KR102649510B1 - Sterillizer and electrical appliances including the same - Google Patents

Abstract

Examples include a substrate; a light emitting device disposed on the substrate; and a light receiving element disposed on the substrate, wherein the light emitting element includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and a light receiving element disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. It includes an active layer, and the light receiving element includes a third conductivity type semiconductor layer, a fourth conductivity type semiconductor layer, and a light absorption layer disposed between the third conductivity type semiconductor layer and the fourth conductivity type semiconductor layer. 3 The conductive semiconductor layer is disposed on the light-receiving side based on the light absorption layer, the active layer, the light absorption layer, and the third conductive semiconductor layer include aluminum, and the aluminum composition of the third conductive semiconductor layer is Disclosed is a sterilizing device wherein the aluminum composition of the active layer is higher than that of the active layer, and the aluminum composition of the light absorption layer is smaller than the aluminum composition of the active layer.

Description

Sterilizing device and electronic products including the same {STERILLIZER AND ELECTRICAL APPLIANCES INCLUDING THE SAME}

The embodiment relates to a sterilizing device and electronic products including the same.

In general, a sterilizing device can be used as a device to sterilize an object by irradiating the object with ultraviolet rays. Objects may be made of various types, including fluids such as beverages, drinking water, and air, and containers such as dishes. A sterilizing device can provide a user with an object that has been sterilized from microorganisms.

However, there is a problem that the output of ultraviolet rays used in the sterilizing device gradually decreases depending on the operation time of the sterilizing device, thereby reducing the sterilizing power.

Additionally, there is a limitation in which accurate measurement of ultraviolet light generated from a sterilizing device cannot be performed.

Cited document: Korean Patent Publication No. 10-2015-0012971 (2015.02.04.)

Embodiments provide various types of sterilizing devices.

Additionally, a sterilization device that accurately measures the intensity of a light source is provided.

In addition, a sterilization device capable of efficient sterilization by maintaining light output is provided.

In addition, a sterilizing device that maintains sterilizing power even when operating time increases is provided.

A sterilizing device according to an embodiment of the present invention includes a substrate; a light emitting device disposed on the substrate; and a light receiving element disposed on the substrate, wherein the light emitting element includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and a light receiving element disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. It includes an active layer, and the light receiving element includes a third conductivity type semiconductor layer, a fourth conductivity type semiconductor layer, and a light absorption layer disposed between the third conductivity type semiconductor layer and the fourth conductivity type semiconductor layer. 3 The conductive semiconductor layer is disposed on the light-receiving side based on the light absorption layer, the active layer, the light absorption layer, and the third conductive semiconductor layer include aluminum, and the aluminum composition of the third conductive semiconductor layer is It is higher than the aluminum composition of the active layer, and the aluminum composition of the light absorption layer is smaller than the aluminum composition of the active layer.

Light emitted from the light-emitting device may pass through an object and be absorbed by the light-receiving device.

The light emitting element and the light receiving element may be arranged to face each other with respect to the object.

It may further include a reflective member disposed on the light emitting device and the light receiving device.

The object may include microorganisms including at least one of mold, bacteria, and bacteria.

It further includes a control module, wherein the control module receives a light detection signal from the light receiving element, calculates the optical output of the light emitting element, and outputs a driving signal; and a power supply unit that applies power to the light emitting device according to the driving signal.

The driving signal may be adjusted so that the optical output of the light emitting device is greater than a preset optical output.

The control module may be disposed inside the board.

An electronic product according to an embodiment of the present invention includes a case; a sterilizing device disposed within the case; and a control unit communicating with the sterilization device, wherein the sterilization device includes: a substrate; a light emitting device disposed on the substrate; and a light receiving element disposed on the substrate, wherein the light emitting element is disposed between a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. Comprising an active layer, The light receiving element includes a third conductivity type semiconductor layer, a fourth conductivity type semiconductor layer, and a light absorption layer disposed between the third conductivity type semiconductor layer and the fourth conductivity type semiconductor layer, 3 The conductive semiconductor layer is disposed on the light-receiving side based on the light absorption layer, the active layer, the light absorption layer, and the third conductive semiconductor layer include aluminum, and the aluminum composition of the third conductive semiconductor layer is The aluminum composition of the active layer may be higher, and the aluminum composition of the light absorption layer may be smaller than the aluminum composition of the active layer.

According to embodiments, the sterilizing device may have various forms.

In addition, it is possible to manufacture a sterilization device that accurately measures the intensity of the light source and maintains light output to enable efficient sterilization.

Additionally, it is possible to manufacture a sterilizing device that maintains sterilizing power even if the operating time increases.

The various and beneficial advantages and effects of the present invention are not limited to the above-described content, and may be more easily understood through description of specific embodiments of the present invention.

1 is a conceptual diagram of a sterilization device according to a first embodiment of the present invention,
Figure 2 is a conceptual diagram of the light emitting device of Figure 1;
Figure 3 is a conceptual diagram of the light receiving element of Figure 1;
Figure 4 is a first modified example of the sterilizing device according to the first embodiment of the present invention,
Figure 5 is a second modified example of the sterilizing device according to the first embodiment of the present invention;
Figure 6 is a conceptual diagram of a sterilization device according to a second embodiment of the present invention;
Figure 7 is a conceptual diagram of a sterilizing device according to the third embodiment of the present invention,
Figures 8 and 9 are graphs showing light output according to duration depending on the presence or absence of the control unit,
Figure 10 is a block diagram of an electronic product according to an embodiment of the present invention.

Since the present invention can be subject to various changes and can have various embodiments, specific embodiments will be illustrated and described in the drawings. However, this is not intended to limit the present invention to specific embodiments, and should be understood to include all changes, equivalents, and substitutes included in the spirit and technical scope of the present invention.

Terms containing ordinal numbers, such as second, first, etc., may be used to describe various components, but the components are not limited by the terms. The above terms are used only for the purpose of distinguishing one component from another. For example, the second component may be referred to as the first component without departing from the scope of the present invention, and similarly, the first component may also be referred to as the second component. The term and/or includes any of a plurality of related stated items or a combination of a plurality of related stated items.

When a component is said to be "connected" or "connected" to another component, it is understood that it may be directly connected to or connected to the other component, but that other components may exist in between. It should be. On the other hand, when it is mentioned that a component is “directly connected” or “directly connected” to another component, it should be understood that there are no other components in between.

The terms used in this application are only used to describe specific embodiments and are not intended to limit the invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, terms such as “comprise” or “have” are intended to designate the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, but are not intended to indicate the presence of one or more other features. It should be understood that this does not exclude in advance the possibility of the existence or addition of elements, numbers, steps, operations, components, parts, or combinations thereof.

Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person of ordinary skill in the technical field to which the present invention pertains. Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related technology, and unless explicitly defined in the present application, should not be interpreted in an ideal or excessively formal sense. No.

Hereinafter, the embodiment will be described in detail with reference to the attached drawings, but identical or corresponding components will be assigned the same reference numbers regardless of the reference numerals, and duplicate descriptions thereof will be omitted.

1 is a conceptual diagram of a sterilization device according to a first embodiment of the present invention.

Referring to FIG. 1, a sterilizing device 10A according to an embodiment includes a substrate 300, a light emitting element 100 disposed on the substrate 300, and a sterilizing device 10A disposed on the substrate 300. It may include a light receiving element 200 and a reflective member 400.

The substrate 300 may include a circuit pattern (not shown) that is electrically connected to the light emitting device 100 and the light receiving device 200. The substrate 300 is not particularly limited as long as it electrically connects an external power source and a device.

The inside of the substrate 300 may include a control module 320 and/or a communication module. Therefore, the size of the sensor can be miniaturized.

The control module 320 may apply power to the light emitting element 100 and the light receiving element 200, amplify the signal detected by the light receiving element 200, or transmit the detected signal to the outside. The control module 320 may be an FPGA or ASIC. However, it is not limited to this.

The housing 310 may be coupled to the substrate 300 to form first and second spaces 311 and 312 that accommodate the light emitting device 100 and the light receiving device 200, but is not limited thereto. The first and second spaces 311 and 312 may be filled with a molding member 313.

The molding member 313 can protect the light emitting device 100 and the light receiving device 200. The material of the housing 310 is not particularly limited.

The light emitting device 100 may output light in the ultraviolet wavelength range to the outside of the housing 310. The light emitting device 100 may output light in the near-ultraviolet wavelength range (UV-A), may output light in the far-ultraviolet wavelength range (UV-B), or emits light in the deep ultraviolet wavelength range (UV-C). can do. The ultraviolet wavelength range may be determined by the Al composition ratio of the light emitting device 100.

For example, light in the near-ultraviolet wavelength range (UV-A) may have a wavelength in the range of 320 nm to 420 nm, light in the far-ultraviolet wavelength range (UV-B) may have a wavelength in the range of 280 nm to 320 nm, and deep ultraviolet rays may have a wavelength in the range of 280 nm to 320 nm. Light in the wavelength range (UV-C) may have a wavelength ranging from 100 nm to 280 nm.

An object P may be placed on the light emitting device 100. The object (P) may be a variety of microorganisms contained in a fluid including air, water, etc., but is not limited thereto. Here, microorganisms may be biological particles including mold, germ, bacteria, etc.

And the object P can transmit the light emitted from the light emitting device 100. Accordingly, the light passing through the object P may be reflected by the reflective member 400, pass through the object P again, and be provided to the light receiving element 200. By this configuration, the sterilization efficiency of the sterilization device 10A can be improved. However, the object P is not limited to having light transparency.

Referring to FIG. 1, the light receiving device 200 may absorb light emitted from the light emitting device 100. Therefore, the light absorption wavelength band of the light receiving device 200 must include the light emission wavelength band of the light emitting device 100. For example, when the light absorption wavelength band of the light receiving device 200 is smaller than the light emission wavelength band of the light emitting device 100, the light receiving device 200 accurately detects the light emitted from the light emitting device 100. This can get difficult. In contrast, when the light absorption wavelength band of the light receiving device 200 includes the light emission wavelength band of the light emitting device 100, for example, the light receiving device 200 receives a lot of light from the light emitted from the light emitting device 100. Accurate light detection can be achieved by generating photocurrent.

Accordingly, the light receiving device 200 can determine the light output of the light emitting device 100 according to the degree of light detection.

According to the embodiment, the light emitting device 100 and the light receiving device 200 are modularized on the substrate 300, so miniaturization is possible. However, the substrate 300 may be one substrate or may be a plurality of separated or spaced apart substrates.

The light emitting device 100 may be a UV light emitting diode, and the light receiving device 200 may be a UV photodiode. The light receiving element 200 may include a p-n junction or a pin structure. When light is incident on the photo diode, electrons and holes are generated and current flows. At this time, the size of the photo current is almost proportional to the intensity of the light incident on the photo diode. The light receiving device 200 may be an avalanche photo diode (APD) that improves gain by multiplying carriers.

The light emitting device 100 includes a first conductive semiconductor layer 120, an active layer 130, and a first conductive semiconductor layer 140, and the light receiving device 200 includes a third conductive semiconductor layer 220, It may include a light absorption layer 230 and a fourth conductive semiconductor layer 240.

The first to fourth conductive semiconductor layers 120, 140, 220, and 240, the active layer 130, and the light absorption layer 230 may all include AlGaN. At this time, the third conductive semiconductor layer 220 may be disposed on the light-receiving side with respect to the light absorption layer 230.

Additionally, the aluminum composition of the third conductive semiconductor layer 220 may be higher than that of the active layer 130, and the aluminum composition of the light absorption layer 230 may be smaller than that of the active layer 130.

