JP2017203138A - Adhesive for semiconductor, semiconductor device and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an adhesive for a semiconductor reducing a warpage amount after lamination and excellent in connection reliability even when a crimp time is short, a semiconductor device using the adhesive for a semiconductor and a manufacturing method therefor.SOLUTION: The adhesive for semiconductor is an adhesive for a semiconductor which is used for encapsulation of a connection part in a semiconductor device where each connection part of a semiconductor tip and a wiring circuit board is electrically connected to each other or a semiconductor device where each connection part of a plurality of conductor tips is electrically connected to each other. The adhesive contains a (meth)acrylic compound and a curing agent and has curing reaction rate of 80% or more when holding at 200°C for 5 seconds.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor adhesive, a semiconductor device, and a method for manufacturing the same.

  Conventionally, a wire bonding method using a fine metal wire such as a gold wire has been widely applied to connect a semiconductor chip and a substrate. However, in order to meet demands for high functionality, high integration, high speed, etc., for semiconductor devices, A flip chip connection method (FC connection method) in which conductive protrusions called bumps are formed on a chip or a substrate to directly connect the semiconductor chip and the substrate is becoming widespread.

  Flip chip connection methods include metal bonding using solder, tin, gold, silver, copper, etc., metal bonding by applying ultrasonic vibration, method of maintaining mechanical contact by the shrinkage force of the resin, etc. However, from the viewpoint of the reliability of the connection portion, a method of metal bonding using solder, tin, gold, silver, copper, or the like is common.

  For example, in connection between a semiconductor chip and a substrate, a COB (Chip On Board) type connection method that is actively used in BGA (Ball Grid Array), CSP (Chip Size Package), etc. is also a flip chip connection method. . The flip chip connection method is also widely used in a COC (Chip On Chip) type connection method in which bumps or wirings are formed on semiconductor chips to connect the semiconductor chips (for example, see Patent Document 1 below). ).

  For packages that are strongly required to be further reduced in size, thickness, and functionality, chip stack type packages, POP (Package On Package), TSV (Through-Silicon Via), etc., in which the above-mentioned connection methods are stacked and multi-staged are also available. It has begun to spread widely. Since the package can be made smaller by arranging it in a three-dimensional shape instead of a flat shape, these technologies are frequently used, and it is also effective for improving semiconductor performance, reducing noise, reducing mounting area, and reducing power consumption. It is attracting attention as a wiring technology.

JP 2008-294382 A

  When semiconductors are stacked in multiple stages like POP and TSV, there is a problem that warpage occurs. As the chip becomes thinner and the number of stacked layers increases, warping tends to increase.

  Further, in the flip chip package, in recent years, from the viewpoint of improving productivity, it is required to shorten the crimping time when the flip chip package is assembled. In this case, if the adhesive for semiconductor is not sufficiently cured during pressure bonding, the connection portion cannot be sufficiently protected, and connection failure occurs when the pressure during pressure bonding is released. Furthermore, when solder is used for the connection part, if the adhesive for semiconductor is not sufficiently cured in the temperature range lower than the solder melting temperature during crimping, the temperature during crimping will be the solder melting temperature. When it reaches, solder scatters and flows, resulting in poor connection. Therefore, excellent connection reliability is required to suppress these connection failures.

  Therefore, an object of the present invention is to provide an adhesive for a semiconductor that reduces the amount of warping after lamination and has excellent connection reliability even when the pressure bonding time is short. Another object of the present invention is to provide a semiconductor device using such a semiconductor adhesive and a method for manufacturing the same.

  The adhesive for semiconductor according to the present invention is a semiconductor device in which the connection portions of the semiconductor chip and the printed circuit board are electrically connected to each other, or the connection portions of the plurality of semiconductor chips are electrically connected to each other. A semiconductor adhesive used for sealing the connection part in a semiconductor device, which contains a (meth) acryl compound and a curing agent, and has a curing reaction rate of 80% or more when held at 200 ° C. for 5 seconds. is there.

  The adhesive for semiconductor according to the present invention is excellent in connection reliability even when the pressure bonding time is short. According to the adhesive for a semiconductor according to the present invention, it is possible to shorten the press-bonding time, so that productivity can be improved. In addition, according to the semiconductor adhesive of the present invention, the flip chip package can be easily enhanced in function and integrated.

