JP5471163B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device manufacturing method, a semiconductor device, and an electronic component.

In recent years, development of high-density mounting technology for semiconductor integrated circuits has been promoted in response to demands for higher functionality and miniaturization of electronic devices. One such mounting technique is a chip-on-chip system in package (SiP) in which another semiconductor chip is mounted face down on a semiconductor chip. This structure has attracted attention because it can reduce the thickness of the package and is excellent in the reliability of electrical connection.
In the chip-on-chip type SiP, the connection between the semiconductor chips is usually performed by a flip chip method through fine bumps. At this time, a sealing resin is injected between the semiconductor chips to ensure electrical connection strength and mechanical connection strength (underfill sealing).

  However, in this underfill sealing process, there is a problem that the sealing resin injected between the semiconductor chips bleeds, contaminates the external connection electrodes provided on the lower semiconductor chip surface, and wire bonding cannot be performed. there were. For this reason, it is necessary to leave a distance of about 1.5 mm between the side surface of the upper semiconductor chip and the external connection electrode provided on the lower semiconductor chip. Further, since an adhesive is injected between the semiconductor chips, it is necessary to open a chip gap of at least about 40 μm, which hinders high-density mounting of the semiconductor integrated circuit.

On the other hand, a method is known in which electrical connection and sealing between semiconductor chips are collectively performed via an anisotropic conductive film. For example, a method has been proposed in which an adhesive tape containing solder particles is interposed between members and thermocompression bonded so that the solder particles are interposed between the electrical connection portions of both members and the other portions are filled with a resin component. In addition, a connection method between terminals using a conductive adhesive containing conductive particles and a resin component that cannot be cured at the melting point of the conductive particles has been proposed.
However, it has not been possible to realize further higher density of the semiconductor integrated circuit in the chip-on-chip type SiP by any of these methods.

JP-A 61-276873 Japanese Patent No. 3769688

Under such circumstances, it is desired to develop a chip-on-chip type semiconductor device and electronic component that can meet the demand for higher density of semiconductor integrated circuits.
As a result of intensive studies in view of the above-described problems of the prior art, the present inventors have found that a conductive connecting material having a laminated structure composed of a resin composition and a metal foil selected from solder foil or tin foil is provided between semiconductor chips. Chip-on-chip type that can meet the demands for stable conduction reliability, high insulation of adjacent connection electrodes, and further higher density by performing electrical connection and sealing in a lump. A semiconductor device, a semiconductor device manufacturing method, and an electronic component can be provided.

Such an object is achieved by the present invention described in the following (1) to (11).
(1) A first semiconductor chip having a circuit surface provided with a first connection electrode, and a second semiconductor surface having a circuit surface provided with a second connection electrode electrically connected to the first connection electrode. A chip-on-chip type semiconductor device in which the circuit surface of the first semiconductor chip and the circuit surface of the second semiconductor chip are arranged to face each other. Between the semiconductor chip and the second semiconductor chip, a conductive connecting material having a laminated structure composed of a resin composition and a metal foil selected from a solder foil or a tin foil is interposed and thermally fused. Thus, the first connection electrode and the second connection electrode are electrically connected by solder or tin, and the resin composition is filled in the gap between the first semiconductor chip and the second semiconductor chip. It is characterized by being Conductor device,
(2) The semiconductor device according to (1), in which a semiconductor chip is further disposed on a surface opposite to the circuit surface of the second semiconductor chip.
(3) The semiconductor device further includes a third semiconductor chip having a circuit surface provided with a fourth connection electrode, and the circuit surface of the third semiconductor chip is a surface opposite to the circuit surface of the second semiconductor chip. And a conductive structure having a laminated structure comprising a resin composition and a metal foil selected from a solder foil or a tin foil between the second semiconductor chip and the third semiconductor chip. The fourth connection electrode is opposite to the circuit surface of the second semiconductor chip electrically connected through the through-hole of the second semiconductor chip by thermally fusing with a connection material. A third connection electrode disposed on the side surface is electrically connected with solder or tin, and a gap between the second semiconductor chip and the third chip is filled with the resin composition. A semiconductor device according to (1) or (2) ,
(4) The semiconductor device according to any one of (1) to (3), wherein the resin composition includes a thermosetting resin.
(5) The semiconductor device according to any one of (1) to (4), wherein the resin composition includes a compound having a flux function.
(6) The semiconductor device according to (5), wherein the compound having the flux function acts as a curing agent for the resin composition,
(7) The semiconductor device according to any one of (1) to (6), wherein the conductive connection material includes a laminated structure including a resin composition layer / metal foil layer / resin composition layer.
(8) The semiconductor device according to any one of (1) to (6), wherein the conductive connection material includes a laminated structure including a resin composition layer / metal foil layer.
(9) A first semiconductor having a circuit surface provided with a first connection electrode through a conductive connection material having a laminated structure composed of a resin composition and a metal foil selected from solder foil or tin foil A method of electrically connecting a chip and a second semiconductor chip having a circuit surface provided with a second connection electrode electrically connected to the first connection electrode, the conductive connection material The conductive connecting material at a temperature equal to or higher than the melting point of the metal foil selected from the solder foil or the tin foil, and the disposing step of disposing the circuit between the circuit surface of the first semiconductor chip and the circuit surface of the second semiconductor chip. A method for manufacturing a semiconductor device, comprising: a heating step for heating the resin composition; and a curing and solidification step for curing or solidifying the resin composition;
(10) A semiconductor device manufactured by the manufacturing method according to (9),
(11) An electronic component on which the semiconductor device according to (10) is mounted.

  According to the present invention, a conductive connection material having a laminated structure composed of a resin composition and a metal foil selected from solder foil or tin foil is interposed between semiconductor chips, and electrical connection and sealing are performed collectively. As a result, there is provided a chip-on-chip type semiconductor device, a method for manufacturing the semiconductor device, and an electronic component that can meet the demands for stable conduction reliability, high insulation of adjacent connection electrodes, and further higher density. Is done.

FIG. 1 is a schematic top view and a schematic cross-sectional view of a semiconductor device according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of a multistage stacked semiconductor device according to an embodiment of the present invention. FIG. 3 is a process explanatory diagram of a method for manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 4 is a process explanatory diagram of a method for manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of an electronic component according to an embodiment of the present invention. FIG. 6 is a schematic cross-sectional view of a multistage stacked electronic component according to an embodiment of the present invention.

DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Multistage stack type semiconductor device 10 1st semiconductor chip 20 2nd semiconductor chip 30 3rd semiconductor chip 11 1st connection electrode 12 External connection electrode 20a 2nd semiconductor chip side surface 21 2nd connection electrode 22 Third connection electrode 30a Third semiconductor chip side surface 31 Fourth connection electrode 100 Connection region 101 Insulating region 102 Through hole 103 UBM layer 104 UBM layer 105 Solder bump 107 Protective film 108 Conductive connection material 108a Metal foil 108b Resin Composition 109 Mounting substrate 110 Wire 111 Sealing resin 112 Bump electrode 113 Non-conductive film

Hereinafter, a semiconductor device, a method for manufacturing the semiconductor device, and an electronic component of the present invention will be described in detail.
The semiconductor device of the present invention has a first semiconductor chip having a circuit surface provided with a first connection electrode, and a circuit surface provided with a second connection electrode electrically connected to the first connection electrode. A chip-on-chip type semiconductor device in which a circuit surface of the first semiconductor chip and a circuit surface of the second semiconductor chip are arranged to face each other. The conductive connecting material having a laminated structure composed of a resin composition and a metal foil selected from a solder foil or a tin foil is interposed between the first semiconductor chip and the second semiconductor chip and heated. By fusing, the first connection electrode and the second connection electrode are electrically connected, and the resin composition is filled in the gap between the first semiconductor chip and the second semiconductor chip. It is characterized by being In particular, electrical connection and sealing are performed by interposing a conductive connection material having a laminated structure composed of a resin composition and a metal foil selected from solder foil or tin foil between semiconductor chips having connection electrodes. Accordingly, it is possible to ensure the conduction reliability between the upper and lower connection electrodes and the high insulation between the adjacent connection electrodes. Further, since the interval between the upper and lower semiconductor chips can be reduced, the obtained semiconductor device can be mounted at high density.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
1. Semiconductor Device First, a semiconductor device according to an embodiment of the present invention will be described with reference to FIG.

