 2A. Each of the filler body portions 3510A and 3510B may have a spherical shape, a plate shape, a rod shape, a star shape, and a dendrite shape.

First functional group 3520A may be provided on first pillar body portion 3510A. The first functional group 3520A may be coupled to the first pillar body portion 3510A. The second functional group 3520B may be provided on the second pillar body portion 3510B. The second functional group 3520B may be coupled to the second pillar body portion 3510B. Each of the first functional group 3520A and the second functional group 3520B may include substantially the same groups as described in the example of the functional group 3520 of FIG. 2B.

A polymer chain 3530 may be provided between the first and second filler body portions 3510A and 3510B to couple with the first and second filler body portions 3510A and 3510B. For example, one end of the polymer chain 3530 may be coupled to the first pillar body portion 3510A, and the other end of the polymer chain 3530 may be coupled to the second filler body portion 3510B. The first and second filler body portions 3510A and 3510B may be connected to each other by the polymer chain 3530. The polymer chain 3530 may comprise a thermoplastic polymer. For example, the polymer chain 3530 may be made of polyethyelenoxide, polyvinyl alcohol, phenoxy resin, polyacrylic acid, polyethyl acrylic acid, polystyrene ( polystyrene, polymethamethylacrylate, polyethylene terephthalate polyisobutyl methacrylate, polyvinyl piridine, polycaprolactone, polybutadiene ), Polydimethylsiloxane, polyisobutylene, polyisoprene, polycarbonate, polypropylene, polyethylene and / or polyvinyl chloride ( polyvinyl chloride). The repeating unit of the polymer chain 3530 may be 10 to 100,000. As another example, the polymer chain 3530 may include a block copolymer.

Supramoleculars 350 may be coupled to the polymer chain 3530. The supramolecular 3550 may have a self-assembly structure, an intramoecular self-assembly structure, a host-guest complex structure, and / or a mechanically engaged molecule. interlocked molecules) structure. The supramolecular 3550 may have a weight average molecular weight of approximately 30 to 10000, and the supramolecular 3550 may have functional groups such as a hydroxy group, an acid, an amine group, and an amide group. For example, supramolecular 3550 may include at least one of cucurbit [10] uril, rotaxane, p-xylyene diammonium, cucurbituril, and / or UPy (2-ureido-4 [1H] -pyrimidinone. The intensity of the intermolecular interactions between the supramolecular molecules 3550 may vary depending on the conditions.

3A schematically illustrates an insulating filler at a first temperature. 3B schematically shows an insulating filler at a second temperature. Hereinafter, descriptions overlapping with those described above will be omitted.

Referring to FIG. 3A, an insulating filler 3500 may be provided at a first temperature condition. The insulating filler 3500 may be the same as the insulating filler 3500 described above with reference to FIG. 2B. For example, insulating filler 3500 may include first and second filler body portions 3510A, 3510B, functional groups 3520A, 3520B, polymer chain 3530, and supramolecular 3550. The first temperature may be lower than the curing temperature of the filling composition 3000 of FIG. 1 or the manufacturing process temperature of the semiconductor package. For example, the first temperature may be room temperature (eg, 25 ° C.). Each of the pillar body parts 3510A and 3510B may have a first diameter A1. The second filler body part 3510B may be spaced apart from the first filler body part 3510A by a first minimum distance Dmin1 and a first maximum distance Dmax1. The first maximum spacing Dmax1 is the sum of the first minimum spacing Dmin1, the first diameter A1 of the first pillar body portion 3510A, and the first diameter A1 of the second filler body portion 3510B. And may be substantially the same as

Referring to FIG. 3B, the insulating filler 3500 may be heated to provide the second temperature condition. The second temperature may be higher than the first temperature. In a second temperature condition, a second minimum distance Dmin2 may be provided between the first and second pillar body portions 3510A and 3510B. The first and second pillar body parts 3510A and 3510B may be spaced apart from each other by a second maximum distance Dmax2. The second temperature may be a curing temperature of the filling composition 3000 or a manufacturing process temperature of the semiconductor package. For example, the second temperature may be at least 40 ° C.

