KR102473734B1 - Semiconductor device and detective sensor including the same - Google Patents

Abstract

An embodiment, a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the first semiconductor layer; an absorption layer disposed between the first semiconductor layer and the second semiconductor layer; a third semiconductor layer disposed between the substrate and the first semiconductor layer; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the first semiconductor layer; a third electrode electrically connected to the second semiconductor layer; and a fourth electrode electrically connected to the third semiconductor layer, wherein the third semiconductor layer and the fourth electrode are schottky bonded to a semiconductor device and a sensor package including the same.

Description

Semiconductor device and sensor package including the same {SEMICONDUCTOR DEVICE AND DETECTIVE SENSOR INCLUDING THE SAME}

The embodiment relates to a semiconductor device and a sensor package including the same.

In general, a microbial sensing device may analyze the presence or absence and amount of microorganisms through fluorescence generated by microorganisms present in an object by irradiating an object with ultraviolet rays. The object may be formed of various types including fluids such as beverages, drinking water, and air, or containers such as tableware. And the microorganisms may be biological particles including fungi, germs, bacteria, and the like.

The microorganism detection device may include a light emitting element for irradiating ultraviolet light and a light receiving element for detecting a fluorescence spectrum emitted by microorganisms. Also, a monitoring PD for additionally sensing the light output of the light emitting device may be disposed.

In general, a light emitting device and a monitoring PD are manufactured as a package, and a light receiving device may be manufactured as a separate package. Therefore, there is a problem in that the sensing area is relatively reduced because the volume increases and the distance between the light emitting element and the light receiving element increases.

The embodiment provides a semiconductor device in which a light receiving device and a monitoring PD are integrated.

The embodiment provides a sensor package in which a distance between a light emitting element and a light receiving element is reduced.

A semiconductor device according to an embodiment of the present invention includes a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the first semiconductor layer; an absorption layer disposed between the first semiconductor layer and the second semiconductor layer; a third semiconductor layer disposed between the substrate and the first semiconductor layer; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the first semiconductor layer; a third electrode electrically connected to the second semiconductor layer; and a fourth electrode electrically connected to the third semiconductor layer, wherein the third semiconductor layer and the fourth electrode are Schottky junctioned.
The third semiconductor layer absorbs the first light incident on the substrate, the absorption layer absorbs the second light incident on the substrate, the peak wavelength of the first light is shorter than the peak wavelength of the second light, The first light and the second light may be light in an ultraviolet wavelength range.
The first semiconductor layer includes a 1-1 semiconductor layer disposed on the third semiconductor layer and a 1-2 semiconductor layer disposed on the 1-1 semiconductor layer, and the first electrode comprises the disposed on the 1-2 semiconductor layer, the second electrode is disposed on the 1-1 semiconductor layer, the 1-1 semiconductor layer, the 1-2 semiconductor layer, and the third semiconductor layer are aluminum Including, the aluminum composition may satisfy the following relational expression 1.
[Relationship 1]
3rd semiconductor layer > 1-1st semiconductor layer > 1-2nd semiconductor layer
The first semiconductor layer may include 1-3 semiconductor layers disposed on the 1-2 semiconductor layers, and the 1-3 semiconductor layers, the absorption layer, and the second semiconductor layer may not contain aluminum. .
A sensor package according to an embodiment of the present invention includes a body; a light emitting element disposed within the body; and a light-receiving element disposed within the body, wherein the light-receiving element comprises: a light-transmitting substrate; a first semiconductor layer disposed on the light-transmitting substrate; A second semiconductor layer disposed on the first semiconductor layer; An absorption layer disposed between the first semiconductor layer and the second semiconductor layer; a third semiconductor layer disposed between the light-transmitting substrate and the first semiconductor layer; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the first semiconductor layer; a third electrode electrically connected to the second semiconductor layer; and a fourth electrode electrically connected to the third semiconductor layer, wherein the third semiconductor layer and the fourth electrode are Schottky bonded, and the third semiconductor layer absorbs the first light emitted from the light emitting device. The absorption layer absorbs second light incident from the outside, the peak wavelength of the first light is shorter than the peak wavelength of the second light, and the second light is a target material that absorbs and emits the first light. 2 The spectrum of light is detected, and the target material includes fungi, bacteria, or microorganisms.

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According to the embodiment, a semiconductor device in which a light receiving device and a monitoring PD are integrated may be manufactured. Therefore, the sensor package can be miniaturized.

In addition, a sensing area may be increased by reducing a distance between the light emitting element and the light receiving element.

Various advantageous advantages and effects of the present invention are not limited to the above description, and will be more easily understood in the process of describing specific embodiments of the present invention.

