KR102303175B1 - Vacuum evaporation apparatus - Google Patents

Abstract

A material supply device 3 for supplying a deposition material into the deposition container 1 for forming a thin film on the substrate K is provided from the material filling container 11 filled with the deposition material and the gas supply device 14 . A material guide pipe (12) for guiding the deposition material from the filling container (11) into the container (1) by the supplied inert gas, and a heater (17) for heating the guide pipe (12) to vaporize the deposition material; It is constituted by a vibration imparting device 13 that applies vibration to the container 11 .

Description

Vacuum evaporation system {VACUUM EVAPORATION APPARATUS}

The present invention relates to a vacuum vapor deposition apparatus for forming a thin film such as a metal material or an organic material on a vapor deposition target member such as a substrate.

In the case of forming a thin film on the surface of a substrate, a vacuum deposition apparatus is generally used. This vacuum vapor deposition apparatus puts the vapor deposition material in a container such as a crucible, heats it with a heat source disposed in the container, evaporates the material, and transfers the evaporated material to the deposition chamber. It is attached to the surface of the substrate disposed thereon. In addition, it is necessary to control the deposition rate on the surface of the substrate to be constant, and this control is based on the deposition rate obtained by a film thickness sensor that detects the thickness of the thin film formed on the surface of the substrate. It was made by controlling the heater provided in the crucible based on it (refer patent document 1, for example).

: Japanese Patent Laid-Open No. 2012-132049

According to the said conventional structure, the vapor deposition rate was made|formed by controlling the heat source arrange|positioned in the container. For example, when the deposition rate is low, the evaporation of the deposition material is promoted by raising the temperature of the heat source. There is a case where there is no case, and therefore, there was a case where it was unavoidable to lower the tact time. That is, there existed a problem that the influence by heating the vapor deposition material was large.

Therefore, an object of the present invention is to provide a vacuum vapor deposition apparatus capable of preventing adverse effects due to heating of vapor deposition materials.

In order to solve the above problems, the vacuum deposition apparatus according to the first invention provides a deposition container for forming a thin film by attaching a deposition material to a surface of a deposition target member in a vacuum state, and depositing with a deposition target member in the deposition container Provided with a material supply device for guiding the material,

the material supply device,

A material filling container in which the powder deposition material is filled, and

an inert gas supply means for supplying an inert gas into the material filling container;

material guiding means for guiding the deposition material to the deposition target member;

a deposition material control means for controlling a supply amount of the deposition material guided to the deposition target member;

Heating means for vaporizing the deposition material guided by the material guide means by heating the material guide means or the inside of the material guide means

is composed of

Further, in the vacuum deposition apparatus according to the second invention, as the vapor deposition material control means according to the first invention, a gas flow control valve provided in the inert gas supply means to control the supply amount of the inert gas is used.

Further, the vacuum deposition apparatus according to the third invention uses, as the deposition material control means of the first invention, a deposition amount control valve disposed in the middle of the material guide means and controlling the passage amount of the deposition material.

Further, in the vacuum deposition apparatus according to the fourth invention, in the vacuum deposition apparatus according to any one of the first to third inventions, vibration imparting means for imparting vibration to the material filling container is provided.

Further, in the vacuum vapor deposition apparatus according to the fifth invention, in the vacuum vapor deposition apparatus in any one of the first to third inventions, a stirring means provided with a stirring member for stirring the inside of the material filling container is provided.

Further, in the vacuum deposition apparatus according to the sixth invention, in the vacuum deposition apparatus according to any one of the first to third inventions, a cooling unit is disposed between the material guide means and the material filling container.

Further, in the vacuum deposition apparatus according to the seventh invention, in the vacuum deposition apparatus according to any one of the first to third inventions, the radiant heat from the heating unit provided in the material guide means between the material guide means and the material filling container is The material movement path changing member is disposed so as not to directly reach the surface of the deposition material in the deposition container.

According to the above configuration, an inert gas is supplied to the deposition material made of powder filled in the material filling container and guided to the material guide means, and a heating means is provided in the material guide means to vaporize the deposition material. As compared to controlling the deposition rate by heating the deposition material in the crucible as well as controlling the amount of heating in the crucible, there is no need to heat the deposition material in the crucible, that is, the material filling container, and thus the deposition material is deteriorated. no need to worry about In addition, since it is possible to increase the deposition rate by controlling the supply amount of the deposition material by the deposition material control means, there is no need to consider the limit temperature, unlike the case where the heating temperature of the deposition material is relied on as in the prior art, and thus the deposition rate can be broadly controlled. That is, the adverse effect due to heating of the vapor deposition material can be prevented.

Fig. 1 is a partially cutaway side view showing a schematic configuration of a vacuum deposition apparatus according to a first embodiment of the present invention.
Fig. 2 is a graph showing the relationship between the frequency and the vapor deposition rate in the vacuum vapor deposition apparatus of the first embodiment.
Fig. 3 is a graph showing the relationship between the supply amount of the inert gas and the deposition rate in the vacuum deposition apparatus of the first embodiment.
Fig. 4 is a cross-sectional view showing a schematic configuration of a vacuum vapor deposition apparatus according to a modification of the first embodiment.
Fig. 5 is a cross-sectional view showing the configuration of essential parts of a vacuum vapor deposition apparatus according to a modification of the first embodiment.
Fig. 6 is a cross-sectional view taken along arrow AA in Fig. 5;
Fig. 7 is a cross-sectional view showing a schematic configuration of a vacuum vapor deposition apparatus according to another modification of the first embodiment.
Fig. 8 is a partially cut-away side view showing a schematic configuration of a vacuum vapor deposition apparatus according to a second embodiment of the present invention.
Fig. 9 is a partially cut-away side view showing a schematic configuration of a vacuum vapor deposition apparatus according to a third embodiment of the present invention.
Fig. 10 is a graph showing the relationship between the frequency and the deposition rate in the vacuum deposition apparatus of Example 3;
Fig. 11 is a cross-sectional view showing a schematic configuration of a vacuum vapor deposition apparatus according to a modification of the third embodiment.
Fig. 12 is a cross-sectional view showing the configuration of essential parts of a vacuum vapor deposition apparatus according to a modification of the third embodiment.
Fig. 13 is a cross-sectional view taken along arrow BB in Fig. 12;
Fig. 14 is a cross-sectional view showing a schematic configuration of a vacuum vapor deposition apparatus according to another modification of the third embodiment.
Fig. 15 is a partially cut-away side view showing a schematic configuration of a vacuum vapor deposition apparatus according to a fourth embodiment of the present invention.

(Example 1)

Hereinafter, a vacuum deposition apparatus according to Example 1 of the present invention will be described based on the drawings.