  By the way, in conventional adhesives for semiconductors, voids may occur when the adhesive for semiconductors is hot-pressed in a state where the adhesive is not sufficiently cured. On the other hand, since the semiconductor adhesive according to the present invention can be sufficiently cured in a short time, generation of voids can be easily suppressed.

  Further, in recent years, the metal of the connection part has been shifted from gold which is not easily corroded to solder, copper, etc. for the purpose of cost reduction. Furthermore, with respect to the surface treatment of wiring and bumps, for the purpose of reducing the cost, it is shifting from a corrosion resistant gold or the like to solder, copper, OSP (Organic Solderability Preservative) treatment or the like. In the flip chip package, in addition to the narrow pitch and the increase in the number of pins, the cost reduction is progressing. Therefore, a metal that tends to be corroded and deteriorated in insulation tends to be used, and the insulation reliability is likely to be lowered. On the other hand, the semiconductor adhesive according to the present invention can suppress a decrease in insulation reliability.

  The semiconductor adhesive preferably further contains a polymer component having a weight average molecular weight of 10,000 or more. The semiconductor adhesive preferably has an embodiment in which the polymer component has a weight average molecular weight of 30000 or more and the polymer component has a glass transition temperature of 25 ° C. or less.

  The semiconductor adhesive may be in the form of a film.

  The curing agent is preferably a thermal radical generator. The curing agent is preferably a peroxide.

  The semiconductor device manufacturing method according to the present invention uses the semiconductor adhesive according to the present invention. According to such a manufacturing method, many semiconductor devices having excellent connection reliability can be manufactured in a short time.

  The semiconductor device according to the present invention is obtained by the method for manufacturing a semiconductor device according to the present invention.

  ADVANTAGE OF THE INVENTION According to this invention, the adhesive amount for semiconductors which can reduce the curvature amount after lamination | stacking and is excellent in connection reliability even if a crimping | compression-bonding time is short can be provided. Moreover, according to this invention, the semiconductor device using such an adhesive for semiconductors and its manufacturing method can be provided.

1 is a schematic cross-sectional view showing an embodiment of a semiconductor device according to the present invention. It is a schematic cross section which shows other one Embodiment of the semiconductor device which concerns on this invention. It is a schematic cross section which shows other one Embodiment of the semiconductor device which concerns on this invention. It is a schematic cross section which shows other one Embodiment of the semiconductor device which concerns on this invention.

  Hereinafter, embodiments of the present invention will be described in detail. In the present specification, “(meth) acryl” means acrylic or methacryl corresponding thereto. Further, the content of each component in the composition means the total amount of the plurality of substances present in the composition unless there is a specific notice when there are a plurality of substances corresponding to each component in the composition. .

<Semiconductor adhesive>
The semiconductor adhesive according to the present embodiment is a semiconductor device in which the connection portions of the semiconductor chip and the printed circuit board are electrically connected to each other, or the connection portions of the plurality of semiconductor chips are electrically connected to each other. It is the adhesive for semiconductor sealing used for sealing the said connection part in the manufactured semiconductor device. The adhesive for semiconductors according to this embodiment contains (a) (meth) acrylic compound, (b) curing agent, and (c) polymer component (d) filler component. The curing reaction rate when the semiconductor adhesive according to this embodiment is held at 200 ° C. for 5 seconds is 80% or more.

((A) component: (meth) acrylic compound)
The component (a) is not particularly limited as long as it is a compound having one or more (meth) acryl groups in the molecule. For example, bisphenol A type, bisphenol F type, naphthalene type, phenol novolak type, cresol novolak type, Phenol aralkyl type, biphenyl type, triphenylmethane type, dicyclopentadiene type, fluorene type, adamantane type, isocyanuric acid type, various polyfunctional (meth) acrylic compounds, and the like can be used. The component (a) is preferably bisphenol A, F-type skeleton, naphthalene-type skeleton, fluorene-type skeleton, adamantane-type skeleton, or isocyanuric acid-type skeleton-containing acrylate from the viewpoint of heat resistance. (A) A component can be used individually by 1 type or in combination of 2 or more types.

  The content of the component (a) is preferably 10 to 50% by mass and more preferably 15 to 40% by mass based on the total amount of the adhesive for semiconductor. When the content is less than 10% by mass, it is difficult to sufficiently control the flow of the resin after curing because there are few curing components, and when it exceeds 50% by mass, the warpage of the package tends to increase due to volume shrinkage during curing. There is.

