KR102351181B1 - Multi-layered ceramic electronic component and method for manufacturing the same - Google Patents

Abstract

A method of manufacturing a multilayer ceramic electronic component according to an embodiment of the present invention includes: preparing a ceramic green sheet; forming an internal electrode pattern by applying an internal electrode paste including a conductive powder having a coating layer containing Sn on its surface or a conductive powder containing Sn in an alloy form on the ceramic green sheet; forming a ceramic laminate by laminating the ceramic green sheets on which the internal electrode patterns are formed; and forming a body including a dielectric layer and an internal electrode by sintering the ceramic laminate, wherein the Sn content compared to the conductive powder is 1.5 wt% or more.

Description

Multilayer ceramic electronic component and manufacturing method thereof

The present invention relates to a multilayer ceramic electronic component and a method for manufacturing the same.

In general, an electronic component using a ceramic material, such as a capacitor, an inductor, a piezoelectric element, a varistor or thermistor, includes a body made of a ceramic material, an internal electrode formed inside the body, and an external electrode installed on the body surface to be connected to the internal electrode. .

Among multilayer ceramic electronic components, a multilayer ceramic capacitor includes a plurality of stacked dielectric layers, internal electrodes disposed to face each other with one dielectric layer interposed therebetween, and external electrodes electrically connected to the internal electrodes.

Multilayer ceramic capacitors are widely used as components of mobile communication devices such as computers, PDAs, and mobile phones because of their small size, high capacity, and easy mounting.

Recently, in accordance with the high performance and light, thin and compact in the electrical and electronic device industries, small size, high performance, and ultra high capacity are required for electronic components as well.

In particular, there is a need for a technique for maximizing the capacitance per unit volume in accordance with the high-capacity and miniaturization of multilayer ceramic capacitors.

Therefore, in the case of the internal electrode, it is necessary to realize a high capacity by increasing the number of layers by minimizing the volume while maximizing the area.

However, as the internal electrode becomes thinner, the ratio of the thickness to the area is lowered, thereby increasing the sintering driving force, which intensifies the increase in electrode breakage and agglomeration.

Therefore, in order to realize a high-capacity multilayer ceramic capacitor, there is a need for a method capable of implementing a highly reliable small and high-capacity multilayer ceramic capacitor by suppressing electrode breakage and electrode aggregation, which are problems when forming a thin-layered internal electrode.

One of the objects of the present invention is to provide a method of manufacturing a multilayer ceramic electronic component capable of realizing a small and high-capacity multilayer ceramic capacitor with high reliability by suppressing electrode breakage and electrode aggregation.

According to an embodiment of the present invention, the method comprising: preparing a ceramic green sheet; forming an internal electrode pattern by applying an internal electrode paste including a conductive powder having a coating layer containing Sn on its surface or a conductive powder containing Sn in an alloy form on the ceramic green sheet; forming a ceramic laminate by laminating the ceramic green sheets on which the internal electrode patterns are formed; and forming a body including a dielectric layer and an internal electrode by firing the ceramic laminate, wherein the Sn content compared to the conductive powder is 1.5 wt% or more.

In addition, there is provided a multilayer ceramic electronic component manufactured by the method for manufacturing a multilayer ceramic electronic component according to an embodiment of the present invention, comprising: a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body, wherein the internal electrode includes Ni crystal grains and a composite layer surrounding the Ni crystal grains and including Ni and Sn.

According to the present invention, by using a conductive powder on which a coating layer containing Sn is formed on the surface or an internal electrode paste containing a conductive powder containing Sn in the form of an alloy, the internal electrode aggregation phenomenon and the internal electrode breakage phenomenon can be suppressed. there is

1 is a graph comparing the thermal shrinkage behavior according to the change in the Sn content included in the coating layer compared to the conductive powder.
2 is a diagram schematically illustrating a ceramic green sheet on which an internal electrode pattern is formed.
3 is a perspective view schematically illustrating a multilayer ceramic electronic component manufactured by the method of manufacturing a multilayer ceramic electronic component according to an exemplary embodiment of the present invention.
FIG. 4 is a view showing a cross-section taken along line II′ of FIG. 3 .
FIG. 5 is an enlarged view of part A of FIG. 4 .

