KR102269512B1 - 웨이퍼 검사 동안 집광 어퍼처에 위치하는 광학 엘리먼트에 대한 구성의 결정 - Google Patents

웨이퍼 검사 동안 집광 어퍼처에 위치하는 광학 엘리먼트에 대한 구성의 결정 Download PDF

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KR102269512B1
KR102269512B1 KR1020177000065A KR20177000065A KR102269512B1 KR 102269512 B1 KR102269512 B1 KR 102269512B1 KR 1020177000065 A KR1020177000065 A KR 1020177000065A KR 20177000065 A KR20177000065 A KR 20177000065A KR 102269512 B1 KR102269512 B1 KR 102269512B1
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optical element
aperture
light
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KR20170021830A (ko
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파벨 콜친
미하일 하우리라우
준웨이 웨이
다니엘 캡
그레이스 첸
로버트 다넨
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95623—Inspecting patterns on the surface of objects using a spatial filtering method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/066—Modifiable path; multiple paths in one sample
    • G01N2201/0668—Multiple paths; optimisable path length

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020177000065A 2014-06-26 2015-06-26 웨이퍼 검사 동안 집광 어퍼처에 위치하는 광학 엘리먼트에 대한 구성의 결정 Active KR102269512B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201462017264P 2014-06-26 2014-06-26
US62/017,264 2014-06-26
US201562111402P 2015-02-03 2015-02-03
US62/111,402 2015-02-03
US14/749,564 2015-06-24
US14/749,564 US9709510B2 (en) 2014-06-26 2015-06-24 Determining a configuration for an optical element positioned in a collection aperture during wafer inspection
PCT/US2015/038115 WO2015200856A1 (en) 2014-06-26 2015-06-26 Determining a configuration for an optical element positioned in a collection aperture during wafer inspection

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KR20170021830A KR20170021830A (ko) 2017-02-28
KR102269512B1 true KR102269512B1 (ko) 2021-06-24

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US (2) US9709510B2 (enExample)
JP (1) JP6652511B2 (enExample)
KR (1) KR102269512B1 (enExample)
CN (2) CN108508028B (enExample)
IL (1) IL248647B (enExample)
WO (1) WO2015200856A1 (enExample)

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US11703459B2 (en) 2019-11-04 2023-07-18 Tokyo Electron Limited System and method to calibrate a plurality of wafer inspection system (WIS) modules
US11168978B2 (en) 2020-01-06 2021-11-09 Tokyo Electron Limited Hardware improvements and methods for the analysis of a spinning reflective substrates
CN115315794A (zh) 2020-03-10 2022-11-08 东京毅力科创株式会社 用于集成到跟踪系统的长波红外热传感器
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CN108508028B (zh) 2021-03-09
KR20170021830A (ko) 2017-02-28
JP2017527780A (ja) 2017-09-21
IL248647B (en) 2020-05-31
CN106415249A (zh) 2017-02-15
US20150377797A1 (en) 2015-12-31
JP6652511B2 (ja) 2020-02-26
WO2015200856A1 (en) 2015-12-30
CN106415249B (zh) 2018-06-12
US10215713B2 (en) 2019-02-26
CN108508028A (zh) 2018-09-07
US9709510B2 (en) 2017-07-18
US20170292918A1 (en) 2017-10-12
IL248647A0 (en) 2017-01-31

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