  The number of functional groups of the (meth) acryl group in the component (a) is preferably 3 or less. If the number of functional groups is 4 or more, curing in a short time may not proceed sufficiently because the number of functional groups is large, and the curing reaction rate may decrease (when the curing network proceeds rapidly and unreacted groups remain) There).

  The average molecular weight of the component (a) is preferably smaller than 10,000, more preferably 5,000 or less. The smaller the molecular weight, the easier the reaction and the higher the reaction rate.

((B) component: curing agent)
(B) There will be no restriction | limiting in particular if it functions as a hardening | curing agent of (a) component. As the curing system, radical polymerization is preferred. As the component (b), a radical generator is preferable. Examples of the radical generator include a thermal radical generator (thermal radical generator), a photo radical generator (light radical generator), and the like. As the component (b), a thermal radical generator is preferable from the viewpoint of excellent handleability. (B) A component can be used individually by 1 type or in combination of 2 or more types.

  Examples of the thermal radical generator include azo compounds and peroxides (organic peroxides and the like). As the thermal radical generator, a peroxide is preferable and an organic peroxide is more preferable from the viewpoint of excellent handleability and storage stability. Examples of the organic peroxide include ketone peroxide, peroxyketal, hydroperoxide, dialkyl peroxide, diacyl peroxide, peroxydicarbonate, and peroxyester. As the organic peroxide, hydroperoxide, dialkyl peroxide, and peroxyester are preferable from the viewpoint of storage stability. Furthermore, as the organic peroxide, hydroperoxide and dialkyl peroxide are preferable from the viewpoint of heat resistance.

  (B) 0.5-10 mass parts is preferable with respect to 100 mass parts of (a) component, and, as for content of a component, 1-5 mass parts is more preferable. When the content is less than 0.5 parts by mass, the curing may not proceed sufficiently. When the content exceeds 10 parts by mass, the curing proceeds rapidly and the number of reaction points increases. There is a tendency that unreacted groups remain and the reliability tends to decrease.

((C) component: polymer component)
The adhesive for semiconductors according to this embodiment can further contain a polymer component (except for the compound corresponding to the component (a)). (C) Component is epoxy resin, phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, (meth) acrylic resin, polyester resin, polyethylene resin, polyethersulfone resin, polyetherimide resin, polyvinyl acetal Resins, urethane resins, acrylic rubbers, etc., among them, from the viewpoint of excellent heat resistance and film formability, epoxy resins, phenoxy resins, polyimide resins, (meth) acrylic resins, acrylic rubbers, cyanate ester resins, polycarbodiimides Resins and the like are preferable, and epoxy resins, phenoxy resins, polyimide resins, (meth) acrylic resins, and acrylic rubbers are more preferable. (C) A component can also be used individually or in mixture of 2 or more types or a copolymer.

  The mass ratio of the component (c) and the component (a) is not particularly limited, but the content of the component (a) is preferably 0.01 to 10 parts by mass with respect to 1 part by mass of the component (c). 0.05-5 mass parts is more preferable, and 0.1-5 mass parts is still more preferable. When the content is less than 0.01 parts by mass, the curability may be reduced and the adhesive strength may be reduced. When the content is greater than 10 parts by mass, the film formability may be reduced.

  The glass transition temperature (Tg) of the component (c) is excellent in the adhesiveness of the semiconductor adhesive to the substrate or chip, and is preferably 40 ° C. or less, and preferably 30 ° C. or less from the viewpoint of embedding unevenness on the surface of the semiconductor chip. More preferably, 20 degrees C or less is still more preferable. When Tg exceeds 40 ° C., bumps formed on the semiconductor chip, and irregularities such as electrodes and wiring patterns formed on the substrate cannot be embedded with the semiconductor adhesive (the curing reaction may start). ), Bubbles tend to remain and voids are likely to occur. On the other hand, when Tg exceeds 40 ° C., the elastic modulus at room temperature (25 ° C.) increases, and the warp of the semiconductor chip tends to increase. In addition, said Tg is Tg when using DSC (DSC-7 type | mold by Perkin Elmer Co., Ltd.) and measuring on the conditions of sample amount 10mg, temperature increase rate 10 degree-C / min, and measurement atmosphere: air.

  The weight average molecular weight of the component (c) is preferably 10,000 or more in terms of polystyrene, more preferably 30000 or more, still more preferably 40000 or more, and particularly preferably 50000 or more in order to exhibit good film formability alone. When the weight average molecular weight is less than 10,000, the film formability tends to decrease. In addition, in this specification, a weight average molecular weight means the weight average molecular weight when measured in polystyrene conversion using a high performance liquid chromatography (Shimadzu Corporation C-R4A).