As the temperature increases (200b), the first and second filler body portions 3510A and 3510B may expand. Each of the first and second pillar body portions 3510A and 3510B may have a second diameter A2 at a second temperature condition. The second diameter A2 may be larger than the first diameter A1. At second temperature conditions, intermolecular interactions (eg, hydrogen bonds) between the supramolecular 3550 may be provided as shown by the dotted lines. Due to the intermolecular interaction of the supramolecular 3550, the minimum distance between the first and second filler body parts 3510A and 3510B may be reduced. Accordingly, the second minimum interval Dmin2 may be smaller than the first minimum interval Dmin1. The second maximum spacing Dmax2 is the sum of the second minimum spacing Dmin2, the second diameter A2 of the first pillar body portions 3510A, and the second diameter A2 of the second pillar body portions 3510B. May be the same as Due to the increase in the second diameter A2 and the decrease in the second minimum spacing Dmin2, the second maximum spacing Dmax2 may be the same as or similar to the first maximum spacing Dmax1.

Referring again to FIG. 3A, the insulating filler 3500 may be cooled to provide the first temperature condition. As the temperature decreases, the first and second filler body portions 3510A and 3510B may contract. Accordingly, each of the first and second pillar body parts 3510A and 3510B may have a first diameter A1 again. At first temperature conditions, intermolecular interactions between supramolecular 3550 may be eliminated / reduced. Accordingly, the minimum distance between the first and second pillar body parts 3510A and 3510B may be increased. The first and second pillar body parts 3510A and 3510B may be spaced apart from each other at a first minimum distance Dmin1. The reduction in the diameter of the filler body portions 3510A and 3510B may be offset by an increase in the minimum spacing of the filler body portions 3510. According to embodiments, the insulating filler 3500 may have a low coefficient of thermal expansion.

Referring back to FIG. 1, the filling composition 3000 may include the insulating filler 3500 of FIG. 2A. Alternatively, the filling composition 3000 may include the insulating filler 3500 of FIG. 2B. The filling composition 3000 may include an insulating filler 3500 to have a low coefficient of thermal expansion. For example, the filling composition 3000 may have a coefficient of thermal expansion of 10 ppm / K to 40 ppm / K. The filling composition 3000 may include an insulating filler 3500 to have high thixotropic. The thixotropy may mean that the viscosity decreases when an external force is applied to a substance, and the viscosity reversibly increases / restores when the external force is removed. For example, the fill composition 3000 may have a Thixotropic Index of 5-20. The thixotropy index may be defined as the ratio of the viscosity at the first external force condition to the viscosity at the second external force condition of a material. The second external force may be greater than the first external force. For example, the thixotropic index may be evaluated as the viscosity of the fill composition 3000 at 3 rpm relative to the viscosity of the fill composition 3000 at 30 rpm.

4A is a view schematically illustrating a packaging material according to an embodiment. Hereinafter, descriptions overlapping with those described above will be omitted.

1 and 4A, the packaging material may include a polymer matrix 3001. The packaging material may be prepared by curing the fill composition 3000. Curing of the filling composition 3000 may refer to curing of the resins 3100. Curing of the fill composition 3000 may be performed by thermosetting or photocuring. Thermal curing may proceed at 100 ° C to 300 ° C. Thermal curing can be performed using a reflow oven or laser. The laser may have an infrared wavelength, but is not limited thereto. During the curing process, a crosslinking reaction of the resins 3100 and the curing agent 3200 may proceed to form a polymer matrix 3001. The insulating filler 3500 does not participate in the crosslinking reaction and may be dispersed in the polymer matrix 3001. The insulating filler 3500 may couple with the polymer matrix 3001 through a functional group (3520 in FIG. 2A, 3520A or 3520B in FIG. 2B). The insulating filler 3500 may be the same as described with reference to FIG. 2A or 2B. Flux 3300 may be removed. The packaging material may have insulating properties.