In this vacuum vapor deposition apparatus, as shown in Fig. 1, a thin film-shaped substrate as a vapor-deposited member in a ^{predetermined vacuum state (for example, in a high vacuum state of 10 -5 Pa or less).} A vapor deposition chamber (also called a film formation chamber) for forming a thin film by attaching a vapor deposition material M to the surface (lower surface) of K (specifically, a film is used) ) (2) (also referred to as a film-forming vessel or vacuum chamber) (1) provided with (2), and vapor-deposited in this vapor deposition vessel (1), that is, in the vapor deposition chamber (2) A material feeding device (材料供給裝置) 3 for feeding (leading) the material M is provided.

First, the structure in the container 1 for vapor deposition is demonstrated briefly.

A support device 5 for a substrate K, which is a member to be deposited, is disposed on the upper portion of the deposition chamber 2 of the deposition container 1, and the substrate K is immediately adjacent to the support device 5. A film thickness sensor 6 for detecting the film thickness of the vapor deposition material M adhering to the surface of (K) is disposed. Moreover, below the support apparatus 5, the shutter member 7 for supplying and stopping the vapor deposition material M with respect to the board|substrate K is provided.

The support device 5 continuously guides the film, which is the substrate K, to a deposition area (a region within a predetermined range corresponding to a nozzle at the tip of a material guide pipe to be described later). A winding roll 5a for unwinding the substrate K, a winding roll 5b for winding the substrate K, and both of these rolls 5a and 5b are disposed between the substrate and a guide roll 5c for guiding the deposition surface of (K) to the deposition area. In addition, rolls for turning 5d for moving the substrate K along the surface of the guide roll 5c are disposed before and after the guide roll 5c (front and back in the moving direction of the substrate). .

In addition, the shutter member 7 is, for example, by a rotating shaft body 7b which is rotated around a vertical axis by a rotating machine 7a such as a motor, and a support device 5 . A shutter plate that swings in a plane parallel to the deposition surface of the supported substrate K (a horizontal plane including the lowermost straight portion of the guide roll 5c) and is attached to the upper end of the rotating shaft 7b.板) (7c). Due to the rotation of the rotating shaft 7b, the shutter plate 7c swings between a deposition stop position that covers the surface of the substrate K and a deposition permit position that opens the surface. And the measured value from the said film thickness sensor 6 is input to the vapor deposition rate control apparatus 8 which controls the gas flow control valve mentioned later.

Next, the material supply apparatus 3 which is the summary of this invention is demonstrated.

This material supply device 3 is arranged below the vapor deposition container 1 and is filled with a vapor deposition material M as a powder (for example, a powder having a particle size of 0.25 mm or less). A material filling container (材料充塡容器) (for example, a cylindrical container having the same bottom as the crucible is used) 11, this material filling container 11 and the vapor deposition container 1 ) and a material guide pipe 12 as a material guide means installed in the vertical direction over A vibration applying device (vibration imparting means) 13 for applying vibration to the An inert gas supply device (inert gas supply means) 14 for guiding (guiding) the vapor deposition material M subjected to vibration into the material guide pipe 12, that is, upwards; A gas flow control valve 15a installed in the middle of the piping of the inert gas supply device 14 (to be described later) and controlling the supply amount of the inert gas, that is, the gas flow rate, and this gas flow control valve 15a A gas supply amount control device 15 comprising a driving unit 15b for adjusting the opening degree of the a deposition amount control valve 16 capable of controlling It consists of a heater (heating means) 17 which vaporizes (sublimates or evaporates) the vapor deposition material M conveyed into the material guide pipe 12 by heating the lower guide pipe 12b below it. . Further, at least the lower guide tube 12b is sufficient for the heating location. Moreover, argon gas, helium gas, nitrogen gas, etc. are used as an inert gas. In addition, when the deposition material is not a fluorine compound, krypton, xenon, radon, etc. may be used.

Accordingly, the inert gas supply device 14 includes a gas supply pipe 21 connected to a gas supply port 11b formed at the lower end of the filling chamber 11a provided in the material filling container 11 at the tip end thereof; A gas supply amount control device 15 including a gas flow rate control valve 15a provided in the middle of the gas supply pipe 21, is connected to the proximal end of the gas supply pipe 21, and an inert gas (G) is supplied. It is composed of a gas-filled cylinder that can be supplied (22) and the like.

Although not specifically shown in the drawings, the vibration imparting device 13 includes, for example, a vibrating body installed in a casing to rotate through an eccentric shaft, and a vibrating body that rotates the eccentric shaft to vibrate the vibrating body. It consists of a motor. Vibration is given mainly in the vertical direction to the vapor deposition material M in the material filling container 11 by this vibration applicator 13 to make it float, and also vibrates in the horizontal direction to cause the deposition material M to float. released That is, floating of the vapor deposition material M is accelerated|stimulated by vibration.

In addition, the heater 17 includes a heating wire (eg, nichrome wire, etc.) wound around the material guide pipe 12 and a power supply (not shown in the drawing) for supplying electricity to the heating wire. is composed of

In addition, the upper end of the material guide tube 12, that is, the upper end of the upper guide tube 12a, is inserted into the bottom wall portion of the deposition container 1 and opened into the deposition chamber 2, The lower end is connected to the upper end opening of the material filling container 11 via a tubular connecting member 25 such as bellows. Moreover, at the upper end of the upper guide pipe 12a, a nozzle part 12c which discharges a vapor deposition material is provided.

The deposition amount control valve 16 is installed below the upper guide tube 12a, that is, between the upper guide tube 12a and the lower guide tube 12b. The heating wire of the heater 17 is wound around the deposition amount control valve 16 and its upper guide tube 12a and lower guide tube 12b.

The main function of the deposition amount control valve 16 is to open and close the flow path, and of course also has a flow rate control function. Therefore, the deposition amount control valve 16 is normally opened and closed by the main control unit of the vacuum deposition apparatus, and when the flow control function is used, the deposition rate control device 8 described above The opening degree from is also controlled according to the command. Here, the deposition amount is controlled by the gas flow control valve 15a.

In the above configuration, when a thin film of a predetermined material is formed on the surface (lower surface) of the film as the substrate K, the substrate K is supported by the support device 5 in the deposition chamber 2, that is, the substrate K. ) is guided over the lower surface of the guide roll 7c, and the inside of the vapor deposition chamber 2 is maintained at a predetermined degree of vacuum.

And on the filling material supply side, while filling the predetermined vapor deposition material (M) powder in the filling chamber (11a) of the material filling container (11), the gas filling cylinder (22) is also filled with an inert gas (G), The material guide pipe (12) is heated to a predetermined temperature by the heater (17). Also, the material guide pipe 12 is in a vacuum state as in the deposition chamber 2 .

In this state, the vibration imparting device 13 is operated to apply vibration to the material filling container 11 at a predetermined frequency and amplitude, for example, a frequency of 1 Hz to 30 Hz and an amplitude of 3 mm or less, and the gas flow control valve By opening 15a to a predetermined initial opening degree, an inert gas (eg, argon gas is used) G is supplied from the gas supply pipe 21 into the charging chamber 11a at a predetermined supply amount.

