KR102440236B1 - Organic light emitting display device and method for manufacturing of the same - Google Patents

Abstract

An organic light emitting diode display according to an embodiment of the present invention includes a substrate including a display area and a power pad part. The display area includes a thin film transistor positioned on the display area and a first electrode connected to the thin film transistor. The power pad unit includes a power pad electrode positioned on the power pad unit. An organic layer, a second electrode, and a capping layer are positioned on the display area and the power pad part. The second electrode is positioned on the organic layer, and the capping layer is positioned on the second electrode. The organic layer includes a first exposed portion exposing the power pad electrode, and the second electrode is connected to the power pad electrode through the first exposed portion.

Description

Organic light emitting display device and manufacturing method thereof

The present invention relates to an organic light emitting display device and a method for manufacturing the same.

Recently, various flat panel display devices capable of reducing weight and volume, which are disadvantages of a cathode ray tube (CRT), have been developed. Examples of the flat panel display include a liquid crystal display (LCD), a field emission display (FED), a plasma display panel (PDP), and an organic light emitting display (OLED). Organic Light Emitting Display Device) and the like.

Among them, the organic light emitting display device is a self-luminous display device that emits light by electrically exciting an organic compound. Since the organic light emitting display device does not require a backlight used in the liquid crystal display device, it is possible to be lightweight and thin and to simplify the process. In addition, it is possible to manufacture at low temperature, has a high response speed with a response speed of 1 ms or less, and exhibits characteristics such as low power consumption, wide viewing angle, and high contrast.

The organic light emitting display device includes a light emitting layer made of an organic material between an anode electrode and a cathode electrode, so that holes supplied from the anode electrode and electrons received from the cathode electrode are combined in the light emitting layer to form an exciton, a hole-electron pair, and then again When the exciton returns to the ground state, it emits light by the energy generated.

1 and 2 are views showing a manufacturing method of an organic light emitting display device for each process. Referring to FIG. 1 , a first electrode 15 , which is an anode electrode, is formed on a substrate 10 provided with a power pad unit 20 . An organic layer 30 such as a light emitting layer for light emission is formed on the first electrode 15 . The organic layer 30 is masked and deposited so as not to be formed on the power pad unit 20 through the first mask. The power pad unit 20 masks so that the organic layer 30 is not formed because a subsequent second electrode must make contact.

Next, referring to FIG. 2 , a second electrode 40 serving as a cathode is formed on the substrate 10 on which the organic layer 30 is formed by using a second mask. The second electrode 40 is directly in contact with and connected to the exposed power pad part 20 . Then, the capping layer 50 is continuously formed using the second mask to manufacture the organic light emitting diode display.

Here, since the second electrode 40 and the capping layer 50 have the same size, they may be formed as a single mask, but since the organic layer 30 is an organic material and has a different size, the mask cannot be used together. Accordingly, a mask replacement process of forming the organic layer 30 using the first mask and then replacing it with a second mask is accompanied, thereby increasing the process time and increasing the manufacturing cost due to the use of two masks. have.

The present invention provides an organic light emitting diode display capable of reducing a process time by omitting a mask replacement process.

In addition, the present invention provides an organic light emitting display device capable of reducing manufacturing cost by using a single mask.

In order to achieve the above object, an organic light emitting display device according to an embodiment of the present invention includes a substrate including a display area and a power pad part. The display area includes a thin film transistor positioned on the display area and a first electrode connected to the thin film transistor. The power pad unit includes a power pad electrode positioned on the power pad unit. An organic layer, a second electrode, and a capping layer are positioned on the display area and the power pad part. The second electrode is positioned on the organic layer, and the capping layer is positioned on the second electrode. The organic layer includes a first exposed portion exposing the power pad electrode, and the second electrode is connected to the power pad electrode through the first exposed portion.

For example, the organic layer, the second electrode, and the capping layer cover from the display area to the power pad part. The first exposed portion further includes a mixing portion in contact with the power pad electrode and in which the organic layer and materials of the second electrode are mixed. The side of the mixing unit contacts the second electrode and the organic layer. The capping layer includes a second exposed portion exposing the mixing portion.

In addition, in the method of manufacturing an organic light emitting display device according to an embodiment of the present invention, a substrate including a display area and a power pad part is prepared, a thin film transistor and a first electrode connected to the thin film transistor are formed on the display area, A power pad electrode is formed on the power pad part. Then, an organic layer is formed on the display area and the power pad part using a mask, and a laser beam is irradiated to the organic layer to expose the power pad electrode. A second electrode and a capping layer are formed on the display area and the power pad part by reusing the mask to contact the second electrode and the power pad electrode.

For example, the process of irradiating the laser beam is performed in a vacuum atmosphere, and the organic layer, the second electrode, and the capping layer are formed using the same mask.

In addition, in the method of manufacturing an organic light emitting display device according to an embodiment of the present invention, a substrate including a display area and a power pad part is prepared, a thin film transistor and a first electrode connected to the thin film transistor are formed on the display area, A power pad electrode is formed on the power pad part. Then, an organic layer, a second electrode, and a capping layer are continuously formed on the display area and the power pad part using the same mask. A laser beam is irradiated to a region corresponding to the power pad electrode to form a mixing part in which the organic layer material and the second electrode material are mixed, thereby bringing the second electrode into contact with the power pad electrode.

For example, when the laser beam is irradiated, the organic film layer and the second electrode are melted to mix the organic film layer material and the second electrode material, and when the laser beam is irradiated, the mixed organic film layer material and the second electrode material are solidified and mixed An addition is formed. The organic layer has a first exposed portion exposing the power pad electrode, and the mixing portion is formed on the first exposed portion to contact the organic layer and the second electrode. The capping layer is formed with a second exposed portion exposing the mixed portion by a laser beam. The laser beam irradiation process is performed in an atmospheric pressure atmosphere.

In addition, the organic light emitting diode display according to an embodiment of the present invention includes a substrate including a display area and a power pad part. The display area includes a thin film transistor positioned on the display area, a first electrode, an organic layer, a second electrode, and a capping layer. The first electrode is connected to the thin film transistor, the organic layer is disposed on the first electrode, and the second electrode is disposed on the organic layer. A capping layer is located on the second electrode. The power pad electrode is positioned on the power pad part. In particular, it further includes a conductive member in contact with the second electrode and the power pad electrode.

For example, the conductive member may be any one or more of silver, copper, aluminum, chromium, molybdenum, and titanium.

In addition, in the method of manufacturing an organic light emitting display device according to an embodiment of the present invention, a substrate including a display area and a power pad part is prepared, a thin film transistor and a first electrode connected to the thin film transistor are formed on the display area, A power pad electrode is formed on the power pad part. Then, an organic layer, a second electrode, and a capping layer are continuously formed in the display area using the same mask. A conductive material is formed on the power pad part to form a conductive member contacting the second electrode and the power pad electrode.

For example, the conductive member is melted using a laser beam after laminating a conductive material to contact the second electrode and the power pad electrode. The conductive member is formed of silver dots (Ag dots).

An organic light emitting display device and a method for manufacturing the same according to an embodiment of the present invention include depositing an organic layer, a second electrode, and a capping layer using a single mask, and then connecting the second electrode and the power pad electrode using a laser. , it is possible to reduce the number of masks, and to omit unnecessary chambers such as separation and unloading of masks, thereby reducing manufacturing costs. In addition, since the process time of mask replacement can be reduced, there is an advantage that productivity can be improved.

1 and 2 are views showing a manufacturing method of an organic light emitting display device for each process.
3 is a schematic block diagram of an organic light emitting display device;
4 is a first exemplary diagram illustrating a circuit configuration of a sub-pixel;
5 is a second exemplary diagram illustrating a circuit configuration of a sub-pixel;
6 is a plan view illustrating an organic light emitting display device according to an embodiment of the present invention.
7 is a cross-sectional view illustrating an organic light emitting display device according to a first embodiment of the present invention.
8A to 8E are views illustrating a manufacturing method of an organic light emitting display device according to a process step according to the first embodiment of the present invention;
9 is a view showing an organic light emitting display device according to a second embodiment of the present invention.
10A to 10C are views illustrating a method of manufacturing an organic light emitting display device according to a second embodiment of the present invention by process;
11 is a view showing an organic light emitting display device according to a third embodiment of the present invention.
12A to 12C are views illustrating a manufacturing method of an organic light emitting display device according to a third embodiment of the present invention by process;

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a schematic block diagram of an organic light emitting diode display, FIG. 4 is a first exemplary diagram illustrating a circuit configuration of a sub-pixel, and FIG. 5 is a second exemplary diagram illustrating a circuit configuration of a sub-pixel.

As shown in FIG. 3 , the organic light emitting display device includes an image processor 60 , a timing controller 70 , a data driver 80 , a gate driver 85 , and a display panel 90 .

The image processing unit 60 outputs a data enable signal DE along with the data signal DATA supplied from the outside. The image processing unit 60 may output one or more of a vertical synchronization signal, a horizontal synchronization signal, and a clock signal in addition to the data enable signal DE, but these signals are omitted for convenience of description. The image processing unit 60 is formed in the form of an integrated circuit (IC) on the system circuit board.

The timing controller 70 receives the data signal DATA along with the data enable signal DE or the driving signal including the vertical synchronization signal, the horizontal synchronization signal and the clock signal from the image processing unit 60 .

The timing controller 70 includes a gate timing control signal GDC for controlling an operation timing of the gate driver 85 and a data timing control signal DDC for controlling an operation timing of the data driver 80 based on the driving signal. to output The timing controller 70 is formed in the form of an IC on the control circuit board.

The data driver 80 samples and latches the data signal DATA supplied from the timing controller 70 in response to the data timing control signal DDC supplied from the timing controller 70 , converts it into a gamma reference voltage, and outputs it . The data driver 80 outputs the data signal DATA through the data lines DL1 to DLn. The data driver 80 is formed in the form of an IC on the data circuit board.

The gate driver 85 outputs a gate signal while shifting the level of the gate voltage in response to the gate timing control signal GDC supplied from the timing controller 70 . The gate driver 85 outputs a gate signal through the gate lines GL1 to GLm. The gate driver 85 is formed in the form of an IC on the gate circuit board or in the form of a gate in panel on the display panel 90 . A portion of the gate driver 85 formed in the gate-in-panel method is a shift register or the like.

The display panel 90 displays an image in response to the data signal DATA and the gate signal supplied from the data driver 80 and the gate driver 85 . The display panel 90 includes sub-pixels SP displaying an image.

The sub-pixels SP include a red sub-pixel, a green sub-pixel, and a blue sub-pixel, or include a white sub-pixel, a red sub-pixel, a green sub-pixel, and a blue sub-pixel. The sub-pixels SP may have one or more different emission areas according to emission characteristics.

As shown in FIG. 4 , one sub-pixel includes a switching transistor SW, a driving transistor DR, a capacitor Cst, a compensation circuit CC, and an organic light emitting diode (OLED). The organic light emitting diode OLED operates to emit light according to a driving current formed by the driving transistor DR.

The switching transistor SW performs a switching operation so that the data signal supplied through the first data line DL1 is stored as a data voltage in the capacitor Cst in response to the gate signal supplied through the first gate line GL1 . The driving transistor DR operates so that a driving current flows between the high potential power line EVDD and the low potential power line EVSS according to the data voltage stored in the capacitor Cst. The compensation circuit CC is a circuit for compensating the threshold voltage of the driving transistor DR.

