KR102462238B1 - Organic light emitting display device - Google Patents

Abstract

An organic light emitting diode display according to an embodiment of the present invention includes an active area, a bezel area, and an organic light emitting diode. The active area includes a plurality of pixels in which the pixel portion is partitioned, and the bezel area is located other than the active area and includes a power source. The organic light emitting diode is positioned in the pixel portion and includes a first electrode, an organic layer, and a second electrode. The bezel region further includes a power supply unit, and the power supply unit includes a second electrode and an auxiliary power supply layer. The present invention discloses that the difference between the area ratio of the first electrode in the pixel unit and the area ratio of the auxiliary power layer in the power supply unit based on the same area as the pixel unit is 15% or less.

Description

Organic light emitting display device {ORGANIC LIGHT EMITTING DISPLAY DEVICE}

The present invention relates to an organic light emitting display device, and more particularly, to an organic light emitting display device capable of reducing a difference in color between an active region and a bezel region when off.

Recently, various flat panel display devices capable of reducing weight and volume, which are disadvantages of a cathode ray tube (CRT), have been developed. Examples of the flat panel display include a liquid crystal display (LCD), a field emission display (FED), a plasma display panel (PDP), and an organic light emitting display (OLED). Organic Light Emitting Display) and the like. Among them, the organic light emitting display device (Organic Light Emitting Display) is a self-luminous display device that emits light by excitation of an organic compound. It does not require a backlight used in LCDs, so it can be lightweight and thin, and the process can be simplified. . In addition, it is possible to manufacture at low temperature, has a high response speed with a response speed of 1 ms or less, and exhibits characteristics such as low power consumption, wide viewing angle, and high contrast.

The organic light emitting display device includes a light emitting layer made of an organic material between a first electrode that is an anode and a second electrode that is a cathode. It forms an exciton and emits light by the energy generated when the exciton returns to the ground state. The organic light emitting display device may be divided into a bottom emission type and a top emission type according to a direction in which light is emitted. In the bottom emission type, light is emitted from the lower direction of the substrate, that is, from the light emitting layer to the first electrode, and the top emission type, light is emitted from the upper direction of the substrate, that is, from the light emitting layer to the second electrode.

In general, an active matrix driving type organic light emitting display device uses a top emission type to solve the problem that the area of the light emitting part is smaller than the area of the active area. That is, the top emission type organic light emitting display device has a larger area of the light emitting part than the bottom emission type displayed through a thin film transistor substrate having a complicated compensation circuit. A top emission type organic light emitting display device includes a planarization film positioned on a thin film transistor substrate, an anode electrode including a reflective layer on the planarization film, an organic layer including a light emitting layer positioned on the anode electrode, and a cathode electrode positioned thereon. .

The active area in which an image of the organic light emitting diode display is displayed is composed of various types of pixel structures as the resolution increases, and the bezel area outside the active area is an anode including a narrow bezel and a reflective layer for power supply design. including electrodes. However, due to the difference between the area ratio of the reflective layer of the anode electrode in the pixel disposed in the active region and the area ratio of the reflective layer of the anode electrode in the power supply of the bezel region, when the organic light emitting diode display is turned off, the active region and the bezel A difference in black color between regions occurs. This black color difference has problems such as lowering the appearance quality of the product and causing consumer dissatisfaction.

The present invention provides an organic light emitting display device capable of reducing a black color difference between an active region and a bezel region when the organic light emitting display device is turned off, thereby improving the appearance quality of a product and providing a feeling of satisfaction to consumers.

In order to achieve the above object, an organic light emitting diode display according to an exemplary embodiment includes an active area, a bezel area, and an organic light emitting diode. The active area includes a plurality of pixels in which the pixel portion is partitioned, and the bezel area is located other than the active area and includes a power source. The organic light emitting diode is positioned in the pixel portion and includes a first electrode, an organic layer, and a second electrode. The bezel region further includes a power supply unit, and the power supply unit includes a second electrode and an auxiliary power supply layer. The present invention discloses that the difference between the area ratio of the first electrode in the pixel unit and the area ratio of the auxiliary power layer in the power supply unit based on the same area as the pixel unit is 15% or less.

In addition, in the present invention, the first electrode and the auxiliary power layer include at least one transparent conductive layer and a reflective layer. The first electrode and the auxiliary power layer have a three-layer structure in which a reflective layer is interposed between transparent conductive layers or a two-layer structure in which a transparent conductive layer and a reflective layer are stacked. The first electrode and the auxiliary power layer have the same structure. The first electrode and the auxiliary power layer are located on the same layer.