  FIG. 1A is a schematic top view of a semiconductor device according to an embodiment of the present invention, and FIG. 1B is a schematic cross-sectional view taken along line A-A ′ of FIG. In FIG. 1B, the semiconductor device 1 according to the present embodiment includes a second semiconductor chip in which a connection electrode 21 is provided on a circuit surface (not shown) of the first semiconductor chip 10 in which the connection electrode 11 is provided. 20 circuit surfaces (not shown) are arranged to face each other. As shown in FIG. 1B, the connection electrode 11 is patterned so as to correspond to the connection electrode 21, and a junction region 100 is formed between the connection electrode 11 and the connection electrode 21 that face each other. By means of the bonding region 100, the connection electrodes facing each other are electrically connected. The gap between the semiconductor chip 10 and the semiconductor chip 20 is filled with a resin composition to form an insulating resin region 101, and the insulating resin region 101 ensures electrical insulation between adjacent connection electrodes. Has been. The circuit surface of the semiconductor chip 10 is provided with an external connection electrode 12 for connecting an integrated circuit (not shown) formed on the circuit surface of the semiconductor chip 10 to a mounting substrate.

  Although not particularly limited, the first semiconductor chip 10 is preferably larger in size than the second semiconductor chip 20, and the point shown in FIG. As shown, the semiconductor chip 20 is preferably disposed in a substantially central region of the semiconductor chip 10. In addition, an external connection electrode 12 may be provided on the periphery of the semiconductor chip 10 in order to make an electrical connection with a substrate on which the semiconductor device 1 is mounted using a wire or the like.

  The joining region 100 is a region formed by melting and fixing the metal foil, and the connection electrodes facing each other are electrically connected by this region. The metal foil used for the bonding region 100 is not particularly limited. For example, tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni ), Antimony (Sb), iron (Fe), aluminum (Al), gold (Au), germanium (Ge) and an alloy or tin foil containing at least two selected from the group consisting of copper (Cu) Is preferred. Moreover, the usage-amount of the metal foil used for the joining area | region 100 will not be restrict | limited especially if it can conduct between the connection electrodes which oppose, and can ensure the insulation between adjacent connection electrodes.

  The insulating region 101 is a region formed by filling a resin composition, and electrical insulation between adjacent connection electrodes is ensured by this region. The resin composition used for the insulating region 101 preferably contains a thermosetting resin from the viewpoint of increasing the electrical connection reliability and the mechanical adhesive strength. The amount of the resin composition used for the insulating region 101 is not particularly limited as long as it is a range in which adjacent connection electrodes can be electrically insulated.

  The materials used for the bonding region 100 and the insulating region 101 will be described in detail in the section of the manufacturing method described later.

Although not particularly limited, the thickness of the semiconductor chips 10 and 20 is preferably 10 μm to 1000 μm, and more preferably 750 μm or less. Further, the size and material of the electrode and the external connection electrode are not particularly limited, and may be appropriately selected depending on the application. In addition, about the semiconductor chip, connection electrode, external connection electrode, etc. which are used for this invention, p62-72, p84-88, p39- 60, “All about SiP technology” (Taka Akazawa, published by Industrial Research Council), p176-188, P192-205, JP-A-2004-63353, etc. can be referred to.

  In this embodiment, since it has the above configuration, the entire packaged component can be reduced in thickness and size, and the entire packaged component can be reduced in weight.

  In the present invention, another semiconductor chip may be stacked on the semiconductor device 1 to constitute a multi-stage stack type electronic component. FIG. 2 is a schematic cross-sectional view of a multi-stack electronic component that is an embodiment according to the present invention.

  As shown in FIG. 2, the semiconductor chip 30 provided with the connection electrode 31 is disposed on the surface opposite to the circuit surface provided with the connection electrode 21 of the semiconductor chip 20, and the multi-stack electronic component 2 is provided. Is configured.

  The connection electrode 31 provided on the circuit surface of the semiconductor chip 30 is disposed on the opposite side of the circuit surface of the semiconductor chip 20 through the through hole 102 provided in the thickness direction of the semiconductor chip 20 by the bonding region 100. It is electrically connected to the connection electrode 22 and is electrically connected to the connection electrode 21 on the semiconductor chip 20. Here, for example, the through hole 102 is formed with a through hole in the thickness direction of the semiconductor chip 20 by drilling or the like, plated on the inner wall surface of the through hole, and filled with a resin agent in the plated through hole Or is filled with plating. As for the through hole, for example, JP-A Nos. 2001-127243 and 2002-026241 can be referred to. The gap between the semiconductor chip 20 and the semiconductor chip 30 is filled with a resin composition to form an insulating region 101, and the adjacent connection electrodes are electrically insulated by the insulating region 101. .

2. Semiconductor Device Manufacturing Method Next, a semiconductor device manufacturing method according to an embodiment of the present invention will be described with reference to FIGS. FIG. 3 is a process explanatory view of a semiconductor device manufacturing method (first embodiment) according to one embodiment of the present invention, and FIG. 4 is a semiconductor device manufacturing method (second embodiment) according to another embodiment of the present invention. It is process explanatory drawing of embodiment.

(1) First Embodiment First, a method for manufacturing a semiconductor device according to a first embodiment of the present invention will be described with reference to FIG.

  As shown in FIG. 3A, first, the semiconductor chip 10 provided with the connection electrode 11 on the circuit surface and the semiconductor chip 20 provided with the connection electrode 21 on the circuit surface are prepared. In order to improve electrical connection, the surfaces of the connection electrode 11 and the connection electrode 21 may be previously subjected to treatments such as cleaning, polishing, plating, and surface activation. For example, as shown in FIG. 3A, a UBM (Under Barrier Metal) layer 103 is formed on the surface of the connection electrode 11 and the connection electrode 21 using Ti, Ti / Cu, Cu, Ni, Cr / Ni, or the like. 104 may be formed. The UBM layer may be a single layer or a plurality of layers. The surfaces of the semiconductor chips 10 and 20 may be previously subjected to a surface stabilization treatment for the purpose of protecting the semiconductor element, and a passive film 113 such as a SiN film may be formed.

  Further, as shown in FIG. 3A, a protective film 107 may be provided on the surface of the UBM layer. By having the protective film 107, the surfaces of the semiconductor chips 10 and 20 can be protected. Furthermore, since the protective film 107 has a buffering effect, the semiconductor chips 10 and 20 can be prevented from being damaged. The protective film 107 is not particularly limited, and examples thereof include polyimide-based, polybenzoxazole-based, and benzocyclobutene-based photosensitive resin compositions.

  Subsequently, as shown in FIG. 3B, a conductive connection material 108 is interposed between the semiconductor chip 10 and the semiconductor chip 20. The conductive connecting material 108 has a laminated structure of a metal foil 108a and a resin composition 108b. The form of the conductive connection material is a laminate having a multilayer structure composed of the resin composition 108b and the metal foil 108a, and the resin composition 108b and the metal foil layer 108a may each be a single layer or a plurality of layers. . The laminated structure of the conductive connection material is not particularly limited, and may be a two-layer structure (resin composition / metal foil) of the resin composition 108b and the metal foil 108a, or either or both of the resin composition layer and the metal foil layer. It may be a three-layer structure including a plurality of or a multilayer structure having more than one. From the viewpoint of filling properties when the gap between the connection electrodes is filled with the resin composition 108b, the outermost layer of the conductive connection material is preferably the resin composition 108b. When a plurality of resin compositions 108b or metal foils 108a are used, the composition and thickness of each layer may be the same or different.

  The resin composition 108b is not particularly limited, and a thermosetting resin composition that is cured by heating, a curable resin composition that is cured by irradiation with actinic radiation, or a thermoplastic resin composition can be used. Especially, the thermosetting resin composition hardened | cured by heating is preferable at the point which is excellent in mechanical characteristics, such as a linear expansion coefficient and an elasticity modulus after hardening.

