KR102426873B1 - A light emitting device package - Google Patents

Abstract

In an embodiment, a substrate, a light emitting device disposed on the substrate, a first region disposed on an upper surface of the light emitting device and overlapping the upper surface of the light emitting device in a vertical direction, and an upper surface of the light emitting device in the vertical direction A wavelength conversion layer including a non-overlapping second region, a first molding member surrounding the light emitting device and in contact with a side surface of the light emitting device and a portion and a side surface of a lower surface of the wavelength conversion member, and the first molding member and a second molding member disposed thereon.

Description

Light emitting device package {A LIGHT EMITTING DEVICE PACKAGE}

The embodiment relates to a light emitting device package.

Light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) using group 3-5 or group 2-6 compound semiconductor materials of semiconductors have developed red, red, and Various colors such as green, blue, and ultraviolet light can be realized, and white light with good efficiency can be realized by using fluorescent materials or combining colors. It has the advantages of response speed, safety, and environmental friendliness.

Transmitting module of optical communication means, light emitting diode backlight replacing Cold Cathode Fluorescenece Lamp (CCFL) constituting the backlight of LCD (Liquid Crystal Display) display device, white light emitting diode lighting that can replace fluorescent or incandescent light bulbs Applications are expanding to devices, automobile headlights and traffic lights.

Light emitting device packages are widely used in lighting devices and display devices. A light emitting device package may include a body, lead frames positioned in the body, and a light emitting device (eg, LED) positioned on any one of the lead frames.

The embodiment provides a light emitting device package capable of preventing light leakage and improving luminous efficiency.

A light emitting device package according to an embodiment includes a substrate; a light emitting device disposed on the substrate; a wavelength conversion layer disposed on the upper surface of the light emitting element and including a first region overlapping the upper surface of the light emitting element in a vertical direction, and a second region not overlapping with the upper surface of the light emitting element in the vertical direction; a first molding member surrounding the light emitting device and in contact with a side surface of the light emitting device and a portion and a side surface of a lower surface of the wavelength conversion member; and a second molding member disposed on the first molding member.

The first molding member may be a non-conductive molding member that reflects light.

The second molding member may be a light-transmitting, non-conductive molding member.

The first region may be a region of a lower surface of the wavelength conversion member in contact with the upper surface of the light emitting device, and the second region may be a remaining area of a lower surface of the wavelength conversion member spaced apart from the upper surface of the light emitting device.

The total area of the lower surface of the wavelength conversion member may be greater than the total area of the upper surface of the light emitting device, and the total area of the lower surface of the wavelength conversion member may be 1.1 times to 2 times the total area of the upper surface of the light emitting device.

The wavelength conversion member may protrude in a horizontal direction with respect to each side of the upper surface of the light emitting device.

An upper surface of the first molding member may be positioned on the same plane as an upper surface of the wavelength conversion member.

The upper surface of the first molding member may be positioned below the upper surface of the wavelength conversion member, and may be positioned above the lower surface of the wavelength conversion member.

The upper surface of the first molding member may be positioned below the upper surface of the wavelength conversion member, and may be positioned on the same plane as the lower surface of the wavelength conversion member.

The light emitting device package may include: a first conductive layer and a second conductive layer disposed on the substrate to be spaced apart from each other; and a wire electrically connecting the light emitting device and the second conductive layer, wherein the light emitting device may be disposed on the first conductive layer. A portion of the wire may be exposed outside the first molding member, and the second molding member may wrap a portion of the exposed wire.

The second molding member may have a convex curved lens shape.

The distance between the upper surface of the light emitting device and the first interface may be the same as the distance between the upper surface and the second interface of the light emitting device, and the first interface is the interface between the upper surface of the wavelength conversion member and the lower surface of the second molding member. , the second interface may be an interface between an upper surface of the first molding member and a lower surface of the second molding member. or the distance between the upper surface of the light emitting element and the second interface is shorter than the distance between the upper surface and the first interface of the light emitting element, and the second interface is the interface between the upper surface of the first molding member and the lower surface of the second molding member. , the first interface may be an interface between an upper surface of the wavelength conversion member and a lower surface of the second molding member. Alternatively, the second boundary surface between the upper surface of the first molding member and the lower surface of the second molding member may be located on the same plane as a third boundary surface between the lower surface of the wavelength conversion member and the first molding member.

The embodiment may prevent light leakage and improve luminous efficiency.

1 is a perspective view of a light emitting device package according to an embodiment.
FIG. 2 is a cross-sectional view taken in the AB direction of the light emitting device package shown in FIG. 1 .
3 is a cross-sectional view of a light emitting device package according to another embodiment.
4 is a cross-sectional view of a light emitting device package according to another embodiment.
5 is a cross-sectional view of a light emitting device package according to another embodiment.
6A is an enlarged view of a first molding member and a second molding member according to an exemplary embodiment;
6B is an enlarged view of a first molding member and a second molding member according to another exemplary embodiment.
6C is an enlarged view of a first molding member and a second molding member according to another exemplary embodiment.
FIG. 7 is a view for explaining a size between the light emitting device and the wavelength conversion member shown in FIG. 2 .
8A illustrates a beam pattern of a light emitting device package when the first and second molding members are light-transmitting.
FIG. 8B shows a beam pattern of the light emitting device package according to the embodiment shown in FIG. 2 .
9 shows the results of the luminous flux experiment for Cases 1 to 3.
10 is a plan view of a light emitting device package according to another embodiment.
11 is a cross-sectional view of the light emitting device package shown in FIG. 10 in a CD direction.
12 is a cross-sectional view in the EF direction of the light emitting device package shown in FIG. 10 .
13 illustrates a wavelength conversion member 210a according to another exemplary embodiment.
14 is a plan view of a light emitting device package according to another embodiment.
15 is a cross-sectional view in the CD direction of the light emitting device package shown in FIG. 14 .
FIG. 16 is a cross-sectional view in the EF direction of the light emitting device package shown in FIG. 14 .
17 is a cross-sectional view of the light emitting device shown in FIG. 2 according to an embodiment.
18 is a cross-sectional view of the light emitting device shown in FIG. 3 according to an embodiment.

Hereinafter, the embodiments will be clearly revealed through the accompanying drawings and the description of the embodiments. In the description of an embodiment, each layer (film), region, pattern or structure is “on” or “under” the substrate, each layer (film), region, pad or pattern. In the case of being described as being formed on, "on" and "under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criteria for the upper / upper or lower / lower of each layer will be described with reference to the drawings.

In the drawings, sizes are exaggerated, omitted, or schematically illustrated for convenience and clarity of description. Also, the size of each component does not fully reflect the actual size. Also, like reference numerals denote like elements throughout the description of the drawings.