In addition, according to the present invention, the second electrode extends from the active region to the power source and contacts the auxiliary power layer. And, the auxiliary power layer includes a plurality of exhaust holes.

In addition, in the present invention, the area ratio of the auxiliary power layer in the power supply is 100%.

The organic light emitting display device of the present invention is a top emission type.

According to the present invention, the difference between the ratio of the area occupied by the first electrode in the pixel part and the ratio of the area occupied by the auxiliary power layer based on the same area as the pixel part in the power supply is 15% or less, so that external light is not transmitted in the active region and the bezel region. There is an advantage in that it is possible to reduce a difference in color perceived by a user by being reflected.

In addition, the present invention has the advantage that, when the area ratio occupied by the first electrode in the pixel portion is large, the color difference according to the viewing angle can be reduced, and the desired color can be displayed by adjusting the area ratio occupied by the first electrode in the pixel portion. .

1 is a plan view illustrating an organic light emitting display device according to an embodiment of the present invention;
FIG. 2 is a plan view showing area A of FIG. 1; FIG.
Figure 3 is a cross-sectional view showing the structure cut along the cut line I-I' in Figure 1;
FIG. 4 is a plan view illustrating a first electrode of a pixel unit and an auxiliary power layer of a power unit of the organic light emitting display device according to an embodiment of the present invention disclosed in FIG. 2 .
5 is a cross-sectional view schematically illustrating occurrence of a black luminous sensation due to diffuse reflection of an organic light emitting display device;
6 is a cross-sectional view of an organic light emitting display device of the present invention.
7 is a plan view illustrating a first electrode of a pixel unit and an auxiliary power layer of a power unit in an organic light emitting diode display according to an embodiment of the present invention;
8 and 9 are photographs showing the organic light emitting display device when it is turned off.
10 is a color coordinate diagram of an active region of an organic light emitting diode display according to an embodiment of the present invention;

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Like reference numerals refer to substantially identical elements throughout. In the following description, if it is determined that a detailed description of a known technology or configuration related to the present invention may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. In addition, the component names used in the following description may be selected in consideration of the ease of writing the specification, and may be different from the component names of the actual product.

An organic light emitting display device according to the present invention includes a light emitting layer made of an organic material between a first electrode that is an anode and a second electrode that is a cathode. Therefore, the hole supplied from the first electrode and the electron supplied from the second electrode combine in the light emitting layer to form an exciton that is a hole-electron pair, and a person who emits light by the energy generated when the exciton returns to the ground state It is a light emitting display device.

The organic light emitting diode display according to the present invention includes a top emission type organic light emitting display device in which light is emitted from an upper direction of a substrate, that is, from an emission layer to a second electrode.

In addition, the organic light emitting display device according to the present invention is implemented by a passive driving method and an active driving method. The passive driving method is a method of emitting light by constructing pixels at the intersection of the anode and the cathode made of each line. The active driving method is a method in which a thin film transistor (TFT) is provided in each pixel to turn on/off the pixel to emit light. Although the present invention is described as an example of an active driving method, the present invention is not limited thereto and can also be applied to a passive driving method.

In addition, the organic light emitting diode display according to the present invention includes an active area and a bezel area. The active area corresponds to an area in which a plurality of pixels are arranged to display an image. The bezel area is an area other than the active area of the organic light emitting diode display and corresponds to an area in which no image is displayed. In particular, the present invention describes a region corresponding to the power supply unit among the bezel regions. The power supply unit refers to a region in which the cathode electrode of the active region extends and is connected to the auxiliary power layer. Here, the auxiliary power layer refers to a layer made of the same material as the anode electrode of the active region in the bezel region. The auxiliary power layer has the same stacked structure as the anode electrode of the active region, but is not electrically connected to or physically contacted with the anode electrode of the active region.

In addition, the organic light emitting diode display according to the present invention includes a reflective layer so that the anode electrode reflects light emitted from the light emitting layer upward. The anode electrode has a structure in which a reflective layer is interposed between ITO layers (ITO/APC/ITO) or a structure in which an ITO layer is formed on the reflective layer (ITO/APC). The auxiliary power layer formed in the bezel region has the same structure as the anode electrode of the active region for convenience of processing. In the present invention, the size or area of the anode electrode is configured in the same way as the size or area of the reflective layer. This is because, in general, the anode electrode has the same size and area because ITO and the reflective layer (APC) are patterned by the same process. Similarly, the size or area of the auxiliary power layer formed in the bezel area is the same as that of the reflective layer included in the auxiliary power layer.