1 is a conceptual diagram of a sensor package according to an embodiment of the present invention;
2 is a conceptual diagram of a conventional sensor package;
3 is a diagram showing a sensing area of a sensor package according to an embodiment of the present invention;
4 is a view showing a sensing area of a conventional sensor package;
5 is a conceptual diagram of a light emitting device;
6 is a conceptual diagram of a light receiving device according to an embodiment of the present invention;
7 is an absorption spectrum of a light receiving device according to an embodiment of the present invention,
8 is a conceptual diagram of a light receiving device according to another embodiment of the present invention;
9 is a plan view of a light receiving device according to another embodiment of the present invention;
10 is a conceptual diagram of a light receiving device according to another embodiment of the present invention;
11 is a conceptual diagram illustrating an electronic product according to an embodiment.

The present embodiments may be modified in other forms or combined with each other, and the scope of the present invention is not limited to each of the embodiments described below.

Even if a matter described in a specific embodiment is not described in another embodiment, it may be understood as a description related to another embodiment, unless there is a description contrary to or contradictory to the matter in another embodiment.

For example, if the characteristics of component A are described in a specific embodiment and the characteristics of component B are described in another embodiment, the opposite or contradictory description even if the embodiment in which components A and B are combined is not explicitly described. Unless there is, it should be understood as belonging to the scope of the present invention.

In the description of the embodiment, in the case where an element is described as being formed “on or under” of another element, on or under (on or under) or under) includes both elements formed by directly contacting each other or by indirectly placing one or more other elements between the two elements. In addition, when expressed as "on or under", it may include the meaning of not only the upward direction but also the downward direction based on one element.

Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention.

Hereinafter, the semiconductor element is described as a light-receiving element that absorbs light in an ultraviolet wavelength range, but is not necessarily limited thereto.

1 is a conceptual diagram of a sensor package according to an embodiment of the present invention, FIG. 2 is a conceptual diagram of a conventional sensor package, FIG. 3 is a view showing a sensing area of the sensor package according to an embodiment of the present invention, and FIG. is a diagram showing a sensing area of a conventional sensor package.

Referring to FIG. 1 , the sensor package according to the embodiment may include a light emitting device 100 and a light receiving device 200 disposed in a body 61 .

The material of the body 61 is not particularly limited, but may be made of a material with excellent heat dissipation. In addition, it may be made of an insulating material to improve electromagnetic interference (EMI). Illustratively, the body 61 may be aluminum oxide, AlN, or ceramic, but is not necessarily limited thereto.

In addition, the body 61 may be made of a metal material having high heat transfer efficiency, and a separate insulation treatment may be applied to the outer surface. Illustratively, the body 61 may be made of aluminum having high ultraviolet reflectance, and an aluminum oxide layer may be formed by oxidizing the outer surface. However, it is not necessarily limited to this, and a separate insulating coating may be applied to the outer surface of the aluminum body 61.

The light emitting device 100 and the light receiving device 200 may be disposed inside the body 61 . Although not shown, a lead frame electrically connected to the light emitting element 100 and the light receiving element 200 may be disposed inside the body 61 .

Various microorganisms (1) may exist in the outdoor air. Microorganisms 1 may be biological particles including fungi, germs, bacteria, and the like. That is, the microorganisms 1 can be distinguished from non-living particles such as dust. Microorganisms 1 may emit characteristic fluorescence when absorbing strong energy.

The microorganism 1 may absorb light (hereinafter referred to as first light) in an ultraviolet wavelength range generated from the light emitting device 100 and emit fluorescence (hereinafter referred to as second light). In this case, the second light L2 emitted by the microorganism 1 may have a longer wavelength than the wavelength of the absorbed first light L1. For example, in the case of tryptophan, a fluorescence spectrum of about 350 nm may be emitted by absorbing light of about 280 nm. Tryptophan is a type of amino acid that makes up proteins.

The light emitting device 100 may output first light L1 in the ultraviolet wavelength range. The light emitting device 100 may output light (UV-A) in a near-ultraviolet wavelength range, may output light (UV-B) in a far-ultraviolet wavelength range, or emit light (UV-C) in a deep ultraviolet wavelength range. can do.

The UV wavelength band may be determined by the Al composition ratio of the light emitting device. Illustratively, the light (UV-A) in the near ultraviolet wavelength range may have a wavelength ranging from 320 nm to 420 nm, and the light (UV-B) in the far ultraviolet wavelength range may have a wavelength ranging from 280 nm to 320 nm. The light (UV-C) of the wavelength range may have a wavelength ranging from 100 nm to 280 nm. The light emitting device 100 according to the present embodiment can output light in a deep ultraviolet wavelength range that can be absorbed by the microorganism 1, but the wavelength range of the light emitting device 100 is adjusted according to the type of the target microorganism 1. It can be.

The light receiving device 200 may detect the second light L2 emitted by the microorganism 1 . Since each microorganism 1 has a different fluorescence spectrum, the type and concentration of the microorganism 1 can be known by examining the fluorescence spectrum emitted by the microorganism 1. In addition, the light receiving device 200 may partially absorb the first light L1 emitted from the light emitting device 100 to monitor light output of the light emitting device 100 . That is, the light-receiving element 200 according to the embodiment can simultaneously serve as a monitoring PD.