In this way, the vapor deposition material M in the filling chamber 11a is blown upward by the inert gas G supplied to the filling chamber 11a with vibration applied, and the inside of the material guide pipe 12 is moved upward. , and is heated and vaporized to a predetermined temperature (specifically, the vaporization temperature of the deposition material) by the deposition amount control valve 16 in an open state and the heater 17 disposed above it.

The vaporized deposition material M is moved from the nozzle portion 12c into the deposition chamber 2, so that it adheres to the surface of the substrate K and is deposited. That is, a thin film of the deposition material is formed on the surface of the substrate K. Of course, the substrate K is continuously formed by being wound on the winding roll 5b side at a predetermined speed along with the formation of the thin film, but in some cases, it is formed intermittently (by a so-called batch type) by a predetermined length. good though

In addition, with respect to the deposition amount on the substrate K, a film thickness value, which is a measured value from the film thickness sensor 6, is input to the deposition rate control device 8, where the deposition rate is obtained and a preset deposition rate is obtained. An opening degree command is output to the driving unit 15b to control the gas flow rate control valve 15a. That is, as described above, the gas flow control valve 15a functions as a deposition material control means.

Here, the vapor deposition material will be described.

That is, as the vapor deposition material M, inorganic materials and organic materials are used, and in particular, organic EL materials are used as well as saccharides and the like among organic materials.

In detail, examples of the inorganic material include metals such as copper and aluminum (all metals and alloys, and metal-containing compounds), semimetals (compounds including all semimetals and semimetals), and halogen substances (all metals and alloys). A halogen substance or a compound containing a halogen substance) is used, and in addition, a compound containing carbon (C) or selenium (Se), or a compound containing carbon (C), or a compound containing selenium (Se) is also used.

As the compound containing the metal, for example, gallium oxide (Ga ₂ O ₃ ), tungsten oxide (WO ₃ ), etc. are used, and as the semimetal, for example, boron (B), silicon (Si), germanium (Ge) , arsenic (As), antimony (Sb), tellurium (Te), polonium (Po), etc. are used, and as a compound containing the metalloid, for example, boron oxide (B ₂ O ₃ ), silicon oxide (SiO ₂ ) etc are used.

In addition, as materials for organic EL, there are those used for a hole injection layer, a hole transport layer, a light emitting layer, an electron injection layer, and an electron transport layer.

As a material for the hole injection layer and the hole transport layer, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine (N,N' -bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine)(TPD), N,N'-di(naphthalen-1-yl)-N, and N'-diphenylbenzidine (N,N'-di(naphthalen-1-yl)-N,N'-diphenylbenzidine) (α-NPD).

Examples of the material for the light emitting layer include arylamine derivatives, anthracene derivatives, coumarin derivatives, rubrene derivatives, and the like.

As a material for the electron injection layer and the electron transport layer, tris(8-quinolinolato)aluminum)(Alq ₃ ), 2-(4-biphenyl)-5-(4-tert- butylphenyl)-1,3,4-oxadiazole (2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole) (PBD) and the like.

When the relationship between the frequency and the deposition rate on the substrate surface is examined here, it can be seen that the deposition rate is proportional to the frequency as shown in FIG. Moreover, also with respect to supply_amount|feed_rate of an inert gas, when it increases, a vapor deposition rate becomes large, and when it decreases, a vapor deposition rate becomes small.

In Fig. 3, the relationship between the supply amount of the inert gas and the deposition rate is shown graphically. From this graph, it can be seen that the deposition rate is increasing in proportion to the supply amount of the inert gas. That is, it can be seen that the deposition rate can be controlled by the frequency and the supply amount of the inert gas. Of course, if the supply amount of the inert gas is controlled while the frequency is kept constant, the deposition rate can be easily controlled. Moreover, since it is possible to make the vapor deposition material even by keeping the frequency constant, it is possible to achieve stabilization of the deposition rate.

The fact that the deposition rate can be controlled by the amount of the inert gas supplied means that the deposition rate depends on the threshold temperature, whereas the deposition rate depends on the threshold temperature of the deposition material when the inert gas is not supplied as in the prior art. It means that it can be made larger than the deposition rate to be carried out.

According to the configuration of the vacuum deposition apparatus, the deposition material filled in the filling chamber 11a is guided to the material guide pipe 12 by supplying an inert gas to the material filling container 11, and the material guide pipe 12 ) in order to vaporize the deposition material by installing a heater 17, compared to controlling the deposition rate by heating the deposition material in the crucible and controlling the amount of heating in the crucible as in the prior art, the crucible, that is, material filling There is no need to heat the vapor deposition material in the container 11, and therefore there is no need to worry about deterioration of the vapor deposition material.

In addition, since it is possible to increase the deposition rate by increasing the supply amount of the inert gas, unlike the case where the heating temperature of the deposition material was relied on as in the prior art, it is not necessary to consider the limit temperature, and thus the deposition rate can be controlled widely. can That is, the adverse effect due to heating of the vapor deposition material can be prevented.

However, in the first embodiment, the material guide pipe 12 for heating is disposed (connected) directly above the tubular connecting member 25 (downstream in the moving direction of the vapor deposition material), but Figs. As shown in , a cooling mechanism 51 for reducing the temperature gradient region on the upstream side may be provided between them.

The cooling mechanism (51) is a short pipe portion disposed between the tubular connecting member (25) and the lower guide tube (12b) directly above it (downstream in the moving direction of the vapor deposition material) is heated. part 52, and a cooling part disposed over a part of the short pipe part 52 and the lower guide pipe 12b and provided with a predetermined annular gap d with respect to the inner surfaces thereof ( 53) is composed.

And this cooling part 53 is arranged on the inner surface of the tube, and the annular cooling chamber 55 is formed by a double tube structure, and the vertical boundary plate 56 is arranged at an arbitrary position, so that the annular cooling chamber ( 55), the horizontal cross section of the C-shaped tube body 54 for cooling, and the boundary plate of the annular cooling chamber 55 in the cooling tube body 54 56) at a position near one side of the cooling fluid supply pipe connected to the cooling pipe 54 and supplying a cooling fluid such as cooling water (so-called brine) F 57) and a cooling fluid discharge pipe ( 58) and a cooler 59 for circulating and supplying the cooling fluid through the cooling fluid supply pipe 57 and the cooling fluid discharge pipe 58.

In addition, in the annular cooling chamber 55, a plurality of baffle plates 60 for moving the cooling fluid F by bending it up and down are installed to protrude alternately from the top and bottom at a predetermined interval. have. In addition, an annular bottom plate 65 is provided at the bottom of the annular gap d to prevent the vapor deposition material and inert gas from entering from the upstream (downward) side.

By the way, the formation of the annular gap d is to prevent heat from being transferred from the lower guide tube 12b to the cooling unit 53, and the annular gap d is provided with a narrow gap with each other, A plurality of tubular thin stainless steel plates 66 (for example, 2 to 3, although the state in which only one sheet is arranged in Figs. overlapping), so that radiant heat from the lower guide tube 12b is reliably prevented from being transmitted to the cooling unit 53 .