4B schematically illustrates a packaging material according to another embodiment. Hereinafter, descriptions overlapping with those described above will be omitted.

1 and 4B, a packaging material may be prepared by curing the filling composition 3000. In an embodiment the packaging material may comprise a polymer matrix 3001 ′. Curing of the filling composition 3000 may be performed by the same method as described with reference to FIG. 4A. When the insulating filler 3500 includes an organic material, the insulating filler 3500 may participate in the formation of the crosslink. Thus, the polymer matrix 3001 ′ may be formed by crosslinking of the resins 3100, the insulating filler 3500, and the curing agent 3200. Flux 3300 may be removed. The packaging material may have insulating properties.

5A and 5B illustrate a manufacturing process of a semiconductor package according to example embodiments. Hereinafter, descriptions overlapping with those described above will be omitted.

1 and 5A, the semiconductor chip 200 may be mounted on the substrate 100. For example, a printed circuit board (PCB) may be used as the substrate 100. The external terminal 400 may be provided on the bottom surface 200b of the substrate 100. The external terminal 400 may be electrically connected to an external device (not shown). The external terminal 400 has a shape of a solder ball and may include a metal. The substrate pad 110 may be provided on the top surface of the substrate 100. The substrate pad 110 may include a metal. The substrate pad 110 may be electrically connected to the external terminal 400 through a wiring. In the following drawings, the dotted lines in the substrate 100 schematically represent wirings.

The semiconductor chip 200 may be mounted on the substrate 100 in a flip chip method. For example, the chip pad 210 may be disposed on the bottom surface 200b of the semiconductor chip 200. The connection terminal 500 may include at least one of solder, bump, and filler. The connection terminal 500 may be interposed between the substrate pad 110 and the chip pad 210. The semiconductor chip 200 may be electrically connected to the substrate 100 through the connection terminal 500. The connection terminal 500 may include a conductive material such as silver, tin, bismuth, and / or copper. An oxide film (not shown) may be formed on the sidewall of the connection terminal 500. The oxide layer may be formed by natural oxidation of the connection terminal 500.

The filling composition 3000 may be filled in the gap between the substrate 100 and the semiconductor chip 200. In this case, the filling composition 3000 described in FIG. 1 may be used. Filling composition 3000 may have thixotropy. In the process of injecting or applying the filling composition 3000 between the gaps, an external force may be applied to the filling composition 3000. Since the filling composition 3000 is thixotropic, the viscosity may decrease when an external force is applied. Accordingly, the filling composition 3000 may easily fill the gap between the substrate 100 and the semiconductor chip 200. When the application of the filling composition 3000 is completed, the external force applied to the filling composition 3000 may be removed or reduced. In this case, the viscosity of the filling composition 3000 is increased, so that the filling composition 3000 may be difficult to flow. The filling composition 3000 may maintain a state in which the gap is filled. The filling composition 3000 may surround sidewalls of the connection terminal 500. The filling composition 3000 may further include a flux 3300 to remove the oxide layer. The flux 3300 may be removed by reacting with the oxide film. Accordingly, the reliability of the semiconductor package can be improved.

1 and 5B, the filling composition 3000 may be cured to form the underfill layer 300. The underfill layer 300 may fill the gap between the substrate 100 and the semiconductor chip 200, and may seal the connection terminal 500. According to the embodiments, since the filling composition 3000 maintains the filled state, the underfill film 300 may be easily formed. For example, curing of the fill composition 3000 may be performed by the method described above in the manufacture of the packaging material of FIG. 4A. The underfill layer 300 may include a polymer matrix 3001 and an insulating filler 3500 as illustrated in FIG. 5A. As another example, the underfill layer 300 may include a polymer matrix 3001 ′ as shown in FIG. 5B. The flux 3300 in the fill composition 3000 may be removed by reaction with the oxide film described with reference to FIG. 5A. The flux 3300 may not remain in the underfill layer 300.