1 is a perspective view of a light emitting device package 100 according to an embodiment, and FIG. 2 is a cross-sectional view taken along an AB direction of the light emitting device package 100 shown in FIG. 1 .

1 and 2 , the light emitting device package 100 includes a substrate 110 , first and second conductive layers 122 and 124 , contact vias 125 and 127 , and heat dissipation electrodes 126 and 128 . ), a light emitting device 130 , a wire 135 , a wavelength conversion member 140 , a Zener diode 150 , a first molding member 160 , and a second molding member 170 .

The substrate 110 may be a substrate having good insulation or thermal conductivity, such as a silicon substrate, silicon carbide (SiC), aluminum nitride (AlN), or a ceramic substrate (eg, Al ₂ O ₃ ). Also, the substrate 110 may be formed of a resin material having high reflectivity. Also, the substrate 110 may have a single-layer structure or a structure in which a plurality of layers are stacked.

The first and second conductive layers 122 and 124 may be disposed on the upper surface of the substrate 110 to be electrically separated from each other and spaced apart from each other. The first and second conductive layers 122 and 124 may have a lead frame structure, but are not limited thereto.

For example, the first and second conductive layers 122 and 124 may be formed of a conductive material such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), It may be formed of one of platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), or an alloy thereof, and may have a single-layer or multi-layer structure. The first and second conductive layers 122 and 124 may reflect light emitted from the light emitting device 130 .

The heat dissipation electrodes 126 and 128 may be disposed to be spaced apart from each other on the lower surface of the substrate 110 , and may radiate heat generated from the light emitting device 130 . In addition, the heat dissipation electrodes 126 and 128 may provide power to the first and second conductive layers 122 and 124 through via contacts 125 and 127 which will be described later.

The via contacts 125 and 127 pass through the substrate 110 to electrically connect the first and second conductive layers 122 and 124 and the heat dissipation electrodes 126 and 128 . For example, the first via contact 125 may electrically connect the first conductive layer 122 and the corresponding one 126 of the heat dissipation electrodes 126 and 128 , and the second via contact 127 may have a second conductivity. The layer 124 may be electrically connected to the corresponding other one of the heat dissipation electrodes 126 and 128 .

The light emitting device 130 may be disposed on the first conductive layer 122 or the second conductive layer 124 , but is not limited thereto. For example, in another embodiment, the light emitting device 130 may be disposed on the upper surface of the substrate 110 .

The light emitting device 130 may be a vertical light emitting diode (light emitting diode), but is not limited thereto. For example, the light emitting device 130 may be a vertical light emitting diode that emits light of a blue wavelength, but is not limited thereto. In another embodiment, light of a red or green wavelength may be emitted.

17 is a cross-sectional view of the light emitting device 130 shown in FIG. 2 according to an embodiment 130-1.

Referring to FIG. 17 , the light emitting device 130 - 1 includes a second electrode part 405 , a protective layer 440 , a current blocking layer 445 , a light emitting structure 450 , and a passivation layer 465 . , and a first electrode part 470 .

The second electrode part 405 provides power to the light emitting structure 450 together with the first electrode part 470 . The second electrode unit 405 includes a support layer 410 , a bonding layer 415 , a barrier layer 420 , a reflective layer 425 , and an ohmic layer 430 . ) may be included.

The support layer 410 supports the light emitting structure 450 . The support layer 210 may be formed of a metal or a semiconductor material. In addition, the support layer 410 may be formed of a material having high electrical conductivity and thermal conductivity. For example, the support layer 410 is a metal including at least one of copper (Cu), a copper alloy (Cu alloy), gold (Au), nickel (Ni), molybdenum (Mo), and copper-tungsten (Cu-W). It may be a material or a semiconductor including at least one of Si, Ge, GaAs, ZnO, and SiC.

The bonding layer 415 may be disposed between the support layer 410 and the barrier layer 420 , and may serve as a bonding layer for bonding the support layer 410 and the barrier layer 420 . The bonding layer 415 may include a metal material, for example, at least one of In, Sn, Ag, Nb, Pd, Ni, Au, and Cu. Since the bonding layer 415 is formed to bond the supporting layer 410 by a bonding method, when the supporting layer 410 is formed by plating or deposition, the bonding layer 215 may be omitted.

The barrier layer 420 is disposed under the reflective layer 425 , the ohmic layer 430 , and the passivation layer 440 , and metal ions of the bonding layer 415 and the support layer 410 are disposed on the reflective layer 425 , and the protective layer 440 . It is possible to prevent diffusion to the light emitting structure 450 through the mix layer 430 . For example, the barrier layer 420 may include at least one of Ni, Pt, Ti, W, V, Fe, and Mo, and may be formed of a single layer or multiple layers.

The reflective layer 425 may be disposed on the barrier layer 420 and reflect light incident from the light emitting structure 450 to improve light extraction efficiency. The reflective layer 425 may be formed of a light reflective material, for example, a metal or alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf.

The reflective layer 425 may be formed as a multi-layer using a metal or alloy and a light-transmitting conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO, for example, IZO/Ni, AZO/Ag, IZO. It can be formed of /Ag/Ni, AZO/Ag/Ni, or the like.

The ohmic layer 430 may be disposed between the reflective layer 425 and the second semiconductor layer 452 , and is in ohmic contact with the second semiconductor layer 452 to smoothly supply power to the light emitting structure 450 . can make it happen

The ohmic layer 430 may be formed by selectively using the light-transmitting conductive layer and the metal. For example, the ohmic layer 430 includes a metal material in ohmic contact with the second semiconductor layer 452 , for example, at least one of Ag, Ni, Cr, Ti, Pd, Ir, Sn, Ru, Pt, Au, and Hf. can do.

The passivation layer 440 may be disposed on an edge region of the second electrode layer 405 . For example, the protective layer 440 is on the edge region of the ohmic layer 430 , or the edge region of the reflective layer 425 , or the edge region of the barrier layer 420 , or the edge region of the support layer 410 . can be placed.

The protective layer 440 may prevent the interface between the light emitting structure 450 and the second electrode layer 405 from being peeled off, thereby preventing the reliability of the light emitting device 130 - 1 from being deteriorated. The protective layer 440 is an electrically insulating material, for example, ZnO, SiO ₂ , Si ₃ N ₄ , TiOx (x is a positive real number), or Al ₂ O ₃ and the like.

