KR102198323B1 - Adhesive tape for semicondoctor package manufacturing process and method for manufacturing the same - Google Patents

Abstract

The present technology can protect the lower surface of the semiconductor package and the plurality of protruding electrodes formed on the lower surface of the semiconductor package during the manufacturing process of a semiconductor package having a plurality of protruding electrodes, and can be easily removed from the semiconductor package after completing a predetermined manufacturing process. An adhesive tape for a semiconductor package manufacturing process that can be separated, comprising: an adhesive tape for a semiconductor package manufacturing process attached to a lower surface of a semiconductor package having a plurality of protruding electrodes formed thereon, comprising: a base layer having one surface treated; An adhesive layer formed on one surface of the base layer and containing silicon having a network structure; And it provides an adhesive tape comprising a release film containing fluorine adhered on the adhesive layer.

Description

Adhesive tape for semiconductor package manufacturing process and its manufacturing method {ADHESIVE TAPE FOR SEMICONDOCTOR PACKAGE MANUFACTURING PROCESS AND METHOD FOR MANUFACTURING THE SAME}

The present invention relates to an adhesive tape for a semiconductor package manufacturing process, and more particularly, to protect a plurality of protruding electrodes formed on a lower surface of a semiconductor package and a lower surface of a semiconductor package during the process of forming an EMI (Electro Magnetic Interference) shielding layer of a semiconductor package. The present invention relates to an adhesive tape for a semiconductor package manufacturing process and a method of manufacturing the same.

As a type of semiconductor package, BGA (Ball Grid Array) is widely used. BGA achieves external terminal contact of the semiconductor package by means of a solder ball, so instead of transmitting signals to one side, both sides, and four sides in a lead frame type package, a number of protruding electrodes exposed on the bottom surface, that is, solder balls, are replaced. It enabled more signal transmission. These BGA packages are being produced as the flagship packages of next-generation high-speed memory, and the use of CSP (Chip Scale Package), which was limited to portable information and communication devices such as mobile phones and digital cameras, has been expanded to the computer areas such as PCs and workstations. have.

On the other hand, in the mobile field, in order to increase the battery life, the demand to increase the size of the battery and the demand to reduce the size of the terminal at the same time meet the demand to relatively reduce the size of the PCB occupied by the terminal. If the size of the PCB is reduced, the gap between the semiconductor devices included in the PCB is narrowed, and errors due to electromagnetic interference between the semiconductor devices inevitably occur. In order to suppress electromagnetic interference between devices, a technology for forming a shielding metal coating on the outer surface of the device by a method of covering a device shielding cap (CAP) or an EMI sputtering technology has been developed and introduced.

Among them, the metal coating technology for shielding by sputtering refers to forming a metal thin film for shielding electromagnetic waves on the entire outer surface of the semiconductor device except for the connection terminal through a sputtering process. In the case of a BGA semiconductor package, it is a method of not affecting the connection terminals during the sputtering process for shielding electromagnetic waves.The method of applying sputtering by placing the semiconductor package in a tape with holes the size of a semiconductor package and exposing only the upper surface of the package ( Registration Patent No. 10-1662068) is disclosed, but not only incurs excessive cost to form a hole in the tape, but also a problem in that a thin film is poorly deposited by sputtering when the semiconductor package is not correctly placed in the hole. have.

Republic of Korea Patent Publication No. 10-1662068 (2016.10.04)

Accordingly, the present invention is to solve the conventional problem, for a semiconductor package manufacturing process capable of protecting the lower surface of the semiconductor package and the plurality of protruding electrodes formed on the lower surface of the semiconductor package during the manufacturing process of a semiconductor package having a plurality of protruding electrodes. An object thereof is to provide an adhesive tape and a method of manufacturing the same.

In addition, another object of the present invention is to provide an adhesive tape for a semiconductor package manufacturing process and a method for manufacturing the same that can be easily separated from a semiconductor package without residue after completing a predetermined manufacturing process.

The problem of the present invention is not limited to those mentioned above, and other problems that are not mentioned will be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention for achieving the objects of the present invention, in an adhesive tape for a semiconductor package manufacturing process including a plurality of protruding electrodes formed on a lower surface, used in a process of forming an Electro Magnetic Interference (EMI) shielding layer , The adhesive tape includes a base layer having a surface treatment on one side and an adhesive layer containing silicon formed on one side of the base layer and adhered to correspond to a bottom topology of the semiconductor package, and the adhesive layer has a molecular structure having a network structure. Including an adhesive composition, wherein the adhesive composition includes an adhesive subject in which trimethylated silica, a dimethyl siloxane copolymer, and ethylbenzene are mixed, and the adhesive composition is the first subject And the second subject contains 0.5 to 1.5 parts by weight of a crosslinking agent, 0.5 to 1.5 parts by weight of an anchorage additive, and 0.5 to 1.5 parts by weight of a catalyst based on 100 parts by weight of the adhesive agent mixed in a ratio of 95:5 to 99:1, and the first Topics include xylene, trimethylated silica, ethylbenzene, siloxanes and silicones, di-methyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, vinyl group-terminated) Contains a mixture of siloxane and silicon, di-methyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, vinyl group-terminated) and 1-ethynylcyclohexanol (1 -Ethynylcyclohexanol) is provided with an adhesive tape containing a mixture.
In the present invention, the adhesive layer may have a thickness in the range of 550 µm to 700 µm and an adhesive force in the range of 1800 gf/25mm to 2500 gf/25mm.
In the present invention, the crosslinking agent includes a mixture of heptane, siloxane, silicon, and methyl hydrogen (Siloxanes and Silicones, Me hydrogen), and the anchorage additive is trimethoxy[3-(oxiranylmethoxy )Propyl]silane (Silane, trimethoxy[3-(oxiranylmethoxy)propyl]-), trimethoxy[(3-oxiranylmethoxy)propyl] siloxanes and silicones bound to silane, di-methyl, di-vinyl , Hydroxy-terminated reaction products (Siloxanes and Silicones, di-Me, Me vinyl, hydroxyterminated reaction products with trimethoxy[3-oxiranylmethoxy)propyl]silane), methanol and divinylhexamethylcyclotetrasiloxane And the mixed mixture, wherein the catalyst is platinum, 1,3-diethenyl-1,1,3,3-tetramethyldisiloxane complex (Platinium 1,3-diethenyl-1,1,3,3- tetramethyldisiloxane complexes), siloxanes and silicones, di-methyl, siloxanes and silicones, di-Me, vinyl groupterminated, tetramethyldivinyldisiloxane and siloxanes and silicones, di-methyl, hydroxy -May contain a mixture of terminated (Siloxanes and Silicones, di-Me, hydroxy-terminated).
According to another aspect of the present invention for achieving the objects of the present invention, an adhesive tape for a semiconductor package manufacturing process including a plurality of protruding electrodes formed on a lower surface, used in a process of forming an Electro Magnetic Interference (EMI) shielding layer The adhesive tape includes a base layer having a surface-treated surface on one side and an adhesive layer containing silicon formed on one side of the base layer and adhered to correspond to a bottom topology of the semiconductor package, and the adhesive layer has a molecular structure of a network structure. Including an adhesive composition having a, wherein the adhesive composition comprises a trimethylated silica (Trimethylated silica), a dimethylsiloxane copolymer (Dimethyl Siloxane copolymer) and ethylbenzene (Ethylbenzene) is mixed with an adhesive topic, the adhesive composition The first subject and the second subject contain 0.5 to 3 parts by weight of a polymerization initiator based on 100 parts by weight of the adhesive subject mixed in a ratio of 50:50 to 80:20, and the first subject is xylene, ethylbenzene ), toluene and siloxane and silicone, di-methyl, and hydroxy-terminated reaction products of chlorotrimethylsilane, hydrochloric acid, isopropyl alcohol and sodium silicate (Siloxanes and silicones, di-Me, hydroxy-terminated reaction products with chlorotrimethylsilane, hydrochloric acid, iso-Pr alc. and sodium silicate), and the second subject is toluene, siloxane and silicone, di-methyl, hydroxy-terminated (Siloxanes and Silicones, di-Me, hydroxy-terminated), xylene (Xylene), trimethylated silica (Trimethylated silica), and a mixture of ethylbenzene (Ethylbenzene), the polymerization initiator is benzoyl peroxide (Benzoyl P eroxide) is provided.
According to another aspect of the present invention for achieving the objects of the present invention, an adhesive tape for a semiconductor package manufacturing process including a plurality of protruding electrodes formed on a lower surface, used in a process of forming an Electro Magnetic Interference (EMI) shielding layer The adhesive tape includes a base layer having a surface-treated surface on one side and an adhesive layer containing silicon formed on one side of the base layer and adhered to correspond to a bottom topology of the semiconductor package, and the adhesive layer has a molecular structure of a network structure. Including an adhesive composition having a, wherein the adhesive composition comprises a trimethylated silica (Trimethylated silica), a dimethylsiloxane copolymer (Dimethyl Siloxane copolymer) and ethylbenzene (Ethylbenzene) is mixed with an adhesive topic, the adhesive composition The first subject and the second subject contain 0.5 to 3 parts by weight of a polymerization initiator based on 100 parts by weight of the adhesive subject mixed in a ratio of 50:50 to 80:20, and the first subject is xylene, ethylbenzene ), toluene and siloxane and silicone, di-methyl, and hydroxy-terminated reaction products of chlorotrimethylsilane, hydrochloric acid, isopropyl alcohol and sodium silicate (Siloxanes and silicones, di-Me, hydroxy-terminated reaction products with chlorotrimethylsilane, hydrochloric acid, iso-Pr alc. and sodium silicate), and the second subject is toluene, siloxane and silicon, di-methyl, methylvinyl, vinyl group-terminated (Siloxanes). and Silicones, di-Me, Me vinyl, vinyl groupterminated), xylene, trimethylated silica, ethylbenzene, siloxane and silicone, di-methyl, methylvinyl, hydride It contains a mixture of oxy-terminated (Siloxanes and Silicones, di-Me, Me vinyl, hydroxy-terminated) and 1-Ethynylcyclohexanol, and the polymerization initiator is benzoyl peroxide (Benzoyl Peroxide). An adhesive tape comprising) is provided.
In the present invention, the adhesive layer may have a thickness ranging from 250 μm to 550 μm and an adhesive strength ranging from 1000 gf/25mm to 1300gf/25mm.