The light emitting device 100 according to the embodiment may be an ultraviolet light emitting diode, and the light receiving device 200 may be an ultraviolet photo diode.

Referring to FIGS. 2 and 3 , the light emitting element 100 and the monitoring PD 300 may be manufactured as a first package 51 and the light receiving element 200 may be manufactured as a second package 52 . However, when the light emitting device 100 and the light receiving device 200 are manufactured as separate packages, the distance P2 between the light emitting device 100 and the light receiving device 200 may be widened. Accordingly, an overlapping region S2 where the beam angle of the light emitting element 100 and the light receiving angle of the light receiving element 200 intersect may be formed to be relatively narrow. Sensing may be difficult at points other than the overlapping region S2 because they deviate from the light-receiving angle of the light-receiving element 200 .

However, according to the embodiment as shown in FIG. 4 , when the light emitting device 100 and the light receiving device 200 are manufactured in a single package, the gap may be narrowed and the overlapping region S1 may be widened. However, when the light emitting device 100 and the light receiving device 200 are manufactured as a single package, it is difficult to separate the light absorbed by the monitoring PD and the light receiving device 200, making accurate sensing difficult. That is, the first light L1 directly incident from the light emitting element 100 to the light receiving element 200 may act as noise from the perspective of the light receiving element 200 . The light receiving device 200 according to the embodiment may be designed to respectively sense the first light L1 and the second light L2 emitted from the light emitting device 100 . Thus, a single package may be possible.

5 is a conceptual diagram of a light emitting device.

Referring to FIG. 5 , an ultraviolet light emitting device 100 includes a light emitting structure including a first conductivity type semiconductor layer 120, a second conductivity type semiconductor layer 140, and an active layer 130, and a first conductivity type semiconductor layer. It includes a first electrode layer 150 electrically connected to (120) and a second electrode layer 160 electrically connected to the second conductive type semiconductor layer 140.

The first conductivity type semiconductor layer 120 may be implemented with a compound semiconductor such as group III-V or group II-VI, and the first dopant may be doped in the first conductivity type semiconductor layer 120 . The first conductivity-type semiconductor layer 120 is a semiconductor material having a composition formula of In _x1 Al _y1 Ga _{1 -x1- y1} N (0≤x1≤1, 0≤y1≤1, 0≤x1+y1≤1), eg For example, it may be selected from GaN, AlGaN, InGaN, InAlGaN, and the like. Also, the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductivity-type semiconductor layer 120 doped with the first dopant may be an n-type semiconductor layer.

The active layer 130 is a layer where electrons (or holes) injected through the first conductive semiconductor layer 120 and holes (or electrons) injected through the second conductive semiconductor layer 140 meet. The active layer 130 transitions to a lower energy level as electrons and holes recombine, and can generate light having a wavelength corresponding to the transition.

The active layer 130 may have a structure of any one of a single well structure, a multi-well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, and the active layer 130 The structure of is not limited to this. The active layer 130 may generate light in an ultraviolet wavelength range.

The second conductivity type semiconductor layer 140 is formed on the active layer 130 and may be implemented with a compound semiconductor such as group III-V or group II-VI. Dopants may be doped. The second conductive semiconductor layer 140 is a semiconductor material having a composition formula of In _x5 Al _y2 Ga _{1 -x5- y2} N (0≤x5≤1, 0≤y2≤1, 0≤x5+y2≤1) or AlInN. , AlGaAs, GaP, GaAs, GaAsP, may be formed of a material selected from AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductivity-type semiconductor layer 140 doped with the second dopant may be a p-type semiconductor layer.

When the second conductive semiconductor layer 140 is AlGaN, hole injection may not be smooth due to low electrical conductivity. Accordingly, a GaN thin film layer (not shown) having relatively excellent electrical conductivity may be disposed on the upper surface of the second conductive semiconductor layer 140 to form an ohmic contact with the second electrode 292 layer 160 .

The light emitting device 100 may have various bonding forms. For example, the light emitting device 100 may have a horizontal bonding structure, a vertical bonding structure, or a flip chip bonding structure.

6 is a conceptual diagram of a light receiving device according to an embodiment of the present invention, and FIG. 7 is an absorption spectrum of the light receiving device according to an embodiment of the present invention.

Referring to FIG. 6 , the light receiving device 200 according to the embodiment includes a substrate 210, a first semiconductor layer 250, an absorption layer 260, a second semiconductor layer 270, a third semiconductor layer 240, and a plurality of electrodes 291, 292, 293, and 294.

The semiconductor layer is formed by metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), and molecular beam epitaxy (MBE). ), hydride vapor phase epitaxy (HVPE), sputtering, or the like, but is not limited thereto.

The plurality of electrodes include a first electrode 291 electrically connected to the first semiconductor layer 250, a second electrode 292 electrically connected to the first semiconductor layer 250, and a first semiconductor layer 250 and A third electrode 293 electrically connected and a fourth electrode 294 electrically connected to the third semiconductor layer 240 may be included.