((D) component: filler)
The adhesive for a semiconductor according to the present embodiment controls the viscosity and physical properties of the cured product, and further suppresses the generation of voids and the moisture absorption rate when the semiconductor chip and the substrate are connected. Furthermore, you may contain. Examples of the component (d) include inorganic fillers and resin fillers. Examples of the inorganic filler include insulating inorganic fillers such as glass, silica, alumina, titanium oxide, carbon black, mica, and boron nitride. Among them, silica, alumina, titanium oxide, boron nitride, and the like are preferable, and silica, alumina Boron nitride is more preferable. The insulating inorganic filler may be a whisker, and examples of the whisker include aluminum borate, aluminum titanate, zinc oxide, calcium silicate, magnesium sulfate, and boron nitride. Examples of the resin filler include polyurethane and polyimide. The resin filler can give flexibility at a high temperature such as 260 ° C. as compared with the inorganic filler, so that it is suitable for improving reflow resistance and can be given flexibility, so that it can improve film formability. effective. (D) A component can be used individually by 1 type or in combination of 2 or more types. The shape, particle size and content of the component (d) are not particularly limited.

  From the viewpoint of further excellent insulation reliability, the component (d) is preferably insulative. It is preferable that the semiconductor adhesive according to the present embodiment does not contain a conductive metal filler such as a silver filler or a solder filler.

  The physical properties of the component (d) may be appropriately adjusted by surface treatment. Examples of the surface treatment agent include glycidyl (epoxy), amine, phenyl, phenylamino, (meth) acrylic, and vinyl compounds.

  The average particle size of the component (d) is preferably 1.5 μm or less from the viewpoint of preventing biting during flip chip connection, and more preferably 1.0 μm or less from the viewpoint of excellent visibility (transparency).

  The content of the component (d) is preferably 20 to 70% by mass, and more preferably 25 to 65% by mass based on the entire solid content of the semiconductor adhesive. When the content is less than 20% by mass, the heat dissipation is low, and there is a tendency that voids are generated and the moisture absorption rate is increased. If the content exceeds 70% by mass, the elastic modulus after curing tends to increase and the warpage of the semiconductor chip tends to increase. In addition, the viscosity is increased, the fluidity of the semiconductor adhesive is lowered, and the filler is trapped in the connection portion (trapping), and the connection reliability tends to be lowered.

  The semiconductor adhesive according to this embodiment may further contain additives such as an ion trapper, an antioxidant, a silane coupling agent, a titanium coupling agent, a leveling agent, and a flux agent. These additives can be used alone or in combination of two or more. What is necessary is just to adjust content of these additives suitably so that the effect of each additive may express.

  The curing reaction rate when the semiconductor adhesive according to this embodiment is held at 200 ° C. for 5 seconds is 80% or more, and more preferably 90% or more. When the curing reaction rate at 200 ° C. (below the solder melting temperature) / 5 seconds is lower than 80%, the solder scatters and flows at the time of connection (above the solder melting temperature) and the connection reliability decreases. The curing reaction rate is as follows: after putting 10 mg of uncured adhesive for semiconductor into an aluminum pan, using DSC (DSC-7 model manufactured by PerkinElmer Co., Ltd.), a temperature rising rate of 20 ° C./min, a temperature range of 30 to 300 ° C. It can obtain by measuring by.

  The adhesive for semiconductor according to this embodiment can be pressure-bonded at a high temperature of 200 ° C. or higher. Further, in a flip chip package in which a metal such as solder is melted to form a connection, further excellent curability is exhibited.

  The semiconductor adhesive according to this embodiment is preferably in the form of a film (film-like semiconductor adhesive) from the viewpoint of improving productivity. A method for producing a film-like semiconductor adhesive will be described below.

  First, the component (a), the component (b), the component (c) and other components are added to an organic solvent, and then dissolved or dispersed by stirring, kneading, or the like to prepare a resin varnish. Then, after applying the resin varnish using a knife coater, roll coater, applicator, die coater, comma coater, etc. on the base film subjected to the release treatment, the organic solvent is reduced by heating, and the base film A film-like semiconductor adhesive is formed thereon. Further, before the organic solvent is reduced by heating, a film varnish may be formed on the wafer by a method of spin-coating a resin varnish on the wafer or the like to form a film and then drying the solvent.

