KR102404643B1 - 인-메모리 캐쉬 관리자를 구비한 hbm - Google Patents
인-메모리 캐쉬 관리자를 구비한 hbm Download PDFInfo
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- KR102404643B1 KR102404643B1 KR1020170013952A KR20170013952A KR102404643B1 KR 102404643 B1 KR102404643 B1 KR 102404643B1 KR 1020170013952 A KR1020170013952 A KR 1020170013952A KR 20170013952 A KR20170013952 A KR 20170013952A KR 102404643 B1 KR102404643 B1 KR 102404643B1
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/38—Information transfer, e.g. on bus
- G06F13/40—Bus structure
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/10—Address translation
- G06F12/1027—Address translation using associative or pseudo-associative address translation means, e.g. translation look-aside buffer [TLB]
- G06F12/1045—Address translation using associative or pseudo-associative address translation means, e.g. translation look-aside buffer [TLB] associated with a data cache
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
- G06F12/0893—Caches characterised by their organisation or structure
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
- G06F12/0862—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with prefetch
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/0292—User address space allocation, e.g. contiguous or non contiguous base addressing using tables or multilevel address translation means
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1016—Performance improvement
- G06F2212/1024—Latency reduction
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/60—Details of cache memory
- G06F2212/6028—Prefetching based on hints or prefetch instructions
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/10—Aspects relating to interfaces of memory device to external buses
- G11C2207/107—Serial-parallel conversion of data or prefetch
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5643—Multilevel memory comprising cache storage devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Memory System Of A Hierarchy Structure (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662367062P | 2016-07-26 | 2016-07-26 | |
| US62/367,062 | 2016-07-26 | ||
| US15/272,339 | 2016-09-21 | ||
| US15/272,339 US10180906B2 (en) | 2016-07-26 | 2016-09-21 | HBM with in-memory cache manager |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180012180A KR20180012180A (ko) | 2018-02-05 |
| KR102404643B1 true KR102404643B1 (ko) | 2022-06-02 |
Family
ID=61010011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020170013952A Active KR102404643B1 (ko) | 2016-07-26 | 2017-01-31 | 인-메모리 캐쉬 관리자를 구비한 hbm |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10180906B2 (enExample) |
| JP (1) | JP2018018513A (enExample) |
| KR (1) | KR102404643B1 (enExample) |
| CN (1) | CN107656878B (enExample) |
| TW (1) | TWI703440B (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10936221B2 (en) | 2017-10-24 | 2021-03-02 | Micron Technology, Inc. | Reconfigurable memory architectures |
| US10628354B2 (en) * | 2017-12-11 | 2020-04-21 | Micron Technology, Inc. | Translation system for finer grain memory architectures |
| KR102505913B1 (ko) * | 2018-04-04 | 2023-03-07 | 삼성전자주식회사 | 메모리 모듈 및 메모리 모듈을 포함하는 메모리 시스템 |
| CN111971660B (zh) * | 2018-06-05 | 2025-03-11 | 拉姆伯斯公司 | 高速缓存动态随机存取存储器 |
| KR102605205B1 (ko) * | 2018-07-25 | 2023-11-24 | 에스케이하이닉스 주식회사 | 메모리 장치 및 프로세싱 시스템 |
| US11138135B2 (en) * | 2018-09-20 | 2021-10-05 | Samsung Electronics Co., Ltd. | Scale-out high bandwidth memory system |
| CN110928810B (zh) * | 2018-09-20 | 2023-11-14 | 三星电子株式会社 | 向外扩展高带宽存储系统 |
| KR102693213B1 (ko) * | 2018-11-30 | 2024-08-09 | 에스케이하이닉스 주식회사 | 메모리 시스템 |
| CN111679785B (zh) | 2019-03-11 | 2025-03-11 | 三星电子株式会社 | 用于处理操作的存储器装置及其操作方法、数据处理系统 |
| KR102879034B1 (ko) * | 2019-03-11 | 2025-10-29 | 삼성전자주식회사 | 연산 처리를 수행하는 메모리 장치 및 메모리 장치의 동작방법 |
| DE102020105628A1 (de) | 2019-03-11 | 2020-09-17 | Samsung Electronics Co., Ltd. | Verfahren zur Durchführung interner Verarbeitungsvorgänge mit vordefinierter Protokollschnittstelle einer Speichervorrichtung |
| DE102020106357A1 (de) | 2019-03-11 | 2020-09-17 | Samsung Electronics Co., Ltd. | Speichereinrichtung und verfahren mit anweisungsringspeicherwarteschlange |
| US11436165B2 (en) * | 2019-05-01 | 2022-09-06 | Samsung Electronics Co., Ltd. | High bandwidth memory system |
| US10915451B2 (en) * | 2019-05-10 | 2021-02-09 | Samsung Electronics Co., Ltd. | Bandwidth boosted stacked memory |
