CN111653466B - 等离子体处理方法 - Google Patents

等离子体处理方法 Download PDF

Info

Publication number
CN111653466B
CN111653466B CN202010467289.3A CN202010467289A CN111653466B CN 111653466 B CN111653466 B CN 111653466B CN 202010467289 A CN202010467289 A CN 202010467289A CN 111653466 B CN111653466 B CN 111653466B
Authority
CN
China
Prior art keywords
power supply
heaters
plasma processing
high frequency
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010467289.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN111653466A (zh
Inventor
金子健吾
广濑润
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN202010467289.3A priority Critical patent/CN111653466B/zh
Publication of CN111653466A publication Critical patent/CN111653466A/zh
Application granted granted Critical
Publication of CN111653466B publication Critical patent/CN111653466B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
CN202010467289.3A 2017-05-30 2018-05-30 等离子体处理方法 Active CN111653466B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010467289.3A CN111653466B (zh) 2017-05-30 2018-05-30 等离子体处理方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017106733A JP6688763B2 (ja) 2017-05-30 2017-05-30 プラズマ処理方法
JP2017-106733 2017-05-30
CN201810539508.7A CN108987231B (zh) 2017-05-30 2018-05-30 等离子体处理方法
CN202010467289.3A CN111653466B (zh) 2017-05-30 2018-05-30 等离子体处理方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201810539508.7A Division CN108987231B (zh) 2017-05-30 2018-05-30 等离子体处理方法

Publications (2)

Publication Number Publication Date
CN111653466A CN111653466A (zh) 2020-09-11
CN111653466B true CN111653466B (zh) 2023-11-28

Family

ID=64459936

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202010467289.3A Active CN111653466B (zh) 2017-05-30 2018-05-30 等离子体处理方法
CN201810539508.7A Active CN108987231B (zh) 2017-05-30 2018-05-30 等离子体处理方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201810539508.7A Active CN108987231B (zh) 2017-05-30 2018-05-30 等离子体处理方法

Country Status (5)

Country Link
US (1) US10361089B2 (https=)
JP (1) JP6688763B2 (https=)
KR (1) KR102505679B1 (https=)
CN (2) CN111653466B (https=)
TW (1) TWI751340B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10541137B2 (en) * 2018-06-01 2020-01-21 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for non line-of-sight doping
JP7539236B2 (ja) * 2020-02-21 2024-08-23 東京エレクトロン株式会社 基板処理装置
US12572807B2 (en) * 2020-06-05 2026-03-10 PassiveLogic, Inc. Neural network methods for defining system topology
TW202226897A (zh) * 2020-11-06 2022-07-01 日商東京威力科創股份有限公司 濾波器電路
US20230011261A1 (en) * 2021-07-09 2023-01-12 Applied Materials, Inc. Multi-zone heater with minimum rf loss
US12293933B2 (en) * 2021-12-15 2025-05-06 Vm Inc. Electrostatic chuck with multiple heater zones
KR102794111B1 (ko) * 2022-03-14 2025-04-14 주식회사 히타치하이테크 플라스마 처리 장치
KR102853945B1 (ko) * 2022-08-12 2025-09-01 세메스 주식회사 척 온도 제어 유닛 및 이를 포함하는 기판 처리 장치
JP2024100608A (ja) * 2023-01-16 2024-07-26 株式会社Kokusai Electric 温度制御方法、半導体装置の製造方法、温度制御システム、基板処理装置、及び、プログラム
CN119381236A (zh) * 2024-10-29 2025-01-28 北京北方华创微电子装备有限公司 下电极组件及半导体工艺腔室

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6847014B1 (en) * 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
JP2006093558A (ja) * 2004-09-27 2006-04-06 Tokyo Electron Ltd プラズマ処理方法、プラズマ処理装置及び記憶媒体
CN101847558A (zh) * 2009-03-27 2010-09-29 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN102347230A (zh) * 2010-08-03 2012-02-08 东京毅力科创株式会社 等离子体处理方法以及等离子体处理装置
CN104882360A (zh) * 2014-02-27 2015-09-02 东京毅力科创株式会社 等离子体处理装置的清洁方法
JP2016100473A (ja) * 2014-11-21 2016-05-30 日本特殊陶業株式会社 静電チャック
JP2016189425A (ja) * 2015-03-30 2016-11-04 日本特殊陶業株式会社 セラミックヒータ及びその制御方法、並びに、静電チャック及びその制御方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP5128421B2 (ja) * 2008-09-04 2013-01-23 東京エレクトロン株式会社 プラズマ処理方法およびレジストパターンの改質方法
US8637794B2 (en) * 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
JP6021006B2 (ja) * 2010-12-27 2016-11-02 株式会社クリエイティブテクノロジー ワーク加熱装置及びワーク処理装置
JP5973731B2 (ja) * 2012-01-13 2016-08-23 東京エレクトロン株式会社 プラズマ処理装置及びヒータの温度制御方法
KR102137617B1 (ko) * 2012-10-19 2020-07-24 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
US10049948B2 (en) * 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
JP6276919B2 (ja) * 2013-02-01 2018-02-07 株式会社日立ハイテクノロジーズ プラズマ処理装置および試料台
US11158526B2 (en) * 2014-02-07 2021-10-26 Applied Materials, Inc. Temperature controlled substrate support assembly
US9543171B2 (en) 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
JP6541439B2 (ja) * 2015-05-29 2019-07-10 東京エレクトロン株式会社 エッチング方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6847014B1 (en) * 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
JP2006093558A (ja) * 2004-09-27 2006-04-06 Tokyo Electron Ltd プラズマ処理方法、プラズマ処理装置及び記憶媒体
CN101847558A (zh) * 2009-03-27 2010-09-29 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN102347230A (zh) * 2010-08-03 2012-02-08 东京毅力科创株式会社 等离子体处理方法以及等离子体处理装置
CN104882360A (zh) * 2014-02-27 2015-09-02 东京毅力科创株式会社 等离子体处理装置的清洁方法
JP2016100473A (ja) * 2014-11-21 2016-05-30 日本特殊陶業株式会社 静電チャック
JP2016189425A (ja) * 2015-03-30 2016-11-04 日本特殊陶業株式会社 セラミックヒータ及びその制御方法、並びに、静電チャック及びその制御方法

Also Published As

Publication number Publication date
TWI751340B (zh) 2022-01-01
US20180350569A1 (en) 2018-12-06
CN108987231A (zh) 2018-12-11
JP6688763B2 (ja) 2020-04-28
US10361089B2 (en) 2019-07-23
CN108987231B (zh) 2020-06-26
KR102505679B1 (ko) 2023-03-02
CN111653466A (zh) 2020-09-11
KR20180131421A (ko) 2018-12-10
JP2018206805A (ja) 2018-12-27
TW201907478A (zh) 2019-02-16

Similar Documents

Publication Publication Date Title
CN111653466B (zh) 等离子体处理方法
CN112331549B (zh) 载置台和等离子体处理装置
KR100728312B1 (ko) 정전 흡착장치와 웨이퍼 처리장치 및 플라즈마 처리방법
US10896832B2 (en) Substrate processing method and substrate processing apparatus
TWI772200B (zh) 溫度控制裝置及溫度控制方法
CN111430207A (zh) 等离子体处理方法和等离子体处理装置
KR102854008B1 (ko) 플라즈마 처리 장치 및 측정 방법
JP2013145806A (ja) プラズマ処理装置及びヒータの温度制御方法
JP2021132190A (ja) 基板処理装置および載置台
TW202141681A (zh) 載置台及基板處理裝置
JP7761728B2 (ja) プラズマ処理装置
JP7610761B1 (ja) プラズマ処理装置
JPH03136231A (ja) 熱処理方法および熱処理装置、ならびに加熱体の制御方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant