KR102246964B1 - Plasma Sensor Mounted Wafer And Manufacturing Method Thereof - Google Patents

Abstract

The present invention provides a plasma sensor device for diagnosis of a semiconductor process. The plasma sensor device comprises: a lower case in which a seating groove is formed on one surface thereof; a circuit board on which the plasma sensor and electronic components are mounted and disposed in the seating groove; an upper case having an insertion groove into which the plasma sensor and electronic components are inserted on one surface thereof and joined to the lower case; a lower conductive layer disposed under a circuit board on which the electronic components are mounted; an insulating layer disposed on the circuit board on which the electronic components are mounted; and an upper conductive layer disposed over the insulating layer.

Description

Plasma sensor device for semiconductor process diagnosis and its manufacturing method {Plasma Sensor Mounted Wafer And Manufacturing Method Thereof}

The present invention relates to a plasma sensor device for diagnosing a semiconductor process, and a method of manufacturing the same, and in particular, a plasma sensor device for diagnosing a semiconductor process capable of sensing the density of plasma more precisely and protecting an electronic component from the plasma, and its manufacturing method. It relates to a manufacturing method.

In general, semiconductor manufacturing goes through a number of processes such as optics, deposition and growth, and etching processes.

Semiconductor manufacturing processes require careful monitoring of process conditions and equipment operating conditions in each process. For example, precise monitoring is essential for optimal semiconductor yield while controlling the temperature, gas injection state, pressure state, plasma density, exposure distance, etc. of the chamber or wafer.

When an error occurs in the process conditions related to temperature, plasma, pressure, flow rate, and gas, or when the equipment malfunctions, a number of defects occur, which is fatal to the overall yield.

Meanwhile, in the prior art, the process conditions in the chamber are indirectly measured in semiconductor manufacturing, but research has been developed to directly measure the internal conditions of the chamber or the state of the wafers loaded in the chamber in order to improve the semiconductor yield. One of them is a technology for sensing the temperature of a wafer or the density of plasma used in a semiconductor manufacturing process, and SOW (Sensor On Wafer) has been developed.

SOW (Sensor On Wafer) is a technology in which a plasma sensor is mounted on a test wafer and the plasma density in a semiconductor manufacturing process is directly sensed in a chamber using the plasma sensor. In such SOW (Sensor On Wafer), there is a need for a technology capable of more precisely sensing the plasma density.

The present invention provides a plasma sensor device for diagnosing a semiconductor process capable of accurately sensing the plasma density inside a chamber in which a plasma sensor device for diagnosing a semiconductor process is loaded and protecting electronic components from plasma, and a method of manufacturing the same. It aims to provide.

The technical problems to be achieved in the present invention are not limited to the technical problems mentioned above, and other technical problems that are not mentioned can be clearly understood by those of ordinary skill in the technical field to which the present invention belongs from the following description. There will be.

In order to achieve the above object, the present invention includes a lower case in which a seating groove is formed on one surface, a circuit board in which a plasma sensor and electronic components are mounted and disposed in the seating groove, and a plasma sensor and an electronic component are inserted into one surface. A groove is formed and the upper case is bonded to the lower case, the lower conductive layer disposed under the circuit board on which the electronic components are mounted, the insulating layer disposed on the circuit board on which the electronic components are mounted, and the insulating layer disposed on the insulating layer. It provides a plasma sensor device for diagnosing a semiconductor process including an upper conductive layer.

Here, the upper conductive layer may surround the insulating layer and may be connected to the lower conductive layer.

In addition, the lower conductive layer may be disposed under the circuit board except for the circuit board on which the plasma sensor is mounted, and the upper conductive layer may be disposed on the remaining circuit board except for the circuit board on which the plasma sensor is mounted.

In addition, the plasma sensor device for diagnosing a semiconductor process of the present invention may further include a conductive pattern disposed on the bonding surface of the lower case and the upper case to form an equipotential surface between the lower case and the upper case.

Here, the conductive pattern may be disposed around the plasma sensor, and may be formed of silver dots.

In addition, the plasma sensor device for diagnosing a semiconductor process of the present invention may further include an adhesive layer disposed inside the seating groove and the insertion groove.

In addition, the mounting groove may be formed in a shape corresponding to the circuit board, and the insertion groove may be formed in a shape corresponding to the plasma sensor and the upper conductive layer.