Accordingly, the cooling fluid F supplied from the cooling fluid supply pipe 57 enters one end of the annular cooling chamber 55 , and moves up and down by the baffle plate 60 as well as in the annular cooling chamber 55 . It moves to the other end side, that is, it is discharged from the cooling fluid discharge pipe 58 while cooling its surroundings. The discharged cooling fluid F is supplied to the annular cooling chamber 55 through the cooling fluid supply pipe 57 again after being cooled by the cooler 59 .

In this way, since a part of the lower guide tube 12b and the short tube portion 52 are cooled by the cooling unit 53, the distance of the temperature gradient of the vapor deposition material can be shortened. In other words, by disposing a part of the cooling unit 53 in a high-temperature heating unit to shorten the distance of the temperature gradient of the vapor deposition material, it is possible to suppress liquefaction of the evaporated deposition material, that is, the evaporation material.

Further, in the cooling unit 53, the baffle plate 60 is disposed in the annular cooling chamber 55. However, the baffle plate may be omitted, and the tube inner surface (lower guide tube 12b) may be replaced with a double tube structure. A helical structure in which a cooling tube is spirally wound around a part and the inner surface of the short tube portion 52 may be used. In this case, a guide tube is provided in the inner passage of the spiral portion of the spirally wound cooling tube so that the vapor deposition material, inert gas, etc. can move smoothly, and the spiral portion of the cooling tube An annular gap (an annular gap as indicated by the symbol d in Fig. 5) is formed between the outer side and the inner surface of the tube to prevent heat transfer from the lower guide tube 12b. In addition, an annular bottom plate (annular bottom plate as indicated by reference numeral 65 in Fig. 5) is provided at the bottom of the annular gap to prevent vapor deposition materials, inert gas, and the like from entering the annular gap from below. In addition, as described with reference to Figs. 5 and 6, a plurality of thin stainless steel plates (stainless steel plates as indicated by reference numeral 66 in Figs. 5 and 6) having narrow gaps are disposed in the annular gap. Thus, the radiant heat from the lower guide tube 12b may be reliably prevented from being transmitted to the cooling unit 53 .

Further, in the first embodiment, the material guide pipe 12 for heating is connected in a straight line (in the vertical direction) directly above the tubular connecting member 25, but as shown in Fig. 7, this material guide pipe 12 ) of the lower guide tube 12b and the tubular connection member 25, the L-shaped tube (which may be inclined) when viewed from the side, which changes the movement path of the vapor deposition material moving upward. A material movement path changing pipe (which may also be referred to as a material movement path changing member) 61 made of an upper body may be disposed.

This material movement path changing pipe 61 is a horizontal first path changing pipe having one end connected to a lower guide pipe 12b having an L-shape (to be more precise, an inverted L-shape) when viewed from the side. It is comprised by the pipe part 61a, the other end of this 1st path changing pipe part 61a, and the vertical 2nd path changing pipe part 6lb connected to the tubular connecting member 25. As shown in FIG. Of course, the lower guide tube 12b and the second path change tube portion 6lb are positioned so as to be shifted from each other in the horizontal direction. Moreover, this material movement path change pipe 61 is made into a non-heating area|region.

As described above, between the lower guide tube 12b and the tubular connecting member 25, the L-shaped material movement path changing tube 61 is disposed in the side view, so that the deposition material in the material filling container 11 is , is prevented from being affected by radiant heat from the lower guide tube 12b, which is a heating region in which the heater 17 is installed. That is, melting on the surface of the vapor deposition material in the material filling container 11 is eliminated, so that the deposition rate can be stabilized and the flow rate of the inert gas can be reduced.

In the case where the material movement path changing pipe 61 is not provided, since the high-temperature heating section (lower guide pipe 12b), which is the heating area, is directly visible from the deposition material side, the surface of the deposition material is exposed by radiant heat from the high-temperature heating section. This is melted, and thus, in addition to the loss of the welding material, the flying of the material is suppressed, so that the deposition rate becomes unstable and the flow rate of the inert gas to be supplied increases.

Although the description regarding the coupling portion between the pipe members constituting the movement path of the vapor deposition material in the first embodiment is not specifically described, as shown in the drawing, a flange coupling is used (implementation shown below). The same applies to Example 2).

(Example 2)

Next, a vacuum vapor deposition apparatus according to a second embodiment of the present invention will be described with reference to the drawings.

In the above embodiment 1, the material filling container was described as vibrating by a vibrating device (vibrating means), but the vacuum vapor deposition apparatus of the second embodiment was designed to stir the material filling container instead of vibrating it. will be.

Since the vacuum vapor deposition apparatus according to the second embodiment and the part different from the first embodiment are parts of the material filling container, the second embodiment pays attention to this part and describes the same components as in the first embodiment. Numbers are given and detailed descriptions thereof are omitted.

Briefly, a stirring device (stirring means) capable of stirring the deposition material in the material filling container 11 is installed in the material movement path changing pipe 61 described in the first embodiment, and this stirring device is used here. It will be explained centered on Further, since the material filling container does not vibrate, the tubular connecting member 25 is not provided.

That is, as shown in Fig. 8, the stirring device 71 according to the second embodiment is an electric motor disposed on the other end side of the first horizontal path changing pipe section 61a having one end connected to the lower guide pipe 12b. (72) and the second path changing pipe portion (61b) disposed in the vertical direction and the upper end of the rotating shaft 74 connected to the electric motor 72, and a stirring blade attached to the lower end of the rotating shaft (a blade as an example of a stirring member) It is comprised by the stirring body 73 which consists of 75).

Therefore, by rotating the stirring body 73 by the electric motor 72 during deposition, the deposition material in the material filling container 11 can be moved to the material guide pipe 12 side, so that in the first embodiment described above The same effect as the vibration in the

That is, the deposition material made of powder in the material filling container 11 is stirred by the stirring body 73, and an inert gas is supplied to guide the material guide pipe 12 to the material guide pipe 12, and a heater ( 17) was installed to vaporize the deposition material, so compared to controlling the deposition rate by heating the deposition material in the crucible and controlling the amount of heating in the crucible as in the prior art, the crucible, that is, the material filling container 11 There is no need to heat the deposition material in the furnace, so there is no need to worry about deterioration of the deposition material.

And since it is possible to increase the deposition rate by controlling the supply amount of the inert gas, that is, by increasing the supply amount of the inert gas, there is no need to consider the limit temperature, unlike the case where it relied on the heating temperature of the deposition material as in the prior art. The deposition rate can be controlled over a wide range. That is, the adverse effect due to heating of the vapor deposition material can be prevented.

Although the stirring device 71 is provided in place of the vibration imparting device in the above description, the stirring device 71 and the vibration imparting device may be provided together. In this case, the tubular connecting member 25 is required.

