KR102455212B1 - Semiconductor device, semiconductor device manufacturing method and adhesive - Google Patents

Abstract

The first member having the connecting portion and the second member having the connecting portion are pressed through a thermosetting adhesive at a temperature lower than the melting point of the connecting portion of the first member and the melting point of the connecting portion of the second member, whereby the connecting portion of the first member and the second member having the connecting portion are pressed together. A temperature above the melting point of at least one of the connecting portion of the first member or the connecting portion of the second member by the step of obtaining a pressure bonding body in which the connecting portions of the two members are opposed to each other, and sandwiching the pressure bonding body between a pair of opposingly arranged pressing members A method of manufacturing a semiconductor device comprising a step of obtaining a crimped body by pressing while heating with a furnace, and a step of further heating the crimped body in a pressurized atmosphere is disclosed. The first member is a semiconductor chip or semiconductor wafer, and the second member is a wiring circuit board, semiconductor chip or semiconductor wafer.

Description

Semiconductor device, semiconductor device manufacturing method and adhesive

The present invention relates to a semiconductor device, a method for manufacturing a semiconductor device, and an adhesive.

Conventionally, when connecting a semiconductor chip and a board|substrate, the wire bonding method using metal thin wires, such as a gold wire, has been widely applied.

In recent years, in order to respond to the demand for high functionality, high integration, high speed, etc. for semiconductor devices, conductive protrusions called bumps are provided as connection parts on semiconductor chips or wiring circuit boards, and the semiconductor chips and wiring circuit boards or A flip-chip connection method (FC connection method) in which other semiconductor chips are directly connected is widely adopted. For example, a COB (Chip On Board) type connection method that is a connection between a semiconductor chip and a wiring circuit board is an FC connection method. The FC connection method is also widely used in a COC (Chip On Chip) type connection method in which a bump or wiring is provided as a connection portion on a semiconductor chip to connect between semiconductor chips.

In the FC connection method, in general, from the viewpoint of reliability of the connection portion, the connection portion of solder, tin, gold, silver, copper or the like is metal-bonded in many cases.

Patent Document 1: Japanese Patent Laid-Open No. 2008-294382

In the assembly of the semiconductor device of the FC connection method, in general, first, a semiconductor chip is picked up by a collet from a diced semiconductor wafer and supplied to a pressing device. Then, the semiconductor chip is pressed against the wiring circuit board or other semiconductor chip with a pressing device. During compression, the temperature of the pressing device is raised so that the metal of one or both of the junctions reaches a melting point or higher so that a metal bond is formed. After that, the high-temperature pressing device is cooled, and then the semiconductor chip is supplied to the pressing device again. A semiconductor adhesive may be supplied in advance on the semiconductor chip picked up by the collet, and in that case, in order to continuously manufacture a semiconductor device, a pressing device is applied from a high temperature at which the metal of the connection part melts the semiconductor chip supplied with the semiconductor adhesive. It needs to be cooled down to a low temperature that can be supplied.

Therefore, a semiconductor chip is press-bonded to a wiring circuit board or another semiconductor chip at a relatively low temperature with a single pressing device, and the obtained press-bonded body is pressed while heating to a high temperature using a pressing device separate from the press-bonding device, so that the semiconductor chip is connected to the wiring. By adopting a method of obtaining a connecting body that is electrically connected while being adhered to a circuit board or other semiconductor chip, it is not necessary to repeat the temperature increase and cooling of the pressing device, and it is expected that the production efficiency is improved.

However, this method is also not necessarily sufficient in terms of production efficiency. In the case of continuously manufacturing a large number of semiconductor devices, since a large number of pressing devices are required, there is a limit to the improvement of production efficiency.

According to the studies of the present inventors, a process of press-bonding a semiconductor chip and a substrate or another semiconductor chip at a relatively low temperature using a first pressing device, and a second pressing device separate from the first pressing device, the semiconductor chip Alternatively, the production efficiency can be further improved by a method comprising a step of obtaining a compressed body by pressurizing while heating to a temperature equal to or higher than the melting point of the metal of the connecting portion of the substrate, and a step of further heating the compressed body in a heating furnace. . However, in the case of manufacturing a semiconductor device having a particularly high density, thickness, and miniaturization by this method, it has been clarified by further examination by the present inventors that poor connection may occur or voids may remain in the adhesive. Since voids can cause a decrease in reliability, it is preferable that voids be suppressed.

So, an object of one aspect of the present invention is a method of manufacturing a semiconductor device, comprising: bonding a semiconductor chip or semiconductor wafer having a connecting portion to another member having a connecting portion through an adhesive and simultaneously electrically connecting the connecting portions to each other In this regard, it is possible to efficiently manufacture a large number of semiconductor devices while suppressing the occurrence of voids in the adhesive and ensuring an appropriate electrical connection.

In one aspect of the present invention, a first member having a connecting portion and a second member having a connecting portion are pressed through a thermosetting adhesive at a temperature lower than the melting point of the connecting portion of the first member and the melting point of the connecting portion of the second member. a step of obtaining a press-bonding body in which the connecting portion of the first member and the connecting portion of the second member are disposed to face each other; and the connecting portion of the first member or There is provided a method for manufacturing a semiconductor device, comprising a step of obtaining a crimped body by pressing while heating to a temperature equal to or higher than the melting point of at least one of the connecting portions of the second member, and a step of heating the crimped body in a pressurized atmosphere. The first member may be a semiconductor chip or a semiconductor wafer, and the second member may be a wiring circuit board, a semiconductor chip, or a semiconductor wafer.

Here, in this specification, the process of obtaining a pressure bonding body by crimping|bonding a 1st member and a 2nd member via a thermosetting adhesive agent may be called "a 1st crimping|compression-bonding process". The process of obtaining a pressure-bonding body by pressing while heating the pressure-bonding body to a temperature equal to or higher than the melting point of at least one of the connecting portion of the first member or the connecting portion of the second member is sometimes referred to as a "second crimping process". The process of further heating the crimping body in a pressurized atmosphere is sometimes referred to as a "third crimping process". By combining these three crimping steps, it is possible to efficiently manufacture a large number of semiconductor devices while suppressing the generation of voids in the adhesive and ensuring an appropriate electrical connection.

In the second crimping step of obtaining a crimped body by pressing while heating the pressurized body, the thermosetting adhesive is partially cured, and in the third crimping step of heating the crimped body in a pressurized atmosphere, the thermosetting adhesive may be further cured . In this case, in a 2nd crimping|compression-bonding process, you may harden a thermosetting adhesive agent until the hardening reaction rate becomes 30 % or less. In the third crimping step, the thermosetting adhesive may be further cured until the curing reaction rate is 85% or more.

In the third crimping step of heating the crimping body in a pressurized atmosphere, the plurality of crimping bodies may be collectively heated. The heating temperature in the 3rd crimping|compression-bonding process may be 130 degreeC or more and 300 degrees C or less.

The thermosetting adhesive may contain a thermosetting resin having a weight average molecular weight of less than 10000, a curing agent for the thermosetting resin, and a polymer component having a weight average molecular weight of 10000 or more.

Another aspect of the present invention relates to a thermosetting adhesive used in the above-described method. The minimum melt viscosity of this adhesive agent may be 3000 Pa.s or less. Further, the thermosetting adhesive may be in the form of a film.

Another aspect of the present invention is provided with a first member having a connecting portion, a second member having a connecting portion, and an adhesive layer interposed therebetween, wherein the connecting portion of the first member and the connecting portion of the second member are metal-bonded. To provide a semiconductor device electrically connected by An adhesive bond layer contains the hardened|cured material of a thermosetting adhesive agent, and 3000 Pa.s or less may be sufficient as the minimum melt viscosity of a thermosetting adhesive agent. A semiconductor device in which the first member is a semiconductor chip or a semiconductor wafer and the second member is a wiring circuit board, a semiconductor chip, or a semiconductor wafer.