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The adhesive tape for a semiconductor package manufacturing process and a method of manufacturing the same according to the present invention provides the following effects.

Since the adhesive tape for a semiconductor package manufacturing process according to the present invention has a very simple structure in which a base layer and an adhesive layer are sequentially stacked, there is an effect of improving productivity and price competitiveness.

In addition, since the base layer includes a single layer selected from the group consisting of polyethylene terephthalate (PET), polyimide (PI), and polyolefin (PO), or a multilayer in which two or more are stacked, it is used in the process of forming an EMI shielding layer. There is an effect of easily securing the stress characteristics required in the adhesive tape for the semiconductor package manufacturing process.

In addition, since the base layer has a very thin thickness in the range of 10 μm to 30 μm, there is an effect of effectively maintaining a stress balance in response to the topology of the bottom surface of a semiconductor package in which a plurality of protruding electrodes are formed.

In addition, as the surface treatment is performed on one surface of the base layer in contact with the adhesive layer, even if a silicone material is used as the adhesive layer, there is an effect of improving the adhesion between the base layer and the adhesive layer.

In addition, since the adhesive layer contains an adhesive theme in which trimethylated silica, dimethylsiloxane copolymer, and ethylbenzene are mixed, there is no physical property modification due to heat generated during the EMI shielding layer formation process, and adhesion required in the adhesive tape for the semiconductor package manufacturing process. There is an effect of easily securing characteristics, retention characteristics, separation characteristics, and stress characteristics.

In addition, since the adhesive layer has a network structure with a siloxane bond as a basic skeleton, even if a void occurs between the semiconductor package and the adhesive tape in the area where the lower surface of the semiconductor package and the protruding electrode are in contact, between manufacturing processes (especially during processing in a high vacuum environment) ) It has the effect of preventing excessive expansion of the void.

In addition, by providing the adhesive composition of the adhesive layer optimized in response to the size of the protruding electrode of the semiconductor package, the adhesive characteristics, retention characteristics, separation characteristics and stress characteristics required in the adhesive tape for the semiconductor package manufacturing process used in the EMI shielding layer formation process. There is an effect that can be secured more effectively.

The effects of the present invention are not limited to those mentioned above, and other effects that are not mentioned will be clearly understood by those skilled in the art from the following description.

1 is a schematic view showing an adhesive tape for a semiconductor package manufacturing process according to an embodiment of the present invention.
2 is a diagram illustrating a shape in which an adhesive tape for a semiconductor package manufacturing process according to an embodiment of the present invention is adhered to a lower surface of a semiconductor package.
3 is a diagram schematically illustrating an adhesive tape for a semiconductor package manufacturing process according to another embodiment of the present invention.
4 is a flowchart illustrating a manufacturing process of an adhesive tape for manufacturing a semiconductor package according to an embodiment of the present invention.

Hereinafter, in order to describe in detail enough that a person skilled in the art can easily implement the technical idea of the present invention, a most preferred embodiment of the present invention will be described with reference to the drawings. The drawings are not necessarily drawn to scale, and in some examples, proportions of at least some of the structures shown in the drawings may be exaggerated in order to clearly show the characteristics of the embodiments. When a multi-layered structure having two or more layers is disclosed in the drawings or detailed description, the relative positional relationship or arrangement order of the layers as shown is only reflecting a specific embodiment, and the present invention is not limited thereto, and the relative positions of the layers Relationships or order of arrangement may vary. Further, the drawings or detailed description of a multilayer structure may not reflect all layers present in a particular multilayer structure (eg, there may be one or more additional layers between the two layers shown). For example, in the multilayer structure of the drawings or detailed description, when the first layer is on the second layer or on the substrate, it indicates that the first layer may be formed directly on the second layer or may be formed directly on the substrate. In addition, it may also represent a case in which one or more other layers exist between the first layer and the second layer or between the first layer and the substrate.

An embodiment of the present invention to be described later is to provide an adhesive tape for a semiconductor package manufacturing process, and more particularly, of a semiconductor package having a plurality of protruding electrodes such as a ball grid array (BGA) and a land grid array (LGA). The purpose of the present invention is to provide an adhesive tape for a semiconductor package capable of protecting a plurality of protruding electrodes formed on a lower surface of a semiconductor package and a plurality of protruding electrodes formed on the lower surface of a semiconductor package during a process of forming an Electro Magnetic Interference (EMI) shielding layer, and a manufacturing method thereof.

Typically, the adhesive tape for the semiconductor package manufacturing process used in the process of forming an EMI shielding layer needs to secure an adhesion characteristic, a retention characteristic, a remove characteristic, and a stress characteristic. There is this.