| US11216385B2 (en) * | 2019-05-15 | 2022-01-04 | Samsung Electronics Co., Ltd. | Application processor, system-on chip and method of operating memory management unit |
| EP4553663A3 (en) * | 2019-12-26 | 2025-07-30 | Micron Technology, Inc. | Truth table extension for stacked memory systems |
| US11226816B2 (en) * | 2020-02-12 | 2022-01-18 | Samsung Electronics Co., Ltd. | Systems and methods for data placement for in-memory-compute |
| WO2022056757A1 (en) * | 2020-09-17 | 2022-03-24 | Alibaba Group Holding Limited | Three-dimensional stacked processing systems |
| KR20220127601A (ko) * | 2021-03-11 | 2022-09-20 | 삼성전자주식회사 | 인터페이스를 이용하여 내부 프로세싱을 수행하는 메모리 시스템, 메모리 장치 및 메모리 장치의 동작 방법 |
| US11901035B2 (en) * | 2021-07-09 | 2024-02-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of differentiated thermal throttling of memory and system therefor |
| JP2023178769A (ja) | 2022-06-06 | 2023-12-18 | 富士通株式会社 | 演算処理装置および演算処理方法 |
| US12455824B2 (en) | 2022-09-10 | 2025-10-28 | Rambus Inc. | DRAM cache with stacked, heterogenous tag and data dies |
| KR20240119562A (ko) * | 2023-01-30 | 2024-08-06 | 삼성전자주식회사 | 캐시 바이패싱 동작을 수행하는 메모리 시스템 및 그것의 캐시 관리 방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013016244A (ja) | 2011-06-09 | 2013-01-24 | Semiconductor Energy Lab Co Ltd | 半導体記憶装置および半導体記憶装置の駆動方法 |
| JP2015503160A (ja) | 2011-11-30 | 2015-01-29 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッドAdvanced Micro Devices Incorporated | 物理的な行に共に記憶されたタグ及びデータを有するdramキャッシュ |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1278125A2 (en) * | 1994-10-14 | 2003-01-22 | MIPS Technologies, Inc. | Indexing and multiplexing of interleaved cache memory arrays |
| GB2297398B (en) * | 1995-01-17 | 1999-11-24 | Advanced Risc Mach Ltd | Accessing cache memories |
| JPH11212868A (ja) * | 1998-01-28 | 1999-08-06 | Oki Electric Ind Co Ltd | スヌープキャッシュメモリ制御システム |
| US8341352B2 (en) * | 2007-04-17 | 2012-12-25 | International Business Machines Corporation | Checkpointed tag prefetcher |
| KR101728067B1 (ko) * | 2010-09-03 | 2017-04-18 | 삼성전자 주식회사 | 반도체 메모리 장치 |
| KR20120079682A (ko) * | 2011-01-05 | 2012-07-13 | 삼성전자주식회사 | 디램 캐시를 포함하는 메모리 장치 및 이를 포함하는 시스템 |
| US20120221785A1 (en) * | 2011-02-28 | 2012-08-30 | Jaewoong Chung | Polymorphic Stacked DRAM Memory Architecture |
| US20120297256A1 (en) | 2011-05-20 | 2012-11-22 | Qualcomm Incorporated | Large Ram Cache |
| US9189399B2 (en) * | 2012-11-21 | 2015-11-17 | Advanced Micro Devices, Inc. | Stack cache management and coherence techniques |
| US9053039B2 (en) | 2012-12-21 | 2015-06-09 | Advanced Micro Devices, Inc. | Installation cache |
| US9170948B2 (en) * | 2012-12-23 | 2015-10-27 | Advanced Micro Devices, Inc. | Cache coherency using die-stacked memory device with logic die |
| US9477605B2 (en) | 2013-07-11 | 2016-10-25 | Advanced Micro Devices, Inc. | Memory hierarchy using row-based compression |
| US9286948B2 (en) * | 2013-07-15 | 2016-03-15 | Advanced Micro Devices, Inc. | Query operations for stacked-die memory device |
| CN104575584B (zh) | 2013-10-23 | 2018-11-30 | 钰创科技股份有限公司 | 具有嵌入式内存的系统级封装内存模块 |
| KR20150062646A (ko) * | 2013-11-29 | 2015-06-08 | 삼성전자주식회사 | 전자 시스템 및 이의 동작 방법 |
| US10078597B2 (en) * | 2015-04-03 | 2018-09-18 | Via Alliance Semiconductor Co., Ltd. | System and method of distinguishing system management mode entries in a translation address cache of a processor |
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2016
- 2016-09-21 US US15/272,339 patent/US10180906B2/en active Active
-
2017
- 2017-01-31 KR KR1020170013952A patent/KR102404643B1/ko active Active
- 2017-06-05 TW TW106118496A patent/TWI703440B/zh active
- 2017-06-05 JP JP2017110782A patent/JP2018018513A/ja active Pending
- 2017-06-29 CN CN201710515631.0A patent/CN107656878B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013016244A (ja) | 2011-06-09 | 2013-01-24 | Semiconductor Energy Lab Co Ltd | 半導体記憶装置および半導体記憶装置の駆動方法 |
| JP2015503160A (ja) | 2011-11-30 | 2015-01-29 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッドAdvanced Micro Devices Incorporated | 物理的な行に共に記憶されたタグ及びデータを有するdramキャッシュ |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI703440B (zh) | 2020-09-01 |
| CN107656878A (zh) | 2018-02-02 |
| US10180906B2 (en) | 2019-01-15 |
| TW201804328A (zh) | 2018-02-01 |
| CN107656878B (zh) | 2023-06-13 |
| US20180032437A1 (en) | 2018-02-01 |
| KR20180012180A (ko) | 2018-02-05 |
| JP2018018513A (ja) | 2018-02-01 |
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