One aspect of the present invention relates to a method of manufacturing a semiconductor device, comprising: bonding a semiconductor chip or semiconductor wafer having a connecting portion to another member having a connecting portion through an adhesive and simultaneously electrically connecting the connecting portions to each other; It makes it possible to efficiently manufacture a large number of semiconductor devices while suppressing generation of voids in the adhesive and ensuring proper electrical connection.

BRIEF DESCRIPTION OF THE DRAWINGS It is a process diagram which shows one Embodiment of the process of press-bonding a 1st member and a 2nd member to obtain a press-bonding body.
Fig. 2 is a process diagram showing an embodiment of a process of heating and pressurizing a press-bonding body to obtain a press-bonding body.
It is a process diagram which shows one Embodiment of the process of heating a crimping|compression-bonding body in a pressurized atmosphere.
4 is a schematic cross-sectional view showing another embodiment of a semiconductor device.
5 is a schematic cross-sectional view showing another embodiment of a semiconductor device.
6 is a schematic cross-sectional view showing another embodiment of a semiconductor device.
7 is a schematic cross-sectional view showing another embodiment of a semiconductor device.

Hereinafter, some embodiment of this invention is described in detail. However, this invention is not limited to the following embodiment.

(Method for manufacturing semiconductor device)

1, 2, and 3 are process diagrams illustrating an embodiment of a method for manufacturing a semiconductor device. In the method according to the present embodiment, a first member having a connecting portion and a second member having a connecting portion are pressed through a thermosetting adhesive at a temperature lower than the melting point of the connecting portion of the first member and the melting point of the connecting portion of the second member. , a first crimping step of obtaining a pressure-bonding body in which the connecting portion of the first member and the connecting portion of the second member are disposed to face each other; A second crimping step of obtaining a crimped body by pressing while heating to a temperature equal to or higher than the melting point of at least one of the connecting portions of the two members, and a third crimping step of heating the crimping body in a pressurized atmosphere.

FIG. 1 shows a first crimping step of crimping a semiconductor chip 1 (a first member) and a wiring circuit board 2 (a second member) to obtain a press-bonded body 4 . First, as shown in Fig. 1(a), a semiconductor chip 1 having a semiconductor chip body 10 and bumps 30 as a connection portion, a wiring having a substrate body 20 and a wiring 16 as a connection portion On the circuit board 2, it superposes|polymerizes, arrange|positioning the thermosetting adhesive bond layer 40 between them, and the laminated body 3 is formed. After the semiconductor chip 1 is formed by dicing of a semiconductor wafer, it is picked up and conveyed up to the wiring circuit board 2, and positioned so that the bump 30 and the wiring 16 as a connection part are opposingly arranged. The laminate 3 is formed on a stage 42 of a pressing device 43 having a pressing head 41 and a stage 42 as a pair of pressing members for pressing and fitting oppositely arranged. The bump 30 is provided on the wiring 15 provided on the semiconductor chip main body 10 . The wiring 16 of the wiring circuit board 2 is provided at a predetermined position on the substrate main body 20 . The bump 30 and the wiring 16 each have a surface formed of a metal material.

The thermosetting adhesive layer 40 may be a layer formed by affixing a previously prepared film adhesive to the wiring circuit board 2 . The film adhesive can be affixed by hot press, roll lamination, vacuum lamination, or the like. The supply area and thickness of the adhesive layer are appropriately set according to the size of the semiconductor chip 1 or the wiring circuit board 2, the height of the connection portion, and the like. A film adhesive may be affixed to the semiconductor chip 1 . You may produce the semiconductor chip 1 to which the film adhesive was affixed by affixing a film adhesive to a semiconductor wafer, and dicing a semiconductor wafer after that and separating a semiconductor wafer into pieces.

Subsequently, as shown in Fig. 1(b), the laminate 3 is heated and pressurized by sandwiching the stage 42 as a press member for press-fitting and the press head 41, and thereby the semiconductor chip ( 1) The wiring circuit board 2 is press-bonded to obtain a press-bonded body 4 . 1 , the crimping head 41 is disposed on the semiconductor chip 1 side, and the stage 42 is disposed on the wiring circuit board 2 side. A flip chip bonder or the like can be used as a press-fitting press device having a stage and a press-fitting head.

When at least one of the stage 42 and the crimping head 41 heats and presses the laminate 3 for press bonding, the melting point of the bump 30 as a connection portion of the semiconductor chip 1 and the wiring circuit board ( 2) is heated to a temperature lower than the melting point of the wiring 16 as the connecting portion. In this specification, the "melting point of a connection part" means the melting|fusing point of the metal material which forms the surface of a connection part.

In the step of obtaining the pressure bonding body, the pressure bonding member is set to a low temperature so that heat is not transferred to the semiconductor chip or the like when the semiconductor chip or the like as the first member is picked up. During heating and pressurization of the laminate for press-bonding, the press-fitting pressing member may be heated to a certain high temperature in order to increase the fluidity of the adhesive layer to such an extent that drawn voids can be eliminated. In order to shorten cooling time, the difference between the temperature of the pressing member at the time of picking up a semiconductor chip etc. and the temperature of the pressing member at the time of heating and pressurizing a laminated body in order to obtain a pressure bonding body may be small. This temperature difference may be 100 degrees C or less or 60 degrees C or less. This temperature difference may be constant. When the temperature difference is 100° C. or less or 60° C. or less, the time required for cooling the press-wearing pressing member can be shortened.

The temperature of the pressing member for pressure bonding at the time of heating and pressurizing a laminated body in order to obtain a pressure bonding body may be a temperature lower than the reaction start temperature of an adhesive bond layer. The reaction initiation temperature is a DSC thermogram obtained when measured using DSC (manufactured by Perkin Elmer, DSC-Pyirs1) under conditions of a sample amount of adhesive 10 mg, a temperature increase rate of 10° C./min, and a measurement atmosphere: air or nitrogen. It refers to the on-set temperature in

In view of the above, the temperature of the stage 42 and/or the crimping head 41 at the time of heating and pressurizing the laminate in order to obtain the press-bonding body is determined by the temperature of the adhesive being in close contact with the wiring circuit board or semiconductor wafer, etc., and the curing of the adhesive. It can be set to a temperature at which the reaction does not proceed. From this point of view, the temperature of the stage 42 and/or the compression head 41 when heating and pressurizing the laminate to obtain a press-bonded body may be 140° C. or less, 110° C. or less, or 80° C. or less, 25 °C or higher may be sufficient. Even if the first crimping step is performed at a low temperature in this way, a sufficient semiconductor device can be obtained in terms of void suppression and connection by passing through the subsequent second crimping step and the third crimping step.

The pressing load for pressing the laminate 3 in order to obtain the pressure bonding body 4 is appropriately set in consideration of the number of bumps, absorption of uneven height of bumps, and control of the amount of bump deformation. In the pressure bonding body 4 , the connection portion (bump 30 ) of the semiconductor chip 1 and the connection portion (wiring 16 ) of the wiring circuit board 2 may be in contact. Thereby, in a subsequent process, a metal bond is easy to form, and there exists a tendency for little entrapment of an adhesive agent. From the viewpoint of sufficiently bringing the connecting portions into contact, the pressing load for pressing the laminate 3 to obtain the pressure bonding body 4 may be, for example, 0.009 to 0.2 N per bump 30 of the semiconductor chip 1 . good night.

The time for pressing the laminate 3 in order to obtain the press-bonding body 4 may be 5 seconds or less, 3 seconds or less, or 1 second or less, or 0.5 second or more from the viewpoint of productivity improvement.

Fig. 2 shows the second crimping step of obtaining the crimp body 6 by pressing while heating the crimp body 4 . As shown in Figs. 2(a) and 2(b), a pressing device 46 provided separately from the pressing device 43 and having a stage 45 and a pressing head 44 disposed oppositely as a pressing member for main compression bonding. is used to heat and pressurize the pressure bonding body 4 . The press-bonding body 4 is heated and pressurized by sandwiching the stage 45 and the press-bonding head 44 with each other. In the case of the embodiment of FIG. 2 , the crimping head 44 is disposed on the semiconductor chip 1 side of the press-bonding body 4 , and the stage 45 is disposed on the wiring circuit board 2 side of the press-bonding body 4 . is placed.

When at least one of the stage 45 or the crimping head 44 heats and presses the press-bonding body 4 , the melting point of the bump 30 as a connection part of the semiconductor chip 1 or the wiring circuit board 2 . It is heated to a temperature equal to or higher than the melting point of at least one of the melting points of the wiring 16 as the connecting portion.

The oxide film on the surface of the connection portion may be usually removed by the second crimping step. Accordingly, the temperature of the stage 45 and/or the crimping head 44 (that is, the heating temperature in the second crimping step) can be set to be equal to or higher than the temperature at which the oxide film on the surface of the connection part is efficiently removed. From such a viewpoint, the heating temperature in the second crimping step may be 220°C or higher and 330°C or lower. When the metal material of the connection part contains solder, if the heating temperature in the second crimping step is 220°C or higher, the solder of the connection part melts and a sufficient metal bond is easily formed. When the temperature is 330°C or less, voids are less likely to occur, and solder is less likely to scatter. The heating temperature of the 2nd crimping|compression-bonding process may be 220 degreeC or more, when the metal material of a connection part contains Sn/Ag of melting|fusing point about 220 degreeC.

The pressing load in the second crimping step is appropriately set in consideration of removal of the oxide film on the surface of the connection portion, the number of bumps, absorption of bump height unevenness, control of the amount of bump deformation, and the like. When the pressing load is large, the oxide film tends to be easily removed. The pressing load may be, for example, 0.009 to 0.2 N per connection portion (bump) of the semiconductor chip. When the pressing load is 0.009 N or more, the oxide film formed on the connecting portion is easily removed, and the adhesive is less likely to be trapped in the connecting portion. In addition, when the pressing load is 0.2 N or less, the problem that the bumps containing solder or the like is crushed or scattered is unlikely to occur.

The adhesive may be partially cured by the second crimping step to such an extent that it has fluidity to a certain extent in the third crimping step of heating the crimped body in a pressurized atmosphere. When an adhesive agent flows to some extent in a 3rd crimping|compression-bonding process, the residual|survival of the void in an adhesive bond layer can be suppressed further. In addition, by setting the heat history applied to the adhesive in the second crimping step to such an extent that the curing reaction rate is small, the fillet around the connecting portion can be suppressed. From these viewpoints, the curing reaction rate of the adhesive after the second crimping step may be 50% or less, 30% or less, 27% or less, or 25% or less.

The curing reaction rate of the adhesive after the second pressing step is determined based on the change in calorific value due to the curing reaction as measured by differential scanning calorimetry. The calorific value [ΔH (J/g)] by the curing reaction of the adhesive before the first crimping step is set to “ΔH0”, and the calorific value [ΔH (J/g)] by the curing reaction after the second crimping step is set to “ΔH2” Thus, the curing reaction rate after the second crimping step can be calculated by the following formula. Here, it is considered that the curing reaction rate of the adhesive provided in the first pressing step is 0%.

Curing reaction rate (%) after the second crimping step = (ΔH0-ΔH2)/ΔH0×100

Differential scanning calorimetry for measuring the calorific value by curing reaction can be performed at a temperature increase rate of 20°C/min and a temperature range of 30 to 300°C. Instead of the actual crimping process, by measuring the curing reaction rate using a hot plate, an oven, etc., using an adhesive after applying a heat history under the same conditions as the first crimping process and the first crimping process, curing after the second crimping process The reaction rate can be inferred.

The curing reaction rate after the second crimping step can be adjusted mainly based on the time of heating and pressurization. For example, if the heating and pressurization time in the second crimping step is 3 seconds or less or 1 second or less, the adhesive is applied until, for example, the curing reaction rate is 50% or less, 30% or less, 27% or less, or 25% or less. can be hardened.

The pressing member for pressure-fitting and the pressing member for pressure-bonding may be respectively provided in two or more respective apparatuses, or both may be provided in one apparatus.

Then, as shown in FIG. 3, the semiconductor device 100 is obtained through the 3rd crimping|compression-bonding process of heating the crimping body 6 in the pressurized atmosphere in the heating furnace 60. As shown in FIG. A plurality of compression bodies 6 may be collectively heated in one heating furnace 60 . When a plurality of crimping bodies are collectively pressed using a pressing member, it is difficult to uniformly heat the plurality of crimping bodies. In contrast, the heating furnace can easily and uniformly heat a large number of compacted bodies, thereby improving productivity. As a heating furnace, a reflow furnace, a pressurization oven, etc. can be used.

When the crimped body is heated in a pressurized atmosphere, the fillet tends to be suppressed as compared with the case where the crimped body is heated and pressurized using a press member. Fillet suppression is especially important in manufacture of the miniaturized and high density semiconductor device. Here, fillet suppression means suppressing fillet width small, and fillet width is the length of the adhesive agent which protruded to the outer peripheral part of a semiconductor device. The fillet width can be measured, for example, on an image obtained by photographing an external image of a semiconductor device with a digital microscope (manufactured by KEYENCE, VHX-5000). The length (fillet width) of the adhesive bond layer protruding from the peripheral four sides of a semiconductor chip is measured, and the average value is calculated|required as a fillet value. The fillet value may be 150 µm or less from the viewpoint of mounting many semiconductor chips or the like on a semiconductor wafer or a wiring circuit board.

In a state in which the inside of the heating furnace 60 is made into a pressurized atmosphere, the compression body is heated. In this specification, a "pressurized atmosphere" means a gas atmosphere having an atmospheric pressure equal to or higher than atmospheric pressure. The atmospheric pressure in the heating furnace 60 may be 0.1 MPa or more and 0.8 MPa or less, or 0.2 MPa or more and 0.5 MPa or less may be sufficient as it. When the atmospheric pressure is 0.1 MPa or more, voids are particularly effectively eliminated. When atmospheric pressure is 0.8 MPa or less, it is hard to produce problems, such as the warpage of a semiconductor device becomes large.

The heating temperature (atmospheric temperature in the heating furnace 60) in the third crimping step may be a temperature at which the adhesive melts or a temperature equal to or higher than the glass transition temperature (Tg) of the adhesive, or a temperature at which curing of the adhesive proceeds. . The atmospheric temperature in the heating furnace 60 may be, for example, 130°C or more and 300°C or less, or 140°C or more and 270°C or less. When this temperature is 130 degreeC or more, it is easy to harden suitably while an adhesive agent has fluidity|liquidity to a certain extent, and there exists a tendency for a void to be suppressed especially effectively by pressurization. When the temperature is 300°C or less, voids are particularly suppressed and warpage of the semiconductor device is difficult to occur. When heating up the atmosphere in the heating furnace 60 as mentioned later, the highest attained temperature may exist in the said range.

The time for heating and pressurization in the 3rd crimping|compression-bonding process is set to such an extent that hardening of an adhesive agent advances sufficiently. For example, the time for which the atmospheric temperature in the heating furnace 60 is 130 degreeC or more and 300 degrees C or less may be 1 minute or more and 120 minutes or less, or 5 minutes or more and 60 minutes or less may be sufficient as it.

During the third crimping step, the temperature of the atmosphere in the heating furnace 60 may be raised. The rate of temperature increase in that case is not particularly limited, but may be 5°C/min or more and 300°C/min or less, or 10°C/min or more and 250°C/min or less. When the temperature increase rate is 5°C/min or more, productivity is improved, and at the same time, there is a tendency for voids to disappear particularly effectively. When the temperature increase rate is 300° C./min or less, problems such as generation of voids due to rapid temperature increase are unlikely to occur.