The substrate 210 may be formed of a material selected from sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto. The substrate 210 may be a light-transmitting substrate through which light in the ultraviolet wavelength band may pass.

The buffer layer 220 may mitigate lattice mismatch between the substrate 210 and the semiconductor layers. The buffer layer 220 may include a combination of Group III and V elements, or may include any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. In this embodiment, the buffer layer 220 may be AlN, but is not limited thereto. The buffer layer 220 may include a dopant, but is not limited thereto.

The superlattice layer 230 may be disposed on the buffer layer 220 to improve crystallinity. In the superlattice layer 230, first and second layers may be alternately stacked. The first layer may have a higher aluminum composition than the second layer. Illustratively, the first layer may be AlN and the second layer may be AlGaN, but is not necessarily limited thereto.

The first semiconductor layer 250 may be disposed on the substrate 210 . The first semiconductor layer 250 may be implemented with a compound semiconductor such as group III-V or group II-VI, and the first semiconductor layer 250 may be doped with a first dopant. The first semiconductor layer 250 is a semiconductor material having a composition formula of In _x1 Al _y1 Ga _{1 -x1- y1} N (0≤x1≤1, 0≤y1≤1, 0≤x1+y1≤1), for example It may be selected from GaN, AlGaN, InGaN, InAlGaN, and the like. Also, the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first semiconductor layer 250 doped with the first dopant may be an n-type semiconductor layer.

The absorption layer 260 may be disposed between the first semiconductor layer 250 and the second semiconductor layer 270 . The absorption layer 260 may include an intrinsic semiconductor layer. Here, the intrinsic semiconductor layer may be an undoped semiconductor layer or an unintentionally doped semiconductor layer.

The unintentional semiconductor layer may mean that N-vacancy occurs without doping with an n-type dopant such as a silicon (Si) atom during a growth process of the semiconductor layer. At this time, when the N-vacancy increases, the concentration of surplus electrons increases, and even if it is not intended in the manufacturing process, it may have electrical characteristics similar to those doped with an n-type dopant. A dopant may be doped to a portion of the absorption layer 260 by diffusion.

The absorption layer 260 may have a depletion region formed therein to absorb the second light L2 . However, it is not necessarily limited thereto, and the light receiving element 200 may further include an amplification layer (not shown) for multiplying carriers. The amplification layer may adopt various semiconductor layer structures having an avalanche function.

The second semiconductor layer 270 may be disposed on the absorption layer 260 . The second semiconductor layer 270 may be implemented with a compound semiconductor such as group III-V or group II-VI, and the second semiconductor layer 270 may be doped with a second dopant. The second semiconductor layer 270 is a semiconductor material having a composition formula of In _x5 Al _y2 Ga _{1 -x5- y2} N (0≤x5≤1, 0≤y2≤1, 0≤x5+y2≤1), GaN, AlInGaN , AlGaAs, GaP, GaAs, GaAsP, may be formed of a material selected from AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second semiconductor layer 270 doped with the second dopant may be a p-type semiconductor layer.

When the second semiconductor layer 270 is AlGaN, hole injection may not be smooth due to low electrical conductivity. Therefore, a GaN thin film layer (not shown) having relatively excellent electrical conductivity may be disposed on the upper surface of the second semiconductor layer 270 . A third ohmic electrode 293a may be disposed on the second semiconductor layer 270 . The third ohmic electrode 293a may be ITO, but is not necessarily limited thereto.

A third semiconductor layer 240 may be disposed between the substrate 210 and the first semiconductor layer 250 . The third semiconductor layer 240 may absorb the first light L1 emitted from the light emitting device 100 . The third semiconductor layer 240 is a semiconductor material having a composition formula of In _x1 Al _y1 Ga _{1 -x1- y1} N (0≤x1≤1, 0<y1≤1, 0≤x1+y1≤1), for example It may be selected from AlGaN, InAlGaN, AlN, and the like. In addition, an n-type dopant such as Si, Ge, Sn, Se, or Te may be doped.

The aluminum composition of the third semiconductor layer 240 may be 40% to 50%. When the aluminum composition is 40% or more, the problem of absorbing the second light emitted by the microorganism 1 may be improved. If the aluminum composition is lower than 40%, the energy band gap is lowered and the second light can be absorbed. Accordingly, the sensitivity of the second light may decrease.

When the aluminum composition is 50% or less, the problem of not absorbing ultraviolet light of about 270 nm due to an excessively large energy band gap can be improved. When the aluminum composition is greater than 50%, a portion of the first light may pass through the third semiconductor layer 240 and be absorbed by the absorption layer 260 . Therefore, it may act as noise of the second light.

The first electrode 291 may be disposed on the first semiconductor layer 250 . The first electrode 291 may include a first ohmic electrode 291a disposed on the first semiconductor layer 250 and a first pad 291b disposed on the first ohmic electrode 291a.