  Next, the conductive connecting material 108 is gradually heated to a temperature at which the metal foil 108a melts. By heating, as shown in FIG. 3C, the metal foil 108a is melted, and the resin composition 108b is moved and aggregated in a self-aligned manner on the surface of the connection electrode, thereby forming the bonding region 100. By this region bonding 100, the surface of the connection electrode and the molten metal foil 108a are bonded and the connection electrodes facing each other are electrically connected. In the case of a conductive connection material such as an anisotropic conductive film containing conventional solder particles, the solder particles are not uniformly distributed in the thickness direction of the circuit surface having the connection electrodes. On the other hand, the present invention uses a metal foil, and the metal foil is uniformly distributed in the thickness direction of the circuit surface having the connection electrode. The metal foil can be stably aggregated. Further, in the anisotropic conductive film containing conventional solder particles, the solder particles are small in the self-aggregation property, so that the solder particles remain between the adjacent connection electrodes, and the insulation between the adjacent connection electrodes may be lowered. In contrast, since the present invention uses a metal foil having a high self-aggregation property, the metal foil does not remain between the adjacent connection electrodes, so that the insulation of the adjacent connection electrodes can be secured. It becomes. In addition, the gap between the semiconductor chips is filled with the resin composition 108 b of the conductive connection material 108 to form the insulating region 101. Thereby, adjacent internal connection electrodes are electrically insulated.

  When the resin composition 108b is a thermosetting resin composition, the heating temperature is equal to or higher than the melting point of the metal foil 108a and is heated at a temperature at which the curing of the thermosetting resin composition is not completed. Here, “the temperature at which the curing of the thermosetting resin composition is not completed” means that the melt viscosity of the thermosetting resin composition is preferably 100 Pa · s or less, more preferably 50 Pa · s or less, and particularly preferably 10 Pa. -It means a temperature that is s or less. However, in the connection method of the present invention, in order to prevent the conductive connection material from protruding from the substrate when heated, the melt viscosity of the thermosetting resin composition is preferably 0.001 Pa · s or more, more preferably Heating is performed at a temperature of 0.005 Pa · s or more, particularly preferably 0.01 Pa · s or more. The heating temperature only needs to be equal to or higher than the melting point of the metal foil. The upper limit is not particularly limited as long as the melting viscosity can be satisfied by adjusting the heating time, for example, shortening the heating time.

When the resin composition 108b is a thermoplastic resin composition, the melting point of the metal foil 108a is higher than the melting point of the metal foil 108a, and the melt viscosity of the thermoplastic resin composition is preferably 100 Pa · s or less, more preferably 50 Pa · s. Hereinafter, the temperature is particularly preferably 10 Pa · s or less. However, in the connection method of the present invention, the melt viscosity of the thermoplastic resin composition is preferably 0.001 Pa · s or more, more preferably, in order to prevent the conductive connection material from protruding from the substrate when heated. Heating is performed at a temperature of 0.005 Pa · s or more, particularly preferably 0.01 Pa · s or more.
The melt viscosity of the thermosetting resin composition can be measured by the following method.

First, about 10 mg of the resin composition was precisely weighed, and using a differential scanning calorimeter (Seiko Instruments Inc.), using a heating rate of 5 ° C./min, 10 ° C./min, and 20 ° C./min, Calculate the amount of heat generated by curing. Next, Kamal equation model (POLYMER ENGINEERING AND SCIENCE, JANUARY, 1973, Vol. 13, No. 1 Kinetics and Thermal Characterization
of Thermoset Cure M. R. KAMAL and S.K. SOUROUR) is used to calculate the curing reaction rate α at time t when the resin composition is exposed to isothermal conditions. Further, by applying the calculated curing reaction rate α, the Cross model (AIChE Journal Vol.28, No. 2 Studies of Mold Filling and Curing in the Reaction Injection Molding, Process J. M. CASTRO and C. W. MAC). The melt viscosity of the resin composition after 5 seconds at the melting point of the metal foil was calculated.

＜Ｃｒｏｓｓモデル＞

Calculation formulas for melt viscosity by the Kamal equation model and the Cross model are as follows.
<Kamal equation model>

<Cross model>

The melt viscosity of the thermoplastic resin composition can be measured by the following method.
The obtained thermoplastic resin composition was measured using a viscoelasticity measuring device ("Ares Viscoelasticity Measurement System" manufactured by Rheometric Scientific F.E. Co., Ltd.) with a parallel plate of 25 mmφ and a gap of thermoplastic. When the resin composition was liquid, it was 0.5 mm. When the thermoplastic resin composition was film, 0.05 mm, the frequency was 10 rad / s, and the rate of temperature increase was measured at 20 ° C./min. Here, the melt viscosity at the melting point of the metal foils of the examples and comparative examples was measured.

  Note that when the heating temperature reaches the melting point of the metal foil 108a, the semiconductor chip 10 and the semiconductor chip 20 may be pressurized so that the distance between the opposing connection electrodes is reduced.

  Subsequently, when the resin composition 108b of the conductive connecting material 108 is a thermosetting resin composition, the thermosetting resin composition is cured by heating to ensure electrical connection strength and mechanical adhesive strength. Thus, the opposing connection electrode 11 and connection electrode 21 are electrically connected, and the gap between the semiconductor chip 10 and the semiconductor chip 20 can be sealed with an insulating resin.

  In this embodiment, the connection electrodes facing each other can be electrically connected in this way, and the gap between the semiconductor chip 10 and the semiconductor chip 20 can be sealed with the resin composition.

<Metal foil>
In the present invention, the metal foil layer constituting the conductive connection material is a layer constituted by a metal foil selected from solder foil or tin foil. The metal foil layer should just be formed in at least one part of the resin composition by planar view, and may be formed in the whole surface of the resin composition.

  The shape of the metal foil layer is not particularly limited, and a certain shape may be repeatedly formed in a pattern shape, or the shape may be irregular. Regular shapes and irregular shapes may be mixed. As the shape of the metal foil layer, for example, a dotted pattern (a), a striped pattern (b), a polka dot pattern (c), a rectangular pattern (d), a checkered pattern (e), a frame shape ( f), lattice pattern (g), multiple frame shapes (h), and the like. These shapes are examples, and these shapes can be combined or deformed depending on the purpose and application.

  In one embodiment of the present invention, when connecting a full grid type semiconductor chip in which connection electrodes to be connected are arranged on the entire semiconductor chip connection surface, a sheet-like metal foil is applied to the entire surface of the resin composition. It is preferable to form.

  In addition, when connecting a peripheral type semiconductor chip in which the connection electrode to be connected is arranged at the periphery of the connection surface of the semiconductor chip, the viewpoint of effectively using the metal foil, and between adjacent connection electrodes From the viewpoint of not leaving the metal foil, it is preferable to form a patterned metal foil repeatedly on at least a part of the resin composition. At this time, the shape of the metal foil can be appropriately selected depending on the pitch and form of the connection electrodes.

  The metal foil used in the present invention is not particularly limited, and tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni), antimony (Sb), iron (Fe), aluminum (Al), gold (Au), germanium (Ge), an alloy of at least two metals selected from the group consisting of copper (Cu), or a simple tin Is preferred.

Among these alloys, in consideration of melting temperature and mechanical properties, Sn—Pb alloy, Sn—Bi alloy which is lead-free solder, Sn—Ag—Cu alloy, Sn—In alloy, Sn— More preferably, it is made of an alloy containing Sn, such as an alloy of Ag. In the case of an Sn-Pb alloy, the tin content is preferably 30% by weight or more and less than 100% by weight, more preferably 35% by weight or more and less than 100% by weight, and particularly preferably 40% by weight or more. . Moreover, it is preferable that it is less than 100 weight%. In the case of lead-free solder, the tin content is preferably 15% by weight or more and less than 100% by weight, more preferably 20% by weight or more and less than 100% by weight, and more preferably 25% by weight or more and less than 100% by weight. It is particularly preferred that it is less than. For example, Sn-Pb alloy is Sn63-Pb (melting point 183 ° C), and lead-free solder is Sn-3.0Ag-0.5Cu (melting point 217 ° C), Sn-3.5Ag (melting point 221 ° C) Sn-58Bi (melting point 139 ° C.), Sn-9.0Zn (melting point 199 ° C.), Sn-3.5Ag-0.5Bi-3.0In (melting point 193 ° C.), Au-20Sn (melting point 280 ° C.), etc. Is mentioned.