The compensation circuit CC is composed of one or more thin film transistors and a capacitor. Since the configuration of the compensation circuit CC varies greatly depending on the compensation method, detailed examples and descriptions thereof will be omitted. The thin film transistor is implemented based on a low-temperature polysilicon (LTPS), amorphous silicon (a-Si), oxide, or organic semiconductor layer.

As shown in FIG. 5 , when the compensation circuit CC is included, the sub-pixel further includes a signal line and a power supply line for driving the compensation thin film transistor and supplying a specific signal or power.

The added signal line may be defined as the first-second gate line GL1b for driving the compensation thin film transistor included in the sub-pixel. In addition, the added power line may be defined as a third power line INIT for initializing a specific node of the sub-pixel to a specific voltage. However, this is only an example and is not limited thereto.

Meanwhile, in FIGS. 4 and 5 , the compensation circuit CC is included in one sub-pixel as an example. However, when the subject of compensation is located outside the sub-pixel, such as the data driver 80 , the compensation circuit CC may be omitted. That is, one sub-pixel is basically composed of a 2T (Transistor) 1C (Capacitor) structure including a switching transistor (SW), a driving transistor (DR), a capacitor (Cst), and an organic light emitting diode (OLED), but a compensation circuit When (CC) is added, it may be variously configured as 3T1C, 4T2C, 5T2C, 6T1C, and the like.

6 is a plan view showing an organic light emitting display device according to an embodiment of the present invention, FIG. 7 is a cross-sectional view showing an organic light emitting display device according to the first embodiment of the present invention, and FIGS. 8A to 8E are views of the present invention It is a diagram showing the manufacturing method of the organic light emitting display device according to the first embodiment for each process.

Referring to FIG. 6 , the organic light emitting display device 100 according to an embodiment of the present invention includes a display area A/A in which an image is realized through light emission including a plurality of sub-pixels on a substrate 110 ; , and a non-display area N/A other than the display area A/A. As described above, the display area A/A implements an image through light emission from organic light emitting diodes (OLEDs). The organic light emitting diode (OLED) may include red (R), green (G), and blue (B) sub-pixels, or may additionally include white (W) sub-pixels. In addition, since all organic light emitting diodes (OLEDs) are composed of white (W) sub-pixels, full color may be realized through a color filter. The configuration of the sub-pixel of the present invention is not particularly limited, and various known structures can be applied. The non-display area N/A includes a low-potential pad VPE for supplying low-potential power to the second electrode 190 that is a cathode of the display area A/A, and a portion of the display area A/A. and a data driver (D-IC) for supplying data to the data line. One side of the second electrode 190 is in contact with the low-potential pad VPE to supply low-potential power to the second electrode 190 .

Referring to FIG. 7 , the organic light emitting diode display 100 according to the first embodiment of the present invention includes a display area A/A and a power pad unit EVSSP.

A thin film transistor TFT is positioned on the substrate 110 in the display area A/A. The thin film transistor (TFT) includes a semiconductor layer 112 , a gate electrode 118 , and source/drain electrodes 126 and 124 , and a gate insulating layer 116 is disposed between the semiconductor layer 112 and the gate electrode 118 . The interlayer insulating layer 122 is positioned between the gate electrode 118 and the source/drain electrodes 126 and 124 . In the first embodiment of the present invention, a top-gate type thin film transistor in which the gate electrode 118 is positioned on the semiconductor layer 112 is shown as an example, but the present invention is not limited thereto, and the gate electrode A bottom-gate (Bottom-Gate) type thin film transistor in which 118 is located under the semiconductor layer 112 is also applicable.

Meanwhile, the power pad electrode VPE is positioned on the same layer as the source/drain electrodes 126 and 124 of the thin film transistor TFT. The power pad electrode VPE is positioned on the power pad part EVSSP and is formed of the same material as the source/drain electrodes 126 and 124 . In the first embodiment of the present invention, it is disclosed that the power pad electrode VPE is formed on the same layer using the same material as the source/drain electrodes 126 and 124 . A power pad electrode VPE may be formed on the layer.

Meanwhile, the overcoat layer 128 is positioned on the substrate 110 on which the thin film transistor (TFT) and the power pad electrode (VPE) are formed. The overcoat layer 128 protects the thin film transistor (TFT) and planarizes a step caused by the thin film transistor (TFT). The first electrode 130 is positioned on the overcoat layer 128 . The first electrode 130 is an anode electrode, and has a high work function, such as Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Indium Cerium Oxide (ICO), or Zinc Oxide (ZnO), and is transparent through which light can pass. It can be formed of a conductive material. The first electrode 130 penetrates through the overcoat layer 128 and is electrically connected to the drain electrode 124 of the thin film transistor TFT through a via hole 126 exposing the drain electrode 124 of the thin film transistor TFT. is connected to

A bank layer 132 is positioned on the first electrode 130 . The bank layer 132 may be a pixel defining layer that defines a pixel by exposing a portion of the first electrode 130 . An organic layer 134 is positioned on the bank layer 132 and the exposed first electrode 130 . The organic layer 134 may include a light emitting layer that emits light by combining electrons and holes, and may include a hole injection layer, a hole transport layer, an electron transport layer, or an electron injection layer. The second electrode 140 is positioned on the substrate 110 on which the organic layer 134 is formed. The second electrode 140 is a cathode electrode and may be made of magnesium (Mg), calcium (Ca), aluminum (Al), silver (Ag), or an alloy thereof having a low work function.