The second electrode 292 may be disposed on the first semiconductor layer 250 . The second electrode 292 may include a second ohmic electrode 292a disposed on the first semiconductor layer 250 and a first pad 291b disposed on the second ohmic electrode 292a. The second electrode 292 may be spaced apart from the outside of the first electrode 291 .

The third electrode 293 may be disposed on the second semiconductor layer 270 . The third electrode 293 may include a third ohmic electrode 293a disposed on the second semiconductor layer 270 and a third pad 293b disposed on the third ohmic electrode 293a.

The fourth electrode 294 may be disposed on the third semiconductor layer 240 . The fourth electrode 294 may include a Schottky electrode 294a disposed on the third semiconductor layer 240 and a fourth pad 294b disposed on the Schottky electrode 294a.

The insulating layer 280 may electrically insulate the first to fourth electrodes 291 , 292 , 293 , and 294 . The insulating layer 280 may be formed by selecting at least one from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , AlN, and the like, but is not limited thereto. The insulating layer 280 may be formed as a single layer or multiple layers. For example, the insulating layer 280 may be a multi-layer distributed Bragg reflector (DBR) including Si oxide or a Ti compound.

The first to third ohmic electrodes 291a, 292a, and 293a may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), and indium gallium zinc oxide (IGZO). oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In- Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In , Ru, Mg, Zn, Pt, Au, may be formed including at least one of Hf, but is not limited to these materials. For example, the first and second ohmic electrodes 291a and 292a may have a Cr/Ti/Al/Ni/Au electrode structure, and the third ohmic electrode 293a may be ITO, but is not limited thereto.

The Schottky electrode 294a may include nickel (Ni), molybdenum (Mo), titanium nitride (TiN), gold (Au), palladium (Pd), platinum (Pt), or a stacked structure of two or more thereof. However, it is not necessarily limited thereto, and all metal electrodes usable for Schottky bonding may be applied.

The types of the first to fourth pads 291b, 292b, 293b, and 294b are not particularly limited. Various types of pad electrodes capable of wire bonding, flip chip bonding, solder bonding, and the like may be applied to the pad.

The third semiconductor layer 240 may be in Schottky contact with the fourth electrode 294 to monitor the output of the first light L1 emitted from the light emitting device 100 . The absorption layer 260 may absorb the second light L2 to measure the presence and concentration of the microorganism 1 . At this time, since most of the first light L1 is designed to be absorbed by the third semiconductor layer 240 and the first semiconductor layer 250, the absorption layer 260 may substantially absorb only the second light L2.

According to an embodiment, the first semiconductor layer 250, the absorption layer 260, the second semiconductor layer 270, the first electrode 291, and the third electrode 293 may form a PIN diode. In addition, the first semiconductor layer 250, the third semiconductor layer 240, the second electrode 292, and the fourth electrode 294 may form a Schottky diode. A PN diode or PIN diode may be formed instead of the Schottky diode, but in this case, there is a problem in that a separate P semiconductor layer must be provided.

Referring to FIG. 7 , it can be seen that the first light L1 has a peak wavelength P1 at 240 nm to 290 nm, and the second light L2 has a peak wavelength P2 at 320 nm to 380 nm. In this case, the interval W1 between the peak wavelength P1 of the first light L1 and the peak wavelength P2 of the second light L2 may be 60 nm to 100 nm. When the interval W1 between the two layers is narrower than 60 nm, the overlapping area may act as noise, and thus the sensitivity may be lowered.

The peak intensity of the second light L2 may be greater than the peak intensity of the first light L1. When the light emitting devices 100 are positioned adjacent to each other, the peak intensity of the first light L1 may be relatively greater than the peak intensity of the second light L2. However, the first light (L1) can be designed to have a small peak intensity because only an amount of light sufficient to measure the light output of the light emitting device 100 is required. The intensity of the first light L1 can be controlled by reducing the Schottky junction area. Therefore, as will be described later, the Schottky junction area can be designed to be smaller than the area of the absorption layer 260 .

8 is a conceptual diagram of a light receiving element according to another embodiment of the present invention, FIG. 9 is a plan view of a light receiving element according to another embodiment of the present invention, and FIG. 10 is a conceptual diagram of a light receiving element according to another embodiment of the present invention. to be.

Referring to FIG. 8 , the light receiving device 200 according to the embodiment includes a substrate 210, a first semiconductor layer 250, an absorption layer 260, a second semiconductor layer 270, a third semiconductor layer 240, and a plurality of electrodes 291, 292, 293, and 294.

The substrate 210 may be formed of a material selected from sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto. The substrate 210 may be a light-transmitting substrate through which light in the ultraviolet wavelength band may pass.

The buffer layer 220 may mitigate lattice mismatch between the substrate 210 and the semiconductor layers. The buffer layer 220 may include a combination of Group III and V elements, or may include any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. Since this embodiment needs to absorb light in the ultraviolet wavelength range, the buffer layer 220 may be AlN, but is not limited thereto. The buffer layer 220 may include a dopant, but is not limited thereto.