The current blocking layer 445 may be disposed between the ohmic layer 430 and the light emitting structure 450 . An upper surface of the current blocking layer 445 may contact the second conductivity-type semiconductor layer 452 , and a lower surface or a lower surface and side surfaces of the current blocking layer 445 may contact the ohmic layer 430 . The current blocking layer 445 may be disposed such that at least a portion thereof overlaps the first electrode part 470 in the vertical direction. Here, the vertical direction may be a direction from the first conductivity type semiconductor layer 456 to the second conductivity type semiconductor layer 452 .

The current blocking layer 445 may be formed between the ohmic layer 430 and the second conductivity type semiconductor layer 452 , or between the reflective layer 425 and the ohmic layer 430 , but is not limited thereto.

The light emitting structure 450 may be disposed on the ohmic layer 430 and the protective layer 440 . The side surface of the light emitting structure 450 may become an inclined surface in an isolation etching process for dividing the unit chip. The light emitting structure 450 may include a first conductivity type semiconductor layer 456 , an active layer 454 , and a second conductivity type semiconductor layer 452 .

The first conductivity-type semiconductor layer 456 may be implemented with a compound semiconductor such as Group III-5, Group II-6, or the like, and may be doped with a first conductivity-type dopant. For example, the first conductivity type semiconductor layer 456 may be a semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). and may be doped with an n-type dopant (eg, Si, Ge, Sn, etc.).

The active layer 454 emits light by energy generated in a recombination process of electrons and holes provided from the first conductivity type semiconductor layer 456 and the second conductivity type semiconductor layer 452 . can create

The active layer 454 may be a semiconductor compound, for example, a group 3-5, group 2-6 compound semiconductor, and may have a single well structure, a multi-well structure, a quantum-wire structure, or a quantum dot structure. Dot) structure or the like. When the active layer 454 has a quantum well structure, a well layer having a compositional formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1); In _a Al _b Ga _1-ab N (0≤a≤1, 0≤b≤1, 0≤a+b≤1) may have a single or quantum well structure having a barrier layer having a composition formula. The well layer may be a material having a band gap lower than the energy band gap of the barrier layer.

The second conductivity-type semiconductor layer 452 may be implemented with a compound semiconductor such as Group III-5, Group II-6, or the like, and may be doped with a second conductivity-type dopant. For example, the second conductivity type semiconductor layer 452 is a semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). and p-type dopants (eg, Mg, Zn, Ca, Sr, Ba) may be doped.

The passivation layer 465 may be disposed on a side surface of the light emitting structure 450 to electrically protect the light emitting structure 450 . The passivation layer 465 may also be disposed on a portion of the upper surface of the first conductivity-type semiconductor layer 456 or the upper surface of the passivation layer 440 . The passivation layer 465 may be formed of an insulating material such as SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , or Al ₂ O ₃ to be formed can

The first electrode part 470 may be disposed on the first conductivity type semiconductor layer 456 and may have a predetermined pattern shape. A roughness pattern (not shown) may be formed on the upper surface of the first conductivity type semiconductor layer 456 to increase light extraction efficiency. Also, a roughness pattern (not shown) may be formed on the upper surface of the first electrode part 470 to increase light extraction efficiency.

The light emitting device 130 may be electrically connected to the first and second conductive layers 122 and 124 . The light emitting device 130 may be bonded to the first conductive layer 122 by die bonding. For example, the second electrode part 405 of the light emitting device 130 - 1 may be electrically connected to the first conductive layer 122 , and may be electrically connected to the second conductive layer 124 by a wire 135 . have. In this case, the number of wires 135 may be one or more.

The wavelength conversion member 140 is disposed on the upper surface of the light emitting device 130 , and may convert a wavelength of light emitted from the light emitting device 130 . The wavelength conversion member 140 may be a mixture of a phosphor and a light-transmitting resin. For example, the phosphor may include at least one of a red phosphor, a green phosphor, and a yellow phosphor.

For example, the wavelength conversion member 140 may be in the form of a phosphor film or a phosphor sheet, and may be attached or fixed to the light emitting device 130 by an adhesive member, but is not limited thereto.

In another embodiment, the wavelength conversion member 140 may have a molding layer or a coating layer structure in which a phosphor and a light-transmitting resin are mixed.

The wavelength conversion member 140 may have an opening (not shown) through which the wire passes or through which the wire is exposed. For example, the wire 135 may pass through the wavelength conversion member 140 or through an opening provided in the wavelength conversion member 140 .

The lower surface of the wavelength conversion member 140 may be in contact with the upper surface of the light emitting device 130 . One region of the lower surface of the wavelength conversion member 140 may contact the entire upper surface of the light emitting device 130 .

The area of the lower surface of the wavelength conversion member 140 may be larger than the area of the upper surface of the light emitting device 130 . For example, the area of the lower surface of the wavelength conversion member 140 may be larger than the area of the upper surface of the light emitting structure 450 of the light emitting device 130 - 1 , for example, the upper surface of the first conductivity-type semiconductor layer 456 .

FIG. 7 is a view for explaining a size between the light emitting device 130 and the wavelength conversion member 140 shown in FIG. 2 .

Referring to FIG. 7 , the total area (P1×P2) of the lower surface of the wavelength conversion member 140 may be greater than the total area (S1×S2) of the upper surface of the light emitting device 130 in contact with the wavelength conversion member 140 . have.

The wavelength conversion member 140 may include a first area Area1 overlapping the upper surface of the light emitting device 130 in the vertical direction and a second area Area2 not overlapping the upper surface of the light emitting device 130 in the vertical direction. can For example, the vertical direction may be a direction from the lower surface to the upper surface of the light emitting device 130 .

The first area Area1 of the wavelength conversion member 140 may be an area of a lower surface in contact with the upper surface of the light emitting device 130 , and the second area Area2 of the wavelength conversion member 140 is the light emitting device 130 . ) may be the remaining area of the lower surface spaced apart from the upper surface.

That is, the area of the lower surface of the wavelength conversion member 140 may be larger than the area of the upper surface of the light emitting device 130 by the area of the second area Area2 of the wavelength conversion member 140 .

Each of the sides of the lower surface of the wavelength conversion member 140 may be greater than the length of a corresponding one of the sides of the upper surface of the light emitting device 130 .

In addition, the wavelength conversion member 140 may have a shape that protrudes in a horizontal direction with respect to each side of the upper surface of the light emitting device 130 or each side of the light emitting device 130 . Here, the horizontal direction may be a direction horizontal to the upper surface of the light emitting device 130 .

For example, a distance between each side of the lower surface of the wavelength conversion member 140 and each side of the upper surface of the light emitting device 140 corresponding thereto may be constant.