The display device according to the first embodiment of the present invention includes a bottom emission type in which light emitted from the organic layer 134 is emitted toward a substrate 110 , and a second electrode 140 in which light emitted from the organic emission layer 134 is emitted. ) may be a top emission type that is emitted in the direction. Here, in the case of a bottom light emitting display device, the first electrode 130 is formed to transmit light, and the second electrode 140 is formed to a thickness sufficient to reflect light. On the other hand, in the case of a top emission type display device, the first electrode 130 may further include a reflective layer formed of any one of aluminum (Al), silver (Ag), or nickel (Ni) at the lower portion, and the second electrode 140 . ) is made of a thickness that is thin enough to allow light to pass therethrough, and preferably has a thickness of 1 to 50 Å.

A capping layer 150 covering an upper shape of the second electrode 140 is positioned on the substrate 110 on which the second electrode 140 is formed. Here, to cover along the upper shape of the second electrode 140 means to be formed along the step coverage of the second electrode 140 . The capping layer 150 serves to protect the elements below and prevent moisture from penetrating into the organic layer 134 , and may be made of a polymer resin such as polyacrylic or polyimide. Although not shown, a protective layer made of an inorganic material such as silicon oxide or silicon nitride may be further formed on the capping layer 150 .

In addition, the organic layer 134 including the exposed portion 135 that covers the power pad electrode VPE and exposes the power pad electrode VPE is positioned on the power pad part EVSSP. The second electrode 140 is formed on the power pad part EVSSP on which the power pad electrode VPE is formed to extend from the display area A/A. The second electrode 140 is in contact with the power pad electrode VPE exposed by the exposed portion 135 . A capping layer 150 is formed on the second electrode 140 to extend from the display area A/A.

Hereinafter, a method of manufacturing the organic light emitting display device according to the first embodiment of the present invention having the structure of FIG. 7 will be described.

Referring to FIG. 8A , a semiconductor layer 112 is formed by stacking a silicon semiconductor or an oxide semiconductor on a substrate 110 and patterning it with a first mask. A gate insulating layer 116 is formed on the substrate 110 including the semiconductor layer 112 . The gate insulating layer 116 is formed of silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, and is formed by chemical vapor deposition (CVD), physical vapor deposition (PECVD), or the like. Next, a metal material is deposited on the substrate 110 and patterned with a second mask to form a gate electrode 118 . The gate electrode 118 is selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It is formed of any one or an alloy thereof. In addition, the gate electrode 118 is a group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be a multi-layer made of any one selected from or alloys thereof. For example, the gate electrode 118 may be a double layer of molybdenum/aluminum-neodymium or molybdenum/aluminum.

Next, an interlayer insulating layer 122 is formed on the substrate 110 on which the gate electrode 118 is formed. The interlayer insulating layer 122 is formed of silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, and is formed by chemical vapor deposition (CVD), physical vapor deposition (PECVD), or the like. Next, a photoresist is applied on the interlayer insulating layer 122 and the interlayer insulating layer 122 is etched using a third mask. The interlayer insulating layer 122 is etched to form contact holes CH exposing a portion of the semiconductor layer 112 . A metal material is laminated on the substrate 110 on which the interlayer insulating layer 122 is formed and patterned with a fourth mask to form a drain electrode 124 and a source electrode 126 in the display area A/A, and a power pad part ( A power pad electrode (VPE) is formed on the EVSSP).

The drain electrode 124 , the source electrode 126 , and the power pad electrode VPE may be formed of a single layer or multiple layers, and the drain electrode 124 , the source electrode 126 , and the power pad electrode VPE may have a single layer. In the case, any one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or these may be made of an alloy of In addition, when the drain electrode 124 , the source electrode 126 , and the power pad electrode VPE are multi-layered, a double layer of molybdenum/aluminum-neodymium, titanium/aluminum/titanium, molybdenum/aluminum/molybdenum or molybdenum/aluminum -Can be made of a triple layer of neodymium/molybdenum. The drain electrode 124 and the source electrode 126 are respectively connected to the semiconductor layer 112 through the contact holes CH. Accordingly, a thin film transistor (TFT) including the semiconductor layer 112 , the gate electrode 118 , the drain electrode 124 , and the source electrode 126 is formed.

Next, referring to FIG. 8B , an overcoat layer 128 is formed on the substrate 110 including the thin film transistor (TFT). The overcoat layer 128 may be a planarization layer for alleviating the step difference in the lower structure, and is made of an organic material such as polyimide, benzocyclobutene series resin, or acrylate. The overcoat layer 128 may be formed by a method such as spin on glass (SOG) in which the organic material is coated in a liquid form and then cured. Next, the overcoat layer 128 is etched using a fifth mask to form via holes 126 . Next, a transparent conductive film is laminated on the overcoat layer 128 and patterned with a sixth mask to form the first electrode 130 . As an anode, the first electrode 130 may be formed of a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO). When the first electrode 130 is a reflective electrode, the first electrode 130 further includes a reflective layer. The reflective layer may be made of aluminum (Al), copper (Cu), silver (Ag), nickel (Ni), or an alloy thereof, preferably APC (silver/palladium/copper alloy). Accordingly, the first electrode 130 fills the via hole 126 and may be connected to the drain electrode 124 of the thin film transistor TFT.

Next, a bank layer 132 is formed on the substrate 110 including the first electrode 130 . The bank layer 132 is a pixel defining layer that defines a pixel by exposing a portion of the first electrode 130 . The bank layer 132 is made of an organic material such as polyimide, benzocyclobutene series resin, or acrylate. An opening OP exposing the first electrode 130 is formed in the bank layer 132 using the seventh mask.

Next, referring to FIG. 8C , an organic layer 134 is formed on the first electrode 130 exposed by the opening OP of the bank layer 132 . In more detail, the eighth mask IOMK is aligned on the substrate 110 on which the first electrode 130 is formed in a vacuum chamber, and an organic material is deposited using a vacuum deposition method. The organic material is deposited on a predetermined area of the substrate 110 by the eighth mask IOMK to form the organic layer 134 . Accordingly, the organic layer 134 is formed in the power pad part EVSSP together with the display area A/A.