A connection body in which the semiconductor chip 1 (first member) and the wiring circuit board 2 (second member) are firmly adhered by the cured adhesive layer 40 by further curing the adhesive by the third crimping step. [Semiconductor device 100] can be formed. The curing reaction rate of the adhesive after the third crimping step may be 80% or more, 85% or more, or 90% or more. When the curing reaction rate of the adhesive after the third crimping step is 80% or more, generation of voids due to springback or the like can be more effectively suppressed.

The curing reaction rate of the adhesive after the third pressing step is also determined based on the change in the amount of heat generated by the curing reaction, measured by differential scanning calorimetry. The calorific value [ΔH (J/g)] by the curing reaction of the adhesive before the first crimping step is set to “ΔH0”, and the calorific value [ΔH (J/g)] by the curing reaction after the third crimping step is set to “ΔH3” Thus, the curing reaction rate after the second crimping step can be calculated by the following formula.

Curing reaction rate (%) after the third crimping step = (ΔH0-ΔH3)/ΔH0×100

The conditions for differential scanning calorimetry are the same as the method for determining the curing reaction rate after the second crimping step.

Although there is no restriction|limiting in particular in the atmosphere in the heating furnace 60, Air, nitrogen, formic acid, etc. may be sufficient.

You may use a semiconductor wafer as at least one of a 1st member and a 2nd member from a viewpoint of productivity improvement. Examples thereof include COW (Chip On Wafer) in which a semiconductor chip is connected to a semiconductor wafer and then into pieces, and a Wafer On Wafer (WOW) in which semiconductor wafers are pressed together and then into pieces.

(Semiconductor device)

4, 5, 6, and 7 are cross-sectional views each showing another embodiment of a semiconductor device that can be manufactured according to the method according to the above-described embodiment.

The semiconductor device 200 shown in FIG. 4 includes a semiconductor chip 1 (a first member) having a semiconductor chip body 10 , a wiring circuit board 2 (a second member) having a substrate body 20 , and , and an adhesive layer 40 interposed therebetween. In the case of the semiconductor device 200 , the semiconductor chip has, as a connection portion, bumps 32 disposed on the surface of the semiconductor chip on the wiring circuit board 2 side. The wiring circuit board 2 has, as a connecting portion, bumps 33 disposed on the surface of the substrate body 20 on the semiconductor chip side. The bump 32 of the semiconductor chip 1 and the bump 33 of the wiring circuit board 2 are electrically connected by metal bonding. That is, the semiconductor chip 1 and the wiring circuit board 2 are flip-chip connected by bumps 32 and 33 . The bumps 32 and 33 are sealed from the external environment by sealing with the adhesive layer 40 .

5 and 6 show a CoC type semiconductor device which is a connection body in which semiconductor chips are connected. The configuration of the semiconductor device 300 shown in FIG. 5 is a semiconductor device except that two semiconductor chips are flip-chip connected via wiring 15 and bump 30 as a first member and a second member. Same as (100). The configuration of the semiconductor device 400 shown in FIG. 6 is the same as that of the semiconductor device 200 except that the two semiconductor chips 1 are flip-chip connected via bumps 32 .

In the semiconductor devices 100, 200, 300, and 400 shown in Figs. 3 to 6, the connecting portions of the wiring 15 and the bump 32 and the like may be a metal film (eg, gold plating) called a pad, or a post. An electrode (eg, a copper filler) may be sufficient. For example, in FIG.2(b), one semiconductor chip may have a copper pillar and a connection bump (solder: tin-silver) as a connection part, and the other semiconductor chip may have gold plating as a connection part. In this case, the connecting portion may reach a temperature equal to or higher than the melting point of the solder having the lowest melting point among the metal materials forming the surface of the connecting portion.

There is no restriction|limiting in particular as the semiconductor chip main body 10, Various semiconductors, such as an elemental semiconductor comprised of the same type of elements, such as silicon and germanium, and compound semiconductors, such as gallium arsenide and indium phosphorus, can be used.

There is no restriction|limiting in particular as the wiring circuit board 2, It has an insulating board which has glass epoxy, polyimide, polyester, ceramic, epoxy, bismaleimide triazine, etc. as a main component as a board|substrate body, A metal layer formed on the surface. A circuit board on which wiring (wiring pattern) is formed by etching unnecessary portions of A circuit board or the like on which a wiring pattern) is formed can be used.

As a material of the connecting portion such as the wirings 15 and 16, the bump 30, the bumps 32 and 33, gold, silver, copper, solder (the main component is, for example, tin-silver, tin-lead, tin- Bismuth, tin-copper, tin-silver-copper), tin, nickel and the like are used. The connection part may be comprised only by a single component, and may be comprised by several components. The connection part may have a structure in which these metals were laminated|stacked. Among metal materials, copper and solder are relatively inexpensive. The connection part may contain solder from a viewpoint of the improvement of connection reliability and curvature suppression.

As the material of the pad, gold, silver, copper, solder (the main component is, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper), tin, nickel or the like is used as the main component. . The pad may be composed of only a single component, or may be composed of a plurality of components. The pad may have a structure in which these metals are laminated. From the viewpoint of connection reliability, the pad may contain gold or solder.

The surface of the wirings 15 and 16 (wiring pattern) contains gold, silver, copper, solder (the main component is, for example, tin-silver, tin-lead, tin-bismuth, tin-copper), tin, nickel, etc. as main components. A metal layer may be formed. This metal layer may be comprised from only a single component, and may be comprised from several components. The metal layer may have a structure in which a plurality of metal layers were laminated. The metal layer may contain relatively inexpensive copper or solder. The metal layer may contain solder from a viewpoint of the improvement of connection reliability and curvature suppression.

By stacking semiconductor devices (packages) such as semiconductor devices 100, 200, 300, 400, gold, silver, copper, solder (the main component is, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, It may be electrically connected with tin-silver-copper), tin, nickel, etc. The metal for connection may be relatively inexpensive copper or solder. For example, an adhesive layer as seen in the TSV technology may be interposed between semiconductor chips for flip-chip connection or lamination, and a hole penetrating the semiconductor chip may be formed to connect with the electrode on the pattern surface.

7 is a cross-sectional view showing another embodiment of a semiconductor device. The semiconductor device 500 shown in FIG. 7 has a TSV structure in which a plurality of semiconductor chips are stacked. In the semiconductor device 500 shown in FIG. 7 , the wiring 15 formed on the interposer main body 50 as a wiring circuit board is connected to the bump 30 of the semiconductor chip 1 , thereby interfacing with the semiconductor chip 1 . The poser 5 is flip-chip connected. An adhesive layer 40 is interposed between the semiconductor chip 1 and the interposer 5 . On the surface of the semiconductor chip 1 on the opposite side to the interposer 5 , the semiconductor chip 1 is repeatedly laminated via the wiring 15 , the bump 30 , and the adhesive layer 40 . The wirings 15 on the patterned surface on the front and back of the semiconductor chip 1 are connected to each other by the through electrodes 34 filled in the holes penetrating the inside of the semiconductor chip body 10 . As a material of the through electrode 34, copper, aluminum, or the like can be used.

According to the semiconductor device of the TSV (Through-Silicon Via) structure as illustrated in FIG. 7, a signal can be acquired also from the back surface of a semiconductor chip which is not normally used. In addition, since the through electrode 34 is vertically passed through the semiconductor chip 1, the distance between the opposing semiconductor chips 1 and between the semiconductor chip 1 and the interposer 5 is shortened for flexible connection. This is possible.

In the case of the semiconductor device 500 of FIG. 7 , a plurality of semiconductor chips 1 are stacked one by one and press-bonded sequentially, after that, a press-bonding body is obtained by a second crimping process, and finally, the plurality of semiconductor chips are pressed together. You may heat in atmosphere.

As another example of a semiconductor device having a multi-layered semiconductor chip, there is a chip stack type package and a POP (Package On Paper), which can also be manufactured according to the same method as the TSV.

These are also effective in reducing the mounting area, increasing the functionality, reducing noise, and saving power due to further miniaturization and thinning of the semiconductor device.

