KR102458870B1 - Repairing apparatus and method - Google Patents

Abstract

According to the present invention, a first stage formed to support a first substrate, a second stage formed to support a second substrate, and a first stage and a second stage are moved above the first stage and the second stage to irradiate a laser beam It includes a laser unit arranged so as to allow the laser beam to pass therethrough, and a picker unit which is arranged in a path of the laser beam so as to transmit the laser beam, and is formed to adsorb a chip separated from the first substrate and place it at a repair position of the second substrate. Provided are a repair apparatus and a repair method applied thereto, which can stably separate a chip from a first substrate and shorten an overall repair process time.

Description

Repair apparatus and method {REPAIRING APPARATUS AND METHOD}

The present invention relates to a repair apparatus and method, and more particularly, to a repair apparatus and method capable of reducing an overall repair process time while stably separating a chip from a substrate.

A micro light emitting diode refers to a light emitting diode (hereinafter, referred to as a 'chip') having a side size of 100 μm or less. A display device may be manufactured by transferring a plurality of chips to a substrate to form a plurality of pixels.

In the process of transferring the plurality of chips to the substrate, some chips may be damaged. Accordingly, after transferring the plurality of chips to the substrate, an inspection process of inspecting whether the chip is defective, and a repair process of replacing the inspected defective chip with a new normal chip are performed. Among them, the repair process includes a process of removing the defective chip after separating it from the substrate, and a process of placing the normal chip at a repair position from which the defective chip is removed.

Conventionally, a normal chip was seated on a substrate using an adhesive sheet. That is, the normal chip was attached to the adhesive sheet, the adhesive sheet was moved to the repair position of the substrate, the adhesive sheet was lowered to attach the normal chip to the substrate, and the adhesive sheet was raised to separate it from the normal chip. Therefore, it was difficult to separate the normal chip from the pressure-sensitive adhesive sheet due to the adhesive strength of the pressure-sensitive adhesive sheet.

The technology underlying the present invention is disclosed in the following patent documents.

US 10-2019-0096256 A US 10-2020-0094498 A

The present invention provides a repair apparatus and method capable of stably separating a chip from a substrate and shortening an overall repair process time.

A repair apparatus according to an embodiment of the present invention is a repair apparatus for transferring a chip formed on a first substrate to a second substrate, the repair apparatus comprising: a first stage formed to support the first substrate; a second stage formed to support the second substrate; a laser unit disposed to irradiate a laser beam to at least one of the first substrate and the second substrate; and a picker part disposed in a traveling path of the laser beam so as to transmit the laser beam, and formed to adsorb the chip separated from the first substrate and position it at the repair position of the second substrate. .

The laser unit and the picker unit are centered on a straight line, the picker unit includes a window and a glass member at upper and lower portions, and at least one suction hole is formed to pass through the glass member, the window and the glass member may be disposed in the traveling path of the laser beam.

The picker unit, the inside is opened downward, the cylinder body is provided with a window on the upper portion; a glass member mounted on an opening in the lower portion of the cylindrical body and having one or more suction holes; may include; a suction member connected to the decompression chamber inside the cylinder.

A plurality of suction holes may be formed in the glass member, the plurality of suction holes may be connected to the decompression chamber, and an area in which the plurality of suction holes are disposed may intersect a traveling path of the laser beam.

An area in which the plurality of suction holes are disposed may be smaller than or equal to an area of the separated chip.

An area in which the plurality of suction holes are disposed is larger than an area of the separated chip, a size of one or more suction holes among the plurality of suction holes is larger than an area of the separated chip, and the size of the remaining suction holes is larger than that of the separated chip. may be smaller than the area.

and an observation unit formed to observe at least one of the separated chip, the first substrate, and the second substrate through the picker unit.

A repair method according to an embodiment of the present invention includes the steps of: providing a first substrate on which a plurality of chips are formed on a first stage; providing a second substrate on a second stage; selecting one chip from among the plurality of chips and adsorbing the selected chip; separating the selected chip from the first substrate; transferring the selected chip to an upper side of the second substrate; locating the selected chip at a repair position of the second substrate and irradiating a laser beam to the second substrate while maintaining adsorption, thereby bonding the selected chip and the second substrate; and releasing the adsorption of the selected chip.

before the step of sucking the selected chip, sucking the defective chip on the second substrate; releasing the coupling between the defective chip and the second substrate by irradiating a laser beam to the second substrate while maintaining the adsorption; and removing the defective chip from the second substrate.