First, in terms of adhesive properties, the adhesive layer of the adhesive tape has a thickness larger than the size (eg, diameter or height) of the protruding electrode so that the protruding electrode can be impregnated, and at the same time, a process environment for forming the EMI shielding layer, such as In a high vacuum environment, the protruding electrode must be adhered well without being pushed out. In addition, adhesion and adhesion should be possible in correspondence with the topology of the bottom surface of the semiconductor package including the protruding electrode so that voids do not occur in the area where the bottom surface of the semiconductor package and the protruding electrode contact.

Next, looking at the retention characteristics, under the process conditions for forming the EMI shielding layer, it maintains its circular shape without self-denaturing, deformation, discoloration, and outgassing, and gas and particles between processes can be applied to adhesive tapes and semiconductors. It must be able to maintain adhesiveness and airtightness to prevent penetration between the adhesive surfaces of the package. In addition, when a void occurs in a region where the lower surface of the semiconductor package and the protruding electrode contact each other, it should be possible to prevent the void from excessively expanding between processes (especially during a process in a high vacuum environment).

Next, in terms of separation characteristics, when the adhesive tape is separated from the semiconductor package at room temperature and atmospheric pressure after completing the process of forming the EMI shielding layer, it is easily separated with little force, and at the same time, the lower surface of the semiconductor package and the protruding electrode No adhesive material should remain on the surface.

In addition, the stress characteristic is appropriate to proceed with the EMI shielding layer formation process while maintaining the gap between adjacent semiconductor chips because a plurality of semiconductor packages, i.e., semiconductor chips, are mounted and adhered on the adhesive tape during the EMI shielding layer formation process. The level of tensile and compressive stress should be secured. That is, the adhesive tape must be able to stably maintain the stretched state and maintain a stress balance corresponding to the topology of the bottom surface of the semiconductor package including the protruding electrode.

Accordingly, an embodiment of the present invention to be described later provides an adhesive tape for a semiconductor package manufacturing process capable of satisfying the adhesive properties, retention properties, separation properties and stress properties required during the semiconductor manufacturing process, in particular, the EMI shielding layer forming process. To this end, the adhesive tape for a semiconductor package according to an embodiment of the present invention may have a simple structure in which a base layer and an adhesive layer are stacked to secure productivity and price competitiveness. The adhesive layer maintains chemical resistance, heat resistance and cold resistance, and at the same time has no outgassing, has a thickness to accommodate the protruding electrode, is soft and non-denatured for impregnation of the protruding electrode, and is made of silicone material so that residues are not transferred during detachment. Can be configured. In addition, the base layer is made of a polymer material that stably maintains the tensioned state without stretching between the semiconductor package manufacturing processes, and at the same time maintains the stress balance in response to the topology of the adherend surface, and prevents denaturation and deformation in high temperature and high vacuum environments. Can be configured.

Hereinafter, an adhesive tape for a semiconductor package according to an embodiment of the present invention will be described in detail with reference to the drawings.

1 is a schematic view showing an adhesive tape for a semiconductor package manufacturing process according to an embodiment of the present invention, and FIG. 2 is a shape in which an adhesive tape for a semiconductor package manufacturing process according to an embodiment of the present invention is adhered to a lower surface of a semiconductor package. It is a diagram showing.

1 and 2, the adhesive tape 100 for a semiconductor package manufacturing process according to an embodiment of the present invention includes a base layer 110, an adhesive layer 120 formed on the base layer 110 and containing silicon. And a release film 190 formed on the adhesive layer 120 and containing fluorine. The release film 190 is to protect the adhesive layer 120 of the adhesive tape 100 until the semiconductor package manufacturing process proceeds, and the release film 190 may be separated from the adhesive layer 120 during the manufacturing process. The adhesive layer 120 may be in contact with the lower surface of the semiconductor package 300, and the plurality of protruding electrodes 310 formed on the lower surface of the semiconductor package 300 may have a form impregnated with the adhesive layer 120. For reference, although not shown in the drawings, the EMI shielding layer may be formed on the top and side surfaces of the semiconductor package 300.

The base layer 110 may include a polymer material. Specifically, the base layer 110 stably maintains a tensioned state without stretching between the semiconductor package manufacturing processes and maintains a stress balance corresponding to the topology of the bottom surface of the semiconductor package 300 in which a plurality of protruding electrodes 310 are formed. In addition, it may include a polymer material that is not denatured or deformed in a high temperature and high vacuum environment. Accordingly, the base layer 110 may be a single layer selected from the group consisting of polyethylene terephthalate (PET), polyimide (PI), and polyolefine (PO), or a multilayer in which two or more are stacked. .

The base layer 110 may have a thickness thinner than the adhesive layer 120. This is to more effectively maintain a stress balance corresponding to the topology of the lower surface of the semiconductor package 300 on which the plurality of protruding electrodes 310 are formed. To this end, the base layer 110 may have a thickness in the range of 10 μm to 30 μm. Here, when the thickness of the base layer 110 is less than 10 μm, it is very difficult for a user to handle the adhesive tape 100, and it may be difficult to easily remove the release film 190. On the other hand, when the thickness of the base layer 110 exceeds 30 μm, it may be difficult to maintain a stress balance corresponding to the topology of the lower surface of the semiconductor package 300 on which the plurality of protruding electrodes 310 are formed. For reference, if the stress balance cannot be maintained, after the adhesive tape 100 is adhered to the semiconductor package 300, the repulsive force between the semiconductor package 300 and the adhesive layer 120 increases, so that the semiconductor package 300 and the adhesive layer It can act as a cause of lowering the adhesion and adhesion between (120).

One surface of the base layer 110 in contact with the adhesive layer 120 may be surface-treated to improve adhesion therebetween. Since the silicone material used as the adhesive layer 120 is not easy to mix, stir, and adhere to different materials due to its unique chemical stability, the adhesive strength with the base layer 110 is low, so that a lifting phenomenon occurs or the adhesive layer 120 is deposited. A defect in the form of being transferred to the surface may occur. The surface treatment is to prevent the occurrence of the above-described defects, and a corona discharge treatment method may be used. The surface-treated base layer 110 may have fine concave-convex formations, and the surface area and roughness of one surface of the base layer 110 may be increased due to the fine concave-convexity. In addition, a dipole may be formed inside the surface-treated base layer 110, and one surface of the base layer 110 in contact with the adhesive layer 120 may be charged by the dipole. In addition, free-radicals having unpaired electrons may be attached to one surface of the surface-treated base layer 110. As the surface area and roughness of one surface of the base layer 110 treated in this way increase, have a surface charged due to the dipole formed inside the base layer 110, and free-radicals having unpaired electrons are attached to the surface. Even if the adhesive layer 120 is formed using a silicone material, the adhesive force between the base layer 110 and the adhesive layer 120 can be effectively improved. That is, it is possible to prevent the adhesive layer 120 containing silicon from peeling off from the base layer 110 through the surface treatment.

The adhesive layer 120 formed on the base layer 110 may have a thickness greater than the size (eg, diameter or height) of the protruding electrode 310 so as to impregnate the protruding electrode 310 such as a solder ball. Specifically, the adhesive layer 120 may have a thickness in the range of 100 μm to 700 μm. More specifically, the adhesive layer 120 may be in close contact with the lower surface of the semiconductor package 300 so as to correspond to the lower surface topology of the semiconductor package 300 on which the plurality of protruding electrodes 310 are formed. That is, the adhesive layer 120 may have a shape adhered according to the topology if the semiconductor package 300 having the plurality of protruding electrodes 310 formed thereon can maintain a constant thickness as much as possible according to the topology of the lower surface of the semiconductor package 300. Through this, it is possible to maintain a balance of stress in the adhesive layer 120 to improve adhesive properties, retention properties, and stress properties, and in a region where the lower surface of the semiconductor package 300 and the protruding electrode 310 contact the semiconductor package 300 ) It is possible to prevent the occurrence of voids between the adhesive tape 100.