The organic layer 134 includes a light emitting layer that emits light by combining electrons and holes, and may include a hole injection layer, a hole transport layer, an electron transport layer, or an electron injection layer. In addition, when the organic layer 134 emits white light, the red (R), green (G), and blue (B) light emitting layers are stacked over the entire display area (A/A) without patterning to realize white, White may be realized by stacking a blue (B) light emitting layer and a yellow green (YG) light emitting layer on the entire display area A/A. In the present invention, all known stacked structures of the organic layer 134 may be applied as long as white color can be realized.

Next, referring to FIG. 8D , the laser irradiation device is aligned on the substrate 110 on which the organic layer 134 is formed with the eighth mask aligned, and then a laser beam is applied to the power pad unit EVSSP. is irradiated to remove a portion of the organic layer 134 on the power pad electrode VPE. That is, a laser beam is irradiated to a portion of the organic layer 134 located on the surface of the power pad electrode VPE to burn and remove the organic layer 134 . Accordingly, the exposed portion 135 exposing the surface of the power pad electrode VPE is formed in the organic layer 134 . In the first embodiment of the present invention, the laser irradiation process is performed in a vacuum so that the organic layer is not exposed to the outside.

Next, referring to FIG. 8E , the second electrode 140 and the capping layer 150 are continuously formed on the substrate 110 on which the exposed portion 135 is formed. In more detail, the eighth mask IOMK previously used for depositing the organic layer 140 is transferred to the inorganic layer deposition chamber for forming the second electrode 140 in a state in which it is continuously aligned with the substrate 110 . Then, the second electrode 140 is deposited again using the eighth mask IOMK. Next, in order to form the capping layer 150 on the second electrode 140 , the eighth mask IOMK is transferred to the organic layer deposition chamber while being continuously aligned with the substrate 110 . Then, the capping layer 150 is formed using the eighth mask IOMK again. The second electrode 140 is formed on the entire surface of the substrate 110 and is a cathode electrode made of magnesium (Mg), calcium (Ca), aluminum (Al), silver (Ag), or an alloy thereof having a low work function. When the second electrode 140 is a transmissive electrode, it is formed to be thin enough to transmit light, and when it is a reflective electrode, it is formed to be thick enough to reflect light. The capping layer 150 is formed of a polymer resin such as polyacrylic or polyimide.

Conventionally, the process of forming the organic film layer and the second electrode required one mask for depositing the organic film layer and one mask for depositing the inorganic film of the second electrode. After depositing the organic film layer, the mask is separated and unloaded. A process of loading and attaching a mask to deposit the film was required.

However, in the first embodiment of the present invention, after depositing the organic film layer using the inorganic film deposition mask forming the second electrode, a laser irradiation process was performed on the portion where the organic film layer is to be removed. Then, the second electrode and the capping layer were deposited by successively using the inorganic film deposition mask. Accordingly, by forming the organic layer, the second electrode, and the capping layer using a single mask, the number of masks can be reduced and unnecessary chambers such as separation and unloading of masks can be omitted, thereby reducing manufacturing costs. . In addition, since the process time of mask replacement can be reduced, there is an advantage that productivity can be improved.

9 is a view showing an organic light emitting display device according to a second embodiment of the present invention, and FIGS. 10A to 10C are views showing a manufacturing method of the organic light emitting display device according to the second embodiment of the present invention for each process. Hereinafter, detailed descriptions of the same structures and processes as those of the first embodiment will be omitted.

Referring to FIG. 9 , in the organic light emitting diode display 200 according to the second exemplary embodiment of the present invention, a thin film transistor TFT is positioned on a substrate 210 in the display area A/A. The thin film transistor (TFT) includes a semiconductor layer 212 , a gate electrode 218 , and source/drain electrodes 226 and 224 , and a gate insulating layer 216 is disposed between the semiconductor layer 212 and the gate electrode 218 . and an interlayer insulating layer 222 is positioned between the gate electrode 218 and the source/drain electrodes 226 and 224 . The power pad electrode VPE is positioned on the same layer as the source/drain electrodes 226 and 224 of the thin film transistor TFT. The power pad electrode VPE is positioned on one side of the display area A/A, and is formed of the same material as the source/drain electrodes 226 and 224 .

On the other hand, the overcoat layer 228 is positioned on the substrate 210 on which the thin film transistor (TFT) and the power pad electrode (VPE) are formed, and the first electrode 230 is positioned on the overcoat layer 228 . The first electrode 230 penetrates through the overcoat layer 228 and is electrically connected to the drain electrode 224 of the thin film transistor TFT through a via hole 126 exposing the drain electrode 224 of the thin film transistor TFT. is connected to A bank layer 232 is positioned on the first electrode 230 , and a portion of the first electrode 230 is exposed. An organic layer 234 is positioned on the bank layer 232 and the exposed first electrode 230 . The second electrode 240 is positioned on the substrate 210 on which the organic layer 234 is formed, and a capping layer 250 covering the upper shape of the second electrode 240 is positioned.

In addition, the organic layer 234 including the first exposed portion 235 covering the power pad electrode VPE and exposing the power pad electrode VPE is positioned on the power pad part EVSSP. The second electrode 240 is formed on the power pad part EVSSP on which the power pad electrode VPE is formed to extend from the display area A/A. The second electrode 240 is in contact with the power pad electrode VPE exposed by the first exposed portion 235 . Here, the mixing part 245 in which the materials of the second electrode 240 and the organic layer 234 are mixed is positioned on the surface of the power pad electrode VPE. In the mixing unit 245 , the second electrode 240 and the organic layer 234 are melted and mixed by a laser beam, and a detailed description will be given later in the manufacturing method. A capping layer 250 is formed on the second electrode 240 to extend from the display area A/A. The capping layer 250 includes a second exposed portion 255 exposing the lower mixing portion 245 in a region corresponding to the power pad electrode VPE.