The superlattice layer 230 may be disposed on the buffer layer 220 to improve crystallinity. In the superlattice layer 230, first and second layers may be alternately stacked. The first layer may have a higher aluminum composition than the second layer. Illustratively, the first layer may be AlN and the second layer may be AlGaN, but is not necessarily limited thereto.

The first semiconductor layer 250 may be disposed on the substrate 210 . The first semiconductor layer 250 may include a 1-1 semiconductor layer 251 , a 1-2 semiconductor layer 252 , and a 1-3 semiconductor layer 253 .

The 1-1st semiconductor layer 251 may be implemented with a compound semiconductor such as group III-V or group II-VI, In _x1 Al _y1 Ga _{1 -x1- y1} N (0≤x1≤1, 0<y1 ≤1, 0≤x1+y1≤1) may be selected from semiconductor materials having a composition formula, for example, AlGaN, InAlGaN, AlGaN, and the like.

The 1-1st semiconductor layer 251 may not be doped with the first dopant. That is, the 1-1st semiconductor layer 251 may include an intrinsic semiconductor layer. Here, the intrinsic semiconductor layer may be an undoped semiconductor layer or an unintentionally doped semiconductor layer. According to this configuration, the 1-1 semiconductor layer 251 serves as a high resistance layer and can reduce noise generated between the PIN diode and the Schottky diode.

The aluminum composition of the 1-1st semiconductor layer 251 may be lower than that of the third semiconductor layer 240 . The aluminum composition of the 1-1st semiconductor layer 251 may be 35% to 40%. When the aluminum composition is less than 35%, there is a problem of absorbing the second light L2. In addition, when the aluminum composition is greater than 40%, the crystallinity of the GaN type absorber layer 260 may decrease.

The 1-2 semiconductor layer 252 may be implemented with a compound semiconductor such as group III-V or group II-VI, In _x1 Al _y1 Ga _{1 -x1- y1} N (0≤x1≤1, 0<y1 ≤1, 0≤x1+y1≤1) may be selected from semiconductor materials having a composition formula, for example, AlGaN, InAlGaN, AlGaN, and the like. The first and second semiconductor layers 252 may be doped with n dopant.

The aluminum composition of the 1-2 semiconductor layer 252 may be lower than that of the 1-1 semiconductor layer 251 and the third semiconductor layer 240 . The aluminum composition of the first-second semiconductor layer 252 may be 30% to 35%. When the aluminum composition is less than 30%, there is a problem of absorbing the second light L2. In addition, when the aluminum composition is greater than 35%, the crystallinity of the GaN type absorber layer 260 may decrease.

The 1-3 semiconductor layers 253 may be implemented with compound semiconductors such as group III-V and group II-VI, In _x1 Al _y1 Ga _{1 -x1- y1} N (0≤x1≤1, 0≤y1 ≤1, 0≤x1+y1≤1) may be a semiconductor material having a composition formula, for example, GaN. The first to third semiconductor layers 253 may be doped with n dopant.

The absorption layer 260 may be disposed between the first to third semiconductor layers 253 and the second semiconductor layer 270 . The absorption layer 260 may include an intrinsic semiconductor layer. Here, the intrinsic semiconductor layer may be an undoped semiconductor layer or an unintentionally doped semiconductor layer. For example, the absorption layer 260 may be i-GaN, but is not necessarily limited thereto.

The absorption layer 260 may have a depletion region formed therein to absorb the second light L2 . However, it is not necessarily limited thereto, and the light receiving element 200 may further include an amplification layer for multiplying carriers. The amplification layer may adopt various semiconductor layer structures having an avalanche function.

The second semiconductor layer 270 may be disposed on the absorption layer 260 . The second semiconductor layer 270 may be implemented with a compound semiconductor such as group III-V or group II-VI, and the second semiconductor layer 270 may be doped with a second dopant. The second semiconductor layer 270 may be a semiconductor material having a composition formula of In _x5 Al _y2 Ga _{1 -x5- y2} N (0≤x5≤1, 0≤y2≤1, 0≤x5+y2≤1). For example, the second semiconductor layer 270 may be GaN. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second semiconductor layer 270 doped with the second dopant may be a p-type semiconductor layer.

A third semiconductor layer 240 may be disposed between the substrate 210 and the 1-1 semiconductor layer 251 . The third semiconductor layer 240 is a semiconductor material having a composition formula of In _x1 Al _y1 Ga _{1 -x1- y1} N (0≤x1≤1, 0<y1≤1, 0≤x1+y1≤1), for example It may be selected from AlGaN, InAlGaN, AlN, and the like. In addition, an n-type dopant such as Si, Ge, Sn, Se, or Te may be doped.

The aluminum composition of the third semiconductor layer 240 may be 40% to 50%. When the aluminum composition is 40% or more, the problem of absorbing the second light emitted by the microorganism 1 may be improved. If the aluminum composition is lower than 40%, the energy band gap is lowered and the second light can be absorbed. Accordingly, the sensitivity of the second light may decrease.