The adhesive layer 120 may have an adhesive strength in the range of 500 gf/25mm to 2500 gf/25mm in order to secure adhesive properties, retention properties, and separation properties. Here, when the adhesive force of the adhesive layer 120 is less than 500 gf/25mm, the adhesive layer 120 is the lower surface of the semiconductor package 300 and the semiconductor package 300 in a process environment for forming the EMI shielding layer, for example, in a high temperature and high vacuum environment. A phenomenon of being pushed out from the plurality of protruding electrodes 310 formed on the lower surface of the panel may occur, or gas and particles may penetrate between the adhesive tape 100 and the adhesive surface of the semiconductor package 300 between processes. On the other hand, when the adhesive strength of the adhesive layer 120 exceeds 2500 gf/25mm, the adhesive tape 100 is easily removed when removing the adhesive tape 100 at room temperature and atmospheric pressure after completing the process of forming the EMI shielding layer. The adhesive material may not be removed or may remain on the lower surface of the semiconductor package 300 and the surface of the protruding electrode 310.

The adhesive layer 120 maintains chemical resistance, heat resistance, and cold resistance, has no outgassing, is soft for impregnation of the protruding electrode 310 and is not denatured, and may be made of a silicone material so that residues are not transferred during detachment. Specifically, the adhesive layer 120 containing silicone may have a siloxane bond as a basic skeleton. More specifically, the adhesive layer 120 has a siloxane bond as a basic skeleton, but a void is generated between the semiconductor package 300 and the adhesive tape 100 in the area where the lower surface of the semiconductor package 300 and the protruding electrode 310 contact. Even so, the molecular structure may have a network structure so as to prevent excessive expansion of the voids between manufacturing processes (especially during processing in a high vacuum environment). For reference, the adhesive layer 120 having a siloxane bond as a basic skeleton can implement a network structure having a wide spacing between molecules depending on the number and type of functional groups bonded to the side chain of the siloxane bond. The inter-molecular space prevents excessive expansion of the pores in a high vacuum environment.

Here, in the siloxane bond, silicon (Si) and oxygen (O) are interconnected, and since the bonding energy between silicon (Si) and oxygen (O) is large, excellent heat resistance and chemical resistance can be secured. In addition, the siloxane bond has a low glass transition point because it has amorphous properties that make it difficult to form a crystal structure due to its molecular structure, so excellent cold resistance can be secured. When molecules approach each other, a pulling force acts between molecules to form a kind of bonding state. Since the attraction between these molecules is small, siloxane bonds can have a low glass transition point. Due to this molecular structure, the adhesive layer 120 having a siloxane bond as a basic skeleton is difficult to harden, and the viscosity change according to temperature is small, so that stable physical properties can be exhibited over a wide temperature range.

In order to implement the above-described thickness, adhesion, and molecular structure, the adhesion layer 120 includes an adhesion topic in which trimethylated silica, dimethyl siloxane copolymer, and ethylbenzene are mixed. Composition may be included. Here, the dimethylsiloxane copolymer may also include a dimethylsiloxane block copolymer. In the adhesion subject, trimethylated silica may play a role of controlling adhesion according to the content, and the dimethylsiloxane copolymer may play a role of providing a basic skeleton of a siloxane bond. In addition, ethylbenzene may play a role of generating an intermediate product to facilitate bonding between trimethylated silica, dimethylsiloxane copolymer, and other additives.

Hereinafter, adhesive compositions applicable as the adhesive layer 120 of the adhesive tape 100 according to an embodiment of the present invention will be described in detail.

First, when the adhesive layer 120 has a thickness in the range of 100 μm to 250 μm corresponding to the size of the protruding electrode 310, the adhesive layer 120 is 1500 gf/25mm to 2500 gf/25mm to satisfy the required characteristics. It can have a range of adhesion. To this end, the adhesive composition may include 0.5 to 1.5 parts by weight of a crosslinker, 0.5 to 1.5 parts by weight of an anchorage additive, and 0.5 to 1.5 parts by weight of a catalyst based on 100 parts by weight of the first adhesive agent. .

Specifically, the first adhesive subject is toluene, xylene, ethylbenzene, 1-Ethynylcyclohexanol, trimethylated silica, siloxane and silicone. , Di-methyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, vinyl group-terminated), dimethyl, methylvinylsiloxane, hydroxy, vinyl-terminated (Dimethyl, methylvinyl siloxane, hydroxy-, vinyl-terminated) ), dimethyl, methylvinylsiloxane, dimethylvinyl-terminated (Dimethyl, methylvinyl siloxane, dimethylvinyl-terminated) and siloxane and silicone, di-methyl, methylvinyl, hydroxy-terminated (Siloxanes and Silicones, di-Me, Me Vinyl, hydroxy-terminated) may contain a mixture in a predetermined ratio. Here, 1-ethynylcyclohexanol may play a role of controlling the curing rate, and toluene and xylene may be used as solvents. And, siloxane and silicone, di-methyl, vinyl group-terminated, dimethyl, methylvinylsiloxane, hydroxy, vinyl-terminated, dimethyl, methylvinylsiloxane, dimethylvinyl-terminated and siloxane and silicone, di-methyl, The methylvinyl, hydroxy-terminated may be a dimethylsiloxane copolymer.

More specifically, in the entire first adhesive topic, toluene is in the range of 20% to 25%, xylene is in the range of 10% to 20%, ethylbenzene is in the range of 2.5% to 10%, 1-ethynylcyclo Hexanol is in the range of 0.1% to 1%, trimethylated silica is in the range of 30% to 40%, siloxane and silicone, di-methyl, vinyl group-terminated in the range of 10% to 20%, dimethyl , Methylvinylsiloxane, hydroxy, vinyl-terminated in a ratio ranging from 1% to 10%, dimethyl, methylvinylsiloxane, dimethylvinyl-terminated in a proportion ranging from 1% to 10%, siloxane and silicone, di-methyl , Methylvinyl, and hydroxy-terminated may each account for a proportion ranging from 1% to 10%.

The crosslinking agent reacts with the adhesive subject to control the crosslinking and curing reaction, and may play a role of helping to more easily form a network structure in the adhesive composition. As the crosslinking agent, a crosslinking mixture in which heptane, siloxane, silicon, and methyl hydrogen (Siloxanes and Silicones, Me hydrogen) are mixed in a predetermined ratio may be used. In the total crosslinking mixture, heptane may occupy a proportion in the range of 0.25% to 1%, and siloxane, silicon, and methyl hydrogen may occupy 99% to 99.75%.