In addition, the present invention provides a step of mounting a plasma sensor and an electronic component on a circuit board, forming a seating groove in a shape corresponding to the circuit board on one side of a lower case, and responding to the shape of the circuit board on which the electronic component is mounted. Forming a lower conductive layer in the mounting groove, mounting the circuit board in the mounting groove, forming an insulating layer on the circuit board on which the electronic component is mounted, and forming an upper conductive layer on the insulating layer And applying an adhesive to the seating groove on which the circuit board is seated and curing it; forming an insertion groove in a shape corresponding to the plasma sensor and electronic components on one surface of the upper case; and applying the adhesive to the insertion groove. And, it provides a method of manufacturing a plasma sensor device for semiconductor process diagnosis comprising the step of bonding the lower case and the upper case so that the plasma sensor and the electronic component are inserted into the insertion groove.

Here, before the step of bonding the lower case and the upper case, forming a conductive pattern on at least one of the lower case and the upper case may be further included.

In addition, the forming of the upper conductive layer may be a step in which the upper conductive layer surrounds the insulating layer and is connected to the lower conductive layer.

In addition, the bonding of the lower case and the upper case may be a step of bonding the lower case and the upper case with the insertion groove facing upward and the mounting groove facing downward.

In addition, the bonding of the lower case and the upper case includes the steps of spreading the adhesive applied to the insertion groove due to the plasma sensor and electronic components to the bonding surface of the lower case and the upper case during the bonding process, and curing the adhesive spread to the bonding surface. It may include the step of.

According to the present invention, it is possible to prevent malfunction of the electronic component by applying a structure to shield the plasma flowing into the electronic component.

According to the present invention, by arranging a conductive pattern on the bonding surfaces of the upper and lower cases constituting the plasma sensor device to form an equipotential surface between the upper and lower cases, the plasma sensor can accurately sense the density and uniformity of the plasma. Has an effect.

The effects obtainable in the present invention are not limited to the above-mentioned effects, and other effects not mentioned can be clearly understood by those of ordinary skill in the art from the following description. will be.

1 is a perspective view of a plasma sensor device for diagnosing a semiconductor process according to an embodiment of the present invention.
2 is a perspective view of a circuit board provided in a plasma sensor device for diagnosing a semiconductor process according to an embodiment of the present invention.
3 is a plan view of a lower case of a plasma sensor device for diagnosing a semiconductor process according to an embodiment of the present invention.
4 is a plan view of an upper case of a plasma sensor device for diagnosing a semiconductor process according to an embodiment of the present invention.
5 is a diagram illustrating a circuit board mounted on the lower case of FIG. 3.
6 is a cross-sectional view of a sensor device for diagnosing a semiconductor process according to an embodiment of the present invention, taken along VI-VI of FIG. 5.
7A to 7L are flowcharts of a method of manufacturing a plasma sensor device for diagnosing a semiconductor process according to an exemplary embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. DETAILED DESCRIPTION OF THE INVENTION The detailed description to be disclosed below together with the accompanying drawings is intended to describe exemplary embodiments of the present invention, and is not intended to represent the only embodiments in which the present invention may be practiced. In the drawings, parts irrelevant to the description may be omitted in order to clearly describe the present invention, and the same reference numerals may be used for the same or similar components throughout the specification.

In an embodiment of the present invention, expressions such as “or” and “at least one” may represent one of words listed together, or a combination of two or more. For example, “A or B” and “at least one of A and B” may include only one of A or B, and may include both A and B.

1 is a perspective view of a plasma sensor device for diagnosing a semiconductor process according to an embodiment of the present invention, and FIG. 2 is a perspective view of a circuit board provided in a plasma sensor device for diagnosing a semiconductor process according to an embodiment of the present invention.

1 and 2, a plasma sensor device for diagnosing a semiconductor process according to an embodiment of the present invention may include a lower case 100, a circuit board 200, and an upper case 300.

The lower case 100 and the upper case 300 may be formed in a disk shape, and may be made of the same material. In particular, the lower case 100 and the upper case 300 are materials having excellent electrical characteristics and may include silicon (Si) doped with high concentration, gallium arsenide (GaAs), and the like.

The circuit board 200 mounts the plasma sensor 241, the electronic component 243, and the battery 245, and is disposed between the lower case 100 and the upper case 300.

