KR102505679B1 - 플라즈마 처리 방법 - Google Patents

플라즈마 처리 방법 Download PDF

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KR102505679B1
KR102505679B1 KR1020180059824A KR20180059824A KR102505679B1 KR 102505679 B1 KR102505679 B1 KR 102505679B1 KR 1020180059824 A KR1020180059824 A KR 1020180059824A KR 20180059824 A KR20180059824 A KR 20180059824A KR 102505679 B1 KR102505679 B1 KR 102505679B1
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South Korea
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heaters
plasma treatment
applying
power supply
high frequency
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Korean (ko)
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KR20180131421A (ko
Inventor
겐고 가네코
준 히로세
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01L21/6831—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020180059824A 2017-05-30 2018-05-25 플라즈마 처리 방법 Active KR102505679B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017106733A JP6688763B2 (ja) 2017-05-30 2017-05-30 プラズマ処理方法
JPJP-P-2017-106733 2017-05-30

Publications (2)

Publication Number Publication Date
KR20180131421A KR20180131421A (ko) 2018-12-10
KR102505679B1 true KR102505679B1 (ko) 2023-03-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180059824A Active KR102505679B1 (ko) 2017-05-30 2018-05-25 플라즈마 처리 방법

Country Status (5)

Country Link
US (1) US10361089B2 (https=)
JP (1) JP6688763B2 (https=)
KR (1) KR102505679B1 (https=)
CN (2) CN111653466B (https=)
TW (1) TWI751340B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10541137B2 (en) * 2018-06-01 2020-01-21 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for non line-of-sight doping
JP7539236B2 (ja) * 2020-02-21 2024-08-23 東京エレクトロン株式会社 基板処理装置
US12572807B2 (en) * 2020-06-05 2026-03-10 PassiveLogic, Inc. Neural network methods for defining system topology
TW202226897A (zh) * 2020-11-06 2022-07-01 日商東京威力科創股份有限公司 濾波器電路
US20230011261A1 (en) * 2021-07-09 2023-01-12 Applied Materials, Inc. Multi-zone heater with minimum rf loss
US12293933B2 (en) * 2021-12-15 2025-05-06 Vm Inc. Electrostatic chuck with multiple heater zones
JP7509997B2 (ja) * 2022-03-14 2024-07-02 株式会社日立ハイテク プラズマ処理装置
KR102853945B1 (ko) * 2022-08-12 2025-09-01 세메스 주식회사 척 온도 제어 유닛 및 이를 포함하는 기판 처리 장치
JP2024100608A (ja) * 2023-01-16 2024-07-26 株式会社Kokusai Electric 温度制御方法、半導体装置の製造方法、温度制御システム、基板処理装置、及び、プログラム
CN119381236A (zh) * 2024-10-29 2025-01-28 北京北方华创微电子装备有限公司 下电极组件及半导体工艺腔室

Citations (3)

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US20140154819A1 (en) 2012-11-30 2014-06-05 Lam Research Corporation Power switching system for esc with array of thermal control elements
US20150132863A1 (en) 2012-01-13 2015-05-14 Tokyo Electron Limited Plasma processing apparatus and heater temperature control method
JP2016189425A (ja) 2015-03-30 2016-11-04 日本特殊陶業株式会社 セラミックヒータ及びその制御方法、並びに、静電チャック及びその制御方法

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US6847014B1 (en) * 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
JP4616605B2 (ja) * 2004-09-27 2011-01-19 東京エレクトロン株式会社 プラズマ処理方法、プラズマ処理装置及び記憶媒体
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP5128421B2 (ja) * 2008-09-04 2013-01-23 東京エレクトロン株式会社 プラズマ処理方法およびレジストパターンの改質方法
JP5657262B2 (ja) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
US8637794B2 (en) * 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
JP5674375B2 (ja) * 2010-08-03 2015-02-25 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN103283013B (zh) * 2010-12-27 2016-08-10 创意科技股份有限公司 工件加热装置及工件处理装置
KR102137617B1 (ko) * 2012-10-19 2020-07-24 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP6276919B2 (ja) * 2013-02-01 2018-02-07 株式会社日立ハイテクノロジーズ プラズマ処理装置および試料台
US11158526B2 (en) * 2014-02-07 2021-10-26 Applied Materials, Inc. Temperature controlled substrate support assembly
JP6284786B2 (ja) * 2014-02-27 2018-02-28 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法
US9543171B2 (en) 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
JP6325424B2 (ja) * 2014-11-21 2018-05-16 日本特殊陶業株式会社 静電チャック
JP6541439B2 (ja) * 2015-05-29 2019-07-10 東京エレクトロン株式会社 エッチング方法

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US20150132863A1 (en) 2012-01-13 2015-05-14 Tokyo Electron Limited Plasma processing apparatus and heater temperature control method
US20140154819A1 (en) 2012-11-30 2014-06-05 Lam Research Corporation Power switching system for esc with array of thermal control elements
JP2016189425A (ja) 2015-03-30 2016-11-04 日本特殊陶業株式会社 セラミックヒータ及びその制御方法、並びに、静電チャック及びその制御方法

Also Published As

Publication number Publication date
KR20180131421A (ko) 2018-12-10
TW201907478A (zh) 2019-02-16
CN108987231A (zh) 2018-12-11
TWI751340B (zh) 2022-01-01
US20180350569A1 (en) 2018-12-06
CN111653466A (zh) 2020-09-11
JP2018206805A (ja) 2018-12-27
CN111653466B (zh) 2023-11-28
US10361089B2 (en) 2019-07-23
JP6688763B2 (ja) 2020-04-28
CN108987231B (zh) 2020-06-26

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