KR102333504B1 - 계측 타겟의 편광 측정 및 대응 타겟 설계 - Google Patents

계측 타겟의 편광 측정 및 대응 타겟 설계 Download PDF

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KR102333504B1
KR102333504B1 KR1020217014021A KR20217014021A KR102333504B1 KR 102333504 B1 KR102333504 B1 KR 102333504B1 KR 1020217014021 A KR1020217014021 A KR 1020217014021A KR 20217014021 A KR20217014021 A KR 20217014021A KR 102333504 B1 KR102333504 B1 KR 102333504B1
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segmented
metrology
polarization
metrology target
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KR20210057833A (ko
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에란 아밋
배리 로에브스키
앤드류 힐
암논 마나센
누리엘 아미르
블라디미르 레빈스키
로이에 볼코비치
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/392—Floor-planning or layout, e.g. partitioning or placement
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
    • H01L22/30—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2290/00—Aspects of interferometers not specifically covered by any group under G01B9/02
    • G01B2290/70—Using polarization in the interferometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8848—Polarisation of light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • Architecture (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
KR1020217014021A 2013-06-27 2014-06-26 계측 타겟의 편광 측정 및 대응 타겟 설계 Active KR102333504B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201361840339P 2013-06-27 2013-06-27
US61/840,339 2013-06-27
US201361916018P 2013-12-13 2013-12-13
US61/916,018 2013-12-13
PCT/US2014/044440 WO2014210381A1 (en) 2013-06-27 2014-06-26 Polarization measurements of metrology targets and corresponding target designs
KR1020167001849A KR102252341B1 (ko) 2013-06-27 2014-06-26 계측 타겟의 편광 측정 및 대응 타겟 설계

Related Parent Applications (1)

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KR1020167001849A Division KR102252341B1 (ko) 2013-06-27 2014-06-26 계측 타겟의 편광 측정 및 대응 타겟 설계

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KR20210057833A KR20210057833A (ko) 2021-05-21
KR102333504B1 true KR102333504B1 (ko) 2021-12-01

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KR1020167001849A Active KR102252341B1 (ko) 2013-06-27 2014-06-26 계측 타겟의 편광 측정 및 대응 타겟 설계

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Country Link
US (2) US10458777B2 (https=)
JP (2) JP6602755B2 (https=)
KR (2) KR102333504B1 (https=)
CN (2) CN105408721B (https=)
TW (1) TWI675998B (https=)
WO (1) WO2014210381A1 (https=)

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TWI603216B (zh) * 2012-11-21 2017-10-21 克萊譚克公司 處理相容分段目標及設計方法
US9851300B1 (en) * 2014-04-04 2017-12-26 Kla-Tencor Corporation Decreasing inaccuracy due to non-periodic effects on scatterometric signals
US10228320B1 (en) 2014-08-08 2019-03-12 KLA—Tencor Corporation Achieving a small pattern placement error in metrology targets
KR102574171B1 (ko) * 2014-08-29 2023-09-06 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법, 타겟 및 기판
JP6789295B2 (ja) * 2015-12-08 2020-11-25 ケーエルエー コーポレイション 偏光ターゲットおよび偏光照明を用いた回折光の振幅および位相の制御
US10897566B2 (en) 2016-09-28 2021-01-19 Kla-Tencor Corporation Direct focusing with image binning in metrology tools
WO2018226215A1 (en) * 2017-06-06 2018-12-13 Kla-Tencor Corporation Reticle optimization algorithms and optimal target design
US10409948B1 (en) * 2017-09-29 2019-09-10 Cadence Design Systems, Inc. Topology preserving schematic transformations for RF net editing
US10837919B2 (en) 2017-11-06 2020-11-17 Kla Corporation Single cell scatterometry overlay targets
WO2021144066A1 (en) * 2020-01-16 2021-07-22 Asml Netherlands B.V. Substrate, patterning device and lithographic apparatuses
JP2025504941A (ja) * 2022-01-28 2025-02-19 ディー・ツー・エス・インコーポレイテッド レチクル強化技術のための方法及びシステム
KR102767520B1 (ko) * 2022-10-12 2025-02-14 (주)힉스컴퍼니 디지털 홀로그래픽 현미경을 제어하는 방법 및 장치
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US20140240705A1 (en) 2013-02-27 2014-08-28 Kabushiki Kaisha Toshiba Semiconductor device, reticle method for checking position misalignment and method for manufacturing position misalignment checking mark

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Also Published As

Publication number Publication date
KR20210057833A (ko) 2021-05-21
WO2014210381A1 (en) 2014-12-31
US20200158492A1 (en) 2020-05-21
CN111043958A (zh) 2020-04-21
US20160178351A1 (en) 2016-06-23
KR102252341B1 (ko) 2021-05-18
TWI675998B (zh) 2019-11-01
US10458777B2 (en) 2019-10-29
US11060845B2 (en) 2021-07-13
TW201510469A (zh) 2015-03-16
CN111043958B (zh) 2021-11-16
CN105408721B (zh) 2020-01-10
JP2020074387A (ja) 2020-05-14
JP6602755B2 (ja) 2019-11-06
JP2016524155A (ja) 2016-08-12
KR20160027017A (ko) 2016-03-09
CN105408721A (zh) 2016-03-16
JP6875483B2 (ja) 2021-05-26

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