Although not shown in the drawings, the circuit board 200 is a printed circuit board (PCB), and wiring is printed so that the plasma sensor 241, the electronic component 243, and the battery 245 are electrically connected.

The circuit board 200 may be provided with an antenna 230 in the form of a spiral loop coil at the center. As such, the antenna 230 may be formed in a printed form on the circuit board 200.

The plasma sensor 241 is provided in plural, and is embedded in a predetermined sensing position of a plasma sensor device for diagnosing a semiconductor process to perform sensing for semiconductor process monitoring at the corresponding position.

The plasma sensor 241 may sense the density and uniformity of plasma in a semiconductor process environment.

The electronic component 243 may include at least one of a control IC (Integrated Circuit) chip, a communication IC chip, a charging IC chip, and a memory.

The control IC chip may control the operation of the plasma sensor 241 using control information. That is, the control IC chip may control the plasma sensor 241 to operate based on a set value included in the control information.

The communication IC chip wirelessly transmits sensing information sensed by the plasma sensor 241 as a configuration for wireless communication with the outside, and wirelessly receives control information for controlling the operation of the plasma sensor 241.

The communication IC chip is connected to the antenna 230 to perform wireless communication with the outside.

The memory may store control information for controlling the operation of the plasma sensor 241 and may store sensing information sensed by the plasma sensor 241. In addition, the memory may store log data recording a process in which a plasma sensor device for diagnosing a semiconductor process is used.

Here, the log data may include information on what conditions and in which processes the plasma sensor device for semiconductor process diagnosis is used.

The battery 245 supplies power for driving components included in the plasma sensor device for diagnosing a semiconductor process, including the plasma sensor 241 and the electronic component 243.

3 is a plan view of a lower case of a plasma sensor device for diagnosing a semiconductor process according to an embodiment of the present invention, and FIG. 4 is a plan view of an upper case of a plasma sensor device for diagnosing a semiconductor process according to an embodiment of the present invention, 5 is a diagram illustrating a circuit board mounted on the lower case of FIG. 3.

3 and 5, in the lower case 100, a seating groove 110 on which the circuit board 200 is mounted is formed in a shape corresponding to the circuit board 200.

4 and 5, the upper case 300 has an insertion groove 320 into which the plasma sensor 241, the electronic component 243, and the battery 245 are inserted. Specifically, the insertion groove 310 has a shape corresponding to the plasma sensor 241 and the upper conductive layer 520 and is formed at a corresponding position.

Here, the seating groove 110 and the insertion groove 310 are preferably formed by a Wet etching technique, but are not limited thereto.

A lower conductive layer 510 may be disposed on the bottom surface of the seating groove 110 in which the electronic component 243 is mounted, and in addition, the circuit board 200 having wiring (not shown) A lower conductive layer 510 may also be disposed on the bottom surface of the seating groove 110 in which) is seated. In contrast, the lower conductive layer 510 is not disposed on the bottom surface of the mounting groove 110 in which the circuit board 200 on which the plasma sensor 241 and the battery 245 are mounted is mounted. A detailed description of this will be described later.

Meanwhile, plasma refers to a gas state in which negative and positive charges are separated at an ultra-high temperature. When the plasma sensor device is exposed to plasma during plasma sensing, charges of opposite polarities are applied to the surfaces and inner surfaces of the lower case 100 and the upper case 300. Is charged. Accordingly, when the plasma sensor 241 senses plasma, the accuracy is deteriorated and the electronic component 243 malfunctions.

In order to solve such a problem, the plasma sensor device for diagnosing a semiconductor process according to an embodiment of the present invention includes a conductive pattern 400 on the bonding surface of the lower case 100 and the upper case 300, An equipotential surface is formed between the case 100 and the upper case 300.

Specifically, referring to FIG. 5, the conductive pattern 400 may be disposed on one surface of the lower case 100 in which the seating groove 110 is not formed. Here, since the above-described problem mainly occurs in the plasma sensor 241 and the electronic component 243, the conductive pattern 400 is preferably disposed around the plasma sensor 241. However, in the case of the electronic component 243, the above-described problem can be solved through the lower conductive layer 510 and the upper conductive layer 520 to be described later, so it is not necessary to provide the conductive pattern 400 around the electronic component 243.

In addition, the conductive pattern 400 may be made of silver dots formed through silver paste, but is not limited thereto and may be made of various conductive materials formed by various forming methods.