The process of removing the bad chip from the second substrate may include removing the disconnected bad chip by discharging the bad chip connected to the bad chip into a suction path for sucking the bad chip.

The process of removing the bad chip from the second substrate may include: adsorbing the uncoupled bad chip to a suction path connected to the bad chip and sucking the bad chip; and transferring the adsorbed defective chip away from the second substrate.

In the process of sucking the defective chip on the second substrate and releasing the coupling between the defective chip and the second substrate, a laser beam traveling path may be aligned with the suction path.

The step of sucking the selected chip may include: connecting the selected chip to a plurality of suction paths; It may include; a process of decompressing the plurality of suction paths.

The process of transferring the selected chip may include a process of adjusting a level of the selected chip using the plurality of suction paths.

It may include; from the process of adsorbing the selected chip to the process of releasing the adsorption, the process of observing the selected chip through a picker unit that provides a suction path to the selected chip.

According to the embodiment of the present invention, the position of the chip can be fixed by adsorbing the chip to the picker unit while the substrate and the chip are bonded by irradiating the laser beam. Accordingly, it is possible to effectively prevent the chip from moving on the substrate. In addition, as soon as the substrate and the chip are combined, the suction of the chip is released and the picker unit can be quickly lifted from the chip. Accordingly, the overall repair process time can be shortened.

1 is a schematic diagram of a repair apparatus according to an embodiment of the present invention.
2 is a schematic diagram showing the operation of the picker unit and the laser unit according to an embodiment of the present invention.
3 is a schematic diagram showing the operation of the picker unit and the laser unit according to an embodiment of the present invention.
4 is an enlarged view of a glass member according to an embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings, an embodiment of the present invention will be described in detail. However, the present invention is not limited to the embodiments disclosed below, and will be implemented in various different forms. Only the embodiments of the present invention are provided to complete the disclosure of the present invention, and to completely inform those of ordinary skill in the art the scope of the invention. The drawings may be exaggerated in order to explain the embodiment of the present invention, and the same reference numerals in the drawings refer to the same elements.

The repair apparatus according to an embodiment of the present invention may be applied to a repair apparatus that repairs a second substrate by transferring various semiconductor devices from a first substrate to a second substrate.

1 is a schematic diagram of a repair apparatus according to an embodiment of the present invention. 2 is a schematic diagram showing the operation of the picker unit and the laser unit according to an embodiment of the present invention. 3 is a schematic diagram showing the operation of the picker unit and the laser unit according to an embodiment of the present invention.

1 to 3 , a repair apparatus according to an embodiment of the present invention is a repair apparatus that transfers a chip 21 formed on a first substrate 11 to a second substrate 12 , and includes the first substrate. The first stage 110 formed to support the 11 , the second stage 120 formed to support the second substrate 12 , the first substrate 11 , and the second substrate 12 . A laser unit 200 arranged to irradiate a laser beam to at least one of the substrates, a laser beam disposed in the traveling path L of the laser beam so as to transmit the laser beam, and separated from the first substrate 11 and a picker unit 300 formed to adsorb the chip 21a and position it at the repair position R of the second substrate 12 .

In addition, the repair apparatus according to an embodiment of the present invention may further include an observation unit 400 formed to observe the separated chip 21a.

The chips 21 and 22 may include micro light emitting diodes. Of course, the chips 21 and 22 may include various electronic device chips in addition to the micro light emitting diode. The overall shape of these chips 21 and 22 may be a square plate shape. In addition, the size of one side of the chips 21 and 22 in the horizontal direction may be greater than 0 and less than or equal to 100 μm. For example, the chips 21 and 22 may have a size of 20 μm to 30 μm on one side. Of course, the shapes and sizes of the chips 21 and 22 may vary.

The chips 21 and 22 may be manufactured by growing thin films of various inorganic materials on a growth substrate including a sapphire material or a silicon material. The manufactured chips 21 and 22 may be separated from the growth substrate and may be attached to the first substrate 11 and the second substrate 12 . On the other hand, when there is no need to distinguish between the first substrate 11 and the second substrate 12 hereinafter, they are collectively referred to as a substrate.

The first substrate 11 may include a glass substrate or a wafer substrate. In this case, the first substrate 11 may be referred to as a sacrificial substrate or a temporary substrate. A plurality of chips 21 may be adhered to and attached to the first substrate 11 . The chip 21 attached to the first substrate 11 may be used in a process of repairing a defect of the chip 22 attached to the second substrate 12 .

