KR102322816B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR102322816B1
KR102322816B1 KR1020160181293A KR20160181293A KR102322816B1 KR 102322816 B1 KR102322816 B1 KR 102322816B1 KR 1020160181293 A KR1020160181293 A KR 1020160181293A KR 20160181293 A KR20160181293 A KR 20160181293A KR 102322816 B1 KR102322816 B1 KR 102322816B1
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KR
South Korea
Prior art keywords
electromagnetic induction
rotary table
opening
cylindrical electrode
plasma
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KR1020160181293A
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English (en)
Korean (ko)
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KR20170077840A (ko
Inventor
다이스케 오노
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시바우라 메카트로닉스 가부시끼가이샤
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Publication of KR20170077840A publication Critical patent/KR20170077840A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
KR1020160181293A 2015-12-28 2016-12-28 플라즈마 처리 장치 Active KR102322816B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2015-257353 2015-12-28
JP2015257353 2015-12-28
JPJP-P-2016-251556 2016-12-26
JP2016251556A JP6800009B2 (ja) 2015-12-28 2016-12-26 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20170077840A KR20170077840A (ko) 2017-07-06
KR102322816B1 true KR102322816B1 (ko) 2021-11-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160181293A Active KR102322816B1 (ko) 2015-12-28 2016-12-28 플라즈마 처리 장치

Country Status (4)

Country Link
JP (1) JP6800009B2 (https=)
KR (1) KR102322816B1 (https=)
CN (1) CN107012436B (https=)
TW (1) TWI604758B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7000083B2 (ja) * 2017-09-07 2022-01-19 芝浦メカトロニクス株式会社 成膜装置
JP7144219B2 (ja) * 2018-03-22 2022-09-29 芝浦メカトロニクス株式会社 真空処理装置及びトレイ
JP7141989B2 (ja) * 2018-09-28 2022-09-26 芝浦メカトロニクス株式会社 成膜装置
CN109603450A (zh) * 2019-02-20 2019-04-12 北京卓昱科技有限公司 一种智能电子烟气净化系统
JP7469303B2 (ja) * 2019-06-06 2024-04-16 芝浦メカトロニクス株式会社 成膜装置
JP7111380B2 (ja) * 2020-04-01 2022-08-02 株式会社シンクロン スパッタ装置及びこれを用いた成膜方法
JP7805737B2 (ja) * 2021-09-28 2026-01-26 芝浦メカトロニクス株式会社 成膜装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002256428A (ja) * 2001-02-28 2002-09-11 Shibaura Mechatronics Corp スパッタリング装置
JP2007059103A (ja) * 2005-08-22 2007-03-08 Shibaura Mechatronics Corp プラズマ処理装置
JP5072096B2 (ja) 2005-09-09 2012-11-14 株式会社アルバック イオン源およびプラズマ処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0663107B2 (ja) * 1984-11-14 1994-08-17 東京エレクトロン山梨株式会社 平行平板型ドライエツチング装置
JP3371176B2 (ja) * 1995-01-25 2003-01-27 ソニー株式会社 プラズマ処理装置および半導体装置の製造方法
US5716505A (en) * 1996-02-23 1998-02-10 Balzers Prozess-Systems Gmbh Apparatus for coating substrates by cathode sputtering with a hollow target
JP4212210B2 (ja) * 1999-12-07 2009-01-21 株式会社小松製作所 表面処理装置
JP5420835B2 (ja) * 2005-08-02 2014-02-19 株式会社ピュアロンジャパン プラズマ発生装置およびこれを用いた成膜方法
US8066857B2 (en) * 2008-12-12 2011-11-29 Fujifilm Corporation Shaped anode and anode-shield connection for vacuum physical vapor deposition
JP5350043B2 (ja) * 2009-03-31 2013-11-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002256428A (ja) * 2001-02-28 2002-09-11 Shibaura Mechatronics Corp スパッタリング装置
JP2007059103A (ja) * 2005-08-22 2007-03-08 Shibaura Mechatronics Corp プラズマ処理装置
JP5072096B2 (ja) 2005-09-09 2012-11-14 株式会社アルバック イオン源およびプラズマ処理装置

Also Published As

Publication number Publication date
KR20170077840A (ko) 2017-07-06
TWI604758B (zh) 2017-11-01
CN107012436A (zh) 2017-08-04
TW201724919A (zh) 2017-07-01
JP2017120781A (ja) 2017-07-06
CN107012436B (zh) 2019-08-16
JP6800009B2 (ja) 2020-12-16

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