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiment of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided in order to more completely explain the present invention to those skilled in the art. Accordingly, the shapes and sizes of elements in the drawings may be exaggerated for clearer description, and elements indicated by the same reference numerals in the drawings are the same elements.

And in order to clearly explain the present invention in the drawings, parts irrelevant to the description are omitted, and the thickness is enlarged to clearly express various layers and regions, and components having the same function within the scope of the same idea are referred to as the same. It is explained using symbols. Furthermore, throughout the specification, when a part "includes" a certain element, it means that other elements may be further included, rather than excluding other elements, unless otherwise stated.

In the drawings, an X direction may be defined as a first direction, an L direction or a length direction, a Y direction may be defined as a second direction, a W direction or a width direction, and a Z direction may be defined as a third direction, a T direction, or a thickness direction.

1 is a graph comparing the thermal shrinkage behavior according to the change in the Sn content included in the coating layer compared to the conductive powder.

2 is a view schematically illustrating a ceramic green sheet on which an internal electrode pattern is formed.

3 is a perspective view schematically illustrating a multilayer ceramic electronic component manufactured by the method for manufacturing a multilayer ceramic electronic component according to an exemplary embodiment of the present invention.

FIG. 4 is a view showing a cross-section taken along line I-I` of FIG. 3 .

FIG. 5 is an enlarged view of part A of FIG. 4 .

Hereinafter, a method of manufacturing a multilayer ceramic electronic component according to an aspect of the present invention and a multilayer ceramic electronic component manufactured according to the method will be described in detail with reference to FIGS. 1 to 5 .

Manufacturing method of multilayer ceramic electronic components

According to an aspect of the present invention, a method of manufacturing a multilayer ceramic electronic component includes: preparing a ceramic green sheet; forming an internal electrode pattern by applying an internal electrode paste including a conductive powder having a coating layer containing Sn on its surface or a conductive powder containing Sn in an alloy form on the ceramic green sheet; forming a ceramic laminate by laminating the ceramic green sheets on which the internal electrode patterns are formed; and forming a body including a dielectric layer and an internal electrode by sintering the ceramic laminate, wherein the Sn content compared to the conductive powder is 1.5 wt% or more.

Steps to prepare a ceramic green sheet

A ceramic green sheet including ceramic powder is prepared.

The ceramic green sheet may be prepared by mixing ceramic powder, a binder, a solvent, etc. to prepare a slurry, and the slurry may be prepared in a sheet type having a thickness of several μm by a doctor blade method. The ceramic green sheet may then be sintered to form a dielectric layer 111 as shown in FIG. 4 .

The thickness of the ceramic green sheet may be 0.6 μm or less, and for this reason, the thickness of the dielectric layer after firing may be 0.4 μm or less.

According to an embodiment of the present invention, even when the dielectric layer and the internal electrode are very thin, since the increase in electrode breakage and aggregation can be effectively suppressed, a dielectric layer having a thickness of 0.4 μm or less can be formed.

forming an inner electrode pattern

An internal electrode pattern is formed by applying a conductive powder having a coating layer containing Sn on the surface thereof or an internal electrode paste containing a conductive powder containing Sn in an alloy form on the ceramic green sheet. The Sn content compared to the conductive powder is 1.5 wt% or more.

The internal electrode pattern may be formed by a screen printing method or a gravure printing method.

Due to the difference in sintering temperature between the internal electrode paste and the ceramic green sheet, various problems such as electrode breakage and electrode aggregation may occur. In particular, as the thickness of the internal electrode becomes thinner, the probability of occurrence of this problem gradually increases.