(glue)

Hereinafter, the adhesive agent (thermosetting adhesive agent) which can be used in the manufacturing method of the above-mentioned semiconductor device is demonstrated.

The adhesive according to one embodiment contains a thermosetting resin and a curing agent thereof. The adhesive may further contain a polymer component having a weight average molecular weight of 10000 or more.

<Thermosetting resin>

The weight average molecular weight of the thermosetting resin may be less than 10000. When a thermosetting resin with a weight average molecular weight of less than 10000 reacts with a hardening|curing agent, sclerosis|hardenability of an adhesive agent improves. Moreover, it is advantageous also from a viewpoint of suppression of a void and heat resistance.

As a thermosetting resin, an epoxy resin and an acrylic resin are mentioned, for example.

The epoxy resin is not particularly limited as long as it has two or more epoxy groups in the molecule. Examples of the epoxy resin include bisphenol A type, bisphenol F type, naphthalene type, phenol novolak type, cresol novolak type, phenol aralkyl type, biphenyl type, triphenylmethane type, dicyclopentadiene type, various polyfunctional epoxy resins, etc. is available. These can be used individually or as a mixture of 2 or more types.

There will be no restriction|limiting in particular as long as an acrylic resin has 1 or more (meth)acryl group in a molecule|numerator. As the acrylic resin, for example, bisphenol A type, bisphenol F type, naphthalene type, phenol novolak type, cresol novolak type, phenol aralkyl type, biphenyl type, triphenylmethane type, dicyclopentadiene type, fluorene type, a Dantan type, various multifunctional acrylic resins, etc. can be used. These can be used individually or as a mixture of 2 or more types. In this specification, "(meth)acryl group" is used as a term meaning either an acryl group or a methacryl group.

The acrylic resin may be solid at room temperature (25°C). Compared with the liquid type, voids are less likely to occur in the solid type, and the viscosity (tack) of the B-stage adhesive before curing is small, and handling tends to be excellent.

The number of (meth)acrylic groups which an acrylic resin has may be 3 or less per molecule. When the number of (meth)acryl groups is 3 or less, there exists a tendency for hardening to fully advance easily in a short time until residual|survival of an unreacted group decreases.

Content of the thermosetting resin in an adhesive agent is 10-50 mass parts with respect to 100 mass parts of total mass (mass of components other than a solvent) of an adhesive agent. When content of a thermosetting resin is 10 mass parts or more, there exists a tendency which can control easily the flow of the adhesive agent after hardening. When content of a thermosetting resin is 50 mass parts or less, there exists a tendency for the curvature of a semiconductor device to be suppressed.

<curing agent>

The curing agent may be a compound that reacts with the thermosetting resin, a compound that functions as a catalyst for curing reaction of the thermosetting resin, or a combination thereof. Examples of the curing agent include a phenol resin curing agent, an acid anhydride curing agent, an amine curing agent, an imidazole curing agent, a phosphine curing agent, an azo compound, and an organic peroxide. Among these, you may use an imidazole type hardening|curing agent.

The phenol resin curing agent is not particularly limited as long as it has two or more phenolic hydroxyl groups in the molecule, and examples thereof include phenol novolac, cresol novolac, phenol aralkyl resin, cresol naphthol formaldehyde polycondensate, triphenylmethane type polyfunctional phenol and various polyfunctional phenolic resins. These can be used individually or as a mixture of 2 or more types.

The equivalent ratio (phenolic hydroxyl group/epoxy group, molar ratio) of the phenol resin curing agent to the thermosetting resin may be 0.3 to 1.5, 0.4 to 1.0, or 0.5 to 1.0 from the viewpoint of good curability, adhesiveness and storage stability. When the equivalence ratio is 0.3 or more, the curability is improved and the adhesive strength tends to be improved, and when it is 1.5 or less, the water absorption is suppressed low, and the insulation reliability tends to be improved without excessively remaining unreacted phenolic hydroxyl groups. There is this.

Examples of the acid anhydride curing agent include methylcyclohexanetetracarboxylic dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic dianhydride, and ethylene glycol bisanhydrotrimellitate. These can be used individually or as a mixture of 2 or more types.

The equivalent ratio (acid anhydride group/epoxy group, molar ratio) of the acid anhydride curing agent to the thermosetting resin may be 0.3 to 1.5, 0.4 to 1.0, or 0.5 to 1.0 from the viewpoint of good curability, adhesiveness and storage stability. When the equivalence ratio is 0.3 or more, the curability is improved and the adhesive strength tends to be improved, and when it is 1.5 or less, the water absorption is suppressed low, and the insulation reliability tends to be improved without excessively remaining unreacted acid anhydride. have.

As the amine curing agent, for example, dicyandiamide can be used.

The equivalent ratio (amine/epoxy group, molar ratio) of the amine-based curing agent to the thermosetting resin may be 0.3 to 1.5, 0.4 to 1.0, or 0.5 to 1.0 from the viewpoint of good curability, adhesiveness and storage stability. When the equivalence ratio is 0.3 or more, curability improves and adhesive force tends to improve, and when it is 1.5 or less, unreacted amine does not remain excessively and insulation reliability tends to improve.

Examples of the imidazole-based curing agent include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, and 1-cya. Noethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenyl Midazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'- Undecylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl- s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazineisocyanuric acid adduct, 2-phenylimidazoleisocyanuric acid adducts, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and adducts of epoxy resins and imidazoles are mentioned. . 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole from the viewpoint of excellent curability, storage stability and connection reliability Zoltrimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-tri Azine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2' -Methylimidazolyl-(1')]-ethyl-s-triazineisocyanuric acid adduct, 2-phenylimidazolisocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethyl An imidazole-based curing agent may be selected from midazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole. These can be used individually or in combination of 2 or more types. Microcapsules containing these can also be used as a latent hardener.

0.1-20 mass parts or 0.1-10 mass parts may be sufficient as content of an imidazole type hardening|curing agent with respect to 100 mass parts of thermosetting resins. When the content of the imidazole-based curing agent is 0.1 parts by mass or more, the curability tends to be improved, and when it is 20 parts by mass or less, the adhesive does not harden before the metal bonding is formed, and there is a tendency that poor connection tends to occur. .

Examples of the phosphine-based curing agent include triphenylphosphine, tetraphenylphosphoniumtetraphenylborate, tetraphenylphosphoniumtetra(4-methylphenyl)borate, and tetraphenylphosphonium(4-fluorophenyl)borate.

0.1-10 mass parts or 0.1-5 mass parts may be sufficient as content of a phosphine-type hardening|curing agent with respect to 100 mass parts of thermosetting resins. If the content of the phosphine-based curing agent is 0.1 parts by mass or more, curability tends to be improved, and if it is 10 parts by mass or less, the adhesive does not harden before the metal bonding is formed, and there is a tendency that poor connection tends to occur.

Each of the phenol resin curing agent, the acid anhydride curing agent and the amine curing agent may be used alone or as a mixture of two or more thereof. The imidazole-based curing agent and the phosphine-based curing agent may be used alone, or may be used together with a phenol resin-based curing agent, an acid anhydride-based curing agent, or an amine-based curing agent.

Examples of the organic peroxide include ketone peroxide, peroxyketal, hydroperoxide, dialkyl peroxide, diacyl peroxide, peroxydicarbonate, and peroxyester. From the viewpoint of storage stability, hydroperoxide, dialkyl peroxide, or peroxyester may be selected. In addition, from the viewpoint of heat resistance, hydroperoxide or dialkyl peroxide may be selected. These can be used individually or as a mixture of 2 or more types.

0.5-10 mass % or 1-5 mass % may be sufficient as content of an organic peroxide with respect to an acrylic resin. When content of an organic peroxide is 0.5 mass % or more, there exists a tendency for hardening to fully advance easily. When content of an organic peroxide is 10 mass % or less, there exists a tendency which can suppress the fall of reliability by the molecular chain after hardening becoming short or unreacted group remaining.