In this case, since agitation is also performed together with vibration, when the vapor deposition material becomes agglomerate due to vibration, the agglomeration can be loosened.

Further, in Examples 1 and 2, the case where the substrate is a film has been described. For example, as shown by the imaginary lines in Figs. 1, 7 and 8, when the substrate K' is viewed in plan. A rectangular-shaped stainless steel or silicon plate material may be used. Of course, in this case, the deposition operation is performed in a batch type.

Further, in Examples 1 and 2, the material guide pipe and the material filling container were disposed outside the deposition container except for the tip, but the material guide pipe or the material guide pipe and the material filling container were increased if necessary. You may arrange|position inside the wearing container. In addition, although it has been described to deposit on the lower surface of the substrate arranged horizontally in the deposition container, for example, to deposit the substrate on the vertical surface of the substrate by placing the substrate vertically, or to deposit on the upper surface of the substrate arranged horizontally It can also be applied to one.

When the configuration in this case is applied to the configuration of the vacuum vapor deposition apparatus included in the configuration according to the first and second embodiments described above, it will be as follows.

That is, this vacuum deposition apparatus includes a deposition container for forming a thin film by attaching a deposition material to the surface of a deposition target member in a vacuum state, and a material supply device for delivering the deposition material to the deposition target member in the deposition container. do,

the material supply device,

A material filling container in which the powder deposition material is filled, and

an inert gas supply means for supplying an inert gas into the material filling container;

material guiding means for guiding the deposition material to the deposition target member;

a deposition material control means for controlling a supply amount of the deposition material guided to the deposition target member;

heating means for vaporizing the deposition material guided by the material guide means by heating the material guide means or the inside of the material guide means

is composed,

In addition, as the vapor deposition material control means, a gas flow control valve installed in the inert gas supply means to control the supply amount of the inert gas is used.

Examples 3 and 4 will also be described below.

In the vacuum vapor deposition apparatus shown in the above embodiments 1 and 2, the control of the evaporation amount of the deposition material was described as being based on vibration and the supply amount of the inert gas. It is designed to control the passage amount (evaporation amount) of the deposition material (evaporated deposition material).

Further, the configuration of the vacuum vapor deposition apparatus according to Examples 3 and 4 is substantially the same as that described in Examples 1 and 2 described above, but will be described again.

(Example 3)

Hereinafter, a vacuum deposition apparatus according to a third embodiment of the present invention will be described with reference to the drawings.

In this vacuum deposition apparatus, as shown in Fig. 9, a thin-film substrate (specifically, a film is used) as a vapor-deposited member in a ^{predetermined vacuum state (for example, a high vacuum state of 10 -5 Pa or less) (K)} A vapor deposition vessel (also referred to as a film forming vessel or a vacuum chamber) 101 having a vapor deposition chamber (also referred to as a film forming chamber) 102 for forming a thin film by attaching a vapor deposition material M to the surface (lower surface) of the , a material supply device 103 for supplying (leading) the vapor deposition material M to the vapor deposition vessel 101, that is, to the vapor deposition chamber 102 is provided.

First, the structure in the vapor deposition container 101 is demonstrated briefly.

A support device 105 for the substrate K, which is a member to be deposited, is disposed on the upper portion of the deposition chamber 102 of the deposition vessel 101, and the support device 105 is immediately adjacent to the support device 105 for the substrate K. The film thickness sensor 106 for detecting the film thickness of the vapor deposition material M adhering to the surface is arrange|positioned. Moreover, below the support device 105, the shutter member 107 for supplying and stopping the vapor deposition material M with respect to the board|substrate K is provided.

The support device 105 is for continuously guiding the film, which is the substrate K, to the deposition region (the region of a predetermined range corresponding to the nozzle portion at the tip of the material guide pipe, which will be described later). A winding roll 105a for winding the substrate K, a winding roll 105b for winding the substrate K, and a guide roll 105c disposed between the both rolls 105a and 105b to guide the deposition surface of the substrate K to the deposition area ) is composed of Moreover, the roll 105d for turning for moving the board|substrate K along the surface of the guide roll 105c is arrange|positioned before and behind the guide roll 105c (front and back in the moving direction of a board|substrate).

In addition, the shutter member 107 includes, for example, a rotating shaft body 107b that is rotated about a vertical axis by a rotating machine 107a such as a motor, and a deposition surface of the substrate K supported by the supporting device 105 . It is composed of a shutter plate 107c that swings in a plane parallel to (a horizontal plane including the lowermost straight portion of the guide roll 105c) and is attached to the upper end of this rotating shaft body 107b. Due to the rotation of the rotating shaft 107b, the shutter plate 107c swings between a deposition stop position that covers the surface of the substrate K and a deposition permission position that opens the surface. Then, the measured value from the film thickness sensor 106 is input to a deposition rate control device 108 that controls a deposition amount control valve, which will be described later.

Next, the material supply apparatus 103 which is the summary of this invention is demonstrated.

This material supply device 103 is disposed below the vapor deposition container 101 and is a material filling container (for example, a crucible) in which the vapor deposition material M of a powder (for example, a powder having a particle size of 0.25 mm or less) is filled. A cylindrical container having the same bottom is used) 111, and a material guide pipe 112 as a material guide means installed in the vertical direction over the material filling container 111 and the deposition container 101, and , a vibration imparting device (vibration imparting means) 113 attached to the bottom of the material filling container 111 and applying vibration to the deposition material M in the container 111, and the material filling container 111 Supplying an inert gas (G) to the lower part of the inside to guide (guide) the deposition material (M) to which the vibration is applied by the vibration applicator 113 into the material guide pipe 112, that is, upward. A device (inert gas supply means) 114 and a deposition amount control valve (also referred to as a deposition material control valve) disposed in the middle of the material guide pipe 112 and controlling the passage amount (deposition amount) of the deposition material M In the deposition amount control device (evaporation material control means) 115 comprising a 115a) and a driving unit 115b for adjusting the opening degree of the deposition amount control valve 115a, and in the material guide pipe 112 By heating the installation part of the deposition amount control valve 115a, the upper guide tube 112a above it, and the lower guide tube 112b below it, the deposition material M transferred into the material guide pipe 112 is vaporized ( It is composed of a heater (heating means) 116 for sublimation or evaporation). In addition, as for the heating location, at least the lower guide tube 112b is sufficient (heating the lower guide tube 112b controls the deposition rate by the deposition amount control valve 115a, Since it is necessary to vaporize M)). Moreover, argon gas, helium gas, nitrogen gas, etc. are used as an inert gas. Also, when the deposition material is not a fluorine compound, krypton, xenon, radon, etc. may be used.