The anchorage additive may serve to provide adhesion between the silicone and the substrate. Anchorage additives include trimethoxy[3-(oxiranylmethoxy)propyl]silane (Silane, trimethoxy[3-(oxiranylmethoxy)propyl]-), trimethoxy[(3-oxiranylmethoxy)propyl]silane Siloxanes and Silicones, di-Me, Me vinyl, hydroxy-terminated reaction products with trimethoxy[3-oxiranylmethoxy)propyl]silane combined with siloxanes and silicones, di-methyl, di-vinyl, hydroxy-terminated reaction products with trimethoxy[3-oxiranylmethoxy)propyl]silane ), methanol (Methanol) and divinylhexamethylcyclotetrasiloxane (Divinylhexamethylcyclotetrasiloxane) may be used an anchorage mixture mixed in a predetermined ratio. In the entire anchorage mixture, trimethoxy[3-(oxiranylmethoxy)propyl]silane is in the range of 30% to 40%, trimethoxy[(3-oxiranylmethoxy)propyl]silane and bound siloxanes and Silicones, di-methyl, di-vinyl, hydroxy-terminated reaction products are in the range of 60% to 70%, methanol is in the range of 1% to 3%, divinylhexamethylcyclotetrasiloxane is in the range of 1% Each can occupy a percentage in the 2.5% range.

The catalyst may reduce the activation energy of the reaction, thereby helping the reaction, curing, and crosslinking operation to proceed even under low temperature or mild conditions. As the catalyst, a platinum catalyst can be used. Specifically, as a catalyst, platinum, 1,3-diethenyl-1,1,3,3-tetramethyldisiloxane complexes, siloxane And silicones, di-methyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, vinyl group-terminated), tetramethyldivinyldisiloxane, and siloxane and silicone, di-methyl, hydroxy-terminated A catalyst mixture in which (Siloxanes and Silicones, di-Me, hydroxy-terminated) is mixed in a predetermined ratio can be used. In the total catalyst mixture, platinum, 1,3-dietenyl-1,1,3,3-tetramethyldisiloxane complex is in the range of 1% to 10%, siloxane and silicon, di-methyl, vinyl group-terminated Is in the range of 90% to 99%, tetramethyldivinyldisiloxane is in the range of 1% to 10%, siloxane and silicone, di-methyl, hydroxy-terminated is in the range of 1% to 10%, respectively Can occupy.

Next, when the adhesive layer 120 has a thickness in the range of 250 μm to 400 μm corresponding to the size of the protruding electrode 310, the adhesive layer 120 is 500 gf/25mm to 1500 gf/to satisfy the required characteristics. It can have an adhesive strength in the range of 25mm. To this end, the adhesive composition may include 0.5 to 1.5 parts by weight of a crosslinking agent, 0.5 to 1.5 parts by weight of an anchorage additive, and 0.5 to 1.5 parts by weight of a catalyst based on 100 parts by weight of the second adhesive subject. Here, the crosslinking agent, the anchorage additive and the catalyst may be the same as those described above.

Specifically, the second adhesive subject is xylene, trimethylated silica, ethylbenzene, siloxane and silicone, di-methyl, vinyl group-terminated (Siloxanes and Silicones, di-Me). , vinyl group-terminated) may include a mixture in a predetermined ratio. Here, xylene may be used as a solvent, and siloxane and silicone, di-methyl, and vinyl group-terminated may be a dimethylsiloxane copolymer. More specifically, in the entire second adhesive subject, xylene is in the range of 29% to 37%, trimethylated silica is in the range of 29% to 34%, ethylbenzene is in the range of 9% to 11%, siloxane and Silicon, di-methyl, and vinyl group-terminated may each account for a proportion ranging from 21% to 24%.

Next, when the adhesive layer 120 has a thickness in the range of 400 μm to 550 μm corresponding to the size of the protruding electrode 310, the adhesive layer 120 is 1800 gf/25mm to 2500 gf/to satisfy the required characteristics. It can have an adhesive strength in the range of 25mm. To this end, the adhesive composition may include 0.5 to 1.5 parts by weight of a crosslinking agent, 0.5 to 1.5 parts by weight of an anchorage additive, and 0.8 to 1.8 parts by weight of a catalyst based on 100 parts by weight of the second adhesive agent. Here, the crosslinking agent, the anchorage additive and the catalyst may be the same as those described above.

Next, when the adhesive layer 120 has a thickness in the range of 550 μm to 700 μm corresponding to the size of the protruding electrode 310, the adhesive layer 120 is 1800 gf/25mm to 2500 gf/to satisfy the required characteristics. It can have an adhesive strength in the range of 25mm. To this end, the adhesive composition is 0.5 to 1.5 parts by weight of a crosslinking agent, 0.5 to 1.5 parts by weight of an anchorage additive, and 0.5 parts by weight of a catalyst based on 100 parts by weight of the third adhesive topic in which the first and second subjects are mixed in a ratio of 95:1 to 99:1. It may contain to 1.5 parts by weight. Here, the crosslinking agent, the anchorage additive and the catalyst may be the same as those described above.

Specifically, in the third adhesive subject, the first subject is xylene, trimethylated silica, ethylbenzene, siloxane and silicon, di-methyl, vinyl group-terminated (Siloxanes and Silicones). , di-Me, vinyl group-terminated) may contain a mixture in a predetermined ratio. Here, xylene may be used as a solvent, and siloxane and silicone, di-methyl, and vinyl group-terminated may be a dimethylsiloxane copolymer. More specifically, in the entire first topic, xylene is in the range of 29% to 37%, trimethylated silica is in the range of 29% to 34%, ethylbenzene is in the range of 9% to 11%, siloxane and silicone , Di-methyl, vinyl group-terminated may account for a ratio in the range of 21% to 24%, respectively.

In the third adhesive topic, the second topic can play a role in controlling adhesion, and siloxanes and silicones, di-methyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, vinyl group-terminated) and 1- A mixture in which 1-Ethynylcyclohexanol is mixed in a predetermined ratio may be included. Here, 1-ethynylcyclohexanol may play a role of controlling the curing rate, and siloxane and silicone, di-methyl, and vinyl group-terminated may be a dimethylsiloxane copolymer. More specifically, siloxane and silicone, di-methyl, and vinyl group-terminated in the entire second subject may occupy a ratio in the range of 99% to 99.9%, and 1-ethynylcyclohexanol in the range of 0.1% to 1% It can occupy a percentage of.

Next, when the adhesive layer 120 has a thickness in the range of 250㎛ to 550㎛ corresponding to the size of the protruding electrode 310, the adhesive layer 120 is 1000 gf / 25mm to 1300 gf / to satisfy the required characteristics. It can have an adhesive strength in the range of 25mm. To this end, the adhesive composition may include 0.5 to 3 parts by weight of a polymerization initiator based on 100 parts by weight of the fourth adhesive subject in which the first and second subjects are mixed in a ratio of 50:50 to 80:20.

Specifically, in the fourth adhesive topic, the first topic is the hydroxy-terminated reaction product of xylene, ethylbenzene, toluene, siloxane and silicone, di-methyl, and chlorotrimethylsilane, hydrochloric acid. , Isopropyl alcohol and sodium silicate (Siloxanes and silicones, di-Me, hydroxy-terminated reaction products with chlorotrimethylsilane, hydrochloric acid, iso-Pr alc. and sodium silicate) may be mixed in a predetermined ratio. Here, the hydroxy-terminated reaction product of siloxane and silicone, di-methyl, chlorotrimethylsilane, hydrochloric acid, isopropyl alcohol, and sodium silicate are reaction products in which trimethylated silica and dimethylsiloxane copolymer are bonded in a crosslinked form. I can. More specifically, in the entire first topic, xylene is in the range of 30% to 40%, ethylbenzene is in the range of 2.5% to 10%, toluene is in the range of 0.1% to 0.25%, siloxane and silicone, di- Hydroxy-terminated reaction products of methyl and chlorotrimethylsilane, hydrochloric acid, isopropyl alcohol, and sodium silicate may each occupy a proportion in the range of 50% to 60%.