<Example>

1 is a plan view showing an organic light emitting display device according to an embodiment of the present invention, FIG. 2 is a plan view showing area A of FIG. 1 , and FIG. 3 is a cross-sectional view showing the structure taken along the cut line II′ in FIG. 1 . to be.

Referring to FIG. 1 , in an organic light emitting display device 100 according to an embodiment of the present invention, an active area A/A for displaying an image on a substrate 110 and a bezel surrounding the active area A/A Includes area B/A.

In the active area A/A, a plurality of pixels P are disposed to emit red (R), green (G), and blue (B) light to realize a full color. Although red, green, and blue pixels are illustrated in the present exemplary embodiment, white (W) pixels may be further provided. Also, the plurality of pixels P may include cyan, magenta, and yellow pixels, and any known pixel configuration may be applied.

The bezel area B/A is an area surrounding the active area A/A and is an area in which no image is displayed. In the bezel area B/A, the second electrode 165 which is a cathode extending from the active area A/A is disposed, and has the same stacked structure as the first electrode 162 which is the anode of the active area A/A. An auxiliary power layer 175 having The bezel area B/A further includes a power supply unit PP. The power supply unit PP is a region in which the second electrode 165 of the active region A/A extends and is connected to the auxiliary power layer 175. In the present invention, a region corresponding to the auxiliary power layer 175 is referred to as the power supply unit ( PP).

Hereinafter, a specific structure will be described with reference to FIG. 2 which is an enlarged area A of FIG. 1 .

Referring to FIG. 2 , the organic light emitting diode display 100 according to the first exemplary embodiment includes an active area A/A and a bezel area B/A on a substrate 110 . A gate line GL, a data line DL crossing the gate line GL, and a power line VL are disposed in the active region A/A, and a pixel portion P is disposed. The pixel portion P of the present invention refers to an internal region partitioned by the intersection of the gate line GL, the data line DL, and the power line VL. Although the drawing shows that the gate line GL is not disposed below the pixel portion P, the pixel portion P may be defined because the gate lines of adjacent pixels exist.

In the pixel portion P of the present invention, the switching TFT 140 , the driving TFT 150 , and the capacitor Cst are disposed, and the organic light emitting diode 160 to which the driving TFT 150 is connected is disposed. The switching TFT 140 functions to select a pixel. The switching TFT 140 includes a semiconductor layer 141 , a gate electrode 142 branched from the gate line GL, a source electrode 143 branched from the data line DL, and a drain electrode 144 . The capacitor Cst includes a capacitor lower electrode 146 connected to the drain electrode 144 of the switching TFT 140 and a capacitor upper electrode 147 connected to the power line VL. The driving TFT 150 serves to drive the first electrode of the pixel selected by the switching TFT 140 . The driving TFT 150 includes a semiconductor layer 151 , a gate electrode 152 connected to the capacitor lower electrode 146 , a source electrode 153 branched from the power line VL, and a drain electrode 154 . The organic light emitting diode 160 includes a first electrode 162 connected to the drain electrode 154 of the driving TFT 150 , an organic layer (not shown) including a light emitting layer formed on the first electrode 162 , and a second electrode. (165).

Meanwhile, in the bezel region B/A of the present invention, the second electrode 165 extending from the active region A/A, the auxiliary power layer 175 in contact with the second electrode 165, and the GIP device fields (not shown) are placed. In more detail, the bezel area B/A includes the auxiliary power layer 175 and the corresponding power supply unit PP. The power supply unit PP refers to a region in which the second electrode 165 of the active region A/A extends and is connected to the auxiliary power layer 175 , and is a region substantially corresponding to the auxiliary power layer 175 . can

In the power supply unit PP of the present invention, the second electrode 165 extending from the active region A/A and the auxiliary power layer 175 are electrically connected to each other, thereby assisting the sheet resistance of the second electrode 165 . It serves to lower it through the power layer 175 . The second electrode 165 and the auxiliary power layer 175 are connected through the power contact hole CP formed in the bank layer 163 .

Hereinafter, it will be described with reference to FIG. 3 , which is a cross-sectional view showing the structure cut along the cut line I-I' of FIG. 2 .