  The base film is not particularly limited as long as it has heat resistance capable of withstanding the heating conditions when the organic solvent is volatilized. The polyester film, the polypropylene film, the polyethylene terephthalate film, the polyimide film, the polyetherimide film, the poly Examples include ether naphthalate film and methylpentene film. The base film is not limited to a single layer composed of one of these films, and may be a multilayer film composed of two or more films.

  As conditions for volatilizing the organic solvent from the resin varnish after application, specifically, heating at 50 to 200 ° C. for 0.1 to 90 minutes is preferable. If there is no effect on voids and viscosity adjustment after mounting, it is preferable that the organic solvent volatilizes to 1.5% or less.

<Semiconductor device>
A semiconductor device manufactured using the semiconductor adhesive according to this embodiment will be described. The connection part in the semiconductor device according to the present embodiment may be any of metal bonding between the bump and the wiring and metal bonding between the bump and the bump. In the semiconductor device according to the present embodiment, for example, flip-chip connection for obtaining electrical connection via a semiconductor adhesive can be used.

  FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device (COB type connection mode between a semiconductor chip and a substrate). As shown in FIG. 1A, a semiconductor device 100 includes a semiconductor chip 10 and a substrate (circuit wiring board) 20 that face each other, and wirings 15 that are respectively disposed on mutually facing surfaces of the semiconductor chip 10 and the substrate 20. The semiconductor chip 10 and the wiring 15 of the substrate 20 are connected to each other, and the semiconductor adhesive 10 is filled in the gap between the semiconductor chip 10 and the substrate 20 without any gap. The semiconductor chip 10 and the substrate 20 are flip-chip connected by wiring 15 and connection bumps 30. The wiring 15 and the connection bump 30 are sealed with a semiconductor adhesive 40 and are shielded from the external environment.

  As shown in FIG. 1B, the semiconductor device 200 includes a semiconductor chip 10 and a substrate 20 that face each other, a bump 32 that is disposed on a surface that faces the semiconductor chip 10 and the substrate 20, respectively, The semiconductor adhesive 40 is filled in the gaps between the substrates 20 without any gaps. The semiconductor chip 10 and the substrate 20 are flip-chip connected by connecting opposing bumps 32 to each other. The bumps 32 are sealed with a semiconductor adhesive 40 and are shielded from the external environment.

  FIG. 2 is a schematic cross-sectional view showing another embodiment of a semiconductor device (COC type connection mode between semiconductor chips). As shown in FIG. 2A, the semiconductor device 300 is the same as the semiconductor device 100 except that two semiconductor chips 10 are flip-chip connected by wirings 15 and connection bumps 30. As shown in FIG. 2B, the semiconductor device 400 is the same as the semiconductor device 200 except that the two semiconductor chips 10 are flip-chip connected by the bumps 32.

  There is no restriction | limiting in particular as the semiconductor chip 10, Various semiconductors, such as an element semiconductor comprised from the same kind of elements, such as silicon and germanium, and compound semiconductors, such as gallium arsenide and indium phosphide, can be used.

  The substrate 20 is not particularly limited as long as it is a printed circuit board, and is a metal layer formed on the surface of an insulating substrate mainly composed of glass epoxy, polyimide, polyester, ceramic, epoxy, bismaleimide triazine, polyimide, or the like. A circuit board on which wiring (wiring pattern) is formed by etching away unnecessary portions, a circuit board on which wiring (wiring pattern) is formed on the surface of the insulating substrate by metal plating, etc., and conductivity on the surface of the insulating substrate A circuit board on which wiring (wiring pattern) is formed by printing a substance can be used.

  The connection parts such as the wiring 15 and the bumps 32 are gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper), nickel, tin, lead, etc. And may contain a plurality of metals.

  The surface of the wiring (wiring pattern) is mainly composed of gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper), tin, nickel, or the like. A metal layer may be formed. This metal layer may be composed of only a single component or may be composed of a plurality of components. Moreover, you may have the structure where the some metal layer was laminated | stacked. Copper and solder are generally used because they are inexpensive.

  As materials for the conductive protrusions called bumps, the main components are gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper), tin, nickel, etc. May be used, and may be composed of only a single component or may be composed of a plurality of components. Moreover, you may form so that the structure where these metals were laminated | stacked may be made | formed. The bump may be formed on a semiconductor chip or a substrate. Copper and solder are generally used because they are inexpensive.