FIG. 2 is a conceptual diagram of the light-emitting device of FIG. 1, and FIG. 3 is a conceptual diagram of the light-receiving device of FIG. 1.

Referring to FIG. 2, the light emitting device 100 includes a light emitting structure including a first conductivity type semiconductor layer 120, a second conductivity type semiconductor layer 140, and an active layer 130, and a first conductivity type semiconductor layer ( It may include a first electrode 110 electrically connected to 120 and a second electrode 150 electrically connected to the second conductive semiconductor layer 140.

The first conductivity type semiconductor layer 120 may be implemented with a compound semiconductor such as group III-V or group II-VI, and the first conductivity type semiconductor layer 120 may be doped with a first dopant. The first conductive semiconductor _{layer 120} is _a semiconductor material with a composition formula _{of In} For example, it may be selected from GaN, AlGaN, InGaN, InAlGaN, etc. And, the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductive semiconductor layer 120 doped with the first dopant may be an n-type semiconductor layer.

The active layer 130 is a layer where electrons (or holes) injected through the first conductive semiconductor layer 120 and holes (or electrons) injected through the second conductive semiconductor layer 140 meet. The active layer 130 transitions to a low energy level as electrons and holes recombine, and can generate light with a corresponding wavelength.

The active layer 130 may have any one of a single well structure, a multi-well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure. The structure is not limited to this. The active layer 130 can generate light in the ultraviolet wavelength range. The active layer 130 may include AlGaN.

The second conductive semiconductor layer 140 is disposed below the active layer 130 and may be implemented with a compound semiconductor such as group III-V or group II-VI, and the second conductive semiconductor layer 140 Dopants may be doped. The second conductive semiconductor layer 140 is made of a semiconductor material with a composition formula of Inx ₅ Al _y2 Ga _{1 -x5- y2} N (0≤x5≤1, 0≤y2≤1, 0≤x5+y2≤1) or AlInN. , AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, Ba, etc., the second conductive semiconductor layer 140 doped with the second dopant may be a p-type semiconductor layer.

When the second conductive semiconductor layer 140 is AlGaN, hole injection may not be smooth due to low electrical conductivity. Therefore, GaN, which has relatively excellent electrical conductivity, may be disposed under the second conductivity type semiconductor layer 140.

The first electrode 110 and the second electrode 150 are made of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), and indium gallium zinc oxide (IGZO). ), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, It may be formed including at least one of Ru, Mg, Zn, Pt, Au, and Hf, but is not limited to these materials.

The first substrate 160 may include a material selected from the group consisting of silicon, molybdenum, silicon, tungsten, copper, and aluminum, or an alloy thereof. And the first substrate 160 may be placed on the substrate 300. However, it is not limited to this.

The same contents as those for the first substrate 160 may be applied to the second substrate 260 .

The light emitting device 100 may have various bonding forms. For example, the light emitting device 100 may have a horizontal bonding structure, a vertical bonding structure, or a flip chip bonding structure.

Referring to FIG. 3 , the light receiving element 200 may include a third conductivity type semiconductor layer 220, a light absorption layer 230, and a fourth conductivity type semiconductor layer 240. The third conductivity type semiconductor layer 220 may be doped with a first dopant, and the fourth conductivity type semiconductor layer 240 may be doped with a second dopant.

The first dopant is an n-type dopant and may include, but is not limited to, Si, Ge, Sn, Se, and Te. Additionally, the second dopant is a p-type dopant and may include Mg, Zn, Ca, Sr, Ba, etc., but is not limited thereto.

The light absorption layer 230 may be disposed between the third conductive semiconductor layer 220 and the fourth conductive semiconductor layer 240. The light absorption layer 230 may include an intrinsic semiconductor layer. Here, the intrinsic semiconductor layer may be an undoped semiconductor layer or an unintentionally doped semiconductor layer.

An unintentional semiconductor layer may mean that N-vacancy occurs without doping of an n-type dopant, such as a silicon (Si) atom, during the semiconductor layer growth process. At this time, as the N-vacancy increases, the concentration of excess electrons increases, so even if it was not intended in the manufacturing process, it can have electrical characteristics similar to those doped with an n-type dopant. A portion of the light absorption layer 230 may be doped with a dopant through diffusion.