The second substrate 21 may be a substrate for manufacturing a display device. The second substrate 21 may include a glass substrate. The second substrate 21 may include predetermined wiring and a thin film transistor. The wiring and the thin film transistor may include a transparent material. A plurality of chips 22 may be attached to the second substrate 12 through solder balls. The chip 22 attached to the second substrate 12 may be connected to a wiring and a thin film transistor to form a pixel.

Meanwhile, since the size of the chip 22 is in the unit of micrometers, it is difficult to attach the plurality of chips 22 to the second substrate 21 one by one. Therefore, when attaching the plurality of chips 22 to the second substrate 12 , a transfer method may be used.

After transferring the plurality of chips 22 to the second substrate 21 , it is possible to inspect whether the chips 22 are defective. For example, by connecting a predetermined probe (not shown) to the chip 22 or wiring and then applying an electrical signal to check whether the chip 22 is operating, it is possible to check whether the chip 22 is defective or normal. That is, by applying an electrical signal to the plurality of chips 22 , a normally operating chip may be inspected as a normal chip, and a chip that does not may be inspected as a bad chip. Of course, the method of inspecting the chip 22 may vary.

If a defective chip is found by inspecting the plurality of chips 22 , the defective chip existing in the second substrate 21 may be repaired using the repair apparatus according to an embodiment of the present invention. Here, repairing the bad chip means separating and removing the bad chip from the second substrate 12 , placing the normal chip at the position where the bad chip is removed, and attaching the normal chip to the second substrate 12 . can do. Here, a position from which the defective chip is removed among the plurality of chips 22 attached to the second substrate 12 may be referred to as a repair position R. Meanwhile, a normal chip used for repair may be supplied from the first substrate 11 .

The first stage 110 may have an upper surface of a predetermined area to seat the first substrate 11 . The first stage 110 may have, for example, a plate shape. The first stage 110 may be fixedly installed on a predetermined table (not shown) or movably installed. The first substrate 11 may be seated on the upper surface of the first stage 110 .

The second stage 120 may be horizontally spaced apart from the first stage 110 . The second stage 120 may have an upper surface of a predetermined area to seat the second substrate 12 . Also, the second stage 120 may have, for example, a plate shape. The second stage 120 may be fixedly installed on the above-described table or movably installed.

The shapes and installation structures of the first and second stages 110 and 120 may be various in addition to the above-described shapes and installation structures. Also, the first and second stages 110 and 120 may contact each other in a horizontal direction.

The laser unit 200 may remove the defective chip from the second substrate 12 by irradiating a laser beam to the defective chip among the chips 22 attached to the second substrate 12 . In addition, the laser unit 200 irradiates a laser beam on the separated chip 21a separated from the first substrate 11 and transferred to the repair position R, so that the chip 21a separated from the second substrate 12 is formed. can be attached. In this case, the separated chip 21a may be referred to as a selected chip 21a.

For example, a solder ball (not shown) may be provided on the lower surface of the defective chip on the second substrate 12 and the chip 21a separated from the first substrate 11 . When a laser beam is irradiated to the defective chip and the separated chip 21a, heat is generated by the laser beam to melt the solder ball. When the solder ball is melted, the coupling between the defective chip and the second substrate 12 may be released, the defective chip may be removed from the second substrate 12 , and the separated chip 21a may be repaired by the second substrate 12 . It can be attached to position (R).

On the other hand, when the coupling between the bad chip and the second substrate 12 is released and when the separated chip 21a is coupled to the second substrate 12 , between the bad chip and the second substrate 12 for a predetermined time. And a molten solder ball may exist between the separated chip 21a and the second substrate 12 .

Therefore, these chips may move in the horizontal direction while irradiating the laser beam, and in severe cases, these chips may scatter.

In addition, after releasing the coupling between the defective chip and the second substrate 12 , the laser beam is blocked in order to transfer the defective chip, and the solder ball starts to re-solidify immediately after the laser beam is blocked.

Therefore, after releasing the coupling between the defective chip and the second substrate 12 , the longer the waiting time until the defective chip is lifted from the second substrate, the more difficult it is to lift the defective chip upward from the second substrate 12 . . In the worst case, the defective chip and the second substrate 12 may be reconnected as the solder ball solidifies after a predetermined time has elapsed.

Therefore, it is important to quickly lift the defective chip after releasing the coupling between the defective chip and the second substrate 12 .

