KR102282519B1 - Adhesive tape for semicondoctor package manufacturing process and method for manufacturing the same - Google Patents

Abstract

The present technology can protect the lower surface of the semiconductor package and the plurality of protruding electrodes formed on the lower surface of the semiconductor package during a semiconductor package manufacturing process having a plurality of protruding electrodes, and can be easily removed from the semiconductor package without any residue after completing a predetermined manufacturing process. In order to provide a detachable adhesive tape for a semiconductor package manufacturing process, the adhesive tape for a semiconductor package manufacturing process attached to a lower surface of a semiconductor package having a plurality of protruding electrodes formed on the first base film adhesive layer; a second base film formed on the first adhesive layer, the shape of which is deformed to correspond to the topology of the bottom surface of the semiconductor package when the bottom surface of the semiconductor package is attached, and containing metal elements to independently maintain the deformed shape between processes; and a second adhesive layer formed on the second base film, having a thinner thickness than the first adhesive layer, and having an adhesive force smaller than that of the first adhesive layer, wherein each of the first adhesive layer and the second adhesive layer is An adhesive tape having a molecular structure having a helical network structure and including a first adhesive composition containing silicone is provided.

Description

Adhesive tape for semiconductor package manufacturing process and manufacturing method thereof

The present invention relates to an adhesive tape for a semiconductor package manufacturing process, and more particularly, protects the lower surface of the semiconductor package and the plurality of protruding electrodes formed on the lower surface of the semiconductor package during the EMI (Electro Magnetic Interference) shielding layer forming process of the semiconductor package. It relates to an adhesive tape for a semiconductor package manufacturing process and a manufacturing method thereof.

As a type of semiconductor package, a Ball Grid Array (BGA) is widely used. BGA achieves external terminal contact of the semiconductor package by means of a solder ball. Instead of transmitting signals to one side, both sides, and four sides in a lead frame type package, it is replaced with numerous protruding electrodes exposed on the bottom, that is, solder balls. It allowed for more signal transduction. These BGA packages are produced as the main package of next-generation high-speed memory, and the field of use of CSP (Chip Scale Package), which was limited to portable information and communication devices such as mobile phones and digital cameras, has been expanded to the computer area such as PCs and workstations. there is.

On the other hand, in order to simultaneously achieve both the demand to increase the size of the battery in order to increase the battery life in the mobile field and the need to reduce the size of the terminal at the same time, there is a need to relatively reduce the size of the PCB occupied by the terminal. , when the size of the PCB is reduced, the gap between the semiconductor devices included in the PCB is narrowed, and errors due to electromagnetic interference between the semiconductor devices inevitably occur. In order to suppress the electromagnetic interference between devices, a method of covering a device shielding cap (CAP) or a technique of forming a shielding metal coating on the outer surface of the device by EMI sputtering technology has been developed and introduced.

Among them, the metal coating technology for shielding by sputtering refers to forming a metal thin film for shielding electromagnetic waves on the entire outer surface except for the connection terminals of the semiconductor device through a sputtering process. In the case of a BGA semiconductor package, as a method not to affect the connection terminals during the sputtering process for electromagnetic wave shielding, the method of applying sputtering by accommodating the semiconductor package in a tape having a hole the size of the semiconductor package and exposing only the upper surface of the package ( Although refer to Patent Registration No. 10-1662068) has been proposed, not only does it cost excessively to form a hole in the tape, but also the problem that a thin film by sputtering is poorly deposited when the semiconductor package is not accurately placed in the hole there is

Republic of Korea Patent Publication No. 10-1662068 (2016.10.04)

Accordingly, the present invention is intended to solve the problems of the related art, for a semiconductor package manufacturing process capable of protecting a lower surface of a semiconductor package and a plurality of protruding electrodes formed on the lower surface of the semiconductor package during a semiconductor package manufacturing process having a plurality of protruding electrodes An object of the present invention is to provide an adhesive tape and a method for manufacturing the same.

Another object of the present invention is to provide an adhesive tape for a semiconductor package manufacturing process that can be easily separated from a semiconductor package without any residue after completing a predetermined manufacturing process, and a manufacturing method thereof.

The problems to be solved of the present invention are not limited to those mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

According to one aspect of the present invention for achieving the objects of the present invention, in the adhesive tape for a semiconductor package manufacturing process attached to the lower surface of the semiconductor package having a plurality of protruding electrodes formed, the first formed on the first base film adhesive layer; a second base film formed on the first adhesive layer, the shape of which is deformed to correspond to the topology of the bottom surface of the semiconductor package when the bottom surface of the semiconductor package is attached, and containing metal elements to independently maintain the deformed shape between processes; and a second adhesive layer formed on the second base film, having a thinner thickness than the first adhesive layer, and having an adhesive force smaller than that of the first adhesive layer, wherein each of the first adhesive layer and the second adhesive layer is An adhesive tape having a molecular structure having a helical network structure and including a first adhesive composition containing silicone is provided.

In the present invention, it is attached on the second adhesive layer, may further include a fluorine-containing release film, the release film may have an adhesive strength in the range of 3 gf / 25mm to 8 gf / 25mm.

In the present invention, the first intermediate layer inserted between the first base film and the first adhesive layer; and a second intermediate layer inserted between the second base film and the second adhesive layer, wherein each of the first intermediate layer and the second intermediate layer has a helical network structure, and contains silicon 2 It includes an adhesive composition, and may have a basis weight in the range of ^{0.2 g/m 2} to 0.5 g/m ^{2 .} The second adhesive composition is toluene, siloxane and silicone, di-methyl, hydroxy-terminated (Siloxanes and Silicones, di-Me, hydroxy-terminated; CAS No. 70131-67-8), xylene ( Xylene), trimethylated silica, and ethylbenzene may be mixed.

In the present invention, the first base film has a single layer or a multilayer structure in which two or more selected from the group consisting of polyethylene terephthalate (PET), polyimide (PI) and polyolefin (PO), 10 It may have a thickness in the range of μm to 150 μm. In the first base film, a surface in contact with the first adhesive layer may be surface-treated using a corona discharge treatment method or an ion-assisted reaction method.

In the present invention, the first base film is deformed to correspond to the topology of the lower surface of the semiconductor package when the lower surface of the semiconductor package is attached, and may contain a metal element to independently maintain the deformed form between processes. there is. Each of the first base film and the second base film contains at least 99 wt% of aluminum (Al), and each of the first base film and the second base film containing aluminum is 6 kgf/mm ² to 12 kgf It has ^{a tensile strength in the range of /mm 2} and an elongation in the range of 8% to 16%, and may have a thickness in the range of 10 μm to 35 μm. In addition, each of the first base film and the second base film comprises at least 99 wt% of copper (Cu), and each of the first base film and the second base film containing copper is 10 kgf/mm ² to It has a tensile strength in the range of 26 kgf/mm ² and an elongation in the range of 4% to 12%, and may have a thickness in the range of 10 μm to 35 μm.

In the present invention, the second base film has a thickness in the range of 10 μm to 35 μm, and as the size of the protruding electrode increases, the thickness of the second base film decreases within a set thickness range, and between the protruding electrodes As the interval between , the thickness of the second base film may increase within a set thickness range.

In the present invention, the second base film is regularly arranged in the film, and includes a plurality of perforations penetrating the second base film, each of the plurality of perforations is selected from the group consisting of a triangle or more polygons, ovals or circles. It has a single planar shape, and the first adhesive layer and the second adhesive layer may be in direct contact through the plurality of perforations.

In the present invention, the first adhesive layer may have a thickness in the range of 100 μm to 700 μm and an adhesive strength of at least 500 gf/25 mm, and the second adhesive layer has a thickness in the range of 10 μm to 50 μm and 200 gf/25 mm to It may have an adhesion in the range of 300 gf/25mm.

In the present invention, the first adhesive layer has a thickness in the range of 100 μm to 700 μm, and as the size of the protruding electrode increases, the thickness of the first adhesive layer decreases within a set thickness range, and the gap between the protruding electrodes As this increases, the thickness of the first adhesive layer increases within a set thickness range, and the second adhesive layer has a thickness in a range of 10 μm to 50 μm, and as the size of the protruding electrode increases, the second adhesive layer increases within a set thickness range. As the thickness of the adhesive layer increases and the distance between the protruding electrodes increases, the thickness of the second adhesive layer may decrease within a set thickness range.

In the present invention, the first adhesive composition may include an adhesive agent in which trimethylated silica, dimethyl siloxane copolymer, and ethylbenzene are mixed.

Specifically, the first adhesive composition may further include 0.5 to 1.5 parts by weight of a crosslinking agent, 0.5 to 1.5 parts by weight of an anchorage additive, and 0.5 to 1.8 parts by weight of a catalyst based on 100 parts by weight of the adhesive agent, and the adhesive agent is xylene (Xylene), Trimethylated silica, Ethylbenzene and siloxane with silicone, di-methyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, vinyl group-terminated; CAS No. 68083) -19-2) may include a mixed mixture.

In addition, the first adhesive composition contains 0.5 to 1.5 parts by weight of a crosslinking agent, 0.5 to 1.5 parts by weight of an anchorage additive, and a catalyst based on 100 parts by weight of the adhesive agent in which the first and second subjects are mixed in a ratio of 95:5 to 99:1. 0.5 to 1.5 parts by weight may be further included, and the first subject is xylene, trimethylated silica, ethylbenzene, and siloxane with silicon, di-methyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, vinyl group-terminated; CAS No. 68083-19-2) may include a mixed mixture, the second subject being siloxane and silicone, di-methyl, vinyl group-terminated A mixture of Siloxanes and Silicones, di-Me, vinyl group-terminated; CAS No. 68083-19-2) and 1-Ethynylcyclohexanol (CAS No. 78-27-3) may include.

The crosslinking agent may include a mixture of heptane and siloxane, silicone, and methyl hydrogen (CAS No. 63148-57-2), and the anchorage additive is trimethoxy [3 -(oxiranylmethoxy)propyl]silane (Silane, trimethoxy[3-(oxiranylmethoxy)propyl]-; CAS No. 2530-83-8), trimethoxy[(3-oxiranylmethoxy)propyl]silane Siloxanes and Silicones, di-Me, Me vinyl, hydroxy-terminated reaction products with trimethoxy[3-oxiranylmethoxy)propyl]silane ; CAS No. 102782-94-5), methanol and divinyl hexamethyl cyclotetrasiloxane (CAS No. 17980-61-9) may include a mixed mixture, the catalyst being platinum, 1, 3-diethenyl-1,1,3,3-tetramethyldisiloxane complexes (Platinium 1,3-diethenyl-1,1,3,3-tetramethyldisiloxane complexes; CAS No. 68478-92-2), with siloxanes Silicones and Silicones, di-Me, vinyl group-terminated (CAS No. 68083-19-2), Tetramethyldivinyldisiloxane (CAS No. 2627-95) -4) and mixtures of Siloxanes and Silicones, di-Me, hydroxy-terminated (CAS No. 70131-67-8).

In addition, the first adhesive composition may further include 0.5 to 3 parts by weight of a polymerization initiator with respect to 100 parts by weight of the adhesive agent in which the third and fourth subjects are mixed in a ratio of 50:50 to 80:20, and the third The topics covered are xylene, ethylbenzene, toluene, and siloxane and hydroxyl-terminated reaction products of silicon, di-methyl, chlorotrimethylsilane, hydrochloric acid, isopropyl alcohol, and sodium silicate (Siloxanes and silicones, di-Me, hydroxy-terminated reaction products with chlorotrimethylsilane, hydrochloric acid, iso-Pr alc. and sodium silicate; CAS No. 68440-70-0) may include a mixture, wherein the fourth subject is Toluene, Siloxanes and Silicones, Siloxanes and Silicones, di-Me, hydroxy-terminated (CAS No. 70131-67-8), Xylene, Trimethylated A mixture of trimethylated silica and ethylbenzene may be included, and the polymerization initiator may include benzoyl peroxide.