Hereinafter, a method of manufacturing the organic light emitting display device according to the second embodiment of the present invention having the structure of FIG. 9 will be described as follows. Hereinafter, descriptions overlapping those of the above-described first embodiment will be briefly described.

Referring to FIG. 10A , a semiconductor layer 212 is formed by stacking a silicon semiconductor or an oxide semiconductor on a substrate 210 and patterning it with a first mask. A gate insulating layer 216 is formed on the substrate 210 including the semiconductor layer 212 . Next, a metal material is deposited on the substrate 210 and patterned with a second mask to form a gate electrode 218 . An interlayer insulating layer 222 is formed on the substrate 210 on which the gate electrode 218 is formed. Next, a photoresist is applied on the interlayer insulating layer 222 and the interlayer insulating layer 222 is etched using a third mask to form contact holes CH exposing a portion of the semiconductor layer 212 . A metal material is laminated on the substrate 210 on which the interlayer insulating layer 222 is formed and patterned with a fourth mask to form a drain electrode 224 and a source electrode 226 in the display area A/A, and a power pad part ( A power pad electrode (VPE) is formed on the EVSSP). Accordingly, a thin film transistor (TFT) including the semiconductor layer 212 , the gate electrode 218 , the drain electrode 224 , and the source electrode 226 is formed.

Next, an overcoat layer 228 is formed on the substrate 210 including the thin film transistor (TFT). Next, the overcoat layer 228 is etched using a fifth mask to form via holes 226 . Next, a transparent conductive film is laminated on the overcoat layer 228 and patterned with a sixth mask to form a first electrode 230 . Accordingly, the first electrode 230 fills the via hole 226 and may be connected to the drain electrode 224 of the thin film transistor TFT. Next, the bank layer 232 is formed on the substrate 210 including the first electrode 230 , and an opening OP exposing the first electrode 230 to the bank layer 232 using a seventh mask. ) to form

Next, referring to FIG. 10B , an eighth mask IOMK is aligned on the substrate 210 in which the opening OP is formed, and an organic material is deposited using a vacuum deposition method. The organic material is deposited on a predetermined area of the substrate 210 by the eighth mask IOMK to form the organic layer 234 . Accordingly, the organic layer 234 is formed on the power pad part EVSSP together with the display area A/A. Next, the second electrode 240 and the capping layer 250 are formed on the substrate 210 on which the organic layer 234 is formed with the eighth mask aligned. In more detail, the eighth mask IOMK previously used to deposit the organic layer 234 is transferred to the inorganic layer deposition chamber for forming the second electrode 240 in a state in which it is continuously aligned with the substrate 210 . Then, the second electrode 240 is deposited again using the eighth mask IOMK. Then, the eighth mask IOMK is transferred to the organic layer deposition chamber for forming the capping layer 250 in a state in which it is continuously aligned with the substrate 210 . Then, the capping layer 250 is deposited again using the eighth mask IOMK.

Next, referring to FIG. 10C , after the eighth mask is separated from the substrate 210 , the laser irradiation apparatus is aligned on the substrate 210 on which the capping layer 250 is formed. And a part of the organic layer 234 , a part of the second electrode 240 , and a part of the capping layer 250 positioned on the power pad electrode VPE by irradiating a laser beam to the power pad part EVSSP apply heat to The capping layer 250 irradiated with the laser beam is removed by high heat of the laser beam, and the second electrode 240 is melted because it is a metal. A part of the organic film layer 234 located between the second electrode 240 and the power pad electrode VPE is also melted and evaporated. It is mixed with the electrode 240 . When the laser beam is irradiated, the mixing part 245 is formed as the metal material of the second electrode and the organic material of the organic layer that are melted and mixed are solidified again.

The mixing part 245 is positioned on the surface of the power pad electrode VPE, and has a structure in which the side surface contacts the second electrode 240 and the organic layer 234 . Accordingly, the mixing unit 245 is electrically connected to the second electrode 240 . In addition, the mixing unit 245 is formed of a mixture of the metal material of the second electrode and the organic material of the organic layer, and electrically connects the power pad electrode VPE and the second electrode 240 . Meanwhile, a portion of the capping layer 250 is removed by a laser beam in a region corresponding to the power pad electrode VPE to form a second exposed portion 255 exposing the lower mixing portion 245 .

In the second embodiment of the present invention, the laser irradiation process has an advantage that it can be performed at normal pressure instead of under vacuum because the device is protected by the capping layer 250 . In the present invention, the laser beam may be irradiated as one beam or may be irradiated with a plurality of beams. The number of laser beams is not particularly limited.

As described above, the conventional process of forming the organic film layer and the second electrode required one mask for depositing the organic film layer and one mask for depositing the inorganic film of the second electrode. After loading, a process of loading and attaching a mask for depositing an inorganic film was required.

However, in the second embodiment of the present invention, the organic film, the second electrode, and the capping layer are deposited using a single inorganic film deposition mask, and a laser irradiation process is performed so that the second electrode is connected to the power pad electrode. Accordingly, by forming the organic layer, the second electrode, and the capping layer using a single mask, the number of masks can be reduced and unnecessary chambers such as separation and unloading of masks can be omitted, thereby reducing manufacturing costs. . In addition, since the process time of mask replacement can be reduced, there is an advantage that productivity can be improved.

11 is a view showing an organic light emitting display device according to a third embodiment of the present invention, and FIGS. 12A to 12C are views showing a manufacturing method of the organic light emitting display device according to the third embodiment of the present invention for each process.