In order to solve problems such as electrode breakage and electrode aggregation, a method of delaying the sintering of the conductive powder by dispersing the common material has been developed, but local problems may occur depending on the dispersion state of the common material, and sufficient effects may be obtained For this, a large amount of common goods and organic matter must be included.

In addition, some of the organic materials used to implement the sheet strength remain as malignant xanthan (crystallized carbon) during calcination, which may cause problems such as electrode aggregation and non-uniform sintering of the dielectric layer. This problem could be partially solved by process optimization, but as the internal electrodes and dielectric layers became thinner, it became difficult to solve only by process optimization.

The conductive powder on which a coating layer containing Sn is formed on the surface according to an embodiment of the present invention can delay sintering by blocking contact between the conductive powders regardless of dispersibility, and the conductive powder containing Sn in the form of an alloy is also independent of the fineness sintering may be delayed.

In addition, when a conductive powder that does not contain Sn is used, malignant xanthan (crystallized carbon), which is observed like a skein of thread, is generated on the electrode surface, which may cause problems such as electrode aggregation and non-uniform sintering of the dielectric layer. The conductive powder having a coating layer containing Sn on the surface according to the embodiment or the conductive powder containing Sn in the form of an alloy can suppress the generation of malignant xanthan (crystallized carbon) due to the dehydrogenation catalyst of the conductive powder during calcination. have.

In addition, Sn does not dissolve well in the conductive powder, but has good wettability with the conductive powder and has a low melting point. can be suppressed.

Therefore, according to an embodiment of the present invention, it is possible to suppress the increase in electrode breakage and aggregation, and in particular, even when the dielectric layer and the internal electrode are very thin, it is possible to effectively suppress the increase in the electrode breakage and aggregation.

In addition, as shown in FIG. 5 , Sn is concentrated on the surface of the crystal grains 121a of the internal electrode during the firing process to form a composite layer 121b including Ni and Sn, thereby suppressing the growth of crystal grains.

1 is a conductive powder containing no Sn (Comparative Example 1), a conductive powder having a Sn content of 0.2 wt% compared to the conductive powder (Comparative Example 2), and a conductive powder having a Sn content of 1.5 wt% compared to the conductive powder in the coating layer It is a graph comparing the thermal shrinkage behavior of (Invention Example 1).

Referring to FIG. 1 , it can be seen that the shrinkage initiation temperature increases as the Sn content of the coating layer increases compared to the conductive powder. However, in Comparative Example 2, the effect was insufficient because the Sn content was less than 1.5 wt% and the shrinkage initiation temperature was not significantly different from that of Comparative Example 1 which did not contain Sn. On the other hand, in the case of Inventive Example 1 in which the Sn content of the coating layer was 1.5 wt% compared to the conductive powder, it can be seen that the shrinkage initiation temperature of Comparative Example 1 was significantly increased.

Therefore, it is preferable that the Sn content is 1.5 wt% or more compared to the conductive powder. Meanwhile, the upper limit of the Sn content relative to the conductive powder does not need to be particularly limited, but may be 4.0 wt% or less.

The thickness of the internal electrode pattern may be 0.5 μm or less, and thus the thickness of the internal electrode after firing may be 0.4 μm or less. According to an embodiment of the present invention, even when the dielectric layer and the internal electrode are very thin, since the increase in electrode breakage and aggregation can be effectively suppressed, the internal electrode having a thickness of 0.4 μm or less can be formed.

Meanwhile, the coating layer including Sn formed on the surface of the conductive powder may further include at least one of Cu, Ag, Pd, Pt, Rh, Ir, and Ru.

In addition, the conductive powder including Sn in the form of an alloy may further include at least one of Cu, Ag, Pd, Pt, Rh, Ir, and Ru in the form of an alloy.

In addition, the coating layer including Sn formed on the surface of the conductive powder may further include at least one of W, Mo, Cr, and Co.

In addition, the conductive powder containing Sn in the form of an alloy may further include at least one of W, Mo, Cr, and Co in the form of an alloy.

Since W, Mo, Cr and Co have a high melting point, it can serve to further improve the effect of inhibiting the growth of crystal grains by Sn having a low melting point.

In addition, the coating layer including Sn formed on the surface of the conductive powder may be formed by an atomic layer deposition method.

Atomic Layer Deposition (ALD) is a technology that deposits a thin film or a protective film on the surface of a substrate during semiconductor processing. Unlike the existing deposition technology that chemically coats a thin film, it is a technology that grows thin films by stacking atomic layers one by one. The atomic layer deposition method has advantages of excellent step-coverage, easy thin film thickness control, and uniform thin film formation.

A dense and uniform Sn coating layer can be formed by forming a coating layer containing Sn formed on the surface of the conductive powder by an atomic layer deposition method.

In addition, the internal electrode paste may further include 300 ppm or less (excluding 0) S compared to the conductive powder content.

In general, the conductive paste for forming the internal electrode may contain sulfur (S) as a shrinkage retardant, but if the content is more than 300 ppm, there is a risk of non-uniform formation of the composite layer including Ni and Sn after firing have.

Meanwhile, the conductive powder may be a Ni powder having a higher melting point than Sn.

forming a ceramic laminate

A ceramic laminate is formed by stacking ceramic green sheets on which internal electrode patterns are formed.

At this time, the ceramic laminate can be pressed from the lamination direction to be crimped.

Next, the ceramic multilayer body may be cut and chipped for each region corresponding to one capacitor.

In this case, one end of the internal electrode pattern may be cut to be alternately exposed through the side surface. Accordingly, as shown in FIG. 2 , the ceramic green sheet (a) and the ceramic green sheet (S) in which the internal electrode pattern P1 which becomes the first internal electrode 121 after firing is formed on the ceramic green sheet S ) on which the ceramic green sheets b having internal electrode patterns P2 that become the second internal electrodes 122 after firing are alternately stacked on each other may be formed.

Steps to form the body

The ceramic laminate is fired to form a body including a dielectric layer and an internal electrode.

The firing process may be performed in a reducing atmosphere. In addition, the calcination process may be performed by controlling the temperature increase rate, but is not limited thereto, and the temperature increase rate may be 30°C/60s to 50°C/60s at 700°C or less.

Next, an external electrode may be formed to cover the side surface of the body and to be electrically connected to the internal electrode exposed to the side surface of the body. Thereafter, a plating layer such as nickel or tin may be formed on the surface of the external electrode.

The size of the body does not need to be particularly limited.

However, in order to achieve miniaturization and high capacity at the same time, since it is necessary to increase the number of stacks by making the thickness of the dielectric layer and the internal electrode thin, the electrode according to the present invention is broken and The effect of inhibiting the increase in agglomeration may be more pronounced. Accordingly, the length of the body may be 0.4 mm or less, and the thickness may be 0.2 mm or less.

Multilayer Ceramic Electronic Components

The multilayer ceramic electronic component 100 manufactured by the method of manufacturing the multilayer ceramic electronic component according to the exemplary embodiment described above includes a body 110 including a dielectric layer 111 and internal electrodes 121 and 122 ; and external electrodes 131 and 132 disposed on the body 110, wherein the internal electrodes 121 and 122 surround the metal crystal grains 121a and the metal crystal grains 121a and include Ni and Sn. and a composite layer 121b.

In the body 110 , a dielectric layer 111 and internal electrodes 121 and 122 are alternately stacked.

Although the specific shape of the body 110 is not particularly limited, as shown, the body 110 may have a hexahedral shape or a shape similar thereto. Due to the shrinkage of the ceramic powder included in the body 110 during the firing process, the body 110 may not have a perfectly straight hexahedral shape, but may have a substantially hexahedral shape.