In addition, the first adhesive composition may further include 0.5 to 3 parts by weight of a polymerization initiator based on 100 parts by weight of the adhesive agent in which the third and fifth agents are mixed in a ratio of 50:50 to 80:20, and the third The topics covered are xylene, ethylbenzene, toluene, and siloxane and hydroxyl-terminated reaction products of silicon, di-methyl, chlorotrimethylsilane, hydrochloric acid, isopropyl alcohol, and sodium silicate (Siloxanes and silicones, di-Me, hydroxy-terminated reaction products with chlorotrimethylsilane, hydrochloric acid, iso-Pr alc. and sodium silicate; CAS No. 68440-70-0) may include a mixture, wherein the fifth subject is Toluene, siloxane and silicone, di-methyl, methylvinyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, Me vinyl, vinyl groupterminated; CAS No. 68083-18-1), Xylene ), Trimethylated silica, Ethylbenzene, Siloxanes and Silicones, Di-methyl, Methylvinyl, Hydroxy-terminated (Siloxanes and Silicones, di-Me, Me vinyl, hydroxy-terminated; CAS No. 67923-19-7) and 1-ethynylcyclohexanol (1-Ethynylcyclohexanol; CAS No. 78-27-3) may include a mixed mixture, and the polymerization initiator is benzoyl peroxide. may include.

According to another aspect of the present invention for achieving the objects of the present invention, the first base film comprising a polymer material or a metal material, the molecular structure has a helical network structure and contains a first adhesive layer containing silicon and fluorine manufacturing a first tape in which the first release film is sequentially laminated; manufacturing a second tape in which a second base film including a metal material, a molecular structure having a helical network structure, a second adhesive layer containing silicon, and a second release film containing fluorine are sequentially stacked; removing the first release film from the first tape; and laminating the first tape and the second tape so that the first adhesive layer and the second base film are in contact with each other.

The adhesive tape for a semiconductor package manufacturing process and a manufacturing method thereof according to the present invention provide the following effects.

First, since the adhesive tape for the semiconductor package manufacturing process according to the present invention has a very simple structure in which the first base film, the first adhesive layer, the second base film and the second adhesive layer are sequentially stacked, productivity and price competitiveness can be improved. there is an effect

In addition, since the first base film includes a single layer selected from the group consisting of polyethylene terephthalate (PET), polyimide (PI), and polyolefin (PO) or a multilayer in which two or more are laminated, the EMI shielding layer forming process There is an effect that can easily secure the stress characteristics required in the adhesive tape for the semiconductor package manufacturing process used in the case.

In addition, when the first base film is made of a polymer material, as the surface treatment is performed on one side of the first base film in contact with the first adhesive layer, even if a silicone material is used as the first adhesive layer, the adhesion between them can be improved. there is an effect

In addition, since the first base film has a thickness in the range of 10 μm to 150 μm, it has the effect of effectively maintaining the stress balance in response to the topology of the bottom surface of the semiconductor package in which the plurality of protruding electrodes are formed, and at the same time facilitating the handling of the adhesive tape.

In addition, since the second base film is deformed to correspond to the topology of the lower surface of the semiconductor package, and contains metal elements to independently maintain the deformed form between processes, it is used for the semiconductor package manufacturing process used in the EMI shielding layer forming process. There is an effect that can easily secure the adhesive properties and retention properties required for the adhesive tape. In addition, when the first base film contains a metal element in the same way as the second base film, there is an effect of more easily securing the above-described adhesive properties and retention properties.

In addition, since the second base film containing the metal element has a very thin thickness in the range of 10 μm to 35 μm, it is possible to effectively maintain the stress balance in response to the topology of the bottom surface of the semiconductor package in which the plurality of protruding electrodes are formed.

In addition, by implementing molecular structure continuity between the first adhesive layer and the second adhesive layer through a plurality of perforations formed in the second base film, a gap is generated between the semiconductor package and the adhesive tape in the region where the lower surface of the semiconductor package and the protruding electrode are in contact. Even so, there is an effect that can prevent excessive expansion of the pores between the manufacturing processes (especially during the process in a high vacuum environment).

In addition, since each of the first adhesive layer and the second adhesive layer contains an adhesive agent in which trimethylated silica, dimethylsiloxane copolymer and ethylbenzene are mixed, there is no change in physical properties due to heat generated during the EMI shielding layer forming process, and the semiconductor package manufacturing process There is an effect that can easily secure the adhesive properties, retention properties, separation properties and stress properties required in the adhesive tape for use.

In addition, since each of the first adhesive layer and the second adhesive layer has a helical network structure based on the siloxane bond as a basic skeleton, even if a void occurs between the semiconductor package and the adhesive tape in the region where the lower surface of the semiconductor package and the protruding electrode come into contact, (In particular, during a process in a high vacuum environment), there is an effect that can prevent excessive expansion of the pores.

In addition, since the second adhesive layer has a very thin thickness in the range of 10 μm to 50 μm, adhesion and adhesion are easy along the topology of the bottom surface of the semiconductor package in which the plurality of protruding electrodes are formed, and the second adhesive layer is attached to the edge side of the semiconductor package when attached. There is an effect that can prevent this surge phenomenon.

In addition, by providing the thickness of each of the first and second adhesive layers, and the thickness of each of the first and second base films, which are optimized in response to the size and spacing of the protruding electrodes of the semiconductor package, the EMI shielding layer forming process is used. There is an effect that can more effectively secure the adhesive properties, holding properties, separation properties and stress properties required in the adhesive tape for the semiconductor package manufacturing process.

In addition, since it is possible to reduce the consumption of process staff and consumables compared to the conventional EMI shielding layer forming process of the semiconductor package, there is an effect that can improve the productivity of the semiconductor package.

In addition, after manufacturing the first tape and the second tape individually, the first tape and the second tape are laminated at the site where the semiconductor package manufacturing process is performed to manufacture the adhesive tape, so transportation and storage are easy, and the adhesive It is possible to improve the quality of the tape and has the effect of improving the yield of the semiconductor package manufacturing process.

Effects of the present invention are not limited to those mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the following description.

1 is a diagram schematically illustrating a cross-section of an adhesive tape for a semiconductor package manufacturing process according to a first embodiment of the present invention.
FIG. 2 is a view illustrating a cross-sectional shape in which an adhesive tape for a semiconductor package manufacturing process is adhered to a lower surface of a semiconductor package according to a first embodiment of the present invention.
3A and 3B are views illustrating a planar shape of a second base film applicable to an adhesive tape for a semiconductor package manufacturing process according to the first and second embodiments of the present invention.
4 is a diagram schematically illustrating a cross-section of an adhesive tape for a semiconductor package manufacturing process according to a second embodiment of the present invention.
5 is a flowchart illustrating a manufacturing process of an adhesive tape for a semiconductor package manufacturing process according to an embodiment of the present invention.
6 is a flowchart illustrating a manufacturing process of a first tape and a second tape in the adhesive tape for a semiconductor package manufacturing process according to an embodiment of the present invention.

Since the present invention can apply various transformations and can have various embodiments, specific embodiments are illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, and it should be understood to include all modifications, equivalents and substitutes included in the spirit and scope of the present invention. In describing the present invention, if it is determined that a detailed description of a related known technology may obscure the gist of the present invention, the detailed description thereof will be omitted.

The terms used in the present application are only used to describe specific embodiments, and are not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly dictates otherwise. In the present application, terms such as “comprise” or “have” are intended to designate that a feature, number, step, operation, component, part, or combination thereof described in the specification exists, but one or more other features It should be understood that it does not preclude the possibility of the presence or addition of numbers, steps, operations, components, parts, or combinations thereof.

Terms such as first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The above terms are used only for the purpose of distinguishing one component from another.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings, and in the description with reference to the accompanying drawings, the same or corresponding components are given the same reference numbers regardless of the reference numerals, and duplicates thereof A description will be omitted. And, in the present specification, the name of the substance according to CAS No. will be used as the name provided by the Chemicals Comprehensive Information System (URL: https://icis.me.go.kr/).

An embodiment of the present invention, which will be described later, is to provide an adhesive tape for a semiconductor package manufacturing process. An object of the present invention is to provide an adhesive tape for a semiconductor package manufacturing process capable of protecting the lower surface of a semiconductor package and a plurality of protruding electrodes formed on the lower surface of the semiconductor package during the EMI (Electro Magnetic Interference) shielding layer forming process, and a manufacturing method thereof.

Prior to describing the adhesive tape for the semiconductor package manufacturing process according to the embodiment of the present invention, the adhesive tape for the semiconductor package manufacturing process typically used in the EMI shielding layer forming process has an adhesion characteristic, a retention characteristic ), there is a need to secure a remove characteristic and a stress characteristic.

First, in terms of adhesive properties, the base film and adhesive layer of the adhesive tape protrude regardless of the size (eg, diameter or height) of the protruding electrode so that an air gap does not occur in the area where the lower surface of the semiconductor package and the protruding electrode contact. Adhesion and adhesion should be possible in response to the topology of the lower surface of the semiconductor package including the electrode and the protruding electrode. In addition, in a process environment for forming the EMI shielding layer, for example, in a high-temperature and high-vacuum environment, the protruding electrode must be adhered well without pushing it. That is, it is necessary to continuously maintain the adhesive ability and the adhesion ability even in the process environment for forming the EMI shielding layer.

Next, in terms of retention characteristics, under the process conditions for forming the EMI shielding layer, the circular shape is maintained without self-denaturation, deformation, discoloration, and outgassing, and at the same time, gases and particles between the processes are removed from the adhesive tape and the semiconductor package. It should be able to maintain adhesive and sealing ability to prevent penetration between adhesive surfaces. In addition, when a void is generated in a region where the lower surface of the semiconductor package and the protruding electrode contact each other, it should be possible to prevent excessive expansion of the void between processes (particularly, during a process in a high vacuum environment).

Next, in terms of separation characteristics, when the adhesive tape is separated from the semiconductor package at room temperature and atmospheric pressure after completing the process of forming the EMI shielding layer, it is easily separated with little force and at the same time as the lower surface of the semiconductor package and the protruding electrode. There should be no adhesive material remaining on the surface. In particular, it should have an adhesive force that can be easily separated through an automated facility that automatically separates the semiconductor package (or chip) from the adhesive tape, and is attached to a vacuum chuck or lift pin used in an automated facility. It should not be punctured or torn. In general, since the maximum tolerable tension of an automated facility that automatically separates a semiconductor package (or semiconductor chip) from an adhesive tape is around 500 gf/25 mm, it would be preferable for the adhesive tape to have an adhesive force lower than this in terms of separation characteristics.

In terms of stress characteristics, since a plurality of semiconductor packages, ie, a plurality of semiconductor chips, are seated and adhered to the adhesive tape during the EMI shielding layer forming process, the EMI shielding layer is maintained at a constant distance between adjacent semiconductor chips. Appropriate levels of tensile and compressive stress must be secured so that the forming process can proceed. That is, the adhesive tape should be able to stably maintain a stretched state and maintain a stress balance corresponding to the topology of the lower surface of the semiconductor package including the protruding electrode.

Accordingly, an embodiment of the present invention to be described below provides an adhesive tape for a semiconductor package manufacturing process capable of satisfying adhesive characteristics, retention characteristics, separation characteristics, and stress characteristics required in the semiconductor package manufacturing process, particularly in the EMI shielding layer forming process. . To this end, the adhesive tape for a semiconductor package according to an embodiment of the present invention may have a simple structure in which a base film and an adhesive layer are laminated to secure productivity and price competitiveness. The adhesive layer maintains chemical resistance, heat resistance and cold resistance, there is no outgassing, has a thickness that allows adhesion and adhesion according to the topology of the lower surface of the semiconductor package on which a plurality of protruding electrodes are formed, and is soft and non-modified for impregnation of the protruding electrodes, It may be made of a silicone material so that the residue is not transferred during desorption. In addition, the base film stably maintains a taut state without stretching during the semiconductor package manufacturing process, and at the same time can be deformed in shape in response to the topology of the adherend surface, can maintain a deformed shape between processes by itself, high temperature and high vacuum It may be made of a metal material so that it does not undergo denaturation and deformation in the environment.