Accordingly, according to an embodiment of the present invention, the picker unit 300 may be formed to transmit a laser beam, and may be disposed in a path of the laser beam. In addition, the laser unit 200 and the picker unit 300 may be aligned on a straight line with their centers. At this time, being aligned on a straight line means that the center of the optical axis of the laser beam traveling downward from the laser unit 200 and the center of the picker unit 300 are aligned on a predetermined straight line in the vertical direction. Accordingly, the laser unit 200 may irradiate a laser beam to the second substrate 12 through the picker unit 300 , and the picker unit 300 contacts and adsorbs the chip while the laser beam is irradiated. This can prevent flow and scattering. In addition, after the laser beam irradiation is completed and before the molten solder ball is solidified again, the chip may be immediately lifted to the picker unit 300 .

Meanwhile, a solder ball (not shown) may be provided on a lower surface of the chip 21a separated from the first substrate 11 . The separated chip 21a is placed at the repair position R of the second substrate 12, a laser beam is irradiated to the separated chip 21a to melt the solder ball, and then the solder ball is cut by blocking the laser beam. Upon solidification, the separated chip 21a can be connected to the wiring and the thin film transistor while attaching it to the second substrate 12 .

The laser unit 200 may be formed to adsorb the chip 21a separated from the first substrate 11 and position it at the repair position of the second substrate. The configuration of the laser unit 200 may vary. For example, the laser unit 200 may include a laser oscillator 210, a reflection mirror 220, and an optical system 230. In this case, the laser oscillator 210 uses one or more sources to generate a predetermined wavelength and A laser beam having a predetermined intensity may be oscillated. The reflection mirror 220 may guide a path of the laser beam. One or more reflection mirrors 220 may be provided. Laser oscillated by the laser oscillator 210 The beam may be reflected by the reflective mirror 220 and may proceed to the optical system 230. The optical system 230 shapes the size and shape of the laser beam reflected from the reflective mirror 220 to the picker unit 300. can proceed.

The laser unit 200 may further include an attenuator (not shown) for controlling the output of the laser beam, a breaker (not shown) for opening and closing the traveling path of the laser beam, and a scanner (not shown) for controlling the traveling direction of the laser beam. can

The size of the laser beam irradiated to the first and second substrates 11 and 12 may correspond to the size of the chips 21 and 22 . That is, the size of the laser beam may be smaller than or equal to the size of the chips 21 and 22 . Accordingly, the plurality of separated chips 21a may be attached to the second substrate 12 one by one.

Of course, the size of the laser beam may be larger than the size of the chips 21 and 22 . Accordingly, the plurality of separated chips 21a may be simultaneously attached to the second substrate 12 .

The laser unit 200 may be movable relative to each of the first and second stages 110 and 120 . That is, by positioning the laser unit 200 above the first stage 110 , the laser beam may be irradiated to the chip 21 attached to the first substrate 11 . And by positioning the laser unit 200 above the second stage 120, the laser beam can be irradiated to the defective chip among the plurality of chips 22 attached to the second substrate 12, and the repair position R ) can be irradiated with a laser beam to the separated chip (21a) located.

The picker unit 300 may adsorb the separated chip 21a and transfer the separated chip 21a from the first substrate 11 to the repair position R of the second substrate 12 . The picker unit 300 may include a window 312 and a glass member 320 at upper and lower portions, respectively. One or more suction holes H1 may be formed through the glass member 320 in the vertical direction. In addition, the window 312 and the glass member 320 may be disposed in a traveling path of the laser beam. Accordingly, the laser beam may proceed through the picker unit 300 and may be irradiated onto the second substrate 12 .

In addition, the picker unit 300 may include a suction member 340 connected to the suction hole H1 described above. Accordingly, while the laser beam proceeds through the picker unit 300 , a suction force due to negative pressure may be formed in the suction hole H1 by the suction member 340 . Accordingly, the picker unit 300 can adsorb the chip 21 adhered to the first substrate 11 to separate it from the first substrate 11 , and maintain the adsorption to the second substrate 12 . The chip 21a can be transferred, and the separated chip 21a raised to the repair position R on the second substrate 12 is irradiated with a laser beam while the separated chip 21a is adsorbed by using a suction force. can support you In addition, the picker unit 300 may adsorb the defective chip separated from the second substrate 12 and remove it from the second substrate 12 . At this time, the picker unit 300 may move upwards of a predetermined discharging means (not shown) to discharge the adsorbed defective chips into the discharging means. Alternatively, the picker unit 300 may suck and discharge defective chips through an internal suction path.

