KR102430129B1 - 스캐테로메트리 계측에서의 공정 변동의 근본 원인 분석 - Google Patents

스캐테로메트리 계측에서의 공정 변동의 근본 원인 분석 Download PDF

Info

Publication number
KR102430129B1
KR102430129B1 KR1020187027579A KR20187027579A KR102430129B1 KR 102430129 B1 KR102430129 B1 KR 102430129B1 KR 1020187027579 A KR1020187027579 A KR 1020187027579A KR 20187027579 A KR20187027579 A KR 20187027579A KR 102430129 B1 KR102430129 B1 KR 102430129B1
Authority
KR
South Korea
Prior art keywords
metrology
landscape
wafer
process variation
variation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020187027579A
Other languages
English (en)
Korean (ko)
Other versions
KR20180112064A (ko
Inventor
탈 마르시아노
마이클 이 아델
마크 기노프커
바락 브린골츠
다나 클레인
탈 이츠코비치
비드야 라마나단
자네이 캠프
Original Assignee
케이엘에이 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 케이엘에이 코포레이션 filed Critical 케이엘에이 코포레이션
Publication of KR20180112064A publication Critical patent/KR20180112064A/ko
Application granted granted Critical
Publication of KR102430129B1 publication Critical patent/KR102430129B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2823—Imaging spectrometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/40—Measuring the intensity of spectral lines by determining density of a photograph of the spectrum; Spectrography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J2003/283—Investigating the spectrum computer-interfaced

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020187027579A 2016-02-25 2016-11-01 스캐테로메트리 계측에서의 공정 변동의 근본 원인 분석 Active KR102430129B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662299693P 2016-02-25 2016-02-25
US62/299,693 2016-02-25
PCT/US2016/059954 WO2017146786A1 (en) 2016-02-25 2016-11-01 Analyzing root causes of process variation in scatterometry metrology

Publications (2)

Publication Number Publication Date
KR20180112064A KR20180112064A (ko) 2018-10-11
KR102430129B1 true KR102430129B1 (ko) 2022-08-05

Family

ID=59685497

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187027579A Active KR102430129B1 (ko) 2016-02-25 2016-11-01 스캐테로메트리 계측에서의 공정 변동의 근본 원인 분석

Country Status (8)

Country Link
US (1) US10203200B2 (enExample)
EP (1) EP3420327A4 (enExample)
JP (1) JP7011592B2 (enExample)
KR (1) KR102430129B1 (enExample)
CN (1) CN108700463B (enExample)
IL (1) IL260855B (enExample)
TW (1) TWI713703B (enExample)
WO (2) WO2017146785A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018038892A1 (en) * 2016-08-26 2018-03-01 Applied Materials, Inc. Self-healing semiconductor wafer processing
JP6877541B2 (ja) 2016-11-14 2021-05-26 ケーエルエー コーポレイション 一体型メトロロジツールを有する機能性が強化されたリソグラフィシステム
EP3451061A1 (en) 2017-09-04 2019-03-06 ASML Netherlands B.V. Method for monitoring a manufacturing process
US11158548B2 (en) 2018-03-19 2021-10-26 Kla-Tencor Corporation Overlay measurement using multiple wavelengths
US11519869B2 (en) * 2018-03-20 2022-12-06 Kla Tencor Corporation Methods and systems for real time measurement control
US10962951B2 (en) * 2018-06-20 2021-03-30 Kla-Tencor Corporation Process and metrology control, process indicators and root cause analysis tools based on landscape information
KR102873433B1 (ko) 2018-11-21 2025-10-17 케이엘에이 코포레이션 단일 셀 그레이 산란계측 오버레이 타겟 및 다양한 조명 파라미터를 사용한 이들의 측정
US11249400B2 (en) 2018-12-14 2022-02-15 Kla Corporation Per-site residuals analysis for accurate metrology measurements
US11156846B2 (en) * 2019-04-19 2021-10-26 Kla Corporation High-brightness illumination source for optical metrology
KR102813063B1 (ko) * 2019-06-26 2025-05-26 케이엘에이 코포레이션 반도체 디바이스의 제조에서 피드포워드 공정 제어를 위한 시스템 및 방법
KR102921020B1 (ko) * 2019-11-28 2026-01-30 케이엘에이 코포레이션 계측 랜드스케이프에 기초한 계측 최적화를 위한 시스템 및 방법
US11454894B2 (en) 2020-09-14 2022-09-27 Kla Corporation Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof
US12222199B2 (en) 2020-11-05 2025-02-11 Kla Corporation Systems and methods for measurement of misregistration and amelioration thereof
US11861824B1 (en) 2022-02-03 2024-01-02 Kla Corporation Reference image grouping in overlay metrology
CN120063470B (zh) * 2025-04-29 2025-08-12 上海大学 一种非对称多谐振光纤传感器及其制备方法
CN120183583B (zh) * 2025-05-16 2025-09-02 常州润来科技有限公司 一种稀土微合金化铜管铸坯微孔洞性能测试方法及系统

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6986280B2 (en) * 2002-01-22 2006-01-17 Fei Company Integrated measuring instrument
US8257546B2 (en) * 2003-04-11 2012-09-04 Applied Materials, Inc. Method and system for monitoring an etch process
US7463364B2 (en) * 2003-07-31 2008-12-09 Ler Technologies, Inc. Electro-optic sensor
TWI254190B (en) * 2003-09-22 2006-05-01 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
US7397596B2 (en) * 2004-07-28 2008-07-08 Ler Technologies, Inc. Surface and subsurface detection sensor
CN102483582B (zh) * 2009-08-24 2016-01-20 Asml荷兰有限公司 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底
TWI417942B (zh) * 2009-12-17 2013-12-01 Ind Tech Res Inst 二維陣列疊對圖樣組之設計方法、疊對誤差量測方法及其量測系統
US8666703B2 (en) * 2010-07-22 2014-03-04 Tokyo Electron Limited Method for automated determination of an optimally parameterized scatterometry model
NL2009294A (en) * 2011-08-30 2013-03-04 Asml Netherlands Bv Method and apparatus for determining an overlay error.
US10255385B2 (en) 2012-03-28 2019-04-09 Kla-Tencor Corporation Model optimization approach based on spectral sensitivity
GB2500670A (en) * 2012-03-29 2013-10-02 Ibm Method of fabrication of a micro-optics device with curved surface defects
WO2014062972A1 (en) 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
TWI598972B (zh) * 2012-11-09 2017-09-11 克萊譚克公司 減少散射量測疊對量測技術中演算法之不準確
WO2014138522A1 (en) * 2013-03-08 2014-09-12 Kla-Tencor Corporation Pupil plane calibration for scatterometry overlay measurement
WO2015031337A1 (en) * 2013-08-27 2015-03-05 Kla-Tencor Corporation Removing process-variation-related inaccuracies from scatterometry measurements
CN105765461B (zh) * 2013-10-02 2018-01-05 Asml荷兰有限公司 用于获得与工业过程有关的诊断信息的方法和设备
SG11201703585RA (en) 2014-11-25 2017-06-29 Kla Tencor Corp Analyzing and utilizing landscapes
US9903711B2 (en) * 2015-04-06 2018-02-27 KLA—Tencor Corporation Feed forward of metrology data in a metrology system

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Bringoltz Barak.，Accuracy in optical overlay metrology，Proceed ings of SPIE，Society of Photo-Optical Instrumentation Engineers, 2016.02.24.
Gutjahr Karsten.，Root cause analysis of overlay metrology excur sions with scatterometry overlay technology，Proceedings of SPIE, Society of Photo-Optical Instrumentation Engineers, 2016.02.24.

Also Published As

Publication number Publication date
EP3420327A4 (en) 2019-10-16
JP2019512869A (ja) 2019-05-16
JP7011592B2 (ja) 2022-01-26
US20180023950A1 (en) 2018-01-25
TW201740098A (zh) 2017-11-16
US10203200B2 (en) 2019-02-12
IL260855B (en) 2021-09-30
CN108700463A (zh) 2018-10-23
CN108700463B (zh) 2021-03-23
KR20180112064A (ko) 2018-10-11
TWI713703B (zh) 2020-12-21
WO2017146786A1 (en) 2017-08-31
WO2017146785A1 (en) 2017-08-31
EP3420327A1 (en) 2019-01-02

Similar Documents

Publication Publication Date Title
TWI713703B (zh) 分析散射術計量中製程變異之根本原因
TWI639060B (zh) 自散射量測移除製程變化相關之不準確
US11067904B2 (en) System for combined imaging and scatterometry metrology
TWI711096B (zh) 光學計量學之方法，電腦程式產品，及計量學模組
TWI798248B (zh) 在計量量測中之機器學習
CN105830069B (zh) 依据要求的目标及工艺灵敏度分析
US20190004438A1 (en) Device metrology targets and methods
KR101779636B1 (ko) 고급 공정 제어 기술의 최적화
US10565697B2 (en) Utilizing overlay misregistration error estimations in imaging overlay metrology
JP2019512869A5 (enExample)
US20090153818A1 (en) Method and apparatus for extracting dose and focus from critical dimension data
TWI773894B (zh) 程序及計量控制、基於景觀資訊之程序指標及根本原因分析工具
WO2019045780A1 (en) QUICK SETTING OF METROLOGY MEASUREMENT PARAMETERS BASED ON PROCESS VARIATION
US9851300B1 (en) Decreasing inaccuracy due to non-periodic effects on scatterometric signals
KR102362671B1 (ko) 오버레이 계측에서 높은 정확도를 달성하기 위한 이미징 기술의 진폭 및 위상 비대칭 추정
US10365230B1 (en) Scatterometry overlay based on reflection peak locations

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
A302 Request for accelerated examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 4