For example, the lower surface of the wavelength conversion member 140 and the upper surface of the light emitting device 130 may be rectangular, and the first side 11 - 1 of the lower surface of the wavelength conversion member 140 and the corresponding upper surface of the light emitting device 130 . The first distance D1 between the first side 12-1 of The second distance D2 between 2) may be the same. The first side 11-1 and the second side 11-2 of the lower surface of the wavelength conversion member 140 may be adjacent to each other and may be perpendicular to each other.

The first distance D1 is a third distance D3 between the third side 11-3 of the lower surface of the wavelength conversion member 140 and the third side 12-3 of the upper surface of the light emitting device 130 corresponding thereto; may be the same. The first side 11-1 and the third side 11-3 of the lower surface of the wavelength conversion member 140 may be opposite to each other and spaced apart from each other.

The second distance D2 is the fourth distance D4 between the fourth side 11-4 of the lower surface of the wavelength conversion member 140 and the fourth side 12-4 of the upper surface of the light emitting device 130 corresponding thereto; may be the same. The fourth side 11-4 and the second side 11-2 of the lower surface of the wavelength conversion member 140 may be opposite to each other and spaced apart from each other.

By making the first to fourth distances D1 to D4 the same, the embodiment may improve color uniformity of light passing through the wavelength conversion member 140 .

In another embodiment, at least one of the first to fourth distances D1 to D4 may be different from the others.

The Zener diode 150 may be disposed on the second conductive layer 124 . The Zener diode 150 may serve to protect the light emitting device package 100 from static electricity. The Zener diode 150 may be electrically connected to the first and second conductive layers 122 and 124 .

The first molding member 160 is disposed on the substrate 110 and surrounds a portion of the first and second conductive layers 122 and 124 , the light emitting device 130 , the Zener diode 150 , and the wire 135 . . The first molding member 160 may expose the upper surface 140 - 1 (refer to FIG. 6A ) of the wavelength conversion member 140 .

A portion of the wire 135 may be exposed outside the first molding member 160 , and the second molding member 170 may wrap a portion of the exposed wire 135 . For example, as shown in FIG. 2 , the bent top or highest point of the wire 135 may be exposed outside the upper surface of the first molding member 160 , and the second molding member 170 may be exposed to the exposed wire 135 . ) can wrap or envelop the bent top or apex of the However, in another embodiment, the bent top or highest point of the wire 135 may not be exposed outside the upper surface of the first molding member, and the first molding member and the wavelength conversion member may surround and surround the entire wire 135 . .

The first molding member 160 may be formed of a non-conductive molding member capable of reflecting light. For example, the first molding member 160 may be made of, for example, white silicone, but is not limited thereto.

For example, the first molding member 160 may be made of methyl-based silicone, which is a material resistant to deterioration, but is not limited thereto.

The first molding member 160 may be disposed to be in close contact with the light emitting device 130 and the wavelength conversion member 140 .

For example, the first molding member 160 may be in contact with a side surface of the light emitting device 130 , a portion of a lower surface of the wavelength conversion member 140 , and a side surface.

The second molding member 170 is disposed on the first molding member 160 . The second molding member 170 may be disposed on the first molding member 160 to surround the bent upper end or highest point of the wire 135 exposed outside the upper surface of the first molding member 170 .

The second molding member 170 may be a light-transmitting non-conductive molding member, for example, phenyl-based silicone, but is not limited thereto. The thickness of the second molding member 170 may be thinner than the thickness of the first molding member 160 . For example, the thickness of the first molding member 160 may be 73 μm to 300 μm, the thickness of the second molding member 170 may be 70 μm to 297 μm, and the thickness of the second molding member 170 may be It may be thinner than the thickness of the first molding member 160 .

6A is an enlarged view of the first molding member 160 and the second molding member 170 according to an exemplary embodiment. In FIG. 6A, the wire 135 of FIG. 2 is omitted.

Referring to FIG. 6A , the second area Area2 of the lower surface 140 - 2 of the wavelength conversion member 140 may contact the first molding member 160 . The upper surface 160a of the first molding member 160 may be positioned on the same plane as the upper surface 140 - 1 of the wavelength conversion member 140 .

For example, the distance between the upper surface of the light emitting element 130 and the upper surface 160a of the first molding member 160 may be the same as the distance between the upper surface of the light emitting element 130 and the upper surface 140-1 of the wavelength conversion member 140 . can

Also, for example, the first interface 165 - 1 between the upper surface of the wavelength conversion member 140 and the lower surface of the second molding member 170 is the upper surface of the first molding member 160 and the lower surface of the second molding member 170 . It may be located on the same plane as the second boundary surface 165 - 2 between the liver. That is, the distance between the upper surface of the light emitting device 130 and the first interface 165 - 1 may be the same as the distance between the upper surface of the light emitting device 130 and the second interface 165 - 2 .

Since the first molding member 160 is in close contact with the light emitting devices 130 and the wavelength conversion member 140 , it is possible to directly reflect the light irradiated from the light emitting device 130 , and may be formed by air or the substrate 110 . It is possible to reduce light loss due to absorption and transmission, thereby improving the luminous flux and luminous efficiency of the embodiment.

FIG. 8A shows a beam pattern of the light emitting device package when the first and second molding members are light-transmitting, and FIG. 8B shows a beam pattern of the light emitting device package 100 according to the embodiment shown in FIG. 2 .

It can be seen that the luminous flux and luminous efficiency of the light emitting device package of FIG. 8B are improved compared to the light emitting device package of FIG. 8A . This is because light irradiated backward is present in the light emitting device package of FIG. 8A , whereas light is reflected by the first molding member 160 in the light emitting device package 100 of FIG. 8B . because it exists

In addition, since the area of the lower surface of the wavelength conversion member 140 is larger than the area of the upper surface of the light emitting device 130 , in the embodiment, the wavelength conversion member 140 and the first molding member 160 are separated from the light emitting device through the interface. It is possible to prevent the generated light from leaking out. This is because, since the area of the lower surface of the wavelength conversion member 140 is larger than the area of the upper surface of the light emitting device 130 , a path through which light may leak is lengthened.

In addition, since the area of the lower surface of the wavelength conversion member 140 is larger than the area of the upper surface of the light emitting device 130, it is possible to prevent the molding member from overflowing in the dispensing process for forming the first molding member 160, Due to this, the embodiment can ensure process stability.

For example, the total area (P1×P2) of the lower surface of the wavelength conversion member 140 may be 1.1 to twice the total area (S1×S2) of the upper surface of the light emitting device 130 .

When the total area (P1×P2) of the lower surface of the wavelength conversion member 140 is less than 1.1 times the total area (S1×S2) of the upper surface of the light emitting device 130 , the above-described light leakage effect cannot be prevented. In addition, when the total area (P1×P2) of the lower surface of the wavelength conversion member 140 is more than twice the total area (S1×S2) of the upper surface of the light emitting device 130 , the light loss increases and the luminous efficiency decreases can do.

