CN110402485B - 用于弱图案量化的方法及系统 - Google Patents

用于弱图案量化的方法及系统 Download PDF

Info

Publication number
CN110402485B
CN110402485B CN201780086453.2A CN201780086453A CN110402485B CN 110402485 B CN110402485 B CN 110402485B CN 201780086453 A CN201780086453 A CN 201780086453A CN 110402485 B CN110402485 B CN 110402485B
Authority
CN
China
Prior art keywords
pattern type
pattern
instances
group
identify
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780086453.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN110402485A (zh
Inventor
A·克罗斯
A·帕克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Publication of CN110402485A publication Critical patent/CN110402485A/zh
Application granted granted Critical
Publication of CN110402485B publication Critical patent/CN110402485B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/266—Measurement of magnetic or electric fields in the object; Lorentzmicroscopy
    • H01J37/268—Measurement of magnetic or electric fields in the object; Lorentzmicroscopy with scanning beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/273—Interconnections for measuring or testing, e.g. probe pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Image Analysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201780086453.2A 2016-12-21 2017-12-18 用于弱图案量化的方法及系统 Active CN110402485B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662437585P 2016-12-21 2016-12-21
US62/437,585 2016-12-21
US15/729,458 2017-10-10
US15/729,458 US10262831B2 (en) 2016-12-21 2017-10-10 Method and system for weak pattern quantification
PCT/US2017/067092 WO2018118805A1 (en) 2016-12-21 2017-12-18 Method and system for weak pattern quantification

Publications (2)

Publication Number Publication Date
CN110402485A CN110402485A (zh) 2019-11-01
CN110402485B true CN110402485B (zh) 2020-10-27

Family

ID=62561935

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780086453.2A Active CN110402485B (zh) 2016-12-21 2017-12-18 用于弱图案量化的方法及系统

Country Status (6)

Country Link
US (1) US10262831B2 (https=)
JP (1) JP6934944B2 (https=)
KR (1) KR102312239B1 (https=)
CN (1) CN110402485B (https=)
TW (1) TWI767967B (https=)
WO (1) WO2018118805A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3290911A1 (en) * 2016-09-02 2018-03-07 ASML Netherlands B.V. Method and system to monitor a process apparatus
US11550309B2 (en) * 2019-01-08 2023-01-10 Kla Corporation Unsupervised defect segmentation
KR102946615B1 (ko) 2020-12-28 2026-04-01 삼성전자주식회사 반도체 집적회로 레이아웃의 확률적 취약점 검출 방법 및 이를 수행하는 컴퓨터 시스템
US12235224B2 (en) * 2021-12-08 2025-02-25 Kla Corporation Process window qualification modulation layouts
CN116228773B (zh) * 2023-05-09 2023-08-04 华芯程(杭州)科技有限公司 一种晶圆检测机台的量测数据校准方法、装置及设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005259830A (ja) * 2004-03-10 2005-09-22 Hitachi High-Technologies Corp 半導体デバイスのパターン形状評価方法及びその装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6603873B1 (en) * 1999-11-12 2003-08-05 Applied Materials, Inc. Defect detection using gray level signatures
US7711514B2 (en) * 2007-08-10 2010-05-04 Kla-Tencor Technologies Corp. Computer-implemented methods, carrier media, and systems for generating a metrology sampling plan
JP2008147679A (ja) * 2007-12-17 2008-06-26 Hitachi Ltd 電子線応用装置
JP5075646B2 (ja) 2008-01-09 2012-11-21 株式会社日立ハイテクノロジーズ 半導体欠陥検査装置ならびにその方法
JP5254270B2 (ja) * 2010-04-09 2013-08-07 株式会社ニューフレアテクノロジー 検査方法および検査装置
KR20120066158A (ko) 2010-12-14 2012-06-22 삼성전자주식회사 테스트 방법 및 이를 수행하기 위한 장치
JP6078234B2 (ja) 2012-04-13 2017-02-08 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP5478681B2 (ja) * 2012-08-24 2014-04-23 株式会社日立ハイテクノロジーズ 半導体欠陥検査装置ならびにその方法
JP2015060667A (ja) 2013-09-17 2015-03-30 国能科技創新有限公司 空気電池、空気電池用負極及び空気電池ユニット
US9536299B2 (en) * 2014-01-16 2017-01-03 Kla-Tencor Corp. Pattern failure discovery by leveraging nominal characteristics of alternating failure modes
US10312161B2 (en) 2015-03-23 2019-06-04 Applied Materials Israel Ltd. Process window analysis

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005259830A (ja) * 2004-03-10 2005-09-22 Hitachi High-Technologies Corp 半導体デバイスのパターン形状評価方法及びその装置

Also Published As

Publication number Publication date
CN110402485A (zh) 2019-11-01
WO2018118805A1 (en) 2018-06-28
US20180174797A1 (en) 2018-06-21
JP2020504443A (ja) 2020-02-06
KR20190090035A (ko) 2019-07-31
TW201838054A (zh) 2018-10-16
US10262831B2 (en) 2019-04-16
KR102312239B1 (ko) 2021-10-12
JP6934944B2 (ja) 2021-09-15
TWI767967B (zh) 2022-06-21

Similar Documents

Publication Publication Date Title
JP7026719B2 (ja) 光学式検査及び光学式レビューからの欠陥属性に基づく電子ビームレビューのための欠陥サンプリング
EP3549158B1 (en) Metrology recipe generation using predicted metrology images
CN112219111B (zh) 使用于晶片噪声公害识别的扫描式电子显微镜及光学图像相关
JP7080884B2 (ja) 三次元半導体構造の検査用の欠陥発見およびレシピ最適化
CN110402485B (zh) 用于弱图案量化的方法及系统
JP6719462B2 (ja) プロセスウィンドウキャラクタライゼーションのための仮想検査システム
JP4996856B2 (ja) 欠陥検査装置およびその方法
JP7037632B2 (ja) 効率的プロセスウィンドウ発見用ハイブリッド検査システム
JP2019535143A (ja) 半導体ウェハ検査用三次元イメージング
JP7236473B2 (ja) 多重散乱信号に基づく埋設粒子深度値域分類
KR20220073766A (ko) 멀티 이미징 모드 이미지 정렬
TW202202938A (zh) 用於電子束計量及檢查之效能最佳化掃描序列
KR20260032899A (ko) Cmos 언더 어레이(cua) 구조가 존재하는 경우 cua 구조의 분류와 유효 매질 모델을 사용한 계측
US12235224B2 (en) Process window qualification modulation layouts
US20250147434A1 (en) Metrology in the Presence of CMOS Under Array (CUA) Structures Utilizing Model-Less Machine Learning
US20250123225A1 (en) Spectra delta metrology
TW202516560A (zh) 利用機器學習及物理模型建構之陣列下cmos(cua)結構存在中之計量

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant