KR102230458B9 - 다이아몬드 기판 제조 방법 - Google Patents

다이아몬드 기판 제조 방법

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Publication number
KR102230458B9
KR102230458B9 KR1020190088718A KR20190088718A KR102230458B9 KR 102230458 B9 KR102230458 B9 KR 102230458B9 KR 1020190088718 A KR1020190088718 A KR 1020190088718A KR 20190088718 A KR20190088718 A KR 20190088718A KR 102230458 B9 KR102230458 B9 KR 102230458B9
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KR
South Korea
Prior art keywords
single crystal
crystal diamond
diamond substrate
manufacturing single
manufacturing
Prior art date
Application number
KR1020190088718A
Other languages
English (en)
Other versions
KR102230458B1 (ko
KR20200066146A (ko
Inventor
남옥현
유근호
최의호
신희진
Original Assignee
한국산업기술대학교산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국산업기술대학교산학협력단 filed Critical 한국산업기술대학교산학협력단
Priority to EP19891111.7A priority Critical patent/EP3890000B1/en
Priority to JP2021529457A priority patent/JP7204917B2/ja
Priority to US17/297,635 priority patent/US11699587B2/en
Priority to PCT/KR2019/016511 priority patent/WO2020111790A1/ko
Publication of KR20200066146A publication Critical patent/KR20200066146A/ko
Application granted granted Critical
Publication of KR102230458B1 publication Critical patent/KR102230458B1/ko
Publication of KR102230458B9 publication Critical patent/KR102230458B9/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02612—Formation types
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    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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    • H01L21/02518—Deposited layers
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    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
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    • H01L21/02367—Substrates
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    • H01L21/02376—Carbon, e.g. diamond-like carbon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/26—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
KR1020190088718A 2018-11-30 2019-07-23 다이아몬드 기판 제조 방법 KR102230458B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP19891111.7A EP3890000B1 (en) 2018-11-30 2019-11-27 Method for manufacturing diamond substrate
JP2021529457A JP7204917B2 (ja) 2018-11-30 2019-11-27 ダイヤモンド基板の製造方法
US17/297,635 US11699587B2 (en) 2018-11-30 2019-11-27 Method for manufacturing diamond substrate
PCT/KR2019/016511 WO2020111790A1 (ko) 2018-11-30 2019-11-27 다이아몬드 기판 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20180152579 2018-11-30
KR1020180152579 2018-11-30

Publications (3)

Publication Number Publication Date
KR20200066146A KR20200066146A (ko) 2020-06-09
KR102230458B1 KR102230458B1 (ko) 2021-03-23
KR102230458B9 true KR102230458B9 (ko) 2024-01-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190088718A KR102230458B1 (ko) 2018-11-30 2019-07-23 다이아몬드 기판 제조 방법

Country Status (4)

Country Link
US (1) US11699587B2 (ko)
EP (1) EP3890000B1 (ko)
JP (1) JP7204917B2 (ko)
KR (1) KR102230458B1 (ko)

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Publication number Priority date Publication date Assignee Title
US20220216368A1 (en) * 2021-01-04 2022-07-07 Samsung Electronics Co., Ltd. Semiconductor structure and method of manufacturing the same
CN114232089B (zh) * 2021-11-10 2023-08-04 山东大学 金刚石在碳化硅衬底上成核密度周期性调制方法
CN114182342B (zh) * 2021-12-13 2023-12-01 安徽光智科技有限公司 单晶金刚石生长用沉积基底及单晶金刚石的制造方法
KR102703821B1 (ko) * 2023-12-04 2024-09-05 웨이브로드 주식회사 자가 분리를 이용한 그룹3족 질화물 반도체 템플릿의 제조 방법

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US5290392A (en) * 1992-06-05 1994-03-01 Trw Inc. Single crystal diamond wafer fabrication
US5443032A (en) * 1992-06-08 1995-08-22 Air Products And Chemicals, Inc. Method for the manufacture of large single crystals
US5614019A (en) * 1992-06-08 1997-03-25 Air Products And Chemicals, Inc. Method for the growth of industrial crystals
JP3287131B2 (ja) 1994-09-20 2002-05-27 株式会社日立製作所 吸収式冷温水機
DE19514542C2 (de) 1995-04-20 1997-07-31 Daimler Benz Ag Komposit-Struktur und Verfahren zu deren Herstellung
KR970042919A (ko) 1995-12-28 1997-07-26 전성원 충전접착용 발포 매스틱 실러
JP4082769B2 (ja) * 1998-01-16 2008-04-30 株式会社神戸製鋼所 ダイヤモンド膜の形成方法
KR100619441B1 (ko) 2004-06-30 2006-09-08 서울옵토디바이스주식회사 기판제거가 용이한 질화갈륨 성장 방법
KR100763467B1 (ko) 2007-04-18 2007-10-04 주식회사 시스넥스 단결정 질화갈륨 기판의 제조방법
KR101053116B1 (ko) * 2011-02-28 2011-08-01 박건 패턴화된 격자 완충층을 이용한 질화물계 발광소자 제조 방법
JP5346052B2 (ja) 2011-03-09 2013-11-20 日本電信電話株式会社 ダイヤモンド薄膜及びその製造方法
KR102232265B1 (ko) * 2014-07-14 2021-03-25 주식회사 헥사솔루션 기판 구조, 그 형성방법, 및 이를 이용한 질화물 반도체 제조방법
WO2016024564A1 (ja) 2014-08-11 2016-02-18 住友電気工業株式会社 ダイヤモンド複合体、基板、ダイヤモンド、ダイヤモンドを備える工具およびダイヤモンドの製造方法
JP7017299B2 (ja) * 2015-07-30 2022-02-08 信越化学工業株式会社 ダイヤモンド電子素子及びダイヤモンド電子素子の製造方法
JP6699015B2 (ja) * 2016-02-29 2020-05-27 信越化学工業株式会社 ダイヤモンド基板の製造方法

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