The picker unit 300 has a cylindrical body 310 having an interior open downward, a window provided thereon, and a glass member 320 mounted in an opening at the lower portion of the cylindrical body 310 and having one or more suction holes H1 formed thereon. , may include a suction member 330 connected to the decompression chamber (C) provided in the interior of the cylindrical body (310). In addition, the picker unit 300 includes a actuator (not shown) formed to relatively transport the cylinder 310 in the horizontal and vertical directions with respect to the first and second stages 110 and 120 , and a suction member 330 . ) may include a pressure reducing pump (not shown) connected to. In this case, the picker unit 300 may receive negative pressure from a utility line (not shown) of a facility in which a repair device is installed, for example, a display device manufacturing facility, instead of including a pressure reducing pump.

The cylindrical body 310 may include a column 311 having an inside open in a vertical direction and a window 312 provided in an opening of the upper portion of the column 311 . The window 312 may transmit a laser beam. Through the window 312 , the laser beam may proceed to the inside of the cylindrical body 310 . The glass member 320 may be mounted in an opening at a lower portion of the column 311 . The glass member 320 may transmit a laser beam. The laser beam that has passed through the inside of the column 311 may pass through the glass member 320 and be irradiated onto the first and second substrates 11 and 12 .

The column 311 may be provided with a mounting hole H2 on the side. In addition, since the suction member 330, for example, a pipe is mounted to the column 311 through the mounting hole H2, the pressure reduction chamber C may be provided in the cylinder 310. The decompression chamber (C) may be depressurized to a predetermined pressure. In this case, the predetermined pressure may be a vacuum pressure or a predetermined pressure lower than atmospheric pressure and higher than vacuum pressure. The separated chip 21a may be in contact with the lower surface of the glass member 320 , and the separated chip 21a may be adsorbed to the suction hole H1 . In this case, the glass member 320 may stably support the chips 21 and 22 and the separated chip 21a with the area of the lower surface.

The column 311 may include a second window between the window 312 and the glass member 320 . The second window may separate the interior of the column 311 into an upper space and a lower space, and a decompression chamber C may be formed in the lower space.

4 is an enlarged view of a glass member according to an embodiment of the present invention.

As shown in FIG. 4 , a plurality of suction holes H1 may be formed in the glass member 320 . The plurality of suction holes H1 may be spaced apart from each other in the horizontal direction and may be connected to the decompression chamber C. In this case, the area W2 in which the plurality of suction holes H1 are disposed may be smaller than or equal to the area W1 of the separated chip 21a. Accordingly, when the separated chip 21a is brought into contact with the glass member 320 , a plurality of suction holes H1 may be located within the area W1 of the separated chip 21a. In addition, an area in which the plurality of suction holes H1 are disposed may intersect the traveling path of the laser beam. Accordingly, the chip being irradiated with the laser beam may be adsorbed and supported by the plurality of suction holes H1.

The size of the suction hole H1 may be smaller than the size of the separated chip 21a. For example, the size of the suction hole H1 may be greater than 0 and less than or equal to 10 μm. The size of the glass member 320 may be larger than the size of the separated chip 21a. The size of the glass member 320 may be greater than 1 mm and less than 10 mm. For example, the size of the glass member 320 may be 3 mm. Here, the size means a diameter or a size of one side in the horizontal direction. Of course, the size of the suction hole H1 and the size of the glass member 320 may vary. The number of suction holes H1 may be 1 to 10. Of course, the number of suction holes H1 may vary. In this case, the size of the suction hole H1 may vary according to the number of suction holes H1. That is, as the number of the suction holes H1 increases, the size of the suction holes H1 may be smaller.

Since a plurality of suction holes H1 are formed and spaced apart from each other, suction force may be evenly distributed to a plurality of positions of the separated chips 21a. Accordingly, the separated chip 21a may be stably adsorbed. In addition, it is possible to prevent the separated chip 21a from being inclined.

Meanwhile, an area in which the plurality of suction holes H1 are disposed may be larger than an area of the separated chip 21a. In addition, the size of one or more suction holes among the plurality of suction holes H1, for example, may be larger than the area of the chip 21a in which the inner diameter is separated, and the remaining suction holes are smaller than the area of the chip 21a in which the inner diameter is separated. can be small In this case, the separation distance between the hole with the large inner diameter and the hole with the small inner diameter may be, for example, a predetermined separation distance that can prevent the chip adsorbed on the hole with the small inner diameter from being pulled into the hole with the large inner diameter by the suction force.