  In the present invention, a metal foil having a desired melting point and composition can be used as appropriate according to the heat resistance of the semiconductor chip to be connected and lead-free. For example, in order to prevent the semiconductor chip from being damaged by the thermal history, a metal foil having a melting point of 330 ° C. or lower (more preferably 300 ° C. or lower, particularly preferably 280 ° C. or lower, more preferably 260 ° C. or lower) is used. It is preferable. In order to ensure the heat resistance of the semiconductor device after interelectrode connection, it is preferable to use a metal foil having a melting point of 100 ° C. or higher (more preferably 110 ° C. or higher, particularly preferably 120 ° C. or higher). In addition, melting | fusing point of metal foil can be measured with a differential scanning calorimeter (DSC).

  The thickness of the metal foil can be appropriately selected according to the gap between the opposing connection electrodes, the distance between adjacent connection electrodes, and the like. The thickness of the metal foil is, for example, preferably 0.5 μm or more, more preferably 3 μm or more, particularly preferably 5 μm or more, and preferably 100 μm or less, and 50 μm or less. More preferably, it is particularly preferably 20 μm or less. When the thickness of the metal foil is less than the lower limit, unconnected connection electrodes tend to increase due to lack of solder or tin.On the other hand, when the thickness exceeds the upper limit, bridging occurs between adjacent connection electrodes due to excessive solder or tin, resulting in a short circuit. It tends to be easier.

  The method for producing the metal foil is not particularly limited, and examples thereof include a method for producing from a lump such as an ingot by rolling, and a method for forming the metal foil by direct vapor deposition, sputtering, plating, etc. on the resin composition. In addition, there is no particular limitation on a method for producing a metal foil having a repetitive pattern. However, a method of punching a metal foil into a predetermined pattern, a method of forming a predetermined pattern by etching, or a shielding plate or a mask is used. The method of forming by vapor deposition, sputtering, plating, etc. is mentioned.

  In the conductive connection material used in the present invention, the blending amount of the metal foil is preferably 5% by weight or more in the conductive connection material, more preferably 20% by weight or more, and more preferably 30% by weight or more. Particularly preferred. Further, it is preferably 97% by weight or less, more preferably 80% by weight or less, and particularly preferably 70% by weight or less. When the blending amount of the metal foil is less than the lower limit, unconnected connection electrodes tend to increase due to lack of solder or tin. On the other hand, when the upper limit is exceeded, there is a tendency that bridging is likely to occur between adjacent connection terminals due to excessive solder or tin.

  Or you may define the compounding quantity of metal foil by the volume ratio with respect to a conductive connection material. For example, the blending amount of the metal foil is preferably 1% by volume or more, more preferably 5% by volume or more, and particularly preferably 10% by volume or more with respect to the conductive connection material. Moreover, it is preferable that it is 90 volume% or less, It is more preferable that it is 80 volume% or less, It is especially preferable that it is 70 volume% or less. When the blending amount of the metal foil is less than the lower limit, unconnected connection electrodes tend to increase due to lack of solder or tin. On the other hand, when the upper limit is exceeded, bridging tends to occur between adjacent connection electrodes due to excessive solder or tin.

<Resin composition>
Next, the resin composition used in the present invention will be described.
The resin composition of the present invention is not particularly limited, and examples thereof include a thermosetting resin composition, a curable resin composition that is cured by irradiation with actinic radiation, and a thermoplastic resin composition as described above. However, from the viewpoint that the workability of the conductive connecting material and the reliability of the semiconductor device are excellent, a case where the thermosetting resin composition is a mixture of a thermoplastic resin and a thermosetting resin is preferable.

(1) When the resin composition is a thermosetting resin composition (a) Thermosetting resin The thermosetting resin according to the thermosetting resin composition is usually used as an adhesive component for manufacturing a semiconductor device. There is no particular limitation as long as it is possible. Such a thermosetting resin is not particularly limited, but is preferably one that cures at a temperature equal to or higher than the melting point of the metal foil. For example, an epoxy resin, a phenoxy resin, a silicone resin, an oxetane resin, a phenol resin, (Meth) acrylate resin, polyester resin (unsaturated polyester resin), diallyl phthalate resin, maleimide resin, polyimide resin (polyimide precursor resin), bismaleimide-triazine resin and the like. In particular, the use of a thermosetting resin containing at least one selected from the group consisting of epoxy resins, (meth) acrylate resins, phenoxy resins, polyester resins, polyimide resins, silicone resins, maleimide resins, and bismaleimide-triazine resins. preferable. Among these, an epoxy resin is preferable from the viewpoint of excellent curability and storage stability, heat resistance of the cured product, moisture resistance, and chemical resistance. Moreover, these curable resin components may be used individually by 1 type, or may use 2 or more types together.

  In the present invention, the form of the thermosetting resin can be appropriately selected according to the form of the thermosetting resin composition. When using a liquid thermosetting resin composition, it is preferable to use a liquid thermosetting resin, and when using a solid thermosetting resin composition, liquid and solid It is preferable to use any thermosetting resin. Moreover, when using a film-like thermosetting resin composition at room temperature, it is preferable to use a film-forming resin in combination.

  In the present invention, any epoxy resin that is liquid at room temperature and solid at room temperature can be used as the epoxy resin. It is also possible to use an epoxy resin that is liquid at room temperature and an epoxy resin that is solid at room temperature. When the thermosetting resin composition is liquid, it is preferable to use an epoxy resin that is liquid at room temperature. When the thermosetting resin composition is solid, both liquid and solid epoxy resins are used. In the case of using a film-like thermosetting resin composition at room temperature, it is preferable to use a film-forming resin component in combination as appropriate.

  The epoxy resin that is liquid at room temperature (25 ° C.) used in the present invention is not particularly limited, and examples thereof include bisphenol A type epoxy resins and bisphenol F type epoxy resins. Moreover, you may use together a bisphenol A type epoxy resin and a bisphenol F type epoxy resin.

  The epoxy equivalent of the epoxy resin that is liquid at room temperature is preferably 150 to 300 g / eq, more preferably 160 to 250 g / eq, and particularly preferably 170 to 220 g / eq. If the epoxy equivalent is less than the above lower limit, the shrinkage of the cured product tends to increase, and warping may occur. On the other hand, when the upper limit is exceeded, when a film-forming resin is used in combination, the reactivity with a film-forming resin, particularly a polyimide resin, tends to decrease.

  The epoxy resin solid at room temperature (25 ° C.) used in the present invention is not particularly limited, but is bisphenol A type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, glycidyl. Examples include amine type epoxy resins, glycidyl ester type epoxy resins, trifunctional epoxy resins, and tetrafunctional epoxy resins. Among these, solid trifunctional epoxy resin, cresol novolac type epoxy resin and the like are preferable. Moreover, these epoxy resins may be used individually by 1 type, or may use 2 or more types together. The softening point of the epoxy resin that is solid at room temperature is preferably 40 to 120 ° C, more preferably 50 to 110 ° C, and particularly preferably 60 to 100 ° C. When the softening point is within the above range, tackiness can be suppressed and handling can be easily performed.

  In the present invention, commercially available products as such thermosetting resins can be used, and further, plasticizers, stabilizers, inorganic fillers, antistatic agents, pigments, etc., as long as the effects of the present invention are not impaired. What mixed these various additives can also be used.

(B) Curing agent The thermosetting resin composition according to the present invention is not particularly limited, but preferably contains a curing agent. By containing the curing agent, the thermosetting resin contained in the thermosetting resin composition can be reliably cured, so that the insulation between the connection electrodes of the obtained semiconductor device can be ensured.

  The curing agent is not particularly limited, and examples thereof include amine compounds, phenol compounds, acid anhydride compounds, thiol compounds, isocyanate compounds, and the like. These are the types of thermosetting resins used. What is necessary is just to select suitably according to etc.

  For example, when an epoxy resin is used as the thermosetting resin, the curing agent includes good reactivity with the epoxy resin, low dimensional change upon curing, and appropriate physical properties after curing (for example, heat resistance, moisture resistance) Etc.), phenolic compounds are preferably used.