  Also, a semiconductor device (package) as shown in FIG. 1 or FIG. 2 is laminated and gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper), You may electrically connect with tin, nickel, etc. Copper and solder are preferred because they are generally used because they are inexpensive. For example, as seen in the TSV technology, a semiconductor adhesive may be flip-chip connected or stacked between semiconductor chips to form a hole penetrating the semiconductor chip and connected to the electrode on the pattern surface.

  FIG. 3 is a schematic cross-sectional view showing another embodiment of the semiconductor device (semiconductor chip laminated type (TSV)). In the semiconductor device 500 shown in FIG. 3, the wiring 15 formed on the interposer 50 is connected to the wiring 15 of the semiconductor chip 10 via the connection bumps 30, so that the semiconductor chip 10 and the interposer 50 are flip-chip connected. ing. The gap between the semiconductor chip 10 and the interposer 50 is filled with the semiconductor adhesive 40 without any gaps. On the surface of the semiconductor chip 10 opposite to the interposer 50, the semiconductor chip 10 is repeatedly stacked via the wiring 15, the connection bumps 30, and the semiconductor adhesive 40. The wirings 15 on the pattern surface on the front and back sides of the semiconductor chip 10 are connected to each other by through electrodes 34 filled in holes that penetrate the inside of the semiconductor chip 10. In addition, as a material of the penetration electrode 34, copper, aluminum, etc. can be used.

  With such TSV technology, a signal can be obtained from the back surface of a semiconductor chip that is not normally used. Furthermore, since the through electrode 34 passes vertically through the semiconductor chip 10, the distance between the semiconductor chips 10 facing each other, and the distance between the semiconductor chip 10 and the interposer 50 can be shortened, and flexible connection is possible. The semiconductor adhesive according to the present embodiment can be applied as a sealing material between the semiconductor chips 10 facing each other or between the semiconductor chip 10 and the interposer 50 in such a TSV technology.

  Further, in a bump forming method with a high degree of freedom such as area bump chip technology, a semiconductor chip can be directly mounted on a mother board without using an interposer. The semiconductor adhesive according to the present embodiment can also be applied when such a semiconductor chip is directly mounted on a mother board. Note that the semiconductor adhesive according to the present embodiment can also be applied when sealing a gap between substrates when two printed circuit boards are stacked.

<Method for Manufacturing Semiconductor Device>
The semiconductor device manufacturing method according to the present embodiment connects a semiconductor chip and a printed circuit board or a plurality of semiconductor chips using the semiconductor adhesive according to the present embodiment. In the method for manufacturing a semiconductor device according to the present embodiment, for example, the semiconductor chip and the printed circuit board are connected to each other via a semiconductor adhesive, and the connection portions of the semiconductor chip and the printed circuit board are electrically connected to each other. A step of obtaining a semiconductor device by connecting, or a step of obtaining a semiconductor device by connecting a plurality of semiconductor chips to each other via a semiconductor adhesive and electrically connecting respective connecting portions of the plurality of semiconductor chips to each other Is provided.

  In the method for manufacturing a semiconductor device according to the present embodiment, the connection portions can be connected to each other by metal bonding. That is, the connection portions of the semiconductor chip and the printed circuit board are connected to each other by metal bonding, or the connection portions of the plurality of semiconductor chips are connected to each other by metal bonding.

  A method for manufacturing the semiconductor device 600 shown in FIG. 4 will be described as an example of the method for manufacturing the semiconductor device according to the present embodiment. In the semiconductor device 600, a substrate (glass epoxy substrate) 60 having wiring (copper wiring) 15 and a semiconductor chip 10 having wiring (copper pillars, copper posts) 15 are connected to each other via a semiconductor adhesive 40. Yes. The wiring 15 of the semiconductor chip 10 and the wiring 15 of the substrate 60 are electrically connected by connection bumps (solder bumps) 30. A solder resist 70 is disposed on the surface of the substrate 60 where the wiring 15 is formed, except for the position where the connection bump 30 is formed.