Hereinafter, an adhesive tape for a semiconductor package according to embodiments of the present invention will be described in detail with reference to the drawings.

1 is a diagram schematically illustrating a cross-section of an adhesive tape for a semiconductor package manufacturing process according to a first embodiment of the present invention, and FIG. 2 is a semiconductor package adhesive tape for a semiconductor package manufacturing process according to a first embodiment of the present invention. It is a diagram showing the cross-sectional shape adhered to the lower surface of the 3A and 3B are views showing the planar shape of the second base film applicable to the adhesive tape for the semiconductor package manufacturing process according to the first and second embodiments of the present invention.

1 and 2, the adhesive tape 10 for the semiconductor package 400 manufacturing process according to the first embodiment of the present invention includes a first tape 100 and a second tape 200 stacked thereon. can have a form. The first tape 100 and the second tape 200 may be separately manufactured to facilitate transportation and storage, and the first tape 100 and the second tape 200 may be manufactured in the field during the semiconductor package 400 manufacturing process. By laminating the adhesive tape 10 can be manufactured and used. The second tape 200 may be in contact with the lower surface of the semiconductor package 400 on which the plurality of protruding electrodes 410 are formed, and the plurality of protruding electrodes 410 formed on the lower surface of the semiconductor package 400 may be connected to the second tape 200 . ), and at the same time may have a form impregnated with the first tape 100 . For reference, although not shown in the drawings, the EMI shielding layer may be formed on the front surface of the semiconductor package 400 excluding the lower surface, that is, on the upper surface and the side surface of the semiconductor package 400 .

In the adhesive tape 10 according to the first embodiment, the first tape 100 may serve to prevent the second tape 200 from being damaged between processes. In addition, the first tape 100 may also serve to prevent a process failure from occurring even if the second tape 200 is partially damaged between processes. For reference, in the process of pressing the semiconductor package 400 with the adhesive tape 10 in order to attach and adhere the adhesive tape 10 to the lower surface of the semiconductor package 400 on which the plurality of protruding electrodes 410 are formed, the protruding electrodes 410 ) and/or a phenomenon in which the adhesive tape 10 is torn by the edge of the semiconductor package 400 may occur. However, since the adhesive tape 10 according to the first embodiment has a form in which the first tape 100 and the second tape 200 are laminated, it is possible to prevent the adhesive tape 10 from being damaged during the pressing process. . In addition, even if the second tape 200 having a relatively thin thickness compared to the first tape 100 is torn during the pressing process, the first tape 100 compensates for this, thereby preventing a process failure from occurring.

Specifically, in the adhesive tape 10 according to the first embodiment, in the first tape 100 , the first base film 110 including a polymer material or a metal material and the first adhesive layer 120 containing silicon are sequentially formed. may have a laminated form, and the second tape 200 may have a form in which a second base film 210 containing a metal material and a second adhesive layer 220 containing silicon are sequentially laminated. Here, one surface and the other surface of the second base film 210 may be in contact with the first adhesive layer 120 and the second adhesive layer 220, respectively, and may have a shape inserted therebetween.

In the first embodiment, the first base film 110 may include a material different from that of the second base film 210 , or may include the same material. In the former case, the first base film 110 may include a polymer material, and the second base film 210 may include a metal material. In the latter case, the first base film 110 and the second base film 210 may include a metal material.

First, when the first base film 110 includes a material different from that of the second base film 210 , the first base film 110 may include a polymer material. Specifically, the first base film 110 stably maintains a taut state without stretching between the semiconductor package 400 processes and at the same time corresponds to the topology of the lower surface of the semiconductor package 400 in which a plurality of protruding electrodes 410 are formed. It can maintain the stress balance, and may include a polymer material that does not deform or deform in a high-temperature and high-vacuum environment. Accordingly, the first base film 110 is a single layer selected from the group consisting of polyethylene terephthalate (PET), polyimide (PI), and polyolefine (PO) or a multilayer in which two or more are stacked. can have a structure.

The first base film 110 including the polymer material may have a thickness in the range of 10 μm to 150 μm. Here, when the thickness of the first base film 110 is less than 10 μm, it may be very difficult for the user to handle the adhesive tape 10 , and when the thickness of the first base film 110 exceeds 150 μm, multiple It may be difficult to maintain a stress balance corresponding to the topology of the lower surface of the semiconductor package 400 on which the protruding electrode 410 is formed. For reference, if the stress balance is not maintained, the repulsive force between the semiconductor package 400 and the adhesive tape 10 increases. can act as

In the first base film 110 including a polymer material, one surface of the first base film 110 in contact with the first adhesive layer 120 may be surface-treated to improve adhesion therebetween. Since the silicone material used as the first adhesive layer 120 is not easy to mix, stir, and adhere with a dissimilar material due to its unique chemical stability, the adhesive strength with the surface of the first base film 110 that is not surface-treated is low, so it floats. A phenomenon may occur, or a defect in the form in which the adhesive material is transferred to the adherend may occur. The surface treatment is to fundamentally prevent the above-described defects from occurring, and corona discharge treatment or ion assisted reaction may be used. Fine irregularities may be formed on one surface of the surface-treated first base film 110 , and the surface area and roughness of one surface of the first base film 110 may be increased due to the fine irregularities. In addition, a dipole is formed inside the surface-treated first base film 110 , and one surface of the first base film 110 in contact with the first adhesive layer 120 may be charged by the dipole. there is. In addition, free-radicals having unpaired electrons may be attached to one surface of the surface-treated first base film 110 . As such, one surface of the surface-treated first base film 110 has an increased surface area and roughness, has a charged surface due to the dipole formed inside the first base film 110, and has unpaired electrons on the surface. - Even when the first adhesive layer 120 is formed using a silicone material as the radicals are attached, the adhesive force between the first base film 110 and the first adhesive layer 120 can be effectively improved. That is, it is possible to prevent the first adhesive layer 120 containing silicon from being peeled off from the first base film 110 through the surface treatment.

Next, when the first base film 110 and the second base film 210 include the same material, each of the first base film 110 and the second base film 210 may include a metal material. . Hereinafter, for convenience of description, the second base film 210 will be exemplified and the base film including the metal material will be described in detail.

In the second tape 200, the second base film 210, like the first base film 110, stably maintains a taut state without stretching between the semiconductor package 400 processes, and at the same time a plurality of protruding electrodes 410 A stress balance may be maintained corresponding to the topology of the lower surface of the formed semiconductor package 400 , and may be made of a material that is not deformed or deformed in a high temperature and high vacuum environment. In particular, the second base film 210 may be deformed in shape to correspond to the topology of the bottom surface of the semiconductor package 400 when attached, and independently maintain the shape deformed to correspond to the topology of the bottom surface of the semiconductor package 400 between processes. can To this end, the second base film 210 may include 99 wt% or more of a metal element.

For example, the second base film 210 may include 99 wt% or more of aluminum (Al). In addition, the second base film 210 contains not more than 99 wt% of aluminum and 1 wt% or less of additives to control the properties of the second base film 210, for example, tensile strength and elongation. may include The additive may include any one or two or more selected from the group consisting of silicon (Si), iron (Fe), manganese (Mn), magnesium (Mg), zinc (Zn), and titanium (Ti). More specifically, the second base film 210 is 99.35 wt% or more aluminum, 0.15 wt% or less silicon, 0.42 wt% or less iron, 0.05 wt% or less copper, 0.05 wt% or less manganese, 0.05 wt% or less of magnesium, 0.1 wt% or less of zinc, and 0.06 wt% or less of titanium. Here, 99.35 wt% or more of aluminum may refer to a weight ratio of 99.35 wt% or more and less than 100 wt%, and 0.15 wt% or less of silicon may refer to a weight ratio of 0.15 wt% or less and more than 0 wt% . In addition, the weight ratio ranges of iron, copper, manganese, magnesium, zinc, and titanium can be analyzed as in the above-described silicon.

The second base film 210 containing 99 wt% or more of aluminum as described above stably maintains a taut state without stretching during the semiconductor package 400 process, and at the same time has a shape to correspond to the topology of the lower surface of the semiconductor package 400 . ^{It may be deformable, and may have a tensile strength of at least 6 kgf/mm 2} or more and an elongation of at least 8% or more so as to independently maintain a deformed shape between processes. More specifically, the second base film 210 containing 99 wt% or more of aluminum may ^{have a tensile strength in the range of 6 kgf/mm 2} to 12 kgf/mm ² and an elongation in the range of 8% to 16%. can Here, when the tensile strength is ^{less than 6 kgf/mm 2} , the second base film 210 is broken or torn by an external force applied during the manufacturing process of the adhesive tape 10 and the semiconductor package 400 manufacturing process. In the case of more than 12 kgf/mm ² , it may be difficult to deform the shape corresponding to the topology of the lower surface of the semiconductor package 400 . In addition, when the elongation is less than 8%, it may be difficult to deform the shape corresponding to the topology of the lower surface of the semiconductor package 400 , and when the elongation is more than 12%, it may be difficult to continuously maintain the deformed shape between processes. On the other hand, the tensile strength of the second base film 210 is the Korean Industrial Standard KS B 0801 No. It may be measured based on 5, and the smoke loss rate may be measured based on Korean Industrial Standard KS B 0802.

As another example, the second base film 210 may include 99 wt% or more of copper (Cu). In addition, the second base film 210 may contain 1 wt% or less of an additive to control properties of the second base film 210, for example, tensile strength and elongation, in addition to 99 wt% or more of copper. The additive may include any one or two or more selected from the group consisting of silicon (Si), iron (Fe), manganese (Mn), magnesium (Mg), zinc (Zn), and titanium (Ti). More specifically, the second base film 210 may include 99.9 wt% or more of aluminum and 0.1 wt% or less of zinc. Here, 99.9 wt% or more of aluminum may refer to a weight ratio of 99.9 wt% or more and less than 100 wt%, and 0.1 wt% or less of zinc may refer to a weight ratio of 0.1 wt% or less and more than 0 wt% .

The second base film 210 containing more than 99 wt% of copper as described above stably maintains a taut state without stretching during the semiconductor package 400 process, and at the same time has a shape to correspond to the topology of the lower surface of the semiconductor package 400 . ^{It may be deformed and may have a tensile strength of at least 10 kgf/mm 2} or more and an elongation of at least 4% or more so as to independently maintain a deformed shape between processes. More specifically, the second base film 210 containing 99 wt% or more of copper may ^{have a tensile strength in the range of 10 kgf/mm 2} to 26 kgf/mm ² and an elongation in the range of 4% to 12%. can Here, when the tensile strength is ^{less than 10 kgf/mm 2} , the second base film 210 is broken or torn by an external force applied during the manufacturing process of the adhesive tape 10 and the semiconductor package 400 manufacturing process. In the case of more than 26 kgf/mm ² , it may be difficult to deform the shape corresponding to the topology of the lower surface of the semiconductor package 400 . In addition, when the elongation is less than 4%, it may be difficult to deform the shape corresponding to the topology of the lower surface of the semiconductor package 400 , and when the elongation is more than 12%, it may be difficult to continuously maintain the deformed shape between processes. On the other hand, the tensile strength of the second base film 210 is the Korean Industrial Standard KS B 0801 No. It may be measured based on 5, and the smoke loss rate may be measured based on Korean Industrial Standard KS B 0802.

In addition, the second base film 210 improves the adhesion between the first adhesive layer 120 and the second base film 210 , and improves the adhesion between the second adhesive layer 220 and the second base film 210 , the second In order to easily implement a uniform thickness of the second adhesive layer 220 formed on the base film 210 and a target thickness of the second adhesive layer 220, a surface tension of at least 56 Dyne/cm and a surface of 0.4 μm or less It may have a roughness (Ra). Here, the surface tension and surface roughness are about the other surface of the second base film 210 in contact with the first adhesive layer 120 and one surface of the second base film 210 in contact with the second adhesive layer 220, and the surface roughness is It means the arithmetic mean roughness.

More specifically, the second base film 210 may have a surface tension in the range of 56 Dyne/cm to 72 Dyne/cm, and may have a surface roughness in the range of 0.3 μm to 0.4 μm. Here, when the surface tension is less than 56 Dyne / cm, the adhesion between the first adhesive layer 120 and the second adhesive layer 220 and the second base film 210 may be reduced, and the target of the second adhesive layer 220 Thickness can be difficult to implement. On the other hand, when the surface tension exceeds 72 Dyne/cm, it may be difficult to form the second adhesive layer 220 having a uniform thickness. And, when the surface roughness is less than 0.3㎛, the adhesion between the first adhesive layer 120 and the second adhesive layer 220 and the second base film 210 may be reduced, and when it is more than 0.4㎛, the second base film The tensile strength and elongation of (210) may be reduced. The tensile strength, elongation, and surface tension of the second base film 210 are determined by the composition of the material constituting the second base film 210, that is, 99 wt% or more of a metal element and 1 wt% or less of an additive content (or weight ratio). It can be adjusted and controlled.

Also, the second base film 210 may have a thickness in the range of 10 μm to 35 μm. When the thickness of the second base film 210 is less than 10 μm, it may be very difficult for the user to handle the adhesive tape 10 . On the other hand, when the thickness of the second base film 210 exceeds 35 μm, It may be difficult to deform the shape corresponding to the topology of the lower surface of the semiconductor package 400 in which the plurality of protruding electrodes 410 are formed, and it may be difficult to maintain stress balance. For reference, if the stress balance cannot be maintained, after the adhesive tape 10 is adhered to the semiconductor package 400 , since the repulsive force between the semiconductor package 400 and the second adhesive layer 220 increases, the semiconductor package 400 . and the second adhesive layer 220 may act as a cause of lowering the adhesive ability and the adhesive ability.

In addition, in order to further improve the properties of the adhesive tape 10 due to the second base film 210, as the size of the protruding electrode 410, for example, the diameter of the shoulder ball increases, the second base film ( 210) may be reduced. That is, an inverse relationship may be established between the thickness of the second base film 210 and the size of the protruding electrode 410 . On the other hand, as the distance between the protruding electrodes 410 increases, the thickness of the second base film 210 may increase within a set thickness range. That is, a proportional relationship may be established between the thickness of the second base film 210 and the interval between the adjacent protruding electrodes 410 . Through this, since the second base film 210 can independently deform and maintain the deformed form, the thickness is adjusted in response to the change in the size and spacing of the protruding electrode 410 together with the second adhesive layer 220 . It is possible to more effectively improve the stress characteristic, the adhesive characteristic, and the holding characteristic of the adhesive tape 10 for the semiconductor package 400 manufacturing process.

In addition, since the second base film 210 includes a plurality of metal elements, the shape can be deformed in response to the topology of the lower surface of the semiconductor package 400, and the deformed shape is maintained by the second adhesive layer 220 between processes. At the same time, the second base film 210 may maintain its own deformed shape. Accordingly, it is possible to further improve the adhesive properties and retention properties of the adhesive tape 10 . That is, the second base film 210 serves to prevent the second adhesive layer 220 from being pushed out from the protruding electrode 410 during the process, so that the second base film 210 has the adhesive force of the second adhesive layer 220 . can be supplemented and improved. Through this, the adhesive strength of the second adhesive layer 220 is lower than the normally required adhesive strength (eg, around 500 gf/25 mm) to facilitate separation of the adhesive tape 10 from the semiconductor package 400 after a predetermined process is completed. Even if set, this can be supplemented through the second base film 210 . For reference, when a base film including a polymer material is also attached, the shape of the base film is deformed corresponding to the topology of the bottom surface of the semiconductor package 400, but this is due to the adhesive layer, and the shape of the polymer material is not independently deformed.

In addition, as shown in Fig. 3a, the second base film 210 has a flat shape in the form of a flat plate, or as shown in Fig. 3b, a plurality of perforations penetrating the second base film 210 ( 212) may have a planar shape in the form of a mesh. Here, the plurality of perforations 212 are regularly arranged in the second base film 210 , and the size of each of the plurality of perforations 212 is the physical property of the second base film 210 required for the adhesive tape 10 . For example, it may have a range of 1% to 3% relative to the size of the protruding electrode 410 so that tensile strength and elongation are not deteriorated. In addition, the planar shape of each of the plurality of perforations 212 may have any one shape selected from the group consisting of a triangular or more polygonal, oval, or circular shape.

As shown in FIG. 3b , when the second base film 210 has a plurality of perforations 212 , the first adhesive layer 120 and the second adhesive layer 220 are formed on the second base film 210 . Direct contact may be made through the plurality of perforations 212 . Through this, the adhesive force between the first tape 100 and the second tape 200 is improved, and at the same time, the semiconductor package 400 and the adhesive tape ( 10) Even if a void occurs between the processes, it is possible to effectively prevent excessive expansion of the void between processes (especially during a process in a high vacuum environment). This is because the molecular structure between the first adhesive layer 120 and the second adhesive layer 220 , that is, the continuity of the spiral network structure can be provided through the plurality of perforations 212 .

On the other hand, when the base film contains a polymer material, it is difficult to mix, stir, and adhere to different materials due to the unique chemical stability of the silicone material used as the adhesive layer, so a separate surface treatment for the base film is performed. However, since the second base film 210 contains a plurality of metal elements, it has high adhesion with the first and second adhesive layers 120 and 220 containing silicon, and does not require a separate surface treatment. . Through this, productivity can be improved and process costs can be reduced.

In the first embodiment, the first adhesive layer 120 and the second adhesive layer 220 maintain a constant thickness as much as possible along the topology of the bottom surface of the semiconductor package 400 in which the plurality of protruding electrodes 410 are formed. Depending on the topology, it may have an adhesive form. More specifically, the first adhesive layer 120 and the second adhesive layer 220 are adhered along the topology of the bottom surface of the semiconductor package 400 in which the plurality of protruding electrodes 410 are formed, and the first adhesive layer 120 has a plurality of inside. The protruding electrodes 410 of the may be impregnated, and the second adhesive layer 220 may have a shape surrounding the plurality of protruding electrodes 410 .

The first tape 100 prevents damage to the second tape 200 between processes, facilitates handling of the second tape 200 having a relatively thin thickness, and provides a cushion for the protruding electrode 410 . Because it performs the role of the first adhesive layer 120 may have a thicker thickness than the second adhesive layer (220). In addition, since the first tape 100 substantially acts as a base film for the second tape 200 , the adhesive force of the first adhesive layer 120 may be greater than that of the second adhesive layer 220 . More specifically, the first adhesive layer 120 has a thickness in a range of 100 μm to 700 μm and an adhesive strength of at least 500 gf/25 mm, for example, 500 gf/25 mm to 2500 gf/25 mm, so that the protruding electrode 410 can be impregnated therein. It can have a range of adhesive strength. In addition, the second adhesive layer 220 may have a thickness in a range of 10 μm to 50 μm and an adhesive strength in a range of 200 gf/25 mm to 300 gf/25 mm.

When the thickness of the first adhesive layer 120 is less than 100 μm, the adhesive tape 10 impregnates the protruding electrode 410 and thus the ability to provide a cushion for the protruding electrode 410 between processes may be reduced, and 700 μm may occur. If it exceeds, the adhesive ability, sealing ability, and retention characteristics between the lower surface of the semiconductor package 400 and the adhesive tape 10 may be deteriorated. And, when the adhesive force of the first adhesive layer 120 is less than 500 gf/25mm, when the adhesive tape 10 is removed from the semiconductor package key, the first tape 100 is peeled off from the second tape 200. can occur On the other hand, when the adhesive force of the first adhesive layer 120 exceeds 2500 gf/25mm, it may be difficult to realize the thickness of the first adhesive layer 120 required for the adhesive tape 10 . This is because the adhesive strength of the adhesive layer containing silicone has a characteristic that is discontinuously proportional to the thickness of the adhesive layer. For reference, the adhesive force of the first adhesive layer 120 may mean an initial adhesive force on the bonding surface where the first adhesive layer 120 and the second base film 210 are in contact.

The first adhesive layer 120 has a thickness in the range of 100 μm to 700 μm, and as the size of the protruding electrode 410 increases, the thickness of the first adhesive layer 120 may be reduced within a set thickness range. This is because the surface area of the protruding electrode 410 increases as the size of the protruding electrode 410 increases, so that in the pressing process for attaching and adhering the semiconductor package 400 and the adhesive tape 10 to the second tape 200 , especially , because the possibility that the second base film 210 composed of a thin metal thin film is less likely to be damaged. On the other hand, the first adhesive layer 120 has a thickness in the range of 100 μm to 700 μm, and as the distance between the protruding electrodes 410 increases, the thickness of the first adhesive layer 120 may be increased within a set thickness range. This is because, as the distance between the protruding electrodes 410 increases, the external force, that is, the pressure applied during pressing for attaching and adhering the semiconductor package 400 and the adhesive tape 10 to each other is increased. That is, as the external force applied during pressurization increases, the possibility of damage to the second tape 200 , in particular, the second base film 210 made of a thin metal thin film increases.

The second adhesive layer 220 may have a thickness in the range of 10 μm to 50 μm to enable tight adhesion along the topology of the bottom surface of the semiconductor package 400 on which the protruding electrode 410 is formed. Here, when the thickness of the second adhesive layer 220 is less than 10 μm, it may be difficult to secure the required adhesive force, and when it exceeds 50 μm, it is difficult to remove the adhesive tape 10 after completion of the process, or when attaching The second adhesive layer 220 may be pushed out to the side of the semiconductor package 400 by the pressing pressure, which may cause a deposition defect of the EMI shielding layer. As such, the second adhesive layer 220 may have a thickness in the range of 10 μm to 50 μm, and through this, the stress balance in the second adhesive layer 220 may be maintained to improve adhesive properties and retention properties, and the semiconductor It is possible to prevent a gap from being generated between the semiconductor package 400 and the adhesive tape 10 in a region where the lower surface of the package 400 and the protruding electrode 410 contact each other.

In addition, the second adhesive layer 220 has a thickness in the range of 10 μm to 50 μm, and as the size of the protruding electrodes 410 increases, the thickness may increase within a set range, and the gap between the protruding electrodes 410 increases. As it increases, the thickness may decrease within a set range. By adjusting the thickness of the second adhesive layer 220 in response to changes in the size and spacing of the protruding electrodes 410 , the adhesive properties, separation properties, and retention properties of the adhesive tape 10 for the semiconductor package 400 manufacturing process are more effectively improved. can be improved

In addition, the second adhesive layer 220 may have an adhesive force in the range of 200 gf/25mm to 300 gf/25mm in order to secure adhesive properties, retention properties, and separation properties. Here, when the adhesive force of the second adhesive layer 220 is less than 200 gf/25mm, the second adhesive layer 220 is the semiconductor package 400 under the process environment for forming the EMI shielding layer, for example, in a high temperature and high vacuum environment. A phenomenon of being pushed from the plurality of protruding electrodes 410 formed on the lower surface of the package 400 may occur, or gas and particles between processes may penetrate between the adhesive tape 10 and the adhesive surface of the semiconductor package 400 . On the other hand, when the adhesive strength of the second adhesive layer 220 exceeds 300 gf/25 mm, when the adhesive tape 10 is removed at room temperature and atmospheric pressure after completing the EMI shielding layer forming process, the adhesive tape 10 may not be easily removed, or an adhesive material may remain on the lower surface of the semiconductor package 400 and the surface of the protruding electrode 410 .

