KR102252341B1 - 계측 타겟의 편광 측정 및 대응 타겟 설계 - Google Patents

계측 타겟의 편광 측정 및 대응 타겟 설계 Download PDF

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KR102252341B1
KR102252341B1 KR1020167001849A KR20167001849A KR102252341B1 KR 102252341 B1 KR102252341 B1 KR 102252341B1 KR 1020167001849 A KR1020167001849 A KR 1020167001849A KR 20167001849 A KR20167001849 A KR 20167001849A KR 102252341 B1 KR102252341 B1 KR 102252341B1
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segmented
divided
target structure
target
polarized light
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KR20160027017A (ko
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에란 아밋
배리 로에브스키
앤드류 힐
암논 마나센
누리엘 아미르
블라디미르 레빈스키
로이에 볼코비치
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/392—Floor-planning or layout, e.g. partitioning or placement
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
    • H01L22/30—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2290/00—Aspects of interferometers not specifically covered by any group under G01B9/02
    • G01B2290/70—Using polarization in the interferometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8848—Polarisation of light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Architecture (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Manufacturing & Machinery (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020167001849A 2013-06-27 2014-06-26 계측 타겟의 편광 측정 및 대응 타겟 설계 Active KR102252341B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020217014021A KR102333504B1 (ko) 2013-06-27 2014-06-26 계측 타겟의 편광 측정 및 대응 타겟 설계

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361840339P 2013-06-27 2013-06-27
US61/840,339 2013-06-27
US201361916018P 2013-12-13 2013-12-13
US61/916,018 2013-12-13
PCT/US2014/044440 WO2014210381A1 (en) 2013-06-27 2014-06-26 Polarization measurements of metrology targets and corresponding target designs

Related Child Applications (1)

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KR1020217014021A Division KR102333504B1 (ko) 2013-06-27 2014-06-26 계측 타겟의 편광 측정 및 대응 타겟 설계

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KR20160027017A KR20160027017A (ko) 2016-03-09
KR102252341B1 true KR102252341B1 (ko) 2021-05-18

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KR1020217014021A Active KR102333504B1 (ko) 2013-06-27 2014-06-26 계측 타겟의 편광 측정 및 대응 타겟 설계

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US (2) US10458777B2 (enExample)
JP (2) JP6602755B2 (enExample)
KR (2) KR102252341B1 (enExample)
CN (2) CN105408721B (enExample)
TW (1) TWI675998B (enExample)
WO (1) WO2014210381A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10698321B2 (en) * 2012-11-21 2020-06-30 Kla-Tencor Corporation Process compatible segmented targets and design methods
US9851300B1 (en) * 2014-04-04 2017-12-26 Kla-Tencor Corporation Decreasing inaccuracy due to non-periodic effects on scatterometric signals
US10228320B1 (en) 2014-08-08 2019-03-12 KLA—Tencor Corporation Achieving a small pattern placement error in metrology targets
IL322724A (en) 2014-08-29 2025-10-01 Asml Netherlands Bv Metrological method, purpose and basis
WO2017099843A1 (en) 2015-12-08 2017-06-15 Kla-Tencor Corporation Control of amplitude and phase of diffraction orders using polarizing targets and polarized illumination
WO2018063625A1 (en) 2016-09-28 2018-04-05 Kla-Tencor Corporation Direct focusing with image binning in metrology tools
KR102447611B1 (ko) * 2017-06-06 2022-09-26 케이엘에이 코포레이션 레티클 최적화 알고리즘들 및 최적의 타겟 설계
US10409948B1 (en) * 2017-09-29 2019-09-10 Cadence Design Systems, Inc. Topology preserving schematic transformations for RF net editing
US10837919B2 (en) 2017-11-06 2020-11-17 Kla Corporation Single cell scatterometry overlay targets
WO2021144066A1 (en) * 2020-01-16 2021-07-22 Asml Netherlands B.V. Substrate, patterning device and lithographic apparatuses
KR20240142493A (ko) * 2022-01-28 2024-09-30 디2에스, 인코포레이티드 레티클 향상 기술을 위한 방법 및 시스템
KR102767520B1 (ko) * 2022-10-12 2025-02-14 (주)힉스컴퍼니 디지털 홀로그래픽 현미경을 제어하는 방법 및 장치
US12411420B2 (en) 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006518942A (ja) 2003-02-22 2006-08-17 ケーエルエー−テンカー テクノロジィース コーポレイション 散乱計測を用いてオーバレイ誤差を検出する装置および方法
JP2007096292A (ja) * 2005-09-01 2007-04-12 Infineon Technologies Ag 偏光リソグラフィーのためのオーバーレイターゲット
JP2009539109A (ja) * 2006-06-01 2009-11-12 ケーエルエー−テンカー テクノロジィース コーポレイション 次数選択されたオーバレイ測定

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6023338A (en) * 1996-07-12 2000-02-08 Bareket; Noah Overlay alignment measurement of wafers
CN1163737C (zh) * 2000-03-07 2004-08-25 中国科学院长春光学精密机械与物理研究所 一种综合测量液晶器件参数的装置及方法
JP5180419B2 (ja) * 2000-08-30 2013-04-10 ケーエルエー−テンカー・コーポレーション 重ね合わせマーク、重ね合わせマークの設計方法および重ね合わせ測定の方法
US7068833B1 (en) * 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US7050162B2 (en) * 2002-01-16 2006-05-23 Therma-Wave, Inc. Optical metrology tool having improved contrast
JP3695398B2 (ja) * 2002-01-30 2005-09-14 富士ゼロックス株式会社 光学式エンコーダ及びエンコーダ用スケール
JP3967935B2 (ja) * 2002-02-25 2007-08-29 株式会社日立製作所 合わせ精度計測装置及びその方法
US7230703B2 (en) * 2003-07-17 2007-06-12 Tokyo Electron Limited Apparatus and method for measuring overlay by diffraction gratings
SG112969A1 (en) * 2003-12-22 2005-07-28 Asml Netherlands Bv Lithographic apparatus and methods for use thereof
US20050286052A1 (en) * 2004-06-23 2005-12-29 Kevin Huggins Elongated features for improved alignment process integration
KR100684872B1 (ko) * 2004-08-03 2007-02-20 삼성전자주식회사 빛의 편광을 공간적으로 제어하는 광학 시스템 및 이를제작하는 방법
CN1300564C (zh) * 2004-12-28 2007-02-14 天津大学 基于角度测量的原子力显微镜测量方法
DE102005046973B4 (de) * 2005-09-30 2014-01-30 Globalfoundries Inc. Struktur und Verfahren zum gleichzeitigen Bestimmen einer Überlagerungsgenauigkeit und eines Musteranordnungsfehlers
US7324193B2 (en) * 2006-03-30 2008-01-29 Tokyo Electron Limited Measuring a damaged structure formed on a wafer using optical metrology
KR101382020B1 (ko) * 2006-07-14 2014-04-04 가부시키가이샤 니콘 표면 검사 장치
EP2107668A1 (en) * 2007-01-22 2009-10-07 Tokyo University Of Science Educational Foundation Administrative Organization Rotating electric machine
JP4949073B2 (ja) * 2007-02-23 2012-06-06 株式会社 日立ディスプレイズ 液晶表示装置
US8004678B2 (en) * 2007-06-26 2011-08-23 Intel Corporation Wafer level alignment structures using subwavelength grating polarizers
US8161728B2 (en) * 2007-06-28 2012-04-24 United Technologies Corp. Gas turbines with multiple gas flow paths
SG153747A1 (en) * 2007-12-13 2009-07-29 Asml Netherlands Bv Alignment method, alignment system and product with alignment mark
US20090265148A1 (en) * 2008-04-16 2009-10-22 Synopsys, Inc. Modeling a sector-polarized-illumination source in an optical lithography system
JP5007979B2 (ja) * 2008-05-22 2012-08-22 独立行政法人産業技術総合研究所 欠陥を検査する方法及び欠陥検査装置
CN101513366B (zh) * 2009-03-18 2011-03-23 天津大学 基于ps-oct的三维可视化成像方法
NL2004897A (en) * 2009-06-25 2010-12-27 Asml Netherlands Bv Producing a marker pattern and measurement of an exposure-related property of an exposure apparatus.
TWI423166B (zh) * 2009-12-04 2014-01-11 Huper Lab Co Ltd 判斷輸入影像是否為霧化影像之方法、判斷輸入影像的霧級數之方法及霧化影像濾清方法
CN101915556B (zh) * 2010-07-09 2011-11-09 浙江大学 可用于低反射率光学球面面形检测的偏振点衍射干涉系统
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
KR101492205B1 (ko) * 2010-11-12 2015-02-10 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템, 및 디바이스 제조 방법
US8681413B2 (en) * 2011-06-27 2014-03-25 Kla-Tencor Corporation Illumination control
CN102332165B (zh) * 2011-09-15 2013-08-21 中国科学院长春光学精密机械与物理研究所 复杂背景下动目标或弱小目标的实时鲁棒跟踪装置
US9093458B2 (en) * 2012-09-06 2015-07-28 Kla-Tencor Corporation Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US20140240705A1 (en) 2013-02-27 2014-08-28 Kabushiki Kaisha Toshiba Semiconductor device, reticle method for checking position misalignment and method for manufacturing position misalignment checking mark
KR102285895B1 (ko) * 2014-03-31 2021-08-04 케이엘에이 코포레이션 산란측정 계측을 이용한 초점 측정

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006518942A (ja) 2003-02-22 2006-08-17 ケーエルエー−テンカー テクノロジィース コーポレイション 散乱計測を用いてオーバレイ誤差を検出する装置および方法
JP2007096292A (ja) * 2005-09-01 2007-04-12 Infineon Technologies Ag 偏光リソグラフィーのためのオーバーレイターゲット
US20100330469A1 (en) 2005-09-01 2010-12-30 Sajan Marokkey Overlay Target for Polarized Light Lithography
JP2009539109A (ja) * 2006-06-01 2009-11-12 ケーエルエー−テンカー テクノロジィース コーポレイション 次数選択されたオーバレイ測定

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TW201510469A (zh) 2015-03-16
JP2020074387A (ja) 2020-05-14
US10458777B2 (en) 2019-10-29
CN105408721B (zh) 2020-01-10
US20200158492A1 (en) 2020-05-21
JP6875483B2 (ja) 2021-05-26
US20160178351A1 (en) 2016-06-23
CN111043958A (zh) 2020-04-21
TWI675998B (zh) 2019-11-01
KR20210057833A (ko) 2021-05-21
JP6602755B2 (ja) 2019-11-06
KR102333504B1 (ko) 2021-12-01
JP2016524155A (ja) 2016-08-12
CN105408721A (zh) 2016-03-16
US11060845B2 (en) 2021-07-13
KR20160027017A (ko) 2016-03-09
WO2014210381A1 (en) 2014-12-31
CN111043958B (zh) 2021-11-16

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