Since the filling composition 3000 has a low coefficient of thermal expansion, dimensional stability may be improved in the manufacturing process of the semiconductor package. For example, warpage of the substrate 100 or the semiconductor chip 200 may be prevented in the manufacturing process of the semiconductor package. The manufacturing process of the semiconductor package may include a curing process of the filling composition 3000.

The molding layer 310 may be formed on the substrate 100 to cover the semiconductor chip 200. The molding layer 310 may include an insulating material. For example, the molding layer 310 may include an insulating polymer such as an epoxy-based molding compound. As another example, the molding layer 310 may be manufactured using the filling composition 3000 described with reference to FIG. 1. For example, the filling composition 3000 of FIG. 1 may be applied onto the substrate 100 and the semiconductor chip 200 to form a preliminary molding layer (not shown). The preliminary molding layer may be cured to form a molding layer 310. Curing of the preliminary molding film may proceed by photocuring or thermosetting. Since the filling composition 3000 is thixotropic, the molding layer 310 may be easily formed. The filling composition 3000 may have a low coefficient of thermal expansion, and thus warpage of the substrate 100 or the semiconductor chip 200 may be prevented in the process of forming the molding layer 310. The molding layer 310 may include a packaging material as shown in FIG. 4A or 4B. The manufacture of a semiconductor package can be completed by the manufacture example demonstrated so far.

6 is a cross-sectional view illustrating a semiconductor package in accordance with other embodiments. Hereinafter, descriptions overlapping with those described above will be omitted.

Referring to FIG. 6, the semiconductor package may include a substrate 100, a semiconductor chip 200, an adhesive film 320, and a molding layer 310. The substrate 100 and the semiconductor chip 200 may be substantially the same as described above with reference to FIGS. 5A and 5B. However, the chip pad 210 may be provided on the top surface 200a of the semiconductor chip 200. The lower surface 200b of the semiconductor chip 200 may face the substrate 100. The bonding wire 510 may be provided on the upper surface 200a of the semiconductor chip 200. The bonding wire 510 may be connected to the chip pad 210 and the substrate pad 110. The semiconductor chip 200 may be electrically connected to the substrate 100 through the bonding wire 510.

The adhesive film 320 may be interposed between the substrate 100 and the semiconductor chip 200. The semiconductor chip 200 may be fixed to the substrate 100 by the adhesive film 320. The adhesive film 320 may be manufactured using the filling composition 3000 of FIG. 1. Since the filling composition 3000 is thixotropic, the adhesive film 320 may be easily manufactured. The filling composition 3000 may have a low coefficient of thermal expansion, and thus warpage of the substrate 100 and the semiconductor chip 200 may be prevented in the process of forming the adhesive film 320. The adhesive film 320 may include a packaging material as shown in FIG. 4A or 4B. The adhesive film 320 may have an insulating property.

The molding layer 310 may be formed on the substrate 100 to cover the semiconductor chip 200 and the bonding wire 510. The molding layer 310 may include an insulating polymer such as an epoxy-based molding compound. As another example, the molding layer 310 may be manufactured using the filling composition 3000 described with reference to FIG. 1.

Hereinafter, the preparation of the filling composition according to the experimental examples of the present invention.

Experimental Example 1

Silica synthesized in the form of dendrite having a size of 10 nm-5 mm is prepared with an insulating filler. The insulating filler may be added at 1 wt% to 90 wt%. Maleimide (resin) and succinic anhydride (thermosetting agent) are mixed at stoichiometric ratios of 1: 0.1-1: 5.0 at room temperature (25 ° C.). Flux is added to the mixed liquor to make 0.001 to 50 phr of maleimide. An insulating filler is added to the mixed solution to prepare a filling composition. At this time, the content ratio of the insulating filler is 1wt% to 90wt%.