  Although the phenol type compound used for this invention is not specifically limited, Since the physical property after hardening of an electroconductive connection material is excellent, it is preferable that it is bifunctional or more. For example, bisphenol A, tetramethyl bisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, trisphenol, tetrakisphenol, phenol novolacs, cresol novolacs and the like can be mentioned. Of these, phenol novolacs and cresol novolacs are preferably used because of their good melt viscosity and reactivity with epoxy resins and excellent physical properties after curing.

  What is necessary is just to select the compounding quantity of a hardening | curing agent suitably according to the kind and usage-amount of curable resin to be used. For example, when phenol novolacs are used as the curing agent, the blending amount thereof is preferably 5 with respect to the total amount of the components of the thermosetting resin composition in that the thermosetting resin is reliably cured. % By weight or more, more preferably 10% by weight or more. If epoxy resin and unreacted phenol novolac remain, it becomes a factor of ion migration. Therefore, in order not to remain as a residue, it is preferably 50% by weight or less, more preferably 30% by weight or less, and further preferably 25% by weight or less.

You may prescribe | regulate the compounding quantity of a phenol novolak resin by the equivalent ratio with respect to an epoxy resin. For example, the equivalent ratio of phenol novolac resin to epoxy resin is 0.5 to 1.2, preferably 0.6 to 1.1, and more preferably 0.7 to 0.98. By setting the equivalent ratio of the phenol novolac resin to the epoxy resin to 0.5 or more, heat resistance and moisture resistance after curing can be ensured. On the other hand, by setting this equivalent ratio to 1.2 or less, the amount of the epoxy resin after curing and the unreacted residual phenol novolac resin can be reduced, and the ion migration resistance is improved. These curing agents may be used alone or in combination of two or more.

(C) Flux compound Here, it is preferable that the thermosetting resin composition contains a flux compound. The flux compound is a compound that can remove the oxide film on the surface of the metal foil 108a and improve the wettability of the metal foil 108a. Thereby, the connectivity between the opposing connection electrodes can be reduced. By using such a flux compound, the flux cleaning process can be omitted, and thus the manufacturing process can be simplified.

  Examples of the flux compound include compounds containing phenolic hydroxyl groups and carboxyl groups.

  Examples of the phenolic hydroxyl group-containing compound include phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol, 2,4-xylenol, 2,5 xylenol, and m-ethylphenol. 2,3-xylenol, meditol, 3,5-xylenol, p-tertiarybutylphenol, catechol, p-tertiaryamylphenol, resorcinol, p-octylphenol, p-phenylphenol, bisphenol F, bisphenol F, bisphenol AF, Monomers containing phenolic hydroxyl groups such as biphenol, diallyl bisphenol F, diallyl bisphenol A, trisphenol, tetrakisphenol, phenol novolac resin, o-cresol novolac tree , Bisphenol F novolac resin, bisphenol A novolac resins.

  Examples of the carboxyl group-containing compound include aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, aliphatic carboxylic acids, aromatic carboxylic acids, and phenols.

Here, examples of the aliphatic acid anhydride include succinic anhydride, polyadipic acid anhydride, polyazeline acid anhydride and polysebacic acid anhydride.
Alicyclic acid anhydrides include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylhymic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, methylcyclohexene dicarboxylic acid anhydride Thing etc. are mentioned.

  Examples of the aromatic acid anhydride include phthalic anhydride trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic acid anhydride, ethylene glycol bistrimellitate, glycerol tris trimellitate and the like.

Aliphatic carboxylic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, caproic acid pivalate, caprylic acid, lauric acid, myristic acid, palmitic acid, stearic acid, acrylic acid, methacrylic acid, crotonic acid, oleic acid , Fumaric acid, maleic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, sebacic acid, dodecanedioic acid, pimelic acid and the like. Among _{them, HOOC- (CH 2) n -COOH} (n is an integer of 0 to 20) are preferred aliphatic carboxylic acids represented by, for example, adipic acid, sebacic acid, dodecanedioic acid.

Aromatic carboxylic acids include benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, platnic acid, pyromellitic acid, meritic acid, triylic acid, xylylic acid, hemelitto Acid, mesitylene acid, prenylic acid, toluic acid, cinnamic acid, salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxy Benzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3,5 Naphthoic acid derivatives such as 2-dihydroxy-2-naphthoic acid; phenolphthaline; diphenolic acid, etc. It is.

  Among these, a compound that can act as a curing agent for the thermosetting resin of the thermosetting resin composition is preferable. That is, the flux compound used in this embodiment has a function of reducing the oxide film of the metal foil 108a to such an extent that it can be electrically bonded to the conductive member, and has a functional group that binds to the thermosetting resin. (Curing agent having flux activity) is preferable. When the thermosetting resin composition is melted, the curing agent having flux activity reduces the oxide film of the metal foil 108a, improves the wettability of the metal foil 108a, and the gap between the connection electrodes facing the semiconductor chip is increased. Aggregation of the metal foil 108a is promoted, and formation of the joining region 100 is facilitated. On the other hand, after the electrical connection between the semiconductor chips is formed, it functions as a curing agent and can be added to the thermosetting resin to increase the elastic modulus or Tg of the cured thermosetting resin composition. . By using the curing agent having the flux activity as described above, it is not necessary to perform flux cleaning, and the occurrence of ion migration due to the flux component residue can be suppressed.

  The curing agent having flux activity used in the present invention preferably has at least one carboxyl group. The functional group bonded to the curing agent having flux activity can be appropriately selected depending on the type of thermosetting resin used. For example, when the thermosetting resin is an epoxy resin, the curing agent having a flux activity preferably has a carboxyl group and a group that reacts with the epoxy group (for example, a carboxyl group, a hydroxyl group, an amino group, etc.).

  Specifically, the curing agent having flux activity used in the present invention is preferably at least one selected from the group consisting of aliphatic dicarboxylic acids and compounds having a carboxyl group and a phenolic hydroxyl group.

  The aliphatic dicarboxylic acid used in the present invention is not particularly limited as long as it is a compound in which two carboxyl groups are bonded to an aliphatic hydrocarbon. The aliphatic hydrocarbon group may be saturated or unsaturated acyclic, or may be saturated or unsaturated cyclic. When the aliphatic hydrocarbon group is acyclic, it may be linear or branched.

As said aliphatic dicarboxylic acid, the compound represented by following formula (1) is mentioned, for example.
_{HOOC- (CH 2) n -COOH (} 1)
In formula, n is an integer of 1-20, and it is preferable that it is an integer of 3-10. Within this range, the balance among the flux activity, the outgas at the time of bonding, the elastic modulus after curing of the thermosetting resin composition, and the glass transition temperature is good. In particular, by setting n to 3 or more, an increase in the elastic modulus after curing of the thermosetting resin composition can be suppressed, and the adhesiveness to the adherend can be improved. Further, by setting n to 10 or less, it is possible to suppress a decrease in elastic modulus and further improve connection reliability.

Specific examples of the compound represented by the formula (1) include glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, pentadecane. Examples include diacid, octadecanedioic acid, nonadecanedioic acid, and eicosanedioic acid. Among these, adipic acid, suberic acid, sebacic acid and dodencandioic acid are preferable, and sebacic acid is particularly preferable.

  Examples of the compound having a carboxyl group and a phenolic hydroxyl group include salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), and 2,6-dihydroxybenzoic acid. Benzoic acid derivatives such as 3,4-dihydroxybenzoic acid and gallic acid (3,4,5-trihydroxybenzoic acid); 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid Examples thereof include naphthoic acid derivatives such as acids; phenolphthaline; diphenolic acid and the like. Among these, phenolphthaline, gentisic acid, 2,4-dihydroxybenzoic acid, and 2,6-dihydroxybenzoic acid are preferable, and phenolphthaline, gentisic acid, or a combination thereof is particularly preferable.

  In addition, since these compounds all easily absorb moisture and cause voids, it is preferable to dry them before use. In this invention, the hardening | curing agent which has flux activity may be used by 1 type, and may use 2 or more types together.