At this time, the defective chip can be removed by sucking it into the decompression chamber (C) using a hole with a large inner diameter. The defective chip and the separated chip 21a may be sucked and moved using the small inner diameter hole. Meanwhile, the defective chips sucked into the decompression chamber C may be discharged from the decompression chamber C through a predetermined passage (not shown). In addition, an air curtain or a physical shield may be provided on the lower surface of the second window and the upper surface of the glass member 320 so that the defective chip does not collide with the window and the glass. Here, the physical shield may be formed of, for example, a predetermined material that allows a laser beam and light to pass therethrough, and may be formed, for example, in a mesh shape so as not to remove the suction flow in the decompression chamber (C).

The observation unit 400 may be disposed above the first and second stages 110 and 120 , and may be movable relative to the first and second stages 110 and 120 . The observation unit 400 serves to observe the first and second substrates 11 and 12 , the chips 21 and 22 , and the separated chip 21a. To this end, the observation unit 400 may include, for example, a CCD camera. Of course, the type of the observation unit 400 may be various.

Meanwhile, the repair apparatus may further include a predetermined lighting unit (not shown) and one or more transmission mirrors (not shown). The illumination unit may generate illumination light for observing the separated chip 21a and irradiate it with a transmission mirror. The transmission mirror may be disposed on the optical axis L between the observation unit 400 and the glass member 320 , and may reflect the illumination light generated by the illumination unit toward the picker unit 300 . The illumination light reflected from the transmission mirror may pass through the inside of the picker unit 300 and may be guided to the lower space S of the glass member 320 . In addition, the transmission mirror may transmit the reflected light that is reflected by the illumination light and has passed through the picker unit 300 to guide it to the observation unit 400 . Meanwhile, the transmission mirror may transmit the laser beam generated by the laser unit 200 to the picker unit 300 .

Using the observation unit 400, it is possible to observe and inspect the separated chip 21a in real time while the separated chip 21a is being transferred. The inspection by the observation unit 400 may include a horizontal inspection of the separated chip 21a with respect to the glass member 320 and an in-place inspection of the separated chip 21a with respect to the repair position R.

That is, the observation unit 400 may inspect whether the glass member 320 and the separated chip 21a are horizontal. Also, it may be inspected whether the chip 21a separated by the observation unit 400 is located in the center of the repair position R. Such inspection may be performed in real time.

The observation unit 400 may be supported by the driver and may move in the same direction and at the same speed as the picker unit 300 , and may observe the space S under the glass member 320 in real time.

A repair method according to an embodiment of the present invention will be described with reference to FIGS. 1 to 4 . Hereinafter, content overlapping with the description of the repair apparatus according to the embodiment of the present invention will be briefly described or the description thereof will be omitted.

In the repair method according to an embodiment of the present invention, the process of preparing the first substrate 11 on which the plurality of chips 21 are formed on the first stage 110 , and the second substrate 12 on the second stage 120 . a process of preparing a chip, a process of selecting one chip from among the plurality of chips 21 , a process of adsorbing the selected chip, a process of separating the selected chip 21a from the first substrate, a process of separating the selected chip 21a from the first substrate In the process of transferring the chip 21a, the selected chip 21a is positioned at the repair position R of the second substrate 12, and a laser beam is irradiated to the second substrate 12 while maintaining the adsorption to the selected chip 21a. ) and the process of bonding the second substrate 12 and releasing the adsorption of the selected chip 21a.

First, the first substrate 11 on which the plurality of chips 21 are formed is prepared on the first stage 110 . In this case, the plurality of chips 21 may include micro light emitting diodes. The plurality of chips 21 may be used to repair defects of the second substrate 12 . Meanwhile, by seating the first substrate 11 on the first stage 110 , the first substrate 11 may be provided on the first stage 110 .

Thereafter, the second substrate 12 is provided on the second stage 120 . For example, the second substrate 12 may be seated on the second stage 120 . Meanwhile, the process of preparing the second substrate 12 and the process of preparing the first substrate 11 may be performed simultaneously or sequentially according to a predetermined order.

The second substrate 21 may be a substrate for manufacturing a display device. A plurality of chips 22 may be attached to the second substrate 12 . Some of the plurality of chips 22 may be defective chips.

Accordingly, before the second substrate 12 is provided on the second stage 120 , it is checked whether the plurality of chips 22 are defective, or the second substrate 12 is prepared on the second stage 120 . Thereafter, it is possible to check whether the plurality of chips 22 are defective.

The defective chip may be separated from the second substrate 12 by the laser unit 200 and may be removed from the second substrate 12 by the picker unit 300 . In this case, a position where the defective chip is removed may be referred to as a repair position R.