The curing agent to be combined with the epoxy resin or the acrylic resin is not particularly limited as long as curing proceeds. The curing agent combined with the epoxy resin is a combination of a phenol resin curing agent and an imidazole curing agent, a combination of an acid anhydride curing agent and an imidazole curing agent, an amine curing agent and an imidazole curing agent from the viewpoint of handling properties, storage stability, and curability. A combination of these, or an imidazole-based curing agent alone may be used. Since productivity improves when connected in a short time, you may use the imidazole type hardening|curing agent excellent in quick-setting property independently. Since volatile matter, such as a low molecular component, can be suppressed by hardening in a short time, void generation|occurrence|production suppression is also possible. In addition, an organic peroxide may be sufficient as the hardening|curing agent combined with an acrylic resin from a viewpoint of handleability and storage stability.

<Polymer component with a weight average molecular weight of 10000 or more>

The polymer component having a weight average molecular weight of 10000 or more may be a thermosetting resin, a thermoplastic resin, or a combination thereof. Examples of the polymer component include epoxy resins, phenoxy resins, polyimide resins, polyamide resins, polycarbodiimide resins, cyanate ester resins, acrylic resins, polyester resins, polyethylene resins, polyethersulfone resins, polyetherimide resins , polyvinyl acetal resin, urethane resin, acrylic rubber, and the like. An epoxy resin, a phenoxy resin, a polyimide resin, an acrylic resin, an acrylic rubber, a cyanate ester resin, or a polycarbodiimide resin, which is excellent in heat resistance and film formability, may be selected. An epoxy resin, a phenoxy resin, a polyimide resin, an acrylic resin, or an acrylic rubber excellent in heat resistance and film formation may be selected. These polymer components can also be used individually or as a mixture or copolymer of 2 or more types. The polymer component having a weight average molecular weight of 10000 or more may be a thermosetting resin reacting with a curing agent.

The mass ratio in particular of a polymer component and the epoxy resin as a thermosetting resin mentioned above is not restrict|limited. In order for the adhesive to maintain the film-like shape, the mass ratio of the epoxy resin to the polymer component may be 0.01 to 5, 0.05 to 4, or 0.1 to 3. When this mass ratio is 0.01 or more, sclerosis|hardenability improves and there exists a tendency for adhesive force to further improve. When this mass ratio is 5 or less, favorable film formability will be easy to be obtained.

The mass ratio in particular of a polymer component and the acrylic resin as a thermosetting resin mentioned above is not restrict|limited. 0.01-10, 0.05-5, or 0.1-5 may be sufficient as mass ratio of the acrylic resin with respect to a polymer component. When this mass ratio is 0.01 or more, sclerosis|hardenability improves and there exists a tendency for adhesive force to further improve. When this mass ratio is 10 or less, favorable film formability will be easy to be obtained.

The glass transition temperature (Tg) of the polymer component may be 50°C or higher and 200°C or lower from the viewpoint of excellent adhesion of the adhesive to a wiring circuit board or a semiconductor chip. When the Tg of the polymer component is 50° C. or higher, the tack (viscosity) force of the adhesive tends to be moderately weakened. When the Tg of the polymer component is 200° C. or less, the adhesive tends to fill irregularities such as bumps of semiconductor chips, electrodes and wiring patterns formed on a wiring circuit board with an adhesive, and the effect of suppressing voids tends to be relatively large. Here, Tg is measured using DSC (manufactured by Perkin Elmer, Ltd., DSC-7 type) under conditions under a sample amount of 10 mg, a temperature increase rate of 10°C/min, and an air atmosphere.

The weight average molecular weight of the polymer component is 10000 or more. In order to independently show favorable film formation, the weight average molecular weight of a polymer component may be 30000 or more, 40000 or more, or 50000 or more, and 500000 or less may be sufficient as it. In this specification, a weight average molecular weight means the value of standard polystyrene conversion measured by gel permeation chromatography (GPC).

The adhesive may contain a flux activator, which is a compound that exhibits flux activity (activity to remove oxides and impurities). Examples of the flux activator include nitrogen-containing compounds having a lone pair of electrons such as imidazoles and amines, carboxylic acids, phenols, and alcohols. Compared with alcohol or the like, the organic acid strongly expresses the flux activity, and the connectivity is improved.

The organic acid that can be used as the flux activator may be a carboxylic acid because the acid hardly remains in the adhesive by reacting with an epoxy resin or the like. The carboxylic acid may be solid from the viewpoint of heat resistance. The melting point of the carboxylic acid may be 70°C or more and 150°C or less from the viewpoint of stability and handleability.

The adhesive may contain a filler in order to control the viscosity and physical properties of the cured product, and to suppress the occurrence of voids and moisture absorption when semiconductor chips or semiconductor chips and a wiring circuit board are connected. The filler may be an insulating inorganic filler, and examples thereof include glass, silica, alumina, titanium oxide, carbon black, mica, boron nitride, and the like. Among these, a filler selected from silica, alumina, titanium oxide and boron nitride, or silica, alumina, and boron nitride may be used. The filler may be a whisker, and examples thereof include aluminum borate, aluminum titanate, zinc oxide, calcium silicate, magnesium sulfate, and boron nitride. The filler may be a resin filler, and examples thereof include polyurethane, polyimide, methyl methacrylate resin, and methyl methacrylate-butadiene-styrene copolymer resin (MBS). These fillers can also be used individually or in combination of 2 or more types. The shape, particle size, and content of the filler are not particularly limited.

Since a resin filler can provide flexibility at high temperatures, such as 260 degreeC, compared with an inorganic filler, it is suitable for a reflow resistance improvement. A resin filler is advantageous also from a viewpoint of film formation improvement.

From the viewpoint of insulation reliability, the filler may be insulating. The adhesive does not need to substantially contain conductive metal fillers such as silver fillers and solder fillers.

From the viewpoint of improving dispersibility and adhesive strength, the filler may be surface-treated. The filler is surface-treated with, for example, a glycidyl (epoxy), amine, phenyl, phenylamino, (meth)acrylic, or vinyl surface treatment agent. From the viewpoint of dispersibility, fluidity, and adhesive force, the filler may be surface-treated with a glycidyl-based, phenylamino-based, or (meth)acrylic-based surface treatment agent. From a viewpoint of storage stability, a phenyl type, an acryl type, or (meth)acrylic type may be sufficient as a surface treating agent. From the viewpoint of the ease of surface treatment, the surface treatment agent may be a silane compound such as an epoxysilane-based, aminosilane-based or acrylsilane-based agent.

The average particle diameter of a filler may be 1.5 micrometers or less from a viewpoint of the entrainment prevention at the time of flip-chip connection, and 1.0 micrometer or less may be sufficient as it from a viewpoint of visibility and transparency.

30-90 mass % or 40-80 mass % may be sufficient as content of a filler on the basis of the solid content mass (mass of components other than a solvent) of an adhesive agent. When content of a filler is 30 mass % or more, heat dissipation property is high, and there exists a tendency for void generation|occurrence|production and a moisture absorption rate to become small. When the content of the filler is 90% by mass or less, the adhesive has an appropriate fluidity, and there is a tendency that a decrease in connection reliability due to entrapment (trapping) of the filler in the connection portion is suppressed.

The adhesive may further contain other components such as an ion trapper, an antioxidant, a silane coupling agent, a titanium coupling agent, and a leveling agent. These may be used individually by 1 type, and may be used in combination of 2 or more type. About these compounding quantities, what is necessary is just to adjust suitably so that the effect of each additive may be expressed.

The minimum melt viscosity of an adhesive agent may be 3000 Pa.s or less, or 2700 Pa.s or less, and 300 Pa.s or more may be sufficient as it from a viewpoint of void suppression. The minimum melt viscosity of the adhesive is a relationship between the viscosity (complex viscosity) and temperature obtained when the viscoelasticity of the adhesive is measured in a temperature range of 30 to 300°C under the conditions of a temperature increase rate of 10°C/min, a frequency of 10 Hz, and a rotation mode. In , it is the value of the lowest viscosity. As a test piece for viscoelasticity measurement, for example, a laminate obtained by laminating a plurality of film adhesives to a thickness of 300 to 450 µm may be used. As the viscosity measuring device, for example, ARES G2 manufactured by TA can be used.

