JP7011592B2 - スキャトロメトリ計測におけるプロセス変動の根本原因の解析 - Google Patents

スキャトロメトリ計測におけるプロセス変動の根本原因の解析 Download PDF

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JP7011592B2
JP7011592B2 JP2018544846A JP2018544846A JP7011592B2 JP 7011592 B2 JP7011592 B2 JP 7011592B2 JP 2018544846 A JP2018544846 A JP 2018544846A JP 2018544846 A JP2018544846 A JP 2018544846A JP 7011592 B2 JP7011592 B2 JP 7011592B2
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measurement
landscape
manufacturing process
parameter
wafer
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Japanese (ja)
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JP2019512869A (ja
JP2019512869A5 (enExample
Inventor
タル マルチアーノ
マイケル イー アデル
マーク ギノフカー
バラク ブリンゴルツ
ダナ クライン
タル イツコヴィッチ
ヴィドヤ ラマナサン
ヤナイ カンプ
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2823—Imaging spectrometer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/40—Measuring the intensity of spectral lines by determining density of a photograph of the spectrum; Spectrography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J2003/283—Investigating the spectrum computer-interfaced

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2018544846A 2016-02-25 2016-11-01 スキャトロメトリ計測におけるプロセス変動の根本原因の解析 Active JP7011592B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662299693P 2016-02-25 2016-02-25
US62/299,693 2016-02-25
PCT/US2016/059954 WO2017146786A1 (en) 2016-02-25 2016-11-01 Analyzing root causes of process variation in scatterometry metrology

Publications (3)

Publication Number Publication Date
JP2019512869A JP2019512869A (ja) 2019-05-16
JP2019512869A5 JP2019512869A5 (enExample) 2019-12-12
JP7011592B2 true JP7011592B2 (ja) 2022-01-26

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Family Applications (1)

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JP2018544846A Active JP7011592B2 (ja) 2016-02-25 2016-11-01 スキャトロメトリ計測におけるプロセス変動の根本原因の解析

Country Status (8)

Country Link
US (1) US10203200B2 (enExample)
EP (1) EP3420327A4 (enExample)
JP (1) JP7011592B2 (enExample)
KR (1) KR102430129B1 (enExample)
CN (1) CN108700463B (enExample)
IL (1) IL260855B (enExample)
TW (1) TWI713703B (enExample)
WO (2) WO2017146785A1 (enExample)

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WO2018038892A1 (en) * 2016-08-26 2018-03-01 Applied Materials, Inc. Self-healing semiconductor wafer processing
JP6877541B2 (ja) 2016-11-14 2021-05-26 ケーエルエー コーポレイション 一体型メトロロジツールを有する機能性が強化されたリソグラフィシステム
EP3451061A1 (en) 2017-09-04 2019-03-06 ASML Netherlands B.V. Method for monitoring a manufacturing process
US11158548B2 (en) 2018-03-19 2021-10-26 Kla-Tencor Corporation Overlay measurement using multiple wavelengths
US11519869B2 (en) * 2018-03-20 2022-12-06 Kla Tencor Corporation Methods and systems for real time measurement control
US10962951B2 (en) * 2018-06-20 2021-03-30 Kla-Tencor Corporation Process and metrology control, process indicators and root cause analysis tools based on landscape information
KR102873433B1 (ko) 2018-11-21 2025-10-17 케이엘에이 코포레이션 단일 셀 그레이 산란계측 오버레이 타겟 및 다양한 조명 파라미터를 사용한 이들의 측정
US11249400B2 (en) 2018-12-14 2022-02-15 Kla Corporation Per-site residuals analysis for accurate metrology measurements
US11156846B2 (en) * 2019-04-19 2021-10-26 Kla Corporation High-brightness illumination source for optical metrology
KR102813063B1 (ko) * 2019-06-26 2025-05-26 케이엘에이 코포레이션 반도체 디바이스의 제조에서 피드포워드 공정 제어를 위한 시스템 및 방법
KR102921020B1 (ko) * 2019-11-28 2026-01-30 케이엘에이 코포레이션 계측 랜드스케이프에 기초한 계측 최적화를 위한 시스템 및 방법
US11454894B2 (en) 2020-09-14 2022-09-27 Kla Corporation Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof
US12222199B2 (en) 2020-11-05 2025-02-11 Kla Corporation Systems and methods for measurement of misregistration and amelioration thereof
US11861824B1 (en) 2022-02-03 2024-01-02 Kla Corporation Reference image grouping in overlay metrology
CN120063470B (zh) * 2025-04-29 2025-08-12 上海大学 一种非对称多谐振光纤传感器及其制备方法
CN120183583B (zh) * 2025-05-16 2025-09-02 常州润来科技有限公司 一种稀土微合金化铜管铸坯微孔洞性能测试方法及系统

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Also Published As

Publication number Publication date
EP3420327A4 (en) 2019-10-16
JP2019512869A (ja) 2019-05-16
US20180023950A1 (en) 2018-01-25
TW201740098A (zh) 2017-11-16
US10203200B2 (en) 2019-02-12
IL260855B (en) 2021-09-30
CN108700463A (zh) 2018-10-23
CN108700463B (zh) 2021-03-23
KR20180112064A (ko) 2018-10-11
TWI713703B (zh) 2020-12-21
KR102430129B1 (ko) 2022-08-05
WO2017146786A1 (en) 2017-08-31
WO2017146785A1 (en) 2017-08-31
EP3420327A1 (en) 2019-01-02

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