The third conductive semiconductor layer 220, the fourth conductive semiconductor layer 240, and the light absorption layer 230 may be formed of a semiconductor compound, for example, InxAlyGa1-x-yN (0≤x≤1 , 0≤y≤1, 0≤x+y≤1), or includes a semiconductor material with a composition formula of InAlAs, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP , it may include any one or more of InGaP, AlInGaP, and InP.

And the third conductive semiconductor layer 220 may be disposed on the light absorption layer 230. The third conductive semiconductor layer 220 may be disposed on a side that receives light emitted from the light emitting device 100 with respect to the light absorption layer 230.

The aluminum composition of the third conductive semiconductor layer 220 may be greater than that of the active layer 230. Additionally, the aluminum composition of the light absorption layer 230 may be smaller than the aluminum composition of the active layer 130.

Depending on the aluminum composition of the third conductive semiconductor layer 220, the aluminum composition of the active layer 130, and the aluminum composition of the light absorption layer 230, the light receiving device 200 generates a photocurrent by the light emitted from the light emitting device 100. may not be created.

The aluminum composition of the third conductive semiconductor layer 220 and the aluminum composition of the light absorption layer 230 can determine the wavelength band of light that generates photocurrent.

For example, the aluminum composition of the third conductive semiconductor layer 220 may be 0.6%, and the aluminum composition of the light absorption layer 230 may be 0.4%. At this time, the third conductive semiconductor layer 220 contains Al _0.6 Ga _0.4 N and can react to light with a wavelength of 240 nm or more. And the light absorption layer 230 is Al _{0 .} It can respond to light with a wavelength of 285 nm _or less, including ₄ Ga _0.6 N. Accordingly, the light receiving element 200 can generate a photocurrent for light having a wavelength range of 240 nm to 285 nm.

In order for the light-receiving element 200 to detect ultraviolet light emitted by the light-emitting element 100, for example, the light-emitting element 100 may emit light having a wavelength range of 240 nm to 285 nm, and the active layer 130 ) is Al _{0 . 4} Ga _{0.6 N} to Al _{0 .} It may contain ₆ Ga _{0.4 N.}

Accordingly, in the light emitting device 100, the aluminum composition of the active layer 130 may be higher than the aluminum composition of the light absorption layer 230 and may be lower than the aluminum composition of the third conductive semiconductor layer 220.

With this configuration, the light receiving element 200 can accurately detect ultraviolet light emitted from the light emitting element 100.

The light receiving element 200 may absorb external light by forming a depletion region inside the light absorption layer 230. Additionally, light may be absorbed in the area between the light absorption layer 230 and the third and fourth conductive semiconductor layers 230 and 240. However, it is not necessarily limited to this, and the light receiving element 200 may further include a functional layer 270 for multiplying carriers. The functional layer 270 may be disposed between the fourth conductive semiconductor layer 240 and the light absorption layer 230. The functional layer 270 may be an n-type semiconductor layer or a p-type semiconductor layer. The functional layer 270 may have various semiconductor layer structures having an avalanche function.

The light receiving element 200 may have various bonding forms. For example, the light receiving element 200 may have a horizontal bonding structure, a vertical bonding structure, or a flip chip bonding structure.

Figure 4 is a first modified example of the sterilizing device according to the first embodiment of the present invention.

Referring to FIG. 4, in FIG. 1, the light emitting device 100 and the light receiving device 200 are located in the same space without the first and second space portions 311 and 312 accommodating the light emitting device 100 and the light receiving device 200. ) can be placed.

When each of the light-emitting device 100 and the light-receiving device 200 is placed in the same space, spatial efficiency increases, thereby enabling miniaturization of the sterilizing device 10B.

