KR102312239B1 - 취약한 패턴 정량화를 위한 방법 및 시스템 - Google Patents

취약한 패턴 정량화를 위한 방법 및 시스템 Download PDF

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KR102312239B1
KR102312239B1 KR1020197021049A KR20197021049A KR102312239B1 KR 102312239 B1 KR102312239 B1 KR 102312239B1 KR 1020197021049 A KR1020197021049 A KR 1020197021049A KR 20197021049 A KR20197021049 A KR 20197021049A KR 102312239 B1 KR102312239 B1 KR 102312239B1
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South Korea
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pattern
pattern type
instances
patterns
identify
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Korean (ko)
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KR20190090035A (ko
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앤드류 크로스
알렌 박
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케이엘에이 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/266—Measurement of magnetic or electric fields in the object; Lorentzmicroscopy
    • H01J37/268—Measurement of magnetic or electric fields in the object; Lorentzmicroscopy with scanning beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H01L22/26—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • H01L21/0274—
    • H01L22/12—
    • H01L22/32—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/273—Interconnections for measuring or testing, e.g. probe pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Image Analysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020197021049A 2016-12-21 2017-12-18 취약한 패턴 정량화를 위한 방법 및 시스템 Active KR102312239B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662437585P 2016-12-21 2016-12-21
US62/437,585 2016-12-21
US15/729,458 2017-10-10
US15/729,458 US10262831B2 (en) 2016-12-21 2017-10-10 Method and system for weak pattern quantification
PCT/US2017/067092 WO2018118805A1 (en) 2016-12-21 2017-12-18 Method and system for weak pattern quantification

Publications (2)

Publication Number Publication Date
KR20190090035A KR20190090035A (ko) 2019-07-31
KR102312239B1 true KR102312239B1 (ko) 2021-10-12

Family

ID=62561935

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197021049A Active KR102312239B1 (ko) 2016-12-21 2017-12-18 취약한 패턴 정량화를 위한 방법 및 시스템

Country Status (6)

Country Link
US (1) US10262831B2 (https=)
JP (1) JP6934944B2 (https=)
KR (1) KR102312239B1 (https=)
CN (1) CN110402485B (https=)
TW (1) TWI767967B (https=)
WO (1) WO2018118805A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3290911A1 (en) * 2016-09-02 2018-03-07 ASML Netherlands B.V. Method and system to monitor a process apparatus
US11550309B2 (en) * 2019-01-08 2023-01-10 Kla Corporation Unsupervised defect segmentation
KR102946615B1 (ko) 2020-12-28 2026-04-01 삼성전자주식회사 반도체 집적회로 레이아웃의 확률적 취약점 검출 방법 및 이를 수행하는 컴퓨터 시스템
US12235224B2 (en) * 2021-12-08 2025-02-25 Kla Corporation Process window qualification modulation layouts
CN116228773B (zh) * 2023-05-09 2023-08-04 华芯程(杭州)科技有限公司 一种晶圆检测机台的量测数据校准方法、装置及设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005259830A (ja) 2004-03-10 2005-09-22 Hitachi High-Technologies Corp 半導体デバイスのパターン形状評価方法及びその装置
JP2015060667A (ja) 2013-09-17 2015-03-30 国能科技創新有限公司 空気電池、空気電池用負極及び空気電池ユニット
US20160284579A1 (en) 2015-03-23 2016-09-29 Applied Materials Israel Ltd. Process window analysis

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6603873B1 (en) * 1999-11-12 2003-08-05 Applied Materials, Inc. Defect detection using gray level signatures
US7711514B2 (en) * 2007-08-10 2010-05-04 Kla-Tencor Technologies Corp. Computer-implemented methods, carrier media, and systems for generating a metrology sampling plan
JP2008147679A (ja) * 2007-12-17 2008-06-26 Hitachi Ltd 電子線応用装置
JP5075646B2 (ja) 2008-01-09 2012-11-21 株式会社日立ハイテクノロジーズ 半導体欠陥検査装置ならびにその方法
JP5254270B2 (ja) * 2010-04-09 2013-08-07 株式会社ニューフレアテクノロジー 検査方法および検査装置
KR20120066158A (ko) 2010-12-14 2012-06-22 삼성전자주식회사 테스트 방법 및 이를 수행하기 위한 장치
JP6078234B2 (ja) 2012-04-13 2017-02-08 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP5478681B2 (ja) * 2012-08-24 2014-04-23 株式会社日立ハイテクノロジーズ 半導体欠陥検査装置ならびにその方法
US9536299B2 (en) * 2014-01-16 2017-01-03 Kla-Tencor Corp. Pattern failure discovery by leveraging nominal characteristics of alternating failure modes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005259830A (ja) 2004-03-10 2005-09-22 Hitachi High-Technologies Corp 半導体デバイスのパターン形状評価方法及びその装置
JP2015060667A (ja) 2013-09-17 2015-03-30 国能科技創新有限公司 空気電池、空気電池用負極及び空気電池ユニット
US20160284579A1 (en) 2015-03-23 2016-09-29 Applied Materials Israel Ltd. Process window analysis

Also Published As

Publication number Publication date
CN110402485A (zh) 2019-11-01
WO2018118805A1 (en) 2018-06-28
CN110402485B (zh) 2020-10-27
US20180174797A1 (en) 2018-06-21
JP2020504443A (ja) 2020-02-06
KR20190090035A (ko) 2019-07-31
TW201838054A (zh) 2018-10-16
US10262831B2 (en) 2019-04-16
JP6934944B2 (ja) 2021-09-15
TWI767967B (zh) 2022-06-21

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