KR102481733B1 - 하전-입자 멀티-빔렛 리소그래피 시스템을 이용한 고유한 칩들의 제작 - Google Patents

하전-입자 멀티-빔렛 리소그래피 시스템을 이용한 고유한 칩들의 제작 Download PDF

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KR102481733B1
KR102481733B1 KR1020197009843A KR20197009843A KR102481733B1 KR 102481733 B1 KR102481733 B1 KR 102481733B1 KR 1020197009843 A KR1020197009843 A KR 1020197009843A KR 20197009843 A KR20197009843 A KR 20197009843A KR 102481733 B1 KR102481733 B1 KR 102481733B1
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South Korea
Prior art keywords
data
structures
design layout
wafer
electronic devices
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KR1020197009843A
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English (en)
Korean (ko)
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KR20190046963A (ko
Inventor
마르셀 니콜라스 야코부스 반 커빈크
빈센트 실베스터 카이퍼
마르코 장-자코 빌란트
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에이에스엠엘 네델란즈 비.브이.
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Priority claimed from US15/389,581 external-priority patent/US10079206B2/en
Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Priority to KR1020227045107A priority Critical patent/KR102583607B1/ko
Priority claimed from PCT/JP2017/033371 external-priority patent/WO2018047985A1/en
Publication of KR20190046963A publication Critical patent/KR20190046963A/ko
Application granted granted Critical
Publication of KR102481733B1 publication Critical patent/KR102481733B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/392—Floor-planning or layout, e.g. partitioning or placement
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/394—Routing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31762—Computer and memory organisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Architecture (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
KR1020197009843A 2016-09-08 2017-09-08 하전-입자 멀티-빔렛 리소그래피 시스템을 이용한 고유한 칩들의 제작 KR102481733B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227045107A KR102583607B1 (ko) 2016-09-08 2017-09-08 하전-입자 멀티-빔렛 리소그래피 시스템을 이용한 고유한 칩들의 제작

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US201662385049P 2016-09-08 2016-09-08
US62/385,049 2016-09-08
US201662413470P 2016-10-27 2016-10-27
US62/413,470 2016-10-27
US15/389,581 2016-12-23
US15/389,581 US10079206B2 (en) 2016-10-27 2016-12-23 Fabricating unique chips using a charged particle multi-beamlet lithography system
US201762458071P 2017-02-13 2017-02-13
US62/458,071 2017-02-13
PCT/JP2017/033371 WO2018047985A1 (en) 2016-09-08 2017-09-08 Fabricating unique chips using a charged particle multi-beamlet lithography system

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020227045107A Division KR102583607B1 (ko) 2016-09-08 2017-09-08 하전-입자 멀티-빔렛 리소그래피 시스템을 이용한 고유한 칩들의 제작

Publications (2)

Publication Number Publication Date
KR20190046963A KR20190046963A (ko) 2019-05-07
KR102481733B1 true KR102481733B1 (ko) 2022-12-29

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KR1020197009843A KR102481733B1 (ko) 2016-09-08 2017-09-08 하전-입자 멀티-빔렛 리소그래피 시스템을 이용한 고유한 칩들의 제작

Country Status (4)

Country Link
EP (1) EP3563199A4 (zh)
JP (1) JP7221198B2 (zh)
KR (1) KR102481733B1 (zh)
CN (1) CN109923479B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022252707A1 (zh) * 2022-02-24 2022-12-08 袁元 半导体器件的加工控制方法、装置及高能粒子束光刻设备
WO2024077586A1 (zh) * 2022-10-14 2024-04-18 袁元 半导体器件的加工控制方法及高能粒子束光刻设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011107603A1 (en) 2010-03-05 2011-09-09 Micronic Mydata AB Method for merging multiple geometrical pixel images and generating a single modulator pixel image
US20150278429A1 (en) 2014-04-01 2015-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. System and Method for Integrated Circuit Manufacturing

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JPH06148867A (ja) * 1992-11-04 1994-05-27 New Japan Radio Co Ltd フォトマスクパターンの決定方法
JPH08139208A (ja) * 1994-11-04 1996-05-31 Toyota Motor Corp 不揮発性メモリの製造システム及びその製造方法
JP3469422B2 (ja) * 1996-02-23 2003-11-25 株式会社東芝 荷電ビーム描画方法及び描画装置
US6433347B1 (en) * 1998-06-19 2002-08-13 Nikon Corporation Charged-particle-beam projection-exposure methods and apparatus that selectively expose desired exposure units of a reticle pattern
JP2001109128A (ja) * 1999-10-12 2001-04-20 Hitachi Ltd リソグラフィ用パターンデータ生成方法、それを用いた半導体装置の製造方法及び半導体製造装置
SE522531C2 (sv) * 1999-11-24 2004-02-17 Micronic Laser Systems Ab Metod och anordning för märkning av halvledare
JP2001337439A (ja) * 2000-05-26 2001-12-07 Hitachi Ltd 半導体集積回路の設計、製造方法および検査方法並びに半導体集積回路
JP4182515B2 (ja) * 2003-05-08 2008-11-19 株式会社オーク製作所 パターン描画装置
WO2010134018A2 (en) * 2009-05-20 2010-11-25 Mapper Lithography Ip B.V. Pattern data conversion for lithography system
KR101636523B1 (ko) * 2009-05-20 2016-07-06 마퍼 리쏘그라피 아이피 비.브이. 듀얼 패스 스캐닝
KR101725299B1 (ko) * 2010-10-26 2017-04-10 마퍼 리쏘그라피 아이피 비.브이. 변조 디바이스 및 이를 사용하는 하전 입자 멀티-빔렛 리소그래피 시스템
US8884255B2 (en) * 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
US20140129997A1 (en) * 2012-11-08 2014-05-08 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011107603A1 (en) 2010-03-05 2011-09-09 Micronic Mydata AB Method for merging multiple geometrical pixel images and generating a single modulator pixel image
US20150278429A1 (en) 2014-04-01 2015-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. System and Method for Integrated Circuit Manufacturing

Also Published As

Publication number Publication date
JP2019532502A (ja) 2019-11-07
EP3563199A4 (en) 2020-08-19
EP3563199A1 (en) 2019-11-06
KR20190046963A (ko) 2019-05-07
CN109923479B (zh) 2021-11-30
CN109923479A (zh) 2019-06-21
JP7221198B2 (ja) 2023-02-13

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