In the first embodiment, each of the first adhesive layer 120 and the second adhesive layer 220 maintains chemical resistance, heat resistance, and cold resistance, and at the same time there is no outgassing, and is soft for impregnation of the protruding electrode 410, no denaturation, and detachment. It may be made of a silicone material so that the residue is not transferred. Specifically, each of the first adhesive layer 120 and the second adhesive layer 220 containing silicon may have a siloxane bond as a basic skeleton. More specifically, the first adhesive layer 120 and the second adhesive layer 220 have a siloxane bond as a basic skeleton, and adhere to the semiconductor package 400 in a region where the lower surface of the semiconductor package 400 and the protruding electrode 410 are in contact. Even if voids are generated between the tapes 10 , the molecular structure may have a spiral network structure to prevent excessive expansion of the voids between processes (particularly, during a process in a high vacuum environment). For reference, the first adhesive layer 120 and the second adhesive layer 220 having a siloxane bond as a basic skeleton is a helical network having a wide spacing between molecules according to the number and type of functional groups bonded to the side chain of the siloxane bond. Since the structure can be implemented, it is possible to prevent excessive expansion of the pores in a high vacuum environment through the space between molecules in addition to the helical network structure.

Here, the siloxane bond is an interconnection of silicon (Si) and oxygen (O), and since the bonding energy between silicon (Si) and oxygen (O) is large, excellent heat resistance and chemical resistance can be secured. In addition, since the siloxane bond has amorphous nature that makes it difficult to form a crystal structure in terms of molecular structure, it has a low glass transition point and thus excellent cold resistance can be secured. When molecules approach each other, a force of attraction between the molecules acts to form a kind of bonding state. Siloxane bonds can have a low glass transition point because the attraction between the molecules is small. Due to this molecular structure, the first adhesive layer 120 and the second adhesive layer 220 having the siloxane bond as a basic skeleton are difficult to harden, and the viscosity change according to temperature is small, so that stable physical properties can be exhibited over a wide temperature range.

In order to easily implement the thickness, adhesive force and molecular structure of each of the first and second adhesive layers 120 and 220, the first adhesive layer 120 and the second adhesive layer 220 are trimethylated silica. ), a dimethyl siloxane copolymer, and an adhesive composition including an adhesive agent in which ethylbenzene is mixed. Here, the dimethyl siloxane copolymer may also include a dimethyl siloxane block copolymer. In the adhesive agent, trimethylated silica may play a role in controlling adhesion according to the content, and dimethylsiloxane copolymer may serve to provide a basic skeleton of siloxane bonds. In addition, ethylbenzene may serve to generate an intermediate product to facilitate bonding between trimethylated silica, dimethylsiloxane copolymer, and other additives.

Hereinafter, a plurality of adhesive compositions applicable to the first adhesive layer 120 and the second adhesive layer 220 of the adhesive tape 10 according to an embodiment of the present invention, that is, the first adhesive composition to the sixth adhesive composition will be described in detail. decide to do Here, the first adhesive layer 120 and the second adhesive layer 220 may be a single layer composed of any one of a first adhesive composition to a sixth adhesive composition to be described later, or a multilayer structure in which two or more are stacked.

First, the first adhesive composition may include 0.5 to 1.5 parts by weight of a crosslinker, 0.5 to 1.5 parts by weight of an anchorage additive, and 0.5 to 1.5 parts by weight of a catalyst based on 100 parts by weight of the first adhesive agent. there is. When forming the first adhesive layer 120 and the second adhesive layer 220 to a thickness in a range of 100 μm to 250 μm and a thickness in a range of 10 μm to 20 μm, respectively, the first adhesive composition may be used.

Specifically, the first adhesive agent is toluene (Toluene), xylene (Xylene), ethylbenzene (Ethylbenzene), 1-ethynylcyclohexanol (1-Ethynylcyclohexanol; CAS No. 78-27-3), trimethylated Trimethylated silica, siloxanes and silicones, di-methyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, vinyl group-terminated; CAS No. 68083-19-2), dimethyl, methylvinylsiloxane, hydride Dimethyl, methylvinyl siloxane, hydroxy-, vinyl-terminated (no CAS No.), Dimethyl, methylvinyl siloxane, dimethylvinyl-terminated; CAS. N. 68083-18-1) and Siloxanes and Silicones, di-Me, Me vinyl, hydroxy-terminated (CAS No. 67923-19-7). It may include a mixture mixed in a ratio of. Here, 1-ethynylcyclohexanol may serve to control the curing rate, and toluene and xylene may be used as solvents. and siloxane and silicone, di-methyl, vinyl-terminated, dimethyl, methylvinylsiloxane, hydroxy, vinyl-terminated, dimethyl, methylvinylsiloxane, dimethylvinyl-terminated and siloxane and silicone, di-methyl, Methylvinyl, hydroxy-terminated may be a dimethylsiloxane copolymer.

More specifically, in the total of the first adhesive agent, toluene is in the range of 20% to 25%, xylene is in the range of 10% to 20%, ethylbenzene is in the range of 2.5% to 10%, 1-ethynylcyclo hexanol in a proportion ranging from 0.1% to 1%, trimethylated silica in a proportion ranging from 30% to 40%, siloxane and silicone, di-methyl, vinyl-terminated in a proportion ranging from 10% to 20%, dimethyl , methylvinylsiloxane, hydroxy, vinyl-terminated in a proportion ranging from 1% to 10%, dimethyl, methylvinylsiloxane, dimethylvinyl-terminated in a proportion ranging from 1% to 10%, siloxane and silicone, di-methyl , methylvinyl, hydroxy-terminated may each account for a proportion ranging from 1% to 10%.

The crosslinking agent reacts with the adhesive agent to control the crosslinking and curing reaction, and may play a role of helping to more easily form a helical network structure in the adhesive composition. As the crosslinking agent, a crosslinking mixture in which heptane, siloxane, silicone, and methyl hydrogen (Siloxanes and Silicones, Me hydrogen; CAS No. 63148-57-2) are mixed in a predetermined ratio may be used. In the total crosslinking mixture, heptane may account for a proportion in the range of 0.25% to 1%, and siloxane, silicone and methylhydrogen may account for 99% to 99.75%.

The anchorage additive may serve to provide adhesion between the silicone and the substrate. As an anchorage additive, trimethoxy[3-(oxiranylmethoxy)propyl]-silane (Silane, trimethoxy[3-(oxiranylmethoxy)propyl]-; CAS No. 2530-83-8), trimethoxy[(3- Siloxanes and silicones combined with oxiranylmethoxy)propyl]silane, di-methyl, di-vinyl, and hydroxy-terminated reaction products (Siloxanes and Silicones, di-Me, Me vinyl, hydroxy-terminated reaction products with trimethoxy[3-oxiranylmethoxy)propyl]silane; CAS No. 102782-94-5), methanol, and divinyl hexamethyl cyclotetrasiloxane (CAS No. 17980-61-9) may be used as an anchorage mixture in a predetermined ratio. In the total anchorage mixture, trimethoxy[3-(oxiranylmethoxy)propyl]silane is present in a proportion ranging from 30% to 40%, trimethoxy[(3-oxiranylmethoxy)propyl] Silicones, di-methyl, di-vinyl, hydroxy-terminated reaction products in a proportion ranging from 60% to 70%, methanol in a proportion ranging from 1% to 3%, divinylhexamethylcyclotetrasiloxane in a proportion ranging from 1% to Each may occupy a proportion in the range of 2.5%.

The catalyst may serve to help the reaction, curing, and cross-linking work proceed even under low temperature or mild conditions by reducing the reaction activation energy. A platinum catalyst may be used as the catalyst. Specifically, the catalyst includes platinum, 1,3-diethenyl-1,1,3,3-tetramethyldisiloxane complexes (Platinium 1,3-diethenyl-1,1,3,3-tetramethyldisiloxane complexes; CAS No. 68478-92-2), Siloxanes and Silicones, di-Me, vinyl group-terminated (CAS No. 68083-19-2), tetramethyldivinyldi Siloxanes (Tetramethyldivinyldisiloxane; CAS No. 2627-95-4) and siloxanes and silicones, di-Me, hydroxy-terminated (CAS No. 70131-67-8) A catalyst mixture mixed in a predetermined ratio may be used. Platinum, 1,3-diethenyl-1,1,3,3-tetramethyldisiloxane complex throughout the catalyst mixture in a ratio ranging from 1% to 10%, siloxane and silicone, di-methyl, vinyl-terminated is a proportion in the range of 90% to 99%, tetramethyldivinyldisiloxane is in a proportion ranging from 1% to 10%, and siloxane and silicone, di-methyl, and hydroxy-terminated in a proportion ranging from 1% to 10%, respectively. can occupy

Next, the second adhesive composition may include 0.5 to 1.5 parts by weight of a crosslinking agent, 0.5 to 1.5 parts by weight of an anchorage additive, and 0.5 to 1.5 parts by weight of a catalyst based on 100 parts by weight of the second adhesive agent. Here, the crosslinking agent, the anchorage additive and the catalyst may be the same as those described above. When the first adhesive layer 120 and the second adhesive layer 220 are formed to have a thickness in a range of 200 μm to 400 μm and a thickness in a range of 20 μm to 30 μm, respectively, the second adhesive composition may be used.

Specifically, the second adhesive agent is xylene, trimethylated silica, ethylbenzene, and siloxane with silicone, di-methyl, vinyl group-terminated (Siloxanes and Silicones, di-Me). , vinyl group-terminated; CAS No. 68083-19-2) may include a mixture mixed in a predetermined ratio. Here, xylene may be used as a solvent, and siloxane and silicone, di-methyl, and vinyl group-terminated may be a dimethylsiloxane copolymer. More specifically, in the total of the second adhesive agent, xylene in a proportion in the range of 29% to 37%, trimethylated silica in a proportion in the range of 29% to 34%, ethylbenzene in a proportion in the range of 9% to 11%, siloxane and Silicone, di-methyl, and vinyl-terminated groups may each account for a proportion ranging from 21% to 24%.

Next, the third adhesive composition may include 0.5 to 1.5 parts by weight of a crosslinking agent, 0.5 to 1.5 parts by weight of an anchorage additive, and 0.8 to 1.8 parts by weight of a catalyst based on 100 parts by weight of the second adhesive agent. Here, the crosslinking agent, the anchorage additive and the catalyst may be the same as those described above. When the first adhesive layer 120 and the second adhesive layer 220 are formed to have a thickness in a range of 400 μm to 550 μm and a thickness in a range of 30 μm to 40 μm, respectively, a third adhesive composition may be used.

Next, the fourth adhesive composition contains 0.5 to 1.5 parts by weight of a crosslinking agent, 0.5 to 1.5 parts by weight of an anchorage additive, and 0.5 to 1.5 parts by weight of a crosslinking agent with respect to 100 parts by weight of a third adhesive agent in which the first and second subjects are mixed in a ratio of 95:1 to 99:1. 0.5 to 1.5 parts by weight of a catalyst may be included. Here, the crosslinking agent, the anchorage additive and the catalyst may be the same as those described above. When the first adhesive layer 120 and the second adhesive layer 220 are formed to have a thickness in a range of 550 μm to 700 μm and a thickness in a range of 40 μm to 50 μm, respectively, the fourth adhesive composition may be used.

Specifically, in the third adhesive subject, the first subject is xylene, trimethylated silica, ethylbenzene and siloxane with silicone, di-methyl, vinyl group-terminated (Siloxanes and Silicones). , di-Me, vinyl group-terminated; CAS No. 68083-19-2) may include a mixture mixed in a predetermined ratio. Here, xylene may be used as a solvent, and siloxane and silicone, di-methyl, and vinyl group-terminated may be a dimethylsiloxane copolymer. More specifically, throughout the first subject, xylene in a proportion ranging from 29% to 37%, trimethylated silica in a proportion ranging from 29% to 34%, ethylbenzene in a proportion ranging from 9% to 11%, siloxane and silicone , di-methyl, vinyl-terminated may each account for a proportion ranging from 21% to 24%.