Referring to FIG. 11 , in the organic light emitting diode display 300 according to the third exemplary embodiment of the present invention, a thin film transistor TFT is positioned on a substrate 310 in the display area A/A. The thin film transistor (TFT) includes a semiconductor layer 312 , a gate electrode 318 , and source/drain electrodes 326 and 324 , and a gate insulating layer 316 is disposed between the semiconductor layer 312 and the gate electrode 318 . An interlayer insulating layer 322 is positioned between the gate electrode 318 and the source/drain electrodes 326 and 324 . The power pad electrode VPE is positioned on the same layer as the source/drain electrodes 326 and 324 of the thin film transistor TFT. The power pad electrode VPE is positioned at one side of the display area A/A, and is formed of the same material as the source/drain electrodes 326 and 324 .

On the other hand, the overcoat layer 328 is positioned on the substrate 310 on which the thin film transistor (TFT) and the power pad electrode (VPE) are formed, and the first electrode 330 is positioned on the overcoat layer 328 . The first electrode 330 penetrates through the overcoat layer 328 and is electrically connected to the drain electrode 324 of the thin film transistor TFT through a via hole 326 exposing the drain electrode 324 of the thin film transistor TFT. is connected to A bank layer 332 is positioned on the first electrode 330 , and a portion of the first electrode 330 is exposed. An organic layer 334 is positioned on the bank layer 332 and the exposed first electrode 330 . The second electrode 340 is positioned on the substrate 310 on which the organic layer 334 is formed, and a capping layer 350 covering the upper shape of the second electrode 340 is positioned. In addition, the power pad electrode VPE and the conductive member 380 connecting the power pad electrode VPE and the second electrode 340 are positioned in the power pad part EVSSP.

Hereinafter, a method of manufacturing an organic light emitting display device according to a third embodiment of the present invention having the structure of FIG. 11 will be described. Hereinafter, descriptions overlapping with the above-described first and second embodiments will be briefly described.

Referring to FIG. 12A , a semiconductor layer 312 is formed by stacking a silicon semiconductor or an oxide semiconductor on a substrate 310 and patterning it with a first mask. A gate insulating layer 316 is formed on the substrate 310 including the semiconductor layer 312 . Next, a metal material is deposited on the substrate 310 and patterned with a second mask to form a gate electrode 318 . An interlayer insulating layer 322 is formed on the substrate 310 on which the gate electrode 318 is formed. Next, a photoresist is applied on the interlayer insulating layer 322 and the interlayer insulating layer 322 is etched using a third mask to form contact holes CH exposing a portion of the semiconductor layer 312 . A metal material is laminated on the substrate 310 on which the interlayer insulating layer 322 is formed and patterned with a fourth mask to form a drain electrode 324 and a source electrode 326 in the display area A/A, and a power pad part ( A power pad electrode (VPE) is formed on the EVSSP). Accordingly, a thin film transistor (TFT) including a semiconductor layer 312 , a gate electrode 318 , a drain electrode 324 , and a source electrode 326 is formed.

Next, an overcoat layer 328 is formed on the substrate 310 including the thin film transistor (TFT). Next, the overcoat layer 328 is etched using a fifth mask to form via holes 326 . Next, a transparent conductive film is laminated on the overcoat layer 328 and patterned with a sixth mask to form a first electrode 330 . Accordingly, the first electrode 330 fills the via hole 326 and may be connected to the drain electrode 324 of the thin film transistor TFT. Next, a bank layer 332 is formed on the substrate 310 including the first electrode 230 , and an opening OP exposing the first electrode 330 to the bank layer 332 using a seventh mask. ) to form

Next, referring to FIG. 12B , an eighth mask OMK is aligned on the substrate 210 in which the opening OP is formed, and an organic material is deposited using a vacuum deposition method. Here, the eighth mask is an organic material deposition mask, not the inorganic material deposition mask used in the above-described first and second embodiments, and has a size corresponding to the size of the display area A/A. Accordingly, the organic material is deposited on the display area A/A. The organic material is deposited on the display area A/A of the substrate 310 by the eighth mask OMK to form the organic layer 334 . Next, the second electrode 340 is formed on the substrate 310 on which the organic layer 334 is formed while the eighth mask OMK is aligned. In more detail, the eighth mask OMK previously used for depositing the organic layer 334 is transferred to the inorganic layer deposition chamber for forming the second electrode 340 in a state in which it is continuously aligned with the substrate 310 . Then, the second electrode 340 is continuously deposited using the eighth mask OMK again. Next, the eighth mask OMK is transferred to the organic layer deposition chamber for forming the capping layer 350 while being continuously aligned with the substrate 310 . Then, the capping layer 350 is deposited again using the eighth mask OMK.

Next, referring to FIG. 10C , after the eighth mask is separated from the substrate 310 , a conductive member 380 is formed on the power pad part EVSSP of the substrate 310 on which the capping layer 350 is formed. The conductive member 380 contacts the power pad electrode VPE of the power pad part EVSSP and the side surface of the second electrode 340 of the display area A/A to electrically connect them. The conductive member 380 is formed by depositing a conductive material, for example, silver, copper, aluminum, chromium, molybdenum, titanium, etc., on the substrate 310 and then irradiating a laser beam to partially melt it to form a power pad electrode (VPE) and to be in contact with the second electrode 340 . As another method of forming the conductive member 380 , it may be formed by silver dotting on the substrate 310 .

As described above, the conventional process of forming the organic film layer and the second electrode required one mask for depositing the organic film layer and one mask for depositing the inorganic film of the second electrode. After loading, a process of loading and attaching a mask for depositing an inorganic film was required.