Referring to FIG. 3 , in the organic light emitting display device 100 according to an embodiment of the present invention, an active area A/A and a power supply unit PP of a bezel area are positioned on a substrate 110 . The driving TFT 150 and the organic light emitting diode 160 connected to the driving TFT 150 are positioned on the substrate 110 of the active region A/A.

In more detail, the substrate 110 is made of glass, plastic, or metal. In the present invention, the substrate 110 may be made of plastic, specifically, a polyimide substrate. Accordingly, the substrate 110 of the present invention has a flexible characteristic. A first buffer layer 112 is positioned on the substrate 110 . The first buffer layer 112 serves to protect the thin film transistor formed in a subsequent process from impurities such as alkali ions leaking from the substrate 110 . The first buffer layer 112 may be a silicon oxide (SiOx), a silicon nitride (SiNx), or a multilayer thereof.

A shield layer 114 is positioned on the first buffer layer 112 . The shield layer 114 serves to prevent a reduction in panel driving current that may be generated by using the polyimide substrate. The shield layer 115 is a conductive material and may be made of a semiconductor such as silicon (Si) or a metal. A second buffer layer 116 is positioned on the shield layer 114 . The second buffer layer 116 serves to protect the thin film transistor formed in a subsequent process from impurities such as alkali ions leaking from the shield layer 114 . The second buffer layer 116 may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof.

A semiconductor layer 151 is positioned on the second buffer layer 116 . The semiconductor layer 151 may be formed of a silicon semiconductor or an oxide semiconductor. The silicon semiconductor may include amorphous silicon or crystallized polycrystalline silicon. Here, polycrystalline silicon has high mobility (100 cm2/Vs or more), low energy consumption, and excellent reliability, so it can be applied to a gate driver and/or a multiplexer (MUX) for a driving device or to a driving TFT in a pixel. have. On the other hand, since the oxide semiconductor has a low off-current, it is suitable for a switching TFT that has a short on-time and a long off-time. In addition, since the off current is small, the voltage holding period of the pixel is long, which is suitable for a display device requiring low-speed driving and/or low power consumption. In the present invention, the driving TFT 150 and the switching TFT 140 may be formed of either polycrystalline silicon or an oxide semiconductor. Also, the semiconductor layer 151 may include a source region and a drain region including p-type or n-type impurities, and may include a channel region other than the source region and the drain region.

A first insulating layer 118 that may be a gate insulating layer is positioned on the semiconductor layer 151 . The first insulating layer 120 may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof. The gate electrode 152 is positioned on the first insulating layer 118 in a predetermined region of the semiconductor layer 151 , that is, at a position corresponding to the channel region when the impurities are implanted. The gate electrode 152 is selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It is formed of any one or an alloy thereof. In addition, the gate electrode 152 is a group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be a multi-layer made of any one selected from or alloys thereof. For example, the gate electrode 152 may be a double layer of molybdenum/aluminum-neodymium or molybdenum/aluminum.

Also, the connection electrode 130 made of the same material as the gate electrode 152 is positioned on the first insulating layer 118 . The connection electrode 130 is for connecting the drain electrode 154 and the shield layer 114 to be described later, and the shield layer is formed through a through hole 131 penetrating the second buffer layer 116 and the first insulating layer 114 . (114) is connected.

A second insulating layer 124 that may be an interlayer insulating layer is positioned on the gate electrode 152 . The second insulating layer 124 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof. Partial regions of the second insulating layer 124 and the first insulating layer 118 are etched to form contact holes 120a and 120b exposing a portion of the semiconductor layer 151 . In this case, a portion of the semiconductor layer 151 exposed by the contact holes 120a and 120b may be a source region and a drain region.

A source electrode 153 and a drain electrode 154 electrically connected to the semiconductor layer 151 through contact holes 120a and 120b penetrating the second insulating layer 124 and the first insulating layer 118 are positioned. . The source electrode 153 and the drain electrode 154 may be formed of a single layer or multiple layers, and when the source electrode 153 and the drain electrode 154 are a single layer, molybdenum (Mo), aluminum (Al), It may be made of any one selected from the group consisting of chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof. In addition, when the source electrode 153 and the drain electrode 154 are multi-layered, a double layer of molybdenum/aluminum-neodymium, a triple layer of titanium/aluminum/titanium, molybdenum/aluminum/molybdenum or molybdenum/aluminum-neodymium/molybdenum can be made with Accordingly, the driving TFT 150 including the semiconductor layer 151 , the gate electrode 152 , the source electrode 153 , and the drain electrode 154 is configured. In addition, the drain electrode 154 is in contact with the connection electrode 130 and is electrically connected to the shield layer 114 .

A third insulating layer 156 is positioned on the entire surface of the substrate 110 including the driving TFT 150 . The third insulating layer 156 may be a planarization layer for alleviating the step difference in the lower structure, and is made of an organic material such as polyimide, benzocyclobutene series resin, or acrylate. The third insulating layer 156 may be formed by a method such as spin on glass (SOG) in which the organic material is coated in a liquid form and then cured. The third insulating layer 156 includes a via hole 158 exposing the drain electrode 154 of the driving TFT 150 .

The first electrode 162 and the auxiliary power layer 175 are positioned on the third insulating layer 156 . In more detail, the first electrode 162 is positioned in the active area A/A. The first electrode 162 may be an anode. Here, the first electrode 162 of the present invention includes a first reflective layer 133 interposed between the first transparent conductive layers 132 and 134 . The first transparent conductive layers 132 and 134 may be formed of a transparent and conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO). The first reflective layer 133 may be made of aluminum (Al), copper (Cu), silver (Ag), nickel (Ni), or an alloy thereof, preferably APC (silver-palladium-copper alloy). have. In the present invention, although the first electrode 162 having a three-layer structure in which the first reflective layer 133 is interposed between the first transparent conductive layers 132 and 134 has been illustrated and described, the first electrode 162 under the first reflective layer 133 is shown. The first electrode 162 having a two-layer structure in which the transparent conductive layer 132 is omitted may also be used. Accordingly, the first electrode 162 fills the via hole 158 and may be connected to the drain electrode 154 of the driving TFT 150 .

Meanwhile, the auxiliary power layer 175 is positioned in the power supply unit PP of the bezel area. The auxiliary power layer 175 includes a second reflective layer 137 interposed between the second transparent conductive layers 136 and 138 . The second transparent conductive layers 136 and 138 may be made of a transparent and conductive material such as ITO, IZO, or ZnO. The second reflective layer 137 may be made of aluminum (Al), copper (Cu), silver (Ag), nickel (Ni), or an alloy thereof, preferably APC (silver-palladium-copper alloy). have. Although the present invention has illustrated and described the auxiliary power layer 175 having a three-layer structure in which the second reflective layer 137 is interposed between the second transparent conductive layers 136 and 138, the second reflective layer 137 under the second reflective layer 137 is illustrated and described. An auxiliary power layer 175 having a two-layer structure in which the transparent conductive layer 136 is omitted may also be used. In the present invention, the structure of the first electrode 162 of the active region A/A and the structure of the auxiliary power layer 175 of the power supply unit PP may be the same in consideration of process convenience. However, the present invention is not limited thereto, and the first electrode 162 of the active region A/A has a three-layer structure and the auxiliary power layer 175 of the power supply unit PP has a two-layer structure, or The first electrode 162 of the region A/A may have a two-layer structure and the auxiliary power layer 175 of the power supply unit PP may have a three-layer structure. Since the above-described first electrode 162 and the auxiliary power layer 175 include reflective layers, an organic light emitting display device having a top emission structure may be realized and incident external light may be reflected.

Meanwhile, the bank layer 163 is positioned on the substrate 110 including the first electrode 162 and the auxiliary power layer 175 . The bank layer 163 may be a pixel defining layer that defines a pixel by exposing a portion of the first electrode 162 . In addition, the bank layer 163 exposes a portion of the auxiliary power layer 175 so that the second electrode 165 can be connected thereto. The bank layer 163 is made of an organic material such as polyimide, benzocyclobutene series resin, or acrylate. In the bank layer 163 , an opening OP exposing the first electrode 162 is formed in the active region A/A, and a power contact hole CP exposing the auxiliary power layer 175 in the power supply unit PP. ) is formed.

The organic layer 164 is positioned on the first electrode 162 exposed by the opening OP of the bank layer 163 . The organic layer 164 is a layer that emits light by combining electrons and holes, and may include a hole injection layer or a hole transport layer between the organic layer 164 and the first electrode 162 , and on the organic layer 164 . It may include an electron transport layer or an electron injection layer.