On the other hand, since the conductive pattern 400 is a configuration disposed on the bonding surface of the lower case 100 and the upper case 300 to form an equipotential surface between the lower case 100 and the upper case 300, as shown in FIG. Otherwise, it may be disposed on one surface of the upper case 300 in which the insertion groove 310 is not formed.

As described above, in the plasma sensor device for diagnosing a semiconductor process according to an embodiment of the present invention, by disposing the conductive pattern 400 on the bonding surfaces of the upper and lower cases 100 and 300, the upper and lower cases 100 and 300 ) By forming an equipotential surface between), the plasma sensor 241 can accurately sense the density and uniformity of the plasma.

6 is a cross-sectional view of a plasma sensor device for diagnosing a semiconductor process according to an embodiment of the present invention, taken along VI-VI of FIG. 5.

6, a plasma sensor device for diagnosing a semiconductor process according to an embodiment of the present invention includes a lower case 100, a circuit board 200, an upper case 300, a conductive pattern 400, and a lower conductive layer. 510, an insulating layer 120, an upper conductive layer 520, and an adhesive layer 121 to 123 may be included.

The lower case 100 has a seating groove 110 formed on one surface thereof. Further, the circuit board 200 mounts the plasma sensor 241 and the electronic component 243, and is seated in the mounting groove 110 of the lower case 100. Here, the plasma sensor 241 and the electronic component 243 are soldered to the wiring provided on the circuit board 200, and the circuit board 200 is a mounting groove 110 of the lower case 100 using an adhesive. Can be attached to.

The upper case 300 has an insertion groove 310 into which the plasma sensor 241 and the electronic component 243 are inserted.

The lower conductive layer 510 is disposed under the circuit board 200 on which the electronic component 243 is mounted. In addition, the insulating layer 120 is disposed on the circuit board 200 on which the electronic component 243 is mounted, and the upper conductive layer 520 is disposed on the insulating layer 120. Here, the upper conductive layer 520 surrounds the insulating layer 120 and is connected to the lower conductive layer 510.

That is, the lower conductive layer 510 and the upper conductive layer 520 may be formed by applying a conductive paste and curing it, or may be formed of a conductive tape, and a circuit on which the electronic component 243 is mounted. Plasma is shielded by enclosing the substrate 200. Accordingly, malfunction of the electronic component 243 can be prevented. In addition, the insulating layer 120 serves to insulate the electronic component 243 disposed between the lower conductive layer 510 and the upper conductive layer 520.

In addition, the lower conductive layer 510 and the upper conductive layer 520 may be provided below and above the circuit board 200 having wiring (not shown), respectively, and in this case, an object to be insulated (electronic component 243) ), it is not necessary to provide the insulating layer 120.

In other words, the lower conductive layer 510 is disposed under the circuit board 200 except for the circuit board 200 on which the plasma sensor 241 is mounted, and the plasma sensor 241 is mounted on the upper conductive layer 520 It may be disposed on the remaining circuit board 200 except for the circuit board 200.

The conductive pattern 400 is disposed on one of the lower case 100 and the upper case 300. In particular, the conductive pattern 400 is preferably disposed around the plasma sensor 241.

The first adhesive layer 123 is disposed inside the seating groove 110 in which the plasma sensor 241 is seated, and the second adhesive layer 121 is a seating groove in which the lower conductive layer 510 and the upper conductive layer 520 are formed. 110) It is placed inside. In particular, the first adhesive layer 123 is made of heat dissipating silicon and serves to protect the plasma sensor 241 from high temperature heat.

In addition, the first adhesive layer 123 is disposed to surround the plasma sensor 241, and the second adhesive layer 121 is disposed to surround the lower conductive layer 510 and the upper conductive layer 520.

The upper case 300 is bonded to the lower case 100 so that the upper portions of the plasma sensor 241 and the upper conductive layer 520 are inserted into the insertion groove 310.

In this way, when the lower case 100 and the upper case 300 are bonded together, the conductive pattern 400 is disposed on the bonding surface. Accordingly, an equipotential surface is formed between the lower case 100 and the upper case 300 so that the plasma sensor 241 can accurately sense the density and uniformity of the plasma.

In addition, in the circuit board 200 on which the electronic component 243 is mounted, an equipotential surface is formed between the lower case 100 and the upper case 300 due to the lower conductive layer 510 and the upper conductive layer 520. Malfunction of (243) can be prevented.