The adhesive may be in the form of a film from the viewpoint of improving the production efficiency of the semiconductor device. A film adhesive can be manufactured by the method of apply|coating the resin varnish containing a thermosetting resin, a hardening|curing agent, and other components as needed to a base film, and drying a coating film.

A resin varnish is prepared by mixing a thermosetting resin hardening|curing agent and other components as needed with an organic solvent, and dissolving or dispersing these by stirring or kneading|mixing. A resin varnish is apply|coated on the base film which performed the mold release process using, for example, a knife coater, a roll coater, an applicator, a die coater, or a comma coater. Then, an organic solvent is reduced from the coating film of a resin varnish by heating, ie, a coating film is dried, and a film adhesive is formed on a base film. A film of a resin varnish may be formed on a semiconductor wafer or the like by a method such as spin coating, and then, a film adhesive may be formed on the semiconductor wafer by a method of drying the coating film.

The base film is not particularly limited as long as it has heat resistance capable of withstanding the heating conditions when the organic solvent is volatilized, and a polyester film, a polypropylene film, a polyethylene terephthalate film, a polyimide film, a polyetherimide film, and a polyether A naphthalate film, a methylpentene film, etc. can be illustrated. The base film is not limited to a single layer containing these films, and may be a multilayer film containing two or more types of materials.

The conditions at the time of volatilizing an organic solvent from the resin varnish after application|coating may be 50-200 degreeC and heating for 0.1 to 90 minutes specifically, may be sufficient. The organic solvent may be removed until the residual amount is 1.5% by mass or less in a range that does not substantially affect voids and viscosity adjustment after mounting.

Example

Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to these Examples.

Review 1

(1-1) Film adhesive

The film adhesive (0.045 mm in thickness) which has a composition shown in Table 1 was produced using the material shown below.

(i) a thermosetting resin having a weight average molecular weight of less than 10000

(epoxy resin)

- Triphenolmethane skeleton-containing polyfunctional solid epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name: EP1032H60, weight average molecular weight: 800 to 2000)

・Bisphenol F-type liquid epoxy resin (manufactured by Mitsubishi Chemical Co., Ltd., product name: YL983U, weight average molecular weight: about 336)

・Flexible semi-solid epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name: YL7175-1000, weight average molecular weight: 1000 to 5000)

(ii) curing agent

2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct (manufactured by Shikoku Chemical Co., Ltd., product name: 2MAOK- PW)

(iii) a polymer component having a weight average molecular weight of 10000 or more

・Phenoxy resin (manufactured by Shin-Nittetsu Chemical Co., Ltd., product name: ZX1356-2, Tg: about 71°C, weight average molecular weight: about 63000, hereinafter referred to as "ZX1356")

(iv) flux agent (carboxylic acid)

·2-Methylglutaric acid (manufactured by Sigma-Aldrich, melting point about 77°C)

(v) fillers (inorganic fillers);

Silica filler (manufactured by Adomatex Co., Ltd., product name: SE2050, average particle diameter 0.5 μm)

・Pinyl surface treatment nano silica filler [manufactured by Adomatex, Ltd., product name: YA050C-SP (hereinafter referred to as “SP nano silica”), average particle diameter of about 50 nm]

(resin filler)

・Organic filler (manufactured by Dow Chemical Nippon Co., Ltd., product name: EXL-2655, core-shell type organic fine particles)

(1-2) Fabrication of semiconductor device

(Example 1)

1st crimping process

The produced film adhesive was cut out, and the film adhesive which has a size of 8 mm x 8 mm x thickness 0.045mm was prepared. This was affixed on a semiconductor chip (10 mm, thickness 0.1 mm, connection metal: Au, product name: WALTS-TEG IP80, manufactured by WALTS). There, a semiconductor chip having solder bumps (chip size: 7.3 mm × 7.3 mm × thickness 0.05 mm, solder bump melting point: about 220°C, bump height: about 45 μm in total of copper filler and solder, number of bumps 1048 pins, Pitch 80 um, product name: WALTS-TEG CC80, manufactured by WALTS) was affixed, and the laminated body was obtained. The laminate was installed on a stage of a flip chip bonder (FCB3, manufactured by Panasonic, Ltd.) having a stage and a crimping head, and by heat press sandwiched by a stage and a crimping head, for 1 second, under a load of 25 N It heated at 80 degreeC, pressurizing the laminated body, and obtained the pressure bonding body.

2nd crimping process

The obtained press-bonding body is moved onto the stage of a separate flip-chip bonder (FCB3, manufactured by Panasonic Corporation) and sandwiched between the stage and the press-bonding head, and heated at 230° C. for 1 second while pressurized with a load of 25 N. A press-bonded body was obtained by hot pressing.

3rd crimping process

The pressing body was installed in an oven of a pressure reflow device (manufactured by Shin-Apex, product name: VSU28). The pressure in the oven was set to 0.4 MPa, and the temperature was raised from room temperature to 175°C at a temperature increase rate of 20°C/min. Then, the pressure-bonding body was heated in a pressurized atmosphere for 10 minutes while maintaining the pressure and temperature to obtain a semiconductor device sample for evaluation.

(Example 2)

A semiconductor device sample for evaluation was obtained in the same manner as in Example 1 except that the heating temperature at the time of heating the crimp body in the oven of the pressure reflow apparatus was changed from 175°C to 260°C.

(Comparative Example 1)

It carried out similarly to Example 1, and obtained the pressure bonding body. The obtained pressure bonding body was heated at 175 degreeC for 10 minutes under atmospheric pressure in the oven apparatus (Yamato Chemical Co., Ltd. make, product name: DKN402), and the semiconductor device sample for evaluation was obtained.

(Comparative Example 2)

A semiconductor device sample for evaluation was obtained in the same manner as in Comparative Example 1 except that the heating temperature at the time of heating the pressure-bonding body under atmospheric pressure was changed from 175°C to 260°C.

(Comparative Example 3)

A compressed body was obtained under the same conditions as in Example 1. The obtained crimp body was heated at 175 degreeC for 10 minutes under atmospheric pressure in the oven apparatus (Yamato Chemical Co., Ltd. make, product name: DKN402), and the semiconductor device sample for evaluation was obtained.

(Comparative Example 4)

A semiconductor device sample for evaluation was obtained in the same manner as in Comparative Example 3 except that the heating temperature at the time of heating the crimp body using the oven apparatus was changed from 175°C to 260°C.

(1-3) Connection evaluation

Using a multimeter (manufactured by ADVANTEST, product name: R6871E), whether or not the initial continuity of the sample was measured. Connectivity was judged on the basis of the following criteria. The results are shown in Table 2.

A: The initial connection resistance of the peripheral part is 30 Ω or more and 35 Ω or less

B: Initial connection resistance value is less than 30 Ω or greater than 35 Ω, or not connected

(1-4) Void evaluation

An external image of the sample was taken with an ultrasound imaging device (product name: Insight-300, manufactured by Insight). From the obtained image, the part of the adhesive bond layer on a chip|tip was blown with the scanner (product name: GT-9300UF, Seiko Abson Co., Ltd. make). Using image processing software Adobe Photoshop, the void part was identified by color tone correction and two-gradation, the area of the adhesive bond layer was set to 100%, and the ratio (void occurrence rate) which the void part occupies by the bar graph was computed. The state of occurrence of voids was evaluated according to the following criteria. The results are shown in Table 2.

A: The void occurrence rate is 5% or less

B: The void occurrence rate is more than 5%

Both Examples 1 and 2 showed good results in terms of void suppression and connection security. That is, according to the method of the present invention, it was confirmed that both suppression of voids and securing of connection were possible.