Although not specifically shown in the drawing, the vibration imparting device 113 includes, for example, a vibrating body installed in a casing to rotate through an eccentric shaft, and a motor that rotates the eccentric shaft to vibrate the vibrating body. Vibration is mainly applied to the vapor deposition material M in the material filling container 111 by the vibration applicator 113 in the vertical direction to make it float, and also vibrates in the horizontal direction to release the vapor deposition material M. That is, floating of the vapor deposition material M is accelerated|stimulated by vibration.

Further, the heater 116 is composed of a heating wire (for example, nichrome wire) wound around the material guide pipe 112 and a power supply (not shown in the drawing) for supplying electricity to the heating wire.

In addition, the inert gas supply device 114 is connected to the gas supply port 111b formed in the lower part of the charging chamber 111a provided in the material filling container 111 at its tip end, and a gas flow control valve 122 is installed in the middle. It is composed of a gas supply pipe 121 and a gas filling cylinder 123 and the like connected to the base end of the gas supply pipe 121 and capable of supplying an inert gas (G).

In addition, the upper end of the material guide tube 112, that is, the upper end of the upper guide tube 112a is inserted into the bottom wall of the deposition vessel 101 to open in the deposition chamber 102, and the lower end is a tubular connecting member such as a bellows. It is connected to the upper opening of the material filling container 111 through 125 . Moreover, the nozzle part 112c which discharges the vapor deposition material is provided at the upper end of the upper guide pipe|tube 112a.

The deposition amount control valve 115a is installed below the upper guide tube 112a, that is, between the upper guide tube 112a and the lower guide tube 112b. In addition, the heating wire of the heater 116 is wound around the deposition amount control valve 115a and its upper guide tube 112a and lower guide tube 112b. The deposition amount control valve 115a is controlled based on the opening degree command from the deposition rate control device 108 described above.

In the above configuration, when a thin film of a predetermined material is formed on the surface (lower surface) of the film as the substrate K, the substrate K is supported by the support device 105 in the deposition chamber 102, that is, the substrate K. ) is guided over the lower surface of the guide roll 105c, and the inside of the deposition chamber 102 is maintained at a predetermined vacuum level.

And on the filling material supply side, while filling the predetermined deposition material (M) powder in the filling chamber 111a of the material filling container 111, the gas filling cylinder 123 is also filled with an inert gas (G), The material guide pipe 112 is heated to a predetermined temperature by the heater 116 . Also, the material guide pipe 112 is in a vacuum state as in the deposition chamber 102 .

In this state, the vibration applying device 113 is operated to apply vibration to the material filling container 111 at a predetermined frequency and amplitude, for example, at a frequency of 1 Hz to 30 Hz and an amplitude of 3 mm or less, and a gas flow control valve ( 122) is opened, and an inert gas (eg, argon gas is used) G is supplied from the gas supply pipe 121 into the charging chamber 111a at a predetermined supply amount.

In this way, the vapor deposition material M in the filling chamber 111a is blown upward by the inert gas G supplied to the filling chamber 111a with vibration applied, and the inside of the material guide pipe 112 is moved upward. and is heated to a predetermined temperature (specifically, the vaporization temperature of the deposition material) by the deposition amount control valve 115a and the heater 116 disposed above it to vaporize.

The vaporized deposition material M moves from the nozzle unit 112c into the deposition chamber 102 and adheres to the surface of the substrate K to be deposited. That is, a thin film of the deposition material is formed on the surface of the substrate K. Of course, the substrate K is continuously formed by being wound on the winding roll 105b side at a predetermined speed along with the formation of the thin film.

In addition, with respect to the deposition amount on the substrate K, a film thickness value, which is a measured value from the film thickness sensor 106, is input to the deposition rate control device 108, from which the deposition rate is obtained and preset deposition An opening degree command is output to the driving unit 115b to control the deposition amount control valve 115a.

Here, the vapor deposition material will be described.

That is, as the vapor deposition material M, inorganic materials and organic materials are used, and among organic materials, materials for organic EL are used in addition to sugars and the like.

In detail, as the inorganic material, metals such as copper and aluminum (all metals and alloys, and metal-containing compounds), semimetals (all semimetals and semi-metals-containing compounds), halogen substances (all halogen substances, halogen substances) compound containing ), and other compounds containing carbon (C) or selenium (Se), or carbon (C), or compounds containing selenium (Se) are also used.

As the compound containing the metal, for example, gallium oxide (Ga ₂ O ₃ ), tungsten oxide (WO ₃ ), etc. are used, and as the semimetal, for example, boron (B), silicon (Si), germanium (Ge) , arsenic (As), antimony (Sb), tellurium (Te), polonium (Po), etc. are used, and as a compound containing the metalloid, for example, boron oxide (B ₂ O ₃ ), silicon oxide (SiO ₂ ) etc are used.

In addition, as materials for organic EL, there are those used for a hole injection layer, a hole transport layer, a light emitting layer, an electron injection layer, and an electron transport layer.

Materials for the hole injection layer and the hole transport layer include N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine (TPD), N ,N'-di(naphthalen-1-yl)-N,N'-diphenylbenzidine (α-NPD) and the like.

Examples of the material for the light emitting layer include arylamine derivatives, anthracene derivatives, coumarin derivatives, and rubrene derivatives.

As a material for the electron injection layer and the electron transport layer, tris(8-quinolinolato)aluminum (Alq ₃ ), 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4 -Oxadiazole (PBD), etc.

When the relationship between the frequency and the deposition rate on the substrate surface is examined here, it can be seen that the deposition rate is proportional to the frequency as shown in FIG. That is, it can be seen that the deposition rate can be controlled even when the frequency is controlled. Moreover, since it is possible to make the vapor deposition material even by keeping the frequency constant, it is possible to achieve stabilization of the deposition rate.

According to the configuration of the vacuum deposition apparatus, by supplying an inert gas to the material filling container 111, the deposition material filled in the filling chamber 111a is guided to the material guide pipe 112, and the material guide pipe 112 ) to vaporize the deposition material by installing a heater 116 in it, compared to controlling the deposition rate by heating the deposition material in the crucible as in the prior art and controlling the amount of heating in the crucible, the crucible, that is, material filling There is no need to heat the vapor deposition material in the container 111, and therefore there is no need to worry about deterioration of the deposition material.

Further, in the third embodiment, the material guide pipe 112 for heating is disposed (connected) just above the tubular connecting member 125 (downstream in the moving direction of the vapor deposition material). As shown, a cooling mechanism 151 for reducing the temperature gradient region on the upstream side may be provided between them.

The cooling mechanism 151 is a short pipe portion 152 disposed between the tubular connecting member 125 and the lower guide pipe 112b directly above it (downstream side in the moving direction of the vapor deposition material). and a cooling unit 153 disposed over a part of the short tube portion 152 and the lower guide tube 112b and provided with a predetermined annular gap d with respect to the inner surface thereof.

And the cooling unit 153 is disposed on the inner surface of the tube, and an annular cooling chamber 155 is formed by a double tube structure, and the vertical boundary plate 156 is disposed at an arbitrary position, so that the annular cooling chamber ( At a position near one side of the boundary plate 156 of the annular cooling chamber 155 of the cooling tube body 154 having a horizontal cross section of 155 having a C-shape, and the cooling tube 154 of the cooling tube body 154 . A position near the other side of the boundary plate 156 of the cooling fluid supply pipe 157 connected to the tube body 154 and supplying a cooling fluid (so-called brine) F such as cooling water, and the annular cooling chamber 155 . The cooling fluid discharge pipe 158 connected to the cooling pipe 154 and discharging the cooling fluid F, and the cooling fluid supply pipe 157 and the cooling fluid discharge pipe 158 are circulated to supply the cooling fluid Consists of a cooler 159 for

In addition, in the annular cooling chamber 155 , a plurality of baffle plates 160 for moving the cooling fluid F by bending it up and down are provided so as to protrude alternately from the top and bottom at a predetermined interval. In addition, an annular bottom plate 165 is provided at the bottom of the annular gap d to prevent the vapor deposition material and inert gas from entering from the upstream side (downward).

However, the formation of the annular gap d is to prevent heat from being transferred from the lower guide tube 112b to the cooling unit 153, and the annular gap d has a narrow gap with each other, A plurality of tubular thin stainless steel plates (in Fig. 12 and Fig. 13, only one sheet is shown with imaginary lines, but actually arranged in multiple sheets) 166 are arranged (for example, about 2 to 3 layers). Thus, the radiant heat from the lower guide tube 112b is reliably prevented from being transmitted to the cooling unit 153 .

Accordingly, the cooling fluid F supplied from the cooling fluid supply pipe 157 enters one end of the annular cooling chamber 155 , and moves up and down by the baffle plate 160 as well as in the annular cooling chamber 155 . It moves to the other end side, that is, it is discharged from the cooling fluid discharge pipe 158 while cooling its surroundings. The discharged cooling fluid F is supplied to the annular cooling chamber 155 through the cooling fluid supply pipe 157 after being cooled in the cooler 159 .

In this way, since a part of the lower guide tube 112b and the short tube portion 152 are cooled by the cooling unit 153, the distance of the temperature gradient of the deposition material can be shortened. In other words, by arranging a part of the cooling unit in the high-temperature heating unit to make the distance of the temperature gradient of the vapor deposition material shorter, liquefaction of the vapor deposition material, that is, the evaporation material, can be suppressed.

Further, in the cooling unit 153, the baffle plate 160 is disposed in the annular cooling chamber 155. However, the baffle plate may be omitted, and the tube inner surface (lower guide tube 112b) may be replaced with a double tube structure. A helical structure in which a cooling tube is spirally wound around a part and the inner surface of the short tube portion 152 may be used. In this case, in the spirally wound cooling tube, a guide tube is provided in the inner passage of the spiral portion so that deposition materials, inert gas, etc. can move smoothly, and the outer side of the spiral portion in the cooling tube and the inner surface of the tube are provided. An annular gap (annular gap as indicated by the symbol d in Fig. 12) is formed therebetween, preventing heat transfer from the lower guide tube 112b. In addition, an annular bottom plate (annular bottom plate as indicated by reference numeral 165 in Fig. 12) is provided at the bottom of the annular gap to prevent vapor deposition materials, inert gas, and the like from entering the annular gap from below. In addition, as described with reference to FIGS. 12 and 13, a plurality of thin stainless steel plates (stainless steel plates as indicated by reference numeral 166 in FIGS. 12 and 13) are arranged in the annular gap with a narrow gap with each other. Thus, the radiant heat from the lower guide tube 112b may be reliably prevented from being transmitted to the cooling unit 153 .

Further, in the third embodiment, the material guide pipe 112 for heating is connected in a straight line (in the vertical direction) directly above the tubular connecting member 125, but as shown in Fig. 14, this material guide pipe 112 ) arranged between the lower guide tube 112b and the tubular connection member 125 and made of an L-shaped (or inclined) tubular body when viewed from the side to change the movement path of the vapor deposition material moving upward A material movement path changing pipe (which may also be referred to as a material movement path changing member) 161 may be disposed.

The material movement path changing pipe 161 has a horizontal first path changing pipe part 161a connected at one end to a lower guide pipe 112b having an L-shape (to be more precise, an inverted L-shape) when viewed from the side. , the other end of the first path changing pipe portion 161a and a second vertical path changing pipe portion 16lb connected to the tubular connecting member 125 . Of course, the lower guide tube 112b and the second route change tube portion 16lb are installed so as to be offset from each other in the horizontal direction. Moreover, this material movement path change pipe 161 is made into a non-heating area|region.

As described above, between the lower guide tube 112b and the tubular connecting member 125, the L-shaped material movement path changing tube 161 when viewed from the side is disposed, so that the deposition material in the material filling container 111 is , is prevented from being affected by radiant heat from the lower guide tube 112b, which is a heating region in which the heater 116 is installed. That is, melting on the surface of the deposition material in the material filling container 111 is eliminated, so that the deposition rate can be stabilized and the flow rate of the inert gas can be reduced.

In addition, when the material movement path changing pipe 161 is not provided, the high-temperature heating section (lower guide pipe 112b), which is the heating region, is directly visible from the deposition material side, so that the deposition material is heated by radiant heat from the high-temperature heating section. The surface is melted, and thus, in addition to the loss of the welding material, the flying of the material is suppressed, thereby destabilizing the deposition rate and increasing the flow rate of the supplied inert gas.

Although the description of the coupling portion between the pipe members constituting the movement path of the vapor deposition material in the third embodiment is not particularly made, as shown in the drawings, a flange coupling is used (also in the fourth embodiment shown below). be the same).

(Example 4)

Next, a vacuum vapor deposition apparatus according to a fourth embodiment of the present invention will be described with reference to the drawings.

In the above embodiment 3, the material filling container is described as vibrating by means of a vibrating device (vibrating means), but the vacuum vapor deposition apparatus of this embodiment 4 is designed to stir the material filling container instead of vibrating it.

Since the vacuum vapor deposition apparatus according to the fourth embodiment and the part different from the third embodiment are parts of the material filling container, the fourth embodiment pays attention to this part and describes the same components as in the third embodiment. Numbers are attached and detailed descriptions thereof are omitted.

Briefly, a stirring device (agitating means) capable of stirring the deposition material in the material filling container 111 is installed in the material movement path changing pipe 161 described in the third embodiment, and this stirring device is It will be explained centered on Further, since the material filling container does not vibrate, the tubular connecting member 125 is not provided.

That is, as shown in Fig. 15, the stirring device 171 according to the fourth embodiment has an electric motor 172 disposed on the other end side of the first horizontal path changing pipe section 161a connected at one end to the lower guide pipe 112b. And, the second path changing pipe portion (16lb) disposed in the vertical direction and the upper end of the rotating shaft 174 connected to the electric motor 172 and the stirring blade attached to the lower end of the rotating shaft (an example of a stirring member, limited to the blade) It is composed of a stirring body 173 made of 175).