In FIG. 1, the light emitted from the light emitting device 100 may be absorbed by the housing 310 disposed between the light emitting device 100 and the light receiving device 200, thereby reducing the light output efficiency, so the sterilization device of FIG. 4 (10B) can provide efficient optical output.

Figure 5 is a second modified example of the sterilizing device according to the first embodiment of the present invention.

Referring to FIG. 5, a plurality of light emitting devices 100a and 100b may be disposed on the substrate 300. Additionally, the light receiving element 200 may be disposed between a plurality of light emitting elements, but is not limited thereto.

The sterilizing device 10C can obtain higher light output through a plurality of light emitting elements 100a and 100b. With this configuration, it is possible to provide a certain level of sterilizing power over a wider range.

Figure 6 is a conceptual diagram of a sterilization device according to a second embodiment of the present invention.

Referring to FIG. 6, an object P may be placed between the light emitting device 100 and the light receiving device 200. As an example, ultraviolet light emitted from the light emitting device 100 may pass through the object P and be received by the light receiving device 200 .

The light emitting device 100 and the light receiving device 200 may be arranged to correspond to each other based on the object P. Due to this configuration, the light is not partially absorbed or reflected through the reflective member, so the light receiving element 200 in the sterilizing device 10D can detect light more accurately.

Figure 7 is a conceptual diagram of a sterilization device according to a third embodiment of the present invention.

Referring to FIG. 7, the sterilization device 10E may include a control module 320 including a control unit 321 and a power unit 322.

The control unit 321 may receive the light detection signal detected by the light receiving element 200. The light detection signal may be an electrical signal representing the magnitude of current and/or voltage generated when the light receiving element 200 receives light, but is not limited thereto.

The control unit 321 may control the light output of the light-emitting device 100 so that the sterilizing power is maintained at a certain level or higher according to the light detection signal. For example, 150 mW or more of ultraviolet light may be required to sterilize water flowing at a rate of 1 L/min. The control unit 321 can calculate light output using a light detection signal. When the calculated optical output is less than 150 mW, the control unit 321 may transmit a driving signal to the power unit 322 to apply high power to the light emitting device 100 so that the optical output is 150 mW or more. And the power supply unit 322 can increase the power applied to the light emitting device 100 according to the driving signal.

With this configuration, the control unit 321 can prevent the light output of the light emitting element 100 of the sterilizing device 10E from decreasing depending on the operating time.

In addition, it is possible to prevent the light output of the sterilizing device 10E from gradually decreasing depending on the operating time, thereby providing sterilizing power maintained at a certain level.

For example, by setting the initial light output of the sterilizing device 10E to a limited light output, the sterilizing device 10E may be provided with constant light output regardless of the operating time. Here, the initial optical output is the optical output measured when the sterilizing device 10E is first driven, and the limited optical output may be the reference optical output that generates the driving signal in the control unit.

Figures 8 and 9 are graphs showing light output according to duration depending on the presence or absence of the control unit. Referring to FIGS. 8 and 9 , when the control unit does not exist, as the driving time increases, the light output may gradually decrease compared to the initial light output.

Accordingly, the ultraviolet light emitted from the light emitting device at a certain point in time may not have sufficient sterilizing power to sterilize the object.

In contrast, when the optical output is controlled through the adjuster, the optical output may remain the same as the initial optical output even if the driving time increases.

With this configuration, constant sterilizing power can be provided even during the use time of the sterilizing device. Additionally, it can provide the sterilizing power necessary to sterilize an object.

Figure 10 is a block diagram of an electronic product according to an embodiment of the present invention.

Referring to FIG. 10, the electronic product according to the embodiment includes a case 2, a sterilizing device 10 disposed within the case 2, a function unit 40 that performs the function of the product, and a control unit 20. do.

Electronic products may be a concept that includes various home appliances. By way of example, the electronic product may be a home appliance that receives power and performs a certain role, such as a refrigerator, air purifier, air conditioner, water purifier, humidifier, etc.

However, it is not necessarily limited to this, and electronic products may include products that have a predetermined enclosed space, such as automobiles. In other words, electronic products may be a concept that includes all various products that provide microbial sterilization of an object (P).