  In the manufacturing method of the semiconductor device 600, first, a semiconductor adhesive (such as a film-like semiconductor adhesive) 40 is pasted onto the substrate 60 on which the solder resist 70 is formed. Affixing can be performed by a hot press, roll lamination, vacuum lamination, or the like. The supply area and thickness of the semiconductor adhesive are appropriately set depending on the size of the semiconductor chip 10 or the substrate 60, the bump height, and the like. The semiconductor adhesive 40 may be affixed to the semiconductor chip 10, and the semiconductor adhesive 40 is affixed by dicing and dicing into pieces after the semiconductor adhesive 40 is affixed to the semiconductor wafer. The semiconductor chip 10 may be manufactured. After the semiconductor adhesive 40 is attached to the substrate 60 or the semiconductor chip 10, the connection bumps 30 on the wiring 15 of the semiconductor chip 10 and the wiring 15 of the substrate 60 are aligned using a connection device such as a flip chip bonder. To do. Then, the semiconductor chip 10 and the substrate 60 are pressed while being heated at a temperature equal to or higher than the melting point of the connection bump 30 (when solder is used for the connection portion, the solder portion preferably takes 240 ° C. or more). 60 is connected, and the gap between the semiconductor chip 10 and the substrate 60 is sealed and filled with the semiconductor adhesive 40. The connection load depends on the number of bumps, but is set in consideration of absorption of bump height variations and control of the amount of bump deformation. The connection time is preferably a short time from the viewpoint of improving productivity. It is preferable to melt the solder, remove the oxide film and impurities on the surface, and form a metal joint at the connection portion.

  The short connection time (crimping time) means that the time required for 240 ° C. or more (for example, time when using solder) is 4 seconds or less during connection formation (final crimping). The connection time is preferably 3 seconds or less.

After the alignment, the semiconductor device may be manufactured by temporarily fixing and melting the solder bumps by heat treatment in a reflow furnace and connecting the semiconductor chip and the substrate. Temporary fixing does not require the necessity of forming a metal bond, so it can have lower load, shorter time, and lower temperature than the above-mentioned main pressure bonding, and there are merits such as improvement of productivity and prevention of deterioration of connection parts. . After the semiconductor chip and the substrate are connected, the semiconductor adhesive may be cured by performing a heat treatment in an oven or the like. The heating temperature is a temperature at which the curing of the semiconductor sealing adhesive proceeds, and preferably complete curing. The heating temperature and the heating time may be set as appropriate.

  EXAMPLES Hereinafter, although this invention is demonstrated using an Example, this invention is not restrict | limited by these.

<Production of film adhesive>
The compounds used for preparing the film adhesive are shown below.

(A) (Meth) acrylic compound EA-0200 (Osaka Gas Chemical Co., Ltd.)

(B) Curing agent Perbutyl P (NOF Corporation)

(C) High molecular component Copolymer of butyl acrylate and butyl methacrylate Polymer 1 (Molecular weight 150,000, Tg 40 ° C.)
Polymer 2 (Molecular weight 150,000, Tg8 ℃)

(D) Filler Silica filler (manufactured by Admatechs, SE2030, average particle size: 0.5 μm)
・ Methacryl surface-treated nanosilica filler (manufactured by Admatechs, YA050C-SM, average particle size: about 50 nm, hereinafter referred to as SM nanosilica 1)
-Phenylsilane surface-treated nanosilica filler (manufactured by Admatechs Co., Ltd., YC100C-SM, average particle size: about 0.1 μm, hereinafter referred to as SM nanosilica 2)
・ Organic filler (resin filler, manufactured by Rohm and Haas Japan Co., Ltd., EXL-2655: core-shell type organic fine particles)

(E) Stabilizer ・ LA-72 (manufactured by ADEKA Corporation)

Example 1
The amount of (meth) acrylic compound, inorganic filler (SE2030, SM nanosilica 1, SM nanosilica 2), polymer component, organic filler, and silane coupling agent shown in Table 1 in an organic solvent (methyl ethyl ketone) Added to. Thereafter, Φ1.0 mm beads were added in the same mass as the solid content, and the mixture was stirred for 30 minutes with a bead mill (Purder-type fine crusher PM400, manufactured by Vder Scientific). After stirring, the curing agent was added and stirred, and the beads were removed by filtration. The produced varnish was coated with a small coating apparatus (Yurui Seiki) to obtain a film adhesive.

(Examples 2-5, Comparative Examples 1-3)
A film adhesive was obtained in the same manner as in Example 1 except that the used materials were changed as shown in Table 1 below.