  The content of the flux compound is preferably 0.1 to 30% by weight, more preferably 1 to 20% by weight, and further preferably 3 to 18% with respect to the total amount of the constituent components of the thermosetting resin composition. % By weight, particularly preferably 5 to 15% by weight. Within this range, the oxide film on the surface of the metal foil can be sufficiently reduced to such an extent that it can be electrically joined, and when the resin component is cured, it can be efficiently added to the resin, and the elastic modulus of the resin or Tg can be increased. Moreover, generation | occurrence | production of the ion migration resulting from an unreacted flux compound can be suppressed.

(D) Film-forming resin In the present invention, when a solid thermosetting resin composition is used, it is preferable to use a film-forming resin in combination. Such a film-forming resin is not particularly limited as long as it is soluble in an organic solvent and has film-forming properties alone. Either a thermoplastic resin or a thermosetting resin can be used, and these can be used in combination.

  Specific film-forming resins include, for example, (meth) acrylic resins, phenoxy resins, polyester resins, polyurethane resins, polyimide resins, polyamideimide resins, siloxane-modified polyimide resins, polybutadiene resins, polypropylene resins, styrene-butadiene- Styrene copolymer, styrene-ethylene-butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer Examples thereof include a polymer, acrylonitrile-butadiene-styrene copolymer, polyvinyl acetate, and nylon. Among these, (meth) acrylic resins, phenoxy resins, polyester resins, polyamide resins and polyimide resins are preferable. Moreover, these film-forming resin components may be used individually by 1 type, or may use 2 or more types together.

  In the present invention, “(meth) acrylic resin” refers to a polymer of (meth) acrylic acid and its derivatives, or a copolymer of (meth) acrylic acid and its derivatives and other monomers. means. Here, “(meth) acrylic acid” or the like means “acrylic acid or methacrylic acid” or the like.

Examples of the (meth) acrylic resin include polyacrylic acid, polymethacrylic acid, polymethyl acrylate, polyethyl acrylate, polybutyl acrylate, polyacrylic acid-2-ethylhexyl and other polyacrylic acid esters, poly Polymethacrylate such as methyl methacrylate, polyethyl methacrylate, polybutyl methacrylate, polyacrylonitrile, polymethacrylonitrile, polyacrylamide, butyl acrylate-ethyl acrylate-acrylonitrile copolymer, acrylonitrile-butadiene copolymer , Acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, acrylonitrile-styrene copolymer, methyl methacrylate-styrene copolymer, methyl methacrylate Acrylonitrile copolymer, methyl methacrylate-α-methylstyrene copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate-methacrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2 -Hydroxyethyl methacrylate-acrylic acid copolymer, butyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate copolymer, butyl acrylate-acrylonitrile-acrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile copolymer And ethyl acrylate-acrylonitrile-N, N-dimethylacrylamide copolymer. Of these, butyl acrylate-ethyl acrylate-acrylonitrile copolymer and ethyl acrylate-acrylonitrile-N, N-dimethylacrylamide are preferable. Moreover, these (meth) acrylic resins may be used alone or in combination of two or more.

  Among such (meth) acrylic resins, from the viewpoint that adhesion to a semiconductor chip and compatibility with components constituting other thermosetting resin compositions can be improved, a nitrile group, an epoxy group A (meth) acrylic resin obtained by copolymerizing a monomer having a functional group such as a hydroxyl group or a carboxyl group is preferred. In such a (meth) acrylic resin, the compounding amount of the monomer having the functional group is not particularly limited, but is 0.1 to 0.1 mol based on 100 mol% of all monomers during the synthesis of the (meth) acrylic resin. It is preferably 50 mol%, more preferably 0.5 to 45 mol%, and particularly preferably 1 to 40 mol%. When the blending amount of the monomer having the functional group is less than the lower limit value, the adhesion tends not to be sufficiently improved. On the other hand, when the upper limit is exceeded, the adhesive force is too strong and the workability is not sufficiently improved. It is in.

  The weight average molecular weight of the (meth) acrylic resin is not particularly limited, but is preferably 100,000 or more, more preferably 150,000 to 1,000,000, and particularly preferably 250,000 to 900,000. When the weight average molecular weight is within the above range, the film forming property can be improved.

  In the present invention, when a phenoxy resin is used as the film-forming resin component, the number average molecular weight is preferably 5000 to 15000, more preferably 6000 to 14000, and particularly preferably 8000 to 12000. By using such a phenoxy resin, the fluidity of the thermosetting resin composition before curing can be suppressed.

Examples of the skeleton of the phenoxy resin include a bisphenol A type, a bisphenol F type, and a biphenyl type, but are not limited to these in the present invention. A phenoxy resin having a saturated water absorption rate of 1% or less is preferable because it can suppress the occurrence of foaming or peeling at high temperatures during bonding or solder mounting. The saturated water absorption rate is obtained by processing a phenoxy resin into a film having a thickness of 25 μm, drying it in a 100 ° C. atmosphere for 1 hour (an absolutely dry state), and further heating the film at a constant temperature and humidity chamber at 40 ° C. and 90% RH The mass change is measured every 24 hours, and the mass at the time when the mass change is saturated can be calculated by the following formula.
Saturated water absorption (%) = {(mass when saturated) − (mass when absolutely dry)} /
(Mass when absolutely dry) x 100

  The polyimide resin used in the present invention is not particularly limited as long as the resin has an imide bond in the repeating unit. For example, diamine and acid dianhydride are reacted, and the obtained polyamic acid is heated and dehydrated and cyclized. Can be obtained.

Examples of the diamine include aromatic diamines such as 3,3′-dimethyl-4,4′diaminodiphenyl, 4,6-dimethyl-m-phenylenediamine and 2,5-dimethyl-p-phenylenediamine, 1,3 -Siloxane diamines such as bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane. These diamines may be used alone or in combination of two or more.
Examples of the acid dianhydride include 3,3,4,4′-biphenyltetracarboxylic acid, pyromellitic dianhydride, 4,4′-oxydiphthalic dianhydride, and the like. These acid dianhydrides may be used alone or in combination of two or more.

  The polyimide resin used in the present invention may be either soluble or insoluble in a solvent, but is easy to varnish when mixed with other components, and is solvent-soluble in terms of excellent handling properties. Those are preferred. In particular, a siloxane-modified polyimide resin is preferably used because it can be dissolved in various organic solvents.

  The polyamide resin used in the present invention is not particularly limited. For example, ring-opening polymerization of cyclic aliphatic lactam such as 6-nylon and 12-nylon, 6,6-nylon, 4,6-nylon, 6,10 -Nylon, 6,12-nylon, etc., a polycondensation of aliphatic diamine and aliphatic dicarboxylic acid, a polycondensation of aromatic diamine and aliphatic dicarboxylic acid, aromatic diamine and aromatic dicarboxylic acid, And those obtained by condensation polymerization of amino acids.

  Although the molecular weight of the polyamide resin used by this invention is not restrict | limited in particular, For example, 5000-100000 are preferable and 8000-50000 are especially preferable. If the molecular weight is below the above range, the moldability is good, but the mechanical strength of the film is weak, and if it is above the above range, the viscosity becomes high, thereby inhibiting the movement of the metal foil, resulting in poor conduction.

  The polyamide resin used in the present invention may be either soluble or insoluble in a solvent, but it is easy to varnish when mixed with other components, and is solvent-soluble in that it is easy to handle. Those are more preferred.

  The polyester resin used in the present invention is not particularly limited, but a divalent acid such as terephthalic acid or a derivative thereof having an ester forming ability is used as an acid component, a glycol having 2 to 10 carbon atoms as a glycol component, other A saturated polyester resin obtained using a divalent alcohol or a derivative thereof having an ester-forming ability.

  Examples of the polyester resin include polyalkylene terephthalate resins such as polyethylene terephthalate resin, polybutylene terephthalate resin, polytrimethylene terephthalate resin, and polyhexamethylene terephthalate resin.

  The polyester resin may be a polyester resin copolymerized with other components as necessary. The component to be copolymerized is not particularly limited, and examples thereof include known acid components, alcohol components, phenol components, derivatives thereof having ester forming ability, polyalkylene glycol components, and the like.