Therefore, by rotating the stirring body 173 by the electric motor 172 at the time of deposition, the deposition material in the material filling container 111 can be moved to the material guide pipe 112 side, and thus, in the above-described embodiment 3 The same action and effect as the vibration in the

That is, the deposition material made of powder in the material filling container 111 is stirred by the stirring body 173, and an inert gas is supplied to guide the material guide pipe 112 to the material guide pipe 112, and a heater ( 116) was installed to vaporize the deposition material, so compared to controlling the deposition rate by heating the deposition material in the crucible and controlling the amount of heating in the crucible as in the prior art, the crucible, that is, the material filling container 111 There is no need to heat the deposition material in the furnace, so there is no need to worry about the deterioration of the deposition material.

Although the stirring device 171 is provided in place of the vibration imparting device in the above description, the stirring device 171 and the vibration imparting device may be installed together. In this case, the tubular connection member 125 is required.

In this case, since agitation is also performed along with vibration, when the vapor deposition material becomes agglomerate due to vibration, the mass can be loosened.

Also in the fourth embodiment, the same configuration as the modified examples of Figs. 11 to 13 described in the third embodiment can be applied.

That is, the cooling mechanism can be applied to the lower guide pipe (112b) of the material guide pipe (112). Specifically, the vertical portion of the L-shaped lower guide tube 112b when viewed from the heating side becomes longer, and the upper portion of the lower guide tube 112b serves as a heating portion, and the lower guide tube 112b ) becomes a single pipe section, and a cooling section is provided that spans the short pipe section and the upper section of the lower guide pipe 112b and is arranged with a predetermined annular gap with respect to the inner surfaces thereof. In addition, the configuration of the cooling unit is the same as that described with reference to Figs.

Further, in each of the above embodiments, the case where the substrate is a film has been described. For example, as shown by the phantom lines in Figs. 9, 14 and 15, the substrate K' is a stainless steel that has a rectangular shape when viewed in a plan view. It may be a plate material made of a product made from a silicon material. Of course, in this case, the deposition operation is performed in a batch type.

In addition, in Examples 3 and 4, the material guide pipe and the material filling container except for the tip part were disposed outside the deposition container. You may arrange|position inside a container. In addition, although it has been described to deposit on the lower surface of the substrate horizontally arranged in the deposition container, for example, the substrate is arranged vertically and deposited on the vertical surface of the substrate or deposited on the upper surface of the horizontally arranged substrate. can also be applied to

The configuration in this case will be described by applying the configuration of the vacuum vapor deposition apparatus including the configurations according to the third and fourth embodiments described above.

That is, this vacuum deposition apparatus includes a deposition container for forming a thin film by attaching a deposition material to the surface of a deposition target member in a vacuum state, and a material supply device for delivering the deposition material to the deposition target member in the deposition container. do,

the material supply device,

A material filling container in which the powder deposition material is filled, and

an inert gas supply means for supplying an inert gas into the material filling container;

material guiding means for guiding the deposition material to the deposition target member;

a deposition material control means for controlling a supply amount of the deposition material guided to the deposition target member;

heating means for vaporizing the deposition material guided by the material guide means by heating the material guide means or the inside of the material guide means

is composed,

Further, as the vapor deposition material control means, a deposition amount control valve disposed in the middle of the material guide means to control the passage amount of the deposition material is used.

However, in Examples 1 and 2, it is explained that the supply amount of the inert gas is controlled by the deposition rate control device. Although it has been described that the amount of material passing through is controlled by the deposition rate control device, the supply amount of the inert gas and the amount of passing of the deposition material may be controlled by the deposition rate control device in some cases. That is, the gas flow control valve and the deposition amount control valve may be controlled by the deposition rate control device.

G: inert gas
K: substrate
K': substrate
M: vapor deposition material
1: Container for deposition
2: deposition chamber
3: material supply device
8: deposition rate control device
11: material filling container
11a: charging chamber
12: material guide pipe
12a: upper guide tube
12b: lower guide tube
13: vibration imparting device
14: inert gas supply device
15: gas supply amount control device
15a: gas flow control valve
16: deposition amount control valve
17: heater
21: gas supply pipe
25: tubular connection member
51: cooling mechanism
52: single pipe part
53: cooling unit
61: material movement path change pipe
61a: 1st route change department
6lb: 2nd route change pipe part
71; agitator
72: electric motor
73: stirring body
74: rotation shaft
75 ; stirring blade
101: container for deposition
102: deposition chamber
103: material supply device
108: deposition rate control device
111: material filling container
111a: charging chamber
112: material guide pipe
112a: upper guide tube
112b: lower guide tube
113: vibration imparting device
114: inert gas supply device
115: deposition material control device
115a: deposition amount control valve
115b: drive unit
116: heater
121: gas supply pipe
125: tubular connection member
151: cooling mechanism
152: single pipe part
153: cooling unit
161: material movement path change hall
161a: 1st route change department
16lb: 2nd route change pipe part
171: stirring device
172: electric motor
173: stirring body
174: rotation axis
175: stirring blade

Claims (7)

A deposition container for forming a thin film by attaching the deposition material to the surface of the deposition target member in a vacuum state, and delivering the deposition material to the deposition target member in the deposition container equipped with a material supply device that
the material supply device,
A material filling container in which the deposition material, which is a powder, is filled, and
an inert gas supply means for supplying an inert gas into the material filling container;
a material guide means for guiding the deposition material to the deposition target member;
a deposition material control means for controlling the supply amount of the deposition material guided to the deposition target member;
heating means for vaporizing the deposition material guided by the material guide means by heating the material guide means or the inside of the material guide means
Doing configuration,
Installing a vibration imparting means for imparting vibration to the material filling container,
A vacuum deposition apparatus characterized in that an inert gas is supplied from a lower part of the vibrating material filling container.
According to claim 1,
A vacuum deposition apparatus according to claim 1, wherein a gas flow control valve provided in the inert gas supply means to control the supply amount of the inert gas is used as the deposition material control means.
According to claim 1,
A vacuum deposition apparatus according to claim 1, wherein a deposition amount control valve disposed in the middle of the material guide means for controlling the passage amount of the deposition material is used as the deposition material control means.
delete 4. The method according to any one of claims 1 to 3,
A vacuum deposition apparatus, characterized in that a stirring means (攪拌手段) provided with a stirring member for stirring the inside of the material filling container (攪拌手段) is provided.
4. The method according to any one of claims 1 to 3,
A vacuum deposition apparatus, characterized in that a cooling unit is disposed between the material guide means and the material filling container.
4. The method according to any one of claims 1 to 3,
Between the material guide means and the material filling container, a material movement path changing member is provided so that radiant heat from the heating unit provided in the material guide means does not directly reach the surface of the deposition material in the material filling container. A vacuum deposition apparatus, characterized in that for arranging the part.

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