The second adhesive layer 121 is disposed between the lower case 100 and the upper case 300, in particular, the remaining seating groove 110 in which the plasma sensor 241 is not seated, and the insertion groove 310. Here, the second adhesive layer 121 may be formed of a Si-based material having a hardness of shore A40 or less and an elongation of 30% or more.

When the lower case 100 and the upper case 300 are bonded together, the second adhesive layer 121 is completely filled in the seating groove 110 and the insertion groove 310, so that the lower case 100 and the upper case 300 are In the bonded state, it is characterized in that no pores are included in the seating groove 110 and the insertion groove 310.

In this way, the plasma sensor device for diagnosing a semiconductor process according to an embodiment of the present invention is provided with the second adhesive layer 121 so as not to contain pores in the seating groove 110 and the insertion groove 310, thereby reducing the temperature rise. Accordingly, it is possible to prevent a sensor device warpage phenomenon that occurs due to pore expansion.

In addition, the second adhesive layer 121 is characterized in that the coefficient of thermal expansion is smaller than the lower case 100 and the upper case 300 or the same as the lower case 100 and the upper case 300.

In this way, the plasma sensor device for diagnosing a semiconductor process according to an exemplary embodiment of the present invention has a second adhesive layer 121 having a relatively small coefficient of thermal expansion between the seating groove 110 and the insertion groove 310, thereby preventing temperature rise. Accordingly, warpage of the plasma sensor device caused by expansion of the second adhesive layer 121 may be prevented.

The plasma sensor device for diagnosing a semiconductor process according to an embodiment of the present invention further includes a third adhesive layer 122 disposed in a region where the plasma sensor 241 and the electronic component 243 are mounted, that is, a soldering region. Can be. Here, the soldering area includes an empty space between the circuit board 200 and the plasma sensor 241 and the electronic component 243, and the third adhesive layer 122 is used to underfill the empty space with an adhesive. The plasma sensor 241 and the electronic component (which is formed by filling the circuit board 200) and serves to securely fix the plasma sensor 241 and the electronic component 243 to the circuit board 200, thereby causing the plasma sensor device to warp. 240) can be prevented from peeling.

The third adhesive layer 122 may be formed of a contact epoxy material having a hardness of shore D50 or more and an elongation of 5% or less.

Referring to FIG. 6, after the lower case 100 and the upper case 200 are bonded, the lower part of the plasma sensor 241 and the upper conductive layer 520 is inside the seating groove 110 of the lower case 100. The plasma sensor 241 and the upper conductive layer 520 may be positioned inside the insertion groove 310 of the upper case 300.

On the other hand, unlike the drawings, the size of the insertion groove 310 of the upper case 300 is formed larger than that of the plasma sensor 241 and the upper conductive layer 520, and the depth of the insertion groove 310 is also the lower case 100 ) And the upper case 300 may be formed so that the plasma sensor 241 and the upper conductive layer 520 do not come into contact with the bottom surface of the insertion groove 310.

7A to 7I are flowcharts of a method of manufacturing a plasma sensor device for diagnosing a semiconductor process according to an exemplary embodiment of the present invention.

Hereinafter, a method of manufacturing a plasma sensor device for diagnosing a semiconductor process according to an embodiment of the present invention will be described with reference to FIGS. 1 to 7L, but the same contents as those of the above-described plasma sensor device will be omitted. In addition, each step of the method for manufacturing a plasma sensor device described below will be sequentially described, but the order can be changed as necessary and is not absolute. For example, the lower substrate 100, the upper substrate 300, and the circuit board 200 can be individually manufactured regardless of their order.

First, the plasma sensor 241 and the electronic component 243 are mounted on the circuit board 200. That is, the plasma sensor 241 and the electronic component 243 are soldered to the wiring of the circuit board 200.

Next, as shown in FIG. 7A, a seating groove 110 is formed on one surface of the lower case 100 in a shape corresponding to the circuit board 200. Here, the mounting groove 110 may be formed by a Wet etching technique.

Next, as shown in FIG. 7B, a conductive pattern 400 is formed on one surface of the lower case 100 on which the seating groove 110 is not formed. Unlike the drawings, the conductive pattern 400 may be formed on one surface of the upper case 300 in which the insertion groove is not formed. That is, the conductive pattern 400 may be formed on one of the lower case 100 and the upper case 300.