6B is an enlarged view of a first molding member 160-1 and a second molding member 170-1 according to another exemplary embodiment. In FIG. 6B , the wire 135 of FIG. 2 is omitted.

Referring to FIG. 6B , the second area Area2 of the lower surface 140 - 2 of the wavelength conversion member 140 may contact the first molding member 160 - 1 . The upper surface 160a of the first molding member 160 - 1 may be located below the upper surface 140 - 1 of the wavelength conversion member 140 , and may be located above the lower surface 140 - 2 of the wavelength conversion member 140 . .

For example, the distance between the top surface of the light emitting device 130 and the top surface 160a of the first molding member 160 - 1 is greater than the distance between the top surface of the light emitting device 130 and the top surface 140 - 1 of the wavelength conversion member 140 . can be short

Also, for example, the second interface 165 - 3 between the upper surface of the first molding member 160 - 1 and the lower surface of the second molding member 170 - 1 is the upper surface 140 - 1 of the wavelength conversion member 140 and It may be located below the first interface 165 - 1 between the lower surfaces of the second molding member 170 - 1 , and the lower surface 140 - 2 and the first molding member 170 - 1 of the wavelength conversion member 140 . It may be located on the third boundary surface 165 - 4 of the liver.

Also, the distance between the upper surface of the light emitting device 130 and the second interface 165 - 3 may be shorter than the distance between the upper surface of the light emitting device 130 and the first interface 165 - 1 .

6C is an enlarged view of the first molding member 160 - 2 and the second molding member 170 - 2 according to another exemplary embodiment. In FIG. 6C, the wire 135 of FIG. 2 is omitted.

Referring to FIG. 6C , the second area Area2 of the lower surface 140 - 2 of the wavelength conversion member 140 may contact the first molding member 160 - 2 . The upper surface 160a of the first molding member 160 - 2 is located below the upper surface 140 - 1 of the wavelength conversion member 140 , and is on the same plane as the lower surface 140 - 2 of the wavelength conversion member 140 . can be located

For example, the second boundary surface 165 - 5 between the upper surface of the first molding member 160 - 2 and the lower surface of the second molding member 170 - 2 is the lower surface 140 - 2 of the wavelength conversion member 140 and the second boundary surface of the second molding member 170 - 2 . It may be located on the same plane as the third boundary surface 165 - 4 between the first molding members 160 - 2 .

9 shows the results of the luminous flux experiment for case 1 (case 1) to case 3 (case 3). Case 1 relates to an embodiment including the first molding member 160-2 shown in FIG. 6C, and case 2 relates to an embodiment including the first molding member 160-1 shown in FIG. 6B and case 3 may relate to an embodiment including the first molding member 160 shown in FIG. 6A .

Referring to FIG. 9 , the thickness of the first molding member is increased in the order of case 1 , case 2 , and case 3 . For example, the thickness of the first molding member 160 of case 1 may be 200 μm, and the thickness of the second molding member 170 of case 1 may be 170 μm. The thickness of the first molding member 160-1 of case 2 may be 250 μm, and the thickness of the second molding member 170 of case 2 may be 120 μm. Also, the thickness of the first molding member 160 - 2 of case 3 may be 300 μm, and the thickness of the second molding member 170 of case 3 may be 70 μm.

The luminous flux of case 1 may be 254 [lm], the luminous flux of case 2 may be 296 [lm], and the luminous flux of case 3 may be 314 [lm]. That is, as the thickness of the first molding member increases, the luminous flux may increase, and it can be seen that case 3 has the largest luminous flux.

As shown in FIG. 9 , it can be seen that the uniformity of the first molding member is good in the order of case 1, case 2, and case 3 . Therefore, it can be seen that case 3 has the best luminous flux of the light emitting device package and the uniformity of the first molding member.

3 is a cross-sectional view of a light emitting device package 200 according to another embodiment. The same reference numerals as in FIG. 2 denote the same components, and descriptions of the same components are simplified or omitted.

Referring to FIG. 3 , the embodiment 200 includes a substrate 110 , first to third conductive layers 122a , 122b and 124 , contact vias 125a , 125b and 127 , heat dissipation electrodes 126a , 126b and 128 , a light emitting device 130a , a wavelength conversion member 140 , a Zener diode 150 , a first molding member 160 , and a second molding member 170 .

The light emitting device 130a may be a flip chip light emitting diode. The wire 135 of FIG. 2 is omitted in FIG. 3 .

18 is a cross-sectional view of the light emitting device 130a shown in FIG. 3 according to an embodiment 130-2. Referring to FIG. 18 , the light emitting device 130 - 2 includes a light transmitting substrate 310 , a light emitting structure 320 , a conductive layer 330 , a first electrode 342 , a second electrode 344 , and a passivation layer ( 350).

The light-transmitting substrate 310 may be, for example, any one of a sapphire substrate, a silicon (Si) substrate, a zinc oxide (ZnO) substrate, and a nitride semiconductor substrate, or GaN, InGaN, AlGaN, AlInGaN, SiC, GaP, InP, Ga ₂ 0 ₃ , and at least one of GaAs may be a laminated template substrate.

The light emitting structure 320 is disposed on one surface of the substrate 310 .

The light emitting structure 320 includes a first conductivity type semiconductor layer 332 , a second conductivity type semiconductor layer 326 , and a first conductivity type semiconductor layer 332 and a second conductivity type semiconductor layer 326 disposed on a substrate. ) may include an active layer 324 disposed between.

The first conductivity type semiconductor layer 332 may be the same as the first conductivity type semiconductor layer 456 of FIG. 17 , and the second conductivity type semiconductor layer 326 is the second conductivity type semiconductor layer 452 of FIG. 17 . may be the same as, and the active layer 324 may be the same as the active layer 454 of FIG.

The conductive layer 330 may be disposed on the second conductivity-type semiconductor layer 326 .

For example, the conductive layer 330 may be disposed between the second conductivity type semiconductor layer 326 and the second electrode 344 , and may be in ohmic contact with the second conductivity type semiconductor layer 330 . Since the conductive layer 330 reduces total reflection and has good light transmittance, it is possible to increase the extraction efficiency of light emitted from the active layer 324 to the second conductivity-type semiconductor layer 326 .

The conductive layer 330 is a metal material in ohmic contact with the second conductivity type semiconductor layer 326, for example, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, Ti, It may include at least one of Ag, Cr, Mo, Nb, Al, Ni, Cu, WTi, V, or an alloy thereof.