In the fourth adhesive topic, the second topic can play a role in controlling adhesion, and toluene, siloxane and silicone, di-methyl, and hydroxy-terminated (Siloxanes and Silicones, di-Me, hydroxy-terminated). ), xylene, trimethylated silica, and ethylbenzene may be mixed in a predetermined ratio. Here, toluene and xylene may be used as a solvent, and siloxane and silicone, di-methyl, and hydroxy-terminated may be a dimethylsiloxane copolymer. More specifically, in the entire second topic, toluene is in the range of 70% to 80%, siloxane and silicone, di-methyl, hydroxy-terminated in the range of 10% to 20%, and xylene is in the range of 1% to 10 % Range, trimethylated silica may occupy a ratio of 1% to 10%, and ethylbenzene may occupy a ratio of 0.25% to 1%, respectively.

The polymerization initiator refers to a substance that causes a chain polymerization reaction, and benzoyl peroxide may be used.

Next, when the adhesive layer 120 has a thickness in the range of 250㎛ to 550㎛ corresponding to the size of the protruding electrode 310, the adhesive layer 120 is 1000 gf / 25mm to 1300 gf / to satisfy the required characteristics. It can have an adhesive strength in the range of 25mm. To this end, the adhesive composition may include 0.5 to 3 parts by weight of a polymerization initiator based on 100 parts by weight of the fifth adhesive subject in which the first and second subjects are mixed in a ratio of 50:50 to 80:20. Benzoyl peroxide may be used as the polymerization initiator.

Specifically, in the fifth adhesive topic, the first topic is the hydroxy-terminated reaction product of xylene, ethylbenzene, toluene, siloxane and silicone, di-methyl, and chlorotrimethylsilane, hydrochloric acid. , Isopropyl alcohol and sodium silicate (Siloxanes and silicones, di-Me, hydroxy-terminated reaction products with chlorotrimethylsilane, hydrochloric acid, iso-Pr alc. and sodium silicate) may be mixed in a predetermined ratio. Here, the hydroxy-terminated reaction product of siloxane and silicone, di-methyl, chlorotrimethylsilane, hydrochloric acid, isopropyl alcohol, and sodium silicate are reaction products in which trimethylated silica and dimethylsiloxane copolymer are bonded in a crosslinked form. I can. More specifically, in the entire first topic, xylene is in the range of 30% to 40%, ethylbenzene is in the range of 2.5% to 10%, toluene is in the range of 0.1% to 0.25%, siloxane and silicone, di- Hydroxy-terminated reaction products of methyl and chlorotrimethylsilane, hydrochloric acid, isopropyl alcohol, and sodium silicate may each occupy a proportion in the range of 50% to 60%.

In the fifth adhesive topic, the second topic can play a role in controlling adhesion, and toluene, siloxane and silicone, di-methyl, methyl vinyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, Me vinyl, vinyl groupterminated), xylene, trimethylated silica, ethylbenzene, siloxane and silicon, di-methyl, methyl vinyl, siloxanes and silicones, di -Me, Me vinyl, hydroxy-terminated) and 1-Ethynylcyclohexanol may be mixed in a predetermined ratio. Here, siloxane and silicone, di-methyl, methylvinyl, vinyl group-terminated and siloxane and silicone, di-methyl, methylvinyl, and hydroxy-terminated may be a dimethylsiloxane copolymer. More specifically, toluene is in a proportion ranging from 47% to 63%, siloxane and silicone, di-methyl, methylvinyl, vinyl group-terminated in a proportion ranging from 21% to 31%, xylene in a proportion ranging from 2.3% to 3.1% The ratio of, trimethylated silica is in the range of 10% to 14%, ethylbenzene is in the range of 0.44% to 0.6%, siloxane and silicone, di-methyl, methylvinyl, hydroxy-terminated is 2.2% to 3 % Range, 1-ethynylcyclohexanol may occupy a proportion of 0.14% to 0.18%, respectively.

The release film 190 facilitates storage and transport of the adhesive tape 100 and may serve to protect the adhesive layer 120 before the semiconductor package 300 manufacturing process. The release film 190 may contain fluorine to facilitate the protection and separation of the adhesive layer 120 containing silicon, and may have an adhesive strength in the range of 3 gf/25mm to 8 gf/25mm. If the adhesive force of the release film 190 is less than 3 gf/25mm, there is a risk that the release film will naturally peel off, and if it exceeds 8 gf/25mm, in the process of removing the release film 190 from the adhesive tape 100 The adhesive tape 100 can be easily wrinkled. For reference, the phenomenon that the adhesive tape 100 is easily wrinkled in the process of removing the release film 190 is because the thickness of the base layer 110 of the adhesive tape 100 according to the embodiment of the present invention is very thin.

As described above, since the adhesive tape 100 according to the embodiment of the present invention has a very simple structure in which the base layer 110 and the adhesive layer 120 are sequentially stacked, productivity and price competitiveness can be improved.

In addition, since the base layer 110 includes a single layer selected from the group consisting of polyethylene terephthalate (PET), polyimide (PI), and polyolefin (PO), or a multilayer in which two or more are stacked, the EMI shielding layer formation process There is no deformation of physical properties due to heat generated during the semiconductor package manufacturing process, and stress characteristics required in the adhesive tape 100 for a semiconductor package manufacturing process can be secured.

In addition, since the base layer 110 has a very thin thickness in the range of 10 μm to 30 μm, it is possible to effectively maintain a stress balance corresponding to the topology of the lower surface of the semiconductor package 300 in which the plurality of protruding electrodes 310 are formed.

In addition, as the surface treatment is performed on one surface of the base layer 110 in contact with the adhesive layer 120, even if a silicone material is used as the adhesive layer 120, the adhesion between the base layer 110 and the adhesive layer 120 may be improved.

In addition, the adhesive layer 120 includes an adhesive theme in which trimethylated silica, dimethylsiloxane copolymer and ethylbenzene are mixed, so that the adhesion required in the adhesive tape 100 for the semiconductor package manufacturing process used in the process of forming an EMI shielding layer. Characteristics, retention characteristics, separation characteristics and stress characteristics can be easily secured.

In addition, since the adhesive layer 120 has a network structure based on a siloxane bond as a basic skeleton, a void between the semiconductor package 300 and the adhesive tape 100 in a region where the lower surface of the semiconductor package 300 and the protruding electrode 310 contact. Even if this occurs, it is possible to prevent excessive expansion of the voids between manufacturing processes (especially during processes in a high vacuum environment).

In addition, as the adhesive composition of the adhesive layer 120 optimized in response to the size of the protruding electrode 310 of the semiconductor package 300 is provided, it is required by the adhesive tape 100 for the semiconductor package manufacturing process used in the process of forming an EMI shielding layer. Adhesion characteristics, retention characteristics, separation characteristics, and stress characteristics can be more effectively secured.

3 is a diagram schematically illustrating an adhesive tape for a semiconductor package manufacturing process according to another embodiment of the present invention. Hereinafter, for convenience of description, the same reference numerals are used for the same configurations as those in the above-described embodiment, and detailed descriptions will be omitted.

As shown in Figure 3, the adhesive tape 100 for a semiconductor package manufacturing process according to another embodiment of the present invention is on the base layer 110, the intermediate layer 130 formed on the base layer 110, the intermediate layer 130 It may include an adhesive layer 120 containing silicon formed and a release film 190 containing fluorine formed on the adhesive layer 120. Here, the base layer 110, the adhesive layer 120, and the release film 190 may be the same as in the above-described embodiment.