The functional unit 40 may perform the main function of the electronic product. For example, when the electronic component is an air conditioner, the functional unit 40 may be a part that controls the temperature of the air. Additionally, when the electronic component is a water purifier, the functional unit 40 may be a part that purifies water.

The control unit 20 may communicate with the functional unit 40 and the sterilizing device 10. The control unit 20 may operate the sterilizing device 10 to sterilize objects introduced into the case 2. As described above, the sterilizing device 10 according to the embodiment can be miniaturized in a module form and thus can be mounted on electronic products of various sizes.

The control unit 20 may receive information about the optical output of the ultraviolet light detected by the sterilizing device 10 and compare it with pre-stored data to determine a failure of the sterilizing device 10. Pre-stored data may be stored in memory in a look-up table format and may be updated periodically.

As a result of the detection, if the light output is below a preset reference value, the control unit 20 may determine that the sterilizing device 10 should be replaced or may output a warning signal to the display unit 30.

Although the present invention has been described above with reference to preferred embodiments, those skilled in the art may make various modifications and changes to the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. You will understand that you can do it.

10: Sterilization device
100: light emitting device
120: First conductive semiconductor layer
130: active layer
140: Second conductive semiconductor layer
200: Light receiving element
220: Third conductive semiconductor layer
230: Light absorption layer
240: Fourth conductive semiconductor layer
300: substrate

Claims (9)

Board;
a light emitting device disposed on the substrate; and
It includes a light receiving element disposed on the substrate,
The light emitting device includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer,
The light receiving element includes a third conductivity type semiconductor layer, a fourth conductivity type semiconductor layer, and a light absorption layer disposed between the third conductivity type semiconductor layer and the fourth conductivity type semiconductor layer,
The third conductive semiconductor layer is disposed on the light-receiving side with respect to the light absorption layer,
The active layer, the light absorption layer, and the third conductive semiconductor layer include aluminum,
The aluminum composition of the third conductive semiconductor layer is higher than the aluminum composition of the active layer,
A sterilizing device in which the aluminum composition of the light absorption layer is smaller than the aluminum composition of the active layer.
According to paragraph 1,
A sterilizing device in which light emitted from the light-emitting device passes through an object and is absorbed by the light-receiving device.
According to paragraph 2,
A sterilizing device in which the light-emitting element and the light-receiving element are arranged to face each other with respect to the object.
According to paragraph 1,
A sterilizing device further comprising a reflective member disposed on the light emitting element and the light receiving element.
According to paragraph 2,
A sterilizing device wherein the object contains microorganisms including at least one of mold, bacteria, and bacteria.
According to paragraph 1,
It further includes a control module;
The control module is
a control unit that receives a light detection signal from the light receiving element, calculates an optical output of the light emitting element, and outputs a driving signal; and
A sterilizing device comprising a power supply unit that applies power to the light emitting element according to the driving signal.
According to clause 6,
A sterilizing device in which the driving signal is adjusted so that the light output of the light emitting device is greater than a preset light output.
According to clause 6,
The control module is a sterilizing device disposed inside the substrate.
case;
a sterilizing device disposed within the case; and
Comprising a control unit that communicates with the sterilizing device,
The sterilization device is,
Board;
a light emitting device disposed on the substrate; and
It includes a light receiving element disposed on the substrate,
The light emitting device includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer,
The light receiving element includes a third conductivity type semiconductor layer, a fourth conductivity type semiconductor layer, and a light absorption layer disposed between the third conductivity type semiconductor layer and the fourth conductivity type semiconductor layer,
The third conductive semiconductor layer is disposed on the light-receiving side with respect to the light absorption layer,
The active layer, the light absorption layer, and the third conductive semiconductor layer include aluminum,
The aluminum composition of the third conductive semiconductor layer is higher than the aluminum composition of the active layer,
An electronic product in which the aluminum composition of the light absorption layer is smaller than that of the active layer.

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