The body 110 is connected to the first and second surfaces 1 and 2 facing each other in the thickness direction (Z direction), the first and second surfaces 1 and 2, and is connected to each other in the width direction (Y direction) The third and fourth surfaces 3 and 4 opposite to each other, the first and second surfaces 1 and 2 are connected, and the third and fourth surfaces 3 and 4 are connected to each other in the longitudinal direction (X direction). It may have opposing fifth and sixth surfaces 5 , 6 .

The plurality of dielectric layers 111 forming the body 110 are in a fired state, and the boundary between adjacent dielectric layers 111 can be integrated to the extent that it is difficult to check without using a scanning electron microscope (SEM). have.

The raw material for forming the dielectric layer 111 is not particularly limited as long as sufficient capacitance can be obtained, and for example, barium titanate (BaTiO ₃ ) powder may be used. As a material for forming the dielectric layer 111 , various ceramic additives, organic solvents, plasticizers, binders, dispersants, etc. may be added to powder such as _{barium titanate (BaTiO 3 ) according to the purpose of the present invention.}

The upper and lower portions of the body 110, that is, both ends in the thickness direction (Z direction), may include a cover layer 112 formed by stacking dielectric layers on which internal electrodes are not formed, respectively. The cover layer 112 may serve to maintain reliability of the capacitor against external impact.

The thickness of the cover layer 112 does not need to be particularly limited. However, in order to more easily achieve miniaturization and high capacity of the capacitor component, the thickness of the cover layer 112 may be 20 μm or less.

The thickness of the dielectric layer 111 does not need to be particularly limited.

However, according to the present invention, since the increase in electrode breakage and aggregation can be effectively suppressed even when the dielectric layer and the internal electrode are very thin, the thickness of the dielectric layer 111 is 0.4 μm in order to more easily achieve miniaturization and high capacity of the capacitor component. may be below.

The thickness of the dielectric layer 111 may mean an average thickness of the dielectric layer 111 disposed between the first and second internal electrodes 121 and 122 .

The average thickness of the dielectric layer 111 may be measured by scanning an image of the length and thickness direction (L-T) cross-section of the body 110 with a scanning electron microscope (SEM).

For example, with respect to an arbitrary dielectric layer extracted from an image scanned with a scanning electron microscope (SEM) of a cross section in the length and thickness direction (LT) cut in the center of the width direction of the body 110, in the longitudinal direction The average value can be measured by measuring the thickness at 30 equally spaced points.

The 30 equally spaced points may be measured in the capacitor forming part, which means a region where the first and second internal electrodes 121 and 122 overlap each other.

Next, the internal electrodes 121 and 122 are alternately stacked with dielectric layers, and may include first and second internal electrodes 121 and 122 . The first and second internal electrodes 121 and 122 are alternately disposed to face each other with the dielectric layer 111 constituting the body 110 interposed therebetween, and the third and fourth surfaces 3 and 4 of the body 110 . ) can be exposed respectively.

In this case, the first and second internal electrodes 121 and 122 may be electrically separated from each other by the dielectric layer 111 disposed in the middle.

The method for printing the conductive paste may use a screen printing method or a gravure printing method, but the present invention is not limited thereto.

Hereinafter, although description will be made with reference to FIG. 5 , which is a diagram of the first internal electrode 121 , the same may be applied to the second internal electrode 122 .

The internal electrode 121 includes a metal crystal grain 121a and a composite layer 121b surrounding the metal crystal grain and including Ni and Sn. The composite layer 121b including Ni and Sn may have a form that almost completely surrounds at least one metal crystal grain 121a.

The metal crystal grains 121a are polyhedrons formed by regularly arranging metal atoms. The composite layer 121b including Ni and Sn surrounds the metal crystal grains 121a. That is, the composite layer 121b including Ni and Sn exists at a metal grain boundary. The composite layer 121b including Ni and Sn suppresses the external growth of the metal crystal grains 121a, thereby suppressing internal electrode breakage and inhibiting internal electrode aggregation.

When the ratio of the length of the portion where the internal electrode is actually formed to the total length of the internal electrode 121 is defined as the interconnectivity (C) of the internal electrode, the composite layer 121b including Ni and Sn is formed by the metal grains 121a. By suppressing this external growth, the internal electrode 121 can satisfy 85%≤C.

The thickness of the composite layer 121b including Ni and Sn may be 1 to 15 nm.

When the thickness of the composite layer 121b containing Ni and Sn is less than 1 nm, it may not be possible to sufficiently suppress the growth of metal grains to the outside, and when it exceeds 15 nm, the composite layer 121b containing Ni and Sn. is not uniform in thickness, so the effect of inhibiting the growth of metal grains to the outside may be reduced.

The metal grains 121a may be Ni grains.

Meanwhile, the thicknesses of the first and second internal electrodes 121 and 122 do not need to be particularly limited.

However, according to the present invention, since the increase in electrode breakage and aggregation can be effectively suppressed even when the dielectric layer and the internal electrode are very thin, the first and second internal electrodes 121 can more easily achieve miniaturization and high capacity of capacitor components , 122) may have a thickness of 0.4 μm or less.

The thickness of the first and second internal electrodes 121 and 122 may mean an average thickness of the first and second internal electrodes 121 and 122 .

The average thickness of the first and second internal electrodes 121 and 122 may be measured by scanning an image of the length and thickness direction (LT) cross-section of the body 110 with a scanning electron microscope (SEM). .

Any first and With respect to the second internal electrodes 121 and 122 , an average value may be measured by measuring the thicknesses at 30 points equally spaced in the longitudinal direction.

The 30 equally spaced points may be measured in the capacitor forming part, which means a region where the first and second internal electrodes 121 and 122 overlap each other.

The external electrodes 131 and 132 are disposed on the body 110 and are connected to the internal electrodes 121 and 122 . As shown in FIG. 4 , first and second external electrodes 131 and 132 respectively connected to the first and second internal electrodes 121 and 122 may be included. Although the structure in which the capacitor component 100 has two external electrodes 131 and 132 is described in this embodiment, the number and shape of the external electrodes 131 and 132 depends on the shape of the internal electrodes 121 and 122 or the like. It may be changed according to other purposes.

On the other hand, the external electrodes 131 and 132 may be formed using any material as long as they have electrical conductivity, such as metal, and specific materials may be determined in consideration of electrical characteristics and structural stability, and further may have a multi-layered structure. have.

For example, the external electrodes 131 and 132 may include electrode layers 131a and 132a disposed on the body 110 and plating layers 131b and 132b formed on the electrode layers 131a and 132a.

As a more specific example of the electrode layers 131a and 132a, the electrode layers 131a and 132a may be fired electrodes including a conductive metal and glass, and the conductive metal may be Cu. Also, the electrode layers 131a and 132a may be resin-based electrodes including a plurality of metal particles and a conductive resin.

As a more specific example of the plating layers 131b and 132b, the plating layers 131b and 132b may be a Ni plating layer or a Sn plating layer, and a Ni plating layer and a Sn plating layer may be sequentially formed on the electrode layers 131a and 132a. and may include a plurality of Ni plating layers and/or a plurality of Sn plating layers.

The size of the multilayer ceramic electronic component does not need to be particularly limited.

However, in order to achieve miniaturization and high capacity at the same time, since it is necessary to increase the number of stacks by making the thickness of the dielectric layer and the internal electrode thin, the electrode according to the present invention is broken and The effect of inhibiting the increase in agglomeration may be more pronounced. Accordingly, the multilayer ceramic electronic component may have a length of 0.4 mm or less and a thickness of 0.2 mm or less.