When the aluminum composition is 50% or less, the problem of not absorbing ultraviolet light of about 270 nm due to an excessively large energy band gap can be improved. When the aluminum composition is greater than 50%, a portion of the first light may pass through the third semiconductor layer 240 and be absorbed by the absorption layer 260 . Therefore, it may act as noise of the second light.

The crystallinity of the absorption layer 260 may be improved by sequentially reducing the aluminum composition of the third semiconductor layer 240 and the 1-1st to 1-3th semiconductor layers 251 , 252 , and 253 . The 1-1st semiconductor layer 251, the 1-2nd semiconductor layer 252, and the 3rd semiconductor layer 240 may include aluminum, and the aluminum composition may satisfy Relational Equation 1 below.

[Relationship 1]

3rd semiconductor layer 240 > 1-1st semiconductor layer 251 > 1-2nd semiconductor layer 252

The first electrode 291 may be disposed on the first and second semiconductor layers 252 . The first electrode 291 may include a first ohmic electrode 291a disposed on the first and second semiconductor layers 252 and a first pad 291b disposed on the first ohmic electrode 291a. . The first electrode 291 may be disposed in the dummy region 252a in which the first and second semiconductor layers 252 are mesa-etched, but is not limited thereto.

The second electrode 292 may be disposed on the 1-1 semiconductor layer 251 . The second electrode 292 may include a second ohmic electrode 292a disposed on the 1-1 semiconductor layer 251 and a second pad 292b disposed on the second ohmic electrode 292a. .

According to the embodiment, the first electrode 291 is disposed on the 1-2 semiconductor layer 252 having relatively high conductivity, and the second electrode 292 is the 1-1 semiconductor layer having relatively low conductivity ( 251) can be placed on. Accordingly, since the high-resistance layer is disposed between the first electrode 291 and the second electrode 292, sensing sensitivity of the first light L1 and the second light L2 may be improved.

The third electrode 293 may be disposed on the second semiconductor layer 270 . The third electrode 293 may include a third ohmic electrode 293a disposed on the second semiconductor layer 270 and a third pad 293b disposed on the third ohmic electrode 293a.

The fourth electrode 294 may be disposed on the third semiconductor layer 240 . The fourth electrode 294 may include a Schottky electrode 294a disposed on the third semiconductor layer 240 and a fourth pad 294b disposed on the Schottky electrode 294a.

The insulating layer 280 may electrically insulate the first to fourth electrodes 291 , 292 , 293 , and 294 . The insulating layer 280 may be formed by selecting at least one from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , AlN, and the like, but is not limited thereto. The insulating layer 280 may be formed as a single layer or multiple layers. For example, the insulating layer 280 may be a multi-layer distributed Bragg reflector (DBR) including Si oxide or a Ti compound.

The first to third ohmic electrodes 291a, 292a, and 293a may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), and indium gallium zinc oxide (IGZO). oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In- Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In , Ru, Mg, Zn, Pt, Au, may be formed including at least one of Hf, but is not limited to these materials. For example, the first and second ohmic electrodes 291a and 292a may have a Cr/Ti/Al/Ni/Au electrode structure, and the third ohmic electrode 293a may be ITO, but is not limited thereto.

The Schottky electrode 294a may include nickel (Ni), molybdenum (Mo), titanium nitride (TiN), gold (Au), palladium (Pd), platinum (Pt), or a stacked structure of two or more thereof. However, it is not necessarily limited thereto, and all metal electrodes usable for Schottky bonding may be applied.

The light-receiving element 200 according to the embodiment may have a structure in which a GaN-type PIN diode and an AlGaN-type Schottky diode are bonded. Specifically, the third semiconductor layer 240 is Schottky-bonded to the fourth electrode 294 to absorb the first light L1 emitted from the light emitting device 100, thereby monitoring. In addition, the GaN type absorption layer 260 absorbs the second light L2 of about 350 nm, and thus the presence and distribution of microorganisms can be measured. At this time, the first light L1 has a shorter peak wavelength than the second light L2.

Referring to FIG. 9 , the planar absorption layer 260 may be disposed in a circular shape in the central region of the chip, and the first electrode 291 may be formed in a ring shape and disposed to surround the absorption layer 260 . Also, the second electrode 292 may be disposed outside the first electrode 291, and the fourth electrode 294 may be disposed at each corner region of the chip.

The Schottky junction area (the area where the Schottky electrode contacts the third semiconductor layer) may occupy 20% to 40% of the total area of the light emitting structure. When the area is less than 20%, the light output is too low to detect the light output of the light emitting device 100, and when the area is greater than 40%, the area of the absorption layer 260 is reduced so that the sensitivity of the second light L2 is reduced. There is a problem with deterioration. Accordingly, an area of the absorption layer 260 may be larger than a contact area between the fourth electrode 294 and the third semiconductor layer. FIG. 8 may be a cross-sectional view in the A-A direction of FIG. 9 .