In the third adhesive agent, the second agent may play a role in controlling the adhesive force, and siloxanes and silicones, di-Me, vinyl group-terminated (Siloxanes and Silicones, di-Me, vinyl group-terminated; CAS No. 68083-19-2) and 1-ethynylcyclohexanol (1-Ethynylcyclohexanol; CAS No. 78-27-3) may include a mixture mixed in a predetermined ratio. Here, 1-ethynylcyclohexanol may serve to control the curing rate, and siloxane and silicone, di-methyl, and vinyl group-terminated may be a dimethylsiloxane copolymer. More specifically, throughout the second subject, siloxane and silicone, di-methyl, and vinyl-terminated may account for a proportion in the range of 99% to 99.9%, and 1-ethynylcyclohexanol in the range of 0.1% to 1% may occupy a proportion of

Next, the fifth adhesive composition may include 0.5 to 3 parts by weight of a polymerization initiator based on 100 parts by weight of the fourth adhesive agent in which the third and fourth agents are mixed in a ratio of 50:50 to 80:20. For example, the fifth thickness may be in the range of 20 μm to 40 μm. When the first adhesive layer 120 and the second adhesive layer 220 are formed to have a thickness in a range of 250 μm to 550 μm and a thickness in a range of 20 μm to 40 μm, respectively, the fifth adhesive composition may be used.

Specifically, in the fourth adhesion subject, the third subject is a hydroxyl-terminated reaction product of xylene, ethylbenzene, toluene, and siloxane with silicone, di-methyl, and chlorotrimethylsilane, hydrochloric acid , isopropyl alcohol and sodium silicate (Siloxanes and silicones, di-Me, hydroxy-terminated reaction products with chlorotrimethylsilane, hydrochloric acid, iso-Pr alc. and sodium silicate; CAS No. 68440-70-0) in a predetermined ratio mixed mixtures may be included. Here, the hydroxyl-terminated reaction product of siloxane and silicone, di-methyl, and chlorotrimethylsilane, hydrochloric acid, isopropyl alcohol, and sodium silicate is a reaction product in which trimethylated silica and dimethylsiloxane copolymer are combined in a pre-crosslinked form. can More specifically, throughout the first subject, xylene in a proportion ranging from 30% to 40%, ethylbenzene in a proportion ranging from 2.5% to 10%, toluene in a proportion ranging from 0.1% to 0.25%, siloxane and silicone, di- Methyl, hydroxy-terminated reaction products of chlorotrimethylsilane, hydrochloric acid, isopropyl alcohol and sodium silicate may each account for a proportion in the range of 50% to 60%.

In the fourth adhesive agent, the fourth agent can play a role in controlling adhesion, and toluene, siloxane and silicone, di-methyl, hydroxy-terminated (Siloxanes and Silicones, di-Me, hydroxy-terminated) ; CAS No. 70131-67-8), xylene, trimethylated silica, and ethylbenzene may include a mixture in a predetermined ratio. Here, toluene and xylene may be used as solvents, and siloxane and silicone, di-methyl, and hydroxy-terminated may be dimethylsiloxane copolymers. More specifically, throughout the second subject, toluene in a proportion ranging from 70% to 80%, siloxane and silicone, di-methyl, hydroxy-terminated in a proportion ranging from 10% to 20%, and xylene ranging from 1% to 10% %, trimethylated silica in the range of 1% to 10%, and ethylbenzene in the range of 0.25% to 1%, respectively.

The polymerization initiator refers to a material that causes a chain polymerization reaction, and benzoyl peroxide may be used.

Next, the sixth adhesive composition may include 0.5 to 3 parts by weight of a polymerization initiator based on 100 parts by weight of the fifth adhesive agent in which the third and fifth agents are mixed in a ratio of 50:50 to 80:20. As the polymerization initiator, benzoyl peroxide may be used. When the first adhesive layer 120 and the second adhesive layer 220 are formed to have a thickness in a range of 250 μm to 550 μm and a thickness in a range of 20 μm to 40 μm, respectively, a sixth adhesive composition may be used.

Specifically, in the fifth adhesion subject, the third subject is a hydroxyl-terminated reaction product of xylene, ethylbenzene, toluene, and siloxane with silicone, di-methyl, and chlorotrimethylsilane, hydrochloric acid , isopropyl alcohol and sodium silicate (Siloxanes and silicones, di-Me, hydroxy-terminated reaction products with chlorotrimethylsilane, hydrochloric acid, iso-Pr alc. and sodium silicate) may include a mixture mixed in a predetermined ratio. Here, the hydroxyl-terminated reaction product of siloxane and silicone, di-methyl, and chlorotrimethylsilane, hydrochloric acid, isopropyl alcohol, and sodium silicate is a reaction product in which trimethylated silica and dimethylsiloxane copolymer are combined in a pre-crosslinked form. can More specifically, throughout the third subject, xylene in a proportion ranging from 30% to 40%, ethylbenzene in a proportion ranging from 2.5% to 10%, toluene in a proportion ranging from 0.1% to 0.25%, siloxane and silicone, di- Methyl, hydroxy-terminated reaction products of chlorotrimethylsilane, hydrochloric acid, isopropyl alcohol and sodium silicate may each account for a proportion in the range of 50% to 60%.

In the fifth adhesive subject, the fifth subject can play a role in controlling the adhesion, and toluene, siloxane and silicone, di-methyl, methyl vinyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, Me vinyl, vinyl groupterminated; CAS No. 68083-18-1), xylene, trimethylated silica, ethylbenzene, siloxane and silicone, di-methyl, methylvinyl, hydroxy -terminated (Siloxanes and Silicones, di-Me, Me vinyl, hydroxy-terminated; CAS No. 67923-19-7) and 1-Ethynylcyclohexanol (CAS No. 78-27-3) It may contain a mixture mixed in this predetermined ratio. Here, siloxane and silicone, di-methyl, methylvinyl, vinyl group-terminated and siloxane and silicone, di-methyl, methylvinyl, and hydroxy-terminated may be dimethylsiloxane copolymers. More specifically, toluene has a proportion in the range of 47% to 63%, siloxane and silicone, di-methyl, methylvinyl, vinyl-terminated in a proportion ranging from 21% to 31%, and xylene in a proportion ranging from 2.3% to 3.1% ratio of trimethylated silica ranging from 10% to 14%, ethylbenzene ranging from 0.44% to 0.6%, siloxane and silicone, di-methyl, methylvinyl, hydroxy-terminated from 2.2% to 3 %, 1-ethynylcyclohexanol may each account for a proportion ranging from 0.14% to 0.18%.

The adhesive tape 10 according to the first embodiment may include a release film 300 attached to the second adhesive layer 220 . The release film 300 may facilitate storage and transport of the adhesive tape 10 , and may serve to protect the second adhesive layer 220 before the semiconductor package 400 manufacturing process. The release film 300 may contain fluorine to protect the silicone-containing second adhesive layer 220 and to facilitate separation from the second adhesive layer 220, and the adhesive strength in the range of 3 gf/25mm to 8 gf/25mm can have When the adhesive force of the release film 300 is less than 3 gf/25mm, there is a risk that the release film 300 is naturally peeled off, and when it exceeds 8 gf/25mm, the release film 300 is removed from the adhesive tape 10 In the process, the adhesive tape 10 may be damaged, or it may be difficult to remove the release film 300 .

As described above, the adhesive tape 10 for the semiconductor package 400 manufacturing process according to the first embodiment is a first base film 110 , a first adhesive layer 120 , a second base film 210 , and a second Since the adhesive layer 220 has a very simple structure in which it is sequentially stacked, productivity and price competitiveness can be improved.

In addition, since the first base film 110 includes a single layer of any one selected from the group consisting of polyethylene terephthalate (PET), polyimide (PI), and polyolefin (PO) or a multilayer in which two or more are stacked, EMI shielding It is possible to easily secure the stress characteristics required in the adhesive tape 10 for the semiconductor package 400 manufacturing process used in the layer forming process.

In addition, when the first base film 110 including a polymer material is composed of a polymer material, as the surface treatment is performed on one surface of the first base film 110 in contact with the first adhesive layer 120 , the first adhesive layer Even if a silicone material is used as (120), the adhesion between them can be improved.

In addition, since the first base film 110 including the polymer material has a thickness in the range of 10 μm to 150 μm, the stress balance is effectively balanced in response to the topology of the lower surface of the semiconductor package 400 in which the plurality of protruding electrodes 410 are formed. There is an advantage in that it is easy to handle the adhesive tape 10 while maintaining it.

In addition, since the second base film 210 is deformed to correspond to the topology of the lower surface of the semiconductor package 400 and contains metal elements to independently maintain the deformed form between processes, it is used during the EMI shielding layer forming process. It is possible to easily secure the adhesive properties and retention properties required in the adhesive tape 10 for the semiconductor package 400 manufacturing process. In addition, when the first base film 110 contains the same metal element as the second base film 210 , the above-described adhesive properties and retention properties can be more easily secured.

In addition, since the second base film 210 containing the metal element has a very thin thickness in the range of 10 μm to 35 μm, the stress balance corresponds to the topology of the bottom surface of the semiconductor package 400 in which the plurality of protruding electrodes 410 are formed. can be effectively maintained.

In addition, by implementing molecular structure continuity between the first adhesive layer 120 and the second adhesive layer 220 through the plurality of perforations 212 formed in the second base film 210, the lower surface of the semiconductor package 400 and the protrusion Even if a void occurs between the semiconductor package 400 and the adhesive tape 10 in the region where the electrode 410 contacts, excessive expansion of the void between processes (particularly, during a process in a high vacuum environment) can be prevented.

In addition, since each of the first adhesive layer 120 and the second adhesive layer 220 includes an adhesive agent in which trimethylated silica, dimethylsiloxane copolymer, and ethylbenzene are mixed, physical property deformation due to heat generated during the EMI shielding layer forming process There is no such thing, and it is possible to easily secure the adhesive properties, holding properties, separation properties and stress properties required in the adhesive tape 10 for the semiconductor package 400 manufacturing process.

In addition, since each of the first adhesive layer 120 and the second adhesive layer 220 has a helical network structure based on a siloxane bond as a basic skeleton, the semiconductor package ( Even if a gap is generated between 400 ) and the adhesive tape 10 , it is possible to prevent excessive expansion of the gap between processes (particularly, during a process in a high vacuum environment).

In addition, since the second adhesive layer 220 has a very thin thickness in the range of 10 µm to 50 µm, adhesion and adhesion are easy according to the bottom topology of the semiconductor package 400 in which the plurality of protruding electrodes 410 are formed, and when attached A phenomenon in which the second adhesive layer 220 is pushed up to the side of the edge of the semiconductor package 400 may be prevented.

In addition, the thickness of each of the first adhesive layer 120 and the second adhesive layer 220 and the first base film 110 and the second base film optimized to correspond to the size and spacing of the protruding electrodes 410 of the semiconductor package 400 . (210) By providing each thickness, it is possible to more effectively secure the adhesive properties, retention properties, separation properties and stress properties required in the adhesive tape 10 for the semiconductor package 400 manufacturing process used in the EMI shielding layer forming process. can

In addition, since the consumption of process staff and consumables can be reduced compared to the conventional process for forming the EMI shielding layer of the semiconductor package 400 , the productivity of the semiconductor package 400 can be improved.

For reference, looking at the conventional semiconductor package 400 EMI shielding layer forming process, the size of the protruding electrodes 410 is larger than the size of the protruding electrodes 410 so that the plurality of protruding electrodes 410 are impregnated on the semiconductor wafer on which the plurality of protruding electrodes 410 are formed. After attaching a thick UV curing tape having a thickness, UV irradiation is performed to control the adhesion of the UV curing tape. Then, after attaching the dicing tape again on the UV curing tape, sawing is performed along with the semiconductor wafer to the UV curing tape to separate each individual die, that is, the semiconductor package 400 . That is, when the sawing process is completed, the thick UV curing tape is attached. Then, after fixing the single-sided adhesive heat resistant tape (or carrier tape) to a separate frame, each individual semiconductor package 400 separated from the dicing tape is separated from the dicing tape so that the UV curing tape is in contact with the adhesive surface of the heat resistant tape at approximately 2 mm intervals. After adhesion, pre-baking is performed to remove impurities remaining in the UV curing tape. In this case, the impurity refers to a material outgassed from the UV curing tape in a process environment for subsequent EMI shielding layer deposition, that is, in a high temperature and high vacuum environment, because the UV curing tape is based on an acrylic polymer. Pre-baking is a process for removing these impurities in advance. Next, after the EMI shielding layer deposition process, that is, sputtering process, is performed with the semiconductor package 400 attached to the heat-resistant tape, a plurality of protruding electrodes 410 are removed using a vacuum chuck or lift pin provided in an automated facility. A series of processes of removing the UV curing tape and the heat resistant tape attached to the lower surface of the formed semiconductor package 400 are performed.