In addition, the conductive layer 330 is a transparent oxide-based material having high transmittance with respect to the emission wavelength, for example, ITO (Indium Tin Oxide), TO (Tin Oxide), IZO (Indium Zinc Oxide), IZTO (Indium Zinc Tin Oxide), IAZO (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), AZO (Aluminium Zinc Oxide), ATO (Aluminium Tin Oxide), GZO (Gallium Zinc Oxide), IrOx, RuOx It may be implemented as a single layer or a multilayer using one or more of ITO, Ni, Ag, Ni/IrOx/Au, or Ni/IrOx/Au/ITO.

The light emitting structure 320 may have a groove exposing a region of the first conductivity-type semiconductor layer 322 in order to dispose the first electrode 342 .

The first electrode 342 may be disposed on the exposed first conductivity-type semiconductor layer 322 and may be in contact with the exposed first conductivity-type semiconductor layer 322 .

The second electrode 344 may be disposed on the upper surface of the conductive layer 330 and may be in contact with the conductive layer 330 .

The first and second electrodes 342, 344 may be formed of a conductive metal such as Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, It may include at least one of Nb, Al, Ni, Cu, WTi, V, or an alloy thereof.

The passivation layer 350 may be disposed on a side surface of the light emitting structure 320 . For example, the passivation layer 350 may cover the side surface of the light emitting structure 320 .

In addition, the passivation 350 may be disposed on another region of the first conductivity-type semiconductor layer 322 excluding the region where the first electrode 342 is disposed.

In addition, the passivation layer 350 may be disposed on another area of the upper surface of the conductive layer 330 except for the area where the second electrode 344 is disposed. The passivation layer 350 may expose at least a portion of the top surface of the first electrode 342 and at least a portion of the top surface of the second electrode 344 .

The first to third conductive layers 122a , 122b , and 124 may be disposed on the upper surface of the substrate 110 , and the heat dissipation electrodes 126a , 126b , and 128 are formed on the lower surface of the substrate 110 . may be disposed, and each of the contact vias 125a, 125b, and 127 penetrates through the substrate 110, and corresponds to any one of the first to third conductive layers 122a, 122b, and 124 and heat dissipation electrodes ( A corresponding one of 126a, 126b, and 128) may be electrically connected.

The light emitting device 130 - 2 may be electrically bonded to the first and second conductive layers 122a and 122b.

For example, as shown in FIG. 18 , between the first conductive layer 122a and the first electrode 342 of the light emitting device 130 - 2 , and between the second conductive layer 122b and the light emitting device 130 - 2 . A bonding unit 303 may be disposed between the second electrodes 344 of the , and the bonding unit 303 may bond both.

For example, the bonding portion 303 includes a first bonding portion 362 bonding between the first conductive layer 122a and the first electrode 342 of the light emitting device 130 - 2 , and a second conductive layer 122b . and a second bonding unit 364 bonding between the light emitting device 130 - 2 and the second electrode 344 of the light emitting device 130 - 2 .

For example, the first bonding unit 362 and the second bonding unit 364 may be solder paste or solder, and the light emitting device 130-2 may be formed of the first and second bonding units by flip chip bonding. It may be directly bonded to the second conductive layers 122a and 122b.

The positional relationship between the first molding member 160 and the second molding member 170 described in FIGS. 6A to 6C , the area of the lower surface of the wavelength converter 140 and the upper surface of the light emitting device 130 described in FIG. 7 . The description may be equally applied to the embodiment 200 shown in FIG. 3 .

4 is a cross-sectional view of a light emitting device package 300 according to another embodiment. The same reference numerals as those of FIGS. 1 and 2 denote the same components, and descriptions of the same components are simplified or omitted.

Referring to FIG. 4 , the first molding member 160a illustrated in FIG. 4 may be a molding member that absorbs light in order to increase contrast between turning on and off of the light emitting device package. For example, the first molding member 160a may be made of black silicone.

The positional relationship between the first molding member 160 and the second molding member 170 described in FIGS. 6A to 6C , the area of the lower surface of the wavelength converter 140 and the upper surface of the light emitting device 130 described in FIG. 7 . Description, the luminous flux of the light emitting device package according to the thickness of the first molding member described in FIG. 9 may be equally applied to the embodiment 300 shown in FIG. 4 .

5 is a cross-sectional view of a light emitting device package 400 according to another embodiment. The same reference numerals as those of FIGS. 1 and 2 denote the same components, and descriptions of the same components are simplified or omitted.

Referring to FIG. 5 , instead of the second molding member 170 shown in FIG. 2 , the second molding member 190 of the light emitting device package 400 has a convex shape that refracts light emitted from the wavelength conversion member 140 . It may have a curved lens shape.

For example, the second molding member 190 may have a dome shape, a hemispherical shape, or a semi-elliptical shape, but is not limited thereto.

The second molding member 190 may be disposed on the upper surface of the wavelength conversion member 140 and on one region of the upper surface of the first molding member 160 adjacent to the wavelength conversion member 140 .

The second molding member 190 may be disposed to correspond to or aligned with the wavelength conversion member 140 . For example, the center of the second molding member 190 may be aligned with the center of the wavelength conversion member 140 .

The positional relationship between the first molding member 160 and the second molding member 170 described in FIGS. 6A to 6C , the area of the lower surface of the wavelength converter 140 and the upper surface of the light emitting device 130 described in FIG. 7 . Description, the luminous flux of the light emitting device package according to the thickness of the first molding member described with reference to FIG. 9 may be equally applied to the embodiment 400 illustrated in FIG. 5 .

10 is a plan view of the light emitting device package 500 according to another embodiment, FIG. 11 is a cross-sectional view of the light emitting device package 500 shown in FIG. 10 in the CD direction, and FIG. 12 is the light emission shown in FIG. A cross-sectional view of the device package 500 in the EF direction is shown.

10 to 12 , the light emitting device package 500 includes a substrate 110a, a plurality of first conductive layers 210-1 to 210-4, second and third conductive layers 272 and 274, The plurality of light emitting elements 220-1 to 220-4, the plurality of wavelength conversion members 230-1 to 230-4, the first molding member 260, the second molding member 270, the plurality of third It includes first wires 280-1 to 280-4, and a plurality of second wires 290-1 to 290-4.

The substrate 110a may be the same as described with reference to FIG. 1 .