That is, before the process of adsorbing the selected chip, the process of sucking the bad chip on the second substrate 12 and irradiating the laser beam L to the second substrate 12 while maintaining the adsorption to remove the bad chip and the second It may include a process of releasing the coupling of the substrate 12 and a process of removing the defective chip from the second substrate 12 .

For example, the picker unit 300 is placed on the defective chip, and the picker unit 300 is lowered to bring the glass member 320 into contact with the defective chip. In this case, by connecting the hole H1 formed in the glass member 320 and the defective chip, the suction path and the defective chip may be connected.

Next, the second substrate 12 may be irradiated with a laser beam L to melt the solder balls on the lower surface of the defective chip, thereby releasing the coupling with the second substrate 12 . In this case, the position on the defective chip may be fixed by using a suction path so that the defective chip does not flow on the molten solder ball.

On the other hand, when the suction path is connected to the defective chip through the hole having a large inner diameter, the uncoupled defective chip may be discharged into the suction path as soon as the solder ball is melted and removed.

In addition, when the suction path is connected to the bad chip through the hole with a small inner diameter, the bad chip, which is released from bonding, is adsorbed to the suction path as soon as the melting of the solder ball is completed, and the adsorbed bad chip is transferred to the second substrate 12 ) and can be removed by transporting it away from it.

On the other hand, from the process of sucking the bad chip to the process of releasing the coupling between the bad chip and the second substrate 12 , the laser beam traveling path can be aligned with the suction path, so these processes can be continuously and quickly performed without waiting time. can be done

Thereafter, one chip is selected from among the plurality of chips 21 on the first substrate 11 , and the selected chip is adsorbed. After the picker unit 300 is positioned on the upper side of the first substrate 11 , the picker unit 300 is lowered to bring the glass member 320 into contact with the selected chip. In this case, a negative pressure may be formed in the suction hole H1 provided in the glass member 320 to adsorb the selected chip to the suction hole H1 .

In this case, the suction hole H1 in contact with the selected chip may be a suction hole having a small inner diameter and may be plural in number. Accordingly, there may be a plurality of suction paths provided to the chip selected by the suction hole H1. Accordingly, the selected chip may be connected to the plurality of suction paths, the plurality of suction paths may be depressurized to adsorb the selected chip, and the level of the selected chip may be adjusted.

Thereafter, the picker unit 300 is raised to separate the selected chip from the first substrate. In this case, the plurality of chips 21 may be separated from the first substrate 11 .

Thereafter, the separated chip 21a is transferred to the upper side of the second substrate 12 . That is, while maintaining the suction force, the chip 21a separated from the first substrate 11 is adsorbed and transferred to the upper side of the second substrate 12 .

At this time, there may be a plurality of suction holes H1 in contact with the separated chip 21a, and thus, a plurality of suction paths provided by the plurality of suction holes H1 while the separated chip 21a is transported. can be used to adjust the level of the separated chip 21a.

Thereafter, the selected chip 21a is positioned at the repair position R of the second substrate 12 and the selected chip 21a and the second substrate 12 are coupled to each other while maintaining the adsorption. That is, the chip 21a separated by moving the picker unit 300 is positioned above the repair position R, and the chip 21a separated by lowering the picker unit 300 is placed on the second substrate 12 . can be contacted. In this case, the chip 21a seated on the second substrate 12 may be attached to the repair position R by irradiating a laser beam. That is, the separated chip 21a is positioned at the repair position R of the second substrate 12, and a laser beam is irradiated to the separated chip 21a to melt the solder ball provided in the separated chip 21a. Then, the separated chip 21a can be attached to the second substrate 12 by blocking the laser beam and solidifying the solder ball. Thereafter, the adsorption can be released.

Meanwhile, through the picker unit 300 , the selected chip can be observed from the process of adsorbing the selected chip to the process of releasing the adsorption. That is, by observing the level of the chip separated during the transfer process, if the level is poor, the level can be restored by increasing the suction force. In addition, after being transferred, it is possible to observe the seating state of the chip seated at the repair position R of the second substrate 12 . Thereafter, the position of the seated chip may be corrected according to the observation result. In this case, if the chip 21a is positioned at the center of the repair position R, the correction process may be omitted. If the chip 21a is not located at the center of the repair position R, the chip 21a is sucked up by the picker unit 300 and lifted, then the position of the picker unit 300 is adjusted, and the picker unit 300 is again placed. ) can be corrected by lowering the position. Thereafter, the chip 21a seated on the second substrate 12 may be attached to the repair position R by irradiating the laser beam.

