CN105408721B - 计量学目标的极化测量及对应的目标设计 - Google Patents

计量学目标的极化测量及对应的目标设计 Download PDF

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CN105408721B
CN105408721B CN201480041321.4A CN201480041321A CN105408721B CN 105408721 B CN105408721 B CN 105408721B CN 201480041321 A CN201480041321 A CN 201480041321A CN 105408721 B CN105408721 B CN 105408721B
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CN105408721A (zh
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依兰·阿米特
巴瑞·罗维斯凯
安德鲁·希尔
阿姆农·玛纳森
努里尔·阿米尔
弗拉基米尔·莱温斯基
罗伊·弗克维奇
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KLA Corp
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KLA Tencor Corp
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/26Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/30Circuit design
    • G06F30/39Circuit design at the physical level
    • G06F30/392Floor-planning or layout, e.g. partitioning or placement
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/30Circuit design
    • G06F30/39Circuit design at the physical level
    • G06F30/398Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2290/00Aspects of interferometers not specifically covered by any group under G01B9/02
    • G01B2290/70Using polarization in the interferometer
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • G01N2021/8848Polarisation of light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27Structural arrangements therefor

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
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  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • Architecture (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
CN201480041321.4A 2013-06-27 2014-06-26 计量学目标的极化测量及对应的目标设计 Active CN105408721B (zh)

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US201361840339P 2013-06-27 2013-06-27
US61/840,339 2013-06-27
US201361916018P 2013-12-13 2013-12-13
US61/916,018 2013-12-13
PCT/US2014/044440 WO2014210381A1 (en) 2013-06-27 2014-06-26 Polarization measurements of metrology targets and corresponding target designs

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US (2) US10458777B2 (https=)
JP (2) JP6602755B2 (https=)
KR (2) KR102333504B1 (https=)
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US10228320B1 (en) 2014-08-08 2019-03-12 KLA—Tencor Corporation Achieving a small pattern placement error in metrology targets
KR102574171B1 (ko) * 2014-08-29 2023-09-06 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법, 타겟 및 기판
JP6789295B2 (ja) * 2015-12-08 2020-11-25 ケーエルエー コーポレイション 偏光ターゲットおよび偏光照明を用いた回折光の振幅および位相の制御
US10897566B2 (en) 2016-09-28 2021-01-19 Kla-Tencor Corporation Direct focusing with image binning in metrology tools
WO2018226215A1 (en) * 2017-06-06 2018-12-13 Kla-Tencor Corporation Reticle optimization algorithms and optimal target design
US10409948B1 (en) * 2017-09-29 2019-09-10 Cadence Design Systems, Inc. Topology preserving schematic transformations for RF net editing
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WO2021144066A1 (en) * 2020-01-16 2021-07-22 Asml Netherlands B.V. Substrate, patterning device and lithographic apparatuses
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KR102767520B1 (ko) * 2022-10-12 2025-02-14 (주)힉스컴퍼니 디지털 홀로그래픽 현미경을 제어하는 방법 및 장치
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KR20210057833A (ko) 2021-05-21
WO2014210381A1 (en) 2014-12-31
US20200158492A1 (en) 2020-05-21
CN111043958A (zh) 2020-04-21
US20160178351A1 (en) 2016-06-23
KR102252341B1 (ko) 2021-05-18
TWI675998B (zh) 2019-11-01
KR102333504B1 (ko) 2021-12-01
US10458777B2 (en) 2019-10-29
US11060845B2 (en) 2021-07-13
TW201510469A (zh) 2015-03-16
CN111043958B (zh) 2021-11-16
JP2020074387A (ja) 2020-05-14
JP6602755B2 (ja) 2019-11-06
JP2016524155A (ja) 2016-08-12
KR20160027017A (ko) 2016-03-09
CN105408721A (zh) 2016-03-16
JP6875483B2 (ja) 2021-05-26

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