KR102295527B1 - 컨택 점퍼를 포함하는 집적 회로 - Google Patents
컨택 점퍼를 포함하는 집적 회로 Download PDFInfo
- Publication number
- KR102295527B1 KR102295527B1 KR1020170081831A KR20170081831A KR102295527B1 KR 102295527 B1 KR102295527 B1 KR 102295527B1 KR 1020170081831 A KR1020170081831 A KR 1020170081831A KR 20170081831 A KR20170081831 A KR 20170081831A KR 102295527 B1 KR102295527 B1 KR 102295527B1
- Authority
- KR
- South Korea
- Prior art keywords
- gate line
- conductive pattern
- integrated circuit
- contact
- disposed
- Prior art date
Links
- 239000002184 metal Substances 0.000 claims description 126
- 229910052751 metal Inorganic materials 0.000 claims description 126
- 238000000034 method Methods 0.000 claims description 25
- 229910021332 silicide Inorganic materials 0.000 claims description 21
- 239000010410 layer Substances 0.000 description 61
- 239000004065 semiconductor Substances 0.000 description 24
- 238000003860 storage Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 10
- 238000013461 design Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 101100439295 Citrus limon ClPT1 gene Proteins 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 101100182721 Mus musculus Ly6e gene Proteins 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000010200 validation analysis Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Theoretical Computer Science (AREA)
- Semiconductor Integrated Circuits (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/865,941 US10319668B2 (en) | 2017-02-08 | 2018-01-09 | Integrated circuit having contact jumper |
CN201810131037.6A CN108400129B (zh) | 2017-02-08 | 2018-02-08 | 具有接触跨接线的集成电路 |
CN202310100341.5A CN115954340A (zh) | 2017-02-08 | 2018-02-08 | 具有接触跨接线的集成电路 |
CN202310112065.4A CN115954341A (zh) | 2017-02-08 | 2018-02-08 | 具有接触跨接线的集成电路 |
TW107104513A TWI745544B (zh) | 2017-02-08 | 2018-02-08 | 具有接觸窗跳線件的積體電路及半導體裝置 |
US16/394,961 US10832988B2 (en) | 2017-02-08 | 2019-04-25 | Integrated circuit having contact jumper |
US17/075,141 US11626348B2 (en) | 2017-02-08 | 2020-10-20 | Integrated circuit having contact jumper |
US18/119,560 US11887914B2 (en) | 2017-02-08 | 2023-03-09 | Integrated circuit having contact jumper |
US18/123,296 US20230223319A1 (en) | 2017-02-08 | 2023-03-19 | Integrated circuit having contact jumper |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20170017676 | 2017-02-08 | ||
KR1020170017676 | 2017-02-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20180092253A KR20180092253A (ko) | 2018-08-17 |
KR102295527B1 true KR102295527B1 (ko) | 2021-08-31 |
Family
ID=63408308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020170081831A KR102295527B1 (ko) | 2017-02-08 | 2017-06-28 | 컨택 점퍼를 포함하는 집적 회로 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR102295527B1 (zh) |
TW (1) | TWI745544B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI846829B (zh) * | 2019-02-28 | 2024-07-01 | 日商東京威力科創股份有限公司 | 半導體裝置用之雙金屬包繞式接觸窗 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150008524A1 (en) | 2013-07-02 | 2015-01-08 | United Microelectronics Corp. | Integrated circuit device structure and fabrication method thereof |
US20160300839A1 (en) | 2015-04-08 | 2016-10-13 | Ha-young Kim | Integrated circuit and semiconductor device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW569415B (en) * | 2002-12-11 | 2004-01-01 | Taiwan Semiconductor Mfg | Routing layout of multi-layer metal lines |
KR101958421B1 (ko) * | 2014-07-22 | 2019-03-14 | 삼성전자 주식회사 | 집적 회로, 상기 집적 회로에 따른 반도체 소자 및 표준 셀 라이브러리 |
KR102288869B1 (ko) * | 2014-10-01 | 2021-08-10 | 삼성전자주식회사 | 시스템 온 칩 |
KR102368618B1 (ko) * | 2015-02-26 | 2022-03-02 | 삼성전자주식회사 | 시스템 온 칩 및 이의 레이아웃 설계 방법 |
-
2017
- 2017-06-28 KR KR1020170081831A patent/KR102295527B1/ko active IP Right Grant
-
2018
- 2018-02-08 TW TW107104513A patent/TWI745544B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150008524A1 (en) | 2013-07-02 | 2015-01-08 | United Microelectronics Corp. | Integrated circuit device structure and fabrication method thereof |
US20160300839A1 (en) | 2015-04-08 | 2016-10-13 | Ha-young Kim | Integrated circuit and semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
KR20180092253A (ko) | 2018-08-17 |
TW201841339A (zh) | 2018-11-16 |
TWI745544B (zh) | 2021-11-11 |
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