Although the embodiment of the present invention has been described in detail above, the present invention is not limited by the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims. Accordingly, various types of substitution, modification and change will be possible by those skilled in the art within the scope not departing from the technical spirit of the present invention described in the claims, and it is also said that it falls within the scope of the present invention. something to do.

100: multilayer ceramic electronic component
110: body
111: dielectric layer
112: cover layer
121, 122: internal electrode
121a: metal grains
121b: Composite layer containing Ni and Sn
131, 132: external electrode
131a: electrode layer
132b: plating layer

Claims (17)

providing a ceramic green sheet;
forming an internal electrode pattern by applying a conductive powder having a coating layer containing Sn on the surface thereof or an internal electrode paste containing a conductive powder containing Sn in an alloy form on the ceramic green sheet;
forming a ceramic laminate by stacking the ceramic green sheets on which the internal electrode patterns are formed; and
sintering the ceramic laminate to form a body including a dielectric layer and an internal electrode;
The Sn content compared to the conductive powder is 1.5wt% or more,
The internal electrode includes a composite layer including Ni and Sn at an interface with the dielectric layer
A method for manufacturing a multilayer ceramic electronic component.
According to claim 1,
The thickness of the inner electrode pattern is 0.5 μm or less.
A method for manufacturing a multilayer ceramic electronic component.
According to claim 1,
The coating layer further comprises at least one of Cu, Ag, Pd, Pt, Rh, Ir and Ru
A method for manufacturing a multilayer ceramic electronic component.
According to claim 1,
The coating layer further comprises at least one of W, Mo, Cr and Co
A method for manufacturing a multilayer ceramic electronic component.
According to claim 1,
The coating layer is formed by an atomic layer deposition method
A method for manufacturing a multilayer ceramic electronic component.
According to claim 1,
The conductive powder containing Sn in the form of an alloy further comprises at least one of Cu, Ag, Pd, Pt, Rh, Ir and Ru in the form of an alloy.
A method for manufacturing a multilayer ceramic electronic component.
According to claim 1,
The conductive powder containing Sn in the form of an alloy further comprises at least one of W, Mo, Cr, and Co in the form of an alloy.
A method for manufacturing a multilayer ceramic electronic component.
According to claim 1,
The conductive powder further comprises 300 ppm or less of S compared to the content of the conductive powder
A method for manufacturing a multilayer ceramic electronic component.
The method of claim 1,
The conductive powder is Ni powder
A method for manufacturing a multilayer ceramic electronic component.
According to claim 1,
The body has a length of 0.4 mm or less and a thickness of 0.2 mm or less
A method for manufacturing a multilayer ceramic electronic component.
According to claim 1,
The thickness of the ceramic green sheet is 0.6㎛ or less.
A method for manufacturing a multilayer ceramic electronic component.
According to claim 1,
The thickness of the inner electrode is less than 0.4㎛
A method for manufacturing a multilayer ceramic electronic component.
According to claim 1,
The thickness of the composite layer containing Ni and Sn is 1 ~ 15nm
A method for manufacturing a multilayer ceramic electronic component.
According to claim 1,
The internal electrode includes a plurality of metal crystal grains, and the metal crystal grains are Ni crystal grains.
A method for manufacturing a multilayer ceramic electronic component.
According to claim 1,
The inner electrode is
If the ratio of the length of the portion where the internal electrode is actually formed to the total length of the internal electrode is defined as the interconnectivity (C) of the internal electrode, 85%≤C is satisfied.
A method for manufacturing a multilayer ceramic electronic component.
According to claim 1,
The thickness of the dielectric layer is 0.4 μm or less.
A method for manufacturing a multilayer ceramic electronic component.
According to claim 1,
The internal electrode includes a plurality of metal grains,
The composite layer including Sn and Ni is additionally disposed at the interface between the plurality of metal crystal grains.
A method for manufacturing a multilayer ceramic electronic component.

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