The second electrode 165 is positioned on the substrate 110 on which the organic layer 164 is formed. The second electrode 165 is positioned on the front surface of the active area A/A and partially extended to the power supply unit PP of the bezel area. Accordingly, the auxiliary power layer 175 and the second electrode 165 are electrically connected to each other through the power contact hole CP formed in the bank layer 163 of the power supply unit PP. The second electrode 165 is a cathode electrode and may be made of magnesium (Mg), calcium (Ca), aluminum (Al), silver (Ag), or an alloy thereof having a low work function. Since the organic light emitting display device 100 of the present invention is a top emission type in which light emitted from the organic layer 164 is emitted in the direction of the second electrode 165 , the second electrode 165 is configured to allow light to pass therethrough. made of thin thickness. Accordingly, in the present invention, in order to lower the high resistance of the second electrode 165 , the second electrode 165 is in contact with the auxiliary power layer 175 to lower the resistance of the second electrode 165 .

As described above, the organic light emitting diode display 100 according to an embodiment of the present invention includes a switching and driving TFT and an organic light emitting diode located in the active area A/A, and is connected to the power supply unit PP of the bezel area. It includes an auxiliary power layer located.

Hereinafter, in the present invention, a configuration for reducing the sense of black according to the difference between the area of the first electrode in the pixel unit disposed in the active area A/A and the area of the auxiliary power layer in the power source unit PP of the bezel area is disclosed. do.

FIG. 4 is a plan view illustrating a first electrode of a pixel unit and an auxiliary power layer of a power unit of the organic light emitting display device according to an exemplary embodiment of the present invention illustrated in FIG. 2 . 5 is a cross-sectional view schematically illustrating occurrence of a black luminous sensation due to diffuse reflection of the organic light emitting display device, and FIG. 6 is a cross-sectional view of the organic light emitting display device of the present invention.

Referring to FIG. 4 , the pixel portion P of the present invention includes a first electrode 162 . The pixel portion P of the present invention is defined as an inner region partitioned by intersections of a gate line, a data line, and a power line. The first electrode 162 occupies a predetermined area in the pixel portion P. In addition, the auxiliary power layer 175 occupies a predetermined area in the power supply unit PP. In the present invention, the difference between the area ratio occupied by the first electrode 162 in the pixel part P and the area ratio occupied by the auxiliary power layer 175 in the power supply part PP based on the same area as the pixel part P is 15% or less.

As shown in FIG. 4A , if the pixel portion P has an area defined by a horizontal length of x and a vertical length of y, the first electrode 162 has an area ratio of 90%. appears to occupy. And, since the power supply unit PP is defined as an area corresponding to the auxiliary power layer 175 above, as shown in FIG. 4(b) , the power supply unit PP has the same area as the pixel unit P, that is, The ratio of the area occupied by the auxiliary power layer 175 in the area defined by the horizontal length of x and the vertical length of y corresponds to 100%. Accordingly, a difference between 90% of the area occupied by the first electrode 162 in the pixel unit P and 100% of the area occupied by the auxiliary power layer 175 in the power supply unit PP is 10%.

In the present invention, the difference between the area ratio occupied by the first electrode 162 in the pixel portion P and the area ratio occupied by the auxiliary power layer 175 in the power supply portion PP based on the same area as the pixel portion P is 15. % or less.

Referring to FIG. 5 , the organic light emitting diode display includes a driving TFT (D-TFT), a switching TFT (S-TFT), an organic light emitting diode 160 connected to the driving TFT (D-TFT), and a circular polarizing plate ( Pol). When the organic light emitting diode display is turned off, when external light is incident through the circularly polarizing plate Pol, the light is reflected by metal wires such as the switching TFT (S-TFT), is diffusely reflected, and then is emitted again to the outside. When external light is diffusely reflected and emitted from the inside, the user perceives the emitted light and can feel the color. On the other hand, referring to FIG. 6 , when external light is incident through the circularly polarizing plate Pol, it is reflected by the first reflective layer 133 of the first electrode 162 and proceeds to the circularly polarizing plate Pol. When the light is polarized on the circular polarizer Pol, the user does not recognize the emitted light.

As described above, since all of the auxiliary power layers are formed in the power supply unit of the bezel region of the organic light emitting display device, even when external light is incident on the power supply unit, all of the external light is reflected by the second reflective layer of the auxiliary power layer and is polarized by the circular polarizer. Accordingly, the user does not recognize the light from which the external light is reflected. On the other hand, as shown in FIG. 5 , in the active region, when the area of the first electrode is small, external light is diffusely reflected by the internal switching TFT or other metal wires. The diffusely reflected light passes through the circularly polarizing plate and is recognized by the user. Accordingly, from the user's point of view, the bezel area does not recognize the reflected light of the external light, and the active area recognizes the reflected light of the external light, so a color difference occurs.