On the other hand, looking at the process of forming the EMI shielding layer of the semiconductor package 400 using the adhesive tape 10 according to the first embodiment described above, the opposite surface of the semiconductor wafer having the plurality of protruding electrodes 410 formed on one surface (that is, After attaching the dicing tape to the side opposite to one side), sawing is performed only on the semiconductor wafer to separate each individual die, that is, the semiconductor package 400 . Then, after fixing the adhesive tape 10 according to the embodiment of the present invention to a separate frame, each individual semiconductor package ( 400) at approximately 2mm intervals. Next, after the EMI shielding layer deposition process, that is, sputtering process, is performed with the semiconductor package 400 attached to the adhesive tape 10, a plurality of protruding electrodes ( A series of processes of removing the adhesive tape 10 attached to the lower surface of the semiconductor package 400 on which the 410 is formed is performed.

That is, as described above, the semiconductor package 400 EMI shielding layer forming process using the adhesive tape 10 according to the first embodiment of the present invention does not require a conventional UV curing tape, so consumption of consumables is reduced. It is possible to reduce the cost by reducing it, and since the pre-baking process can be omitted, the process staff can be reduced.

4 is a diagram schematically illustrating a cross-section of an adhesive tape for a semiconductor package manufacturing process according to a second embodiment of the present invention. Hereinafter, for convenience of description, the same reference numerals are used for the same components as those of the first embodiment, and detailed descriptions thereof will be omitted.

4, the adhesive tape 20 for the semiconductor package 400 manufacturing process according to the second embodiment of the present invention is a first base film 110, a first intermediate layer 130, a first adhesive layer ( 120), the second base film 210, the second intermediate layer 230, the second adhesive layer 220, and the release film 300 may have a sequentially stacked structure. Here, the first base film 110, the first adhesive layer 120, the second base film 210, the second adhesive layer 220, and the release film 300 have the same configuration as the first embodiment described above, A detailed description will be omitted. In addition, the base film to be described later may refer to both the first base film 110 and the second base film 210 , and the adhesive layer may refer to both the first adhesive layer 120 and the second adhesive layer 220 . .

Each of the first intermediate layer 130 and the second intermediate layer 230 is an intermediate material inserted between the base film and the adhesive layer made of different materials, and may serve to improve adhesion between the base film and the adhesive layer. Therefore, each of the first intermediate layer 130 and the second intermediate layer 230 may use an adhesive composition having excellent physical and chemical bonding strength with both a base film including a polymer material or a metal material and an adhesive layer containing silicon.

Specifically, the adhesive composition used for each of the first intermediate layer 130 and the second intermediate layer 230 has the same molecular structure as the first adhesive layer 120 and the second adhesive layer 220. It may have a helical network structure, It may contain silicone. More specifically, the adhesive composition used for each of the first intermediate layer 130 and the second intermediate layer 230 is toluene, siloxane and silicone, di-methyl, hydroxy-terminated (Siloxanes and Silicones, di-Me). , hydroxy-terminated; CAS No. 70131-67-8), a primer mixture in which xylene, trimethylated silica and ethylbenzene are mixed may be used. wherein, throughout the primer mixture, toluene in a proportion ranging from 70% to 80%, siloxane and silicone, di-methyl, hydroxy-terminated in a proportion ranging from 10% to 20%, and xylene ranging from 1% to 2.5% The proportion, trimethylated silica may occupy a proportion ranging from 1% to 10%, and ethylbenzene may occupy a proportion ranging from 0.25% to 1%, respectively.

Each of the first intermediate layer 130 and the second intermediate layer 230 may have a basis weight in the range of ^{0.2 g/m 2} to 0.5 g/m ^{2 on the base film.} When the basis weight of each of the first intermediate layer 130 and the second intermediate layer 230 is ^{less than 0.2 g/m 2} , it may not be possible to provide sufficient adhesion to each of the base film and the adhesive layer, and when it exceeds ^{0.5 g/m 2 ,} When the adhesive tape 20 is removed, a defect in which the base film and the adhesive layer are separated based on the first intermediate layer 130 and the second intermediate layer 230 may occur.

As described above, the adhesive tape 20 according to the second embodiment of the present invention further includes the first intermediate layer 130 and the second intermediate layer 230, so that even if a silicone material is used as the adhesive layer, between the base film and the adhesive layer. adhesion can be further improved.

5 is a flowchart for explaining a manufacturing process of an adhesive tape for a semiconductor package manufacturing process according to an embodiment of the present invention, and FIG. 6 is a first tape and a second adhesive tape for a semiconductor package manufacturing process according to an embodiment of the present invention. It is a flowchart for explaining the manufacturing process of the tape. Hereinafter, for convenience of description, an example of a method of manufacturing the adhesive tape according to the first embodiment shown in FIG. 1 will be described. Accordingly, the same reference numerals are used for the same components as those of the above-described first embodiment, and detailed descriptions thereof will be omitted.

First, as shown in FIG. 5 , a first tape 100 in which a first base film 110 , a first adhesive layer 120 , and a first release film are sequentially stacked is manufactured.

The first base film 110 may include a polymer material or a metal material. When the first base film 110 includes a polymer material, the first base film 110 may have a thickness in the range of 10 μm to 150 μm, and one surface in contact with the first adhesive layer 120 is surface-treated. can On the other hand, when the first base film 110 includes a metal material, the first base film 110 may have a thickness in the range of 10 μm to 35 μm. Any one or two or more selected from the group consisting of polyethylene terephthalate (PET), polyimide (PI) and polyolefin (PO) may be used as the polymer material, and aluminum (Al) or copper (Cu) may be used as the metal material. A metal film containing 99 wt% or more may be used.

The first adhesive layer 120 may be made of a silicon material, and the molecular structure may have a helical network structure. The first adhesive layer 120 may have a thickness in a range of 80 μm to 120 μm and an adhesive strength in a range of 500 gf/25 mm to 1500 gf/25 mm. The first adhesive layer 120 may include an adhesive agent in which trimethylated silica, dimethyl siloxane copolymer, and ethylbenzene are mixed. In addition, the first adhesive layer 120 may be a single layer composed of any one of the above-described first to sixth adhesive compositions, or may have a multilayer structure in which two or more are stacked.

The first release film 300 may contain fluorine, and may have an adhesive force in the range of 3 gf/25mm to 8 gf/25mm.

Next, a second tape 200 in which the second base film 210 , the second adhesive layer 220 and the second release film 300 are sequentially stacked is manufactured.

The second base film 210 may include a metal material and may have a thickness in the range of 10 μm to 35 μm. As a metal material, a metal film containing 99 wt% or more of aluminum (Al) or copper (Cu) may be used.

The second adhesive layer 220 may be made of a silicon material, and the molecular structure may have a helical network structure. The second adhesive layer 220 may have a thickness in a range of 10 μm to 50 μm and an adhesive strength in a range of 200 gf/25 mm to 300 gf/25 mm. The second adhesive layer 220 may include an adhesive agent in which trimethylated silica, dimethyl siloxane copolymer, and ethylbenzene are mixed. In addition, the second adhesive layer 220 may be a single layer composed of any one of the above-described first adhesive composition to the sixth adhesive composition, or may have a multilayer structure in which two or more are stacked.

The second release film 300 may contain fluorine, and may have an adhesive strength in the range of 3 gf/25mm to 8 gf/25mm.

As described above, the first tape 100 and the second tape 200 may be manufactured through separate separate processes. A method of manufacturing the first tape 100 and the second tape 200 will be described later with reference to FIG. 6 .

Next, after removing the first release film 300 from the first tape 100 immediately before the semiconductor package 400 manufacturing process, the first adhesive layer 120 and the second base film 210 are laminated so that they are in contact with each other. An adhesive tape 10 is prepared.

Subsequently, a subsequent process, for example, an EMI shielding layer forming process, may be performed using the adhesive tape 10 manufactured at the site in which the semiconductor package 400 manufacturing process is performed.

As described above, in the present invention, the first tape 100 and the second tape 200 are manufactured through separate processes, respectively, and the first tape 100 and the second tape 200 are manufactured at the site where the semiconductor package 400 manufacturing process is performed. By laminating the two tapes 200 to produce the adhesive tape 10, transport and storage of each of the first tape 100 and the second tape 200 is easy, and the adhesive tape 10 is removed during the transport and storage process. Damage can be fundamentally prevented, and the yield can be improved as the process proceeds by using the high-quality adhesive tape 10 .

Next, a method of manufacturing the first tape 100 and the second tape 200 will be described in detail with reference to FIG. 6 . Hereinafter, an example of a method of manufacturing the second tape 200 will be described for convenience of description. That is, the first tape 100 may be manufactured in the same manner as the manufacturing method of the second tape 200 to be described later.

First, as shown in FIG. 6 , a second base film 210 is prepared. The second base film 210 may contain 99 wt% or more of aluminum or copper. In this case, the second base film 210 may have a thickness in the range of 10 μm to 35 μm.

Next, an adhesive composition for forming the second adhesive layer 220 is prepared. The adhesive composition may be formed by injecting and mixing predetermined materials in a mixing container at a predetermined ratio. For example, 0.5 to 1.5 parts by weight of a crosslinking agent, 0.5 to 1.5 parts by weight of an anchorage additive based on 100 parts by weight of an adhesive agent in which trimethylated silica, dimethyl siloxane copolymer and ethylbenzene are mixed The adhesive composition may be prepared by mixing 0.5 to 1.8 parts by weight of the catalyst and parts.

Next, the prepared adhesive composition is stabilized. The stabilization of the adhesive composition is intended to remove air bubbles in the adhesive composition and at the same time induce chemical stability and an even polymerization reaction of the adhesive composition. Specifically, for stabilization of the adhesive composition, the prepared adhesive composition may be rested in thermal equilibrium for 4 to 12 hours. In general, ultrasonic treatment or vacuum suction is performed to remove air bubbles in the adhesive composition, but since the adhesive composition according to an embodiment of the present invention contains a silicone component, chemical stability is secured and a rapid polymerization reaction is prevented. It is preferable to proceed in a state of thermal equilibrium. For reference, the thermal equilibrium state may refer to a stabilized state in which no external stimulus or external force acts.

Next, the second adhesive layer 220 is formed by applying the stabilized adhesive composition on the second base film 210 using a comma coater. At this time, the comma coater may apply the adhesive composition on the second base film 210 to be thicker than the target thickness (ie, the final thickness) of the second adhesive layer 220 . Specifically, the comma coater may apply the adhesive composition 2.5 times to 3.5 times thicker than the target thickness of the second adhesive layer 220 . For example, when the target thickness of the second adhesive layer 220 is 30 μm, the comma coater may apply the adhesive composition to have a thickness in the range of 75 μm to 105 μm. As will be described later, the thickness of the second adhesive layer 220 may be gradually reduced to reach a target thickness in the subsequent drying heat treatment and curing process.

Meanwhile, in the present embodiment, the case of forming the second adhesive layer 220 using a comma coater is exemplified, but since the second adhesive layer 220 has a thin thickness, various known process methods can be used. As a modification, the second adhesive layer 220 may be formed through a spin coating method or a spray method.

Next, a primary dry heat treatment for the second adhesive layer 220 is performed. The primary drying heat treatment is to remove the solvent in the adhesive composition and activate the polymerization reaction at the same time, and may be performed using an infrared lamp, and may be performed at a temperature in the range of 60°C to 80°C for 3 minutes to 6 minutes.

Next, the secondary dry heat treatment is performed on the second adhesive layer 220 in succession to the first dry heat treatment. The secondary drying heat treatment is for activating the polymerization reaction while removing the solvent in the adhesive composition like the first drying heat treatment, and may be performed using an infrared lamp. The secondary dry heat treatment may be performed at a higher temperature than the primary dry heat treatment, and may be performed for the same time as the primary dry heat treatment. For example, the secondary drying heat treatment may be performed at a temperature in the range of 160°C to 180°C for 3 minutes to 6 minutes.