Examples of the copolymerizable acid component include a divalent or higher aromatic carboxylic acid having 8 to 22 carbon atoms, a divalent or higher aliphatic carbon carboxylic acid having 4 to 12 carbons, and a divalent or higher carbon. Number 8 ~
15 alicyclic carboxylic acids and their derivatives having ester-forming ability. Specific examples of the copolymerizable acid component include terephthalic acid, isophthalic acid, naphthalenedicarboxylic acid, bis (p-carbodiphenyl) methaneanthracene dicarboxylic acid, 4-4′-diphenylcarboxylic acid, and 1,2-bis. (Phenoxy) ethane-4,4′-dicarboxylic acid, 5-sodium sulfoisophthalic acid, adipic acid, sebacic acid, azelaic acid, dodecanedioic acid, maleic acid, trimesic acid, trimellitic acid, pyromellitic acid, 1,3 -Cyclohexanedicarboxylic acid, 1,4-cyclohexanedicarboxylic acid and derivatives thereof having the ability to form esters. These can be used alone or in combination of two or more.

  Examples of the copolymerizable alcohol and / or phenol component include dihydric or higher aliphatic alcohols having 2 to 15 carbon atoms, divalent or higher alicyclic alcohols having 6 to 20 carbon atoms, and 6 to 40 carbon atoms. These divalent or higher valent aromatic alcohols or phenols and derivatives thereof having the ability to form esters. Specific examples of the copolymerizable alcohol and / or phenol component include ethylene glycol, propanediol, butanediol, hexanediol, decanediol, neopentylglycol, cyclohexanedimethanol, cyclohexanediol, 2,2′-bis ( 4-hydroxyphenyl) propane, 2,2′-bis (4-hydroxycyclohexyl) propane, hydroquinone, glycerin, pentaerythritol, and the like, derivatives having ester forming ability, and cyclic esters such as ε-caprolactone Can be mentioned.

  Examples of the copolymerizable polyalkylene glycol component include polyethylene glycol, polypropylene glycol, polytetramethylene glycol, random or block copolymers thereof, and alkylene glycols of bisphenol compounds (polyethylene glycol, polypropylene glycol, polytetramethylene). And modified polyoxyalkylene glycols such as adducts such as glycol and random or block copolymers thereof.

(E) Curing accelerator The thermosetting resin composition may further include a curing accelerator. The curing accelerator may be appropriately selected according to the type of the thermosetting resin. For example, an imidazole compound having a melting point of 150 ° C. or higher can be used. When the melting point of the curing accelerator used is 150 ° C. or higher, the metal foil component can move to the connection electrode surface before the curing of the thermosetting resin composition is completed, and the connection between the connection electrodes is good. Can be. Examples of the imidazole compound having a melting point of 150 ° C. or higher include 2-phenylhydroxyimidazole and 2-phenyl-4-methylhydroxyimidazole.

  The blending amount of the curing accelerator may be appropriately selected. For example, when an imidazole compound is used as the curing accelerator, 0.005 to 10% by weight with respect to the total amount of components of the thermosetting resin composition. % Is preferable, and more preferably about 0.01 to 5% by weight. By making the compounding quantity of an imidazole compound 0.005 weight% or more, the function as a hardening accelerator can be exhibited more effectively and the sclerosis | hardenability of a thermosetting resin composition can be improved. Moreover, by setting the blending amount of imidazole to 10% by weight or less, the melt viscosity of the resin at the melting temperature of the metal foil component does not become too high, and a good joining structure is obtained. Moreover, the preservability of the thermosetting resin composition can be further improved. These curing accelerators may be used alone or in combination of two or more.

(F) Silane coupling agent Moreover, the said thermosetting resin composition may further contain a silane coupling agent. By including a silane coupling agent, the adhesiveness of the thermosetting resin composition with respect to a semiconductor chip can be improved. As the silane coupling agent, for example, an epoxy silane coupling agent, an aromatic-containing aminosilane coupling agent and the like can be used. These may be used alone or in combination of two or more. The blending amount of the silane coupling agent may be appropriately selected, but is preferably 0.01 to 5% by weight, more preferably 0.01 to 5% by weight with respect to the total amount of the constituent components of the thermosetting resin composition. %, More preferably 0.05 to 5% by weight, particularly preferably 0.1 to 2% by weight.

  In addition to the above components, various additives may be appropriately blended in the thermosetting resin composition used in this embodiment in order to improve various properties such as resin compatibility, stability, and workability.

These components are mixed in a solvent, and the resulting varnish is applied onto a base material that has been subjected to a release treatment such as a polyester sheet, and dried at a predetermined temperature to an extent that does not substantially contain a solvent. A thermosetting resin composition can be obtained. The solvent used is not particularly limited as long as it is inert to the components used, but ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, DIBK (diisobutyl ketone), cyclohexanone, DAA (diacetone alcohol), Aromatic hydrocarbons such as benzene, xylene and toluene, alcohols such as methyl alcohol, ethyl alcohol, isopropyl alcohol and n-butyl alcohol, cellosolves such as methyl cellosolve, ethyl cellosolve, butyl cellosolve, methyl cellosolve acetate and ethyl cellosolve acetate , NMP (N-methyl-2-pyrrolidone), THF (tetrahydrofuran), DMF (dimethylformamide), DBE (dibasic acid ester), EEP (ethyl 3-ethoxypropionate) DMC (dimethyl carbonate), etc. is preferably used. The amount of the solvent used is preferably in the range where the solid content of the components mixed in the solvent is 10 to 60% by weight.

(2) When the resin composition is a thermoplastic resin composition The thermoplastic resin composition is not particularly limited, and examples thereof include a hot melt adhesive or a reactive hot melt adhesive.

(A) Thermoplastic resin The thermoplastic resin according to the thermoplastic resin composition is not particularly limited, and examples thereof include vinyl acetate, polyvinyl alcohol resin, polyvinyl butyral resin, vinyl chloride resin, (meth) acrylic resin, phenoxy resin, Polyester resin, polyimide resin, polyamideimide resin, siloxane-modified polyimide resin, polybutadiene resin, acrylic resin, styrene resin, polyethylene resin, polypropylene resin, polyamide resin, cellulose resin, isobutylene resin, vinyl ether resin, liquid crystal polymer resin, polyphenylene sulfide resin, Polyphenylene ether resin, polyether sulfone resin, polyether imide resin, polyether ether ketone resin, polyurethane resin, styrene-butadiene-styrene copolymer,
Styrene-ethylene-butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer Examples thereof include a polymer and polyvinyl acetate. The thermoplastic resin may be a single polymer or a copolymer of at least two of the above thermoplastic resins.

The softening point of the thermoplastic resin is not particularly limited, but is preferably 10 ° C. or more lower than the melting point of the metal foil constituting the conductive connection material, particularly preferably 20 ° C. or more, and further 30 ° C. or more lower. Is more preferable.
The decomposition temperature of the thermoplastic resin is not particularly limited, but is preferably 10 ° C. or higher, particularly preferably 20 ° C. or higher, more preferably 30 ° C. or higher than the melting point of the metal foil constituting the conductive connecting material. Higher is more preferable.

(B) Flux compound The same thing as what was demonstrated in the said "(3-1) curable resin composition" can be used for a flux compound. The same applies to preferred compounds and blending amounts.

(C) Other additives In addition to the above thermoplastic resin, a silane coupling agent, a plasticizer, a stabilizer, a tackifier, an activator, an antioxidant, and an inorganic material are within the range not impairing the effects of the present invention. You may mix | blend a filler, a filler, an antistatic agent, a pigment, etc.

  Although the thickness of the resin composition which concerns on this invention is not specifically limited, 1 micrometer-300 micrometers are preferable, More preferably, they are 3 micrometers-100 micrometers. Within this range, the gap between the semiconductor chips can be sufficiently filled with the resin composition, and the mechanical adhesive strength after curing or solidification of the resin composition can be ensured. In addition, electrical connection between the opposing connection electrodes can be ensured. The size of the conductive connection material 108 is appropriately adjusted in accordance with the size of the connection surface between the semiconductor chip 10 and the semiconductor chip 20 when used. The size of the conductive connecting material 108 is desirably larger than at least half of the area of the semiconductor chip in consideration of problems such as adhesion.

(2) Second Embodiment Next, a method for manufacturing a semiconductor device according to a second embodiment of the present invention will be described with reference to FIG.

  As shown in FIG. 4A, first, a semiconductor chip 10 having a connection electrode 11 provided on a circuit surface and a semiconductor chip 20 having a connection electrode 21 provided on a circuit surface are prepared. In order to improve electrical connection, the surfaces of the connection electrode 11 and the connection electrode 21 may be previously subjected to treatments such as cleaning, polishing, plating, and surface activation. For example, as shown in FIG. 3A, a UBM (Under Barrier Metal) layer 103 is formed on the surface of the connection electrode 11 and the connection electrode 21 using Ti, Ti / Cu, Cu, Ni, Cr / Ni, or the like. 104 may be formed. The UBM layer may be a single layer or a plurality of layers. The surfaces of the semiconductor chips 10 and 20 may be previously subjected to a surface stabilization treatment for the purpose of protecting the semiconductor element, and a passive film 113 such as a SiN film may be formed. Although not shown, an organic resin protective film such as a polyimide film, a polybenzoxazole film, or a benzocyclobutene film is formed as a layer that relieves stress remaining in the joint between the solder bump and the UBM layer and the connection electrode. Also good.

Next, as shown in FIG. 4B, solder bumps 105 are formed on at least one of the connection electrodes 11 and 21. The solder bump 105 may be formed by a plating method or a solder paste printing method. In FIG. 4A, the solder bump 105 is formed on the connection electrode 21, but may be formed only on the connection electrode 11, and formed on both the connection electrode 11 and the connection electrode 21. May be. The solder bump 105 may be subjected to a reflow process after formation.
The solder component constituting the solder bump 105 is made of tin (Sn), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni), germanium (Ge) and copper (Cu). An alloy containing at least two or more selected from the group consisting of Among these, in consideration of the melting temperature and mechanical properties, an alloy containing Sn such as an Sn—Bi alloy, an Sn—Ag alloy, an Sn—Ag—Cu alloy, and an Sn—In alloy is preferable. The melting point of the solder bump is usually 100 ° C. or higher, preferably 130 ° C. or higher, from the viewpoint of sufficiently securing the fluidity of the resin composition 108b in the conductive connecting material 108. Also, the melting temperature of the solder bumps is usually 250 ° C. or lower, preferably 230 ° C. or lower, in order to prevent thermal deterioration of elements provided on the mounting substrate or semiconductor chip during bonding. The melting point of the solder bump is the endothermic peak temperature when a single solder constituting the solder bump is measured at a temperature rising rate of 10 ° C./min using, for example, DSC.

  The size of the solder bump 105 is preferably 5 μm to 500 μm, more preferably 10 μm to 300 μm, and even more preferably 20 μm to 200 μm, in order to ensure sufficient electrical connection reliability.

Subsequently, as shown in FIG. 4B, a conductive connection material 108 is interposed between the semiconductor chip 10 and the semiconductor chip 20. The conductive connecting material 108 includes a metal foil 108a and a resin composition 108b. Then, the metal foil 108 a melts, moves the resin composition 108 b and aggregates in a self-aligned manner on the surfaces of the connection electrode 11 and the solder bump 105, thereby forming the bonding region 100. By this region bonding 100, the connection electrode surfaces and the solder bumps 105 and the molten metal foil 108a are bonded and the connection electrodes facing each other are electrically connected. At this time, the solder bump 105 may not be melted. However, it is preferable that the solder bump 105 is melted and bonded to the metal foil 108a in terms of electrical connection reliability of the bonding region 100.
On the other hand, the gap between the semiconductor chips is filled with the resin composition 108 b of the conductive connecting material 108 to form the insulating region 101. Thereby, adjacent connection electrodes are electrically insulated.

  There is no restriction | limiting in particular as the said conductive connection material 108, The thing similar to the above-mentioned 1st embodiment can be used.

  Moreover, the heating temperature when forming the joining area | region 100 by heating the said conductive connection material can be performed on the same conditions as above-mentioned 1st embodiment.

  Note that when the heating temperature reaches the melting point of the metal foil 108a, the semiconductor chip 10 and the semiconductor chip 20 may be pressurized so that the distance between the opposing connection electrodes is reduced.

  Subsequently, when the resin composition 108b of the conductive connecting material 108 is a thermosetting resin composition, the thermosetting resin composition is cured by heating to ensure electrical connection strength and mechanical adhesive strength. Thus, the opposing connection electrode 11 and connection electrode 21 are electrically connected, and the gap between the semiconductor chip 10 and the semiconductor chip 20 can be sealed with an insulating resin.

  In this embodiment, the connection electrodes facing each other can be electrically connected in this way, and the gap between the semiconductor chip 10 and the semiconductor chip 20 can be sealed with the resin composition.

  The thickness of the conductive connecting material 108 is not particularly limited, but is preferably 1 μm to 500 μm, more preferably 3 μm to 300 μm. Within this range, the gap between the semiconductor chips can be sufficiently filled with the resin composition, and the mechanical adhesive strength of the resin composition can be ensured.

  A multistage semiconductor device according to an embodiment of the present invention can also be manufactured in the same manner as described above by electrically connecting another semiconductor chip to a semiconductor chip in which a through hole is formed. Note that the scope of the present invention includes semiconductor devices manufactured by these manufacturing methods.

3. Electronic Component Next, an electronic component in which a semiconductor device according to an embodiment of the present invention is mounted on a substrate will be described with reference to FIGS. FIG. 5 is a schematic cross-sectional view of an electronic component on which the semiconductor device 1 according to an embodiment of the present invention is mounted. FIG. 6 is a schematic cross-sectional view of an electronic component on which a multi-stack electronic component 2 according to another embodiment of the present invention is mounted. Note that the reference numerals in the figure correspond to the reference numerals in the description of the semiconductor device 1 and the semiconductor device 2.

  As shown in FIG. 5, the external connection electrode 12 provided on the semiconductor chip 10 and the electrode (not shown) provided on the mounting substrate 109 are electrically connected by a wire 110, and the semiconductor device 1 is It is mounted on a mounting substrate 109. The semiconductor device 1, the mounting substrate 109, and the wires 110 are sealed with a sealing resin 111. A plurality of bump electrodes 112 are provided on the back surface of the mounting substrate 109.

  Similarly in FIG. 6, the external connection electrode 12 provided on the semiconductor chip 10 and the electrode (not shown) provided on the mounting substrate 109 are electrically connected by the wire 110, and the semiconductor device 2. Is mounted on the mounting substrate 109. The semiconductor device 2, the mounting substrate 109, and the wire 110 are sealed with a sealing resin 111. A plurality of bump electrodes 112 are provided on the back surface of the mounting substrate 109.

  In the electronic component of this embodiment, the entire package can be reduced in thickness and size by using the semiconductor device according to the present invention as the semiconductor device mounted on the mounting substrate.

  The electronic component of the present embodiment can cope with higher functionality and downsizing of electronic devices. The electronic component of the present embodiment can be widely used in, for example, a mobile phone, a digital camera, a video camera, a car navigation system, a personal computer, a game machine, a liquid crystal television, a liquid crystal display, an EL display, a printer, and the like.

  According to the present invention, it is possible to obtain a semiconductor device and an electronic component on which semiconductor integrated circuits are mounted at a high density. By using the semiconductor device and the electronic component of the present invention, it is possible to manufacture an electronic component that meets the demand for higher functionality and smaller size.

Claims (1)

A first semiconductor chip having a circuit surface provided with a first connection electrode through a conductive connection material having a laminated structure composed of a resin composition and a metal foil selected from solder foil or tin foil; A method of electrically connecting a second semiconductor chip having a circuit surface provided with a second connection electrode electrically connected to the first connection electrode,
An arrangement step of disposing the conductive connection material between the circuit surface of the first semiconductor chip and the circuit surface of the second semiconductor chip facing each other;
A heating step of heating the conductive connection material at a temperature equal to or higher than the melting point of the metal foil selected from the solder foil or tin foil;
A method for manufacturing a semiconductor device, comprising: a curing step for curing or solidifying the resin composition, and a solidification step.

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