In the present invention, as shown in FIG. 6 , the area of the first electrode of the active region is increased to block external light from being diffusely reflected by the internal switching TFT or other metal wires. Accordingly, a color difference is prevented by preventing the user from recognizing the reflected light of the external light in the bezel area and the active area. Therefore, in the present invention, in order to prevent a user from feeling a difference in color between the bezel area and the active area, the ratio of the area occupied by the first electrode 162 in the pixel portion P and the pixel portion P in the power source PP Based on the same area, the difference in the area ratio of the auxiliary power layer 175 is formed to be 15% or less.

Meanwhile, in the above-described embodiment, it is disclosed that the ratio of the area occupied by the first electrode in the pixel part is increased to reduce the difference from the ratio of the area occupied by the auxiliary power layer of the power supply part of the bezel area. However, the present invention is not limited thereto, and the area ratio of the auxiliary power layer of the power supply unit of the bezel area may be reduced.

7 is a plan view illustrating a first electrode of a pixel unit and an auxiliary power layer of a power unit in an organic light emitting diode display according to an embodiment of the present invention.

Referring to FIG. 7 , as shown in (a), if the pixel portion P has an area defined by a horizontal length of x and a vertical length of y, the first electrode 162 is 70% of the It can be seen that it occupies the area ratio.

As shown in (b), the auxiliary power layer 175 is positioned in the power supply unit PP of the bezel area. The auxiliary power layer 175 may include a plurality of exhaust holes DH (hatched portions). The plurality of exhaust holes DH serve as passages through which outgassing from organic layers under the auxiliary power layer 175 may be discharged. The auxiliary power layer 175 provided with the exhaust hole DH may have an area ratio of 80% occupied by the power supply unit PP. Accordingly, the area ratio occupied by the first electrode 162 in the pixel portion P is 70% and the area ratio occupied by the auxiliary power layer 175 in the power supply portion PP is 80% based on the same area as the pixel portion P. There will be a difference of 10%.

Therefore, according to the present invention, color difference can be reduced by reducing the area ratio of the auxiliary power layer in the power supply part of the bezel region without adjusting the area ratio of the first electrode in the pixel part of the active region.

As described above, in order to form a difference between the ratio of the area occupied by the first electrode in the pixel part and the ratio of the area occupied by the auxiliary power layer based on the same area as the pixel part P in the power supply to 15% or less, By forming the first electrode in the pixel portion large, the area ratio of the first electrode occupied in the pixel portion may be increased. In addition, in order to form a difference between the ratio of the area occupied by the first electrode in the pixel unit and the ratio of the area occupied by the auxiliary power layer in the power unit to 15% or less, a plurality of exhaust holes are formed in the auxiliary power layer in the bezel area. , it is possible to reduce the area ratio of the auxiliary power layer occupied by the power supply unit.

Accordingly, in the present invention, the difference between the area ratio of the first electrode in the pixel part and the area ratio of the auxiliary power layer in the power supply part based on the same area as the pixel part is 15% or less, so that the active region and the bezel region There is an advantage in that a difference in color perceived by a user can be reduced by reflecting light.

<Experimental example>

Hereinafter, an experimental example for the difference in color between the active region and the bezel region according to the area ratio occupied by the first electrode in the pixel portion of the active region will be described.

8 is a photograph showing an organic light emitting display device manufactured according to a comparative example of the present invention, and FIG. 9 is a photograph showing an organic light emitting display device manufactured according to an embodiment of the present invention.

8 is an organic light emitting display device according to a comparative example, wherein the area ratio occupied by the first electrode in the pixel part of the active region is 46.9%, and the auxiliary power layer in the power supply part of the bezel region based on the same area as the pixel part P The area occupied by this ratio was manufactured at 100%. Referring to FIG. 8 , it was confirmed that the bezel area appeared black, but the active area appeared similar to gold color.

9 is an organic light emitting display device according to the embodiment, in which the ratio of the area occupied by the first electrode in the pixel part of the active region is 85%, and the auxiliary power layer occupies the same area as the pixel part in the power supply part of the bezel region. It was prepared with an area ratio of 100%. Referring to FIG. 9 , it was confirmed that the bezel area appeared black and the active area had a color close to black.