The structure of the light receiving element 200 may be variously modified. Referring to FIG. 10 , a Schottky junction may be formed between the 1-1 semiconductor layer 251 and the fourth electrode 294 . Also, the first electrode 291 may be directly disposed on the first and second semiconductor layers 252 .

11 is a conceptual diagram illustrating an electronic product according to an embodiment.

Referring to FIG. 11 , the electronic product according to the embodiment includes a case 20, a sensor package 1000 disposed in the case 20, a functional unit 4000 that performs functions of the product, and a control unit 2000. do.

An electronic product may be a concept including various home appliances and the like. For example, the electronic product may be a home appliance that receives power and performs a predetermined role, such as a refrigerator, air purifier, air conditioner, water purifier, and humidifier.

However, it is not necessarily limited thereto, and electronic products may include products having a predetermined closed space, such as automobiles. That is, electronic products may be a concept that includes all various products that need to check the presence of microorganisms.

The functional unit 4000 may perform a main function of an electronic product. For example, when the electronic component is an air conditioner, the function unit 4000 may be a part that controls the temperature of air. Also, when the electronic component is a water purifier, the function unit 4000 may be a part that purifies water.

The controller 2000 may communicate with the function unit 4000 and the sensor package 1000 . The controller 2000 may operate the sensor package 1000 to detect the presence and type of microorganisms introduced into the case 2 . As described above, since the sensor package 1000 according to the embodiment can be miniaturized in a module form, it can be installed in electronic products of various sizes.

The controller 2000 may compare the signal detected by the sensor package 1000 with previously stored data to detect the concentration and type of microorganisms. The pre-stored data may be stored in a memory in the form of a look-up table and may be periodically updated.

As a result of the detection, the controller 2000 may drive the cleaning system or output a warning signal to the display unit 3000 when the concentration of microorganisms is equal to or greater than a preset reference value.

Although the above has been described with reference to the embodiments, this is only an example and does not limit the present invention, and those skilled in the art to which the present invention belongs will not deviate from the essential characteristics of the present embodiment. It will be appreciated that various variations and applications are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the present invention as defined in the appended claims.

Claims (19)

Board;
a first semiconductor layer disposed on the substrate;
a second semiconductor layer disposed on the first semiconductor layer;
an absorption layer disposed between the first semiconductor layer and the second semiconductor layer and absorbing light;
a third semiconductor layer disposed between the substrate and the first semiconductor layer;
a first electrode electrically connected to the first semiconductor layer;
a second electrode electrically connected to the first semiconductor layer and spaced apart from the first electrode;
a third electrode electrically connected to the second semiconductor layer; and
And a fourth electrode electrically connected to the third semiconductor layer,
The semiconductor device of claim 1, wherein the third semiconductor layer and the fourth electrode are schottky bonded.
According to claim 1,
The third semiconductor layer absorbs first light incident on the substrate;
The absorption layer absorbs second light incident on the substrate;
The peak wavelength of the first light is shorter than the peak wavelength of the second light,
The first light and the second light are light in the ultraviolet wavelength range semiconductor device.
According to claim 1,
The first semiconductor layer is
A 1-1 semiconductor layer disposed on the third semiconductor layer, and
A 1-2 semiconductor layer disposed on the 1-1 semiconductor layer,
The first electrode is disposed on the first-second semiconductor layer,
The second electrode is disposed on the 1-1 semiconductor layer,
The 1-1 semiconductor layer, the 1-2 semiconductor layer, and the third semiconductor layer include aluminum,
The aluminum composition is a semiconductor device that satisfies the following relational expression 1.
[Relationship 1]
3rd semiconductor layer > 1-1st semiconductor layer > 1-2nd semiconductor layer
According to claim 3,
The first semiconductor layer includes 1-3 semiconductor layers disposed on the 1-2 semiconductor layers,
Wherein the first to third semiconductor layers, the absorption layer, and the second semiconductor layer do not contain aluminum.
body;
a light emitting element disposed within the body; and
A light receiving element disposed within the body,
The light receiving element,
light transmitting substrate;
a first semiconductor layer disposed on the light-transmitting substrate;
a second semiconductor layer disposed on the first semiconductor layer;
an absorption layer disposed between the first semiconductor layer and the second semiconductor layer and absorbing light;
a third semiconductor layer disposed between the light-transmitting substrate and the first semiconductor layer;
a first electrode electrically connected to the first semiconductor layer;
a second electrode electrically connected to the first semiconductor layer and spaced apart from the first electrode;
a third electrode electrically connected to the second semiconductor layer; and
And a fourth electrode electrically connected to the third semiconductor layer,
The third semiconductor layer and the fourth electrode are Schottky bonded,
The third semiconductor layer absorbs the first light emitted from the light emitting device,
The absorption layer absorbs second light incident from the outside,
The peak wavelength of the first light is shorter than the peak wavelength of the second light,
The second light is light emitted by a target material absorbing the first light,
The target material is a sensor package containing fungi, bacteria, or microorganisms.
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