Hereinafter, a case where the conductive pattern 400 is disposed on one surface of the lower case 100 will be described as an example.

Here, the conductive pattern 400 may be disposed around the plasma sensor 241.

In addition, the conductive pattern 400 may be made of silver dots formed through silver paste, but is not limited thereto and may be made of various conductive materials formed by various forming methods.

Next, as shown in FIG. 7C, a lower conductive layer 510 is formed in the seating groove 110 corresponding to the shape of the circuit board 200 on which the electronic component 243 is mounted. In this case, the lower conductive layer 510 may also be formed in the mounting groove 110 corresponding to the shape of the circuit board 200 on which the wiring (not shown) is formed.

Next, as shown in FIG. 7D, the circuit board 200 is mounted in the mounting groove 110 of the lower case 100. Here, the circuit board 200 may be attached to the bottom surface of the mounting groove 110 by an adhesive.

Next, as shown in FIG. 7E, the area where the plasma sensor 241 and the electronic component 243 are mounted before applying the first and second adhesives 123a and 121a to the mounting groove 110, that is, a soldering area The third adhesive 122a is underfilled and cured to form a third adhesive layer 122.

Here, the soldering area includes an empty space between the circuit board 200 and the plasma sensor 241 and the electronic component 243, and the third adhesive 122a is filled in this empty space by an underfill process. Hardens. Accordingly, the plasma sensor 241 and the electronic component 243 can be firmly fixed to the circuit board 200, and the plasma sensor 241 and the electronic component 240 are peeled off due to the bending phenomenon of the plasma sensor device. Can be prevented.

Next, as shown in FIG. 7F, an insulating layer 120 is formed on the circuit board 200 on which the electronic component 243 is mounted. In this case, the insulating layer 120 is not formed at the edge of the mounting groove 110 to connect the lower conductive layer 510 and the upper conductive layer 520 to be described later.

Next, as shown in FIG. 7G, an upper conductive layer 520 is formed on the insulating layer 120. In this case, the upper conductive layer 520 surrounds the insulating layer 120 and is formed to be connected to the lower conductive layer 510.

Next, as shown in FIG. 7H, the adhesive 121a is applied to the seating groove 110 in which the plasma sensor 241 is seated and cured. Accordingly, the first adhesive layer 123 is formed in the seating groove 110 in which the plasma sensor 241 is seated. In this case, the first adhesive layer 123 is made of heat dissipating silicon and serves to protect the plasma sensor 241 from high temperature heat.

Next, as shown in FIG. 7I, an insertion groove 310 is formed on one surface of the upper case 300 in a shape corresponding to the plasma sensor 241 and the upper conductive layer 520. Here, the insertion groove 310 may be formed by a Wet etching technique.

Next, as shown in FIGS. 7J to 7L, the second adhesive 121a is applied to the insertion groove 310 formed in the upper case 300, and the insertion groove 310 before the second adhesive 121a is cured. The lower case 100 and the upper case 300 are bonded to each other so that the plasma sensor 241 and the upper conductive layer 500 are inserted therein.

Here, as shown in FIG. 7K, the insertion groove 310 of the upper case 300 faces upward, and the seating groove 110 of the lower case 100 faces downward, so that the lower case 100 And the upper case 300 is bonded. This is to prevent this because when bonding is performed with the insertion groove 310 of the upper case 300 facing downward, the second adhesive 121a, which has not yet been cured, flows down by gravity during the bonding process. .

In the above-described bonding process, the second adhesive 121a applied to the insertion groove 310 due to the plasma sensor 241 and the upper conductive layer 520 spreads to the bonding surface of the lower case 100 and the upper case 300. When the second adhesive 121a spread to the bonding surface is cured, the lower case 100 and the upper case 300 are bonded, and the second adhesive layer 121 bonds the plasma sensor 241 and the upper conductive layer 520 to each other. It is formed in the form of wrapping.

As described above, in a method of manufacturing a plasma sensor device for diagnosing a semiconductor process according to an embodiment of the present invention, by forming the conductive pattern 400 on the bonding surfaces of the upper and lower cases 100 and 300, By forming an equipotential surface between 100 and 300, the plasma sensor 241 can accurately sense the density and uniformity of the plasma.

In addition, the lower conductive layer 510 and the upper conductive layer 520 shield plasma, thereby preventing malfunction of the electronic component 243.