Through the above experiment, in the present invention, the difference between the area ratio of the first electrode in the pixel part and the area ratio of the auxiliary power layer in the power supply part based on the same area as the pixel part is 15% or less, so that the active region and the bezel It was confirmed that the color difference perceived by the user can be reduced by reflecting external light in the area.

Table 1 below shows the color change rate according to the viewing angle with respect to the area ratio occupied by the first electrode in the pixel portion of the active region, and FIG. 10 shows the color coordinates of the organic light emitting diode display according to the embodiment.

comparative example Example color coordinates color coordinates Viewing angle (°) CIE_x CIE_y CIE_x CIE_y 0 0.412 0.422 0.413 0.423 10 0.417 0.426 0.417 0.427 20 0.418 0.427 0.418 0.428 30 0.419 0.428 0.420 0.430 40 0.421 0.429 0.424 0.431 50 0.421 0.430 0.427 0.431 60 0.422 0.429 0.429 0.430 Amount of change in color coordinates at a viewing angle of 0 to 60° 0.010 0.007 0.016 0.007

Referring to FIG. 10 , it was confirmed that the color coordinate of the active region of the organic light emitting diode display according to the embodiment of the present invention is a yellow region.

In addition, referring to Table 1, in the organic light emitting display device of the comparative example in which the area ratio occupied by the first electrode in the pixel portion of the active region is 45%, the amount of color coordinate change from 0° to 60° CIE_x is 0.016 and CIE_y was 0.007. On the other hand, in the organic light emitting display device of the embodiment in which the area ratio occupied by the first electrode in the pixel portion of the active region is 85%, the amount of color coordinate change from 0° to 60° CIE_x is 0.010 and CIE_y is 0.007.

Through the above experiment, the present invention confirmed that the difference in color according to the viewing angle was small when the ratio of the area occupied by the first electrode in the pixel portion was large. Accordingly, the present invention confirmed that a desired color can be displayed by adjusting the area ratio occupied by the first electrode in the pixel portion.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the technical configuration of the present invention can be changed to other specific forms by those skilled in the art to which the present invention pertains without changing the technical spirit or essential features of the present invention. It will be appreciated that this may be practiced. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. In addition, the scope of the present invention is indicated by the following claims rather than the above detailed description. In addition, all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention.

100: organic light emitting display device 110: substrate
130: switching TFT 140: driving TFT
162: first electrode 165: second electrode
175: auxiliary power layer A/A: active area
B/A: Bezel area PP: Power supply

Claims (13)

a substrate including an active region including a plurality of pixel units and a bezel region disposed outside the active region and including a power supply unit;
at least one first thin film transistor disposed in each pixel unit;
at least one second thin film transistor and a plurality of wirings disposed in the bezel area;
an insulating layer covering the first thin film transistor, the second thin film transistor, and the wiring;
an organic light emitting diode disposed on the insulating film of each of the pixel units and including a first electrode, an organic film layer, and a second electrode; and
and an auxiliary power layer positioned on the insulating film of the bezel region;
The first electrode is formed to cover the first thin film transistor to block external light from being incident on the first thin film transistor, and the auxiliary power layer is formed to cover the second thin film transistor and the wiring so that external light is not transmitted. Blocking incident to the second thin film transistor and the wiring,
The second electrode extends from the pixel unit to the power source and contacts the auxiliary power layer. The method of claim 1,
and the first electrode and the auxiliary power layer include at least one transparent conductive layer and a reflective layer. 3. The method of claim 2,
and the first electrode and the auxiliary power layer have a three-layer structure in which a reflective layer is interposed between transparent conductive layers or a two-layer structure in which a transparent conductive layer and a reflective layer are stacked. The method of claim 1,
The first electrode and the auxiliary power layer have the same structure. The method of claim 1,
The first electrode and the auxiliary power layer are positioned on the same layer. delete The method of claim 1,
The auxiliary power layer includes a plurality of exhaust holes. delete The method of claim 1,
The organic light emitting display device is a top emission type organic light emitting display device. delete The organic light emitting diode display of claim 1 , wherein a difference between an area ratio of the first electrode in the pixel unit and an area ratio of the auxiliary power layer in the power supply unit based on the same area as the pixel unit is 15% or less. . The organic light emitting diode display of claim 11 , wherein an area ratio of the auxiliary power layer in the power supply is 100%. The organic light emitting diode display of claim 1 , further comprising a polarizing plate disposed on the active region and the bezel region to block external light reflected from the second electrode and the auxiliary power layer.

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