However, in the third embodiment of the present invention, after depositing the organic film, the second electrode, and the capping layer using a single organic film deposition mask, a separate conductive member is used to connect the second electrode to the power pad electrode. did. Accordingly, by forming the organic layer, the second electrode, and the capping layer using a single mask, the number of masks can be reduced and unnecessary chambers such as separation and unloading of masks can be omitted, thereby reducing manufacturing costs. . In addition, since the process time of mask replacement can be reduced, there is an advantage that productivity can be improved.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the technical configuration of the present invention can be changed to other specific forms by those skilled in the art to which the present invention pertains without changing the technical spirit or essential features of the present invention. It will be appreciated that this may be practiced. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. In addition, the scope of the present invention is indicated by the claims to be described later rather than the above detailed description. In addition, all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention.

100: organic light emitting display device 110: substrate
TFT: thin film transistor 130: first electrode
134: organic layer 140: second electrode
150: capping layer VPE: power pad electrode
A/A : Display area EVSSP : Power pad part

Claims (20)

a substrate including a display area and a power pad unit;
a thin film transistor positioned on the display area, and a first electrode connected to the thin film transistor;
a power pad electrode positioned on the power pad part; and
an organic film layer positioned on the display area and the power pad part, a second electrode positioned on the organic film layer, and a capping layer positioned on the second electrode;
The organic layer includes a first exposed portion covering an edge of the power pad electrode and exposing a central portion of the power pad electrode,
and the second electrode is connected to the power pad electrode through the first exposed part. The method of claim 1,
The organic layer, the second electrode, and the capping layer cover the display area to the power pad part. The method of claim 1,
and a mixing part in contact with the power pad electrode and in which materials of the organic layer and the second electrode are mixed in the first exposed part. 4. The method of claim 3,
An organic light emitting display device in which a side surface of the mixing unit contacts the second electrode and the organic layer. 4. The method of claim 3,
The capping layer includes a second exposed portion exposing the mixing portion. preparing a substrate including a display area and a power pad unit;
forming a thin film transistor on the display area, a first electrode connected to the thin film transistor, and forming a power pad electrode on the power pad unit;
forming an organic layer on the display area and the power pad part using a mask;
exposing the power pad electrode by irradiating a laser beam to the organic layer;
A method of manufacturing an organic light emitting display device in which a second electrode and a capping layer are formed on the display area and the power pad part by reusing the mask to contact the second electrode and the power pad electrode. 7. The method of claim 6,
The process of irradiating the laser beam is a method of manufacturing an organic light emitting display device performed in a vacuum atmosphere. 8. The method of claim 7,
The organic layer, the second electrode, and the capping layer are formed using the same mask. preparing a substrate including a display area and a power pad unit;
forming a thin film transistor on the display area, a first electrode connected to the thin film transistor, and forming a power pad electrode on the power pad unit;
continuously forming an organic layer, a second electrode, and a capping layer on the display area and the power pad part using the same mask;
Manufacturing of an organic light emitting display device in which a laser beam is irradiated to an area corresponding to the power pad electrode to form a mixing part in which the organic layer material and the second electrode material are mixed to contact the second electrode and the power pad electrode Way. 10. The method of claim 9,
When the laser beam is irradiated, the organic layer and the second electrode are melted to mix the organic layer material and the second electrode material, and when the laser beam is irradiated, the mixed organic layer material and the second electrode A method of manufacturing an organic light emitting display device in which a material is solidified to form a mixing part. 10. The method of claim 9,
The organic layer includes a first exposed portion exposing the power pad electrode, and the mixing portion is formed on the first exposed portion to contact the organic layer and the second electrode. 10. The method of claim 9,
In the capping layer, a second exposed portion exposing the mixing portion is formed by the laser beam. 10. The method of claim 9,
The laser beam irradiation process is a method of manufacturing an organic light emitting display device that is performed in an atmospheric pressure atmosphere. a substrate including a display area and a power pad unit;
a thin film transistor positioned on the display area, a first electrode connected to the thin film transistor, an organic film layer positioned on the first electrode, a second electrode positioned on the organic film layer, and positioned on the second electrode a capping layer;
a power pad electrode positioned on the power pad part; and
a conductive member in contact with the second electrode and the power pad electrode;
a side surface of the second electrode is exposed at a boundary between the display area and the power pad part;
The conductive member is in contact with the exposed side surface of the second electrode. 15. The method of claim 14,
The conductive member may be any one or more of silver, copper, aluminum, chromium, molybdenum, and titanium. preparing a substrate including a display area and a power pad unit;
forming a thin film transistor on the display area, a first electrode connected to the thin film transistor, and forming a power pad electrode on the power pad unit;
continuously forming an organic layer, a second electrode, and a capping layer in the display area using the same mask;
A method of manufacturing an organic light emitting display device comprising forming a conductive material on the power pad part to form a conductive member contacting the second electrode and the power pad electrode. 17. The method of claim 16,
The method of manufacturing an organic light emitting display device, wherein the conductive member is melted using a laser beam after laminating a conductive material to contact the second electrode and the power pad electrode. 17. The method of claim 16,
The method of manufacturing an organic light emitting display device in which the conductive member is formed of silver dots (Ag dots). The method of claim 1,
an overcoat layer disposed between the thin film transistor and the first electrode;
a bank layer disposed between the first electrode and the organic layer
further comprising,
a side surface of the overcoat layer and a side surface of the bank layer are exposed at a boundary between the display area and the power pad part;
The organic layer is in contact with an exposed side surface of the overcoat layer and a side surface of the bank layer. 15. The method of claim 14,
an overcoat layer disposed between the thin film transistor and the first electrode;
a bank layer disposed between the first electrode and the organic layer
further comprising,
a side surface of the overcoat layer, a side surface of the bank layer, a side surface of the organic layer, and a side surface of the capping layer are exposed at a boundary between the display area and the power pad part;
The conductive member is in contact with an exposed side surface of the overcoat layer, a side surface of the bank layer, a side surface of the organic layer, and a side surface of the capping layer.

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