In addition, an equipotential surface is formed between the lower case 100 and the upper case 300 due to the lower conductive layer 510 and the upper conductive layer 520, thereby preventing malfunction of the electronic component 243.

Although a preferred embodiment of the present invention has been described so far, a person of ordinary skill in the art to which the present invention pertains may be implemented in a modified form within the scope not departing from the essential characteristics of the present invention.

Embodiments of the present invention disclosed in the present specification and drawings are merely provided with specific examples to easily explain the technical content of the present invention and to aid understanding of the present invention, and are not intended to limit the scope of the present invention. Therefore, the scope of the present invention should be construed that all changes or modified forms derived based on the technical idea of the present invention in addition to the embodiments disclosed herein are included in the scope of the present invention.

100: lower case
120: insulating layer
200: circuit board
241: plasma sensor
243: electronic components
300: upper case
400: conductive pattern
510: lower conductive layer
520: upper conductive layer

Claims (13)

A lower case in which a seating groove is formed on one side;
A circuit board on which a plasma sensor and an electronic component are mounted and disposed in the mounting groove;
An upper case having an insertion groove into which the plasma sensor and the electronic component are inserted on one surface and bonded to the lower case;
A lower conductive layer disposed under the circuit board on which the electronic component is mounted;
An insulating layer disposed on the circuit board on which the electronic component is mounted;
An upper conductive layer disposed on the insulating layer; And
A conductive pattern disposed on the bonding surface of the lower case and the upper case, and disposed in a dot shape around the plasma sensor
Plasma sensor device for diagnosing a semiconductor process comprising a.
The method of claim 1,
The upper conductive layer is
Surrounding the insulating layer and connected to the lower conductive layer
Plasma sensor device for semiconductor process diagnosis.
The method of claim 1,
The lower conductive layer is
It is disposed under the other circuit board except for the circuit board on which the plasma sensor is mounted,
The upper conductive layer is
The plasma sensor is disposed on the rest of the circuit board except for the mounted circuit board.
Plasma sensor device for semiconductor process diagnosis.
delete delete The method of claim 1,
The conductive pattern is a silver dot
Plasma sensor device for semiconductor process diagnosis.
The method of claim 1,
Adhesive layer disposed inside the seating groove and the insertion groove
Plasma sensor device for semiconductor process diagnosis further comprising a.
The method of claim 1,
The seating groove is
Formed in a shape corresponding to the circuit board,
The insertion groove is
Formed in a shape corresponding to the plasma sensor and the upper conductive layer
Plasma sensor device for semiconductor process diagnosis.
Mounting a plasma sensor and an electronic component on a circuit board;
Forming a seating groove in a shape corresponding to the circuit board on one surface of the lower case;
Forming a lower conductive layer in the seating groove corresponding to the shape of the circuit board on which the electronic component is mounted;
Seating the circuit board in the seating groove;
Forming an insulating layer on the circuit board on which the electronic component is mounted;
Forming an upper conductive layer on the insulating layer;
Applying an adhesive to the seating groove in which the circuit board is seated and curing it;
Forming an insertion groove in a shape corresponding to the plasma sensor and the electronic component on one surface of the upper case;
Forming a conductive pattern on at least one of the lower case and the upper case; And
Applying the adhesive to the insertion groove, and bonding the lower case and the upper case so that the plasma sensor and the electronic component are inserted into the insertion groove,
The step of forming the conductive pattern,
The step of forming the conductive pattern in a dot shape around the plasma sensor
A method of manufacturing a plasma sensor device for diagnosing semiconductor processes.
delete The method of claim 9,
Forming the upper conductive layer
In which the upper conductive layer surrounds the insulating layer and is connected to the lower conductive layer.
A method of manufacturing a plasma sensor device for diagnosing semiconductor processes.
The method of claim 9,
The step of bonding the lower case and the upper case
The step of bonding the lower case and the upper case so that the insertion groove faces upward and the seating groove faces downward.
A method of manufacturing a plasma sensor device for diagnosing semiconductor processes.
The method of claim 9,
The step of bonding the lower case and the upper case
Spreading the adhesive applied to the insertion groove due to the plasma sensor and the electronic component to the bonding surfaces of the lower case and the upper case during the bonding process; And
Including the step of curing the adhesive spread to the bonding surface
A method of manufacturing a plasma sensor device for diagnosing semiconductor processes.

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