The above embodiments of the present invention are intended to illustrate the present invention, not to limit the present invention. It should be noted that the configurations and methods disclosed in the above embodiments of the present invention will be combined and modified in various forms by combining or intersecting with each other, and modifications thereof may also be considered as the scope of the present invention. That is, the present invention will be embodied in a variety of different forms within the scope of the claims and the technical spirit equivalent thereto, and those skilled in the art to which the present invention pertains can implement various embodiments within the scope of the technical spirit of the present invention. will be able to understand

110: first stage
120: second stage
200: laser unit
300: picker part
320: glass member
400: observation unit

Claims (15)

A repair apparatus for transferring a chip formed on a first substrate to a second substrate, comprising:
a first stage formed to support the first substrate to which a normal chip for a repair process is attached;
a second stage formed to support the second substrate on which a repair position is formed by removing a repair target chip;
a laser unit disposed to irradiate a laser beam to at least one of the first substrate and the second substrate;
It is disposed in the traveling path of the laser beam so as to transmit the laser beam, separates the chip from the first substrate while maintaining the adsorption, and adsorbs the chip separated from the first substrate, thereby forming the second substrate. A repair apparatus including a; The method according to claim 1,
The laser unit and the picker unit are aligned on a straight line,
The picker unit is provided with a window and a glass member at upper and lower portions,
One or more suction holes are formed to pass through the glass member,
The window and the glass member are disposed in a traveling path of the laser beam. The method according to claim 1,
The picker unit,
The interior is opened downwardly, the cylinder body is provided with a window on the upper portion;
a glass member mounted on an opening in the lower portion of the cylindrical body and having one or more suction holes;
A repair apparatus comprising a; a suction member connected to the decompression chamber inside the cylinder. 4. The method of claim 3,
A plurality of suction holes are formed in the glass member,
The plurality of suction holes are connected to the decompression chamber,
An area in which the plurality of suction holes are disposed intersects a traveling path of the laser beam. 5. The method according to claim 4,
An area in which the plurality of suction holes are disposed is smaller than or equal to an area of the separated chip. 5. The method according to claim 4,
An area in which the plurality of suction holes are disposed is larger than an area of the separated chip,
A size of at least one suction hole among the plurality of suction holes is larger than an area of the separated chip, and a size of the remaining suction holes is smaller than an area of the separated chip. The method according to claim 1,
and an observation unit configured to observe at least one of the separated chip, the first substrate, and the second substrate through the picker unit. providing a first substrate on which a plurality of chips are formed on a first stage;
providing a second substrate on a second stage;
selecting one or more chips among the plurality of chips and adsorbing the selected chips;
separating the selected chip from the first substrate while maintaining adsorption;
transferring the selected chip to an upper side of the second substrate;
locating the selected chip at a repair position of the second substrate and irradiating a laser beam to the second substrate while maintaining adsorption, thereby bonding the selected chip and the second substrate;
and a process of releasing the adsorption of the selected chip. 9. The method of claim 8,
Prior to the process of adsorbing the selected chip,
sucking the defective chip on the second substrate;
releasing the coupling between the defective chip and the second substrate by irradiating a laser beam to the second substrate while maintaining the adsorption;
and removing the defective chip from the second substrate. 10. The method of claim 9,
The process of removing the defective chip from the second substrate comprises:
and removing the uncoupled defective chip by discharging the defective chip connected to the defective chip into a suction path for sucking the defective chip. 10. The method of claim 9,
The process of removing the defective chip from the second substrate comprises:
adsorbing the uncoupled defective chip to a suction path that is connected to the defective chip and sucks the defective chip;
and transferring the adsorbed defective chip away from the second substrate. 12. The method of claim 10 or 11,
In the process of sucking the bad chip on the second substrate, and in the process of releasing the coupling between the bad chip and the second substrate,
A repair method for aligning a traveling path of a laser beam with the suction path. 9. The method of claim 8,
The process of adsorbing the selected chip is,
connecting the selected chip with a plurality of suction paths;
and a process of decompressing the plurality of suction paths. 14. The method of claim 13,
The process of transferring the selected chip is,
and adjusting a level of the selected chip by using the plurality of suction paths. 9. The method of claim 8,
and observing the selected chip through a picker unit that provides a suction path to the selected chip from the process of adsorbing the selected chip to the process of releasing the adsorption.

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