<Measurement method of curing reaction rate>
After 10 mg of a sample amount (film adhesive) was put in an aluminum pan, the temperature was measured at a temperature rising rate of 20 ° C./min and a temperature range of 30 ° C. to 300 ° C. using DSC (DSC-7 manufactured by Perkin Elmer). ΔH (J / g) when measuring an untreated sample is “ΔH1”, and ΔH (J / g) when measuring a sample heat-treated on a hot plate at 200 ° C. for 5 seconds is “ΔH2”. The curing reaction rate was calculated by the following formula. A curing reaction rate of 90% or more was indicated as “A”, 80% or more and less than 90% was indicated as “B”, and less than 80% was indicated as “C”. The results are shown in Table 1.
(ΔH1−ΔH2) / ΔH1 × 100 = curing reaction rate (%)

<Evaluation of warpage>
A film adhesive having a thickness of 20 μm was stuck on a silicon wafer having a thickness of 75 μm and a diameter of 8 inches, and cured (200 ° C./20 min) in a clean oven (manufactured by ESPEC). The wafer taken out of the oven was allowed to stand on a horizontal surface, and the highest point on the outer periphery was measured as the amount of warpage of the wafer. The amount of warpage less than 5 mm was indicated as “A”, 5 mm or more and less than 10 mm was indicated as “B”, and 10 mm or more was indicated as “C”. The results are shown in Table 1.

<Viscosity change rate evaluation>
The adhesive on the film having a thickness of 20 μm was bonded to a thickness of 540 μm, and the viscosity was measured in the range of 30 to 200 ° C. using a viscometer (Rheometric Scientific). The viscosity increasing rate was calculated by the following equation, where “ν1” was the lowest point of the viscosity after the adhesive was made, and “ν2” was the lowest point of the viscosity after storage for 7 days at room temperature (25 ° C.). A viscosity increase rate of less than 10% was indicated as “A”, a viscosity increase rate of 10% or more and less than 20% was indicated as “B”, and a viscosity increase rate of 20% or more was indicated as “C”. The results are shown in Table 1.
ν2 / ν1 × 100 = Viscosity increase rate (%)

  In the examples, the curing reaction rate when the adhesive for semiconductor was held at 200 ° C. for 5 seconds was 80% or more, and good results were obtained even in the evaluation of the warpage amount. The viscosity increase rate could be suppressed to 20% or less. On the other hand, in the comparative example, although the curing reaction rate when held at 200 ° C. for 5 seconds was 80% or more, the evaluation results of the warpage amount and the viscosity increase rate were inferior.

  DESCRIPTION OF SYMBOLS 10 ... Semiconductor chip, 15 ... Wiring, 20, 60 ... Board | substrate, 30 ... Connection bump, 32 ... Bump, 34 ... Through electrode, 40 ... Adhesive for semiconductors, 50 ... Interposer, 70 ... Solder resist, 100, 200, 300 , 400, 500, 600... Semiconductor devices.

Claims (11)

  A semiconductor device in which respective connection portions of a semiconductor chip and a printed circuit board are electrically connected to each other, or a semiconductor device in which respective connection portions of a plurality of semiconductor chips are electrically connected to each other. The adhesive for semiconductors used in the invention contains (a) (meth) acrylic compound, (b) curing agent and (c) polymer component, and has an elastic modulus of 3.0 GPa or less at room temperature (25 ° C.) An adhesive for semiconductors.   The adhesive agent for semiconductors of Claim 1 whose hardening reaction rate when it hold | maintains at 200 degreeC for 5 second is 80% or more.   The semiconductor adhesive according to claim 1, wherein the polymer component of the semiconductor adhesive has a weight average molecular weight of 10,000 or more.   The adhesive for semiconductors as described in any one of Claims 1-3 which is a film form.   The adhesive for semiconductors as described in any one of Claims 1-4 whose said hardening | curing agent is a thermal radical generator.   The adhesive agent for semiconductors as described in any one of Claims 1-5 whose said hardening | curing agent is a peroxide.   The adhesive for semiconductors as described in any one of Claims 1-6 containing antioxidant, a polymerization inhibitor, a light stabilizer, or a heat stabilizer.   The adhesive for semiconductors as described in any one of Claims 1-7 whose said antioxidant or polymerization inhibitor is a polymerization inhibitor which has a phenolic antioxidant, a hindered amine light stabilizer, or a piperidine skeleton.   The adhesive for semiconductors as described in any one of Claims 1-8 whose viscosity increase rate after storing for 7 days at room temperature (25 degreeC) is 20% or less.   The manufacturing method of a semiconductor device using the adhesive agent for semiconductors as described in any one of Claims 1-8.   A semiconductor device obtained by the manufacturing method according to claim 9.

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