Review 2

(2-1) Film adhesive

The film adhesive (0.040-0.045 mm in thickness) which has a composition shown in Table 3 was produced using the same material as the material used for film adhesive preparation of examination 1.

(2-2) Fabrication of semiconductor devices and their evaluation

Under the same conditions as in Example 1, a semiconductor device sample for evaluation was obtained. Connections and voids of the obtained sample were evaluated in the same manner as in Examination 1. The results are shown in Table 4.

(2-3) lowest melt viscosity

Using a roll laminator (manufactured by Lamy Corporation, HOT DOG Leon 13DX), a plurality of film adhesives were laminated so that the total thickness was 300 to 450 µm, heating to 60°C. Using the obtained laminate as a test piece, using a rotary rheometer (manufactured by TA, ARES G2), a temperature increase rate of 10°C/min, a frequency: 10 Hz, and rotation mode conditions in a temperature range of 20°C to 300°C The change in viscosity (complex viscosity) was measured. The minimum value of the viscosity in the measured viscosity change was made into the minimum melt viscosity.

(2-6) Curing reaction rate after the third crimping step

A 10 mg sample was collected from the film adhesive before being used in the first crimping step, and using DSC (DSC-7 type manufactured by Perkin Elmer), the temperature range was 30 to 300°C at a temperature increase rate of 20°C/min. differential scanning calorimetry was performed. From the obtained DSC thermogram, the calorific value [?H0 (J/g)] due to the initial curing reaction was determined.

The heat history corresponding to the 1st, 2nd, and 3rd crimping|compression-bonding process similar to Example 1 was added to the film adhesive using a hot plate and oven. Then, the calorific value [ΔH3 (J/g)] by the curing reaction of the corresponding adhesive after the third crimping step was determined by differential scanning calorimetry under the same conditions as above using the sample collected from the film adhesive. From the obtained ΔH0 and ΔH3, the curing reaction rate after the third crimping step was calculated by the following formula.

Curing reaction rate (%) after the third crimping step: (ΔH0-ΔH3)/ΔH0×100

Both Examples 3 and 4 showed favorable evaluation results in terms of void suppression and connection security.

Review 3

(3-1) Film adhesive

The film adhesive (0.045 mm in thickness) which has a composition shown in Table 5 was produced using the same material as the material used in film adhesive preparation of examination 1.

(3-2) Fabrication of semiconductor device

(Example 5)

The semiconductor device sample for evaluation was obtained like Example 1 except having changed the time for heating and pressurizing a laminated body to 3 second in the 1st crimping|compression-bonding process.

(Example 6)

Semiconductor for evaluation in the same manner as in Example 1 except that the time for heating and pressurizing the laminate in the first crimping step was changed to 3 seconds, and in the third crimping step, the pressure in the oven was changed to 0.8 MPa. A device sample was obtained.

(Comparative Example 5)

The film adhesive was cut out and the film adhesive which has the size of 8 mm x 8 mm x thickness 0.045mm was prepared. This was affixed on a semiconductor chip (10 mm, thickness 0.1 mm, connection part metal: Au, product name: WALTS-TEG IP80, WALTS make). There, a semiconductor chip having solder bumps (chip size: 7.3 mm × 7.3 mm × thickness 0.05 mm, bump melting point: about 220°C, bump height: about 45 μm in total of copper filler and solder, number of bumps 1048 pins, pitch 80 um, product name: WALTS-TEG CC80, manufactured by WALTS) was affixed to obtain a laminate. The laminate was set on the stage of a flip chip bonder (FCB3, manufactured by Panasonic Corporation) having a stage and a crimping head. The press-bonded body was obtained by hot pressing heated to a temperature of 80° C. while being pressurized with a load of 25 N for 3 seconds by sandwiching the stage and the crimping head. The obtained pressure bonding body was moved on the stage of another flip-chip bonder (FCB3, Panasonic Corporation make). By sandwiching the press-bonding body with the stage and the crimping head, it was heated to a temperature of 260° C. while pressurized under a load of 25 N for 5 seconds to obtain a semiconductor device sample for evaluation.

(3-3) evaluation

In accordance with the same method as in Examination 1, the connection and voids of the obtained semiconductor device sample were evaluated. The results are shown in Table 6.

(3-4) Hardening reaction rate after the 2nd crimping|compression-bonding process

A 10 mg sample was collected from the film adhesive before being used in the first crimping step, and using DSC (DSC-7 type manufactured by Perkin Elmer), the temperature range was 30 to 300°C at a temperature increase rate of 20°C/min. differential scanning calorimetry was performed. From the obtained DSC thermogram, the calorific value [?H0 (J/g)] due to the initial curing reaction was determined.

The heat history corresponding to the 1st and 2nd crimping|compression-bonding process similar to Examples 5 and 6 was applied to the film adhesive using a hot plate and oven. Then, the calorific value [ΔH2 (J/g)] by the curing reaction of the corresponding adhesive after the second crimping step was determined by differential scanning calorimetry under the same conditions as above using the sample collected from the film adhesive. From the obtained ΔH0 and ΔH2, the curing reaction rate after the second crimping step was calculated by the following formula.

Curing reaction rate (%) after the second crimping step: (ΔH0-ΔH2)/ΔH0×100

(3-5) Fillet evaluation

The external appearance image of the semiconductor device sample was image|photographed with the digital microscope (made by KEYENCE, VHX-5000). From the obtained image, the length of the adhesive layer protruding from each of the four peripheral sides of the semiconductor chip (length in the direction parallel to the main surface of the semiconductor chip) was measured, and the average value of the measured values was recorded as a fillet value.

Both Examples 1 and 2 showed favorable evaluation results from the viewpoint of suppression of voids and securing of connections.

One… semiconductor chip
2… wiring circuit board
3… laminate
4… pressurized body
5… interposer
6… press
10… semiconductor chip body
15, 16… Wiring
20… board body
30, 32, 33... bump
34… through electrode
40… adhesive layer
41, 44... crimping head
42, 45… stage
43, 46... compression device
50… Interposer body
60… heating furnace
100, 200, 300, 400, 500… semiconductor device.

Claims (11)

A first member having a connecting portion and a second member having a connecting portion are sandwiched between a pair of opposingly arranged first pressing members, through a thermosetting adhesive, the melting point of the connecting portion of the first member and the connecting portion of the second member a step of obtaining a press-bonded body in which the connecting portion of the first member and the connecting portion of the second member are opposed to each other by crimping at a temperature lower than the melting point;
obtaining a press-bonded body by sandwiching the press-bonding body between a pair of opposingly arranged second press members, and pressing while heating to a temperature equal to or higher than the melting point of at least one of the connecting portion of the first member or the connecting portion of the second member; ,
A step of further heating the pressurized body in a pressurized atmosphere
including,
the first member is a semiconductor chip or a semiconductor wafer, the second member is a wiring circuit board, a semiconductor chip, or a semiconductor wafer;
In the above step of obtaining the press-bonded body by pressing while heating the press-adhesive body, the thermosetting adhesive is partially cured until the curing reaction rate is 30% or less,
In the step of heating the pressurized body in a pressurized atmosphere, further curing the thermosetting adhesive,
A method of manufacturing a semiconductor device. delete delete The method according to claim 1, wherein in the step of heating the compressed body under a pressurized atmosphere, the thermosetting adhesive is further cured until the curing reaction rate is 85% or more. 5. The method according to claim 1 or 4, wherein in the step of heating the crimped body in a pressurized atmosphere, a plurality of the crimped bodies are collectively heated. The method according to claim 1 or 4, wherein the heating temperature in the step of heating the compressed body in a pressurized atmosphere is 130°C or more and 300°C or less. The method according to claim 1 or 4, wherein the thermosetting adhesive contains a thermosetting resin having a weight average molecular weight of less than 10000, a curing agent for the thermosetting resin, and a polymer component having a weight average molecular weight of 10000 or more. 5. The method according to claim 1 or 4, wherein the minimum melt viscosity of the thermosetting adhesive is 3000 Pa·s or less. delete delete delete

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