The curing process is carried out using a reflow oven.

Experimental Example 2

A plate-shaped BaSO ₄ having a diameter of 100 nm-5 mm and a thickness of 10 nm-0.1 mm is prepared as a filler body part. An insulating filler is manufactured by replacing an epoxy functional group on the surface of the filler body part. Epoxy resin and maleic anhydride are mixed at stoichiometric ratio of 1: 0.1-1: 5.0 at room temperature. To the mixture is added 0.001 to 50 phr of flux. An insulating filler is added to the mixed solution to prepare a filling composition. At this time, the content ratio of the insulating filler is 1wt% to 90wt%.

Using the filling composition, an underfill film of the semiconductor package is prepared. At this time, the mounting of the semiconductor chip proceeds to flip chip bonding by thermocompression bonding.

Experimental Example 3

A rod polymer having a length of 100 nm-10 mm and a diameter of 10 nm-1 mm is prepared with an insulating filler. An insulating filler is prepared by replacing a vinyl functional group on the surface of the filler body part. At room temperature, the phenol resin and aldehyde are mixed in a stoichiometric ratio of 1: 0.1-1: 5.0. To the mixture is added 0.001 to 50 phr of flux. An insulating filler is added to the mixed solution to prepare a filling composition. At this time, the content ratio of the insulating filler is 1wt% to 90wt%.

The curing process is carried out using a laser.

Experimental Example 4

Spherical polymers having a diameter of 10 nm to 10 mm are prepared as filler body parts. Prepare nano-sized polymer chains with supramolecular molecules. The polymer chain is bonded to the filler body parts to prepare an insulating filler. At room temperature, bisphenol F-based epoxy polymer and phthalic anhydrie are mixed in a stoichiometric ratio of 1: 0.1-1: 5.0, and then flux is added to 0.0001 to 50 phr. An insulating filler is added to the mixed solution to prepare a filling composition. At this time, the content ratio of the insulating filler is 1wt% to 90wt%.

The curing process is carried out using a laser.

Although the above has been illustrated and described with respect to preferred embodiments of the present invention, the present invention is not limited to the specific embodiments described above, but in the art to which the invention pertains without departing from the spirit of the invention as claimed in the claims. Various modifications can be made by those skilled in the art, and these modifications should not be individually understood from the technical spirit or the prospect of the present invention.

Claims (9)

Suzy;
Curing agent; And
Including an insulating filler,
The insulating filler is:
A first filler body portion;
A second filler body portion;
A polymer chain coupled with the first filler body portion and the second filler body portion; And
A semiconductor package filling composition comprising supramolecular molecules bonded to the polymer chain.
The method of claim 1,
Have a Thixotropic Index of 5 to 20,
A semiconductor package filling composition having a thermal expansion coefficient of 10 ppm / K to 40 ppm / K. The method of claim 1,
The insulating filler is:
A first functional group bonded to a surface of the first filler body portion; And
The semiconductor package filling composition further comprises a second functional group bonded to a surface of the second filler body part. The method of claim 3, wherein
Wherein the first functional group and the second functional group comprise a silane containing group, an epoxy group, a vinyl group, an acid (acid), a hydroxyl group, and / or a rubber-based functional group. The method of claim 1,
A semiconductor package filling composition further comprising a flux. The method of claim 1,
The first filler body portion and the second filler body portion comprises a semiconductor package filling composition. The method of claim 1,
The first filler body portion includes a thermoplastic resin,
The second filler body portion is a semiconductor package filling composition comprising a thermoplastic resin. The method of claim 1,
The polymer chain comprises a thermoplastic polymer,
The curing agent comprises an anhydride group,
The resin is a semiconductor package filling composition comprising a thermosetting resin. The method of claim 1,
Any one of the first filler body portion and the second filler body portion has a spherical, plate-shaped, rod-shaped, star-shaped, and dendrite (dendrite) shape.

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