KR102218740B9 - 트랜스포즈가 가능한 가중치 셀 및 이의 어레이 - Google Patents

트랜스포즈가 가능한 가중치 셀 및 이의 어레이

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Publication number
KR102218740B9
KR102218740B9 KR20180058581A KR20180058581A KR102218740B9 KR 102218740 B9 KR102218740 B9 KR 102218740B9 KR 20180058581 A KR20180058581 A KR 20180058581A KR 20180058581 A KR20180058581 A KR 20180058581A KR 102218740 B9 KR102218740 B9 KR 102218740B9
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KR
South Korea
Prior art keywords
transposable
array
synaptic weight
weight cell
cell
Prior art date
Application number
KR20180058581A
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English (en)
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KR20190133532A (ko
KR102218740B1 (ko
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Publication date
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Priority to KR1020180058581A priority Critical patent/KR102218740B1/ko
Publication of KR20190133532A publication Critical patent/KR20190133532A/ko
Application granted granted Critical
Publication of KR102218740B1 publication Critical patent/KR102218740B1/ko
Publication of KR102218740B9 publication Critical patent/KR102218740B9/ko

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Biophysics (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Data Mining & Analysis (AREA)
  • Computational Linguistics (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Artificial Intelligence (AREA)
  • Neurology (AREA)
  • Semiconductor Memories (AREA)
KR1020180058581A 2018-05-23 2018-05-23 트랜스포즈가 가능한 가중치 셀 및 이의 어레이 KR102218740B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020180058581A KR102218740B1 (ko) 2018-05-23 2018-05-23 트랜스포즈가 가능한 가중치 셀 및 이의 어레이

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180058581A KR102218740B1 (ko) 2018-05-23 2018-05-23 트랜스포즈가 가능한 가중치 셀 및 이의 어레이

Publications (3)

Publication Number Publication Date
KR20190133532A KR20190133532A (ko) 2019-12-03
KR102218740B1 KR102218740B1 (ko) 2021-02-23
KR102218740B9 true KR102218740B9 (ko) 2021-09-17

Family

ID=68837912

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180058581A KR102218740B1 (ko) 2018-05-23 2018-05-23 트랜스포즈가 가능한 가중치 셀 및 이의 어레이

Country Status (1)

Country Link
KR (1) KR102218740B1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102584868B1 (ko) * 2020-01-06 2023-10-04 서울대학교산학협력단 온칩 학습이 가능한 뉴로모픽 아키텍쳐
KR102503403B1 (ko) * 2020-01-09 2023-02-23 포항공과대학교 산학협력단 컨덕턴스와 펄스 폭으로 가중치를 조절할 수 있는 준 벡터 행렬 곱셈 뉴럴 네트워크
KR102404388B1 (ko) * 2020-03-09 2022-06-02 (주)그린파워 트랜스포즈 매트릭스 곱셈이 가능한 매트릭스 곱셈기 및 곱셈방법
KR102495632B1 (ko) 2020-11-26 2023-02-06 포항공과대학교 산학협력단 아날로그 신호를 확률 신호로 변환하는 역치 변환 소자 기반의 아날로그-확률 변환 장치
KR102574156B1 (ko) * 2021-07-06 2023-09-01 고려대학교 산학협력단 역전파와 음수 가중치 설정이 가능한 뉴로모픽 회로
KR20240061917A (ko) 2022-11-01 2024-05-08 부산대학교 산학협력단 박막 트랜지스터 기반 snn의 회로적 구조

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120119533A (ko) * 2011-04-21 2012-10-31 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 프로그램 방법
KR102060488B1 (ko) * 2012-12-27 2019-12-30 삼성전자주식회사 불휘발성 랜덤 액세스 메모리 장치 및 그것의 데이터 읽기 방법
KR102074942B1 (ko) * 2013-07-29 2020-02-10 삼성전자 주식회사 비휘발성 메모리 트랜지스터 및 이를 포함하는 소자
KR102477093B1 (ko) * 2015-10-13 2022-12-13 삼성전자주식회사 푸리에 변환을 수행하는 방법 및 장치
US9966137B2 (en) * 2016-08-17 2018-05-08 Samsung Electronics Co., Ltd. Low power analog or multi-level memory for neuromorphic computing

Also Published As

Publication number Publication date
KR20190133532A (ko) 2019-12-03
KR102218740B1 (ko) 2021-02-23

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