Next, a tertiary dry heat treatment is performed on the second adhesive layer 220 in succession to the second dry heat treatment. The tertiary drying heat treatment is for activating the polymerization reaction while removing the solvent in the adhesive composition as in the first and second drying heat treatment, and may be performed using an infrared lamp. The tertiary dry heat treatment may be performed at a higher temperature than the second dry heat treatment, and may be performed for a longer time than the second dry heat treatment. For example, the tertiary dry heat treatment may be performed at a temperature in the range of 190°C to 210°C for 9 minutes to 18 minutes.

Next, the second adhesive layer 220 is cured and stabilized at room temperature for 12 to 24 hours. That is, the polymerization reaction in the second adhesive layer 220 is stably finished through a rest period that slowly cools the second base film 210 and the second adhesive layer 220 heated in the first to third dry heat treatment process to room temperature. At the same time, the second adhesive layer 220 may be cured to have a required hardness.

Here, drying the second adhesive layer 220 while increasing the temperature stepwise in the primary to tertiary dry heat treatment process is to prevent the second adhesive layer 220 from drying and curing from the surface, through which the second Air bubbles in the adhesive layer 220 may be easily removed. In addition, after the tertiary dry heat treatment is performed, the second adhesive layer 220 having a more stable state and an even thickness can be realized by gradually decreasing the temperature to room temperature.

When the above-described primary to tertiary dry heat treatment and stabilization at room temperature are completed, the second adhesive layer 220 may have a target thickness.

Next, a second release film 300 containing fluorine is attached on the second adhesive layer 220 . The release film 300 may contain fluorine for easy protection and separation of the silicone-containing second adhesive layer 220 , and may have an adhesive strength in the range of 3 gf/25mm to 8 gf/25mm.

The second tape 200 may be completed through the above-described process process. In addition, as described above, the first tape 100 may be manufactured in the same manner as the manufacturing method of the second tape 200 .

The embodiments described in this specification and the accompanying drawings are merely illustrative of some of the technical ideas included in the present invention. Therefore, since the embodiments disclosed in the present specification are for explanation rather than limitation of the technical spirit of the present invention, it is obvious that the scope of the technical spirit of the present invention is not limited by these embodiments. Modifications and specific embodiments that can be easily inferred by those skilled in the art within the scope of the technical idea included in the specification and drawings of the present invention should be interpreted as being included in the scope of the present invention.

10, 20: adhesive tape 100: first tape
110: first base film 120: first adhesive layer
130: first intermediate layer 200: second tape
210: second base film 212: perforation
220: second adhesive layer 230: second intermediate layer
300: (second) release film 400: semiconductor package
410: protruding electrode

Claims (20)

An adhesive tape for a semiconductor package manufacturing process attached to a lower surface of a semiconductor package having a plurality of protruding electrodes formed thereon, the adhesive tape comprising:
A first adhesive layer formed on the first base film;
a second base film formed on the first adhesive layer, the shape of which is deformed to correspond to the topology of the bottom surface of the semiconductor package when the bottom surface of the semiconductor package is attached, and containing metal elements to independently maintain the deformed shape between processes; and
A second adhesive layer formed on the second base film, having a thickness thinner than the first adhesive layer, and having an adhesive force smaller than that of the first adhesive layer,
Each of the first adhesive layer and the second adhesive layer has a helical network structure and includes a first adhesive composition containing silicon,
The first adhesive composition is an adhesive tape comprising an adhesive agent in which trimethylated silica, dimethyl siloxane copolymer, and ethylbenzene are mixed.
delete According to claim 1,
a first intermediate layer inserted between the first base film and the first adhesive layer; and
Further comprising a second intermediate layer inserted between the second base film and the second adhesive layer,
Each of the first intermediate layer and the second intermediate layer has a helical network structure, contains a second adhesive composition containing silicone, and has a basis weight in the range of ^{0.2 g/m 2} to 0.5 g/m ^{2 Adhesive tape} .
4. The method of claim 3,
The second adhesive composition is toluene, siloxane and silicone, di-methyl, hydroxy-terminated (Siloxanes and Silicones, di-Me, hydroxy-terminated; CAS No. 70131-67-8), xylene ( Xylene), an adhesive tape comprising a mixture of trimethylated silica and ethylbenzene.
According to claim 1,
The first base film has a single layer or a multilayer structure in which two or more selected from the group consisting of polyethylene terephthalate (PET), polyimide (PI) and polyolefin (PO), and ranges from 10 μm to 150 μm. adhesive tape having a thickness of .
6. The method of claim 5,
The first base film is an adhesive tape in which the surface in contact with the first adhesive layer is surface-treated using a corona discharge treatment method or an ion-assisted reaction method.
According to claim 1,
The first base film is deformed to correspond to the topology of the lower surface of the semiconductor package when the lower surface of the semiconductor package is attached, and a metal element is contained to independently maintain the deformed form between processes.
8. The method of claim 7,
Each of the first base film and the second base film contains at least 99 wt% of aluminum (Al), and each of the first base film and the second base film containing aluminum is 6 kgf/mm ² to 12 kgf Adhesive tape having a tensile strength in the range of /mm ² and an elongation in the range of 8% to 16%, and a thickness in the range of 10 μm to 35 μm.
8. The method of claim 7,
Each of the first base film and the second base film contains at least 99 wt% of copper (Cu), and each of the first base film and the second base film containing copper is 10 kgf/mm ² to 26 kgf Adhesive tape having a tensile strength in the range of /mm ² and an elongation in the range of 4% to 12%, and a thickness in the range of 10 μm to 35 μm.
According to claim 1,
The second base film has a thickness in the range of 10 μm to 35 μm, and as the size of the protruding electrodes increases, the thickness of the second base film decreases within a set thickness range, and as the distance between the protruding electrodes increases, the thickness of the second base film decreases. An adhesive tape in which the thickness of the second base film increases within a set thickness range.
According to claim 1,
The second base film is regularly arranged and includes a plurality of perforations penetrating the second base film, wherein each of the plurality of perforations has any one planar shape selected from the group consisting of a triangle or more polygonal, oval or circular shape. and an adhesive tape in which the first adhesive layer and the second adhesive layer are in direct contact through the plurality of perforations.
delete According to claim 1,
The first adhesive layer has a thickness in the range of 100 μm to 700 μm, and as the size of the protruding electrodes increases, the thickness of the first adhesive layer decreases within a set thickness range, and as the distance between the protruding electrodes increases, the set thickness The thickness of the first adhesive layer increases within the range,
The second adhesive layer has a thickness in the range of 10 μm to 50 μm, and as the size of the protruding electrodes increases, the thickness of the second adhesive layer increases within a set thickness range, and as the distance between the protruding electrodes increases, the set thickness An adhesive tape in which the thickness of the second adhesive layer is reduced within the range.
delete According to claim 1,
The first adhesive composition further comprises 0.5 to 1.5 parts by weight of a crosslinking agent, 0.5 to 1.5 parts by weight of an anchorage additive, and 0.5 to 1.8 parts by weight of a catalyst based on 100 parts by weight of the adhesive agent,
The adhesive agent is xylene, trimethylated silica, ethylbenzene and siloxane with silicone, di-methyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, vinyl group- An adhesive tape comprising a mixture of terminated; CAS No. 68083-19-2).
According to claim 1,
The first adhesive composition contains 0.5 to 1.5 parts by weight of a crosslinking agent, 0.5 to 1.5 parts by weight of an anchorage additive, and 0.5 to 1.5 parts by weight of a catalyst based on 100 parts by weight of the adhesive agent in which the first and second subjects are mixed in a ratio of 95:5 to 99:1. 1.5 parts by weight further,
The first subject is xylene, trimethylated silica, ethylbenzene and siloxane with silicone, di-methyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, vinyl group) -terminated; includes a mixture of CAS No. 68083-19-2);
The second subject is siloxanes and silicones, di-methyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, vinyl group-terminated; CAS No. 68083-19-2) and 1-ethynylcyclohexanol ( Adhesive tape containing a mixture of 1-Ethynylcyclohexanol; CAS No. 78-27-3).
17. The method of claim 15 or 16,
The crosslinking agent includes a mixture of heptane and siloxane, silicone, and methyl hydrogen (Siloxanes and Silicones, Me hydrogen; CAS No. 63148-57-2),
The anchorage additive is trimethoxy[3-(oxiranylmethoxy)propyl]silane (Silane, trimethoxy[3-(oxiranylmethoxy)propyl]-; CAS No. 2530-83-8), trimethoxy[(3- Siloxanes and silicones combined with oxiranylmethoxy)propyl]silane, di-methyl, di-vinyl, and hydroxy-terminated reaction products (Siloxanes and Silicones, di-Me, Me vinyl, hydroxy-terminated reaction products with trimethoxy[3-oxiranylmethoxy)propyl]silane; CAS No. 102782-94-5), methanol and divinyl hexamethyl cyclotetrasiloxane (CAS No. 17980-61-9) are mixed;
The catalyst is platinum, 1,3-diethenyl-1,1,3,3-tetramethyldisiloxane complexes (Platinium 1,3-diethenyl-1,1,3,3-tetramethyldisiloxane complexes; CAS No. 68478- 92-2), Siloxanes and Silicones, di-Me, vinyl group-terminated (CAS No. 68083-19-2), Tetramethyldivinyldisiloxane ; CAS No. 2627-95-4) and mixtures of siloxanes with silicones, di-methyl, hydroxy-terminated (Siloxanes and Silicones, di-Me, hydroxy-terminated; CAS No. 70131-67-8) Adhesive tape comprising a.
According to claim 1,
The first adhesive composition further comprises 0.5 to 3 parts by weight of a polymerization initiator based on 100 parts by weight of the adhesive agent in which the third and fourth subjects are mixed in a ratio of 50:50 to 80:20,
The third subject is the hydroxyl-terminated reaction product of xylene, ethylbenzene, toluene, and siloxane with silicon, di-methyl, and chlorotrimethylsilane, hydrochloric acid, isopropyl alcohol and sodium silicate. (Siloxanes and silicones, di-Me, hydroxy-terminated reaction products with chlorotrimethylsilane, hydrochloric acid, iso-Pr alc. and sodium silicate; CAS No. 68440-70-0)
The fourth subject is toluene, siloxane and silicone, di-methyl, hydroxy-terminated (Siloxanes and Silicones, di-Me, hydroxy-terminated; CAS No. 70131-67-8), xylene ), including a mixture of trimethylated silica and ethylbenzene,
The polymerization initiator is an adhesive tape containing benzoyl peroxide (Benzoyl Peroxide).
According to claim 1,
The first adhesive composition further comprises 0.5 to 3 parts by weight of a polymerization initiator based on 100 parts by weight of the adhesive agent in which the third and fifth subjects are mixed in a ratio of 50:50 to 80:20,
The third subject is the hydroxyl-terminated reaction product of xylene, ethylbenzene, toluene, and siloxane with silicon, di-methyl, and chlorotrimethylsilane, hydrochloric acid, isopropyl alcohol and sodium silicate. (Siloxanes and silicones, di-Me, hydroxy-terminated reaction products with chlorotrimethylsilane, hydrochloric acid, iso-Pr alc. and sodium silicate; CAS No. 68440-70-0)
The fifth subject is toluene, siloxane and silicone, di-methyl, methylvinyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, Me vinyl, vinyl groupterminated; CAS No. 68083-18-1) , Xylene, Trimethylated silica, Ethylbenzene, Siloxanes and Silicones, Di-methyl, Methylvinyl, Hydroxy-terminated (Siloxanes and Silicones, di-Me, Me vinyl, hydroxy-terminated; CAS No. 67923-19-7) and 1-ethynylcyclohexanol (1-Ethynylcyclohexanol; CAS No. 78-27-3) are mixed;
The polymerization initiator is an adhesive tape containing benzoyl peroxide (Benzoyl Peroxide).
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