The plurality of first conductive layers 210 - 1 to 210 - 4 may be disposed on the upper surface of the substrate 110a to be electrically separated from each other. The second and third conductive layers 272 and 274 may be disposed to be spaced apart from each other on the upper surface of the substrate 110a, and may also be disposed to be spaced apart from the plurality of first conductive layers 210-1 to 210-4. can

The materials of the first conductive layers 210 - 1 to 210 - 4 and the second and third conductive layers 272 and 274 may be the same as those of the first and second conductive layers 122 and 124 described in FIG. 1 . However, the present invention is not limited thereto.

Each of the plurality of light emitting devices 220 - 1 to 220 - 4 is disposed on a corresponding upper surface of any one of the plurality of first conductive layers 210 - 1 to 210 - 4 . This is by separating each of the plurality of light emitting elements 220-1 to 220-4, which are heat sources, from each other, so that the light emitting elements 220-1 to 220-4 do not receive thermal interference from each other and the light emitting elements 220-1 to 220-1 to 220-4) to individually dissipate heat generated from each.

Each of the light-emitting elements 220-1 to 220-4 may have the same structure as each other, and the number of light-emitting elements in FIG. 10 is four, but is not limited thereto. In another embodiment, the number of light-emitting elements is one. may be more than

For example, each of the light emitting devices 220 - 1 to 220 - 4 may be a vertical light emitting diode of FIG. 17 .

Using a conductive adhesive member, eutectic bonding, or die bonding, each of the plurality of light emitting devices 220-1 to 220-4 includes the first conductive layers 210-1 to 210- 4) can be directly bonded to any one of the corresponding ones.

Each of the plurality of first wires 280-1 to 280-4 may electrically connect a corresponding one of the first conductive layers 210-1 to 210-4 and the second conductive layer 272 .

Each of the plurality of second wires 290-1 to 290-4 may electrically connect the third conductive layer 274 to a corresponding one of the plurality of light-emitting devices 220-1 to 220-4. .

In addition, each of the light emitting devices 220 - 1 to 220 - 4 may be the flip-chip type light emitting diode of FIG. 18 . When the light emitting devices 220 - 1 to 220 - 4 are flip-chip type light emitting diodes, the first conductive layers 210 - 1 to 210 - 4 may be electrically separated into two, and the light emitting devices 220 - 1 to 220-4) each may be directly bonded to two separated first conductive layers, and each of the first wires may be directly bonded to any one of the two separated first conductive layers and the second conductive layer 272 may be electrically connected, and each of the second wires may electrically connect the other one of the two separated first conductive layers to the third conductive layer 274 .

Each of the plurality of wavelength conversion members 230 - 1 to 230 - 4 may be disposed on the upper surface of a corresponding one of the light emitting elements 220 - 1 to 220 - 4 .

A lower surface of each of the plurality of wavelength conversion members 230 - 1 to 230 - 4 may contact an upper surface of a corresponding one of the light emitting elements 220 - 1 to 220 - 4 .

An area of a lower surface of each of the plurality of wavelength conversion members 230 - 1 to 230 - 4 may be greater than an area of an upper surface of a corresponding one of the light emitting elements 220 - 1 to 220 - 4 .

Each of the plurality of wavelength conversion members 230 - 1 to 230 - 4 includes a first region overlapping a top surface of a corresponding one of the light emitting devices 220 - 1 to 220 - 4 in a vertical direction, and in a vertical direction. The second region may include a second region that does not overlap the upper surface of any one of the light emitting devices 220 - 1 to 220 - 4 . For example, the vertical direction may be a direction from the lower surface to the upper surface of the light emitting devices 220 - 1 to 220 - 4 .

The first region of each of the wavelength conversion members 230 - 1 to 230 - 4 may be a region of a lower surface in contact with an upper surface of a corresponding one of the light emitting elements 220 - 1 to 220 - 4 , The second region of each of the conversion members 220-1 to 220-4 may be the remaining region of a lower surface spaced apart from an upper surface of a corresponding one of the light emitting elements 220-1 to 220-4.

That is, the area of the lower surface of each of the wavelength conversion members 230 - 1 to 230 - 4 is equal to the area of the second region of the wavelength conversion members 23 - 1 to 230 - 4 of the light emitting elements 220 - 1 to 220 - 4) may be larger than the area of the upper surface of any one of the corresponding ones.

Each of the sides of the lower surface of each of the wavelength conversion members 230 - 1 to 230 - 4 may be greater than the length of the corresponding side of the corresponding upper surface of any one of the light emitting elements 220 - 1 to 220 - 4 .

In addition, each of the wavelength conversion members 230-1 to 230-4 is each side of the upper surface of any one of the light-emitting devices 220-1 to 220-4 or the light-emitting devices 220-1 to 220-4. ) may be in the form of protruding in the horizontal direction based on the side of the upper surface of any one of the corresponding ones. Here, the horizontal direction may be a direction parallel to the upper surfaces of the light emitting elements 220 - 1 to 220 - 4 .

For example, the distance between each side of the lower surface of each of the wavelength conversion members 230 - 1 to 230 - 4 and the side of the upper surface of the corresponding light emitting devices 220 - 1 to 220 - 4 may be constant.

The description of the area of the light emitting device 130 and the area of the wavelength conversion member 140 described with reference to FIG. 7 includes the light emitting devices 220 - 1 to 220 - 4 and the wavelength conversion member 230 - corresponding to each other illustrated in FIG. 10 . 1 to 230-4) may be equally applied.

The first molding member 260 is disposed on the substrate 110a, and includes a plurality of first conductive layers 210 - 1 to 210 - 4 , second and third conductive layers 272 and 274 , and a plurality of light emitting devices. Wrapping around and surrounding the (220-1 to 220-4), and the wires (280-1 to 280-4).

The first molding member 260 may be made of the same material as the first molding member 160 of FIG. 1 .

The first molding member 260 may be in contact with a side surface of each of the plurality of light emitting devices 220-1 to 220-4 and a portion and a side surface of a lower surface of each of the plurality of wavelength conversion members 230-1 to 230-4. have.

The bent top or highest point of each of the plurality of second wires 290 - 1 to 290 - 4 may be exposed outside the upper surface of the first molding member 260 . However, in another embodiment, the bent top or highest point of each of the second wires may not be exposed outside the upper surface of the first molding member, and the first molding member and the wavelength conversion member may surround and surround the entire second wires. have.

The second molding member 270 is disposed on the first molding member 260 . The second molding member 270 surrounds the bent top or highest point of each of the second wires 290-1 to 290-4 exposed outside the upper surface of the first molding member 270. ) can be placed on The second molding member 270 may be made of the same material as the first molding member 170 of FIG. 1 .

The positional relationship between the first molding member 160 , the wavelength converting member 140 , and the second molding member 170 described in FIGS. 6A to 6C is the wavelength converting members 230 - 1 to 230 - shown in FIG. 10 . 4), the first molding member 260 , and the second molding member 270 may be equally applied.

Also, the luminous flux of the light emitting device package 100 according to the thickness of the first molding member 160 described in FIG. 9 may be equally applied to the embodiment 500 shown in FIG. 10 .

13 illustrates a wavelength conversion member 210a according to another exemplary embodiment.

Referring to FIG. 13 , the wavelength conversion members 220-1 to 220-4 of FIG. 10 are disposed to be spaced apart from each other, whereas the wavelength conversion member 230a illustrated in FIG. 13 may be integrally formed. have.

The wavelength converting member 230a is a connecting wavelength converting member disposed between the wavelength converting members 230-1 to 230-4 shown in FIG. 10 and two adjacent wavelength converting members 230-1 to 230-4. It may include members 230a1 to 230a3.

Since the embodiment of FIG. 13 includes the connection wavelength conversion members 230a1 to 230a3, light leakage prevention can be improved.

14 is a plan view of the light emitting device package 600 according to another embodiment, FIG. 15 is a cross-sectional view of the light emitting device package 600 shown in FIG. 14 in the CD direction, and FIG. 16 is shown in FIG. A cross-sectional view of the light emitting device package 600 in the EF direction is shown. The same reference numerals as those of FIGS. 10 to 12 denote the same components, and descriptions of the same components are simplified or omitted.

14 to 16 , in the embodiment 600 illustrated in FIG. 14 , lens-shaped second molding members 370-1 to 370-4 instead of the second molding member 270 illustrated in FIG. 10 . ) may be included.

Each of the second molding members 370-1 to 370-4 has an upper surface of a corresponding one of the wavelength conversion members 230-1 to 230-4, and a corresponding one of the wavelength conversion members 370- 1 to 370 - 4 may be disposed on an area of an upper surface of the first molding member 260 adjacent to each other.

A lower surface of each of the second molding members 370-1 to 370-4 has a corresponding upper surface of one of the wavelength conversion members 230-1 to 230-4, and a corresponding one of the wavelength conversion members (230-1 to 230-4). 370-1 to 370-4 may be in contact with one region of the upper surface of the first molding member 260 adjacent to the first molding member 260. Referring to FIG.

Each of the second molding members 370-1 to 370-4 may have a convex curved lens shape that refracts light. For example, each of the second molding members 370-1 to 370-4 may have a dome shape, a hemispherical shape, or a semi-elliptical shape, but is not limited thereto.

Each of the second molding members 370-1 to 370-4 may be aligned with a corresponding one of the wavelength conversion members 230-1 to 230-4. For example, a center of each of the second molding members 370-1 to 370-4 may be aligned with a center of a corresponding one of the wavelength conversion members 230-1 to 230-4.

Although FIG. 14 illustrates the second molding members 370-1 to 370-4 corresponding to the wavelength conversion members 230-1 to 230-4, respectively, in another embodiment, the second molding member includes the wavelength conversion members. It may be implemented as a single lens shape covering the entirety.

Each of the second molding members 370-1 to 370-4 is a bent shape of a corresponding one of the second wires 290-1 to 290-4 exposed outside the upper surface of the first molding member 270. It can wrap around the top or peak and surround it.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and optical members such as a light guide plate, a prism sheet, a diffusion sheet, etc. may be disposed on a light path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member may function as a backlight unit.

Also, the embodiment may be implemented as a display device, an indicator device, and a lighting device including the light emitting device package according to the embodiment.

Here, the display device includes a bottom cover, a reflecting plate disposed on the bottom cover, a light emitting module emitting light, a light guide plate disposed in front of the reflecting plate and guiding light emitted from the light emitting module to the front, and in front of the light guide plate An optical sheet including prism sheets disposed thereon, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel, and a color filter disposed in front of the display panel may include Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.

In addition, the lighting device includes a light source module including a substrate and a light emitting device package according to an embodiment, a heat sink for dissipating heat of the light source module, and a power supply unit that processes or converts an electrical signal received from the outside and provides it to the light source module may include For example, the lighting device may include a lamp, a head lamp, or a street lamp.

The head lamp includes a light emitting module including light emitting device packages disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a predetermined direction, for example, forward, and a lens that refracts light reflected by the reflector forward. , and a shade that blocks or reflects a portion of light reflected by the reflector and directed to the lens to form a light distribution pattern desired by the designer.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by a person skilled in the art to which the embodiments belong. Accordingly, the contents related to such combinations and modifications should be interpreted as being included in the scope of the present invention.

110: substrates 122 and 124: first and second conductive layers
125, 127: contact vias 126, 128: heat dissipation electrodes
130: light emitting element 135: wire
140: wavelength conversion member 150: zener diode
160: first molding member 170: second molding member.

Claims (15)

Board;
a light emitting device disposed on the substrate;
a wavelength conversion member disposed on an upper surface of the light emitting device and including a first region overlapping the upper surface of the light emitting device in a vertical direction, and a second region not overlapping with the upper surface of the light emitting device in the vertical direction;
a first molding member surrounding the light emitting device and in contact with a side surface of the light emitting device, a portion and a side surface of a lower surface of the wavelength conversion member, and a portion of an upper surface of the substrate; and
a second molding member disposed on the first molding member;
The first molding member exposes an upper surface of the wavelength conversion member,
The first region is a region of the lower surface of the wavelength conversion member in contact with the upper surface of the light emitting device, and the second region is the remaining region of the lower surface of the wavelength conversion member spaced apart from the upper surface of the light emitting device,
The total area of the lower surface of the wavelength conversion member is 1.1 to 2 times the total area of the upper surface of the light emitting device,
The distance between each side of the lower surface of the wavelength conversion member and each side of the upper surface of the light emitting device is the same, and the upper side of the light emitting device is disposed to correspond to the side of the lower surface of the wavelength conversion member. According to claim 1,
The first molding member is a non-conductive molding member that reflects light, and the second molding member is a light-transmitting, non-conductive molding member. According to claim 1,
The first molding member is a non-conductive molding member that absorbs light, and the second molding member is a light-transmitting, non-conductive molding member. delete delete According to claim 1,
The wavelength conversion member is a light emitting device package that protrudes in a horizontal direction with respect to each side of the upper surface of the light emitting device. delete delete delete According to claim 1,
a first conductive layer and a second conductive layer disposed on the substrate to be spaced apart from each other; and
Further comprising a wire electrically connecting the light emitting element and the second conductive layer,
The light emitting device is disposed on the first conductive layer,
A portion of the wire is exposed outside the first molding member, and the second molding member surrounds a portion of the exposed wire. delete delete delete delete delete

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