The intermediate layer 130 is an intermediate material inserted between the base layer 110 and the adhesive layer 120 made of a different material, and may serve to improve adhesion between the base layer 110 and the adhesive layer 120. Therefore, the intermediate layer 130 is a base layer 110 including a single layer selected from the group consisting of polyethylene terephthalate (PET), polyimide (PI), and polyolefin (PO) or a multilayer in which two or more are stacked, and silicone A material having excellent physical and chemical bonding strength with all of the adhesive layers 120 contained therein may be used. Specifically, the intermediate layer 130 includes toluene, siloxane and silicon, di-methyl, hydroxy-terminated (Siloxanes and Silicones, di-Me, hydroxy-terminated), xylene, and trimethylated. A primer mixture in which trimethylated silica and ethylbenzene are mixed may be used. More specifically, in the total primer mixture, toluene is in the range of 70% to 80%, siloxane and silicone, di-methyl, hydroxy-terminated in the range of 10% to 20%, and xylene is 1% to 2.5%. The ratio of the range, trimethylated silica may occupy a ratio in the range of 1% to 10%, and ethylbenzene may occupy a ratio in the range of 0.25% to 1%, respectively.

The intermediate layer 130 may have a basis weight in the range of 0.2 g/m ² to 0.5 g/m ² on the base layer 110. When the basis weight of the intermediate layer 130 is less than 0.2 g/m ² , it may not be able to provide sufficient adhesive strength to each of the base layer 110 and the adhesive layer 120, and when it exceeds 0.5 g/m ² , the adhesive tape 100 Upon removal, a defect in which the base layer 110 and the adhesive layer 120 are separated based on the intermediate layer 130 may occur.

As described above, the adhesive tape 100 according to another embodiment of the present invention further includes an intermediate layer 130 inserted between the base layer 110 and the adhesive layer 120, thereby using a silicone material as the adhesive layer 120 Even so, the adhesion between the base layer 110 and the adhesive layer 120 may be further improved.

4 is a flowchart illustrating a manufacturing process of an adhesive tape for manufacturing a semiconductor package according to an embodiment of the present invention. Hereinafter, for convenience of description, an example of a method of manufacturing the adhesive tape shown in FIG. 1 will be described.

As shown in FIG. 4, a base layer 110 is prepared. The base layer 110 may be a single layer selected from the group consisting of polyethylene terephthalate (PET), polyimide (PI), and polyolefin (PO), or a multilayer in which two or more are stacked. At this time, the thickness of the base layer 110 may have a thickness in the range of 10 μm to 30 μm.

Next, surface treatment is performed on one surface of the base layer 110. One surface of the base layer 110 is a surface in contact with the adhesive layer 120 to be formed through a subsequent process, and the surface treatment is to improve adhesion between the base layer 110 and the adhesive layer 120. The surface treatment for improving the adhesion between the base layer 110 and the adhesive layer 120 may use a corona discharge treatment method.

The surface-treated base layer 110 may have fine concave-convex formations, and due to the fine concave-convexity, the surface area and roughness of one surface of the base layer 110 may be increased. In addition, a dipole may be formed inside the surface-treated base layer 110, and one surface of the base layer 110 in contact with the adhesive layer 120 may be charged by the dipole. In addition, free-radicals having unpaired electrons may be attached to one surface of the surface-treated base layer 110. In this way, the surface area and roughness of one surface of the surface-treated base layer 110 increases, has a charged surface due to the dipole formed inside the base layer 110, and free-radicals having unpaired electrons are attached to the surface. Accordingly, even if the adhesive layer 120 is formed using a silicone material, the adhesive force between the base layer 110 and the adhesive layer 120 can be effectively improved.

Next, an adhesive composition for forming the adhesive layer 120 is prepared. The adhesive composition may be formed by injecting and mixing predetermined substances in a mixing container at a preset ratio. For example, 0.5 to 1.5 parts by weight of a crosslinking agent and 0.5 to 1.5 parts by weight of an anchorage additive based on 100 parts by weight of an adhesive agent in which trimethylated silica, dimethyl siloxane copolymer, and ethylbenzene are mixed. The adhesive composition may be prepared by mixing parts and 0.5 to 1.8 parts by weight of a catalyst.

Next, the prepared adhesive composition is stabilized. Stabilization of the adhesive composition is to induce chemical stability and even polymerization reaction of the adhesive composition while removing air bubbles in the adhesive composition. Specifically, the adhesive composition prepared for 4 to 12 hours for stabilization of the adhesive composition may be rested in a thermal equilibrium state. Typically, ultrasonic treatment or vacuum suction is performed to remove air bubbles in the adhesive composition, but since the adhesive composition according to the embodiment of the present invention contains a silicone component, in order to secure chemical stability and prevent a rapid polymerization reaction It is preferable to proceed in thermal equilibrium. For reference, the thermal equilibrium state may refer to a stabilized state in which no external stimulus or external force acts.

Next, the adhesive layer 120 is formed by applying a stabilized adhesive composition on one surface of the surface-treated base layer 110 using a comma coater. In this case, the comma coater may apply the adhesive composition on one surface of the base layer 110 to be thicker than the target thickness (ie, the final thickness) of the adhesive layer 120. Specifically, the comma coater may apply the adhesive composition to a thickness of 2.5 to 3.5 times greater than the target thickness of the adhesive layer 120. For example, when the target thickness of the adhesive layer 120 is 500 μm, the comma coater may apply the adhesive composition to have a thickness in the range of 1250 μm to 1750 μm. As will be described later, the adhesive layer 120 may gradually decrease in thickness during a subsequent drying heat treatment and curing process to reach a target thickness.

Next, the first drying heat treatment is performed on the adhesive layer 120. The first drying heat treatment is for removing the solvent in the adhesive composition and activating the polymerization reaction, and may be performed using an infrared lamp, and may be performed at a temperature in the range of 60°C to 80°C for 3 to 6 minutes.

Next, a second dry heat treatment is performed on the adhesive layer 120 following the first dry heat treatment. The secondary dry heat treatment is for activating the polymerization reaction while removing the solvent in the adhesive composition, like the first dry heat treatment, and can be performed using an infrared lamp. The second dry heat treatment may be performed at a higher temperature than the first dry heat treatment, and may be performed for the same time as the first dry heat treatment. For example, the secondary drying heat treatment may be performed for 3 minutes to 6 minutes at a temperature in the range of 160°C to 180°C.

Next, a third dry heat treatment is performed on the adhesive layer 120 following the second dry heat treatment. The third dry heat treatment is also for activating the polymerization reaction while removing the solvent in the adhesive composition, like the first and second dry heat treatments, and may be performed using an infrared lamp. The third dry heat treatment may be performed at a higher temperature than the second dry heat treatment, and may be performed for a longer time than the second dry heat treatment. For example, the third drying heat treatment may be performed at a temperature in the range of 190°C to 210°C for 9 to 18 minutes.

Next, the adhesive layer 120 is cured and stabilized at room temperature for 12 to 24 hours. That is, the polymerization reaction in the adhesive layer 120 is stably finished through a pause that slowly cools the base layer 110 and the adhesive layer 120 heated to room temperature in the first to third dry heat treatment process, and the adhesive layer 120 It can be cured to have the required hardness.

Here, drying the adhesive layer 120 while gradually increasing the temperature in the first to third drying heat treatment process is to prevent the adhesive layer 120 having a thick thickness from drying and curing from the surface, through which the adhesive layer ( 120) Can easily remove air bubbles. In addition, after the third drying heat treatment is performed, the temperature is slowly reduced to room temperature, thereby implementing the adhesive layer 120 having a more stable state and even thickness.

When the above-described first to third dry heat treatment and stabilization at room temperature are completed, the adhesive layer 120 may have a target thickness.

Next, a release film 190 containing fluorine is attached to the adhesive layer 120. The release film 190 may contain fluorine to facilitate the protection and separation of the adhesive layer 120 containing silicon, and may have an adhesive strength in the range of 3 gf/25mm to 8 gf/25mm.

The adhesive tape 100 according to an embodiment of the present invention may be completed through the above-described process.

The embodiments described in the present specification and the accompanying drawings are merely illustrative of some of the technical ideas included in the present invention. Accordingly, it is obvious that the embodiments disclosed herein are not intended to limit the technical idea of the present disclosure, but to explain the technical idea, and thus the scope of the technical idea of the present disclosure is not limited by these embodiments. Modification examples and specific embodiments that can be easily inferred by those skilled in the art within the scope of the technical idea included in the specification and drawings of the present invention should be interpreted as being included in the scope of the present invention.

100: adhesive tape 110: base layer
120: adhesive layer 130: intermediate layer
190: release film 300: semiconductor package
310: protruding electrode (ex. solder ball)

Claims (21)

delete delete delete delete delete delete delete delete delete delete delete delete In the adhesive tape for a semiconductor package manufacturing process including a plurality of protruding electrodes formed on a lower surface, which is used in the EMI (Electro Magnetic Interference) shielding layer forming process,
The adhesive tape includes a base layer having one surface-treated surface and an adhesive layer containing silicon formed on one surface of the base layer and adhered to correspond to a bottom topology of the semiconductor package,
The adhesive layer comprises an adhesive composition having a molecular structure having a network structure,
The adhesive composition includes an adhesive topic in which trimethylated silica, dimethyl siloxane copolymer, and ethylbenzene are mixed,
The adhesive composition includes 0.5 to 1.5 parts by weight of a crosslinking agent, 0.5 to 1.5 parts by weight of an anchorage additive, and 0.5 to 1.5 parts by weight of a catalyst based on 100 parts by weight of the adhesive topic in which the first and second subjects are mixed in a ratio of 95:5 to 99:1. Includes wealth,
The first subject is xylene, trimethylated silica, ethylbenzene, siloxane and silicon, di-methyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, vinyl group). -terminated) contains a mixture,
The second subject is a mixture of siloxane and silicon, di-methyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, vinyl group-terminated) and 1-Ethynylcyclohexanol. Adhesive tape containing.

The method of claim 13,
The adhesive tape, characterized in that the adhesive layer has a thickness in the range of 550㎛ to 700㎛ and an adhesive strength in the range of 1800 gf/25mm to 2500gf/25mm.
The method of claim 13 or 14,
The crosslinking agent includes a mixture of heptane and siloxane, silicon, and methyl hydrogen (Siloxanes and Silicones, Me hydrogen),
The anchorage additive is trimethoxy[3-(oxiranylmethoxy)propyl]silane (Silane, trimethoxy[3-(oxiranylmethoxy)propyl]-), trimethoxy[(3-oxiranylmethoxy)propyl]silane Siloxanes and Silicones, di-Me, Me vinyl, hydroxyterminated reaction products with trimethoxy[3-oxiranylmethoxy)propyl]silane, combined with siloxanes and silicones, di-methyl, di-vinyl, hydroxy-terminated reaction products It contains a mixture of methanol (Methanol) and divinylhexamethylcyclotetrasiloxane (Divinylhexamethylcyclotetrasiloxane),
The catalysts include platinum, 1,3-diethenyl-1,1,3,3-tetramethyldisiloxane complexes, siloxane and silicone, Di-methyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, vinyl groupterminated), tetramethyldivinyldisiloxane and siloxanes and silicones, di-methyl, hydroxy-terminated (Siloxanes and Silicones, Adhesive tape containing a mixture of di-Me, hydroxy-terminated).
In the adhesive tape for a semiconductor package manufacturing process including a plurality of protruding electrodes formed on a lower surface, which is used in the EMI (Electro Magnetic Interference) shielding layer forming process,
The adhesive tape includes a base layer having one surface-treated surface and an adhesive layer containing silicon formed on one surface of the base layer and adhered to correspond to a bottom topology of the semiconductor package,
The adhesive layer comprises an adhesive composition having a molecular structure having a network structure,
The adhesive composition includes an adhesive topic in which trimethylated silica, dimethyl siloxane copolymer, and ethylbenzene are mixed,
The adhesive composition contains 0.5 to 3 parts by weight of a polymerization initiator based on 100 parts by weight of the adhesive subject in which the first and second subjects are mixed in a ratio of 50:50 to 80:20,
The first subject is xylene, ethylbenzene, toluene, siloxane and silicon, di-methyl, hydroxy-terminated reaction product of chlorotrimethylsilane, hydrochloric acid, isopropyl alcohol and sodium silicate. (Siloxanes and silicones, di-Me, hydroxy-terminated reaction products with chlorotrimethylsilane, hydrochloric acid, iso-Pr alc. and sodium silicate),
The second subject is toluene, siloxane and silicon, di-methyl, hydroxy-terminated (Siloxanes and Silicones, di-Me, hydroxy-terminated), xylene, and trimethylated silica. ) And ethylbenzene (Ethylbenzene) are mixed,
The polymerization initiator adhesive tape containing benzoyl peroxide (Benzoyl Peroxide).
In the adhesive tape for a semiconductor package manufacturing process including a plurality of protruding electrodes formed on a lower surface, which is used in a process of forming an electromagnetic interference (EMI) shielding layer,
The adhesive tape includes a base layer having one surface-treated surface and an adhesive layer containing silicon formed on one surface of the base layer and adhered to correspond to a bottom topology of the semiconductor package,
The adhesive layer comprises an adhesive composition having a molecular structure having a network structure,
The adhesive composition includes an adhesive topic in which trimethylated silica, dimethyl siloxane copolymer, and ethylbenzene are mixed,
The adhesive composition contains 0.5 to 3 parts by weight of a polymerization initiator based on 100 parts by weight of the adhesive subject in which the first and second subjects are mixed in a ratio of 50:50 to 80:20,
The first subject is xylene, ethylbenzene, toluene, siloxane and silicon, di-methyl, hydroxy-terminated reaction product of chlorotrimethylsilane, hydrochloric acid, isopropyl alcohol and sodium silicate. (Siloxanes and silicones, di-Me, hydroxy-terminated reaction products with chlorotrimethylsilane, hydrochloric acid, iso-Pr alc. and sodium silicate),
The second subject is toluene, siloxane and silicone, di-methyl, methyl vinyl, vinyl group-terminated (Siloxanes and Silicones, di-Me, Me vinyl, vinyl groupterminated), xylene, and trimethyl ray. Trimethylated silica, ethylbenzene, siloxane and silicone, di-methyl, methyl vinyl, siloxanes and silicones, di-Me, Me vinyl, hydroxy-terminated and 1-ethynyl It contains a mixture of cyclohexanol (1-Ethynylcyclohexanol),
The polymerization initiator adhesive tape containing benzoyl peroxide (Benzoyl Peroxide).
The method of claim 16 or 17,
The adhesive layer is an adhesive tape, characterized in that it has a thickness in the range of 250㎛ to 550㎛ and an adhesive strength in the range of 1000 gf/25mm to 1300gf/25mm. delete delete delete

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